Devansh Raghuwanshi 

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BASICS ELECTRONICS ENGINEERING - REPORTS

OVERALL ANALYSIS COMPARISON REPORT SOLUTION REPORT

ALL(38) CORRECT(0) INCORRECT(0) SKIPPED(38)

Devansh Raghuwanshi
Course: GATE+ESE
Electrical Engineering (EE)
Q. 1

In the p-type Ge sample, intrinsic carrier concentration ni  = 2.5 × 1010/cm3 and concentration of holes in the valance band is 4
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× 1015/cm3 under thermal equilibrium condition. Then minority concentration in Ge sample is
FAQ Have any Doubt ?
MY TEST

A 0.56 × 105/cm3
BOOKMARKS

MY PROFILE B 1.00 × 105/cm3

REPORTS
C 1.25 × 105/cm3
BUY PACKAGE

D 1.56 × 105/cm3
ASK AN EXPERT
Correct Option

Solution :
(d)
 QUESTION ANALYTICS

Q. 2

In a hall experiment, the p-type specimen carries current in the positive x-direction and the applied magnetic field is in the
positive z-direction. Then the resultant force on the charge carriers due to magnetic field will be in
FAQ Have any Doubt ?

A positive y-direction

B negative y-direction
Correct Option

Solution :
(b)

C negative z-direction

D positive z-direction

QUESTION ANALYTICS

Q. 3

In an n-type gallium arsenide semiconductor at a temperature T = 300 K, the electron concentration varies linearly from 1017 to
1018 –3 di t f01 If th l t diff i ffi i ti D 500 2/ th th l t diff i t
1018 cm–3 over a distance of 0.1 cm. If the electron diffusion coefficient is Dn  = 500 cm2/s, then the electron diffusion current
density will be
FAQ Have any Doubt ?

A 500 A/cm2

B 550 A/cm2

C 640 A/cm2

D 720 A/cm2
Correct Option

Solution :
(d)

QUESTION ANALYTICS

Q. 4

In a P +N junction diode, the ratio of donor concentration (Nd ) to acceptor concentration (Na ) is 0.25, then the ratio of width on
p-side to width on n-side of the diode is
FAQ Have any Doubt ?

A 4
 B 5

C 2.5

D 0.25
Correct Option

Solution :
(d)

QUESTION ANALYTICS

Q. 5

A silicon PN junction diode carries a forward current of 1.2 mA, the carrier life time at the junction is 5 × 10–11 sec. Then the
diffusion capacitance of the diode is
(Assume = 2 for silicon diode, VT  = 26 mV)
FAQ Have any Doubt ?

A 1.154 nF

B 11.54 nF

C 1.154 pF
Correct Option
 Correct Option

Solution :
(c)

D 11.54 pF

QUESTION ANALYTICS

Q. 6

Consider the following statements regarding Ebers-Moll equivalent-circuit model of BJT:

(i) Ebers-Moll model treats BJT as two coupled back-to-back diodes, in parallel with controlled current sources.
(ii) In saturation mode, BJT is in low impedance state.
(iii) In active mode, BJT is in very high impedance state.
Which of the above statements is/are correct?
FAQ Have any Doubt ?

A (i) and (ii) only

Correct Option

Solution :
(a)
In Ebers-Moll model, in the cut off mode, BJT is in very high impedance state.

B (ii) and (iii) only

C (i) and (iii) only

D (i), (ii) and (iii)

 QUESTION ANALYTICS

Q. 7

In a Bipolar Junction Transistor (BJT), as the base width decreases which one of the following parameters will decrease?
FAQ Have any Doubt ?

A emitter injection efficiency

B the base transport factor

C common emitter current gain (β)

D the magnitude of the early voltage (VA )

Correct Option

Solution :
(d)

QUESTION ANALYTICS

Q. 8

For the transistor circuit shown below, the minimum value of IB  required to saturate the transistor is
 FAQ Have any Doubt ?

A 20 μA

B 40 μA

C 50 μA
Correct Option

Solution :
(c)

D Transistor never goes to saturation

QUESTION ANALYTICS

Q. 9

In a certain transistor, the base current is 2 percent of the emitter current. Then the large signal common collector current gain (
) is
FAQ Have any Doubt ?

A 40

B 45

C 50
 C 50
Correct Option

Solution :
(c)

D 55

QUESTION ANALYTICS

Q. 10

Consider the following statements :

In a Bipolar Junction Transistor, to prevent thermal runaway:

Which of the above statements is/are correct?

FAQ Have any Doubt ?

A (i) only
Correct Option

Solution :
(a)

B (ii) only

C Both (i) and (ii)

 C Both (i) and (ii)

D Neither (i) nor (ii)

QUESTION ANALYTICS

Q. 11

The gate to source voltage (VGS) of a MOSFET with threshold voltage of 0.4 V, working in saturation is 0.9 V and the drain
current is 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating in saturation
region, the drain current for VGS  of 1.4 V is
FAQ Have any Doubt ?

A 1 mA

B 2 mA

C 3 mA

D 4 mA
Correct Option

Solution :
(d)
 QUESTION ANALYTICS

Q. 12

The transconductance (gm ) of a junction field effect transistor (JFET) can be expressed as
FAQ Have any Doubt ?

Correct Option

Solution :
(b)

D
 QUESTION ANALYTICS

Q. 13

Consider the following statements regarding pinch off voltage (Vp ) of JFET
(i) Vp depends on doping concentration of the channel
(ii) Vp depends on channel width
(iii) Vp depends on channel length
Which of the above statements is/are correct?
FAQ Have any Doubt ?

A (i) only

B (ii) and (iii) only

C (i) and (ii) only

Correct Option

Solution :
(c)
Vp is independent of channel length.

D (i), (ii) and (iii)

QUESTION ANALYTICS

Q. 14

A silicon PN junction solar cell has an efficiency of 25 percent and it is producing an output electrical power of 20 μW. Then the
optical power incident on the solar cell is
FAQ Have any Doubt ?

A 5 μW
 B 50 μW

C 80 μW
Correct Option

Solution :
(c)

D 100 μW

QUESTION ANALYTICS

Q. 15

Which one of the following devices exhibits “negative resistance” property?

FAQ Have any Doubt ?

A photodiode

B tunnel diode
Correct Option

Solution :
(b)
 (b)

C varactor diode

D hot-carrier diode

QUESTION ANALYTICS

Q. 16

A GaAs LED has an energy bandgap of 1.42 eV. This LED produces light at a wavelength of
FAQ Have any Doubt ?

A 0.87 μm
Correct Option

Solution :
(a)

B 8.7 μm

C 87.3 μm

D 873 μm
 QUESTION ANALYTICS

Q. 17

Consider the clipper circuit shown in the figure below:

If the diode D is ideal and the input is a sinusoidal signal with peak voltage of 8 V, then
FAQ Have any Doubt ?

A The output is a part of sine wave between 0 to 4 V.

B The output is a part of sine wave between –8 V to 4 V.

C The output is a part of sine wave between 4 V to 8 V.

Correct Option

Solution :
(c)

D The output is a part of sine wave between –4 V to –8 V.

 D The output is a part of sine wave between 4 V to 8 V.

QUESTION ANALYTICS

Q. 18

Consider the Zener voltage regulator shown in the figure below:

The Zener diode has Vz  = 10 V, Iz (min)  = 5 mA and Iz (min) = 24 mA. The range of value of the load resistance RL , for proper
regulation, is equal to
FAQ Have any Doubt ?

A 400 kΩ to 1.667 MΩ

B 0.4 kΩ to 1.667 kΩ
Correct Option

Solution :
(b)
 C 200 Ω to 800 Ω

D 200 kΩ to 800 kΩ

QUESTION ANALYTICS

Q. 19

Consider the clamper circuit shown in the figure below:

If Vin  = Vm sin(ωt) and the diode has a cutin voltage of 0.7 V, then which one of the following diagrams will represent the
output signal Vout  at steady state.
FAQ Have any Doubt ?

B
 C

Correct Option

Solution :
(c)

QUESTION ANALYTICS

Q. 20

Consider the circuit shown in the figure below:

Assume RL  to be very large and the diodes to be ideal, then the DC value of the output voltage V0  is equal to
FAQ Have any Doubt ?

A 15 V
Correct Option

Solution :
(a)

B –12.34 V

C –10 V

D 13.33 V

QUESTION ANALYTICS

Q. 21

Consider a silicon transistor based circuit as shown in the figure below:

If α = 1 for the transistor, then the approximate value of the output voltage V0  is equal to
FAQ Have any Doubt ?

A 6.67 V

B 9.24 V

C 16.61 V

D 14.03 V
Correct Option

Solution :
(d)

QUESTION ANALYTICS

Q. 22

The transistor given in the circuit below has The power dissipated in the transistor is
The transistor given in the circuit below has The power dissipated in the transistor is

equal to

FAQ Have any Doubt ?

A 2 mW

B 3 mW

C 4.5 mW
Correct Option

Solution :
(c)
 D 5 mW

QUESTION ANALYTICS

Q. 23

Consider the circuit shown in the figure below.

The stability factor ‘S ’ for the circuit is equal to

FAQ Have any Doubt ?

Correct Option
 Solution :
(b)

D None of these

QUESTION ANALYTICS

Q. 24

If PC  is the power absorbed by the collector junction and PD  is the power dissipated by the collector junction, then the
condition required to eliminate thermal run-away in BJT will be
FAQ Have any Doubt ?

A
 B

Correct Option

Solution :
(b)

QUESTION ANALYTICS

Q. 25

For a fixed bias circuit, the stability factor is equal to

FAQ Have any Doubt ?

A β

B 1+β
Correct Option

Solution :
(b)
 C

QUESTION ANALYTICS

Q. 26

In an npn silicon transistor the value of IC  = 50 μA, the value of VCE  = 5 V and thermal voltage VT  = 25 mV. If the current gain
of the transistor β = 100 in CE connection, then the value of small signal resistance rπ  will be
FAQ Have any Doubt ?

A 5 kΩ

B 50 kΩ
Correct Option

Solution :
(b)

C 500 kΩ

D 2.5 kΩ

QUESTION ANALYTICS

Q 27
Q. 27

An h-parameter model is constructed and various parameters are measured. To measure the input resistance an ideal ammeter
is connected across the load resistance RL . The value of input resistance measured will be equal to
FAQ Have any Doubt ?

C
Correct Option

Solution :
(c)

QUESTION ANALYTICS

Q. 28

A common base amplifier has hib  = 30 Ω, hrb  = 4 × 10–6, hfb  = –0.99, hob  = 8 × 10–7 S and RL  = 20 kΩ. The current gain AI  is
equal to
FAQ Have any Doubt ?

A 0.974
Correct Option

Solution :
(a)
 B 0.999

C 0.921

D 0.891

QUESTION ANALYTICS

Q. 29

For a BJT if Cμ  = 10 nF and Cπ  = 5 nF, then the value of unity gain frequency fT  of the transistor with transconductance gm  =
30 mS is equal to
FAQ Have any Doubt ?

A 31830.9 Hz

B 318.309 kHz
Correct Option

Solution :
(b)

C 2883 MHz
 D 288.34 kHz

QUESTION ANALYTICS

Q. 30

In a voltage-shunt configuration we perform

FAQ Have any Doubt ?

A series mixing and shunt sampling

B series mixing and series sampling

C shunt mixing and shunt sampling

Correct Option

Solution :
(c)
Voltage shut is also known as shunt-shunt feedback amplifier. Thus we perform shunt mixing and shunt sampling.

D shunt mixing and series sampling

QUESTION ANALYTICS

Q. 31

The limit on high frequency operation of a bipolar junction transistor is because of

FAQ Have any Doubt ?

A The early effect

P ii i d i l
 B Parasitic inductive element

C High current effect in the base

D Transistor capacitances
Correct Option

Solution :
(d)
At high frequencies the gain of the transistor falls due to the effect of internal junction capacitances also known as
transistor capacitances.

QUESTION ANALYTICS

Q. 32

Assertion (A): The diffusion capacitance of a PN junction diode increases with increase in the forward current.
Reason (R): The forward current of a PN junction diode is independent of variations in temperature.
FAQ Have any Doubt ?

A a

B b

C c
Correct Option

Solution :
(c)
 D d

QUESTION ANALYTICS

Q. 33

Assertion (A): In a PN junction diode, an electric field exists in the depletion region due to the net space charge density.
Reason (R): The direction of the electric field is from p-region to n-region.
FAQ Have any Doubt ?

A a

B b

C c
Correct Option

Solution :
(c)
The direction of the electric field is from n-region to p-region.

D d

QUESTION ANALYTICS

Q. 34

Assertion (A): In a PN junction diode, the dynamic forward resistance is inversely proportional to the forward current.
Reason (R): As temperature increases by keeping the diode current constant, the dynamic forward resistance will decrease.
FAQ Have any Doubt ?
 A a

B b

C c
Correct Option

Solution :
(c)

D d

QUESTION ANALYTICS

Q. 35

Assertion (A): MOSFET has high input impedance than JFET and BJT.
Reason (R): MOSFET is a majority carrier device.
FAQ Have any Doubt ?

A a

B b
Correct Option

Solution :
(b)

C c
 C

D d

QUESTION ANALYTICS

Q. 36

Assertion (A): A fixed biased circuit is more stable compared to a voltage divider biased circuit.
Reason (R): A fixed biased circuit has a constant value of base current irrespective of the variation in ICO .
FAQ Have any Doubt ?

A a

B b

C c

D d
Correct Option

Solution :
(d)
Fixed biased circuit is less stable than self biased /voltage divider biased circuit.

QUESTION ANALYTICS

Q. 37

Assertion (A): In a JFET amplifier, high frequency response can be improved by using peaking circuit containing inductor as a
feedback element between drain and gate.
Reason (R): The inductor cancels out the miller effect caused by the transition capacitance.
FAQ Have any Doubt ?
 A a
Correct Option

Solution :
(a)
The inductor and capacitor will form a parallel LC circuit thus if it is tuned at the operation frequency the circuit will behave
as an open circuit.

B b

C c

D d

QUESTION ANALYTICS

Q. 38

Assertion (A): Wien bridge oscillator is generally used as a variable audio frequency oscillator.
Reason (R): For high frequency oscillation, a crystal oscillator is preferred over a Wien bridge oscillator.
FAQ Have any Doubt ?

A a

B b
Correct Option

Solution :
(b)
Wien Bridge is a audio frequency oscillator in which the audio range can be varied by changing R or C but for a high
frequency operation a crystal oscillator is used.

C c
D d

QUESTION ANALYTICS