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C5802 SavantIC PDF

This document provides product specifications for the SavantIC Semiconductor 2SC5802 silicon NPN power transistor. The transistor has a TO-3P(H)IS package and is suitable for high voltage, high speed applications such as color display horizontal deflection output. Key specifications include an 800V collector-emitter voltage rating, 10A continuous collector current rating, 60W power dissipation, and fast 0.1-0.3us fall time for switching applications. Dimensional outlines and pin configurations are provided.

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407 views3 pages

C5802 SavantIC PDF

This document provides product specifications for the SavantIC Semiconductor 2SC5802 silicon NPN power transistor. The transistor has a TO-3P(H)IS package and is suitable for high voltage, high speed applications such as color display horizontal deflection output. Key specifications include an 800V collector-emitter voltage rating, 10A continuous collector current rating, 60W power dissipation, and fast 0.1-0.3us fall time for switching applications. Dimensional outlines and pin configurations are provided.

Uploaded by

Jose Bezerra Filho
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5802

DESCRIPTION
·With TO-3P(H)IS package
·High voltage;high speed
·Wide area of safe operation

APPLICATIONS
·For high voltage color display horizontal
deflection output applications
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PINNING

PIN DESCRIPTION

1 Base

2 Collector

Fig.1 simplified outline (TO-3P(H)IS) and symbol


3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 10 A

ICM Collector current-Peak 30 A

PC Total power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5802

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A 3.0 V

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VBEsat Base-emitter saturation voltage IC=6A; IB=1.5A 1.5 V

ICES Collector cut-off current VCE=1400V; VBE=0 1.0 mA

ICBO Collector cut-off current VCB=800V; IE=0 10 µA

IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA

hFE-1 DC current gain IC=1A ; VCE=5V 15 48

hFE-2 DC current gain IC=6A ; VCE=5V 7 10

VCC=200V; IC=6A;IB1=1.2A
tf Fall time 0.1 0.3 µs
IB2=-2.4A;RL =33.3?

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5802

PACKAGE OUTLINE

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Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)

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