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2SC2001

This document provides specifications for the 2SC2001 NPN plastic encapsulated transistor. Key specifications include: - Maximum ratings of 30V collector-base voltage, 25V collector-emitter voltage, and 0.7A continuous collector current. - Electrical characteristics including a current gain of 90-400, collector-emitter saturation voltage below 0.6V, and transition frequency above 50MHz. - The transistor comes in different hFE classifications and is RoHS compliant and halogen/lead-free.

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Antony Burgers
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83 views2 pages

2SC2001

This document provides specifications for the 2SC2001 NPN plastic encapsulated transistor. Key specifications include: - Maximum ratings of 30V collector-base voltage, 25V collector-emitter voltage, and 0.7A continuous collector current. - Electrical characteristics including a current gain of 90-400, collector-emitter saturation voltage below 0.6V, and transition frequency above 50MHz. - The transistor comes in different hFE classifications and is RoHS compliant and halogen/lead-free.

Uploaded by

Antony Burgers
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SC2001

0.7 A , 30 V
Elektronische Bauelemente NPN Plastic Encapsulated Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen & lead-free

TO-92
FEATURES
 High hFE and low VCE(sat) G H
hFE(IC=100mA)：200(Typ)
VCE(sat)(700mA)：0.2V(Typ)
Emitter
J Collector
A D Base
CLASSIFICATION OF hFE
Product-Rank 2SC2001-M 2SC2001-L 2SC2001-K B REF.
Millimeter
Min. Max.
A 4.40 4.70
Range 90~180 135~270 200~400 K B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
E C F F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76

Collector



Base


Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)


Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 30 V
Collector to Emitter Voltage VCEO 25 V
Emitter to Base Voltage VEBO 5 V
Collector Current - Continuous IC 0.7 A
Collector Power Dissipation PC 0.6 W
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)


Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=100μA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=10mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100μA, IC=0
Collector Cut – Off Current ICBO - - 0.1 μA VCB=30V, IE=0
Collector Cut – Off Current ICEO - - 0.1 μA VCE=20V, IB=0
Emitter Cut – Off Current IEBO - - 0.1 μA VEB=5V, IC=0
DC Current Gain hFE 90 - 400 VCE=1V, IC=100mA
Collector to Emitter Saturation Voltage VCE(sat) - - 0.6 V IC=700mA, IB=70mA
Base to Emitter voltage VBE(sat) - - 1.2 V IC=700mA, IB=70mA
Transition Frequency fT 50 - - MHz VCE=6V, IC=10mA, f=30MHz

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

17-Feb-2011 Rev. A Page 1 of 2


2SC2001
0.7 A , 30 V
Elektronische Bauelemente NPN Plastic Encapsulated Transistor

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

17-Feb-2011 Rev. A Page 2 of 2

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