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Isc TYN1225: Thyristors

This document provides information about the TYN1225 thyristor from INCHANGE Semiconductor, including: 1) It describes the TYN1225 as having TO-220 packaging, long-term stability, and being designed for line frequency applications with minimal lot-to-lot variations. 2) It lists the thyristor's applications as switching applications and line rectifying at 50/60 Hz. 3) It provides the thyristor's maximum ratings and electrical characteristics.

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122 views2 pages

Isc TYN1225: Thyristors

This document provides information about the TYN1225 thyristor from INCHANGE Semiconductor, including: 1) It describes the TYN1225 as having TO-220 packaging, long-term stability, and being designed for line frequency applications with minimal lot-to-lot variations. 2) It lists the thyristor's applications as switching applications and line rectifying at 50/60 Hz. 3) It provides the thyristor's maximum ratings and electrical characteristics.

Uploaded by

Heru susanto
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc Thyristors TYN1225

DESCRIPTION
·With TO-220 packaging
·Long-term stability
·Thyristor for line frequency
·Planar passivated chip
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation

APPLICATIONS
·Switching applications
·Line rectifying 50/60 Hz

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER MIN UNIT

VDRM Repetitive peak off-state voltage 1200 V

VRRM Repetitive peak reverse voltage 1200 V

IT(AV) Average forward current Tc=96℃ 16 A

IT(RMS) RMS on-state current 25 A


Surge non-repetitive on-state current 50HZ 260
ITSM A
( 1/2 cycle,sine wave;Tc=45℃ ) 60HZ 250
PG(AV) Average gate power dissipation 0.5 W

Tj Operating junction temperature -40~125 ℃

Tstg Storage temperature -40~150 ℃

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)


SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

IRRM Repetitive peak reverse current VRM=VRRM Tj=25℃ 0.01


mA
IDRM Repetitive peak off-state current VDM=VDRM Tj=125℃ 4

VTM On-state voltage ITM= 50A;tp=380μs 1.6 V

IGT Gate-trigger current VD = 12V; RL=33Ω 40 mA

VGT Gate-trigger voltage VD = 12V; RL=33Ω 1.5 V

Rth(j-c) Thermal resistance Junction to case 1.3 ℃/W

isc website：www.iscsemi.com isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Thyristors TYN1225

Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com isc & iscsemi is registered trademark

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