2N2137 thru 2N2146 (GERMANIUM)

2N2137A thru 2N2146A

PNP germanium industrial power transistors for

driver applications in high reliability equipment.

CASE 11 CASE 4-04

(TO-3) (TO-41)

For units with solder lugs attached, specify

devices MP2137,A etc. (TO-41 package)

MAXIMUM RATINGS
Apply also to standard, non-A series

2N2137A 2N2138A 2N2139A 2N2140A 2N2141A

Rating Symbol 2N2142A 2N2143A 2N2l44A 2N2145A
Unit
2N2146A

Collector-Base Voltage VCB 30 45 60 75 90 Vdc

Collector-Emitter Voltage VCES 30 45 60 75 90 Vdc

Collector-Emitter Voltage VCEO 20 30 45 60 65 Vdc

Emitter-Base Voltage VEB 15 25 30 40 45 Vdc

Total Device Dissipation

@ TC; 25°C Pn 70 Watts
Derate above 25°C 0.833 W/oC

Operating and Storage Junc- °c

T J , T stg -65 to +110
tion Temperature Range

2-243
2N2137 thru 2N2146 (continued)

ELECTRICAL CHARACTERISTICS
*Characteristics apply also to corresponding, non-A type numbers.

Characteristic Symbol Min I Typ I Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage** BVCEO** Vdc
(IC = 500 mAdc, IB = 0) 2N2137A,2N2142A* 20 - -
2N2138A,2N2143A* 30 - -
2N2139A,2N2144A* 45 - -
2N2140A,2N2145A* 60 - -
2N2141A,2N2146A* 65

Collector-Emitter Breakdown Voltage** BV CES** Vdc

(IC = 300 mAdc, VBE = 0) 2N2137A,2N2142A* 30 - -
2N2138A,2N2143A* 45 - -
2N2139A,2N2144A* 60 - -
2N2140A,2N2145A* 75 - -
2N2141A,2N2146A* 90 - -
Floating Potential VEBF Vdc
(V CB = 30 Vdc, IE = 0) 2N2137A,2N2142A* - - 1.0
(V CB = 45 Vdc, IE = 0) 2N2138A,2N2143A* - - 1.0
(V CB = 60 Vdc, IE = 0) 2N2139A,2N2144A* - - 1.0
(V CB = 75 Vdc, IE = 0) 2N2140A,2N2145A* - - 1.0
(V CB =90Vdc, IE =0) 2N2141A,2N2146A* - - 1.0

Collector-Base Cutoff Current I CBO mAdc

(V CB = 2.0 Vdc, IE = 0) - 0.018 0.05
(V CB = VCB(max), IC = 0, TC = +71° C) - 0.75 5.0

Collector-Base Cutoff Currentt I CB01 mAdc

(V CB = VCB(max), IE = 0) - 0.1 2.0

Emitter-Base Cutoff Current lEBO mAdc

(V BE = VBE(max)' IC = 0) - 0.08 2.0
(V BE = VBE(max)' IC = 0, TC = +71° C) - 0.5 5.0

ON CHARACTERISTICS
DC Current Gain h FEl . -
(IC = O. 5 Adc, VCE = 2.0 Vdc)t 2N2137A-2N2141A* 30 45 60
2N2142A-2N2146A* 50 70 100
(I C = 2.0 Adc, VCE = 2.0 Vde) 2N2137A-2N2141A* hFE 15 22 -
2N2142A-2N2146A* 25 33 -
Collector-Emitter Saturation Voltage Vdc
VCE(sat)
(IC = 2. 0 Adc, IB = 200 mAde) - 0.12 0.5

Base-Emitter Saturation Voltage Vdc

V BE (sat)
(IC = 2.0 Adc, IB = 200 mAdc) - 0.75 1.2

DYNAMIC CHARACTERISTICS
Common Emitter Cutoff Frequency
(IC = 2.0 Ade, VCE = 6.0 Vdc)

**Sweep method: 1/2 cycle sine wave, 60 Hz .

2-244
2N2137 thru 2N2146 (continued)

FIGURE 1 - POWER TEMPERATURE DERATING CURVE

70 ..........
60 r--..... ........
50
r....... t- ()JC = 1.2°C/W, MAX
r-..... ~
40 .........
30
r--.....
r-.... ~
20
10
o
-- r-.... . . r-.... ~
25 50 75 100 125
Tc, CASE TEMPERATURE (OC)

2N2137. A; 2N2142. A 2N2138. A; 2N2143. A

FIGURE 2 - ACTIVE REGION 3
SAFE OPERATING AREAS
\ 1\ 1\\1\ y 5001'5

I \ 1\.~ ~ J
500tS

The active region safe operating

area curves indicate le·VeE limits 2
~ \
5ms ~ \ """-OR2501'S
LESS
1\ 5ms
t\ ~ r~~~rs~
R\l\ ~~
to be observed in order to avoid
secondary breakdown. (Secondary
Ims) \ lms
breakdown is independent of tem- 1\
perature and duty cycle.) These
curves do not define operation in dcr'\l\ dC~ 1\
the avalanche region. To insure
1
1\
I~ f\
operation below the maximum
junction temperature, power de-
rating must be observed for both
i'..
steady state and pulse conditions.

0
"-
10 20 30 10 20 30 40 50
VeE, COLLECTOR-EMITTER VOLTAGE IVOLTSI

2N2139.A; 2N2144. A 2N2140.A; 2N2145.A 2N2141.A; 2N2146.A

3

\ \ t\\~ 1'\f\\
"1
~~ v
2
\, 5ms~ ~ i--
5001'5
1

250 1'$-
5ms-
f\\,~
5001'5
i
~~~ts~-
J ~ (\
5ms
5001'5
I
2501'S I--

~ ~ "~
OR LESS
OR LESS
1ms- 1\ 1ms-
1\ 1ms l-

~~
dC~ ~
\
dc~1 ~~ '\
!\
1
dC----r---"
f\-. 1\ i 1\ ......... ~l I l' "
~
I'--- t--- ~
O
10 20 30 40 50 60 70 0 10
I
20 30 40
j"--.. t -
50 60
~
70 80 0 10 20 30
I
40 50 60 70 80 90 100
VeE, COLLECTOR-EMITTER VOLTAGE IVOLTS)

2-245
2N2137 thru 2N2146 (continued)

LARGE SIGNAL CHARACTERISTICS

FIGURE 3 - TRANSCONDUCTANCE FIGURE 4 -INPUT ADMITTANCE
(All TYPES) (2N2137A-2N2141A,2N2137-2N2141)
3.
o J . /V/
200 / / /
2.O~ VeEi2V 100 V ,/ /
./ / 1/ = VeE 2V

i 1.0
TJ-IOO·C/
J ~
0
/
-
is
~
l5 O. S
/ I
TJ 2S· C

i
~
20
10
TJ
I--TJ - 2S· C /

100· /
"/ IY V
/ / TJ S·C

~_o: :l 0.3 J TJ~ -ss·c ~

S.0
.9 0.2 V / I II / L
J /
V
/ 2.0
/ ,
O. I / / I I
o 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0
V,~ BASE-EMITTER VOLTAGE IVOLTS) V... BASE-EMITTER VOLTAGE IVOLTS)

FIGURE 5-INPUT ADMITTANCE FIGURE 6 - NORMALIZED DC CURRENT GAIN

(2N2142A-2N2146A,2N2142-2N2146) (All TYPES!
200 3. 0

100 F=~eE 21v / / / 2.0

_TJ , lOOT -- .......
VeE 2V

50
TJ -IOO·C/
/
1/

/
/
/
/
/
TJ - -SS·C ~
is
1. O_TJ
-TJ
25·
SS·C
-
~ o. 5 " ::-...
~ 5.0 T 25· C j 0: 3 ""'....
O.2
2.0 / / I
/ I I O. I
0.2 0.4 0.6 0.8 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0
V... BASE-EMITTER VOLTAGE IVOLTS) Ie. COLLECTOR CURRENT lAMP)

FIGURE 7- SATURATION REGION FIGURE 8 - SATURATION REGION

(2N2137A-2N2141A,2N2137-2N2141) (2N2142A-2N2146A, 2N2142-2N2146)
3.0 3.0
160 100
140 90
,.0:: 120 80
:$ 100
80
~ 70
60
iB 60
is
~
B
50
40

I
.9
40

I, -'20'mA
~
~
8
.9
30
20
1,-IOmA

0.3 0.4 0.5 0.3 0.4 O.S

Ve~ COUECTOR-EMITTER VOLTAGE IVOLTS) VeE. CQLLECTOR-EMITTER VOLTAGlIVOLTS)

2-246
2N2137 thru 2N2146 (continued)

INPUT & TRANSFER CHARACTERISTICS

BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT DC CURRENT TRANSFER RATIO versus COLLECTOR CURRENT
All Types
1.2 100
VeE:::: 2V VCE = 2V
90

1.0
80
\
~
o '" 70
S
\
2: 0.8
w
'"~ '"w 60
, r'\. 2N2142A·2N2146A -

"'
~

'">
e:i 0.6
,.-
z
~
.... 50
/
~ r-.... /
~

"
~

V
i
~~ 0.4
V
./ ~
<.>
'"
~
40

30

/
~
...............
--
r--..
"-- -
0.2
/ 20
L 2N2137A· 2N2141A

f 10

o o
o o
Ie. COLLECTOR CURRENT (AMPS) Ie. COLLECTOR CURRENT (AMP)

2N2152 thru 2N21 54 (GERMANIUM)

2N21 S6 thru 2N21 58

PNP germanium power transistors for high-power,

CASE 5 high-gain applications in high-reliability industrial
(T0-36) equipment.
MAXIMUM RATINGS
2N2152 2N2153 2N2154
Rating Symbol 2N2156 2N2157 2N2158 Unit

Collector-Emitter Voltage VCEO 30 45 60 Vdc

Collector-Emitter Voltage VCES 45 60 75 Vdc

Collector-Base Voltage VCB 45 60 75 Vdc

Emitter-Base Voltage VEB 25 30 40 Vdc

Collector Current IC 30 Adc

Total Device Dissipation @ TC = 25°C PD 170 Watts

Derate above 25°C 0.5 W/oC

Operating Junction Temperature Range TJ -65 to + 110 °c

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case 0.5 °C/W

°JC

2-247