PNP SILICON PLANAR MEDIUM POWER

ZTX951 HIGH CURRENT TRANSISTOR ZTX951

ISSUE 4 – JUNE 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
* 4 Amps continuous current
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
* Up to 15 Amps peak current
Base-Emitter VBE(on) -850 -1000 mV IC=-4A, VCE=-1V*
* Very low saturation voltage
Turn-On Voltage
* Excellent gain up to 10 Amps
Static Forward hFE 100 200 IC=-10mA, VCE=-1V*
* Spice model available C
Current Transfer Ratio 100 200 300 IC=-1A, VCE=-1V* B
75 120 IC=-4A, VCE=-1V* E
10 25 IC=-10A, VCE=-1V* E-Line
Transition Frequency fT 120 MHz IC=-100mA, VCE=-10V TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
f=50MHz
PARAMETER SYMBOL VALUE UNIT
Output Capacitance Cobo 74 pF VCB=-10V, f=1MHz
Collector-Base Voltage VCBO -100 V
Switching Times ton 82 ns IC=-2A, IB1=-200mA
toff 350 ns IB2=200mA, VCC=-10V Collector-Emitter Voltage VCEO -60 V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Emitter-Base Voltage VEBO -6 V
Peak Pulse Current ICM -15 A
THERMAL CHARACTERISTICS Continuous Collector Current IC -4 A
PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* Ptotp 1.58 W

Thermal Resistance: Junction to Ambient Rth(j-amb) 150 °C/W Power Dissipation at Tamb=25°C Ptot 1.2 W
Junction to Case Rth(j-case) 50 °C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO -100 -140 V IC=-100µA
Voltage
4.0
Collector-Emitter Breakdown V(BR)CER -100 -140 V IC=-1µA, RB ≤1KΩ
Max Power Dissipation - (Watts)

150 D.C.
Thermal Resistance (°C/W)

t1 D=t1/tP Voltag
3.0
Ca Collector-Emitter Breakdown V(BR)CEO -60 -90 V IC=-10mA*
se
te
100 tP Voltage
m D=0.6
2.0 pe Emitter-Base Breakdown V(BR)EBO -6 -8 V IE=-100µA
ra
Amb
tu
re 50
Voltage
ient te
1.0 mpe
ratu
D=0.2
Collector Cut-Off Current ICBO -50 nA VCB=-80V
re D=0.1
D=0.05
-1 µA VCB=-80V, Tamb=100°C
Single Pulse
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current ICER -50 nA VCB=-80V
T -Temperature (°C) Pulse Width (seconds) R ≤1KΩ -1 µA VCB=-80V, Tamb=100°C
Emitter Cut-Off Current IEBO -10 nA VEB=-6V
Derating curve Maximum transient thermal impedance
Collector-Emitter Saturation VCE(sat) -15 -50 mV IC=-100mA, IB=-10mA*
Voltage -60 -100 mV IC=-1A, IB=-100mA*
-120 -160 mV IC=-2A, IB=-200mA*
-220 -300 mV IC=-4A, IB=-400mA*
Base-Emitter VBE(sat) -960 -1100 mV IC=-4A, IB=-400mA*
Saturation Voltage

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 PNP SILICON PLANAR MEDIUM POWER
ZTX951 HIGH CURRENT TRANSISTOR ZTX951
ISSUE 4 – JUNE 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
* 4 Amps continuous current
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
* Up to 15 Amps peak current
Base-Emitter VBE(on) -850 -1000 mV IC=-4A, VCE=-1V*
* Very low saturation voltage
Turn-On Voltage
* Excellent gain up to 10 Amps
Static Forward hFE 100 200 IC=-10mA, VCE=-1V*
* Spice model available C
Current Transfer Ratio 100 200 300 IC=-1A, VCE=-1V* B
75 120 IC=-4A, VCE=-1V* E
10 25 IC=-10A, VCE=-1V* E-Line
Transition Frequency fT 120 MHz IC=-100mA, VCE=-10V TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
f=50MHz
PARAMETER SYMBOL VALUE UNIT
Output Capacitance Cobo 74 pF VCB=-10V, f=1MHz
Collector-Base Voltage VCBO -100 V
Switching Times ton 82 ns IC=-2A, IB1=-200mA
toff 350 ns IB2=200mA, VCC=-10V Collector-Emitter Voltage VCEO -60 V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Emitter-Base Voltage VEBO -6 V
Peak Pulse Current ICM -15 A
THERMAL CHARACTERISTICS Continuous Collector Current IC -4 A
PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* Ptotp 1.58 W

Thermal Resistance: Junction to Ambient Rth(j-amb) 150 °C/W Power Dissipation at Tamb=25°C Ptot 1.2 W
Junction to Case Rth(j-case) 50 °C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO -100 -140 V IC=-100µA
Voltage
4.0
Collector-Emitter Breakdown V(BR)CER -100 -140 V IC=-1µA, RB ≤1KΩ
Max Power Dissipation - (Watts)

150 D.C.
Thermal Resistance (°C/W)

t1 D=t1/tP Voltag
3.0
Ca Collector-Emitter Breakdown V(BR)CEO -60 -90 V IC=-10mA*
se
te
100 tP Voltage
m D=0.6
2.0 pe Emitter-Base Breakdown V(BR)EBO -6 -8 V IE=-100µA
ra
Amb
tu
re 50
Voltage
ient te
1.0 mpe
ratu
D=0.2
Collector Cut-Off Current ICBO -50 nA VCB=-80V
re D=0.1
D=0.05
-1 µA VCB=-80V, Tamb=100°C
Single Pulse
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current ICER -50 nA VCB=-80V
T -Temperature (°C) Pulse Width (seconds) R ≤1KΩ -1 µA VCB=-80V, Tamb=100°C
Emitter Cut-Off Current IEBO -10 nA VEB=-6V
Derating curve Maximum transient thermal impedance
Collector-Emitter Saturation VCE(sat) -15 -50 mV IC=-100mA, IB=-10mA*
Voltage -60 -100 mV IC=-1A, IB=-100mA*
-120 -160 mV IC=-2A, IB=-200mA*
-220 -300 mV IC=-4A, IB=-400mA*
Base-Emitter VBE(sat) -960 -1100 mV IC=-4A, IB=-400mA*
Saturation Voltage

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 ZTX951
TYPICAL CHARACTERISTICS

IC/IB=50 Tamb=25°C -55°C IC/IB=10

1.6 1.6 +25°C
IC/IB=10 +175°C
1.4 1.4
VCE(sat) - (Volts)

VCE(sat) - (Volts)
1.2 1.2
1.0 1.0
0.8 0.8
0.6 0.6
0.4 0.4
0.2 0.2
0 0
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20
IC - Collector Current (Amps) IC - Collector Current (Amps)

VCE(sat) v IC VCE(sat) v IC

+100°C -55°C
1.6 +25°C VCE=1V +25°C IC/IB=10
1.6 +100°C
-55°C 300 +175°C
1.4 1.4
hFE - Normalised Gain

hFE - Typical Gain

VBE(sat) - (Volts)

1.2 1.2
1.0 200 1.0
0.8 0.8
0.6 0.6
100
0.4 0.4
0.2 0.2
0
0.001 0.01 0.1 1 10 20 0
0.001 0.01 0.1 1 10 20
IC - Collector Current (Amps) IC - Collector Current (Amps)

hFE v IC VBE(sat) v IC

Single Pulse Test at Tamb=25°C

100
IC - Collector Current (Amps)

-55°C
1.6 +25°C VCE=1V
+100°C
+175°C
1.4
10
VBE - (Volts)

1.2

1.0
D.C.
0.8 1s
100ms
0.6 10ms
1 1.0ms
0.4 0.1ms

0.2

0
0.001 0.01 0.1 1 10 20 0.1
0.1 1 10 100
IC - Collector Current (Amps) VCE - Collector Voltage (Volts)

VBE(on) v IC Safe Operating Area

3-317
Mouser Electronics

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ZTX951