IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO.

6, JUNE 1999 1127

Cryogenic Processed Metal–Semiconductor–Metal

(MSM) Photodetectors on MBE Grown ZnSe
Hyesook Hong and Wayne A. Anderson, Senior Member, IEEE

Abstract— Molecular beam epitaxy grown 0.5-m and 2.0- Schottky barrier height and reduced carrier trapping at the
m thick undoped ZnSe on semi-insulating (100) GaAs sub- metal/semiconductor interface. Increasing the barrier height
strates were prepared for metal–semiconductor–metal (MSM) leads to low dark currents which are in turn critical for
photodetector devices. The MSM photodetectors consisted of
interdigitated metal fingers with 2, 3, and 4 m width/spacing on improving the minimum detectable power. Improving the
a wafer. A multilayer resist process was employed using polyimide metal/semiconductor interface leads to high speed devices
and SiO2 thin films before the pattern generation to aid in a spe- and improved detector sensitivity. Many MSM-PD’s in III–V
cial low temperature (LT) lift-off process. Dark current–voltage compound semiconductors have been studied for optical com-
(I 0V ), DC photo I 0V , high-frequency I 0V , spectral response, munication at 1.3 and 1.55 m [1]–[2], [6]–[8] wavelengths.
and frequency response techniques were employed for testing the
device performance. The cryogenic processed metallization pro- These have good saturation characteristics which are attributed
vided an improved interface between metal and semiconductor to narrow electrode width/spacing (submicron range), de-
interface. The breakdown voltage in these devices is dependent fined by -beam lithography, and small active area (usually
on the electrode width/spacing and not on film thickness. Dark m ) achieved by reducing the contact area at the
current remained at around 1 pA for a bias of 610 V. The metal/semiconductor interface. In this study, by employing
devices exhibited a high spectral responsivity of 0.6 (A/W) at a
wavelength of 460 nm at 5 V applied bias. A maximum spectral optical lithography, low dark currents were obtained on LT
responsivity of 1 (A/W) at an applied bias of 5 V was obtained processed ZnSe MSM-PD’s. Due to the lower dark currents
in these devices indicating an internal gain mechanism. This in these ZnSe MSM-PD’s, higher voltages can be applied
internal gain mechanism is attributed to hole accumulation in to obtain better charge collection as necessary for radiation
ZnSe epilayers. detector applications. This paper will present photolumines-
cence (PL), the fabrication procedure for LT processed ZnSe
I. INTRODUCTION MSM-PD’s, dark current–voltage ( ) characteristics, con-
tinuous wave (CW) photocurrent–voltage characteristics, high-
W IDE bandgap compound semiconductors such as those
in the ZnSe family and GaN family are very at-
tractive materials for future electro-optic devices such as
frequency photocurrent–voltage characteristics, frequency re-
sponse, and spectral response of these devices.
deep ultraviolet (DUV) light sources, electro-optic displays,
short distance communications, high density optical recorders II. EXPERIMENTAL
and readers. This is especially true for ZnSe since it is Elemental sources of Zn and Se were used for the MBE
closely lattice matched to GaAs hence facilitating optoelec- growth of ZnSe in a Riber MBE 32P system. The epilayer
tronic integrated circuits (OEIC) on GaAs. Of special interest growth of samples was monitored using 10 keV reflection
are the metal–semiconductor–metal photodetectors (MSM- high-energy electron diffraction (RHEED) to optimize the
PD’s) since they are useful for monolithically integrated growth conditions. The background pressure during growth
optoelectronic receivers in free space optical interconnects due was around 10 Torr. On initiating growth, the streaky
to their easy fabrication and compatibility with planar stacked RHEED pattern of the GaAs surface changes immediately
optics and with field effect transistors (FET’s) [1], [2]. MSM- into dim spots for a brief period, indicating an initial three-
PD’s consist of a semiconductor absorbing layer between two dimensional nucleation. The spots then elongate, and within a
electrodes deposited to form back-to-back Schottky contacts few minutes, the streaks are reestablished. This implies a layer-
on the semi-insulating substrate. by-layer growth once a smooth surface has been established.
Controlling the Schottky barrier height is an important 0.5 m and 2.0 m thick undoped ZnSe epilayers were grown
issue in fabrication of MSM photodetectors on covalent bond- on semi-insulating GaAs(100) at 300 C. After growth, the
ing semiconductors. Moreover, compound semiconductors, undoped ZnSe was cleaned in acetone, methanol, and de-
such as GaAs, InAs, and ZnS Se , show Fermi level ionized (DI) water, etched in HCl:DI H O (1:1) for 1 min,
pinning at the metal/semiconductor interface which limits etched in HF:DI H O (1:1) for 1 min, rinsed in DI water, and
the device characteristics. Previous studies [3]–[5] show that dried with N gas.
low temperature (LT) metallization resulted in an enhanced The fabrication procedure for LT processed MSM-PD’s is
Manuscript received August 26, 1998; revised December 22, 1998. The depicted in Fig. 1. Samples were placed on a spinner and
review of this paper was arranged by Editor P. K. Bhattacharya. cleaned with acetone followed by isopropanol at 4000 r/min
The authors are with the Department of Electrical and Computer Engineer-
ing, State University of New York at Buffalo, Amherst, NY 14260 USA. for 30 s. An adhesion promoter, Probimide QZ3289:QZ3290
Publisher Item Identifier S 0018-9383(99)04208-2. (1:9) was applied and allowed to sit for 10 s before spinning
0018–9383/99$10.00  1999 IEEE
1128 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO. 6, JUNE 1999

Fig. 1. Fabrication steps of low-temperature processed MSM-PD’s.

at 5000 r/min for 30 s. Polyimide 285 was applied and spun

at 4000 r/min for 2 min. Curing was done at 170 C for 1 h.
A 1200 Å SiO film was deposited on top of the Polyimide
by plasma enhanced chemical vapor deposition (PECVD) at a Fig. 2. SEM prior to metallization and a cross section of the ZnSe MSM-PD
substrate temperature of 150 C. P-20 (20% hexamethyldisi- structure with a 4 m/4 m electrode width/spacing.
azane) primer was applied to the sample, allowed to sit for 10
s, and spun until the primer was dry, usually at 4000 r/min for TABLE I
LT PROCESSED ZnSe MSM-PDS WITH DIFFERENT DESIGN PARAMETERS
30 s. Next, Shipley 1813 resist was applied to the sample and
immediately spun at 4000 r/min for 30 s. Photolithography
was done using a GCA 5:1 g-line stepper. After exposure, the
resist was developed in MF312:DI H O (1:1) for 45 s, rinsed
and blown dry.
The exposed area was etched into SiO by reactive ion
etching (RIE) in CHF and into polyimide by RIE in O .
This O etch removed the remaining resist, leaving only
the pattern of SiO /polyimide/ZnSe. Before metallization, the
samples were etched in HCl:DI H O (1:1) for 30 s and HF:DI
H O (1:1) for 30 s to remove any damage caused to ZnSe
after RIE and oxide layer patterning. The polyimide/SiO
patterning scheme adopted here facilitates lift-off and line- micrograph (SEM) prior to metallization and a cross section
width integrity when metallization is performed at liquid N of the MSM-PD.
temperatures. Subsequently, the sample was transferred to a
metal evaporation system capable of a Torr base III. RESULTS AND DISCUSSION
pressure. The substrate temperature is then lowered to 80 Table I lists the design information about all LT processed
K using a modified holder cooled with liquid N . Once the MSM-PD’s fabricated on the undoped ZnSe/SI-GaAs sub-
temperature stabilized, Pd was deposited and the substrate strates to be discussed here. Fig. 3 shows the dark data
holder temperature was raised back to room temperature for LT processed MSM-PD’s fabricated on 2.0- m thick ZnSe
using DC heating. Control samples were also fabricated by epilayers with 3- m and 4- m electrode width/spacing, on
depositing Pd at room temperature (RT). Lift-off was done 0.5- m thick ZnSe epilayers with 2 m and 3 m elec-
in 1165 remover which dissolved the polyimide layer over trode width/spacing, and a RT processed MSM-PD, fabri-
a period of 5–10 h. Fig. 2 shows the scanning electron cated on 2.0- m thick ZnSe epilayers with 2- m electrode
HONG AND ANDERSON: CYROGENIC PROCESSED METAL-SEMICONDUCTOR-METAL (MSM) PHOTODETECTORS 1129

(a)

(b)

0
Fig. 3. Dark I V characteristics of ZnSe MSM-PD’s for various electrode
width/spacing.
(c)

width/spacing. Dark currents were generally less than 1 pA up

to a bias of 10 V for all ZnSe MSM-PD’s fabricated by the LT
process. However MSM-PD’s processed by RT metallization
are leaky. Dark currents obtained from LT processed MSM-
PD’s are low compared to the other reports on InGaAs [9] or
GaN [10] MSM-PD’s.
Dark can be expressed by (1) for MSM-PD’s if the
simplest thermionic emission model [7] is used as

(1)
Fig. 4. CW Photocurrent–voltage characteristics of MSM-PD’s (a) #A, (b)
#C, and (c) #E.
where and are the effective Richardson constants for
the electrons and holes, respectively, are the respective
barrier heights, is electron charge, is Boltzman constant, Fig. 4 shows continuous wave (CW) photo character-
and is absolute temperature in Kelvin. is the image istics of MSM-PD’s #A, #C, and #E in Table I. These MSM-
force lowering term at the cathode, and is at the anode. PD’s were uniformly illuminated using a quartz tungsten
Using a Richardson factor of 25.2 A cm T for electrons halogen lamp (CW light source) at various optical power
and 72 A cm T for holes, a barrier height of 1.3 eV levels. In Fig. 4(a), the curve consists of two regions;
for electrons and holes was obtained. Barrier height values the photocurrent first rapidly increases as bias increases, and
were also confirmed by measuring single Schottky devices. then saturates. This rapid increase of photocurrent in the low
Since the barrier heights obtained are about half the bandgap bias region is due to the expansion of the depletion region in
of ZnSe, the dark leakage current should be at a theoretical the reverse bias Schottky junction and the improved internal
minimum [9]. Fig. 3 also shows a sharp breakdown voltage quantum efficiency [1]. The shoulder or the knee voltage,
for all values of different electrode width/spacing. In con- where the photocurrent starts to saturate, locates between 0.7
trast to ZnSe pin photodetectors which showed a breakdown and 1.5 V depending on the extent of the incident optical
voltage dependence on the -layer thickness [11], breakdown power. Up to the shoulder voltage, the increasing carrier
voltages here exhibit a linear dependence on only the electrode collection efficiency as the bias increases can be explained in
width/spacing of ZnSe MSM-PD’s. Breakdown voltages of 25 terms of the finite carrier lifetime model [6]. Above the shoul-
V, 36 V, and 50 V are obtained for the 2 m, 3 m, and 4 der voltage, if photocurrent does not increase with applied
m electrode width/spacings, respectively. voltage, it indicates that all the photoexcited carriers reach
1130 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO. 6, JUNE 1999

(a)

Fig. 5. Comparison for threshold voltage and transimpedance with thickness

and electrode line width/spacing in MSM-PD’s at a optical level of 40 W.

the opposite side electrodes before they recombine [12] or the

carrier generation rate is higher than the carrier sweep-out rate
[13]. However, perfect saturation of the photocurrent is not
seen in Fig. 4(a), which can be explained by an internal gain
mechanism [1]. Although the exact internal gain mechanism
(b)
is moot, it has been postulated that when photo-generated
Fig. 6. Photocurrent–voltage characteristics of MSM-PD’s (a) #A and (b) #C
holes are accumulated at the valence-band peak near the using 100 fs pulsed Ti:Sapphire mode-locked laser at a wavelength of 448 nm.
cathode, these positive charges increase electron tunneling
current and a similar effect takes place at the anode [6]. It
is also possible that this effect is caused by long lifetime traps The saturation current behavior is a major feature for
located either at the metal/semiconductor interface or bulk applying an active impedance load such as FET’s to design
layer [1], [3], [8]. The ZnSe MSM-PD #C in Table I, having photoreceiver circuits in the integrated optoelectronic devices.
0.5 m thickness and 3 m electrode width/spacing with the So, the large differential output transimpedance within the
same active area as #A showed the improved saturation current saturation current region enables the practical use of FET’s
in Fig. 4(b). This result supported the theory that the internal because the characteristics of MSM-PD’s are so similar
gain mechanism is associated with traps in the bulk layer. to the output characteristics of a FET. Fig. 5 shows a com-
However the photocurrent (detector sensitivity) in Fig. 4(b) at parison of photo for photo-transimpedance and shoulder
the same incident optical power is less than in Fig. 4(a). It voltage associated with flat band voltages among MSM-PD’s
might be that the detector did not absorb most of the incident #A, #B, #C, #D, and #E at a 40 W optical power level.
light due to thin layers. Fig. 4(c) shows the DC photo Photo-transimpedance is given by at a certain optical
characteristics for MSM-PD #E, having an 0.5 m thick ZnSe power level (analogous to the gate bias of a FET). All ZnSe
epilayer with the same electrode width/spacing (3 m), but MSM-PD’s showed high transimpedance ranging from 20 to
with four times smaller active area ( m m) than 70 k at 40 W optical power level in the saturation region.
MSM-PD #A and #C. Compared to PD #A, the photo As another comparison between PD’s, the shoulder voltage is
of PD #E exhibits excellent saturation behavior indicating correlated with semiconductor epilayer thickness not with the
less internal gain as a result of reduction in area and the device electrode width/spacing in this study, in contrast to the
layer thickness. However, PD #E did not demonstrate a better other study [1], [14].
saturation behavior than PD #C by reducing the contact area Fig. 6 shows the high frequency photo characteristics
indicating that the gain mechanism is associated with bulk of MSM-PD’s #A and #D (Table I). Here a Spectra Physics
layer traps. For MSM-PD’s fabricated with conventional room Tsunami Ti:Sapphire 100 fs pulsed laser with 80 MHz repeti-
temperature metallization, saturation current characteristics tion rate was used. The mode locked laser beam was passed
were not observed. through a barium borate (BBO) crystal for frequency doubling
HONG AND ANDERSON: CYROGENIC PROCESSED METAL-SEMICONDUCTOR-METAL (MSM) PHOTODETECTORS 1131

Fig. 7. Experimental setup for frequency response for ZnSe MSM-PD’s using a 100 fs pulsed/frequency doubled Ti:Sapphire laser through the BBO crystal.

(a)

(b)
Fig. 8. Frequency response of ZnSe MSM-PD’s (a) #C and (b) #D using 100 fs pulsed Ti:Sapphire mode locked laser at a wavelength of 448 nm.
1132 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO. 6, JUNE 1999

leading to a wavelength of 448 nm, above the ZnSe bandgap

energy. The full width half maximum (FWHM) of laser beam
size is around m , which is six times larger than
the active area of the MSM-PD’s. Therefore, optical power
captured by the detector is smaller than the power mentioned in
Fig. 6. Comparing this to the CW photo characteristics,
the saturation behavior at higher bias voltage in Fig. 6(a) is
not good. Reducing the thickness of the bulk layer showed a
little better saturation behavior but still worse than in the CW
photocurrent saturation data. However, reducing the electrode
width/spacing did not improve the saturation (internal gain
was not influenced) for the high frequency photoresponse.
This result again supports the theory that the internal gain
in the ZnSe MSM-PD’s may be due to long lifetime traps
in the bulk layer rather than at the metal/semiconductor
interface.
Fig. 7 shows the schematic experimental setup for frequency
response based on impulse response with the assumption
of the input optical signal as a train of delta functions.
Impulse response of the MSM-PD’s was obtained by optical
excitation with a 100 fs pulsed mode locked Ti:Sapphire Fig. 9. Experimental setup for spectral response of LT processed ZnSe
MSM-PD’s using a Xenon white light source.
laser at a wavelength of 448 nm. The output signal was
detected by a Tektronix 492 spectrum analyzer. Taking Fourier
transformation, the temporal response for the MSM-PD’s can
be obtained.
Fig. 8 shows the frequency response of ZnSe MSM-PD’s
(a) #C and (b) #D and their Fourier transformed temporal
response in insets to the 100 fs pulse laser input having
80 MHz repetition rate. The 3 m MSM-PD showed a 3
dB frequency of 620 MHz and its associated temporal pulse
width (FWHM) of 770 ps. The 2 m device demonstrated
a 3 dB frequency of 800 MHz and its corresponding pulse
width of 640 ps. FWHM’s of pulse width were obtained
by taking the Fourier transform of frequency response. The
frequency response showed that the 2 m device had improved
device speed due to the short carrier transit time between
electrodes.
Fig. 9 shows the experimental setup for spectral response
at a low optical frequency of 300 Hz chopper speed. The Fig. 10. Spectral response of LT processed ZnSe MSM-PD’s #A, #C, and
monochromatic wave was extracted from a xenon white #D at a bias of 5 V using a Xenon light source modulated at 300 Hz.
light source through the monochrometer. Monochromatic
light was focused onto the device under test (DUT) to
obtain maximum output signal at the given incident optical internal gain by reducing the epilayer thickness. Such internal
power. The light source was first calibrated by a commercial gain can be seen in photoconductor type of photodetectors.
silicon p-i-n photodetector. The output signals from DUT Internal gain ranges from 2.6 to 3.6 in LT processed ZnSe
and silicon p-i-n photodetector were taken by using a MSM-PD’s.
lock-in amplifier. For all the MSM-PD’s, a reverse bias Photoluminescence (PL) spectra were taken at 10 K on
of 5 V was applied. Fig. 10 shows spectral response MBE grown undoped 2.0 m and 0.5 m thick ZnSe/SI-
of ZnSe MSM-PD’s #A, #C, and #D. However, since GaAs (100). Fig. 11 shows PL spectra of undoped a) 2.0
the lenses had a cutoff wavelength at 300 nm, spectral m thick, b) 0.5 m thick ZnSe samples. Fig. 11(a) shows
response below 300 nm could not be obtained in this a strong free exciton (Fx) signal at an energy of 2.803 eV
experiment. The device shows a cutoff wavelength of 460 and free-to-bound exciton (Bx) peak at an energy of 2.79 eV
nm at room temperature. Responsivities of 1 A/W are similar to those seen in a typical undoped ZnSe/GaAs (100)
obtained at a wavelength of 380 nm from these PD’s PL spectra [15], [16]. A strong Fx peak indicates an undoped
#A and #D, without an anti-reflecting coating, signifying layer with a high crystalline quality. This PL spectra possibly
an internal gain mechanism to be present. For PD #C, shows a longitudinal optical (LO) phonon signal related to the
increasing the bias voltage ( 5 V) did not result in a Bx at 2.76 eV (about 30 meV). Also, at a lower energy level
dramatic increase of responsivity, indicating the reduced near 2.6 eV called the Y-line, a sharp signal can normally be
HONG AND ANDERSON: CYROGENIC PROCESSED METAL-SEMICONDUCTOR-METAL (MSM) PHOTODETECTORS 1133

the responsivity of 1 (A/W) at a wavelength of 380 nm

and 0.6 (A/W) at a wavelength of 450 nm and at a bias
of 5 V were obtained without any anti-reflecting coating
layers.

ACKNOWLEDGMENT
The authors wish to thank H. Luo of the Physics De-
partment, for providing samples, A. Petrou of the Physics
Department, for PL measurement, and A. Cartwright of the
Electrical Engineering Department, for allowing the use of a
Ti:Sapphire laser. The assistance provided by M. Skvarla for
the part of this work carried out at the Cornell Nanofabrication
Facility is also acknowledged.
(a)

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1134 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO. 6, JUNE 1999

Hyesook Hong received the B.S. degree in elec- Wayne A. Anderson (S’68–M’70–SM’82) received
tronics engineering from Sung Kyun Kwan Uni- the Ph.D. in electrical engineering in 1970, with an
versity, Suwon, Korea, in 1983, the M.S. degree emphasis in semiconductors and microwaves.
in electrical engineering from the University of His experience includes industrial R&D
Colorado, Boulder, in 1991, and the Ph.D. degree in (1962–1965), and university teaching
electrical engineering from State University of New (1966–present) with eight years at Rutgers
York at Buffalo in 1998. Her Ph.D. work focused University and the remaining at State University of
on characterization, fabrication, and applications of New York at Buffalo. His present research interests
ZnSe devices. include thin-film resistors and capacitors, thin-film
From 1983 to 1989, she was with the Korea silicon for solar cells and flat panel displays, and
Telecommunication Authority as a Software En- metallization of wide-bandgap semiconductors.
gineer. In 1998, she joined Headway Technologies, Inc., Milpitas, CA. He has supervised the completion of 44 M.S. or Ph.D. theses/dissertations
Her current interests are fabrication, modeling, and characterization for and coauthored over 200 conference presentations as well as over 150
semiconductor devices. journal articles.
Prof. Anderson is a member of APS and MRS.