MEMS PRODUCTS: GAS

SENSORS
BY: JYOTHIS JAYAJITH, EDWIN SUNNY, YATHI SABU, RASHID BIN ZAIN, KEVIN
ZACHARIA, ASHWIN MURALEEDHARAN AND SNEHASIS PRADHAN
GAS SENSORS
Micro-Electro-Mechanical systems(MEMS), an important MEMS product
that has many applications in different fields is a gas sensor.
A gas sensor is based the model of a microsensor, a microsensor converts
a non-electrical physical or chemical quantity into an electrical signal. A
microsensor mainly contains a sensor and a processor. A sensor is made of
different materials that can detect specific quantities. This sensor interact
with the quantity and produce an impulse that is analysed by the
processor and converted into an electrical data.
ADVANTAGES OF GAS SENSORS

• Low power consumption.

• Robust and stable electrical properties.
• Potential for low-cost batch production.
• More rapid response.
• Greater precision.
• The potential for low-cost batch production.
DISADVANTAGES OF GAS SENSORS

• Designing them is a tough task because it includes very much complex

procedures.
• Niche skillset required for designing & developing.
• Farm establishment cost is high.
OTHER GAS SENSORS

• Infrared point (expensive and has smaller range)

• Infrared imaging (cheaper but has limited range)
• Ultrasonic (better response time and range but expensive, bulkier
and heavy maintenance is required)
TYPES OF GAS
SENSORS

• Semiconductor-type
MEMS gas sensor

• Micro resonant gas

sensor
SEMICONDUCTOR-TYPE GAS SENSOR
A semiconductor-type MEMS gas sensor uses a metal oxide surface, metal
oxides that are usually used of a heavy metal or a transition metal. that
interacts with a gas and undergoes certain chemicals changes, these chemical
changes are then used to detect the gas that it senses and identity certain
characteristics
Types of semiconductor-type gas sensors
• METS Dissolved Methane Sensor
• Micro-Oxymax Respirometer
MICRO RESONANT GAS SENSOR

A micro resonant gas sensor is a type of micro resonant sensor, a micro resonant
structure consists of a mechanical structure vibrating(resonator) at its resonant
frequency(a frequency of vibration dependant on the physical parameters of
the vibrating object). These vibrations can be excited by using some form of
drive technique. In this case is the stress caused on the resonator due to the gas.
The difference in the resonant frequency helps to identify the gas that the
sensor is sensing.
A MICRO RESONANT GAS SENSOR
INTRODUCTION

Micro-sensors have a compact structure, a low cost, low power loss, a high response
speed, high accuracy, etc. The micro-resonant sensor outputs frequency signals and is
suitable for the distant range transmission of certain signals such as measurements of
the chemical constituents and pressure inside the gut. The micro-resonant gas sensor is
one type of micro-resonant sensor and is used to detect dangerous and harmful gas. In
a micro-resonant gas sensor, the measurement of the resonator vibration displacements
is necessary. Presently, there are three main types of methods of measuring resonator
vibration displacements.
The first is the piezoresistive method. Here, piezoresistive elements are
integrated into the resonator during fabrication. Resonator bending
displacement is proportional to the change in resistance. The change in
resistance is measured with a Wheatstone bridge at the resonator root. With
this method, octane, carbon monoxide, and several volatile organic gases have
been detected
The second is the optical method, which involves the reflection of a beam of
light off the resonator onto a segmented photodiode or a position-sensitive
detector. A small mirror is attached to a cantilever, and the position of the laser
beam that bounces off this mirror can then be monitored using a position
sensitive photo-detector, which can discern 10–14 m changes in the cantilever
bending
The third is the capacitance method. This method is based on
measuring the capacitance between a conductor on the resonator
and another fixed conductor on the substrate that is separated from
the resonator by a small gap. Changes in the gap due to resonator
displacement result in changes in the capacitance between two
conductor plates. A resonant gas sensor for the detection of low-
power capacitors with a PDMS (polydimethylsiloxane) as a sensitive
layer with a thickness of 2.2 μm was developed and mainly used for
the detection of toluene and octane.
FABRICATION

Here, a micro-resonant gas sensor with nanometer clearance was

fabricated. The fabricating process of the micro-resonant gas sensor
is shown in Figure 1, Figure 2 and Figure 3. The starting materials
were 2 in. <100> 370 µm silicon wafers with double-sided thin
silicon oxide 10,000 ± 300 Å in thickness. Two silicon wafers were
used.
Figure 1: Fabrication process of the first silicon wafer. (a–j) Steps 1–10

Figure 2: Fabrication process of the second silicon wafer. (a–e) Steps 1–5
 Figure 3: Two silicon wafers bonded.
(a) Schematic diagram of cross section; (b) diagram.
MEASURING SYSTEM
Here, one-port electrostatic excitation and capacitive detection was used. The resonator
consisted in both an exciting unit and a detection unit. The exciting signal is

u(t) = usinωt
(1)
where u(t) is the voltage of the exciting signal, u is its amplitude; t is the time; ω is the frequency
of the exciting signal.
Under the above excitation, the electrostatic force between the resonant beam and the base
plate is

Fe=−12u2dCdω=−12u2sin2(ωt)dCdω=cos(2ωt)−14u2dCdω.
MEMS RESONANT GAS SENSORS MANUFACTURE
HOW ARE MEMS RESONANT GAS SENSORS
MANUFACTURED?
The phthalocyanine copper layer is sensitive to ethanol vapor. Phthalocyanine copper has been reported to be able to detect several
types of gases such as alcohol, NH3, and NO2. because the current–voltage characteristics on the phthalocyanine. The copper layer can
be changed when these gases adsorb to the phthalocyanine copper layer. Here, we exploit the adsorption ability of the phthalocyanine
copper layer, but we did not detect changes in current–voltage characteristics. By detecting the natural frequency shift (mass changes of
the micro-resonator), we measured the density of these gases. The fabrication process for the second silicon wafer involves five steps:

• The first step is to remove organic matter from the silicon wafer and then to clean and dry it.
• The second step is to coat one side of the silicon wafer with a positive photoresist 1 µm in thickness.
• The third step is to expose the silicon wafer to ultraviolet light.
• The fourth step is to develop the ultraviolet light on the silicon wafer and then dry the two remaining photoresists, which will be taken
as bearings.

• The fifth step is to deposit an 800 nm layer of Au between the two bearing photoresists by means of lift-off technology.
• Finally, two silicon wafers were bonded together with epoxy resin to obtain the micro-gas sensor with a 200 nm clearance between
the cantilever and the base plate. The 200 nm clearance is the gap between the top wafer and the bottom wafer with a 200-nm-thick
step formed by the 1-µm-thick photoresists and the 800-nm-thick Au layer.
The phthalocyanine copper layer is sensitive to ethanol vapor. Phthalocyanine copper has been reported to be able to
detect several types of gases such as alcohol, NH3, and NO2. because the current–voltage characteristics on the
phthalocyanine. The copper layer can be changed when these gases adsorb to the phthalocyanine copper layer. Here,
we exploit the adsorption ability of the phthalocyanine copper layer, but we did not detect changes in current–voltage
characteristics. By detecting the natural frequency shift (mass changes of the micro-resonator), we measured the density
of these gases. The fabrication process for the second silicon wafer involves five steps:
• The first step is to remove organic matter from the silicon wafer and then to clean and dry it.
• The second step is to coat one side of the silicon wafer with a positive photoresist 1 µm in thickness.
• The third step is to expose the silicon wafer to ultraviolet light.
• The fourth step is to develop the ultraviolet light on the silicon wafer and then dry the two remaining photoresists,
which will be taken as bearings.
• The fifth step is to deposit an 800 nm layer of Au between the two bearing photoresists by means of lift-off
technology.
• Finally, two silicon wafers were bonded together with epoxy resin to obtain the micro-gas sensor with a 200 nm
clearance between the cantilever and the base plate. The 200 nm clearance is the gap between the top wafer and
the bottom wafer with a 200-nm-thick step formed by the 1-µm-thick photoresists and the 800-nm-thick Au layer.
THE SEMICONDUCTOR GAS SENSING TECHNIQUE
Semiconductor gas sensors rely on a gas
coming into contact with a metal oxide
surface and then undergoing either
oxidation or reduction. The absorption or
desorption of the gas on the metal oxide
changes either the conductivity or
resistivity from a known baseline value.
This change in conductivity or resistivity
can be measured with electronic circuitry.
Usually the change in conductivity or
resistivity is a linear and proportional
relationship with gas concentration.
Therefore, a simple calibration equation
can be established between
resistivity/conductivity change and gas
concentration. Semiconductor sensors
work best when they have a large
surface area. Such a sensor can absorb
as much of the target gas as possible
particularly at low concentrations.
ADVANTAGES OF SEMICONDUCTOR SENSORS

• Semiconductor sensors are relatively inexpensive to manufacture due to

their simplicity and scalability.

• Specific sensors can be designed for particular applications. For

example, a sensor can be designed for low concentration applications
whereas an alternative sensor can be designed for high concentration
applications.
LIMITATIONS OF GAS SEMICONDUCTOR SENSORS
• Non-target gases may absorb on the oxide surface and provide false measurements.
Important disrupting gases include ozone, water and volatile organic compounds.
• One of the advantages of semiconductor sensors is their flexibility in sensor design
for specific applications (see above in Advantages section). However, this can also be
a limitation. A user will need to purchase multiple sensors depending on the
application.
• The relationship between R/Ro and CO2 is not necessarily linear leading to issues
with consistent calibration across sensors. Individual calibration of sensors may be
necessary, leading to increased sensor costs associated with resources and labour
time.
• Semiconductor CO2 sensors can also be unreliable at high relative humidity and
varying temperatures.
EXAMPLE OF
SEMICONDUCTOR
GAS SENSORS
The Pro-Oceanus Mini
CH4™ is a compact, low-
cost, lightweight, plug-n-
play methane sensor
designed to provide CH4
measurements for
applications involving
immersion in water, oil, or
water and oil mixtures.
MANUFACTURING OF METAL OXIDE
SEMICONDUCTOR GAS SENSOR
ABSTRACT
• Metal-oxide-semiconductor (MOS) based gas sensors have been
considered a promising candidate for gas detection
• However it needs to be further enhanced to satisfy the higher
requirements for specific applications.
• Excellent selectivity, low power consumption and a fast
response/recovery rate should be fulfilled simultaneously, which
pose great challenges to the MOS-based gas sensors.
STEPS

• SCREENING

• PREPARATION

• INTEGRATION
SCREENING

On the basis of the whole fabrication process of gas

sensors, this review gives a presentation of the
important role of screening and the recent
developments in high throughput screening.
PREPARATION

• The factors influencing the sensing properties of MOSs

involved in material preparation processes were also
discussed in detail.
• It was concluded that the sensing properties of MOSs not
only depend on the morphological, but also rely on the
defect structure and heterointerface.
INTEGRATION

Then the material-sensor integration was also introduced to

maintain the structural stability in the sensor fabrication
process, ensuring the sensing stability of MOS-based gas
sensors.
Finally, the perspectives of the MOS-based gas
sensors in the aspects of fundamental research
and the improvements in the sensing properties
are pointed out.
COMPARING GAS SENSORS
MICRO RESONANT SENSOR
• ADVANTAGES • DISADVANTAGES
• simple structure. • shortcoming is a weak signal output
• Fully silicon thermally actuated caused by a small capacitance
resonators with piezoresistive readout
change.
have been utilized to detect presence of
gasoline vapor in air. Faster and more • Lower sensitivity
sensitive responses are expected to be
achievable using more appropriate
absorbent layers and optimized
resonator designs.
 MODE LOCALIZED RESONANT SENSOR
• ADVANTAGES • DISADVANTAGES
• Improved parametric sensitivity • Requirement for initial tuning
• Common mode of rejection • Lower resolution of amplitude
measurement
CONVENTIONAL SINGLE RESONANT SENSOR
• ADVANTAGES • DISADVANTAGES
• Simple mechanical design • Lower sensitivity
• Quasi digital output • Sensitive to ambient changes.
• High frequency resolution
METAL OXIDE SEMICONDUCTOR SENSOR
• ADVANTAGES:
• DISADVANTAGES:
• Inexpensive compared to other sensing
technologies • Non-target gases may absorb on the oxide
• Robust, lightweight, long lasting surface and provide false measurements.
• Benefit from high material sensitivity and quick • A user will need to purchase multiple sensors
response times depending on the application
• They have been used extensively to measure and • It is susceptible to contaminants and changes
monitor trace amounts of environmentally
important gases such as carbon monoxide and
due to environment conditions.
nitrogen dioxide.
• Because the sensor must come in contact with the • Non-linear response affects sensor
gas to detect it, semiconductor sensors work over complexity.
a smaller distance than infrared point or
ultrasonic detectors.
THANK YOU