NXP Semiconductors Document Number: MRF24G300HS

Technical Data Rev. 0, 09/2019

RF Power GaN Transistors

These 300 W CW GaN transistors are designed for industrial, scientific and MRF24G300HS
medical (ISM) applications at 2450 MHz. These devices are suitable for use in MRF24G300H
CW, pulse, cycling and linear applications. These high gain, high efficiency
devices are easy to use and will provide long life in even the most demanding
environments.
These parts are characterized and performance is guaranteed for
applications operating in the 2400 to 2500 MHz band. There is no guarantee of 2400–2500 MHz, 300 W CW, 50 V
performance when these parts are used in applications designed outside of WIDEBAND
these frequencies. RF POWER GaN TRANSISTORS

Typical Performance: In 2400–2500 MHz MRF24G300HS reference circuit,

VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1)

Frequency Pin Pout Gps D NI--780S--4L

(MHz) Signal Type (W) (W) (dB) (%) MRF24G300HS

2400 CW 10.0 336 15.3 70.4

2450 10.0 332 15.2 73.0
2500 10.0 307 14.9 74.4

1. All data measured in fixture with device soldered to heatsink.

NI--780H--4L
Load Mismatch/Ruggedness MRF24G300H
Frequency Signal Pin Test
(MHz) Type VSWR (W) Voltage Result

2450 Pulse > 20:1 at 12.6 Peak 55 No Device

(100 sec, All Phase Degradation
20% Duty Angles
Cycle)

Features Gate A 3 1 Drain A

 Advanced GaN on SiC, for optimal thermal performance
 Characterized for CW, long pulse (up to several seconds) and short pulse
operations Gate B 4 2 Drain B
 Device can be used in a single--ended or push--pull configuration
 Input matched for simplified input circuitry
 Qualified up to 55 V (Top View)
 Suitable for linear application
Note: The backside of the package is the
Typical Applications source terminal for the transistor.
 Industrial heating Figure 1. Pin Connections
 Welding and heat sealing
 Plasma generation
 Lighting
 Scientific instrumentation
 Medical
– Microwave ablation
– Diathermy

 2019 NXP B.V. MRF24G300HS MRF24G300H

RF Device Data
NXP Semiconductors 1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS 125 Vdc
Gate--Source Voltage VGS –8, 0 Vdc
Operating Voltage VDD 0 to +55 Vdc
Maximum Forward Gate Current, IG (A+B), @ TC = 25C IGMAX 42 mA
Storage Temperature Range Tstg – 65 to +150 C
Case Operating Temperature Range TC – 55 to +150 C
Maximum Channel Temperature (1) TCH 350 C

Table 2. Thermal Characteristics

Characteristic Symbol Value Unit
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case RJC (IR) 0.52 (2) C/W
Case Temperature 125C, PD = 118 W
Thermal Resistance by Finite Element Analysis, Channel--to--Case RCHC 0.72 (3) C/W
Case Temperature 125C, PD = 118 W (FEA)

Table 3. ESD Protection Characteristics

Test Methodology Class
Human Body Model (per JS--001--2017) 1B, passes 900 V
Charge Device Model (per JS--002--2014) 3, passes 1200 V

Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)

Drain--Source Breakdown Voltage V(BR)DSS 150 — — Vdc

(VGS = –8 Vdc, ID = 24.3 mAdc)

On Characteristics (4)
Gate Threshold Voltage VGS(th) –3.8 –3.16 –2.3 Vdc
(VDS = 10 Vdc, ID = 22 mAdc)
Gate--Source Leakage Current IGSS –10.0 — — mAdc
(VDS = 0 Vdc, VGS = –5 Vdc)

Table 5. Ordering Information

Device Tape and Reel Information Package
MRF24G300HSR5 R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel NI--780S--4L
MRF24G300HR5 R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--780H--4L
1. Reliability tests were conducted at 225C. Operation with TCH at 350C will reduce median time to failure.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. RCHC (FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated by
the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8263.
4. Each side of device measured separately.

MRF24G300HS MRF24G300H
RF Device Data
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NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors

Turning the device ON

1. Set VGS to –5 V
2. Turn on VDS to nominal supply voltage (48 V)
3. For Class AB operations increase VGS until desired IDS current is attained
4. Apply RF input power to desired level

Turning the device OFF

1. Turn RF power off
2. Reduce VGS down to –5 V
3. Reduce VDS down to 0 V (Adequate time must be allowed
for VDS to reduce to 0 V to prevent severe damage to device.)
4. Turn off VGS

MRF24G300HS MRF24G300H
RF Device Data
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 TYPICAL CHARACTERISTICS

1012

1011
TC = 65C
1010
85C
109

MTTF (HOURS)
105C
108

107
106

105
125C
104
103
50 70 90 110 130 150 170 190 210 230
DISSIPATED POWER (W)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com.

Figure 2. MTTF versus Dissipated Power and Case

Temperature — CW

MRF24G300HS MRF24G300H
RF Device Data
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 MRF24G300HS 2400–2500 MHz REFERENCE CIRCUIT — 5.0 cm  7.0 cm (2.0  2.8)

Table 6. 2400–2500 MHz Performance (1) (In NXP MRF24G300HS Reference Circuit, 50 ohm system)
VDD = 48 Vdc, VGS(A+B) = –5 Vdc, Pin = 10 W, CW

Frequency Pout Gps D

(MHz) (W) (dB) (%)

2400 336 15.3 70.4

2450 332 15.2 73.0

2500 307 14.9 74.4

1. All data measured in fixture with device soldered to heatsink.

MRF24G300HS MRF24G300H
RF Device Data
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 MRF24G300HS 2400–2500 MHz REFERENCE CIRCUIT — 5.0 cm  7.0 cm (2.0  2.8)

MRF24G300HS D121225
Rev. 2 C6

C5
C3 C4 C7

R1 VDS
VGS

R2
C2 C9
C1 Q1 C8

Note: All data measured in fixture with device soldered to heatsink. aaa--033536

Figure 3. MRF24G300HS Reference Circuit Component Layout — 2400–2500 MHz

Table 7. MRF24G300HS Reference Circuit Component Designations and Values — 2400–2500 MHz
Part Description Part Number Manufacturer
C1, C4 20 pF Chip Capacitor 600F200JT250XT ATC
C2 1.2 pF Chip Capacitor 600F1R2BT250XT ATC
C3 1.0 F Chip Capacitor GCM21BR71H105KA03L Murata
C5 27 pF Chip Capacitor 600F270JT250XT ATC
C6, C7 10 F Chip Capacitor GRM32EC72A106KE05L Murata
C8 10 pF Chip Capacitor 800R100JT500XT ATC
C9 0.1 pF Chip Capacitor 600F0R1BT250XT ATC
Q1 RF Power GaN Transistor MRF24G300HS NXP
R1 10 , 1/4 W Chip Resistor CRCW120610R0JNEA Vishay
R2 5.1 , 1/8 W Chip Resistor CRCW08055R10JNEA Vishay
PCB Rogers RT6035HTC, 0.030, r = 3.5, 2 oz. Copper D121225 MTL

MRF24G300HS MRF24G300H
RF Device Data
6 NXP Semiconductors
 TYPICAL CHARACTERISTICS — 2400–2500 MHz
MRF24G300HS REFERENCE CIRCUIT

19 80
VDD = 48 Vdc, Pin = 10 W, VGS(A+B) = –5 Vdc, CW

EFFICIENCY (%)
18 75

D, DRAIN
D
17 70

Gps, POWER GAIN (dB)

16 65
15 Gps 60

14 400

POWER (WATTS)
Pout, OUTPUT
13 350

12 Pout 300

11 250

10 200
2400 2410 2420 2430 2440 2450 2460 2470 2480 2490 2500
f, FREQUENCY (MHz)
Figure 4. Power Gain, Drain Efficiency and CW Output Power
versus Frequency at a Constant Input Power

400
VDD = 48 Vdc, VGS(A+B) = –5 Vdc, CW f = 2400 MHz
350
Pout, OUTPUT POWER (WATTS)

300
2500 MHz 2450 MHz
250

200

150

100

50

0
0 2 4 6 8 10 12 14
Pin, INPUT POWER (WATTS)
Figure 5. CW Output Power versus Input Power and Frequency

18 90
f = 2500 MHz
17 2450 MHz 80
Gps
D, DRAIN EFFICIENCY (%)

16 70
Gps, POWER GAIN (dB)

2400 MHz
15 D 60
2500 MHz
14 2450 MHz 50

13 2400 MHz 40

12 30

11 20
VDD = 48 Vdc, VGS(A+B) = –5 Vdc, CW
10 10
0 50 100 150 200 250 300 350 400
Pout, OUTPUT POWER (WATTS)
Figure 6. Power Gain and Drain Efficiency versus
CW Output Power and Frequency

MRF24G300HS MRF24G300H
RF Device Data
NXP Semiconductors 7
 2400–2500 MHz REFERENCE CIRCUIT

f Zsource Zload
(MHz) () ()
2400 2.55 – j2.96 2.41 – j3.12
2450 2.55 – j2.72 2.13 – j2.98
2500 2.56 – j2.49 1.88 – j2.80
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.

Input Device Output

Matching Under Matching
50  Network Test Network 50 

Zsource Zload

Note: Side A and Side B are tied together for these measurements.

Figure 7. Series Equivalent Source and Load Impedance — 2400–2500 MHz

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 PACKAGE DIMENSIONS

MRF24G300HS MRF24G300H
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MRF24G300HS MRF24G300H
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 MRF24G300HS MRF24G300H
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MRF24G300HS MRF24G300H
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 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following resources to aid your design process.

Application Notes
 AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 RF High Power Model
 .s2p File (Each side of device measured separately.)
Development Tools
 Printed Circuit Boards

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Sept. 2019  Initial release of data sheet

MRF24G300HS MRF24G300H
RF Device Data
NXP Semiconductors 13
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MRF24G300HS MRF24G300H
Document Number: MRF24G300HS RF Device Data
Rev. 0, 09/2019
14 NXP Semiconductors