MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT

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Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
3
2 • Solder dip 275 °C max.10 s, per JESD 22-B106
1
• Material categorization: for definitions of compliance
TO-247AD (TO-3P) please see www.vishay.com/doc?99912
PIN 1 PIN 2

PIN 3 CASE
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.

PRIMARY CHARACTERISTICS MECHANICAL DATA

IF(AV) 40 A Case: TO-247AD (TO-3P)
VRRM 35 V, 45 V, 50 V, 60 V Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IFSM 400 A
Terminals: Matte tin plated leads, solderable per
VF 0.60 V, 0.62 V
J-STD-002 and JESD 22-B102
TJ max. 150 °C E3 suffix meets JESD 201 class 1A whisker test
Package TO-247AD (TO-3P) Polarity: As marked
Diode variations Common cathode Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V
Maximum working peak reverse voltage VRWM 35 45 50 60 V
Maximum DC blocking voltage VDC 35 45 50 60 V
Maximum average forward rectified current TC = 125 °C IF(AV) 40 A
Peak forward surge current 8.3 ms single half
IFSM 400 A
sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode IRRM (1) 2.0 1.0 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction temperature range TJ -65 to +150 °C
Storage temperature range TSTG -65 to +175 °C
Note
(1) 2.0 μs pulse width, f = 1.0 kHz

Revision: 17-Aug-15 1 Document Number: 88679

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT
www.vishay.com
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
IF = 20 A TJ = 25 °C 0.70 0.72
Maximum instantaneous forward IF = 20 A TJ = 125 °C 0.60 0.62
VF (1) V
voltage per diode IF = 40 A TJ = 25 °C 0.80 -
IF = 40 A TJ = 125 °C 0.75 -
Maximum instantaneous reverse TJ = 25 °C 1.0
current at rated DC blocking voltage IR (1) mA
per diode TJ = 125 °C 100
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Thermal resistance, junction to case
RJC 1.2 °C/W
per diode

ORDERING INFORMATION (Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD MBR4045PT-E3/45 6.13 45 30/tube Tube

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

50 400
TJ = TJ Max.
Resistive or Inductive Load 8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
Average Forward Current (A)

40

300
30

20
200

10

0 100
0 50 100 150 1 10 100
Case Temperature (°C) Number of Cycles at 60 Hz

Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode

Revision: 17-Aug-15 2 Document Number: 88679

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT
www.vishay.com
Vishay General Semiconductor

100 10 000
TJ = 25 °C
Instantaneous Forward Current (A)

f = 1.0 MHz
Vsig = 50 mVp-p

Junction Capacitance (pF)

Pulse Width = 300 µs
10 TJ = 150 °C
1 % Duty Cycle

TJ = 25 °C
1 1000

0.1

MBR4035PT, MBR4045PT MBR4035PT, MBR4045PT

MBR4050PT, MBR4060PT MBR4050PT, MBR4060PT
0.01 100
0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode

100 100
MBR4035PT, MBR4045PT

Transient Thermal Impedance (°C/W)

Instantaneous Reverse Current (mA)

MBR4050PT, MBR4060PT
10
TJ = 125 °C
10
1 TJ = 75 °C

0.1
TJ = 25 °C 1

0.01

0.001 0.1
0 20 40 60 80 100 0.01 0.1 1 10 100
Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s)

Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-247AD (TO-3P)
0.245 (6.2) 0.645 (16.4) 0.203 (5.16)
0.225 (5.7) 0.625 (15.9) 0.193 (4.90)
0.323 (8.2) 0.078 (1.98) REF.
0.313 (7.9)
30° 10

0.170
(4.3)
10° TYP.
0.840 (21.3) Both Sides
0.142 (3.6)
0.820 (20.8)
0.138 (3.5)

1 2 3 1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.118 (3.0)
0.127 (3.22)
0.160 (4.1) 0.108 (2.7)
0.117 (2.97)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)

0.225 (5.7) 0.048 (1.22) 0.030 (0.76)

0.205 (5.2) 0.044 (1.12) 0.020 (0.51)

PIN 1 PIN 2

PIN 3 CASE

Revision: 17-Aug-15 3 Document Number: 88679

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17 1 Document Number: 91000