Si photodiode

S9032-02

RGB color sensor

The S9032-02 is a color sensor molded into a plastic package having a 3-channel (RGB) photodiode sensitive to the blue (λp=460
nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9032-02 has a 3-segment (RGB) circular photosensi-
tive area of ϕ2 mm.

Features Applications

3-channel (RGB) Si photodiode Color adjustment for LED back light system for LCD
Surface-mount small plastic package Color adjustment for LCD projector
Spectral response range close to the human eye sensitivity Color tester
No sensitivity in the near IR region Color detection
Photosensitive area: 3-segment (RGB) circular
photosensitive area of ϕ2 mm

Absolute maximum ratings

Parameter Symbol Value Unit
Reverse voltage VR max 10 V
Operating temperature Topr -25 to +85 °C
Storage temperature Tstg -40 to +85 °C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.

Electrical and optical characteristics (Ta= 25 °C, per element )

Parameter Symbol Condition Min. Typ. Max. Unit
Blue - 400 to 540 -
Spectral response range λ Green - 480 to 600 - nm
Red - 590 to 720 -
Blue - 460 -
Peak sensitivity wavelength λp Green - 540 - nm
Red - 620 -
Blue 0.13 0.18 -
Photosensitivity S λ=λp Green 0.18 0.23 - A/W
Red 0.11 0.16 -
VR=1 V
Dark current ID - 5 100 pA
All elements
Temperature coefficient of ID TCID - 1.12 - times/°C
VR=0 V, RL=1 kΩ
Rise time tr - 0.2 1.0 μs
10 to 90%
VR=0 V
Terminal capacitance Ct - 40 80 pF
f=10 kHz

This product does not support lead-free soldering. For details on reflow soldering conditions, please contact our sales office.

www.hamamatsu.com 1
 Si photodiode S9032-02

Spectral response Linearity

(Typ. Ta=25 °C) (Typ. Ta=25 °C, VR=0 V, 2856 K)
0.25 10 μA
Green
Blue
0.20
1 μA
Photosensitivity (A/W)

Short circuit current

Red

0.15
Red
100 nA

0.10

Green
10 nA
0.05 Blue

0 1 nA
300 400 500 600 700 800 10 100 1000 10000

Wavelength (nm) Illuminance (lx)

KSPDB0246EA KSPDB0326EA

Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C) (Typ. Ta=25 °C)
1 nA 1 nF

100 pA
Terminal capacitance

100 pF
Dark current

10 pA

10 pF
1 pA

100 fA 1 pF
0.01 0.1 1 10 100 0.1 1 10 100

Reverse voltage (V) Reverse voltage (V)

KSPDB0218EA KSPDB0219EA

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 Si photodiode S9032-02

Dimensional outline (uint: mm)

Photosensitive
area
Filter
Photosensitive
3.2 × 3.2 × 0.75 t

(6 ×) 0.5
4.1 ± 0.2 surface
(Including burr)

1.27

(Including burr)

(2 ×) 10°

(2 ×) 5°
5.0 ± 0.2
R B

4.7*

4.8*
G

1.27
1.5 ± 0.4 4.0* 1.5 ± 0.4 0.4
0.8
7.0 ± 0.3 1.8
0.7 ± 0.3 0.7 ± 0.3
Photosensitive
(2 ×) 10° surface Anode (red)
0.1 ± 0.1

Cathode common
Anode (green)
0.25

N/C
Cathode common
Anode (blue)

(2 ×) 5° Tolerance unless otherwise

ϕ2.0 depth 0.15 max. noted: ±0.1, ±2°
Shaded area indicates burr.
Chip position accuracy with
respect to the package
dimensions marked *
X, Y≤±0.2, θ≤±2°
Lead surface finish: silver plating
Packing: stick (50 pcs/stick)
KSPDA0162EB

Note: If excessive vibration is continuously applied to the glass filter, there is a risk that the filter may come off, so secure the glass fil-
ter with a holder.

Application example
Optical feedback of backlight for TFT-LCD using a color sensor module C9303-04 (integrated with the S9032-02)

C9303-04 Color
controller

Luminance/
light coordinate
setting

Mixing light guide &

LCD panel Red driver

Green driver

LED LIGHT SOURCE Blue driver

LED: Made by Lumileds (LUXEON), http://www.lumileds.com/

KACCC0289EA

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 Si photodiode S9032-02

Line-up of RGB color sensors

Peak sensitivity
Photosensitive area Package
Type no. Type wavelength Photosensitivity Photo
(mm) (mm) (nm)
4 × 4.8 × 1.8t B 460 B 0.18 (A/W) [λ=460 nm]
S9032-02 Photodiode ϕ2.0 6 pin G 540 G 0.23 (A/W) [λ=540 nm]
(filter 0.75t) R 620 R 0.16 (A/W) [λ=620 nm]
3 × 4 × 1.3t B 460 B 0.18 (A/W) [λ=460 nm]
S9702 Photodiode 1.0 × 1.0 4 pin G 540 G 0.23 (A/W) [λ=540 nm]
(filter 0.75t) R 620 R 0.16 (A/W) [λ=620 nm]
3 × 1.6 × 1.0t B 460 B 0.2 (A/W) [λ=460 nm]
S10917-35GT Photodiode 1.0 × 1.0 COB G 540 G 0.23 (A/W) [λ=540 nm]
(on-chip filter) R 620 R 0.17 (A/W) [λ=620 nm]
3 × 1.6 × 1.0t B 0.21 (A/W) [λ=460 nm]
S10942-01CT Photodiode 1.0 × 1.0 COB G 0.25 (A/W) [λ=540 nm]
*
(on-chip filter) R 0.45 (A/W) [λ=640 nm]
4 × 4.8 × 1.8t B 465 B 0.21 (LSB/lx) B 1.9 (LSB/lx)

High
Digital

Low
S9706 1.2 × 1.2 6 pin G 540 G 0.45 (LSB/lx) G 4.1 (LSB/lx)
photo IC
(filter 0.75t) R 615 R 0.64 (LSB/lx) R 5.8 (LSB/lx)
3.43 × 3.8 × 1.6t B 0.3 (LSB/lx) B 2.6 (LSB/lx)

High
Digital
Low
S11012-01CR 1.2 × 1.2 COB * G 0.6 (LSB/lx) G 5.3 (LSB/lx)
photo IC
(on-chip filter) R 1.4 (LSB/lx) R 12.9 (LSB/lx)
I2C B 460 B 4.4 (count/lx) B 44.8 (count/lx)
3 × 4.2 ×1.3t G 530 G 8.3 (count/lx) G 85.0 (count/lx)
S11059-02DT

High
compatible
Low

0.56 × 1.22 10 pin

/-03DS color R 615 R 11.2 (count/lx) R 117.0 (count/lx)
(on-chip filter)
sensor IR 855 IR 3.0 (count/lx) IR 30.0 (count/lx)
* Refer to the spectral response of each product’s datasheet.

Related information
www.hamamatsu.com/sp/ssd/doc_en.html

Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic package products
∙ Surface mount type products

Information described in this material is current as of February, 2016.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
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Cat. No. KSPD1067E10 Feb. 2016 DN