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Isc N-Channel MOSFET Transistor IRFB4227 IIRFB4227: INCHANGE Semiconductor

This document provides specifications for the IRFB4227 N-channel MOSFET transistor from INCHANGE Semiconductor. Some key features include a maximum drain-source on-resistance of 24mΩ, enhancement mode operation, fast switching speed, and 100% avalanche testing. The maximum ratings include a drain-source voltage of 200V, drain current of 65A continuous and 260A single pulsed, and a maximum operating junction temperature of 175°C. Thermal characteristics include a channel-to-case thermal resistance of 0.45°C/W and channel-to-ambient thermal resistance of 62°C/W.

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69 views2 pages

Isc N-Channel MOSFET Transistor IRFB4227 IIRFB4227: INCHANGE Semiconductor

This document provides specifications for the IRFB4227 N-channel MOSFET transistor from INCHANGE Semiconductor. Some key features include a maximum drain-source on-resistance of 24mΩ, enhancement mode operation, fast switching speed, and 100% avalanche testing. The maximum ratings include a drain-source voltage of 200V, drain current of 65A continuous and 260A single pulsed, and a maximum operating junction temperature of 175°C. Thermal characteristics include a channel-to-case thermal resistance of 0.45°C/W and channel-to-ambient thermal resistance of 62°C/W.

Uploaded by

Roberto Carlos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFB4227，IIRFB4227

·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤24mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·DESCRITION
·175℃ operating junction temperature and high repetitive peak
current capability

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 200 V

VGS Gate-Source Voltage ±30 V

ID Drain Current-Continuous 65 A

IDM Drain Current-Single Pulsed 260 A

PD Total Dissipation @TC=25℃ 330 W

Tj Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature -40~175 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Channel-to-case thermal resistance


Rth(ch-c) 0.45 ℃/W

Channel-to-ambient thermal resistance


Rth(ch-a) 62 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFB4227，IIRFB4227

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 200 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA 3 5 V

RDS(on) Drain-Source On-Resistance VGS=10V; ID=46A 24 mΩ

IGSS Gate-Source Leakage Current VGS= ±20V ±0.1 μA

IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V 20 μA

VSD Diode forward voltage Is=46A; VGS = 0V 1.3 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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