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BUL312FH: High Voltage Fast-Switching NPN Power Transistor

The document describes a high voltage fast-switching NPN power transistor. It provides details on its applications, descriptions, maximum ratings, electrical characteristics, mechanical data, and more.

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Angel Simo Morales
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58 views6 pages

BUL312FH: High Voltage Fast-Switching NPN Power Transistor

The document describes a high voltage fast-switching NPN power transistor. It provides details on its applications, descriptions, maximum ratings, electrical characteristics, mechanical data, and more.

Uploaded by

Angel Simo Morales
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 6

BUL312FH

HIGH VOLTAGE FAST-SWITCHING


NPN POWER TRANSISTOR

Ordering Code Marking Shipment


BUL312FH BUL312FH Tube

„ HIGH VOLTAGE CAPABILITY


„ LOW SPREAD OF DYNAMIC PARAMETERS
„ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
„ VERY HIGH SWITCHING SPEED
„ FULLY CHARACTERIZED AT 125 °C
„ LARGE R.B.S.O.A.
„ FULLY INSULATED PACKAGE (U.L. TO-220FH
COMPLIANT) FOR EASY MOUNTING

APPLICATIONS:
„ HORIZONTAL DEFLECTION FOR COLOR TV
„ SWITCH MODE POWER SUPPLIES
„ ELECTRONIC BALLASTS FOR
INTERNAL SCHEMATIC DIAGRAM
FLUORESCENT LIGHTING

DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching
speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide R.B.S.O.A.

ABSOLUTE MAXIMUM RATINGS


Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1150 V
VCEO Collector-Emitter Voltage (IB = 0) 500 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 5 A
ICM Collector Peak Current (tp < 5 ms) 10 A
IB Base Current 3 A
IBM Base Peak Current (tp < 5 ms) 4 A
Ptot Total Dissipation at Tc = 25 °C 36 W
Visol Insulation Withstand Voltage (RMS) from All Three 2500 V
Leads to External Heatsink
Tstg Storage Temperature –65 to 150 °C
Tj Max. Operating Junction Temperature 150 °C

August 2002 1/6


BUL312FH

THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 3.47 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)


Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off VCE = 1150 V 1 mA
Current (VBE = 0) VCE = 1150 V Tj = 125 °C 2 mA
ICEO Collector Cut-off VCE = 500 V 250 µA
Current (IB = 0)
VEBO Emitter-Base Voltage IE = 10 mA 9 V
(IC = 0)
VCEO(sus)* Collector-Emitter IC = 100 mA 500 V
Sustaining Voltage
(IB = 0)
VCE(sat)* Collector-Emitter IC = 1 A IB = 200 mA 0.5 V
Saturation Voltage IC = 2 A IB = 400 mA 0.7 V
IC = 3 A IB = 600 mA 1.1 V
VBE(sat)* Base-Emitter IC = 1 A IB = 200 mA 1 V
Saturation Voltage IC = 2 A IB = 400 mA 1.1 V
IC = 3 A IB = 600 mA 1.2 V
hFE* DC Current Gain IC = 10 mA VCE = 5 V 8
IC = 3 A VCE = 2.5 V 8 16
INDUCTIVE LOAD IC = 2 A Vclamp = 250 V
ts Storage Time IB1 = 400 mA VBE(off) = -5 V 1.2 1.9 µs
tf Fall Time L = 200 µH RBB = 0 80 160 ns
(See Figure 1)
INDUCTIVE LOAD IC = 2 A Vclamp = 250 V
ts Storage Time IB1 = 400 mA VBE(off) = -5 V 1.8 µs
tf Fall Time L = 200 µH RBB = 0 150 ns
Tj = 125 °C (See Figure 1)
* Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %.

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BUL312FH

Safe Operating Area Derating Curve

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

DC Current Gain DC Current Gain

3/6
BUL312FH

Inductive Load Storage Time Inductive Load Fall Time

Reverse Biased Safe Operating Area

Figure 1: Inductive Load Switching Test Circuit

1) Fast Electronic Switch


2) Non-Inductive Resistor
3) Fast Recovery Rectifier

4/6
BUL312FH

TO-220FH (Fully plastic High voltage) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.3 1.8 0.051 0.070
F2 1.3 1.8 0.051 0.070
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L5 3.4 0.134
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
L8 14.5 15 0.570 0.590
L9 2.4 0.094

P011W

5/6
BUL312FH

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics

© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved


STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com

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