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Isc N-Channel MOSFET Transistor IRLB4132: INCHANGE Semiconductor

This document provides information on the IRLB4132 N-channel MOSFET transistor from INCHANGE Semiconductor. It has low gate drive requirements, is easy to drive, and is 100% avalanche tested for robust and reliable performance. Its applications include switching applications and low voltage power tools. The document lists the transistor's maximum ratings, thermal characteristics, and electrical characteristics.

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Brahim Salah
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181 views2 pages

Isc N-Channel MOSFET Transistor IRLB4132: INCHANGE Semiconductor

This document provides information on the IRLB4132 N-channel MOSFET transistor from INCHANGE Semiconductor. It has low gate drive requirements, is easy to drive, and is 100% avalanche tested for robust and reliable performance. Its applications include switching applications and low voltage power tools. The document lists the transistor's maximum ratings, thermal characteristics, and electrical characteristics.

Uploaded by

Brahim Salah
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRLB4132

·FEATURES
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·APPLICATIONS
·Switching applications
·Low voltage power tools

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 30 V

VGSS Gate-Source Voltage ±20 V

Drain Current-Continuous@TC=25℃ 150


ID A
TC=100℃ 100

IDM Drain Current-Single Pulsed 620 A

Total Dissipation @TC=25℃ 140


PD W
TC=100℃ 68

Tj Operating Junction Temperature -55~175 ℃

Tstg Storage Temperature -55~175 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth(ch-c) Channel-to-case thermal resistance 1.11 ℃/W

Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRLB4132

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 30 V

VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.1mA 1.35 2.35 V

VGS= 10V; ID=40A 2.5 3.5


RDS(on) Drain-Source On-Resistance mΩ
VGS= 4.5V; ID=32A 3.5 4.5

IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ±0.1 μA

VDS= 24V; VGS= 0V@Tc=25℃ 1


IDSS Drain-Source Leakage Current μA
Tc=125℃ 100

VSDF Diode forward voltage ISD=32A, VGS = 0 V 1.0 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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