Types of Configuration of Transistors: EB CB C
Types of Configuration of Transistors: EB CB C
INPUTS AND OUTPUT PARAMETERS: the input parameters are VEB and IE and the output parameters
are VCB and IC. The input current flowing into the emitter terminal must be higher than the base current
and collector current to operate the transistor, therefore the output collector current is less than the
input emitter current.
CURRENT GAIN:The current gain is generally equal or less than to unity for this type of
configuration.Current gain in common base configuration is given as:
PHASE OF SIGNALS: The input and output signals are in-phase in this configuration.
IMPEDENCE: This transistor configuration has high output impedance and low input impedance.
CIRCUIT DIAGRAM:
Input Characteristics
Input characteristics are obtained between input current and input voltage with constant output voltage.
First keep the output voltage VCB constant and vary the input voltage VEB for different points then at
each point record the input current IE value. Repeat the same process at different output voltage levels.
Now with these values we need to plot the graph between IE and VEB parameters. The below figure
show the input characteristics of common base configuration. The equation to calculate the input
resistance Rin value is given below.
Output Characteristics
The output characteristics of common base configuration are obtained between output current and
output voltage with constant input current. First keep the emitter current constant and vary the VCB
value for different points, now record the IC values at each point. Repeat the same process at different IE
values. Finally we need to draw the plot between VCB and IC at constant IE. The below figure show the
output characteristics of common base configuration. The equation to calculate the output resistance
value is given below.
ACTIVE REGION:When the base-emitter junction is forward biased and the collector-base junction is
reverse biased ,it is called active region.
cut off region: when both, collector-base and base-emitter junctions are reverse biased it is cut off
region.the output current is zero in this case.
INPUT AND OUTPUT PARAMETERS:In this configuration the input parameters are VBE and IB and the
output parameters are VCE and IC.
CURRENT GAIN: In this configuration the emitter current is equal to the sum of small base current and
the large collector current. i.e. IE = IC + IB.current gain is given as:
Current gain (β) = IC/IB -----> as Current gain (in common base configuration) is (α) = IC/IE
so, current gain in common emitter configuration (β) = IC/IB x IE/IE = IC/IE /IB/IE --------1
PHASE OF SIGNALS: But the output signal has a phase shift of 180 0 i.e. both the input and output are
inverse to each other.
IMPEDENCE: This configuration is mostly used one among all the three configurations. It has medium
input and output impedance values.
CIRCUIT DIAGRAM:
INPUT CHARACTERISTICS: The input characteristics of common emitter configuration are
obtained between input current IB and input voltage VBE with constant output voltage V CE. Keep the
output voltage VCE constant and vary the input voltage V BE for different points, now record the values of
input current at each point. Now using these values we need to draw a graph between the values of I B
and VBE at constant VCE. The equation to calculate the input resistance Rin is given below.
CONVENTION TABLE: