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Problems BJT DC Analysis

This document contains 10 problems related to analyzing BJT and JFET circuits using DC analysis techniques. The problems involve calculating currents, voltages, operating points, and determining transistor states and regions of operation given component values and input voltages. Calculations are required to test assumptions made about transistor and diode states within circuits.

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163 views2 pages

Problems BJT DC Analysis

This document contains 10 problems related to analyzing BJT and JFET circuits using DC analysis techniques. The problems involve calculating currents, voltages, operating points, and determining transistor states and regions of operation given component values and input voltages. Calculations are required to test assumptions made about transistor and diode states within circuits.

Uploaded by

Sems Krks
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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EEE311- Problems /BJT-JFET DC Analysis

Vo
Q1) Vδ = 0.7 V, Vbe=0.7 V, β=100
6V
(a) Find the required V2 voltage in order to enter the transistor saturation when V1=0 V.
10 K
(b) Find Ib, Ic, diode currents (Id1, Id2), Vbe and Vo for V1= V2=8 V and V1= V2= -5 V.
1 KΩ

V1=V2, V Ib, mA Ic,mA Id1, mA Id2, mA Vbe, V Vo, V D1 D2


8
V1 V2
-5
Ans: No solution for V1= V2=8 V

Q2) Find Id, Is, Ig, Vgs, Vo, Vx, Vds, state and region of JFET for Vi= 0,-3 and 3 V. Idss=4 mA, Vp=2 V Vs= 5

Vi , V Id, mA Is,mA Ig, mA Vgs, V Vo, V Vx, V Vds, V state region Vx


1mA
0 Vo
-3
Vi
3
Vdd= 12 V
Ans: Vds= ─ 4V, ─ 1V, ─ 7 V for Vi = 0, ─3 and 3 V
Vd= ─5 V
T1

Q3) Find the Id and Vds voltages of both transistors. Vp= -2 V, Idss=6 mA.
Rs1=1 K
Ans: Vds1= 10.816 V, Vds2= 11 V,

T2

200K

1mA

-12 V Vss= -12 V


12 V
Q4) Use one alpha analysis to find operating point of each transistor and
I2
VI2
Voltage drop across the constant currents sources. Vbe= ─ 0.7 V 0.5 mA
I1
Ans: Vce1= ─ 5.7 V; V ce2= ─1.2 V VI1 I3
2 mA 3K
0.25 mA

3K V I3
T1
5K
T2
3K
4K
2K

─9 V
5V

Q5) Vδ = 0.7 V, Vbe=0.7 V, Vce,sat=0.2 V β=20.


(a) Assume the transistor in figure is cut off and the diode ON. 5K
5K
Test the assumptions. Clearly state any contractions you find or verify the assumption.
D
(b) Assume the transistor in figure is active and the diode ON. 5K

Test the assumptions. Clearly state any contractions you find or verify the assumption.

(c) Assume the transistor in figure is saturated and the diode ON.
Test the assumptions. Clearly state any contractions you find or verify the assumption Vcc=15 V

Q6) The Zener diode in given figure has Vz=7 V and Vγ=0.7 V. If IL=20 mA and β=50 7.8 K

(a) Find collector current and Zener current T2


Vo
(b) Find output voltage and collector-emitter voltage
(c) Determine the state of Zener diode and state and region of transistor 4.7 K IL

Ans: Vce=8.7 V
Vx = 9 V
Q7) The simple two-resistor bias circuit shown in figure can be used to bias
transistor. β=50, Svbe= 0.7246 mS. Find R, Q-point Q(Ic, Vce), Vbe and base voltage.
Ans: R= 1K
Vcc=10 V 18 K
Q8) For given BJT circuit β=100, Vγ1=0.7 V, Vγ2=2 V (for LED) R

Vi is bipolar square waveform having a peak to peak voltage of 8 V RC=1 K


and frequency of 100Hz. Vo
(a) Draw Vi, Vbe, Vo, ID1, Ib, Ic, Iled on the same scale. R B=10 K
Vi D2
(b) Find the critical input voltage level that makes LED is ON.
D1
Ans: (b) Vi <1.5 V 10 V

Q9) Find all current and voltages. Vbe=0.7 V, V ce,sat=0.5 V, ICEO=0.5 mA, β=100.
1.5 K
10 K
Vo

1K
-30 V

Q10) In the circuit, Vbe=0.7 V, Vce(sat)=0 V, and β=100. 100 KΩ


500 KΩ 100 KΩ
-5 V
(a) Find the Q(Ic, Vce) point.
500 KΩ
-3V Vo
(b) Draw DC and AC load lines.
(c) Determine the undistorted voltage at the output. 5V
70 KΩ
(d) Determine maximum symmetrical swing voltage at the output. 5 KΩ
C
Ans: Q(0.23m A, ─7.35 V)
5V

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