Optimized 2Nd Order Continuous-Time Sigma-Delta Modulator With 29.92Μw Power, 137.27 Db Snr, And 10Mhz Bandwidth
Optimized 2Nd Order Continuous-Time Sigma-Delta Modulator With 29.92Μw Power, 137.27 Db Snr, And 10Mhz Bandwidth
I. Introduction
Continuous – time delta sigma modulation is well accepted for higher resolution ADC due to its adequate
requirements for many applications. To provide shaping to quantization noise using quantizer in band. Over last few
years, many delta sigma modulators of continuous time type have been demonstrated [1]. Usually discrete time delta
sigma modulators were used. Now days, interest towards continuous time DSM has been increased tremendously.
Implicit anti-aliasing, reduced BW requirements of active counterparts and remarkable power savings are some
attractive features over discrete time DSM. To digitize small frequency analog signals, CTDSMs are used due to its
power saving feature which is a key motivator. As shown on fig. 1 interface electronics is nothing but analog to
digital converter or vice versa with different specification as per the required application. Several designs pointing
this range ≥ 10MHz have been investigated in the last few years. After survey, we present the implementation of 23
bit CTDSM for many applications of wireless communication. The proposed DSM is designed using CMOS
process180nm, consumes 29.92µW power from supply of 1 V and attains a 140 dB dynamic range for a 10 MHz
signal bandwidth. Oversampling ratio i.e. OSR of 64 is utilized in this design. This delta sigma modulator having
several techniques to reduce power such as low power comparator and low power OTA has been used in the DSM.
Multi-bit quantizer has many advantages e.g. it increases no. of levels and reduces OSR to get appropriate signal
to noise ratio (SNR). As no. of level increase, step-size decreases which further cause reduction in sensitivity to jitter
due to clock, also the SR needed of the OTA in the analog loop filter. However, circuit design becomes tough and
complex for multi-bit quantizer as no. of bits start increasing. Therefore, comparator in the quantizer must be low
power, low voltage and should be design for less delay for the desired power dissipation.
We demonstrate design methodology to implement a three stage OTA with ultra-low power operates in sub-
threshold mode, which results less area and permitted to drive high capacitive loads. We adopt this approach when
we need ultra-low power and low voltage as the design constraints. Using 1 V supply voltage and having very low
power 296.72nW the implemented three stages OTA can drive upto 200pF. On comparison, three stages OTA
proposed structure shows significant enhancement in small signal and large signal performance. Sub-threshold
Devices achieve low bandwidth which can be compensated by high transition frequency when technologies are
scaled down. Therefore, sub-threshold mode is appropriate in that application where speed is not a concern [20].
These techniques are popular in the designing of Operational Transconductance Amplifiers and other sub-blocks
supplied by 1 V supply and with small consumption of current of the order of nA[21]-[25]
We also present another proposed structure of dynamic comparator. Analysis to calculate delay is presented and
based on the conventional comparator, new one is demonstrated. New proposed methodology doesn’t require
boosting in voltage or stack of many transistors. Only by connecting few transistors of minimum dimensions to the
conventional one, delay has been reduced enormously. Modifying conventional comparator also shows some
improvement such as remarkable power saving.
single bit ;discrete time DSMs using SC technique or CTDSMs using either active RC or Gm-C techniques. Hybrid
DSMs has been also used where combination of diverse techniques, such as DT and CT, oversampling with nyquist
ADCs, passive and active circuits, etc.
We present single loop topology over MASH topology to reduce the possibility of complexity which comes from
the overhead circuitry required to match the noise transfer function (NTF) and digital noise cancellation filter.
Second order noise transfer function is utilized to obtain peak signal to noise ratio (SNR) above 120dB (Bandwidth
10MHz). Therefore, thermal noise will limit the performance of the design.
Fig. 4: Schematic Circuit Diagram of Three Stage OTA Operating in Sub Threshold Region
Fig.4. represents the topology of the OTA used for the integrator design in this paper. Here, two integrators in
the second order DSM are same with respect to device dimensions.
Fig. 5: Small Signal Model of Three Stage OTA with Feed-Forward Compensation Strategy
Three Stage OTA operates in sub-threshold region is shown in fig.4.P Channel MOS devices M1 and M2 are
forming differential input stage and folded cascade structure is made by transistors M1-M10 which provides high
gain. Devices M5-M8 forms current mirror and this folded cascode operates at extreme low voltage i.e. 1 V supply.
pMOS devices M1 & M2 gives first stage transconductanceg ma . Second inverted stage is formed by common source
transistor M12. Last stage is implemented using M13- M16 transistors and this is non-inverting in nature. Gate of
M16 transistor is coming from output of the first stage and forms class AB stage to drive high capacitive loads and
provides feed-forward transconductanceg mF .
To get stable phase margins from three stages OTA, we need well suited compensation circuit. After surveying
different methods which are reported earlier, we concluded to use feed-forward compensation using two capacitors
to implement miller effect. Since there is no connection from inner capacitor to output stage, henceforth we get
better bandwidth potential. First time investigated proposed compensation strategy has many advantages. Proposed
compensation technique in fig.5 is made by two capacitors C ca and C cb and it also has transconductanceg mf of feed
forward stage.
Fig. 6: Gain and Phase Plot of Three Stage Operational Transconductance Amplifier
Table I: Simulated Amplifier Performance Parameters
Parameter Value
DC gain (dB) 107.1
GBW (KHz) 159.141
PM ( degrees) 50
Power Dissipation (nWatt) 296.721
Supply Voltage (V) 1
Capacitive Load (pF) 200
Input referred noise@1Kilohertz (pV/√Hz ) 2.2647
IV. Comparator
Comparators having two tail transistors perform much better at low voltages. Important concept in the proposed
comparator is to increase ΔV Gn/Gp voltage so that latch regeneration speed can be improved.
Table II: Simulation Results of Dynamic Comparator
Design Parameter Standard Comparator with two tail and two switch transistors
Technology(nm) 180
Supply voltage (V) 1
Transistor count 16
Offset Voltage (mV) 7.8
Power Dissipation (µW) 10.99
Delay (nS) 0.49
Speed (GHz) 3
SR+/SR- (µV/S)@ CL =1pF 10.96/ 30.26
SR+/SR- (µV/S)@ CL =5pF 2.10/6.19
Settling Time(nS) @ CL = 1pF 148.97
Settling Time(nS) @ CL = 5pF 746.72
Fig. 7 depicts the schematic circuit of the proposed dynamic comparator. Two special transistors acting as
controlled transistors M11 and M12 are connected in parallel to M3 and M4 transistors in first stage but we connect
them in cross coupling manner. Functioning can be explained as follows: during first phase of reset and clock is kept
zero, Tail transistors M15 and M16 are kept off (keep static power to zero) , intermediate nodes Gp and Gn are
further charged to supply voltage via transistors M3 and M4, henceforth M11 and M12 are being off. Eventually
output of the latch is pulled down to ground via transistors MR1 and MR2. We discuss second case when clock is
kept VDD and two transistors M15 and M16 acting as tail transistors are turning on, transistors M4 and M3 are
becoming off at this stage. Sequentially, when decision making stage starts operating, two transistors M11 and
M12are not in conduction (because Gp and Gn nodes are utmost equal to supply voltage). According to the applied
input voltages GpnadGn start falling with different rates. If one input is greater than the other input, then
intermediate output node of that branch starts falling faster. When one starts falling faster, the pMOS controlling
transistor M11 here becoming turning on, pulls other intermediate node to the supply voltage; and therefore, other
controlling MOS transistor M12 remains turned off, permit Gn to be discharged completely. Here, when Gn
discharges faster transistor M11 turned on, causes Gp to fully charge upto VDD. Therefore, difference between Gn
and Gp i.e ΔVGn/Gp increases in exponential manner, resulting small regeneration time. Two nMOS transistors are
placed as controlled switches below the MOS transistors M13 and M14 at the input to reduce the static power
dissipation. Table II shows the simulated results of the dynamic comparator.
Fig. 8: Response of Latch Comparator without Switch Control Transistor (Transient Analysis)
Fig. 9: Response of Latch Comparator with Switch Control Transistor (Transient Analysis)
V. Results
The continuous-time DSM of first order and second order were implemented in an 180nm CMOS process. Fig.
10, fig. 11, fig. 12 and fig. 13 show the system level diagrams and its transient responses for first order and second
order DSMs respectively.
Fig. 14: Power Spectral Density of First Order DSM with 4096 Points and Hanning Window
Fig. 15 depicts the power spectral density of the second order modulator which results in the peak signal to noise
ratio (SNR). The dynamic range (DR) and peak signal to noise ratio (SNR) are 140 dB and 137.2 dB respectively.
Response of the quantizer is shown in shown in fig. 16
Fig. 15: Power Spectral Density of Second Order DSM with 4096 Points and Hanning Window
Table V: Comparison of Performance with the Previous CT DSM with the Signal Bandwidth ≥10MHz
This Work [6] [11] [15]
Process [nm] 180nm 90 65 65
Fs[MHz] 1280 500 840 900
BW[MHz] 10MHz 25 30 45
DR[dB] 140 72 77.1 82.5
Peak SNR [dB] 137.27 69 75.9 78.5
Operating Voltage [V] 1 1.2 1.1/2.3 1.2/1.8
Power [ µW] 29.92 85000 13000 24700
FOMs[dB] 255.2 166.7 170.7 167.9
VI. Conclusion
We presented optimization and analysis for ultra-low power single bit quantizer continuous-time delta sigma
converters using two tail standard comparator and three stage feed-forward compensated OTA. Active RC integrator
with resistive feedback was selected to lower the noise and power consumption. A cascaded structure of integrators
was chosen to realize loop filter. Comparison to multi-bit quantizer is also demonstrated with same specification.
These two optimized circuit of comparator and OTA were used to the second order CTDSM implemented in an
180nm CMOS Technology. Designed second order DSM has a DR of 140 dB, a peak Signal to noise ratio of 137.2
dB and Schreier figure of merit of 255.2 dB and dissipating 29.92µW from a supply voltage of 1 V. An
experimental prototype of 1 bit second order modulator has proven the productiveness of the proposed techniques,
also achieves very good performance with ultra-low power in the absence of any correction/calibration logic.
References
[1] Norsworthy, S.R. Delta-sigma data converters. Theory, Design, and Simulation. New York: IEEE Press,
1996.
[2] Nguyen, K., Adams, R., Sweetland, K. and Chen, H. A 106-dB SNR hybrid oversampling analog-to-digital
converter for digital audio. IEEE Journal of Solid-State Circuits 40 (12) (2005) 2408-2415.
[3] Choi, M.Y., Lee, S.N., You, S.B., Yeum, W.S., Park, H.J., Kim, J.W. and Lee, H.S. A 101-dB SNR hybrid
delta-sigma audio ADC using post integration time control. Custom Integrated Circuits Conference, 2008,
89-92.
[4] Kauffman, J.G., Witte, P., Lehmann, M., Becker, J., Manoli, Y. and Ortmanns, M. A 72 db dr, ct ΔΣ
modulator using digitally estimated, auxiliary dac linearization achieving 88 fj/conv-step in a 25 mhz
bw. IEEE Journal of Solid-State Circuits 49 (2) (2014) 392-404.
[5] Sukumaran, A. and Pavan, S. Low power design techniques for single-bit audio continuous-time delta
sigma ADCs using FIR feedback. IEEE Journal of Solid-State Circuits 49 (11) (2014) 2515-2525.
[6] Gharbiya, A. and Johns, D.A. A 12-bit 3.125 MHz bandwidth 0–3 MASH delta-sigma modulator. IEEE
Journal of Solid-State Circuits 44 (7) (2009) 2010-2018.
[7] Pavan, S. Continuous-time delta-sigma modulator design using the method of moments. IEEE Transactions
on Circuits and Systems I: Regular Papers 61 (6) (2014) 1629-1637.
[8] Young, B., Reddy, K., Rao, S., Elshazly, A., Anand, T. and Hanumolu, P. K. A 75dB DR 50MHz BW 3 rd
order CT-ΔΣ modulator using VCO-based integrators. IEEE Symposium on VLSI Circuits Digest of
Technical Papers, 2014, 1-2.
[9] Lo, C.L., Ho, C.Y., Tsai, H.C. and Lin, Y. H. A 75.1 dB SNDR 840MS/s CT ΔΣ modulator with 30MHz
bandwidth and 46.4 fJ/conv FOM in 55nm CMOS. IEEE Symposium on VLSI Circuits (VLSIC), 2013,
C60-C61.
[10] Sukumaran, A. and Pavan, S. A 280μW audio continuous-time ΔΣ modulator with 103dB DR and 102dB
A-Weighted SNR. IEEE Asian Solid-State Circuits Conference (A-SSCC), 2013, 385-388.
[11] Pavan, S. and Sankar, P. Power reduction in continuous-time delta-sigma modulators using the assisted
opamp technique. IEEE Journal of Solid-State Circuits 45 (7) (2010) 1365-1379.
[12] Wu, B., Zhu, S., Xu, B. and Chiu, Y. 15.1 A 24.7 mW 45MHz-BW 75.3 dB-SNDR SAR-assisted CT ΔΣ
modulator with 2nd-order noise coupling in 65nm CMOS. IEEE International Conference on Solid-State
Circuits (ISSCC), 2016, 270-271.
[13] Pavan, S. Systematic design centering of continuous time oversampling converters. IEEE Transactions on
Circuits and Systems II: Express Briefs 57 (3) (2010) 158-162.
[14] Kim, Y.G., Cho, M.H., Kim, K.D., Kwon, J.K. and Kim, J. A 105.5 dB, 0.49 mm 2 Audio ΣΔ modulator
using chopper stabilization and fully randomized DWA. IEEE Conference on Custom Integrated Circuits,
2008, 503-506.
[15] Park, H., Nam, K., Su, D.K., Vleugels, K. and Wooley, B.A. A 0.7-V 870-$\mu $ W Digital-Audio CMOS
Sigma-Delta Modulator. IEEE Journal of Solid-State Circuits 44 (4) (2009) 1078-1088.
[16] Wang, T., Li, W., Yoshizawa, H., Aslan, M. and Temes, G.C. A 101 dB DR 1.1 mW audio delta-sigma
modulator with direct-charge-transfer adder and noise shaping enhancement. IEEE Asian Conference on
Solid State Circuits (A-SSCC), 2012, 249-252.
[17] Liu, L., Li, D., Ye, Y., Chen, L. and Wang, Z. A 95dB SNDR audio ΔΣ modulator in 65nm CMOS.
Custom Integrated Circuits Conference (CICC), 2011, 1-4.
[18] Li, Y., Poon, C.C. and Zhang, Y.T. Analog integrated circuits design for processing physiological
signals. IEEE Reviews in Biomedical Engineering 3 (2010) 93-105.
[19] Georgiou, J. and Toumazou, C. A 126-/spl mu/W cochlear chip for a totally implantable system. IEEE
Journal of Solid-State Circuits 40 (2) (2005) 430-443.
[20] Monsurrò, P., Scotti, G., Trifiletti, A. and Pennisi, S. Biasing technique via bulk terminal for minimum
supply CMOS amplifiers. Electronics Letters 41 (14) (2005) 779-780.
[21] Chatterjee, S., Tsividis, Y. and Kinget, P. 0.5-V analog circuit techniques and their application in OTA and
filter design. IEEE journal of solid-state circuits 40 (12) (2005) 2373-2387.
[22] Bernal, M.R.V., Celma, S., Medrano, N. and Calvo, B. An ultralow-power low-voltage class-AB fully
differential OpAmp for long-life autonomous portable equipment. IEEE Transactions on Circuits and
Systems II: Express Briefs 59 (10) (2012) 643-647.
[23] Magnelli, L., Amoroso, F.A., Crupi, F., Cappuccino, G. and Iannaccone, G. Design of a 75‐nW, 0.5‐V
subthreshold complementary metal–oxide–semiconductor operational amplifier. International Journal of
Circuit Theory and Applications 42 (9) (2014) 967-977.
[24] Jose, M. Sigma-delta modulators: Tutorial overview, design guide, and state-of-the-art survey. IEEE
Transactions on Circuits and Systems I: Regular Papers 58 (1) (2011) 1-21.
[25] Schreier, R. and Gabor, C. Temes Understanding Delta Sigma Data Converters IEEE Press. A John Wiley
& Sons. Inc. Publication, 2005.
[26] Murmann, B. ADC Performance Survey 1997–2015 [Online]. Available: http: //www. stanford.edu /~
murmann/adcsurvey.html 2015
[27] Oliaei, O. Sigma-delta modulator with spectrally shaped feedback. IEEE Transactions on Circuits and
Systems II: Analog and Digital Signal Processing 50 (9) (2003) 518-530.