ECE GATE-2017 Paper 4-FEB-2017 Afternoon Session-Updated
ECE GATE-2017 Paper 4-FEB-2017 Afternoon Session-Updated
GATE-2017 ECE-SET-2
GA Digital Circuits
15% 9%
Network Theory Engineering
6% Mathematics
14%
Analog Circuits
7% Signals & Systems
8%
Electromagnetic
Theory
8% Control Systems
9%
Communications Electronic Device
11% Circuits
13%
ECE ANALYSIS-2017_5-Feb_Afternoon
Level of Total
SUBJECT Ques. No. Topics Asked in Paper(Memory Based)
Toughness Marks
Engineering 1 Marks:4 Complex variable (Residue, Complex integral),
Easy 14
Mathematics 2 Marks:5 Calculus (vector calculus)
1 Marks:2
Network Theory Steady stat analysis, Transient, R-L-C circuit Tough 6
2 Marks:2
1 Marks:3
Analog Circuits Op-amp, Diode circuit, BJT Medium 7
2 Marks:2
1 Marks:3
Digital Circuits Adder, FSM, Mux Medium 9
2 Marks:3
1 Marks:3
Communications Channel capacity, PCM, Sampling Tough 11
2 Marks:4
Electromagnetic 1 Marks:2
Oblique insistence, Electrostatic, Waveguides Medium 8
Theory 2 Marks:3
80% of the problems are based on previous year problem. Few question of Mechanical
Faculty Feedback 2017 exam is matching with EC 2017 paper and few similar to previous years
Mathematics questions. Overall question paper was easy.
2. The ninth and the tenth of this month are Monday and Tuesday ________
(A) figuratively (C) respectively
(B) retrospectively (D) rightfully
[Ans. C]
‘Respectively’ means in the same order as the people or things already mentioned.
3. 500 students are taking one or more courses out of chemistry, physics and Mathematics.
Registration records indicate course enrolment as follows: chemistry (329), physics (186),
Mathematics (295), chemistry and physics (83), chemistry and Mathematics (217), and
physics and Mathematics (63), How many students are taking all 3 subjects
(A) 37 (C) 47
(B) 43 (D) 53
[Ans. D]
Chemistry = C, physics = P and
Mathematics = M
n(CUPUM) = 500, n(C) = 329, n(P) = 186
n(M) = 295, n(C ∩ P) = 83, n(C ∩ M) = 217
and n(P ∩ M) = 63
n (CUPUM) = n(C) + n(P) + n(M)(C ∩ P) − n(C ∩ M) − n(P ∩ M) + n(P ∩ C ∩ M)
500 = 329 + 186 + 295– 83– 217– 36 + n(C ∩ P ∩ M)
500 = 810 − 363 + n(C ∩ P ∩ M)
∴ n(C ∩ P ∩ M) = 500 − 447 = 53
5. Fatima starts form point P, goes North for 3km, and then East for 4 km to reach point Q. She
then turns to face point P and goes 15km in that direction. She then goes North for 6km. How
far is she from point P, and in which direction should she go to reach point P?
(A) 8 km, East (C) 6 km, East
(B) 12 km, North (D) 10 km, North
[Ans. A]
From the given data, the following diagram is possible
4 km
Q
3 km 5 km
x
P
6 km
10 km
6. “If you are looking for a history of India, or for an account of the rise and fall of the British Raj,
or for the reason of the cleaving of the subcontinent into two mutually antagonistic parts and
the effects this mutilation will have in the respective sections, and ultimately on Asia, you will
not find it in these pages; for though I have spent a lifetime in the country. I lived too near the
seat of events, and was too intimately associated with the actors, to get the perspective
needed for the impartial recording of these matters”.
Which of the following statements best reflects the author’s opinion?
(A) An intimate association does not allow for the necessary perspective
(B) Matters are recorded with an impartial perspective
(C) An intimate association offers an impartial perspective
(D) Actors are typically associated with the impartial recording of matters.
[Ans. A]
7. The number of 3-digit numbers such that the digit 1 is never to the immediate right of 2 is
(A) 781 (C) 881
(B) 791 (D) 891
[Ans. C]
Total number of three digit numbers possible are 9×10 ×10 = 900
Number of possibilities for digit ‘1’ to be immediate right of digit ‘2’ are
2 1 x
1 × 1 × 10 = 10
x 2 1
9 × 1 × 1 =9
= 19
So, number of possibilities such that the digit ‘1’ is never to the immediate right of ‘2’ are
900 − 19 = 881
8. Each of P, Q, R, S, W, X, Y and Z has been married at most once. X and Y married and have two
children P and Q .Z is the grandfather of the daughter S of P. Further, Z and W are married and
are parents of R. Which one of the following must necessarily be FALSE?
(A) X is the mother in law of R (C) P is a son of X and Y
(B) P and R not married to each other (D) Q cannot be married to R
[Ans. B]
Z W X Y
R P Q
S
Where,
→ Male
→ Female
→ Sing for marriage
From diagram P and R are married to each other
9. A contour line joins locations having the same height above the mean sea level. The following
is a contour plot of a geographical region.
R
425 550
450
575 575
Q P S
550
T 500
500 475
0 1 2 km
Contour lines are shown at 25m intervals in this spot. Which of the following is the steepest
path leaving from P?
(A) P to Q (C) P to S
(B) P to R (D) P to T
[Ans. B]
Form the given contour lines and Locations
The path from P to Q = 575 to 500 = 75 m deep
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GATE-2017 ECE-SET-2
10. 1200 men and 500 women can build a bridge in 2 weeks. 900 men and 250 women will take 3
weeks to build the same bridge. How many men will be needed to build the bridge in one
week?
(A) 3000 (C) 3600
(B) 3300 (D) 3900
[Ans. C]
Let a man can build the bridge = x weeks
A woman can build the bridge = y weeks
From the given data,
1200 500 1
+ = …..①
x y 2
900 250 1
+ = …..②
x y 3
By solving equation ① and ②, x = 3600
∴ A man can build the bridge in 3600 weeks
Section: Technical
1. The smaller angle (in degrees) between the planes x + y + z = 1 and 2x – y + 2z = 0 is ________
[Ans. *] Range: 54.0 to 55.0
Angle between two planes
a1 x + b1 y + c1 z = d1 and a2 x + b2 y + c2 z = d2 is given by
|a1 a2 + b1 b2 + c1 c2 |
cos θ =
√a21 + b12 + c12 √a22 + b22 + c22
Now, the angle between x + y + z = 1 and 2x − y + 2z = 0 is
2−1+2 3
cos θ = =
√1 + 1 + 1√4 + 1 + 4 3√3
1
θ = cos−1 ( ) = 54.73°
√3
2. A sinusoidal message signal is converted to a PCM signal using a uniform quantizer. The
required signal to quantization noise ratio (SQNR) at the output of the quantizer is 40dB. The
minimum number of bits per sample needed to achieve the desired SQNR is________
[Ans. *] Range: 7 to 7
The signal to Noise ratio in a uniform Quantizer is
SNR = [ 1.8 + 6n ] ≥ 40 dB
6n ≥ 40 − 1.8
≥ 38.2
38.2
n≥
6
≥ 6.36
So nmin = (integer) = 7
3. In the circuit shown, V is a sinusoidal voltage source. The current I is in phase with voltage V.
Amplitude of voltage across the capcitor
The ratio is _________
Amplitude ofvoltage acrros the resistor
5Ω 5H I
575
~ V 5F
2 km
[Ans. *] Range: 0.19 to 0.21
Given that V and I are in phase
⇒ Circuit is at resonance
⇒ VC = QV∠ − 90°
VR = V
|VC | QV 1 L
→ = =Q= √
|VR | V R C
1 5
= √ = 0.2
5 5
4. Consider the circuit shown in figure. Assume base to emitter voltage VBE = 0.8V and common
base current gain (α) of transistor is unity.
+18 V
44 kΩ 4 kΩ
16 kΩ 2 kΩ
The value of the collectors to emitter voltage VCE (in volt) is _________
[Ans. *] Range: 5.5 to 6.5
α = 1 ⇒ β ≈ ∞ ⇒ IB = 0
16 16
VB = 18 × = 18 × = 4.8 V
16 + 44 60
VE = 4.8 − 0.8 = 4V
4
IE = = 2 mA
2k
IC = IE = 2 mA
VC = 18 − (4 k × 2 m) = 10 V
VCE = 10 − 4 = 6 V
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GATE-2017 ECE-SET-2
RA
R eq RB RC
X(s) +− + Y(s)
G(s) = 2
+
8. The output V0 of the diode circuit shown in figure is connected to an averaging DC voltmeter.
The reading on the DC voltmeter in volts, neglecting the voltage drop across the diode,
is_________
+
10 sin ωt
f = 50 Hz
~ 1 kΩ Vo
−
[Ans. *] Range: 3.15 to 3.21
+
+ 10
−
Vo Vo,Avg = = 3.18 V
π
−
9. The input x(t) and the output y(t) of a continuous time system are related as
t
y(t) = ∫ x(u)du . The system is
t−T
(A) Linear and time variant (C) non linear and time variant
(B) linear and time invariant (D) nonlinear and time invariant
[Ans. B]
t
y(t) = ∫ x(u)du
t−T
The system is linear, it satisfied both superposition and scaling property.
t
y(t) = ∫ x(u − τ)du
t−T
u−τ=λ
du = dλ
t−τ
y1 (t) = ∫ x(λ)dλ … … … . . ①
t−T−τ
t−τ
y(t − τ) = ∫ x(u)du … … … . ②
t−T−τ
y1 (t) = y(t − τ)
So, Time invarient
11. Consider an n-
and oxide capacitance per unit area Cox . If gate-to-source voltage VGS = 0.7V, drain-to-source
voltage VDS = 0.1V, (μn Cox ) = 100 μA/V 2 , threshold voltage VTH = 0.3V and (W/L) = 50, then
the transconductance g m (in mA/V) is
[Ans. *]Range: 0.45 to 0.55
VGS = 0.7
VDS = 0.1; VTH = 0.3V
VDS < VGS = VTH
0.1 < 0.7 − 0.3
0.1 < 0.4 ⇒ TRIODE
W 1 2
ID = μn Cox [(VGS − VT )VDS − VDS ]
L 2
∂IG W
gm = = μn Cox [VDS ]
∂VGS L
= 100 × 10−6 × 50 × 0.1
= 0.5 × 10−3
= 0.5 mA/V
12. An LTI system with unit sample response h(n) = 5δ[n] − 7δ[n − 1] + 7δ[n − 3] − 5δ[n − 4] is a
(A) low pass filter (C) band pass filter
(B) high pass filter (D) band stop filter
[Ans. C]
h(n) = 5δ(n) − 7δ(n − 1) + 7δ(n − 3) − 5δ(n − 4)
In frequency domain
H(ejω ) = 5 − 7e−jω + 7e−j3ω − 5e−j4ω
⇒ H(ejω ) = 5e−j2ω (ej2ω − e−j2ω ) − 7e−j2ω (e+jω − e−jω )
= 5e−j2ω[2j sin(2ω)] − 7e−j2ω [2j sin ω]
= e−j2ω [10 j sin 2ω − 14 j sin ω]
ω H(ejω ) |H(ejω )|
0 0 0
π⁄2 14j 14
π 0 0
It is a Band pass filter.
13. Which one of the following graphs shows the Shannon capacity (channel capacity) in bits of a
memory-less binary symmetric channel with crossover probability p?
(A) (C)
1 1
Capacity
Capacity
P P
0 1 0 1
(B) (D)
1 1
Capacity
Capacity
P P
0 1 0 1
[Ans. C]
The channel capacity of a BSC channel is
C = 1 + Plog 2 P + (1– P) log 2 (1– P)
When,
P=0⇒C=1
P = 1/2 ⇒ C = 0
P=1⇒C=1
Channel capacity of a BSC
1
Capacity
0 1/2 1
14. In a DRAM,
(A) Periodic refreshing is not required
(B) information is stored in a capacitor
(C) information is stored in a latch
(D) both read and write operations can be performed simultaneously
[Ans. B]
In DRAM
15. A two wire transmission line terminates in a television set. The VSWR measured on the line is
5.8. The percentage of power that is reflected from the television set is________
[Ans. *] Range: 48.0 to 51.0
S = 5.8
S − 1 4.8
|Γ| = = = 0.705
S + 1 6.8
% of reflected power = |Γ 2 | × 100 = (0.705)2 × 100 = 49.82%
16. An n-channel enhancement mode MOSFET is biased at VGS > VTH and VDS > (VGS − VTH ),
where VGS is the gate to source voltage, VDS is the drain to source voltage and VTH is the
threshold voltage. Considering channel length modulation effect to be significant, the MOSFET
behaves as a ______
(A) Voltage source with zero output impedance
(B) Voltage source with non-zero output impedance
(C) Current source with finite output impedance
(D) Current source with infinite output impedance
[Ans. C]
If the effect of channel length modulation is considered then the output resistance is finite
value.
1 −1 0 0 0
0 1 −1 0 0
A= 0 0 1 −1 0
0 −1 0 0 1
[0 0 0 1 −1]
R4 → R4 + R2
1 −1 0 0 0
0 1 −1 0 0
A= 0 0 1 −1 0
0 0 −1 0 1
[0 0 0 1 −1]
R4 → R4 + R3
1 −1 0 0 0
0 1 −1 0 0
A= 0 0 1 −1 0
0 0 0 −1 1
[0 0 0 1 −1]
R5 → R5 + R4
1 −1 0 0 0
0 1 −1 0 0
A= 0 0 1 −1 0
0 0 0 −1 1
[0 0 0 0 0]
∴ ρ(A) = 4
18. In the figure, D1 is a real silicon pn junction diode with a drop of 0.7V under forward bias
condition and D2 is a zener diode with breakdown voltage of −6.8V. The input Vin (t) is a
periodic square wave of period T, whose one period is shown in the figure.
Vin (t) 10 μF
+14 V
D1
10 Ω
T Vout (t)
0 D2
t(seconds)
−14 V
Assuming 10 τ ≪ T. Where τ is the time constant of the circuit, the maximum and minimum
values of the output waveform are respectively?
(A) 7.5V and −20.5V (C) 7.5 V and −21.2V
(B) 6.1V and −21.9V (D) 6.1V and −22.6V
[Ans. A]
Vo
7.5
t
T 2T
−20.5
+ve cycle:
6.5 V V0 = 7.5
+ −
+ +
0.7
14 V −
+
6.8 V
− −
− ve cycle:
6.5 V
+ −
+
14 V R V0(min) = −20.5 V
20. Two conducting spheres S1 and S2 of radii a and b (b>a) respectively, are placed far apart
and connected by a long, thin conducting wire, as shown in the figure.
S2
S1
Wire
Radius a
Radius b
For some charge placed on this structure, the potential and surface electric field on S1 are Va
and Ea , and that on S2 are Vband Eb respectively. Then, which of the following is CORRECT?
(A) Va = Vb and Ea < Eb (C) Va = Vb and Ea > Eb
(B) Va > Vb and Ea > Eb (D) Va > Vb and Ea = Eb
[Ans. C]
S2 S1
Q2
a Q
1
b
When the two spheres are connected by a conducting wire, charge will flow from one to
another until their potentials are equal.
Va = Vb
1 Q1 1 Q2
=
4πϵ a 4πϵ b
Q1 a
=
Q2 b
1 Q1
Ea =
4πϵ a2
1 Q2
Eb =
4πϵ b 2
Ea Q1 b2
∴ =
Eb Q 2 a2
Ea b
=
Eb a
So, Va = Vb
And Ea > Eb
1/2
0 1 2
(Mean)
Figure: pdf of V
X(t) = U + VT
E[U] = 0, E[V] = 1
E[X(t)] = E[U + Vt]
= E[U] + E[V]t
=0+1×t=t
E[X(t)]at t=2 = 2
22. For the circuit shown in figure, P and Q are the inputs and Y is the output.
PMOS
Y
P NMOS
Q
Where u(t)denotes the unit step function. The value of lim |√x12 (t) + x22 (t)| is________
t→∞
0
ZIR = eAt x(0) = [ ]
0
−1 [ϕ(s)BU (S)]
ZSR = L
s 0 s+9 0
(SI − A) = [ ] , Adj (SI − A) [ ]
0 s+9 0 s
1
Adj (SI − A) 0
ϕ(s) = (SI − A)−1 = = [s ]
|SI − A| 1
0
s+9
1
0 0
0 1 0
ZSR = L−1 [ s ] [ ] [ ] = L−1 [ 45 ] = [ ]
1 45 s 5(1 − e−9t )
0 s(s + 9)
[ s+9 ]
x1 (t)0, x2 (t) = 5(1 − e−9t )
25. An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias
across the base-collector junction is increased. Then
(A) the effective base width increases and common-emitter current gain increases
(B) the effective base width increases and common emitter current gain decreases
(C) the effective base width decreases and common-emitter current gain increases
(D) the effective base width decreases and common-emitter current gain decreases
[Ans. C]
If RB across the Base –collector junction increases
⇒ Effective Base width decreases
So re-combinations in Base decreases
So α increases, so β increases
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GATE-2017 ECE-SET-2
26. Figure 1 shows a 4-bit ripple carry adder realized using full adders and figure 2 shows the circuit
of a full adder (FA). The propagation delay of the XOR, AND and OR gates in figure 2 are 20ns,
15ns and 10ns, respectively. Assume all the inputs to the 4-bit adder are initially reset to 0.
Y3 X 3 Y2 X 2 Y1 X1 Y0 X 0
Z4 Z3 Z2 Z1 Z0
FA FA FA FA
S3 S2 S1 S0
Figure I
Xn
Yn Sn
Zn+1
Zn
Figure II
At t = 0, the inputs to the 4-bit adder are changed to X 3 X2 X1 X0 = 1100, Y3 Y2 Y1 Y0 = 0100 and
Z0 = 1. The output of the ripple carry adder will be stable at t (in ns) = _________
[Ans. *] Range: 70.0 to 70.0
Y3 X 3 Y2 X 2 Y1 X1 Y0 X 0
Z4 Z3 Z2 Z1 Z0
FA FA FA FA
S3 S2 S1 S0
Given inputs
1 1 0 0
0 1 0 0
Z4 Z3 Z2 Z1 1
(1) (1) (0) (0)
0 0 0 1
Since carry = 0 for FA1 and FA2
t = t z3 + t AND + t OR
t z3 = time taken to produce carry 20 + 10 + 15 = 45 ns
t = 45 + 15 + 10 = 70 ns
FA1 ⇒ t S0 = 40 ns, t z1 = 45 ns
FA2 ⇒ Since carry z1 = 0
⇒ no need to wait for carry to come, so it is executed in parallel with FA1
⇒ t s1 = 40 ns, t z2 = 45 ns
FA3 ⇒ Since carry z2 = 0 ⇒ Same process
⇒ t s2 = 40 ns, t z3 = 45 ns
FA4 ⇒ Since carry z3 = 1 ⇒ it has to wait for carry to come
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GATE-2017 ECE-SET-2
So S3 = 45 + 20 = 65 ns
Z4 = 45 + 15 + 10 = 70 ns
27. Passengers try repeatedly to get a seat reservation in any train running between two stations
until they are successful. If there is 40% chance of getting reservation in any attempt by a
passenger, then the average number of attempts that passengers need to make to get a seat
reserved is
[Ans. *] Range: 2.4 to 2.6
Let X = Number of attempts required to get seat reserved
X 1 2 3 4 …
2 3 2 2 3
3 2 3 2
P(x) ( )( ) ( ) ( ) ( ) ( ) …
5 5 5 2 5 5 5
2 3 2 3 2 2
∴ E(x) = 1 × + 2 ( × ) + 3 [( ) × ( )] +. … … ..
5 5 5 2 5
2 3 3 2
= {1 + 2 ( ) + 3 ( ) +. … … . . }
5 5 5
2 3 −2
= {1 − }
5 5
2 2 −2 2 5 2
= ( ) = ×( )
5 5 5 2
= 2.5
28. Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is
double of T1. Both the transistors are biased in the saturation region of operation, but the gate
overdrive voltage (VGS VTH ) of T2 is double that of T1, where VGS and VTH are the gate-to
source voltage and threshold voltage of the transistors, respectively. If the drain current and
transconducatance of T1 are ID1 and g m1 respectively; the corresponding values of these two
parameters for T2 are
(A) 8ID1 and 2gm1 (C) 4ID1 and 4gm1
(B) 8ID1 and 4gm1 (D) 4ID1 and 2gm1
[Ans. B]
W2 = 2W1
VGS2 − VTH = 2(VGS1 − VTH )
ID ∝ W(VGS − VTH )2
ID2
= 2 × 22 = 8
ID1
ID2 = 8ID1
g m ∝ W(VGS − VTH )
g m2
=2×2=4
g m1
g m2 = 4g m1
29. Consider a binary memoryless channel characterized by the transition probability diagram
shown in figure.
0.25
0 0
0.25
0.25
1 1
0.75
The channel is
(A) lossless (C) useless
(B) noiseless (D) deterministic
[Ans. C]
0.25
x1 y1
0.25
0.25
x2 y2
0.75
Channel matrix:
Y y1 y2
P( ) = x 0.25 0.75 1/4 3/4
1
[ ]=[ ]
X x2 0.25 0.75 1/4 3/4
1
Assume P(x1 ) = P(x2 ) =
2
1/8 3/8
P(X, Y) = [ ]
1/8 3/8
1 3
P(y1 ) = , P(y2 ) =
4 4
X 1/2 1/2
P( ) = [ ]
Y 1/2 1/2
(A) Losseless: [If H(X⁄Y) = 0]
X 1 3 1 3
H ( ) = log 2 + log 2 + log 2 + log 2
Y 8 8 8 8
=1≠0
∴ Not Lossless
(D) Deterministic: [If H(Y/X) = 0]
Y 1 3 4 1 3 4
H ( ) = log(4) + log ( ) + log 4 + log ( )
X 8 8 3 8 8 3
≠0
Y
H( ) ≠ 0
X
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GATE-2017 ECE-SET-2
∴ Not Deterministic
Y
(B) Noiseless: [If H(X/Y) = H ( ) = 0]
X
X Y
H( ) ≠ H( ) ≠ 0
Y X
∴ Not Noiseless
(C) Useless: [If I(X, Y) = 0]
X
I(X, Y) = H(X) − H ( )
Y
1 1
= log 2 + log 2 − 1 = 0
2 2
∴ Useless(Zero capacity )
30. Consider the parallel combination of two LTI systems shown in figure.
h1 (t)
x(t) + y(t)
h2 (t)
The impulse response of the systems are
h1 (t) = 2δ(t + 2) − 3δ(t + 1)
h2 (t) = δ(t– 2)
If the input x(t) is a unit step signal, then the energy of y(t) is
[Ans. *] Range: 7.0 to 7.0
h(t) = h1 (t) + h2 (t)
x(t) = u(t)
y(t) = x(t) * h(t)
= u(t) ∗ [2δ(t + 2) − 3δ(t + 1) + δ(t − 2)]
Taking Laplace Transform
1
Y(s) [2e2s − 3es + e−2s ]
s
Taking Inverse laplace transform
y(t) = 2u(t + 2) − 3u(t + 1) + u(t − 2)
y(t)
t
−2 −1 0 1 2
−1 2
∞
Eyt = ∫ |y(t)|2 dt = ∫ 4dt + ∫ 1dt
−∞
−2 −1
= (4 × 1) + (× 3) = 7W
(0, 3)
(−3, 0) (3, 0)
(0, −3)
z2 − 1 z (z 2 − 1)ez
Let f(z) = e =
z2 + 1 (z + i)(z − i)
z = i, −i are simple poles lying is side ‘C’
(i2 − 1)ei 2 i
Res f(z) = = e = iei
z=i 2i 2i
((−i)2 − 1)ei 1 −i
Res f(z) = = e = ie−i
z=i (−2i) i
∴ By Cauchy residue theorem,
z2 − 1 z
∮ 2 e dz = 2πi(iei − ie−i )
c z + 1
= −2π(ei − e−i )
= −2π{[cos(1) + i sin(1)] − [cos(1) − i sin(1)]}
= −4πi sin(1)
32. An electron (q1 ) is moving in free space with velocity 105 m/s towards a stationary electron
(q2 ) far away. The closest distance that this moving electron gets to the stationary electron
before the repulsive force diverts its path is _____ × 10−8 m
[Given, mass of electron m = 9.11 × 10−31 kg, charge of electron e = −1.6 × 10−19 C, and
permittivity ε0 = (1⁄36π) × 10−9 F/m].
[Ans. *] Range: 4.55 to 5.55
As electron (q1 ) moving with velocity 105 m/s i.e it is having kinetic energy
1
K. E = mV 2
2
As electron q2 which is at rest having potential energy P.E = qV.
The moving electron continue it’s motion with out deflection until P .E of q 2 = K . E of q1 .
1
mV 2 = qV (V is voltage which is same as of potential of charge at rest)
2
1 q
mV 2 = q ⋅ (R is the shortest distance)
2 4πεo R
q2 × 2 (1.6 × 10−19 )2 × 2
R= = = 5.06 × 10−8 m
4πεo × mV 2 4π × 10−9 × 9.1 × 10−31 × (105 )2
36π
R = 5.06 × 10−8 m
33. Assuming that transistors M1 and M2 are identical and have a threshold voltage of 1V, the
state of transistors M1 and M2 are respectively
3V
2.5 V M2
2V M1
2.5 V M2
V0
2V M1
Given Vth = 1V
Here both the transistors are ‘ON’
For 𝐌𝟐 :
VG − Vth < VD [1.5 < 3]
⇒ M2 is in saturation
For 𝐌𝟏 :
Let us assume M1 is in saturation
(ID )M2 = (ID )M1
(2.5 − V0 − 1)2 = (2 − 1)2 [∵ ID ∝ (VGS − Vth )2 ]
∴ V0 = 0.5
VGS − Vth > VDS [1 > 0.5]
⇒ our assumption is wrong
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.
GATE-2017 ECE-SET-2
∴ M1 is in triode region
M2 → saturation
M1 → triode
34. In the circuit shown, transistor Q1 and Q 2 are biased at a collector current of 2.6 mA.
Assuming the transistor current gains are sufficiently large to assume collector current equal
to emitter current and thermal voltage of 26 mV, the magnitude of voltage gain Vo ⁄Vs in the
mid band frequency range is ________ (up to second decimal place).
5V
1 kΩ
VO
Q1
VS ~
Q2
R B2
−5V
[Ans. *] Range: 49.0 to 51.0
5V
1 kΩ
VO
1
Q1 R eq =
g m2
VS ~ (Small signal equivalent
resistance)
Q2
R B2
−5V
V0 −g m1 R C
AV = =
Vs 1 + R m1 R eq
1 ICQ 2.6mA
Herer g m1 = g m2 = = = = 10−1
R eq VT 2.6mV
−g m1 RC −0.1 × 1000
∴ AV = = = −50
2 2
or
Method 2:
VS = 2 Vbe
V0 = −iC R C
V0 −iC R C
=
VS 2Vbe
−g m
= RC
2
= −50
35. A second order LTI system is described by the following state equation.
d
x (t) − x2 (t) = 0
dt 1
d
x (t) + 2x1 (t) + 3x2 (t) = r(t)
dt 2
When x1 (t) and x2 (t) are the two state variables and r(t) denotes the input. The output
c(t) = x1 (t). The system is
(A) undamped (oscillatory) (C) critically damped
(B) under damped (D) over damped
[Ans. D]
ẋ 1 − x2 = 0 ⇒ ẋ 1 − x2 … … … . ①
ẋ 2 + 2x1 + 3x2 = r
ẋ 2 = r − 2x1 − 3x2 … … … . ②
ẋ 0 1 x1 0
[ 1] = [ ][ ] + [ ]r
ẋ 2 −2 −3 x2 1
C = x1
x
[C] = [1 0] [x1 ]
2
Adj [SI − A]
TF = C B+D
|SI − A|
[SI − A] = [S −1 ] Adj [SI − A] = [S + 3 +1]
2 S+3 −2 S
[1 0] [ S + 3 +1 0 1
[1 0] [ ]
][ ] 1
TF = −2 S 1 = S =
S(S + 3) + 2 S 2 + 3S + 2 S 2 + 3S + 2
2
CE S + 3S + 2 = 0
X X
−2 −1 0
0.25
Pt = 5000 [1 + ]
2
= 5000 × 1.125
Pt = 5625 W
μ = 0.4
0.16
5625 = PC′ [1 + ]
2
5625 = PC′ [1.08]
5625
PC′ = = 5208 W
1.08
37. For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent
density (JL ) is 2.5 mA⁄cm2 and the open-circuit voltage (VOC ) is 0.451V. Consider thermal
voltage (VT) to be 25 mV. If the intensity of the incident light is increased by 20 times,
assuming that the temperature remains unchanged, VOC (in volts) will be _________
[Ans. *] Range: 0.51 to 0.54
The open circuit voltage of a solar cell is given by
kT Iph
Voc = ln [ ] ;
q Iso
Iph = Photo current
Iph JL So
Iph = 2.5 K (K is constant)
Is0 = Reverse saturation current
Ipg
⇒ Voc = VT ln [ ]
Iso
For a given area of operation, the above equation can be rewritten as
Iph
Voc = VT ln [ ]
Iso
IL
⇒ Voc = VT ln [ ]
Is
2.5 × 10−3 K
∴ 0.451 = 25 × 10−3 ln [ ]…….①
IS
Now intensity of light is increased by 20 times
′
20 × 2.5 × 10−3 K
∴ VOC = VT ln [ ]…….②
IS
By ① − ② we get
′
2.5 × 10−3 K 50 × 10−3 L
0.451 − Voc = VT ln [ ] − VT ln [ ]
IS IS
′
2.5 × 10−3 K IS
⇒ 0.451 − Voc = VT ln [ × ]
IS 50 × 10−3 K
′
⇒ 0.451 − Voc = 25 × 10−3 ln(0.05)
′
⇒ 0.451 − Voc = −0.07489
⇒ Voc = 0.526 V
38. A MOS capacitor is fabricated on p-type Si (silicon) where the metal work function is 4.1eV
and electron affinity of Si is 4.0eV, EC − EF = 0.9eV; where EC and EF are conduction band
minimum and the Fermi energy levels of Si, respectively. Oxide εr = 3.9, ε0 = 8.85 ×
10−14 F⁄cm , oxide thickness t ox = 0.1 μm and electron charge q = 1.6 × 10−19 C. If the
measured flat band voltage of this capacitor is −1V, then the magnitude of the fixed charge at
the oxide semiconductor interface, in nC⁄cm2, is ________
[Ans. *] Range: 6.85 to 6.95
Evacuum Evacuum
EF m EC
0.9 eV
EF p
EV
So ϕsemiconductor = 4 + 0.9 = 4.9 eV
{Work function ⇒ EVacuum − EFermilevel }
qox
VFB = ϕms −
Cox
qox
−1 = −0.8 −
Cox
V → Flat band voltage
{ FB
ϕms → ϕm − ϕs
qox
{ ⇒ potential developed due to charge at surface
Cox
qox
0.2 =
Cox
qox = 0.2 Cox
εox
= 0.2
t ox
3.9 × 8.85 × 10−14
= 0.2 ×
10−5
2
qox = 6.903 nC/cm
39. The permittivity of water at optical frequencies is 1.75ε0 . It is found that an isotropic light
source at a distance d under water forms an illuminated circular area of radius 5 m, as shown
in the figure. The critical angle is θc
5m
Air
Water θc d
Light Source
The value of d (in meter) is _________
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.
GATE-2017 ECE-SET-2
ε2 = 1.75 ε0
d θc
ε2 1
sin θc = √ ; sin θc =
ε1 √1.75
∴ θc = 49°
5
Form the triangle tan θc =
d
5 5
d= = = 4.34 m
tan(49) 1.15
1
40. The minimum value of the function (x) = x(x 2 − 3) in the interval −100 ≤ x ≤ 100 occurs at
3
x = __________
[Ans. *] Range: −𝟏𝟎𝟎. 𝟎𝟏 𝐭𝐨 − 𝟗𝟗. 𝟗𝟗
1 x3
f(x) = x(x 2 − 3 ) = − xin [−100, 100]
3 3
f ′ (x) = x 2 − 1 = 0
⇒ x = 1, −1 are critical points
2 2
f(1) = − , f(−1) =
3 3
f(−100) = −333233.33
f(100) = 333233.33
∴ The minimum values occurs at x = − 100
42. A unity feedback control system is characterized by the open loop transfer function
10K(s + 2)
G(s) = 3
s + 3s 2 + 10
The Nyquist path and the corresponding Nyquist plot of G(s) are shown in the figures below.
jω
+j∞ splane
S = Rejθ
R→∞
σ
0
−j∞
Nyquist Path for G(s)
j Im G
G(s)plane
+j 5.43 K
−jω
ω = 0 Re G
−K 2K
+jω
−j 5.43 K
[Ans. C]
10k (s + 2)
G(s) =
s3+ 3s 2 + 10
10k(s + 2)
G(s) =
(s + 3.72)(s − 0.36 + j1.5)(s − 0.36 − j1.5)
P = 2(Two poles in the RHS)
if K < 1, The number of encircleements about (−1, j0) is 0
N=P−Z
N=2−0=2
⇒ 2 CL poles lies in the RHSplane.
43. A unity feedback control system is characterized by the open loop transfer function
2(s + 1)
G(s) = 3
s + ks 2 + 2s + 1
The value of k for which the system oscillates at 2 rad/s is________
[Ans. *] Range: 0.74 to 0.76
2(s + 1)
G(s) = 3 , given ω = 2 rad⁄sec
s + ks 2 + 2s + 1
CE ⇒ S 3 + kS 2 + 4S + 3 = 0
S3 1 4
2 K 3
S
4k − 3
S1
k
S0 3
4k − 3 3
For marginal stable = 0 ⇒ K = = 0.75
k 4
1 1
x−y
∫ (∫ dx) dy
(x + y)3
0 0
1 1
1
x−y 2x − (x + y)
∫ (∫ 3
dy) dx = ∫ { dy] dx
(x + y) 0 (x + y)3
0 0
1
2x 1
= ∫ {[ 3
− ] dy} dx
0 (x + y) (x + y)2
1
= ∫ {[2x (x + y)−3 − (x + y)−2 ]dy} dx
0
1 1
2x(x + y)−2 (x + y)−1
=∫ { − } dx
0 −2 −1 0
1
−x 1 1
=∫ { + } dx
0 (x + y)2 x + y 0
1
−x 1 −1 1
= ∫ {[ 2
+ ]−[ + ]} dx
0 (x + 1) x+1 1 x
1
−x + x + 1
=∫ { } dx
0 (x + 1)2
1
1
= ∫ 2
dx
0 (x + 1)
−1 1
=( )
x+1 0
−1
= ( ) − (−1)
2
1
=
2
1 1
1 (x
x−y + y) − 2y
= ∫ [∫ 3
dx] dy = ∫ [ dx] dy
(x + y) 0 (x + y)3
0 0
1
1 2y
= ∫ {[ 2
− ] dx} dy
0 (x + y) (x + y)3
1 1
1 y
= ∫ {− + } dy
0 x + y (x + y)2 0
1
1 y 1 1
= ∫ {[− + 2 ] − [− + ]} dy
0 y + 1 (y + 1) y y
1
1 y
= ∫ {[− + ]} dy
0 y + 1 (y + 1)2
1
−(y + 1) + y
=∫ [ ] dy
0 (y + 1)2
1
−dy
=∫
0 (1 + y)2
1 1
=( )
1+y 0
1 1
= −1 = −
2 2
45. An abrupt pn junction (located at x=0) is uniformly doped on both p and n sides. The width of
the depletion region is W and the electric field variation in the x-direction is E(x). Which of the
following figures represents the electric field profile near the pn junction.
(A) E(x) (C) E(x)
n side p side
n side p side
W
(0.0) x
(0.0)
x
W
(B) E(x) (D) E(x)
n side p side n side p side
W
(0.0) x
(0.0)
x
W
[Ans. A]
We know Electric field is maximum at middle of junction so options (B), (D) can be
eliminated. In any p-n junction, Electric field is always from n to p (since Vn > Vp )
− +
p n
− +
− +
E. F
We know E = −∇V
Take option (a):
n p
+ −
+ −
+ −
E. F
n p
+ −
+ −
+ −
E. F
46. A modulating signal given by x(t) = 5 sin(4π103 t − 10π cos 2π103 t) V is fed to a phase
modulator with phase deviation constant k p = 5 rad⁄V. If the carrier frequency is 20 kHz, the
instantaneous frequency (in kHz) at t = 0.5ms is _________
[Ans. *] Range: 69.9 to 70.1
s(t) = AC cos[2πfc t + k p m(t)]
kp d
fi = fc + x(t)
2π dt
5 d
= 20 k + × 5 (sin 4π103 t − 10π cos 2π103 t)
2π dt
25
= 20 k + × [cos(4π103 t − 10π cos 2π103 t) (4π103 + 10π sin 2π103 t × 2π103 )]
2π
25
fi(t=0.5 ms) = 20k + × cos(4π + 10π) × 4π × 103
2π
25
= 20 k + × 4π × 103
2π
= 20 k + 50 k
= 70 k
47. In the voltage reference circuit shown in the figure, the op-amp is ideal and the transistors Q1 ,
Q 2 …, Q 32 are identical in all respects and have infinitely large values of common – emitter
current gain (β). The collector current (Ic ) of the transistors is related to their base emitter
voltage (VBE) by the relation IC = IS exp (VBE ⁄VT ); where Is is the saturation current. Assume
that the voltage VP shown in the figure is 0.7V and the thermal voltage VT = 26 mV
20 kΩ +15V
20 kΩ +
− Vout
5 kΩ −15V
VP
Q1 Q2 Q3 Q 32
f0 = 10 Hz
1 1
|H(f0 )| = 1 − =
2 2
∠H(f0 ) = −2 × 10 = −20
1 π
The output is = (8 × ) cos (20πt + − 20)
2 4
π
= 4 cos (20πt + − 20)
4
π
For the given second input signal 16 sin (40πt + )
8
f0 = 20 Hz
|H(f0 )| = 0
∠H(f0 ) = −40°
The output is zero
π
For the given third input signal 24 cos (80πt + )
16
f0 = 40 Hz
H(f0 ) = 0 as f0 > 20
∠H(f0 ) = −80°
The output is zero
π π
y(t) = 4 cos (20πt + − 20°) + 0 + 0 = 4 cos (20πt + − 20°)
4 4
42
Py (t) = =8W
2
49. The switch in the circuit, shown in the figure, was open for a long time and is closed at t =0
i(t)
5Ω
10 A
5Ω
t=0
2.5 H
10
iL (0− ) = = 5A = iL (0+ ) = I0
2
For t ≥ 0, switch is closed
x iL (t)
X
5Ω
i(t)
10A 5Ω
2.5 H ↓ I0
X
P
1Ω i0
10 V +
−
1Ω 1Ω
Q
1Ω
The Thevenin equivalent resistance (in Ω) across P-Q is _________
[Ans. *] Range: −𝟏. 𝟎𝟏 𝐭𝐨 − 𝟎. 𝟗𝟗
Evaluation of R th by case (3) approach
3 i0
− +
1Ω I
0A −3i + i0
0 +
+
1Ω 0V 1 i0 1 Ω − V
1(i0 − I) −
− +
(i0 − I) 1 Ω I
→ here, V = 1 i0 … … … ①
By KVL ⇒ 0 + 3i0 − 1. i0 − 1(i0 − I) = 0
⇒ 3i0 − i0 − i0 + I = 0
⇒ i0 + I = 0
⇒ I = −i0 … … … ②
From ① and ②
V +i0
R N = R th = = = −1Ω
I −i0
51. Standard air filled rectangular waveguides of dimensions a = 2.29 cm and b = 1.02 cm are
designed for radar applications. It is desired that these waveguides operate only in the
dominant TE10 mode with the operating frequency at least 25% above the cut-off frequency of
the TE10 mode but not higher than 95% of the next higher cutoff frequency. The range of the
allowable operating frequency f is
(A) 8.19 GHz ≤ f ≤ 13.1 GHz (C) 6.55 GHz ≤ f ≤ 13.1 GHz
(B) 8.19 GHz ≤ f ≤ 12.45 GHz (D) 1.64 GHz ≤ f ≤ 10.24 GHz
[Ans. B]
Given: a=2.29cm, b=1.02cm
c 3 × 108
fc |TE10 = = = 6.5 GHz
2a 2 × 2.29 × 10−2
a
Since, b < next higher order mode is TE20
2
c 2 c 3 × 108
fc |TE20 = × = = = 13.1 GHz
2 a a 2.29 × 10−2
So, the range of allowable operating frequency is
1.25 fc |TE10 ≤ f ≤ 0.95fc |TE20
i. e. 8.19GHz ≤ f ≤ 12.45GHz.
52. If the vector function F ⃗ = âx (3y − k1 z) + ây (k 2 x − 2z) − âz (k 3 y + z) is irrotational, then the
values of the constants k1 , k 2 and k 3 respectively, are
(A) 0.3, −2.5, 0.5 (C) 0.3, 0.33, 0.5
(B) 0.0, 3.0, 2.0 (D) 4.0, 3.0, 2.0
[Ans. B]
Given
⃗
F̅ = (3y − k1 z)i + (k 2 x − 2z)j − (k 3 y + z)k
Curl ⃗F = 0
i j ⃗k
∂ ∂ ∂
⇒ || || = 0
∂x ∂y ∂z
3y − k1 z k 2 x − 2z −k 3 y − z
⇒ (−k 3 + 2)i − j(0 − k1 ) + ⃗k(k 2 − 3) = 0
k 3 = 2; k1 = 0; k 2 = 3
53. The transfer function of a causal LTI system is H(s) = 1/s. If the input to the system is
x(t) = [sin(t)⁄πt]u(t); where u(t) is a unit step function. The system output y(t) as t → ∞ is
________
[Ans. *] Range: 0.45 to 0.55
1
H(s) =
s
sin t
x(t) = u (t)
πt
1
sin t u(t) ↔ 2
s +1
∞
sin t u(t) 1 π
↔∫ 2 ds = tan−1(s)|∞ −1
s = − tan (s)
t s +1 2
s
1 π
X(s) = [ − tan−1 (s)]
π 2
1 1
= − tan−1 (s)
2 π
Y(s)
H(s) =
X(s)
1 1 1
⇒ Y(s) = X(s)H(s) = [ − tan−1 (s)]
2 π s
1 1
y(∞) = lim sY(s) = lim [ − tan−1 (s)]
s−0 s→0 2 π
1
=
2
54. The state diagram of a finite state machine (FSM) designed to detect an overlapping sequence
of three bits is shown in the figure. The FSM has an input ‘In’ and an output ‘out’. The initial
state of the FSM is S0 .
ln = 0
00 Out = 0
S0 ln = 1
Out = 0
ln = 0 ln = 1
Out = 0 Out = 0 01
S1 ln = 0
Out = 0
10 ln = 1
S2 ln = 1 Out = 0
ln = 0
Out = 0 Out = 1
11
S3
If the input sequence is 10101101001101, starting with the left most bit, then the number of
times ‘Out’ will be 1 is _____
[Ans. *] Range: 4 to 4
Given input sequence
1 0 1 0 1 1 0 1 0 0 1 1 0 1
1 2 3 4
Number of times out will be 1 is 4
55. The signal x(t) = sin (14000 πt), where t is in seconds, is sampled at a rate of 9000 samples
per second. The sampled signal is the input to an ideal lowpass filter with frequency response
H(f) as follows:
1, |f| ≤ 12kHz
H(f) = {
0, |f| > 12kHz
What is the number of sinusoids in the output and their frequencies in kHz?
(A) Number =1, frequency = 7 (C) Number = 2, frequencies = 2, 7
(B) Number = 3, frequencies = 2, 7, 11 (D) Number = 2, frequencies = 7, 11
[Ans. B]
Given x(t) = sin (14000πt)
fm = 7 kHz,
fs = 9 kHz,
The frequency of sampled signal are ±fm ± nfs
= 7 kHz, 2 kHz, 16 kHz, 11 kHz, 25 kHz, …………
H(f)
1
f
−12 kHz 0 12 kHz
The output frequencies of the filter are = 7 kHz, 2 kHz, 11 kHz