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Power MOSFET Rayen Tine

This document provides information on the NTP35N15 power MOSFET, including its features, applications, maximum ratings, electrical characteristics, and dimensions. Some key specifications include a drain-to-source voltage of 150V, drain current of 37A at 25C and 23A at 100C, and a thermal resistance of 0.7C/W junction-to-case. It is commonly used in applications such as PWM motor controls and power supplies where voltages do not exceed 200V. Its advantages include high switching speed, low gate drive power requirement, simpler control circuitry, and negative temperature coefficient for parallel device operation.

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Christine Gomez
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96 views7 pages

Power MOSFET Rayen Tine

This document provides information on the NTP35N15 power MOSFET, including its features, applications, maximum ratings, electrical characteristics, and dimensions. Some key specifications include a drain-to-source voltage of 150V, drain current of 37A at 25C and 23A at 100C, and a thermal resistance of 0.7C/W junction-to-case. It is commonly used in applications such as PWM motor controls and power supplies where voltages do not exceed 200V. Its advantages include high switching speed, low gate drive power requirement, simpler control circuitry, and negative temperature coefficient for parallel device operation.

Uploaded by

Christine Gomez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Gomez, Christine S.

Macatangay, Eira Gwen A.

NTP35N15 POWER MOSFET

FEATURES
 Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery
Diode
 Avalanche Energy Specified
 IDSS and RDS(on) Specified at Elevated Temperature
 This is a Pb−Free Device*

APPLICATIONS
 PWM Motor Controls
 Power Supplies
 Converters

It is normally used in applications where voltages do not exceed about 200 volts.
Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it
is their low ON resistance that is particularly attractive. This reduces power dissipation
which reduces cost and size less metalwork and cooling is required. Also the low ON
resistance means that efficiency levels can be maintained at a higher level
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Value
Drain−to−Source Voltage, VDSS 150 V
Drain−to−Source Voltage (RGS = 1.0 M),
150 V
VDGS
Gate−to−Source Voltage
 Continuous, VGS
20 V
 Non−Repetitive (tp <= 10 ms),
40 V
VGSM
Drain Current
 Continuous @ TA 25°C, ID 37 A
 Continuous @ TA 100°C, ID 23 A
 Pulsed (Note 1), IDM 111 A
Total Power Dissipation @ TA = 25°C, PD 178 W
Operating and Storage Temperature
-55 to +150 °C
Range, Tstg
Single Drain−to−Source Avalanche
700 mJ
Energy, EAS
Thermal Resistance
 Junction−to−Case, RJC 0.7 °C/W
 Junction−to−Ambient, RJA 62.5 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from case for 10 260 °C
seconds, TL

The technical advantages of this power MOSFET is not limited to high switching
speed/ Little power is required to control it and the control circuitry is simpler/. The
typical turn-on gate-source voltage is 20 V, while zero voltage is used to turn on the
device off. Mosfets have a negative temperature coefficient on the drain current, which
facilitates paralleling several transistors for increased current-handling capability. If the
temperature of one of the component Mosfets increases, the current conducted drops,
restoring thermal balance among the devices connected. On state resistance of high
voltage used to be quiet high, but recent technological advances resulted in significant
reduction of that parameter. The switching losses are low, even with high switching
frequencies.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
DIMENTIONS
Reference:
https://www.onsemi.com/pub/Collateral/NTP35N15-D.PDF

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