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MPSA94: PNP Silicon Planar High Voltage Transistor

This document provides specifications for the MPSA94 PNP silicon planar high voltage transistor. It is not recommended for new designs and designers are instructed to use the ZTX758 transistor instead. Key specifications include supporting collector-emitter voltages up to -400V, a continuous collector current rating of -300mA, and power dissipation of up to 625mW at 25°C. Electrical characteristics include breakdown and saturation voltages as well as static forward current transfer ratios ranging from 40 to 300 depending on collector current levels.

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Fernando Soto
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0% found this document useful (0 votes)
70 views1 page

MPSA94: PNP Silicon Planar High Voltage Transistor

This document provides specifications for the MPSA94 PNP silicon planar high voltage transistor. It is not recommended for new designs and designers are instructed to use the ZTX758 transistor instead. Key specifications include supporting collector-emitter voltages up to -400V, a continuous collector current rating of -300mA, and power dissipation of up to 625mW at 25°C. Electrical characteristics include breakdown and saturation voltages as well as static forward current transfer ratios ranging from 40 to 300 depending on collector current levels.

Uploaded by

Fernando Soto
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Not Recommended for New Design

Please Use ZTX758


PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR MPSA94
ISSUE 2 – MARCH 94
FEATURES
* High voltage

APPLICATIONS
* Telephone dialler circuit
E
B
C

TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -400 V
Collector-Emitter Voltage VCEO -400 V
Emitter-Base Voltage VEBO -6 V
Continuous Collector Current IC -300 mA
Power Dissipation at Tamb =25°C Ptot 625 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).


PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base V(BR)CBO -400 V IC=-100µ A, IE=0
Breakdown Voltage
Collector-Emitter V(BR)CEO -400 V IC=-1mA, IB=0*
Breakdown Voltage
Collector-Emitter V(BR)CES -400 V IC=-100µ A, IE=0
Breakdown Voltage
Emitter-Base V(BR)EBO -6 V IE=-100µ A, IC=0
Breakdown Voltage
Collector Cut-Off ICBO -0.1 µA VCB=-400V, IE=0
Current
Collector Cut-Off ICES -500 nA VCE=-400V
Current
Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V, IC=0
Collector-Emitter VCE(sat) -0.4 V IC=-1mA, IB=-0.1mA*
Saturation Voltage -0.5 IC=-10mA, IB=-1mA*
-0.75 IC=-50mA, IB=-5mA*
Base-Emitter VBE(sat) -0.75 V IC=-10mA, IB=-1mA*
Saturation Voltage
Static Forward Current hFE 40 IC=-1mA, VCE=-10V*
Transfer Ratio 50 300 IC=-10mA, VCE=-10V*
45 IC=-50mA, VCE=-10V*
40 IC=-100mA, VCE=-10V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3-86

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