FABRICATION OF Si/Si02/Cu2O

Presented by: Under the supervisor :

Khrievilie Seyie Dr. Naorem Khelchand Singh
Reg.No: 2020104232 Assistant Professor
(ECE, NIT Nagaland) Department of ECE,
And NIT Nagaland
Pangjungnungsang
Reg.No: 2020104240
(ECE, NIT Nagaland)
 Contents
 Introduction

➢ Deposition technique

➢ Objective

➢ Proposed Structure

➢ Literature review

➢ Future work

➢ References
 Introduction

➢ Nanotechnology : Nanotechnology is the manipulation and control of materials and devices at the
nanoscale, typically involving structures and properties at the nanometer level (one billionth of a
meter).

➢ Photodetector :A photodetector is a device that detects and measures light or other electromagnetic
radiation, typically converting it into an electrical signal.
 Applications :
➡ Missile Warning
➡ Ozone-hole Monitoring
➡ Flame and Electrical Discharge Detection
➡ Medical Imaging
➡ Remote Sensing
✦ Types of Photodetectors :
➡ Photoconductive diode
➡ Avalanche Photodiode
➡ PIN photodiode.

✦ Classification of Nanomaterials :
➡ 0 Dimension- example: quantum dots
➡ 1 Dimension- example: nanowires
➡ 2 Dimension- example: thin films
➡ 3 Dimension- example: bulk nanomaterials.
 Deposition Technique
Glancing Angle Deposition (GLAD): GLAD is a
modification of the standard electron beam evaporation
technique. In GLAD, the angle at which the vapor flux
impinges on the substrate is crucial. Instead of directing the
vapor perpendicular to the substrate surface, GLAD
involves tilting the substrate and/or the vapor source, so
that the vapor flux arrives at a glancing angle. This angle is
typically shallow, often less than 10 degrees from the
surface normal.
Glancing Angle Deposition (GLAD) is a specialized thin
film deposition technique often used with electron beam
evaporators. It involves directing the vapor flux onto the
substrate at a shallow angle rather than perpendicular to
create controlled microstructures.

Fig 1: Electron Beam Evaporator Machine

 GLAD allows for the formation of thin films with
distinctive properties, such as highly tilted or vertically
aligned columns, making it valuable for applications like
optical coatings and photonic devices. However, it requires
precise control of deposition parameters and may introduce
shadowing effects.

Fig 2: (a) Schematic diagram of the glancing angle deposition (GLAD)

technique and (b) vapor flux, column and growth orientation with angle
denitions: is the vapor flux incident angle and is the column angle.
 Objective

➢ To fabricate Si/SiO2/Cu2O for self powered photodetector.

PROPOSED STRUCTURE

Cu2O NW

SiO2
TF
Si

Fig 3: Structure of the proposed photodetector

 LITERATURE REVIEW BASED ON PHOTODETECTOR
Photodetector Wavelength Responsivity Detectivity Rise time Fall time Ref.
(A/m)

Tio2 film 300 nm 1.73 - 7000 s 3000 s [1]

Fe2o3 thin film 573 nm 1.41 9.93×1012 jones 0.06 ms - [2]

Wo3 nano wire 360 nm 9.66 5.4×1012 jones 1.78 s 1.09s [3]

Zno film 375 nm 0.86 - 0.29 s 0.10 s [4]

Gallium oxide 265.5 nm 70.26 1.26×1014 jones 0.41 s 0.02 s [5]

V2o5 nanosheets 365 nm 0.062 - 6500 s 7500 s [6]

Nio film 367 nm 4.5 - 266 ms 200 ms [7]

Photodetector Wavelength Responsivity Detectivity Rise time Fall time Ref.
(A/m)

Vo2 thin film 532 nm 353 - 0.0016 s 0.0016 s [8]

In2o3 nanowires 405 nm - - 3s 13s [9]

Ga2o3 thin films 274 nm 0.028 5.1×1011 jones 0.03 s 0.04 s [10]

Zno film 305 nm 124 - 0.82 s 0.64 s [11]

Sno2 nanowires 320 nm - - 50 s - [12]

Wo3 nanoshale 335nm 5.1 - 6.3s 0.5s [13]

Snox thin films 365 nm 0.0218 5.8×1011 jones - - [14]

Tio2 thin film 200 nm 18 3×1012 jones 0.09s 0.24s [15]

 Future Work

➢ Selection of Material.

➢ Study of Material properties.

➢ Fabrication of the photodetector.

 References:
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thin-films: Effect of reactive gas pulsing process. Journal of Alloys and Compounds, p.171851.

[2]. Kaawash, N.M., Halge, D.I., Narwade, V.N., Alegaonkar, P.S. and Bogle, K.A., 2023. High-performance and ultra-sensitive
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THANK YOU