STGB15H60DF, STGF15H60DF, STGP15H60DF

Datasheet

Trench gate field-stop IGBT, H series 600 V, 14 A high speed

TAB Features
• High speed switching
3
1
D2 PAK
• Tight parameters distribution
3
1
2
• Safe paralleling
TO-220FP
TAB
• Low thermal resistance
• Short-circuit rated
1
2
3
• Ultrafast soft recovery antiparallel diode
TO-220

C(2, TAB) Applications

• Motor control
• UPS, PFC
G(1)

Description
These devices are IGBTs developed using an advanced proprietary trench gate field-
E(3)
NG1E3C2T stop structure. These devices are part of the H series of IGBTs, which represents an
optimum compromise between conduction and switching losses to maximize the
efficiency of high switching frequency converters. Furthermore, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.

Product status link

STGB15H60DF
STGF15H60DF
STGP15H60DF

DS9881 - Rev 3 - April 2019 www.st.com

For further information contact your local STMicroelectronics sales office.
 STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Value
Symbol Parameter Unit
D2PAK, TO-220 TO-220FP

VCES Collector-emitter voltage (VGE = 0 V) 600 V

Continuous collector current at TC = 25 °C 30 30 (1)

IC A
Continuous collector current at TC = 100 °C 15 15 (1)

ICP (2) Pulsed collector current 60 60 A

VGE Gate-emitter voltage ±20 V

Continuous forward current TC = 25 °C 30 30 (1)

IF A
Continuous forward current at TC = 100 °C 15 15 (1)

IFP (2) Pulsed forward current 60 60 A

Insulation withstand voltage (RMS) from all three leads to

VISO external heat sink 2500 V
(t = 1 s; Tc = 25 °C)

PTOT Total power dissipation at TC = 25 °C 115 30 W

TSTG Storage temperature range -55 to 150

°C
TJ Operating junction temperature range -55 to 175

1. Limited by maximum junction temperature.

2. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

Value
Symbol Parameter Unit
D2PAK, TO-220 TO-220FP

RthJC Thermal resistance junction-case IGBT 1.3 5 °C/W

RthJC Thermal resistance junction-case diode 2.78 6.25 °C/W

RthJA Thermal resistance junction-ambient 62.5 62.5 °C/W

DS9881 - Rev 3 page 2/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 2 mA 600 V
voltage
VGE = 15 V, IC= 15 A 1.6 2.0

VGE = 15 V, IC = 15 A
Collector-emitter saturation 1.7
VCE(sat) TJ = 125 °C V
voltage
VGE = 15 V, IC = 15 A
1.8
TJ = 175 °C

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5.0 6.0 7.0 V

VCE = 600 V
ICES Collector cut-off current 25 μA
VGE = 0 V

VGE = ±20 V
IGES Gate-emitter leakage current ±250 nA
VCE = 0 V

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance 1952

VCE = 25 V, f = 1 MHz,
Coes Output capacitance - 78 - pF
VGE = 0 V
Cres Reverse transfer capacitance 45

Qg Total gate charge 81

VCC = 480 V, IC = 15 A,
Qge Gate-emitter charge VGE = 0 to 15 V (see Figure 33. Gate - 8 - nC

Qgc Gate-collector charge charge test circuit) 42

Table 5. Switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCE = 400 V, IC = 15 A, 24.5

ns
tr Current rise time RG = 10 Ω, VGE = 15 V (see 8.2
Figure 32. Test circuit for inductive load
(di/dt)on Turn-on current slope switching and Figure 34. Switching 1470 A/μs
waveform)
-
td(on) Turn-on delay time VCE = 400 V, IC = 15 A, 25
ns
tr Current rise time RG = 10 Ω, VGE = 15 V 9
TJ = 175 °C (see Figure 32. Test circuit
(di/dt)on Turn-on current slope for inductive load switching and 1370 A/μs
Figure 34. Switching waveform)

DS9881 - Rev 3 page 3/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

tr(Voff) Off voltage rise time VCE = 400 V, IC = 15 A, 18

td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V (see 118

Figure 32. Test circuit for inductive load
tf Current fall time switching and Figure 34. Switching 69
waveform)
- ns
tr(Voff) Off voltage rise time VCE = 400 V, IC = 15 A, 27

td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V 124

TJ = 175 °C (see Figure 32. Test circuit
tf Current fall time for inductive load switching and 101
Figure 34. Switching waveform)
VCC ≤ 360 V, VGE = 15 V,
tsc Short-circuit withstand time 3 5 - μs
RG = 10 Ω

Table 6. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon (1) VCE = 400 V, IC = 15 A,

Turn-on switching energy 136

Eoff (2) Turn-off switching energy RG = 10 Ω, VGE = 15 V 207

(see Figure 32. Test circuit for inductive
Ets Total switching energy load switching) 343

Eon (1)
Turn-on switching energy VCE = 400 V, IC = 15 A, - 224 - μJ

Eoff (2) Turn-off switching energy RG = 10 Ω, VGE = 15 V 329

TJ = 175 °C
Ets Total switching energy (see Figure 32. Test circuit for inductive 553
load switching)

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 7. Collector-emitter diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

IF = 15 A 1.8 2.2
VF Forward on-voltage - V
IF = 15 A, TJ = 175 °C 1.3

trr Reverse recovery time Vr = 60 V; IF = 15 A; 103 ns

Qrr Reverse recovery charge diF/dt = 100 A / μs 128 nC

(see Figure 35. Diode reverse recovery
Irrm Reverse recovery current waveform) 2.5 A

trr Reverse recovery time Vr = 60 V; IF = 15 A; - 182 ns

Qrr Reverse recovery charge diF/dt = 100 A / μs 437 nC

TJ = 175 °C
Irrm Reverse recovery current (see Figure 35. Diode reverse recovery 4.8 A
waveform)

DS9881 - Rev 3 page 4/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature for Figure 2. Collector current vs case temperature for D2PAK
D2PAK and TO-220 and TO-220
GIPD041020131126FSR GIPD011020131132FSR
Ptot IC
(W) (A)
120 30

100 25

80 20

60 15

40 10

VGE ≥ 15V, T J ≤ 175 °C

20 5

0 0
0 25 50 75 100 125 150 175 TC(°C) 0 25 50 75 100 125 150 175 TC(°C)

Figure 3. Power dissipation vs case temperature for Figure 4. Collector current vs case temperature for
TO-220FP TO-220FP
GIPD151020131527SA GIPD151020131600SA
Ptot IC
(W) (A)

16
30

12
20
8

10
4
VGE ≥ 15V, T J ≤ 175 °C

0 0
0 50 100 150 TC(°C) 0 50 100 150 TC(°C)

Figure 5. Output characteristics (TJ = 25°C) Figure 6. Output characteristics (TJ = 175°C)
GIPD041020131136FSR GIPD041020131142FSR
IC IC
(A) 11V (A)
VGE=15V VGE=15 V 11V
40 40
9V 9V
35 35

30 30
25 25

20 20

15 15

10 10

5 5
7V 7V
0 0
0 1 2 3 4 VCE(V) 0 1 2 3 4 VCE (V)

DS9881 - Rev 3 page 5/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics (curves)

Figure 7. VCE(sat) vs junction temperature Figure 8. VCE(sat) vs collector current

GIPD041020131148FSR GIPD041020131152FSR
VCE(sat) VCE(sat)
(V) (V)
2.4 TJ= 175°C
VGE= 15V 2.4 VGE= 15V
IC= 30A
2.2
2.2
2.0 TJ= 25°C
2.0
IC= 15A
1.8 1.8

1.6 1.6 TJ= -40°C

IC= 10A
1.4 1.4

1.2 1.2
-50 0 50 100 150 TJ(°C) 0 5 10 15 20 25 30 IC(A)

Figure 9. Collector current vs switching frequency for Figure 10. Collector current vs switching frequency for
D2PAK and TO-220 TO-220FP
GIPD161020130955SA GIPD161020130958SA
Ic [A] Ic [A]

40 Tc=80°C 20
Tc=80°C

Tc=100 °C
30 15 Tc=100 °C

20 10

10 Rectangular current shape, 5 rectangular current shape,

(duty cycle = 0.5, VCC = 400 V, RG = 4,7 Ω (duty cycle=0.5, VCC = 400V, RG=4.7 Ω,
VGE = 0/15 V, TJ = 175 °C
VGE = 0/15 V, TJ =175°C)

0 0
1 10 f [kHz] 1 10 f [kHz]

Figure 11. Forward bias safe operating area for D2PAK

Figure 12. Forward bias safe operating area for TO-220FP
and TO-220
GIPD211020131350FSR
GIPD211020131342FSR IC
IC (A)
(A)

10 10 µs
10
10 µs
100 µs
100 µs
1 1 ms
1 1 ms Single pulse
Single pulse Tc= 25°C, TJ<= 175°C
Tc= 25°C, TJ<= 175°C VGE= 15V
° °
VGE= 15V

0.1
0.1 1 10 100 VCE(V)
1 10 100 VCE(V)

DS9881 - Rev 3 page 6/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics (curves)

Figure 13. Transfer characteristics Figure 14. Diode VF vs forward current

GIPD041020131357FSR GIPD041020131406FSR
IC VF (V)
(A) -40°C 2.5 TJ= -40°C
40 VCE=5V

35
2.1
30
TJ= 25°C
25 TJ=175°C
20 1.7

15
10 1.3

5 TJ= 175°C
25°C
0 0.9
6 7 8 9 10 11 VGE(V) 5 9 13 17 21 25 IF(A)

Figure 15. Normalized VGE(th) vs junction temperature Figure 16. Normalized V(BR)CES vs junction temperature
GIPD041020131457FSR GIPD041020131502FSR
VGE(th) V(BR)CES
(norm) (norm)
1.1 IC= 1 mA
VCE= VGE 1.1
IC= 2mA
1.0

0.9

1.0
0.8

0.7

0.6 0.9
-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C)

Figure 17. Capacitance variation Figure 18. Gate charge vs gate-emitter voltage
GIPD041020131506FSR GIPD041020131514FSR
C VGE
(pF) (V)
10000
16 IC= 15A
IGE= 1mA
Ciss VCC= 480V
1000 12

100
Coes 4
Cres

10 0
0.1 1 10 VCE(V) 0 20 40 60 80 Qg (nC)

DS9881 - Rev 3 page 7/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics (curves)

Figure 19. Switching evergy vs collector current Figure 20. Switching energy vs gate resistance
GIPD041020131521FSR GIPD041020131529FSR
E E
(µJ) (µJ)
VCC = 400V, V GE = 15V,
RG = 10Ω, TJ = 175°C 450 VCC = 400 V, V GE = 15 V,
600
IC = 15 A, TJ = 175 °C
550 400
500
450 350 EOFF
EOFF
400
350 300
EON
300
250
250
200 EON
200
150
100 150
50
0 100
0 5 10 15 20 25 30 IC(A) 2 12 22 32 42 RG(Ω)

Figure 21. Switching energy vs temperature Figure 22. Switching energy vs collector-emitter voltage
GIPD041020131535FSR GIPD041020131542FSR
E E
(µJ) (µJ)
VCC= 400V, V GE= 15V, TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 15A 370 RG= 10Ω, IC= 15A
310 320
EOFF
EOFF
270

210 220 EON

EON
170

110 120

70

10 20
-50 0 50 100 150 TJ(°C) 150 250 350 450 VCE(V)

Figure 23. Short-circuit time and current vs VGE Figure 24. Switching times vs collector current
GIPD161020131059SA GIPD041020131549FSR
tsc (µs) ISC(A) t
VCC= 360V, RG= 10W
(ns)
TJ= 175 °C, VGE= 15 V,
ISC RG= 10 Ω, VCC= 400 V
14 300
t doff
tSC
250 100
12
tf
tr
10 200
t don
8 150 10

6 100

4 50 1
10 11 12 13 14 VGE(V) 0 10 20 30 IC(A)

DS9881 - Rev 3 page 8/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics (curves)

Figure 25. Switching times vs gate resistance Figure 26. Reverse recovery current vs diode current
slope
GIPD041020131556FSR GIPD041020131622FSR
t Irm
(ns) (A)
TJ= 175°C, VGE= 15V, IF = 15A, Vr = 400V
IC= 15A, VCC= 400V t doff
20

tf TJ =175°C
100
15

t don 10
tr TJ =25°C
10

1 0
2 12 22 32 42 RG(Ω) 0 200 400 600 800 di/dt(A/ µs)

Figure 28. Reverse recovery charge vs diode current

Figure 27. Reverse recovery time vs diode current slope
slope
GIPD041020131630FSR
t rr GIPD041020131635FSR
(µs) Qrr
IF = 15A, Vr = 400V (nC)
IF = 15A, Vr = 400V
160 TJ =175°C
600
120

TJ =175°C 400
80

TJ =25°C
40 200
TJ =25°C

0
0 200 400 600 800 di/dt(A/ µs) 0
0 200 400 600 800 di/dt(A/ µs)

Figure 29. Reverse recovery energy vs diode current slope

GIPD041020131638FSR
Err
(µJ)
IF = 15A, Vr = 400V

160

TJ =175°C
120

80

TJ =25°C
40

0
0 200 400 600 800 di/dt(A/ µs)

DS9881 - Rev 3 page 9/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics (curves)

Figure 30. Thermal impedance for IGBT

ZthTO2T_B
K
δ=0.5

0.2

0.1 0.05
-1
10
0.02
Zth=k Rthj-c
0.01 δ=tp/t

Single pulse tp

t
-2
10 -5 -4 -2 -1
tp (s)
-3
10 10 10 10 10

Figure 31. Thermal impedance for diode

DS9881 - Rev 3 page 10/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Test circuits

3 Test circuits

Figure 32. Test circuit for inductive load switching Figure 33. Gate charge test circuit

A A
C
L=100 µH k
G k

E B
B
C 3.3 1000 VCC
µF µF
k
G D.U.T
k
+ RG E

k
-
k

AM01504v1 AM01505v1

Figure 35. Diode reverse recovery waveform

Figure 34. Switching waveform

90%

VG 10%

90%

VCE tr(Voff)
10%
tcross

90% 25

IC td(off)
10%
td(on) tf
tr(Ion)
ton toff

AM01506v1

DS9881 - Rev 3 page 11/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

DS9881 - Rev 3 page 12/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
D²PAK (TO-263) type A2 package information

4.1 D²PAK (TO-263) type A2 package information

Figure 36. D²PAK (TO-263) type A2 package outline

0079457_A2_25

DS9881 - Rev 3 page 13/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
D²PAK (TO-263) type A2 package information

Table 8. D²PAK (TO-263) type A2 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.70 8.90 9.10
E2 7.30 7.50 7.70
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°

Figure 37. D²PAK (TO-263) recommended footprint (dimensions are in mm)

Footprint

DS9881 - Rev 3 page 14/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
D²PAK packing information

4.2 D²PAK packing information

Figure 38. D²PAK tape outline

DS9881 - Rev 3 page 15/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
D²PAK packing information

Figure 39. D²PAK reel outline

40mm min.
access hole
at slot location
B

D C

N
A

Tape slot G measured

in core for at hub
Full radius tape start
2.5mm min.width

AM06038v1

Table 9. D²PAK tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3

DS9881 - Rev 3 page 16/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
TO-220FP package information

4.3 TO-220FP package information

Figure 40. TO-220FP package outline

7012510_Rev_12_B

DS9881 - Rev 3 page 17/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
TO-220FP package information

Table 10. TO-220FP package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

DS9881 - Rev 3 page 18/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
TO-220 type A package information

4.4 TO-220 type A package information

Figure 41. TO-220 type A package outline

0015988_typeA_Rev_22

DS9881 - Rev 3 page 19/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
TO-220 type A package information

Table 11. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95

DS9881 - Rev 3 page 20/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Ordering information

5 Ordering information

Table 12. Order codes

Order code Marking Package Packing

STGB15H60DF GB15H60DF D2PAK Tape and reel

STGF15H60DF GF15H60DF TO-220FP

Tube
STGP15H60DF GP15H60DF TO-220

DS9881 - Rev 3 page 21/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF

Revision history

Table 13. Document revision history

Date Version Changes

12-Aug-2013 1 Initial release.

Document status promoted form preliminary to production data.
17-Oct-2013 2 Added Section 2.1: Electrical characteristics (curves).
Minor text changes.
Updated applications and description on cover page.
09-Apr-2019 3 Updated Section 4 Package information.
Minor text changes.

DS9881 - Rev 3 page 22/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.4 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

DS9881 - Rev 3 page 23/24

 STGB15H60DF, STGF15H60DF, STGP15H60DF

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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© 2019 STMicroelectronics – All rights reserved

DS9881 - Rev 3 page 24/24