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Features TO-92: 0.8A, 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente

This document provides specifications for an NPN plastic-encapsulated transistor, the KTC3203. It is a complementary transistor to the KTA1271 with an operating voltage of 0.8A and 35V. It comes in ROHS compliant and halogen/lead-free versions. The transistor has a TO-92 package and is classified based on its hFE range of either 100-200 or 160-320. Absolute maximum ratings and electrical characteristics are provided, including collector current, power dissipation, breakdown voltages, gain, and more.

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64 views1 page

Features TO-92: 0.8A, 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente

This document provides specifications for an NPN plastic-encapsulated transistor, the KTC3203. It is a complementary transistor to the KTA1271 with an operating voltage of 0.8A and 35V. It comes in ROHS compliant and halogen/lead-free versions. The transistor has a TO-92 package and is classified based on its hFE range of either 100-200 or 160-320. Absolute maximum ratings and electrical characteristics are provided, including collector current, power dissipation, breakdown voltages, gain, and more.

Uploaded by

diego tigo155
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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KTC3203

0.8A , 35V
Elektronische Bauelemente NPN Plastic-Encapsulated Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen & lead-free

FEATURES TO-92
 Complementary to KTA1271

CLASSIFICATION OF hFE (1)


Product-Rank KTC3203-O KTC3203-Y

Range 100~200 160~320

1Emitter
2Collector
3Base
Collector
2

Millimeter Millimeter
REF. REF.
3 Min. Max. Min. Max.
Base A 4.40 4.70 F 0.30 0.51
B 4.30 4.70 G 1.27 TYP.
C 12.70 - H 1.10 1.40
1 D 3.30 3.81 J 2.42 2.66
E 0.36 0.56 K 0.36 0.76
Emitter

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)


Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 35 V
Collector to Emitter Voltage VCEO 30 V
Emitter to Base Voltage VEBO 5 V
Collector Current - Continuous IC 800 mA
Collector Power Dissipation PC 625 mW
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)


Parameter Symbol Min. Typ. Max. Unit Test Condition
Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=0.1mA, IB=0
Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=10mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=0.1mA, IC=0
Collector Cut – Off Current ICBO - - 0.1 µA VCB=35V, IE=0
Collector Cut – Off Current ICEO - - 0.2 µA VCE=25V, IB=0
Emitter Cut – Off Current IEBO - - 0.1 µA VEB=5V, IC=0
hFE (1) 100 - 320 VCE=1V, IC=100mA
DC Current Gain
hFE (2) 35 - - VCE=1V, IC=700mA
Collector to Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=500mA, IB=20mA
Base to Emitter Voltage VBE - - 0.8 V VCE=1V, IC=10mA
Collector Output Capacitance Cob - 13 - pF VCB=10V, IE=0, f=1MHz
Transition Frequency fT - 120 - MHz VCE=5V, IC=10mA

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Mar-2012 Rev. A Page 1 of 1

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