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BAS16 BAS16: Sot23 PNP Silicon High Speed Switching Diode

This document provides specifications for the BAS16 SOT23 PNP silicon high speed switching diode made by Zetex plc. It includes: 1) Dimensions and tolerances for the SOT23 package in both metric and imperial units. 2) Absolute maximum ratings and electrical characteristics for parameters like forward voltage, reverse current, switching times. 3) Notes that measurements are under pulsed conditions to avoid excessive heating and that the device is supported by distributors worldwide.
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0% found this document useful (0 votes)
65 views2 pages

BAS16 BAS16: Sot23 PNP Silicon High Speed Switching Diode

This document provides specifications for the BAS16 SOT23 PNP silicon high speed switching diode made by Zetex plc. It includes: 1) Dimensions and tolerances for the SOT23 package in both metric and imperial units. 2) Absolute maximum ratings and electrical characteristics for parameters like forward voltage, reverse current, switching times. 3) Notes that measurements are under pulsed conditions to avoid excessive heating and that the device is supported by distributors worldwide.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SOT23 PNP SILICON HIGH

BAS16 SPEED SWITCHING DIODE BAS16


ISSUE 3 – FEBRUARY 1996

PIN CONFIGURATION
1 E
DIM Millimeters Inches C

Min Max Min Max


PARTMARKING DETAILS B
A 2.67 3.05 0.105 0.120
E BAS16 – A6
C B 1.20 1.40 0.047 0.055

C – 1.10 – 0.043 3
SOT23
B D 0.37 0.53 0.0145 0.021

F 0.085 0.15 0.0033 0.0059 ABSOLUTE MAXIMUM RATINGS.


PARAMETER SYMBOL VALUE UNIT
G NOM 1.9 NOM 0.075
Continuous Reverse Voltage VR 75 V
K 0.01 0.10 0.0004 0.004
Repetative Reverse Voltage VRRM 85 V
L 2.10 2.50 0.0825 0.0985
Repetative Peak Forward Current IFRM 250 mA
N NOM 0.95 NOM 0.37 Power Dissipation at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).


PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Forward Voltage VF 715 IF=1mA


855 IF=10mA
1000 IF=50mA
1250 IF=150mA

Reverse Current IR 30 nA VR=25V, Tj=150°C


1 mA VR=75V
50 VR=75V, Tj=150°C

Forward Recovery VFR 1.75 Switched to


Voltage IF=10mA, tr=20ns

Diode Capacitance Cd 2 pF f=1MHz, VR=0

Reverse Recovery Time trr 6 ns IF=10mA, IRM=10mA


RL=100Ω , Irr=1mA

(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%


Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) limited to 275V
Facsimile: (44)161-627 5467

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 87 Modular Avenue 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY11725 Hing Fong Road, Kwai Fong major countries world-wide
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611  Zetex plc 1995
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
SOT23 PNP SILICON HIGH
BAS16 SPEED SWITCHING DIODE BAS16
ISSUE 3 – FEBRUARY 1996

PIN CONFIGURATION
1 E
DIM Millimeters Inches C

Min Max Min Max


PARTMARKING DETAILS B
A 2.67 3.05 0.105 0.120
E BAS16 – A6
C B 1.20 1.40 0.047 0.055

C – 1.10 – 0.043 3
SOT23
B D 0.37 0.53 0.0145 0.021

F 0.085 0.15 0.0033 0.0059 ABSOLUTE MAXIMUM RATINGS.


PARAMETER SYMBOL VALUE UNIT
G NOM 1.9 NOM 0.075
Continuous Reverse Voltage VR 75 V
K 0.01 0.10 0.0004 0.004
Repetative Reverse Voltage VRRM 85 V
L 2.10 2.50 0.0825 0.0985
Repetative Peak Forward Current IFRM 250 mA
N NOM 0.95 NOM 0.37 Power Dissipation at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).


PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Forward Voltage VF 715 IF=1mA


855 IF=10mA
1000 IF=50mA
1250 IF=150mA

Reverse Current IR 30 nA VR=25V, Tj=150°C


1 mA VR=75V
50 VR=75V, Tj=150°C

Forward Recovery VFR 1.75 Switched to


Voltage IF=10mA, tr=20ns

Diode Capacitance Cd 2 pF f=1MHz, VR=0

Reverse Recovery Time trr 6 ns IF=10mA, IRM=10mA


RL=100Ω , Irr=1mA

(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%


Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) limited to 275V
Facsimile: (44)161-627 5467

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 87 Modular Avenue 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY11725 Hing Fong Road, Kwai Fong major countries world-wide
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611  Zetex plc 1995
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.

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