Photomicrosensor (Transmissive)

EE-SV3 Series
Be sure to read Precautions on page 25.

■ Dimensions ■ Features
Note: All units are in millimeters unless otherwise indicated. • High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aper-
ture, and model with a horizontal sensing aperture are available.
• Solder terminal models:
EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS
• PCB terminal models
Center mark
EE-SV3-B/-SV3-C/-SV3-D/-SV3-G

■ Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rated value
Four,
R1 Four, R1 Emitter Forward current IF 50 mA
(see note 1)
Pulse forward IFP 1A
Two, Four, 0.5
current (see note 2)
Two,
Four, 0.25
3.2±0.2 dia.
Four, 1.5 3.2±0.2 dia. Reverse voltage VR 4V
holes 2.54±0.2
holes
2.54±0.2 Detector Collector–Emit- VCEO 30 V
Cross section AA Cross section AA
ter voltage
Emitter–Collec- VECO ---
Model Aperture (a x b) tor voltage
EE-SV3(-B) 2.1 x 0.5 Collector current IC 20 mA
EE-SV3-C(S) 2.1 x 1.0 Collector dissipa- PC 100 mW
EE-SV3-D(S) 2.1 x 0.2 tion (see note 1)
Internal Circuit EE-SV3-G(S) 0.5 x 2.1 Ambient tem- Operating Topr –25°C to
K C
perature 85°C
Unless otherwise specified, the Storage Tstg –30°C to
tolerances are as shown below. 100°C
Soldering temperature Tsol 260°C
A E Dimensions Tolerance
(see note 3)
3 mm max. ±0.2
Terminal No. Name Note: 1. Refer to the temperature rating chart if the ambient temper-
3 < mm ≤ 6 ±0.24 ature exceeds 25°C.
A Anode
6 < mm ≤ 10 ±0.29 2. The pulse width is 10 μs maximum with a frequency of
K Cathode 100 Hz.
10 < mm ≤ 18 ±0.35
C Collector 3. Complete soldering within 10 seconds.
E Emitter 18 < mm ≤ 30 ±0.42

■ Electrical and Optical Characteristics (Ta = 25°C)

Item Symbol Value Condition
EE-SV3(-B) EE-SV3-C(S) EE-SV3-D(S) EE-SV3-G(S)
Emitter Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wave- λP 940 nm typ. IF = 20 mA
length
Detector Light current IL 0.5 to 14 mA 1 to 28 mA 0.1 mA min. 0.5 to 14 mA IF = 20 mA,
VCE = 10 V
Dark current ID 2 nA typ., 200 nA max. VCE = 10 V,
0 lx
Leakage current ILEAK --- ---
Collector–Emitter satu- VCE (sat) 0.1 V typ., 0.4 V max. --- 0.1 V typ., IF = 20 mA,
rated voltage 0.4 V max. IL = 0.1 mA
Peak spectral sensitivity λP 850 nm typ. VCE = 10 V
wavelength
Rising time tr 4 μs typ. VCC = 5 V,
Falling time tf 4 μs typ. RL = 100 Ω,
IL = 5 mA

114 EE-SV3 Series Photomicrosensor (Transmissive)

■ Engineering Data
Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current
Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical)

Collector dissipation PC (mW)

Ta = 25°C

Forward current IF (mA)

Forward current IF (mA)

IF VCE = 10 V

Light current IL (mA)

Ta = −30°C
PC Ta = 25°C
Ta = 70°C

Forward voltage VF (V) Forward current IF (mA)

Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient
Voltage Characteristics (EE-SV3(-B)) ent Temperature Characteristics Temperature Characteristics
(Typical) (Typical)
Ta = 25°C IF = 20 mA VCE = 10 V
Relative light current IL (%)

VCE = 5 V 0 lx

Dark current ID (nA)

Light current IL (mA)

IF = 50 mA

IF = 40 mA

IF = 30 mA

IF = 20 mA

IF = 10 mA

Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)

Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics
ance Characteristics (Typical) (EE-SV3-D(S)) (EE-SV3(-B))
IF = 20 mA
Relative light current IL (%)

VCC = 5 V IF = 20 mA
Relative light current IL (%)

Ta = 25°C VCE = 10 V VCE = 10 V

Ta = 25°C
Response time tr, tf (μs)

Ta = 25°C
Center of optical axis Center of optical axis

Load resistance RL (kΩ) Distance d (mm) Distance d (mm)

Sensing Position Characteristics Sensing Position Characteristics Response Time Measurement

(EE-SV3-G(S)) (EE-SV3-C(S)) Circuit

IF = 20 mA IF = 20 mA
Relative light current IL (%)

Relative light current IL (%)

VCE = 10 V VCE = 10 V Input

Ta = 25°C Ta = 25°C
− Center of optical axis 90 %
Output 10 %
0
+
d
Input
Center of optical axis

Output

Distance d (mm) Distance d (mm)

EE-SV3 Series Photomicrosensor (Transmissive) 115