DL150/D

Rev. 2, May-2001

TVS/Zener Device Data

TVS/Zener Device Data

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further
notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or
authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC
products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of
the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

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EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781
*Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales
Representative

DL150/D 05/01
DL150
REV 2
 TVS/Zeners Device Data

Transient Voltage Suppressors and Zener Diodes

DL150/D
Rev. 2, May–2001

 SCILLC, 2001
Previous Edition  1994
“All Rights Reserved’’
 This book presents technical data for the broad line of ON Semiconductor Transient Voltage Suppressors and Zener Diodes.
Complete specifications for the individual devices are provided in the form of data sheets. A comprehensive Selector Guide
and Industry Cross Reference Guide are included to simplify the task of choosing the best set of components required for a
specific application. For additional information, please visit our website at: http://onsemi.com
Although information in this book has been carefully checked, no responsibility for inaccuracies can be assumed by
ON Semiconductor. Please consult your nearest ON Semiconductor sales office for further assistance regarding any aspect of
ON Semiconductor products.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment: CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
P.O. Box 5163, Denver, Colorado 80217 USA Email: ONlit–spanish@hibbertco.com
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada then Dial 866–297–9322
Email: ONlit@hibbertco.com
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
N. American Technical Support: 800–282–9855 Toll Free USA/Canada Toll Free from Hong Kong & Singapore:
001–800–4422–3781
EUROPE: LDC for ON Semiconductor – European Support Email: ONlit–asia@hibbertco.com
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–german@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Email: ONlit–french@hibbertco.com Phone: 81–3–5740–2700
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: r14525@onsemi.com
Email: ONlit@hibbertco.com ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 For additional information, please contact your local
*Available from Germany, France, Italy, UK, Ireland Sales Representative.

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 ON SEMICONDUCTOR DEVICE CLASSIFICATIONS

In an effort to provide up–to–date information to the customer regarding the status of any given device, ON Semiconductor
has classified all devices into three categories: Preferred devices, Current products and Not Recommended for New Design
products.
A Preferred type is a device which is recommended as a first choice for future use. These devices are “preferred” by virtue
of their performance, price, functionality, or combination of attributes which offer the overall “best” value to the customer. This
category contains both advanced and mature devices which will remain available for the foreseeable future.

“Preferred devices” are denoted below the device part numbers on the individual data sheets.

Device types identified as “current” may not be a first choice for new designs, but will continue to be available because of
the popularity and/or standardization or volume usage in current production designs. These products can be acceptable for new
designs but the preferred types are considered better alternatives for long term usage.

Any device that has not been identified as a “preferred device” is a “current” device.

This data book does not contain any “Not Recommended for New Design” devices.

Surmetic and MOSORB are trademarks of Semiconductor Components Industries, LLC (SCILLC).

Thermal Clad is a trademark of the Bergquist Company.

All brand names and product names appearing in this document are registered trademarks or trademarks of their respective
holders.

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Table of Contents

Page Page
Chapter 1: Alphanumeric Index of Part Numbers . . . . 5 Chapter 7: Zener Voltage Regulator Diodes –
Surface Mounted Data Sheets . . . . . . . . . . . . . . . . . . 253
Chapter 2: Selector Guide for Transient MM3Z2V4T1 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . 254
Voltage Suppressors and Zener Diodes . . . . . . . . . . 13 BZX84C2V4LT1 Series . . . . . . . . . . . . . . . . . . . . . . . . 259
MMBZ5221BLT1 Series . . . . . . . . . . . . . . . . . . . . . . . 264
Chapter 3: Transient Voltage Suppressors – MMSZ5221BT1 Series . . . . . . . . . . . . . . . . . . . . . . . . 269
Axial Leaded Data Sheets . . . . . . . . . . . . . . . . . . . . . . . 43 MMSZ4678T1 Series . . . . . . . . . . . . . . . . . . . . . . . . . . 274
P6KE6.8A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 MMSZ2V4T1 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . 279
P6KE6.8CA Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 1PMT5920BT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . 283
1N6267A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 1SMA5913BT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . 287
SA5.0A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 1SMB5913BT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . 292
SA5.0CA Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
1.5KE6.8CA Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 Chapter 8: Surface Mount Information and
1N5908 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 Packaging Specifications . . . . . . . . . . . . . . . . . . . . . . 297
1N6373 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 Footprints for Soldering . . . . . . . . . . . . . . . . . . . . . . . . 302
1N6382 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Chapter 9: Package Outline Dimensions . . . . . . . . . 311
Chapter 4: Transient Voltage Suppressors –
Surface Mounted Data Sheets . . . . . . . . . . . . . . . . . . . 93 Chapter 10: Technical Information,
1PMT5.0AT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 Application Notes and Articles . . . . . . . . . . . . . . . . . . 321
1SMA5.0AT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98 Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . 323
1SMA10CAT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . . 102 Zener Diode Fabrication Techniques . . . . . . . . . . . . . 328
1SMB5.0AT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 332
P6SMB6.8AT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . 111 Zener Diode Characteristics . . . . . . . . . . . . . . . . . . . . 338
1SMB10CAT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . . 117 Temperature Compensated Zeners . . . . . . . . . . . . . . 350
P6SMB11CAT3 Series . . . . . . . . . . . . . . . . . . . . . . . . 122 Basic Voltage Regulation Using Zener Diodes . . . . 354
1SMC5.0AT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . . 127 Zener Protective Circuits and Techniques:
1.5SMC6.8AT3 Series . . . . . . . . . . . . . . . . . . . . . . . . . 133 Basic Design Considerations . . . . . . . . . . . . . . . . 364
Zener Voltage Sensing Circuits and Applications . . 374
Chapter 5: Transient Voltage Suppressor Arrays – Miscellaneous Applications of
Surface Mounted Data Sheets . . . . . . . . . . . . . . . . . . 139 Zener Type Devices . . . . . . . . . . . . . . . . . . . . . . . . 381
MMBZ5V6ALT1 Series . . . . . . . . . . . . . . . . . . . . . . . . 140 Transient Voltage Suppression . . . . . . . . . . . . . . . . . 383
MMBZ15VDLT1, MMBZ27VCLT1 . . . . . . . . . . . . . . . 146 AN784 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 402
MMQA5V6T1 Series . . . . . . . . . . . . . . . . . . . . . . . . . . 150 AN843 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 404
MSQA6V1W5T2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155 Design Considerations and Performance of
DF6A6.8FUT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158 Temperature Compensated Zener Diodes . . . . . 417
SMS05T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 MOSORBs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 422
AR450 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 426
Chapter 6: Zener Voltage Regulator Diodes – Measurement of Zener Voltage to Thermal
Axial Leaded Data Sheets . . . . . . . . . . . . . . . . . . . . . . 163 Equilibrium with Pulsed Test Current . . . . . . . . . . 439
1N4370A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 Sales Office List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 447
1N957B Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173 Standard Document Type Definitions . . . . . . . . . . . . 448
1N5985B Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
BZX79C2V4RL Series . . . . . . . . . . . . . . . . . . . . . . . . . 189
1N4678 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
1N5221B Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
1N4728A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
BZX85C3V3RL Series . . . . . . . . . . . . . . . . . . . . . . . . . 221
1N5913B Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228
3EZ4.3D5 Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 234
MZP4729A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
1N5333B Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 246

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 CHAPTER 1
Alphanumeric Index of Part Numbers

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DEVICE PAGE DEVICE PAGE DEVICE PAGE DEVICE PAGE
1.5KE100A 59 1.5KE33A 59 1.5SMC39AT3 135 1N4711 199
1.5KE100CA 74 1.5KE33CA 74 1.5SMC43AT3 135 1N4728A 216
1.5KE10A 59 1.5KE36A 59 1.5SMC47AT3 135 1N4729A 216
1.5KE10CA 74 1.5KE36CA 74 1.5SMC51AT3 135 1N4730A 216
1.5KE110A 59 1.5KE39A 59 1.5SMC56AT3 135 1N4731A 216
1.5KE110CA 74 1.5KE39CA 74 1.5SMC6.8AT3 135 1N4732A 216
1.5KE11A 59 1.5KE43A 59 1.5SMC62AT3 135 1N4733A 216
1.5KE11CA 74 1.5KE43CA 74 1.5SMC68AT3 135 1N4734A 216
1.5KE120A 59 1.5KE47A 59 1.5SMC7.5AT3 135 1N4735A 216
1.5KE120CA 74 1.5KE47CA 74 1.5SMC75AT3 135 1N4736A 216
1.5KE12A 59 1.5KE51A 59 1.5SMC8.2AT3 135 1N4737A 216
1.5KE12CA 74 1.5KE51CA 74 1.5SMC82AT3 135 1N4738A 216
1.5KE130A 59 1.5KE56A 59 1.5SMC9.1AT3 135 1N4739A 216
1.5KE130CA 74 1.5KE56CA 74 1.5SMC91AT3 135 1N4740A 216
1.5KE13A 59 1.5KE6.8A 59 1N4370A 166 1N4741A 216
1.5KE13CA 74 1.5KE6.8CA 74 1N4371A 166 1N4742A 216
1.5KE150A 59 1.5KE62A 59 1N4372A 166 1N4743A 216
1.5KE150CA 74 1.5KE62CA 74 1N4678 199 1N4744A 216
1.5KE15A 59 1.5KE68A 59 1N4679 199 1N4745A 216
1.5KE15CA 74 1.5KE68CA 74 1N4680 199 1N4746A 217
1.5KE160A 59 1.5KE7.5A 59 1N4681 199 1N4747A 217
1.5KE160CA 74 1.5KE7.5CA 74 1N4682 199 1N4748A 217
1.5KE16A 59 1.5KE75A 59 1N4683 199 1N4749A 217
1.5KE16CA 74 1.5KE75CA 74 1N4684 199 1N4750A 217
1.5KE170A 59 1.5KE8.2A 59 1N4685 199 1N4751A 217
1.5KE170CA 74 1.5KE8.2CA 74 1N4686 199 1N4752A 217
1.5KE180A 59 1.5KE82A 59 1N4687 199 1N4753A 217
1.5KE180CA 74 1.5KE82CA 74 1N4688 199 1N4754A 217
1.5KE18A 59 1.5KE9.1A 59 1N4689 199 1N4755A 217
1.5KE18CA 74 1.5KE9.1CA 74 1N4690 199 1N4756A 217
1.5KE200A 59 1.5KE91A 59 1N4691 199 1N4757A 217
1.5KE200CA 74 1.5KE91CA 74 1N4692 199 1N4758A 217
1.5KE20A 59 1.5SMC10AT3 135 1N4693 199 1N4759A 217
1.5KE20CA 74 1.5SMC11AT3 135 1N4694 199 1N4760A 217
1.5KE220A 59 1.5SMC12AT3 135 1N4695 199 1N4761A 217
1.5KE220CA 74 1.5SMC13AT3 135 1N4696 199 1N4762A 217
1.5KE22A 59 1.5SMC15AT3 135 1N4697 199 1N4763A 217
1.5KE22CA 74 1.5SMC16AT3 135 1N4698 199 1N5221B 207
1.5KE24A 59 1.5SMC18AT3 135 1N4699 199 1N5222B 207
1.5KE24CA 74 1.5SMC20AT3 135 1N4700 199 1N5223B 207
1.5KE250A 59 1.5SMC22AT3 135 1N4701 199 1N5224B 207
1.5KE250CA 74 1.5SMC24AT3 135 1N4702 199 1N5225B 207
1.5KE27A 59 1.5SMC27AT3 135 1N4703 199 1N5226B 207
1.5KE27CA 74 1.5SMC30AT3 135 1N4704 199 1N5227B 207
1.5KE30A 59 1.5SMC33AT3 135 1N4705 199 1N5228B 207
1.5KE30CA 74 1.5SMC36AT3 135 1N4707 199 1N5229B 207

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DEVICE PAGE DEVICE PAGE DEVICE PAGE DEVICE PAGE
1N5230B 207 1N5338B 248 1N5384B 249 1N5991B 182
1N5231B 207 1N5339B 248 1N5385B 249 1N5992B 182
1N5232B 207 1N5340B 248 1N5386B 249 1N5993B 182
1N5233B 207 1N5341B 248 1N5387B 249 1N5994B 182
1N5234B 207 1N5342B 248 1N5388B 249 1N5995B 182
1N5235B 207 1N5343B 248 1N5908 78 1N5996B 182
1N5236B 208 1N5344B 248 1N5913B 230 1N5997B 182
1N5237B 208 1N5345B 248 1N5917B 230 1N5998B 182
1N5238B 208 1N5346B 248 1N5919B 230 1N5999B 182
1N5239B 208 1N5347B 248 1N5920B 230 1N6000B 182
1N5240B 208 1N5348B 248 1N5921B 230 1N6001B 182
1N5241B 208 1N5349B 248 1N5923B 230 1N6002B 182
1N5242B 208 1N5350B 248 1N5924B 230 1N6004B 182
1N5243B 208 1N5351B 248 1N5925B 230 1N6007B 182
1N5244B 208 1N5352B 248 1N5926B 230 1N6373 84
1N5245B 208 1N5353B 248 1N5927B 230 1N6374 84
1N5246B 208 1N5354B 248 1N5929B 230 1N6375 84
1N5247B 208 1N5355B 248 1N5930B 230 1N6376 84
1N5248B 208 1N5356B 248 1N5931B 230 1N6377 84
1N5249B 208 1N5357B 248 1N5932B 230 1N6378 84
1N5250B 208 1N5358B 248 1N5933B 230 1N6379 84
1N5251B 208 1N5359B 248 1N5934B 230 1N6380 84
1N5252B 208 1N5360B 248 1N5935B 230 1N6381 84
1N5253B 208 1N5361B 248 1N5936B 230 1N6382 89
1N5254B 208 1N5362B 248 1N5937B 230 1N6383 89
1N5255B 208 1N5363B 249 1N5938B 230 1N6384 89
1N5256B 208 1N5364B 249 1N5940B 230 1N6385 89
1N5257B 208 1N5365B 249 1N5941B 230 1N6386 89
1N5258B 208 1N5366B 249 1N5942B 230 1N6387 89
1N5259B 208 1N5367B 249 1N5943B 230 1N6388 89
1N5260B 208 1N5368B 249 1N5944B 230 1N6389 89
1N5261B 208 1N5369B 249 1N5945B 230 1N746A 166
1N5262B 208 1N5370B 249 1N5946B 230 1N747A 166
1N5263B 208 1N5371B 249 1N5947B 230 1N748A 166
1N5264B 208 1N5372B 249 1N5948B 230 1N749A 166
1N5265B 208 1N5373B 249 1N5950B 230 1N750A 166
1N5266B 208 1N5374B 249 1N5951B 230 1N751A 166
1N5267B 208 1N5375B 249 1N5952B 230 1N752A 166
1N5268B 208 1N5376B 249 1N5953B 230 1N753A 166
1N5269B 208 1N5377B 249 1N5954B 230 1N754A 166
1N5270B 208 1N5378B 249 1N5955B 230 1N755A 166
1N5333B 248 1N5379B 249 1N5956B 230 1N756A 166
1N5334B 248 1N5380B 249 1N5985B 182 1N757A 166
1N5335B 248 1N5381B 249 1N5987B 182 1N758A 166
1N5336B 248 1N5382B 249 1N5988B 182 1N759A 166
1N5337B 248 1N5383B 249 1N5990B 182 1N957B 174

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DEVICE PAGE DEVICE PAGE DEVICE PAGE DEVICE PAGE
1N958B 174 1PMT5933BT3 284 1SMA45CAT3 103 1SMA60CAT3 103
1N959B 174 1PMT5934BT3 284 1SMA48AT3 100 1SMA64AT3 100
1N960B 174 1PMT5935BT3 284 1SMA48CAT3 103 1SMA64CAT3 103
1N961B 174 1PMT5936BT3 284 1SMA5.0AT3 100 1SMA7.0AT3 100
1N962B 174 1PMT5939BT3 284 1SMA51AT3 100 1SMA7.5AT3 100
1N963B 174 1PMT7.0AT3 284 1SMA51CAT3 103 1SMA70AT3 100
1N964B 174 1PMT59BT3 95 1SMA54AT3 100 1SMA70CAT3 103
1N965B 174 1SMA10AT3 100 1SMA54CAT3 103 1SMA75AT3 100
1N966B 174 1SMA10CAT3 103 1SMA58AT3 100 1SMA75CAT3 103
1N967B 174 1SMA11AT3 100 1SMA58CAT3 103 1SMA78AT3 100
1N968B 174 1SMA11CAT3 103 1SMA5913BT3 289 1SMA78CAT3 103
1N969B 174 1SMA12AT3 100 1SMA5914BT3 289 1SMA8.0AT3 100
1N970B 174 1SMA12CAT3 103 1SMA5915BT3 289 1SMA8.5AT3 100
1N971B 174 1SMA13AT3 100 1SMA5916BT3 289 1SMA9.0AT3 100
1N972B 174 1SMA13CAT3 103 1SMA5917BT3 289 1SMB100AT3 107
1N973B 174 1SMA14AT3 100 1SMA5918BT3 289 1SMB10AT3 107
1N974B 174 1SMA14CAT3 103 1SMA5919BT3 289 1SMB10CAT3 118
1N975B 174 1SMA15AT3 100 1SMA5920BT3 289 1SMB110AT3 107
1N978B 174 1SMA15CAT3 103 1SMA5921BT3 289 1SMB11AT3 107
1N979B 174 1SMA16AT3 100 1SMA5922BT3 289 1SMB11CAT3 118
1N982B 174 1SMA16CAT3 103 1SMA5923BT3 289 1SMB120AT3 107
1PMT12AT3 95 1SMA17AT3 100 1SMA5924BT3 289 1SMB12AT3 107
1PMT16AT3 95 1SMA17CAT3 103 1SMA5925BT3 289 1SMB12CAT3 118
1PMT18AT3 95 1SMA18AT3 100 1SMA5926BT3 289 1SMB130AT3 107
1PMT22AT3 95 1SMA18CAT3 103 1SMA5927BT3 289 1SMB13AT3 107
1PMT24AT3 95 1SMA20AT3 100 1SMA5928BT3 289 1SMB13CAT3 118
1PMT26AT3 95 1SMA20CAT3 103 1SMA5929BT3 289 1SMB14AT3 107
1PMT28AT3 95 1SMA22AT3 100 1SMA5930BT3 289 1SMB14CAT3 118
1PMT30AT3 95 1SMA22CAT3 103 1SMA5931BT3 289 1SMB150AT3 107
1PMT33AT3 95 1SMA24AT3 100 1SMA5932BT3 289 1SMB15AT3 107
1PMT36AT3 95 1SMA24CAT3 103 1SMA5933BT3 289 1SMB15CAT3 118
1PMT40AT3 95 1SMA26AT3 100 1SMA5934BT3 289 1SMB160AT3 107
1PMT48AT3 95 1SMA26CAT3 103 1SMA5935BT3 289 1SMB16AT3 107
1PMT5.0AT3 95 1SMA28AT3 100 1SMA5936BT3 289 1SMB16CAT3 118
1PMT51AT3 95 1SMA28CAT3 103 1SMA5937BT3 289 1SMB170AT3 107
1PMT58AT3 95 1SMA30AT3 100 1SMA5938BT3 289 1SMB17AT3 107
1PMT5920BT3 284 1SMA30CAT3 103 1SMA5939BT3 289 1SMB17CAT3 118
1PMT5219BT3 284 1SMA33AT3 100 1SMA5940BT3 289 1SMB18AT3 107
1PMT5922BT3 284 1SMA33CAT3 103 1SMA5941BT3 289 1SMB18CAT3 118
1PMT5923BT3 284 1SMA36AT3 100 1SMA5942BT3 289 1SMB20AT3 107
1PMT5924BT3 284 1SMA36CAT3 103 1SMA5943BT3 289 1SMB20CAT3 118
1PMT5925BT3 284 1SMA40AT3 100 1SMA5944BT3 289 1SMB22AT3 107
1PMT5927BT3 284 1SMA40CAT3 103 1SMA5945BT3 289 1SMB22CAT3 118
1PMT5929BT3 284 1SMA43AT3 100 1SMA6.0AT3 100 1SMB24AT3 107
1PMT5930BT3 284 1SMA43CAT3 103 1SMA6.5AT3 100 1SMB24CAT3 118
1PMT5931BT3 284 1SMA45AT3 100 1SMA60AT3 100 1SMB26AT3 107

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DEVICE PAGE DEVICE PAGE DEVICE PAGE DEVICE PAGE
1SMB26CAT3 118 1SMB5935BT3 294 1SMC15AT3 129 BZX79C10RL 190
1SMB28AT3 107 1SMB5936BT3 294 1SMC16AT3 129 BZX79C12RL 190
1SMB28CAT3 118 1SMB5937BT3 294 1SMC17AT3 129 BZX79C15RL 190
1SMB30AT3 107 1SMB5938BT3 294 1SMC18AT3 129 BZX79C16RL 190
1SMB30CAT3 118 1SMB5939BT3 294 1SMC20AT3 129 BZX79C18RL 190
1SMB33AT3 107 1SMB5940BT3 294 1SMC22AT3 129 BZX79C22RL 190
1SMB33CAT3 118 1SMB5941BT3 294 1SMC24AT3 129 BZX79C24RL 190
1SMB36AT3 107 1SMB5942BT3 294 1SMC26AT3 129 BZX79C27RL 190
1SMB36CAT3 118 1SMB5943BT3 294 1SMC28AT3 129 BZX79C2V4RL 190
1SMB40AT3 107 1SMB5944BT3 294 1SMC30AT3 129 BZX79C2V7RL 190
1SMB40CAT3 118 1SMB5945BT3 294 1SMC33AT3 129 BZX79C30RL 190
1SMB43AT3 107 1SMB5946BT3 294 1SMC36AT3 129 BZX79C33RL 190
1SMB43CAT3 118 1SMB5947BT3 294 1SMC40AT3 129 BZX79C3V0RL 190
1SMB45AT3 107 1SMB5948BT3 294 1SMC43AT3 129 BZX79C3V3RL 190
1SMB45CAT3 118 1SMB5949BT3 294 1SMC45AT3 129 BZX79C3V6RL 190
1SMB48AT3 107 1SMB5950BT3 294 1SMC48AT3 129 BZX79C3V9RL 190
1SMB48CAT3 118 1SMB5951BT3 294 1SMC5.0AT3 129 BZX79C4V7RL 190
1SMB5.0AT3 107 1SMB5952BT3 294 1SMC51AT3 129 BZX79C5V1RL 190
1SMB51AT3 107 1SMB5953BT3 294 1SMC54AT3 129 BZX79C5V6RL 190
1SMB51CAT3 118 1SMB5954BT3 294 1SMC58AT3 129 BZX79C6V2RL 190
1SMB54AT3 107 1SMB5955BT3 294 1SMC6.0AT3 129 BZX79C6V8RL 190
1SMB54CAT3 118 1SMB5956BT3 294 1SMC6.5AT3 129 BZX79C7V5RL 190
1SMB58AT3 107 1SMB6.0AT3 107 1SMC60AT3 129 BZX79C8V2RL 190
1SMB58CAT3 118 1SMB6.5AT3 107 1SMC64AT3 129 BZX84C10LT1 261
1SMB5913BT3 294 1SMB60AT3 107 1SMC7.0AT3 129 BZX84C11LT1 261
1SMB5914BT3 294 1SMB60CAT3 118 1SMC7.5AT3 129 BZX84C12LT1 261
1SMB5915BT3 294 1SMB64AT3 107 1SMC70AT3 129 BZX84C13LT1 261
1SMB5916BT3 294 1SMB64CAT3 118 1SMC75AT3 129 BZX84C15LT1 261
1SMB5917BT3 294 1SMB7.0AT3 107 1SMC78AT3 129 BZX84C16LT1 261
1SMB5918BT3 294 1SMB7.5AT3 107 1SMC8.0AT3 129 BZX84C18LT1 261
1SMB5919BT3 294 1SMB70AT3 107 1SMC8.5AT3 129 BZX84C20LT1 261
1SMB5920BT3 294 1SMB70CAT3 118 1SMC9.0AT3 129 BZX84C22LT1 261
1SMB5921BT3 294 1SMB75AT3 107 3EZ10D5 236 BZX84C24LT1 261
1SMB5922BT3 294 1SMB75CAT3 118 3EZ13D5 236 BZX84C27LT1 261
1SMB5923BT3 294 1SMB78AT3 107 3EZ15D5 236 BZX84C2V4LT1 261
1SMB5924BT3 294 1SMB78CAT3 118 3EZ16D5 236 BZX84C2V7LT1 261
1SMB5925BT3 294 1SMB8.0AT3 107 3EZ18D5 236 BZX84C30LT1 261
1SMB5926BT3 294 1SMB8.5AT3 107 3EZ220D5 236 BZX84C33LT1 261
1SMB5927BT3 294 1SMB85AT3 107 3EZ240D5 236 BZX84C36LT1 261
1SMB5928BT3 294 1SMB9.0AT3 107 3EZ24D5 236 BZX84C39LT1 261
1SMB5929BT3 294 1SMB90AT3 107 3EZ330D5 236 BZX84C3V0LT1 261
1SMB5930BT3 294 1SMC10AT3 129 3EZ36D5 236 BZX84C3V3LT1 261
1SMB5931BT3 294 1SMC11AT3 129 3EZ39D5 236 BZX84C3V6LT1 261
1SMB5932BT3 294 1SMC12AT3 129 3EZ4.3D5 236 BZX84C3V9LT1 261
1SMB5933BT3 294 1SMC13AT3 129 3EZ6.2D5 236 BZX84C43LT1 261
1SMB5934BT3 294 1SMC14AT3 129 3EZ8.2D5 236 BZX84C47LT1 261

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DEVICE PAGE DEVICE PAGE DEVICE PAGE DEVICE PAGE
BZX84C4V3LT1 261 ICTE–12 84 MM3Z8V2T1 256 MMBZ5256BLT1 266
BZX84C4V7LT1 261 ICTE–12C 89 MM3Z9V1T1 256 MMBZ5257BLT1 266
BZX84C51LT1 261 ICTE–15 84 MMBZ10VALT1 140 MMBZ5258BLT1 266
BZX84C56LT1 261 ICTE–15C 89 MMBZ12VALT1 140 MMBZ5259BLT1 266
BZX84C5V1LT1 261 ICTE–18 84 MMBZ15VALT1 140 MMBZ5260BLT1 266
BZX84C5V6LT1 261 ICTE–18C 89 MMBZ15VDLT1 146 MMBZ5261BLT1 266
BZX84C62LT1 261 ICTE–22 84 MMBZ18VALT1 140 MMBZ5262BLT1 266
BZX84C68LT1 261 ICTE–22C 89 MMBZ20VALT1 140 MMBZ5263BLT1 266
BZX84C6V2LT1 261 ICTE–36 84 MMBZ27VALT1 140 MMBZ5264BLT1 266
BZX84C6V8LT1 261 ICTE–36C 89 MMBZ27VCLT1 146 MMBZ5265BLT1 266
BZX84C75LT1 261 ICTE–5 84 MMBZ33VALT1 140 MMBZ5266BLT1 266
BZX84C7V5LT1 261 MM3Z10VT1 256 MMBZ5221BLT1 266 MMBZ5267BLT1 266
BZX84C8V2LT1 261 MM3Z11VT1 256 MMBZ5222BLT1 266 MMBZ5268BLT1 266
BZX84C9V1LT1 261 MM3Z12VT1 256 MMBZ5223BLT1 266 MMBZ5269BLT1 266
BZX85C10RL 223 MM3Z13VT1 256 MMBZ5224BLT1 266 MMBZ5270BLT1 266
BZX85C12RL 223 MM3Z15VT1 256 MMBZ5225BLT1 266 MMBZ5V6ALT1 140
BZX85C13RL 223 MM3Z16VT1 256 MMBZ5226BLT1 266 MMBZ6V2ALT1 140
BZX85C15RL 223 MM3Z18VT1 256 MMBZ5227BLT1 266 MMBZ6V8ALT1 140
BZX85C16RL 223 MM3Z20VT1 256 MMBZ5228BLT1 266 MMBZ9V1ALT1 140
BZX85C18RL 223 MM3Z22VT1 256 MMBZ5229BLT1 266 MMQA12VT1 151
BZX85C22RL 223 MM3Z24VT1 256 MMBZ5230BLT1 266 MMQA13VT1 151
BZX85C24RL 223 MM3Z27VT1 256 MMBZ5231BLT1 266 MMQA15VT1 151
BZX85C27RL 223 MM3Z2V4T1 256 MMBZ5232BLT1 266 MMQA18VT1 151
BZX85C30RL 223 MM3Z2V7T1 256 MMBZ5233BLT1 266 MMQA20VT1 151
BZX85C33RL 223 MM3Z30VT1 256 MMBZ5234BLT1 266 MMQA21VT1 151
BZX85C36RL 223 MM3Z33VT1 256 MMBZ5235BLT1 266 MMQA22VT1 151
BZX85C3V3RL 223 MM3Z36VT1 256 MMBZ5236BLT1 266 MMQA24VT1 151
BZX85C3V6RL 223 MM3Z39VT1 256 MMBZ5237BLT1 266 MMQA27VT1 151
BZX85C3V9RL 223 MM3Z3V0T1 256 MMBZ5238BLT1 266 MMQA30VT1 151
BZX85C43RL 223 MM3Z3V3T1 256 MMBZ5239BLT1 266 MMQA33VT1 151
BZX85C47RL 223 MM3Z3V6T1 256 MMBZ5240BLT1 266 MMQA5V6T1 151
BZX85C4V3RL 223 MM3Z3V9T1 256 MMBZ5241BLT1 266 MMQA6V2T1 151
BZX85C4V7RL 223 MM3Z43VT1 256 MMBZ5242BLT1 266 MMQA6V8T1 151
BZX85C5V1RL 223 MM3Z47VT1 256 MMBZ5243BLT1 266 MMSZ10T1 280
BZX85C5V6RL 223 MM3Z4V3T1 256 MMBZ5244BLT1 266 MMSZ11T1 280
BZX85C62RL 223 MM3Z4V7T1 256 MMBZ5245BLT1 266 MMSZ12T1 280
BZX85C6V2RL 223 MM3Z51VT1 256 MMBZ5246BLT1 266 MMSZ13T1 280
BZX85C6V8RL 223 MM3Z56VT1 256 MMBZ5247BLT1 266 MMSZ15T1 280
BZX85C75RL 223 MM3Z5V1T1 256 MMBZ5248BLT1 266 MMSZ16T1 280
BZX85C7V5RL 223 MM3Z5V6T1 256 MMBZ5249BLT1 266 MMSZ18T1 280
BZX85C82RL 223 MM3Z62VT1 256 MMBZ5250BLT1 266 MMSZ20T1 280
BZX85C8V2RL 223 MM3Z68VT1 256 MMBZ5251BLT1 266 MMSZ22T1 280
BZX85C9V1RL 223 MM3Z6V2T1 256 MMBZ5252BLT1 266 MMSZ24T1 280
DF6A6.8FUT1 158 MM3Z6V8T1 256 MMBZ5253BLT1 266 MMSZ27T1 280
ICTE–10 84 MM3Z75VT1 256 MMBZ5254BLT1 266 MMSZ2V4T1 280
ICTE–10C 89 MM3Z7V5T1 256 MMBZ5255BLT1 266 MMSZ2V7T1 280

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DEVICE PAGE DEVICE PAGE DEVICE PAGE DEVICE PAGE
MMSZ30T1 280 MMSZ4715T1 276 MMSZ5261BT1 271 P6KE12A 47
MMSZ33T1 280 MMSZ4716T1 276 MMSZ5262BT1 271 P6KE12CA 53
MMSZ36T1 280 MMSZ4717T1 276 MMSZ5263BT1 271 P6KE130A 47
MMSZ39T1 280 MMSZ4V3T1 280 MMSZ5264BT1 271 P6KE130CA 53
MMSZ3V0T1 280 MMSZ4V7T1 280 MMSZ5265BT1 271 P6KE13A 47
MMSZ3V3T1 280 MMSZ51T1 280 MMSZ5266BT1 271 P6KE13CA 53
MMSZ3V6T1 280 MMSZ5221BT1 271 MMSZ5267BT1 271 P6KE150A 47
MMSZ3V9T1 280 MMSZ5222BT1 271 MMSZ5268BT1 271 P6KE150CA 53
MMSZ43T1 280 MMSZ5223BT1 271 MMSZ5269BT1 271 P6KE15A 47
MMSZ4678T1 276 MMSZ5224BT1 271 MMSZ5270BT1 271 P6KE15CA 53
MMSZ4679T1 276 MMSZ5225BT1 271 MMSZ5272BT1 271 P6KE160A 47
MMSZ4680T1 276 MMSZ5226BT1 271 MMSZ56T1 280 P6KE160CA 53
MMSZ4681T1 276 MMSZ5227BT1 271 MMSZ5V1T1 280 P6KE16A 47
MMSZ4682T1 276 MMSZ5228BT1 271 MMSZ5V6T1 280 P6KE16CA 53
MMSZ4683T1 276 MMSZ5229BT1 271 MMSZ6V2T1 280 P6KE170A 47
MMSZ4684T1 276 MMSZ5230BT1 271 MMSZ6V8T1 280 P6KE170CA 53
MMSZ4685T1 276 MMSZ5231BT1 271 MMSZ7V5T1 280 P6KE180A 47
MMSZ4686T1 276 MMSZ5232BT1 271 MMSZ8V2T1 280 P6KE180CA 53
MMSZ4687T1 276 MMSZ5233BT1 271 MMSZ9V1T1 280 P6KE18A 47
MMSZ4688T1 276 MMSZ5234BT1 271 MSQA6V1W5T2 155 P6KE18CA 53
MMSZ4689T1 276 MMSZ5235BT1 271 MZP4729A 242 P6KE200A 47
MMSZ4690T1 276 MMSZ5236BT1 271 MZP4734A 242 P6KE200CA 53
MMSZ4691T1 276 MMSZ5237BT1 271 MZP4735A 242 P6KE20A 47
MMSZ4692T1 276 MMSZ5238BT1 271 MZP4736A 242 P6KE20CA 53
MMSZ4693T1 276 MMSZ5239BT1 271 MZP4737A 242 P6KE22A 47
MMSZ4694T1 276 MMSZ5240BT1 271 MZP4738A 242 P6KE22CA 53
MMSZ4695T1 276 MMSZ5241BT1 271 MZP4740A 242 P6KE24A 47
MMSZ4696T1 276 MMSZ5242BT1 271 MZP4741A 242 P6KE24CA 53
MMSZ4697T1 276 MMSZ5243BT1 271 MZP4744A 242 P6KE27A 47
MMSZ4698T1 276 MMSZ5244BT1 271 MZP4745A 242 P6KE27CA 53
MMSZ4699T1 276 MMSZ5245BT1 271 MZP4746A 242 P6KE30A 47
MMSZ4700T1 276 MMSZ5246BT1 271 MZP4749A 242 P6KE30CA 53
MMSZ4701T1 276 MMSZ5247BT1 271 MZP4750A 242 P6KE33A 47
MMSZ4702T1 276 MMSZ5248BT1 271 MZP4751A 242 P6KE33CA 53
MMSZ4703T1 276 MMSZ5249BT1 271 MZP4752A 242 P6KE36A 47
MMSZ4704T1 276 MMSZ5250BT1 271 MZP4753A 242 P6KE36CA 53
MMSZ4705T1 276 MMSZ5251BT1 271 P6KE100A 47 P6KE39A 47
MMSZ4706T1 276 MMSZ5252BT1 271 P6KE100CA 53 P6KE39CA 53
MMSZ4707T1 276 MMSZ5253BT1 271 P6KE10A 47 P6KE43A 47
MMSZ4708T1 276 MMSZ5254BT1 271 P6KE10CA 53 P6KE43CA 53
MMSZ4709T1 276 MMSZ5255BT1 271 P6KE110A 47 P6KE47A 47
MMSZ4710T1 276 MMSZ5256BT1 271 P6KE110CA 53 P6KE47CA 53
MMSZ4711T1 276 MMSZ5257BT1 271 P6KE11A 47 P6KE51A 47
MMSZ4712T1 276 MMSZ5258BT1 271 P6KE11CA 53 P6KE51CA 53
MMSZ4713T1 276 MMSZ5259BT1 271 P6KE120A 47 P6KE56A 47
MMSZ4714T1 276 MMSZ5260BT1 271 P6KE120CA 53 P6KE56CA 53

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DEVICE PAGE DEVICE PAGE DEVICE PAGE DEVICE PAGE
P6KE6.8A 47 P6SMB22AT3 113 SA110CA 70 SA36A 65
P6KE6.8CA 53 P6SMB22CAT3 123 SA11A 65 SA36CA 69
P6KE62A 47 P6SMB24AT3 113 SA11CA 69 SA40A 65
P6KE62CA 53 P6SMB24CAT3 123 SA120A 65 SA40CA 69
P6KE68A 47 P6SMB27AT3 113 SA120CA 70 SA43A 65
P6KE68CA 53 P6SMB27CAT3 123 SA12A 65 SA43CA 69
P6KE7.5A 47 P6SMB30AT3 113 SA12CA 69 SA45A 65
P6KE7.5CA 53 P6SMB30CAT3 123 SA130A 65 SA45CA 69
P6KE75A 47 P6SMB33AT3 113 SA130CA 70 SA48A 65
P6KE75CA 53 P6SMB33CAT3 123 SA13A 65 SA48CA 69
P6KE8.2A 47 P6SMB36AT3 113 SA13CA 69 SA5.0A 65
P6KE8.2CA 53 P6SMB36CAT3 123 SA14A 65 SA5.0CA 69
P6KE82A 47 P6SMB39AT3 113 SA14CA 69 SA51A 65
P6KE82CA 53 P6SMB39CAT3 123 SA150A 65 SA51CA 69
P6KE9.1A 47 P6SMB43AT3 113 SA150CA 70 SA58A 65
P6KE9.1CA 53 P6SMB43CAT3 123 SA15A 65 SA58CA 69
P6KE91A 47 P6SMB47AT3 113 SA15CA 69 SA6.0A 65
P6KE91CA 53 P6SMB47CAT3 123 SA160A 65 SA6.0CA 69
P6SMB100AT3 113 P6SMB51AT3 113 SA160CA 70 SA60A 65
P6SMB10AT3 113 P6SMB51CAT3 123 SA16A 65 SA60CA 69
P6SMB110AT3 113 P6SMB56AT3 113 SA16CA 69 SA64A 65
P6SMB11AT3 113 P6SMB56CAT3 123 SA170A 65 SA64CA 70
P6SMB11CAT3 123 P6SMB6.8AT3 113 SA170CA 70 SA7.0A 65
P6SMB120AT3 113 P6SMB62AT3 113 SA17A 65 SA7.0CA 69
P6SMB12AT3 113 P6SMB62CAT3 123 SA17CA 69 SA7.5A 65
P6SMB12CAT3 123 P6SMB68AT3 113 SA18A 65 SA7.5CA 69
P6SMB130AT3 113 P6SMB68CAT3 123 SA18CA 69 SA70A 65
P6SMB13AT3 113 P6SMB7.5AT3 113 SA20A 65 SA70CA 70
P6SMB13CAT3 123 P6SMB75AT3 113 SA20CA 69 SA78A 65
P6SMB150AT3 113 P6SMB75CAT3 123 SA22A 65 SA78CA 70
P6SMB15AT3 113 P6SMB8.2AT3 113 SA22CA 69 SA8.0A 65
P6SMB15CAT3 123 P6SMB82AT3 113 SA24A 65 SA8.0CA 69
P6SMB160AT3 113 P6SMB82CAT3 123 SA24CA 69 SA8.5A 65
P6SMB16AT3 113 P6SMB9.1AT3 113 SA26A 65 SA8.5CA 69
P6SMB16CAT3 123 P6SMB91AT3 113 SA26CA 69 SA85CA 70
P6SMB170AT3 113 P6SMB91CAT3 123 SA28A 65 SA9.0A 65
P6SMB180AT3 113 SA100A 65 SA28CA 69 SA9.0CA 69
P6SMB18AT3 113 SA100CA 70 SA30A 65 SA90A 65
P6SMB18CAT3 123 SA10A 65 SA30CA 69 SA90CA 70
P6SMB200AT3 113 SA10CA 69 SA33A 65 SMS05T1 160
P6SMB20AT3 113 SA110A 65 SA33CA 69 SMS05T3 160
P6SMB20CAT3 123

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 CHAPTER 2
Selector Guide for Transient Voltage Suppressors
and Zener Diodes

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 ON Semiconductor’s standard TVS (Transient
Page
Voltage Suppressors) and Zener diodes comprise the Zener Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
largest inventoried line in the industry. Continuous Axial Leaded . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
development of improved manufacturing techniques Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
have resulted in computerized diffusion and test, as well TVS (Transient Voltage Suppressors) . . . . . . . . . . . 21
as critical process controls learned from Axial Leaded . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
surface–sensitive MOS fabrication. The resulting higher 500 Watt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
yields have lowered the factory costs. Check the 600 Watt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
1500 Watt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
following features for application to your specific
Surface Mount Packages . . . . . . . . . . . . . . . . . . . 28
requirements: 175 Watt (Powermite) . . . . . . . . . . . . . . . . . . . . 28
• Wide selection of package materials and styles: 400 Watt (SMA) . . . . . . . . . . . . . . . . . . . . . . . . . 29
– Plastic (Surmetic) for low cost, mechanical 600 Watt (SMB) . . . . . . . . . . . . . . . . . . . . . . . . . 31
ruggedness 1500 Watt (SMC) . . . . . . . . . . . . . . . . . . . . . . . 36
– Glass for high reliability, low cost Multiple Device Packages . . . . . . . . . . . . . . . . . . . 38
Duals (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . 38
– Surface Mount packages for state of the art
Quads (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . 40
designs
• Steady State Power Dissipation from 0.25 to
5.0 Watts
• Breakdown voltages from 1.8 to 400 Volts in
approximately 10% steps
• Transient Voltage Suppression Protection from 24 to
1500 Watts with Working Peak Reverse Voltage
from 5.0 to 214 Volts
• ESD protection devices
• Special selection of electrical characteristics
available at low cost due to high–volume lines
(check your ON Semiconductor sales representative
for special quotations)
• UL Recognition on many TVS device types
• Tape and Reel options available on all axial leaded
and surface mount types
• Many TVS are offered as bidirectional
(clipper devices)
• Standard Zener tolerance is  5.0%

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Zener Diodes — Regulation in Axial Leads

Table 1. Axial Leaded — 3, 5 Watt

Nominal
o a 3 Watt
a 5 Watt
a
Zener
Breakdown
Voltage Cathode = Polarity Band Cathode =Polarity Band

Volts
Plastic
Surmetic 30 Plastic
Case 59-03 Surmetic 40
(DO-41) Case 17

1.8
2.0
2.2
2.4
2.5
2.7
2.8
3.0
3.3 1N5913B 1N5333B
3.6 MZP4729A 1N5914B 1N5334B
3.9 MZP4730A 1N5915B 1N5335B
4.3 MZP4731A 1N5916B 1N5336B
4.7 MZP4732A 1N5917B 1N5337B
5.1 MZP4733A 1N5918B 1N5338B
5.6 MZP4734A 1N5919B 1N5339B
6.0 1N5340B
6.2 MZP4735A 1N5920B 1N5341B
6.8 MZP4736A 1N5921B 1N5342B
7.5 MZP4737A 1N5922B 1N5343B
8.2 MZP4738A 1N5923B 1N5344B
8.7 1N5345B
9.1 MZP4739A 1N5924B 1N5346B
10 MZP4740A 1N5925B 1N5347B
11 MZP4741A 1N5926B 1N5348B
12 1N5927B 1N5349B
13 MZP4743A 1N5928B 1N5350B
14 1N5351B
15 MZP4744A 1N5929B 1N5352B
16 MZP4745A 1N5930B 1N5353B
17 1N5354B
18 MZP4746A 1N5931B 1N5355B
19 1N5356B
20 MZP4747A 1N5932B 1N5357B
22 MZP4748A 1N5933B 1N5358B
24 MZP4749A 1N5934B 1N5359B

Devices listed in bold, italic are ON Semiconductor preferred devices.

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15
Zener Diodes — Regulation in Axial Leads (continued)

Table 1. Axial Leaded — 3, 5 Watt (continued)

Nominal
o a 3 Watt
a 5 Watt
a
Zener
Breakdown
Voltage Cathode = Polarity Band Cathode = Polarity Band

Volts
Plastic
Surmetic 30 Plastic
Case 59-03 Surmetic 40
(DO-41) Case 17

25 1N5360B
27 MZP4750A 1N5935B 1N5361B
28 1N5362B
30 MZP4751A 1N5936B 1N5363B
33 1N5937B 1N5364B
36 1N5938B 1N5365B
39 1N5939B 1N5366B
43 1N5940B 1N5367B
47 1N5941B 1N5368B
51 1N5942B 1N5369B
56 1N5943B 1N5370B
60 1N5371B
62 1N5944B 1N5372B
68 1N5945B 1N5373B
75 1N5946B 1N5374B
82 1N5947B 1N5375B
87 1N5376B
91 1N5948B 1N5377B
100 1N5949B 1N5378B
110 1N5950B 1N5379B
120 1N5951B 1N5380B
130 1N5952B 1N5381B
140 1N5382B
150 1N5953B 1N5383B
160 1N5954B 1N5384B
170 1N5385B
180 1M180ZS5 1N5955B 1N5386B
190 1N5387B
200 1M200ZS5 1N5956B 1N5388B
220
240
270
300
330
360
400

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16
 Zener Diodes — Regulation in Surface Mount

Table 2. Surface Mount Packages — .2, .225, .5 Watt

Nominal 200 mW 225 mW 500 mW
Zener
Break–down
Voltage
SOD–323 SOT-23 SOD-123

Cathode
Anode
Volts No Connection
Plastic Plastic
Case 477

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Case 318 Case 425, Style 1
Style 1
TO-236AB

ÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁ
ÁÁÁÁ
Á
ÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁ
1.8 MMSZ4678T1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
2.0 MMSZ4679T1
2.2 MMSZ4680T1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
2.4
ÁÁÁÁÁÁ
ÁÁÁÁÁ
2.5

ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
MM3Z2V4T1

ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
BZX84C2V4LT1

ÁÁÁÁÁÁ
MMBZ5221BLT1
MMBZ5222BLT1
MMSZ2V4T1 MMSZ4681T1 MMSZ5221BT1
MMSZ5222BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
2.7 MM3Z2V7T1 BZX84C2V7LT1 MMBZ5223BLT1 MMSZ2V7T1 MMSZ4682T1 MMSZ5223BT1
2.8 MMBZ5224BLT1 MMSZ5224BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
3.0
3.3
3.6
ÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
MM3Z3V0T1

ÁÁÁÁÁ
MM3Z3V3T1
MM3Z3V6T1
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
BZX84C3V0LT1

ÁÁÁÁÁÁ
BZX84C3V3LT1
BZX84C3V6LT1
MMBZ5225BLT1
MMBZ5226BLT1
MMBZ5227BLT1
MMSZ3V0T1
MMSZ3V3T1
MMSZ3V6T1
MMSZ4683T1
MMSZ4684T1
MMSZ4685T1
MMSZ5225BT1
MMSZ5226BT1
MMSZ5227BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
3.9
ÁÁÁÁÁÁ
ÁÁÁÁÁ
4.3
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
MM3Z3V9T1

ÁÁÁÁÁ
MM3Z4V3T1 ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
BZX84C3V9LT1

ÁÁÁÁÁÁ
BZX84C4V3LT1
MMBZ5228BLT1
MMBZ5229BLT1
MMSZ3V9T1
MMSZ4V3T1
MMSZ4686T1
MMSZ4687T1
MMSZ5228BT1
MMSZ5229BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
4.7 MM3Z4V7T1 BZX84C4V7LT1 MMBZ5230BLT1 MMSZ4V7T1 MMSZ4688T1 MMSZ5230BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
5.1 MM3Z5V1T1 BZX84C5V1LT1 MMBZ5231BLT1 MMSZ5V1T1 MMSZ4689T1 MMSZ5231BT1
5.6 MM3Z5V6T1 BZX84C5V6LT1 MMBZ5232BLT1 MMSZ5V6T1 MMSZ4690T1 MMSZ5232BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
6.0
6.2ÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
MM3Z6V2T1 ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
BZX84C6V2LT1
MMBZ5233BLT1
MMBZ5234BLT1 MMSZ6V2T1 MMSZ4691T1
MMSZ5233BT1
MMSZ5234BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
6.8 MM3Z6V8T1 BZX84C6V8LT1 MMBZ5235BLT1 MMSZ6V8T1 MMSZ4692T1 MMSZ5235BT1
7.5 MM3Z7V5T1 BZX84C7V5LT1 MMBZ5236BLT1 MMSZ7V5T1 MMSZ4693T1 MMSZ5236BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
8.2 MM3Z8V2T1 BZX84C8V2LT1 MMBZ5237BLT1 MMSZ8V2T1 MMSZ4694T1 MMSZ5237BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
8.7 MMBZ5238BLT1 MMSZ4695T1 MMSZ5238BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
9.1 MM3Z9V1T1 BZX84C9V1LT1 MMBZ5239BLT1 MMSZ9V1T1 MMSZ4696T1 MMSZ5239BT1
10 MM3Z10VT1 BZX84C10LT1 MMBZ5240BLT1 MMSZ10T1 MMSZ4697T1 MMSZ5240BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
11 MM3Z11VT1 BZX84C11LT1 MMBZ5241BLT1 MMSZ11T1 MMSZ4698T1 MMSZ5241BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
12 MM3Z12VT1 BZX84C12LT1 MMBZ5242BLT1 MMSZ12T1 MMSZ4699T1 MMSZ5242BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
13 MM3Z13VT1 BZX84C13LT1 MMBZ5243BLT1 MMSZ13T1 MMSZ4700T1 MMSZ5243BT1
14 MMBZ5244BLT1 MMSZ4701T1 MMSZ5244BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
15
16
17
ÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
MM3Z15VT1

ÁÁÁÁÁ
MM3Z16VT1
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
BZX84C15LT1

ÁÁÁÁÁÁ
BZX84C16LT1
MMBZ5245BLT1
MMBZ5246BLT1
MMBZ5247BLT1
MMSZ15T1
MMSZ16T1
MMSZ4702T1
MMSZ4703T1
MMSZ4704T1
MMSZ5245BT1
MMSZ5246BT1
MMSZ5247BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
18
ÁÁÁÁÁÁ
ÁÁÁÁÁ
19
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
MM3Z18VT1

ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
BZX84C18LT1

ÁÁÁÁÁÁ
MMBZ5248BLT1
MMBZ5249BLT1
MMSZ18T1 MMSZ4705T1
MMSZ4706T1
MMSZ5248BT1
MMSZ5249BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
20 MM3Z20VT1 BZX84C20LT1 MMBZ5250BLT1 MMSZ20T1 MMSZ4707T1 MMSZ5250BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
22 MM3Z22VT1 BZX84C22LT1 MMBZ5251BLT1 MMSZ22T1 MMSZ4708T1 MMSZ5251BT1
24 MM3Z24VT1 BZX84C24LT1 MMBZ5252BLT1 MMSZ24T1 MMSZ4709T1 MMSZ5252BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
25
27ÁÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
MM3Z27VT1 ÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁ
BZX84C27LT1
MMBZ5253BLT1
MMBZ5254BLT1 MMSZ27T1
MMSZ4710T1
MMSZ4711T1
MMSZ5253BT1
MMSZ5254BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
28 MMBZ5255BLT1 MMSZ4712T1 MMSZ5255BT1
30 MM3Z30VT1 BZX84C30LT1 MMBZ5256BLT1 MMSZ30T1 MMSZ4713T1 MMSZ5256BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
33 MM3Z33VT1 BZX84C33LT1 MMBZ5257BLT1 MMSZ33T1 MMSZ4714T1 MMSZ5257BT1

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17
 Zener Diodes — Regulation in Surface Mount (continued)

Table 2. Surface Mount Packages — .2, .225, .5 Watt (continued)

Nominal 200 mW 225 mW 500 mW
Zener
Break–down
Voltage
SOD–323 SOT-23 SOD-123

Cathode
Anode
Volts No Connection
Plastic Plastic
Case 477

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Case 318 Case 425, Style 1
Style 1
TO-236AB

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
36 MM3Z36VT1 BZX84C36LT1 MMBZ5258BLT1 MMSZ36T1 MMSZ4715T1 MMSZ5258BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
39 MM3Z39VT1 BZX84C39LT1 MMBZ5259BLT1 MMSZ39T1 MMSZ4716T1 MMSZ5259BT1
43 MM3Z43VT1 BZX84C43LT1 MMBZ5260BLT1 MMSZ43T1 MMSZ4717T1 MMSZ5260BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
47
ÁÁÁÁÁÁ
ÁÁÁÁÁ
51

ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
MM3Z47VT1

ÁÁÁÁÁ
MM3Z51VT1
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
BZX84C47LT1

Á
ÁÁÁÁÁÁ
ÁÁÁÁÁ
BZX84C51LT1
MMBZ5261BLT1
MMBZ5262BLT1
MMSZ47T1
MMSZ51T1
MMSZ5261BT1
MMSZ5262BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
56 MM3Z56VT1 BZX84C56LT1 MMBZ5263BLT1 MMSZ56T1 MMSZ5263BT1
60 MMBZ5264BLT1 MMSZ5264BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
62
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
MM3Z62VT1
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
BZX84C62LT1 MMBZ5265BLT1 MMSZ62T1 MMSZ5265BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
68 MM3Z68VT1 BZX84C68LT1 MMBZ5266BLT1 MMSZ68T1 MMSZ5266BT1
75 MM3Z75VT1 BZX84C75LT1 MMBZ5267BLT1 MMSZ75T1 MMSZ5267BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
82
ÁÁÁÁÁÁ
ÁÁÁÁÁ
87
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
MMBZ5268BLT1
MMBZ5269BLT1
MMSZ5268BT1
MMSZ5269BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁ
ÁÁÁÁ
Á
ÁÁÁÁÁ
ÁÁÁÁ
Á
ÁÁÁÁÁÁ
ÁÁÁÁÁ
91 MMBZ5270BLT1 MMSZ5270BT1

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
100
110

ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
120
130ÁÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁ
Á
ÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
150
160

ÁÁÁÁÁ
ÁÁÁÁÁ
Á ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
Á ÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁ
ÁÁÁÁÁÁ ÁÁÁÁÁ
ÁÁÁÁÁÁ
180
200

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18
Zener Diodes — Regulation in Surface Mount (continued)

Table 3. Surface Mount Packages — 1.5, 3 Watt

Nominal 1.5 Watt 3 Watt 3 Watt
Zener
Break–down
Voltage
SMA Powermite SMB

Cathode

Volts
Plastic Anode
Plastic

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Plastic
Case 403B
Case 457 Case 403A
Cathode = Notch

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
1.8
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
2.0
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
2.2

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
2.4
2.5

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
2.7
2.8 ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
3.0
3.3 1SMA5913BT3 1SMB5913BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
3.6 1SMA5914BT3 1SMB5914BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
3.9 1SMA5915BT3 1SMB5915BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
4.3 1SMA5916BT3 1SMB5916BT3
4.7 1SMA5917BT3 1SMB5917BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
5.1 1SMA5918BT3 1SMB5918BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
5.6 1SMA5919BT3 1SMB5919BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
6.0
6.2 1SMA5920BT3 1PMT5920BT3 1SMB5920BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
6.8
7.5
8.2
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
1SMA5921BT3

ÁÁÁÁÁÁÁÁÁÁ
1SMA5922BT3
1SMA5923BT3
1PMT5921BT3
1PMT5922BT3
1PMT5923BT3
1SMB5921BT3
1SMB5922BT3
1SMB5923BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
8.7
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
9.1
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
1SMA5924BT3 1PMT5924BT3 1SMB5924BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
10 1SMA5925BT3 1PMT5925BT3 1SMB5925BT3
11 1SMA5926BT3 1SMB5926BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
12
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
13
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
1SMA5927BT3

ÁÁÁÁÁÁÁÁÁÁ
1SMA5928BT3
1PMT5927BT3 1SMB5927BT3
1SMB5928BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
14 1PMT5929BT3 1SMB5929BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
15 1SMA5929BT3
16 1SMA5930BT3 1PMT5930BT3 1SMB5930BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
17

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
18 1SMA5931BT3 1PMT5931BT3 1SMB5931BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
19
20 1SMA5932BT3 1SMB5932BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
22 1SMA5933BT3 1PMT5933BT3 1SMB5933BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
24 1SMA5934BT3 1PMT5934BT3 1SMB5934BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
25
27 1SMA5935BT3 1PMT5935BT3 1SMB5935BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
28

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
30 1SMA5936BT3 1PMT5936BT3 1SMB5936BT3
33 1SMA5937BT3 1SMB5937BT3

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19
Zener Diodes — Regulation in Surface Mount (continued)

Table 3. Surface Mount Packages — 1.5, 3 Watt (continued)

Nominal 1.5 Watt 3 Watt 3 Watt
Zener
Break–down
Voltage
SMA Powermite SMB

Cathode

Volts
Plastic Anode
Plastic

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Plastic
Case 403B Case 403A
Case 457
Cathode = Notch

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
36
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
39
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
1SMA5938BT3

ÁÁÁÁÁÁÁÁÁÁ
1SMA5939BT3 1PMT5939BT3
1SMB5938BT3
1SMB5939BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
43 1SMA5940BT3 1SMB5940BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
47 1SMA5941BT3 1PMT5941BT3 1SMB5941BT3
51 1SMA5942BT3 1SMB5942BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
56
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
60

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
1SMA5943BT3

ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
1SMB5943BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
62 1SMA5944BT3 1SMB5944BT3
68 1SMA5945BT3 1SMB5945BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
75 1SMB5946BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
82 1SMB5947BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
87
91 1SMB5948BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
100 1SMB5949BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
110 1SMB5950BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
120 1SMB5951BT3
130 1SMB5952BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
150
Á
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
160
180
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
1SMB5953BT3
1SMB5954BT3
1SMB5955BT3

ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
200
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 1SMB5956BT3

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20
TVS — in Axial Leads

Table 4. Peak Power Dissipation, 500 Watts @ 1 ms Surge

Case 59-04 — Mini Mosorb

IRSM
IRSM
2

CASE 59-04 (Mini Mosorb) 0 1 2 3 4 5 6

PLASTIC Time (ms)
Cathode = Polarity Band Surge Current Characterisitcs

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 35 A Pulse
(except bidirectional devices).
Breakdown Voltage
Working Peak Maximum
Maxim m Maxim m
Maximum
Reverse Reverse Maxim m
Maximum Reverse Voltage
VBR
Voltage @ IT Leakage Reverse Surge
S rge @ IRSM
(Volts)
VRWM Pulse
P lse @ VRWM C rrent IRSM
Current (Clamping Voltage)
(Volts) Device Min Max (mA) IR (µA) (Amps) VRSM (Volts)
5 SA5.0A 6.4 7 10 600 54.3 9.2
6 SA6.0A 6.67 7.37 10 600 48.5 10.3
6.5 SA6.5A 7.22 7.98 10 400 44.7 11.2
7 SA7.0A 7.78 8.6 10 150 41.7 12
7.5 SA7.5A 8.33 9.21 1 50 38.8 12.9
8 SA8.0A 8.89 9.83 1 25 36.7 13.6
8.5 SA8.5A 9.44 10.4 1 5 34.7 14.4
9 SA9.0A 10 11.1 1 1 32.5 15.4
10 SA10A 11.1 12.3 1 1 29.4 17
11 SA11A 12.2 13.5 1 1 27.4 18.2
12 SA12A 13.3 14.7 1 1 25.1 19.9
13 SA13A 14.4 15.9 1 1 23.2 21.5
14 SA14A 15.6 17.2 1 1 21.5 23.2
15 SA15A 16.7 18.5 1 1 20.6 24.4
16 SA16A 17.8 19.7 1 1 19.2 26
17 SA17A 18.9 20.9 1 1 18.1 27.6
18 SA18A 20 22.1 1 1 17.2 29.2
20 SA20A 22.2 24.5 1 1 15.4 32.4
22 SA22A 24.4 26.9 1 1 14.1 35.5
24 SA24A 26.7 29.5 1 1 12.8 38.9
26 SA26A 28.9 31.9 1 1 11.9 42.1
28 SA28A 31.1 34.4 1 1 11 45.4
30 SA30A 33.3 36.8 1 1 10.3 48.4
33 SA33A 36.7 40.6 1 1 9.4 53.3
For bidirectional types use CA suffix, SA6.5CA, SA12CA, SA13CA and SA15CA are ON Semiconductor preferred devices.
Bi–directional devices have cathode polarity band on each end. (Consult factory for availability).

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21
TVS — in Axial Leads (continued)

Table 4. Peak Power Dissipation, 500 Watts @ 1 ms Surge

Case 59-04 — Mini Mosorb (continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 35 A Pulse
(except bidirectional devices).
Breakdown Voltage
Working Peak Maximum
Maxim m Maxim m
Maximum
Reverse Reverse Maximum
Maxim m Reverse Voltage
VBR
Voltage @ IT Leakage Reverse Surge
S rge @ IRSM
(Volts)
VRWM Pulse
P lse @ VRWM C rrent IRSM
Current (Clamping Voltage)
(Volts) Device Min Max (mA) IR (µA) (Amps) VRSM (Volts)
36 SA36A 40 44.2 1 1 8.6 58.1
40 SA40A 44.4 49.1 1 1 7.8 64.5
43 SA43A 47.8 52.8 1 1 7.2 69.4
45 SA45A 50 55.3 1 1 6.9 72.7
48 SA48A 53.3 58.9 1 1 6.5 77.4
51 SA51A 56.7 62.7 1 1 6.1 82.4
54 SA54A 60 66.3 1 1 5.7 87.1
58 SA58A 64.4 71.2 1 1 5.3 93.6
60 SA60A 66.7 73.7 1 1 5.2 96.8
64 SA64A 71.1 78.6 1 1 4.9 103
70 SA70A 77.8 86 1 1 4.4 113
75 SA75A 83.3 92.1 1 1 4.1 121
78 SA78A 86.7 95.8 1 1 4 126
85 SA85A 94.4 104 1 1 3.6 137
90 SA90A 100 111 1 1 3.4 146
100 SA100A 111 123 1 1 3.1 162
110 SA110A 122 135 1 1 2.8 177
120 SA120A 133 147 1 1 2.5 193
130 SA130A 144 159 1 1 2.4 209
150 SA150A 167 185 1 1 2.1 243
160 SA160A 178 197 1 1 1.9 259
170 SA170A 189 209 1 1 1.8 275

For bidirectional types use CA suffix, SA18CA and SA24CA are ON Semiconductor preferred devices.
Bi–directional devices have cathode polarity band on each end. (Consult factory for availability).

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TVS — in Axial Leads (continued)

Table 5. Peak Power Dissipation, 600 Watts @ 1 ms Surge

Case 17 — Surmetic 40
IRSM
IRSM
2

CASE 17 0 1 2 3 4 5 6
PLASTIC Time (ms)
Cathode = Polarity Band Surge Current Characterisitcs

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 50 A Pulse
(except bidirectional devices).

Breakdown
ea do
Voltage Working
g Peak Maximum Maximum
R
Reverse R
Reverse Maximum Reverse V
R Voltage
lt
VBR
@ IT Voltage Leakage Reverse Surge
S rge @ IRSM
(Volts)
Pulse VRWM @ VRWM Current IRSM (Clamping Voltage)
Nom (mA) Device (Volts) IR (µA) (Amps) VRSM (Volts)
6.8 10 P6KE6.8A 5.8 1000 57 10.5
7.5 10 P6KE7.5A 6.4 500 53 11.3
8.2 10 P6KE8.2A 7.02 200 50 12.1
9.1 1 P6KE9.1A 7.78 50 45 13.4
10 1 P6KE10A 8.55 10 41 14.5
11 1 P6KE11A 9.4 5 38 15.6
12 1 P6KE12A 10.2 5 36 16.7
13 1 P6KE13A 11.1 5 33 18.2
15 1 P6KE15A 12.8 5 28 21.2
16 1 P6KE16A 13.6 5 27 22.5
18 1 P6KE18A 15.3 5 24 25.2
20 1 P6KE20A 17.1 5 22 27.7
22 1 P6KE22A 18.8 5 20 30.6
24 1 P6KE24A 20.5 5 18 33.2
27 1 P6KE27A 23.1 5 16 37.5
30 1 P6KE30A 25.6 5 14.4 41.4

33 1 P6KE33A 28.2 5 13.2 45.7

36 1 P6KE36A 30.8 5 12 49.9
39 1 P6KE39A 33.3 5 11.2 53.9
43 1 P6KE43A 36.8 5 10.1 59.3
47 1 P6KE47A 40.2 5 9.3 64.8
51 1 P6KE51A 43.6 5 8.6 70.1
56 1 P6KE56A 47.8 5 7.8 77
62 1 P6KE62A 53 5 7.1 85
68 1 P6KE68A 58.1 5 6.5 92
75 1 P6KE75A 64.1 5 5.8 103
82 1 P6KE82A 70.1 5 5.3 113
91 1 P6KE91A 77.8 5 4.8 125
100 1 P6KE100A 85.5 5 4.4 137
110 1 P6KE110A 94 5 4 152
120 1 P6KE120A 102 5 3.6 165
130 1 P6KE130A 111 5 3.3 179
For bidirectional types use CA suffix, P6KE7.5CA and P6KE11CA are ON Semiconductor preferred devices.

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23
TVS — in Axial Leads (continued)

Table 5. Peak Power Dissipation, 600 Watts @ 1 ms Surge

Case 17 — Surmetic 40 (continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 50 A Pulse
(except bidirectional devices).

Breakdown
ea do
Voltage Working
g Peak Maximum Maximum
R
Reverse R
Reverse Maximum Reverse V
R Voltage
l
VBR
@ IT Voltage Leakage Reverse Surge
S rge @ IRSM
(Volts)
Pulse VRWM @ VRWM Current IRSM (Clamping Voltage)
Nom (mA) Device (Volts) IR (µA) (Amps) VRSM (Volts)
150 1 P6KE150A 128 5 2.9 207
160 1 P6KE160A 136 5 2.7 219
170 1 P6KE170A 145 5 2.6 234
180 1 P6KE180A 154 5 2.4 246
200 1 P6KE200A 171 5 2.2 274
For bidirectional types use CA suffix. Bi–directional devices have cathode polarity band on each end. (Consult factory for
availability).

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TVS — in Axial Leads (continued)

Table 6. Peak Power Dissipation, 1500 Watts @ 1 ms Surge

Case 41A — Mosorb
IRSM
IRSM
2

0 1 2 3 4 5 6
CASE 41A
PLASTIC Time (ms)
Cathode = Polarity Band Surge Current Characterisitcs

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 100 A Pulse)
ELECTRICAL CHARACTERISTICS (C suffix denotes standard back to back bidirectional versions. Test both polarities)
Clamping Voltage(9)

Maximum Peak
Max Breakdown Peak
Reverse Pulse
Reverse Voltage Maximum Pulse
Voltage @ Current @
Stand- Maximum Reverse IRSM Current @ Ipp2 =
Off Reverse Surge (Clamping Ipp1 = 1 A 10 A
Voltage VBR @ IT Leakage Current Voltage) VC1 VC2
VRWM JEDEC Volts Pulse @ VRWM IRSM VRSM (Volts (Volts
(Volts) Device Device Min (mA) IR (µA) (Volts) (Volts) max) max)
5 1N5908 6 1 300 120 8.5 7.6 @ 8@
30 A 60 A
5 1N6373 ICTE-5/MPTE-5 6 1 300 160 9.4 7.1 7.5
8 1N6374 ICTE-8/MPTE-8 9.4 1 25 100 15 11.3 11.5
8 1N6382 ICTE-8C/MPTE-8C 9.4 1 25 100 15 11.4 11.6
10 1N6375 ICTE-10/MPTE-10 11.7 1 2 90 16.7 13.7 14.1
10 1N6383 ICTE-10C/MPTE-10C 11.7 1 2 90 16.7 14.1 14.5
12 1N6376 ICTE-12/MPTE-12 14.1 1 2 70 21.2 16.1 16.5
12 1N6384 ICTE-12C/MPTE-12C 14.1 1 2 70 21.2 16.7 17.1
15 1N6377 ICTE-15/MPTE-15 17.6 1 2 60 25 20.1 20.6
15 1N6385 ICTE-15C/MPTE-15C 17.6 1 2 60 25 20.8 21.4
18 1N6378 ICTE-18/MPTE-18 21.2 1 2 50 30 24.2 25.2
18 1N6386 ICTE-18C/MPTE-18C 21.2 1 2 50 30 24.8 25.5
22 1N6379 ICTE-22/MPTE-22 25.9 1 2 40 37.5 29.8 32
22 1N6387 ICTE-22C/MPTE-22C 25.9 1 2 40 37.5 30.8 32
36 1N6380 ICTE-36/MPTE-36 42.4 1 2 23 65.2 50.6 54.3
36 1N6388 ICTE-36C/MPTE-36C 42.4 1 2 23 65.2 50.6 54.3
45 1N6381 ICTE-45/MPTE-45 52.9 1 2 19 78.9 63.3 70
45 1N6389 ICTE-45C/MPTE-45C 52.9 1 2 19 78.9 63.3 70
1N6382 thru 1N6389 and C suffix ICTE/MPTE device types are bidirectional. Bi–directional devices have cathode polarity band on each
end. All other device types are unidirectional only. (Consult factory for availability)

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TVS — in Axial Leads (continued)

Table 7. Peak Power Dissipation, 1500 Watts @ 1 ms Surge

Case 41A – Mosorb

IRSM
IRSM
2

0 1 2 3 4 5 6
CASE 41A
PLASTIC Time (ms)
Cathode = Polarity Band Surge Current Characterisitcs

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 100 A Pulse
Maximum
Breakdown Voltage Reverse
Working Maxim m
Maximum V lt
Voltage
Peak Maximum Reverse @ IRSM
VBR
Reverse Reverse Surge (Clamping
Volts
@ IT Voltage Leakage Current Voltage)
Pulse JEDEC VRWM @ VRWM IRSM VRSM
Nom (mA) Device Device (Volts) IR (µA) (Amps) (Volts)
6.8 10 1N6267A 1.5KE6.8A 5.8 1000 143 10.5
7.5 10 1N6268A 1.5KE7.5A 6.4 500 132 11.3
8.2 10 1N6269A 1.5KE8.2A 7.02 200 124 12.1
9.1 1 1N6270A 1.5KE9.1A 7.78 50 112 13.4
10 1 1N6271A 1.5KE10A 8.55 10 103 14.5
11 1 1N6272A 1.5KE11A 9.4 5 96 15.6
12 1 1N6273A 1.5KE12A 10.2 5 90 16.7
13 1 1N6274A 1.5KE13A 11.1 5 82 18.2
15 1 1N6275A 1.5KE15A 12.8 5 71 21.2
16 1 1N6276A 1.5KE16A 13.6 5 67 22.5
18 1 1N6277A 1.5KE18A 15.3 5 59.5 25.2
20 1 1N6278A 1.5KE20A 17.1 5 54 27.7
22 1 1N6279A 1.5KE22A 18.8 5 49 30.6
24 1 1N6280A 1.5KE24A 20.5 5 45 33.2
27 1 1N6281A 1.5KE27A 23.1 5 40 37.5
30 1 1N6282A 1.5KE30A 25.6 5 36 41.4
33 1 1N6283A 1.5KE33A 28.2 5 33 45.7
36 1 1N6284A 1.5KE36A 30.8 5 30 49.9
39 1 1N6285A 1.5KE39A 33.3 5 28 53.9
43 1 1N6286A 1.5KE43A 36.8 5 25.3 59.3
47 1 1N6287A 1.5KE47A 40.2 5 23.2 64.8
51 1 1N6288A 1.5KE51A 43.6 5 21.4 70.1
56 1 1N6289A 1.5KE56A 47.8 5 19.5 77
62 1 1N6290A 1.5KE62A 53 5 17.7 85
68 1 1N6291A 1.5KE68A 58.1 5 16.3 92
75 1 1N6292A 1.5KE75A 64.1 5 14.6 103
82 1 1N6293A 1.5KE82A 70.1 5 13.3 113
91 1 1N6294A 1.5KE91A 77.8 5 12 125
100 1 1N6295A 1.5KE100A 85.5 5 11 137
110 1 1N6296A 1.5KE110A 94 5 9.9 152
120 1 1N6297A 1.5KE120A 102 5 9.1 165
130 1 1N6298A 1.5KE130A 111 5 8.4 179
For bidirectional types use CA suffix on 1.5KE series only. Bi–directional devices have cathode polarity band on each end.
(Consult factory for availability) 1N6267-6303A series do not have CA option since the CA is not included in EIA Registration.

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TVS — in Axial Leads (continued)

Table 7. Peak Power Dissipation, 1500 Watts @ 1 ms Surge

Case 41A – Mosorb (continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 100 A Pulse
Maximum
Breakdown Voltage Reverse
Working Maxim m
Maximum V lt
Voltage
Peak Maximum Reverse @ IRSM
VBR
Reverse Reverse Surge (Clamping
Volts
@ IT Voltage Leakage Current Voltage)
Pulse JEDEC VRWM @ VRWM IRSM VRSM
Nom (mA) Device Device (Volts) IR (µA) (Amps) (Volts)
150 1 1N6299A 1.5KE150A 128 5 7.2 207
160 1 1N6300A 1.5KE160A 136 5 6.8 219
170 1 1N6301A 1.5KE170A 145 5 6.4 234
180 1 1N6302A 1.5KE180A 154 5 6.1 246
200 1 1N6303A 1.5KE200A 171 5 5.5 274
220 1 1.5KE220A 185 5 4.6 328
250 1 1.5KE250A 214 5 5 344
For bidirectional types use CA suffix. Bi–directional devices have cathode polarity band on each end. (Consult factory for
availability). 1N6267-6303A series do not have CA option since the CA is not included in EIA Registration.

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TVS — in Surface Mount

Table 8. 1PMT Series Unidirectional Overvoltage Transient Suppressors, 175 Watts Peak Power
@ 1 ms Surge

ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted) (VF = 1.25 Volts @ 200 mA)
VRWM (V) VBR @ IT (V) (Note 2.) IT IR @ VRWM VC @ IPP IPP (A)
Device Marking
(Note 1.) Min Nom Max (mA) (µA) (V) (Note 3.)

IRSM
IRSM
POWERMITE 2
CASE 457–04
PLASTIC 0 1 2 3 4 5 6
Time (ms)
Surge Current Characterisitcs
1PMT5.0AT3 MKE 5.0 6.4 6.7 7.0 10 800 9.2 19
1PMT7.0AT3 MKM 7.0 7.78 8.2 8.6 10 500 12 14.6
1PMT12AT3 MLE 12 13.3 14 14.7 1.0 5.0 19.9 8.8
1PMT16AT3 MLP 16 17.8 18.75 19.7 1.0 5.0 26 7.0
1PMT18AT3 MLT 18 20 21 22.1 1.0 5.0 29.2 6.0
1PMT22AT3 MLX 22 24.4 25.6 26.9 1.0 5.0 35.5 4.9
1PMT24AT3 MLZ 24 26.7 28.1 29.5 1.0 5.0 38.9 4.5
1PMT26AT3 MME 26 28.9 30.4 31.9 1.0 5.0 42.1 4.2
1PMT28AT3 MMG 28 31.1 32.8 34.4 1.0 5.0 45.4 3.9
1PMT30AT3 MMK 30 33.3 35.1 36.8 1.0 5.0 48.4 3.6
1PMT33AT3 MMM 33 36.7 38.7 40.6 1.0 5.0 53.3 3.3
1PMT36AT3 MMP 36 40 42.1 44.2 1.0 5.0 58.1 3.0
1PMT40AT3 MMR 40 44.4 46.8 49.1 1.0 5.0 64.5 2.7
1PMT48AT3 MMX 48 53.3 56.1 58.9 1.0 5.0 77.4 2.3
1PMT51AT3 MMZ 51 56.7 59.7 62.7 1.0 5.0 82.4 2.1
1PMT58AT3 MNG 58 64.4 67.8 71.2 1.0 5.0 93.6 1.9
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.
2. VBR measured at pulse test current IT at ambient temperature of 25C.
3. 10 x 1000 µs exponential decay surge waveform.

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TVS — in Surface Mount (continued)

Table 9. 1SMA Series Unidirectional Overvoltage Transient Suppressors; 400 Watts Peak Power
@ 1 ms Surge

ELECTRICAL CHARACTERISTICS (VF = 3.5 Volts @ IF = 40 A for all types)

Working Breakdown Voltage Maximum Maximum
Maximum
Peak Reverse Voltage Reverse
VBR Reverse Leakage Device
Device Reverse IT @ IRSM Surge Current
Volts @ VRWM Marking
Voltage VRWM mA (Clamping Volt- IPP
(Min) IR (µA)
(Volts) age) VC (Volts) (Amps)

IRSM
IRSM
SMA 2
CASE 403B–01
PLASTIC 0 1 2 3 4 5 6
Time (ms)
Surge Current Characterisitcs
1SMA5.0AT3 5.0 6.4 10 9.2 43.5 400 QE
1SMA6.0AT3 6.0 6.67 10 10.3 38.8 400 QG
1SMA6.5AT3 6.5 7.22 10 11.2 35.7 250 QK
1SMA7.0AT3 7.0 7.78 10 12.0 33.3 250 QM
1SMA7.5AT3 7.5 8.33 1 12.9 31.0 50 QP
1SMA8.0AT3 8.0 8.89 1 13.6 29.4 25 QR
1SMA8.5AT3 8.5 9.44 1 14.4 27.8 5.0 QT
1SMA9.0AT3 9.0 10 1 15.4 26.0 2.5 QV
1SMA10AT3 10 11.1 1 17.0 23.5 2.5 QX
1SMA11AT3 11 12.2 1 18.2 22.0 2.5 QZ
1SMA12AT3 12 13.3 1 19.9 20.1 2.5 RE
1SMA13AT3 13 14.4 1 21.5 18.6 2.5 RG
1SMA14AT3 14 15.6 1 23.2 17.2 2.5 RK
1SMA15AT3 15 16.7 1 24.4 16.4 2.5 RM
1SMA16AT3 16 17.8 1 26.0 15.4 2.5 RP
1SMA17AT3 17 18.9 1 27.6 14.5 2.5 RR
1SMA18AT3 18 20 1 29.2 13.7 2.5 RT
1SMA20AT3 20 22.2 1 32.4 12.3 2.5 RV
1SMA22AT3 22 24.4 1 35.5 11.3 2.5 RX
1SMA24AT3 24 26.7 1 38.9 10.3 2.5 RZ
1SMA26AT3 26 28.9 1 42.1 9.5 2.5 SE
1SMA28AT3 28 31.1 1 45.4 8.8 2.5 SG
1SMA30AT3 30 33.3 1 48.4 8.3 2.5 SK
1SMA33AT3 33 36.7 1 53.3 7.5 2.5 SM
1SMA36AT3 36 40 1 58.1 6.9 2.5 SP
1SMA40AT3 40 44.4 1 64.5 6.2 2.5 SR
1SMA43AT3 43 47.8 1 69.4 5.8 2.5 ST
1SMA45AT3 45 50 1 72.2 5.5 2.5 SV
1SMA48AT3 48 53.3 1 77.4 5.2 2.5 SX
1SMA51AT3 51 56.7 1 82.4 4.9 2.5 SZ
1SMA54AT3 54 60 1 87.1 4.6 2.5 TE
1SMA58AT3 58 64.4 1 93.6 4.8 2.5 TG
1SMA60AT3 60 66.7 1 96.8 4.1 2.5 TK
1SMA64AT3 64 71.1 1 103.0 3.9 2.5 TM
1SMA70AT3 70 77.8 1 113.0 3.5 2.5 TP
1SMA75AT3 75 83.3 1 121.0 3.3 2.5 TR
1SMA78AT3 78 86.7 1 126.0 3.2 2.5 TS

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TVS — in Surface Mount (continued)

Table 10. 1SMA Series Bidirectional Zener Overvoltage Transient Suppressors; 400 Watts Peak Power
@ 1 ms Surge

ELECTRICAL CHARACTERISTICS

Breakdown Voltage Maximum

Working Maximum
Reverse Voltage Maximum
Peak Reverse
@ IRSM Reverse Leakage Devce
Device Reverse VBR Surge Cur-
IT (Clamping @ VRWM Marking
Voltage VRWM Volts rent IPP
mA Voltage) IR (µA)
(Volts) (Min) (Amps)
VC (Volts)

IRSM
IRSM
SMA 2
CASE 403B–01
PLASTIC 0 1 2 3 4 5 6
Time (ms)
Surge Current Characterisitcs

1SMA10CAT3 10 11.1 1 17.0 23.5 2.5 QXC

1SMA11CAT3 11 12.2 1 18.2 22.0 2.5 QZC
1SMA12CAT3 12 13.3 1 19.9 20.1 2.5 REC
1SMA13CAT3 13 14.4 1 21.5 18.6 2.5 RGC
1SMA14CAT3 14 15.6 1 23.2 17.2 2.5 RKC
1SMA15CAT3 15 16.7 1 24.4 16.4 2.5 RMC
1SMA16CAT3 16 17.8 1 26.0 15.4 2.5 RPC
1SMA17CAT3 17 18.9 1 27.6 14.5 2.5 RRC
1SMA18CAT3 18 20 1 29.2 13.7 2.5 RTC
1SMA20CAT3 20 22.2 1 32.4 12.3 2.5 RVC
1SMA22CAT3 22 24.4 1 35.5 11.3 2.5 RXC
1SMA24CAT3 24 26.7 1 38.9 10.3 2.5 RZC
1SMA26CAT3 26 28.9 1 42.1 9.5 2.5 SEC
1SMA28CAT3 28 31.1 1 45.4 8.8 2.5 SGC
1SMA30CAT3 30 33.3 1 48.4 8.3 2.5 SKC
1SMA33CAT3 33 36.7 1 53.3 7.5 2.5 SMC
1SMA36CAT3 36 40 1 58.1 6.9 2.5 SPC
1SMA40CAT3 40 44.4 1 64.5 6.2 2.5 SRC
1SMA43CAT3 43 47.8 1 69.4 5.8 2.5 STC
1SMA45CAT3 45 50 1 72.2 5.5 2.5 SVC
1SMA48CAT3 48 53.3 1 77.4 5.2 2.5 SXC
1SMA51CAT3 51 56.7 1 82.4 4.9 2.5 SZC
1SMA54CAT3 54 60 1 87.1 4.6 2.5 TEC
1SMA58CAT3 58 64.4 1 93.6 4.3 2.5 TGC
1SMA60CAT3 60 66.7 1 96.8 4.1 2.5 TKC
1SMA64CAT3 64 71.1 1 103.0 3.9 2.5 TMC
1SMA70CAT3 70 77.8 1 113.0 3.5 2.5 TPC
1SMA75CAT3 75 83.3 1 121.0 3.3 2.5 TRC
1SMA78CAT3 78 86.7 1 126.0 3.2 2.5 TSC

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TVS — in Surface Mount (continued)

Table 11. 1SMB Series Unidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1ms Surge
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted).
Working g Breakdown Voltage Maximum Maximum
Peak
P kRReverse Clamping
Cl i Peak Reverse L
R Leakage
k
VBR @ IT
Voltage Voltage Pulse
P lse Current
C rrent @ VR
VRWM Volts VC @ Ipp Ipp IR Device
Device Volts Min mA Volts Amps µA Marking
IRSM
IRSM
SMB 2
CASE 403A
PLASTIC 0 1 2 3 4 5 6
Time (ms)
Surge Current Characterisitcs
1SMB5.0AT3 5.0 6.40 10 9.2 65.2 800 KE
1SMB6.0AT3 6.0 6.67 10 10.3 58.3 800 KG
1SMB6.5AT3 6.5 7.22 10 11.2 53.6 500 KK
1SMB7.0AT3 7.0 7.78 10 12.0 50.0 200 KM
1SMB7.5AT3 7.5 8.33 1.0 12.9 46.5 100 KP
1SMB8.0AT3 8.0 8.89 1.0 13.6 44.1 50 KR
1SMB8.5AT3 8.5 9.44 1.0 14.4 41.7 10 KT
1SMB9.0AT3 9.0 10.0 1.0 15.4 39.0 5.0 KV
1SMB10AT3 10 11.1 1.0 17.0 35.3 5.0 KX
1SMB11AT3 11 12.2 1.0 18.2 33.0 5.0 KZ
1SMB12AT3 12 13.3 1.0 19.9 30.2 5.0 LE
1SMB13AT3 13 14.4 1.0 21.5 27.9 5.0 LG
1SMB14AT3 14 15.6 1.0 23.2 25.8 5.0 LK
1SMB15AT3 15 16.7 1.0 24.4 24.0 5.0 LM
1SMB16AT3 16 17.8 1.0 26.0 23.1 5.0 LP
1SMB17AT3 17 18.9 1.0 27.6 21.7 5.0 LR
1SMB18AT3 18 20.0 1.0 29.2 20.5 5.0 LT
1SMB20AT3 20 22.2 1.0 32.4 18.5 5.0 LV
1SMB22AT3 22 24.4 1.0 35.5 16.9 5.0 LX
1SMB24AT3 24 26.7 1.0 38.9 15.4 5.0 LZ
1SMB26AT3 26 28.9 1.0 42.1 14.2 5.0 ME
1SMB28AT3 28 31.1 1.0 45.4 13.2 5.0 MG
1SMB30AT3 30 33.3 1.0 48.4 12.4 5.0 MK
1SMB33AT3 33 36.7 1.0 53.3 11.3 5.0 MM
1SMB36AT3 36 40.0 1.0 58.1 10.3 5.0 MP
1SMB40AT3 40 44.4 1.0 64.5 9.3 5.0 MR
1SMB43AT3 43 47.8 1.0 69.4 8.6 5.0 MT
1SMB45AT3 45 50.0 1.0 72.7 8.3 5.0 MV
1SMB48AT3 48 53.3 1.0 77.4 7.7 5.0 MX
1SMB51AT3 51 56.7 1.0 82.4 7.3 5.0 MZ
1SMB54AT3 54 60.0 1.0 87.1 6.9 5.0 NE
1SMB58AT3 58 64.4 1.0 93.6 6.4 5.0 NG
1SMB60AT3 60 66.7 1.0 96.8 6.2 5.0 NK
1SMB64AT3 64 71.1 1.0 103 5.8 5.0 NM
1SMB70AT3 70 77.8 1.0 113 5.3 5.0 NP
1SMB75AT3 75 83.3 1.0 121 4.9 5.0 NR
1SMB78AT3 78 86.7 1.0 126 4.7 5.0 NT
1SMB85AT3 85 94.4 1.0 137 4.4 5.0 NV
1SMB90AT3 90 100 1.0 146 4.1 5.0 NX
1SMB100AT3 100 111 1.0 162 3.7 5.0 NZ
A transient suppressor is normally selected according to the reverse Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.

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TVS — in Surface Mount (continued)

Table 11. 1SMB Series Unidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1 ms Surge (continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted).
Working g Breakdown Voltage Maximum Maximum
Peak
P kRReverse Clamping
Cl i Peak Reverse L
R Leakage
k
VBR @ IT
Voltage Voltage Pulse
P lse Current
C rrent @ VR
VRWM Volts VC @ Ipp Ipp IR Device
Device Volts Min mA Volts Amps µA Marking

IRSM
IRSM
SMB 2
CASE 403A
PLASTIC 0 1 2 3 4 5 6
Time (ms)
Surge Current Characterisitcs

1SMB110AT3 110 122 1.0 177 3.4 5.0 PE

1SMB120AT3 120 133 1.0 193 3.1 5.0 PG
1SMB130AT3 130 144 1.0 209 2.9 5.0 PK
1SMB150AT3 150 167 1.0 243 2.5 5.0 PM
1SMB160AT3 160 178 1.0 259 2.3 5.0 PP
1SMB170AT3 170 189 1.0 275 2.2 5.0 PR
A transient suppressor is normally selected according to the reverse Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.

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TVS — in Surface Mount (continued)

Table 12. 1SMB Series Bidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1ms Surge
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted).
Working g Breakdown Voltage Maximum Maximum
Peak
P kRReverse Clamping
Cl i Peak Reverse L
R Leakage
k
VBR @ IT
Voltage Voltage Pulse
P lse Current
C rrent @ VR
VRWM Volts VC @ Ipp Ipp IR Device
Device Volts Min mA Volts Amps µA Marking

IRSM
IRSM
SMB 2
CASE 403A
PLASTIC 0 1 2 3 4 5 6
Time (ms)
Surge Current Characterisitcs

1SMB10CAT3 10 11.1 1.0 17.0 35.3 5.0 KXC

1SMB11CAT3 11 12.2 1.0 18.2 33.0 5.0 KZC
1SMB12CAT3 12 13.3 1.0 19.9 30.2 5.0 LEC
1SMB13CAT3 13 14.4 1.0 21.5 27.9 5.0 LGC
1SMB14CAT3 14 15.6 1.0 23.2 25.8 5.0 LKC
1SMB15CAT3 15 16.7 1.0 24.4 24.0 5.0 LMC
1SMB16CAT3 16 17.8 1.0 26.0 23.1 5.0 LPC
1SMB17CAT3 17 18.9 1.0 27.6 21.7 5.0 LRC
1SMB18CAT3 18 20.0 1.0 29.2 20.5 5.0 LTC
1SMB20CAT3 20 22.2 1.0 32.4 18.5 5.0 LVC
1SMB22CAT3 22 24.4 1.0 35.5 16.9 5.0 LXC
1SMB24CAT3 24 26.7 1.0 38.9 15.4 5.0 LZC
1SMB26CAT3 26 28.9 1.0 42.1 14.2 5.0 MEC
1SMB28CAT3 28 31.1 1.0 45.4 13.2 5.0 MGC
1SMB30CAT3 30 33.3 1.0 48.4 12.4 5.0 MKC
1SMB33CAT3 33 36.7 1.0 53.3 11.3 5.0 MMC
1SMB36CAT3 36 40.0 1.0 58.1 10.3 5.0 MPC
1SMB40CAT3 40 44.4 1.0 64.5 9.3 5.0 MRC
1SMB43CAT3 43 47.8 1.0 69.4 8.6 5.0 MTC
1SMB45CAT3 45 50.0 1.0 72.7 8.3 5.0 MVC
1SMB48CAT3 48 53.3 1.0 77.4 7.7 5.0 MXC
1SMB51CAT3 51 56.7 1.0 82.4 7.3 5.0 MZC
1SMB54CAT3 54 60.0 1.0 87.1 6.9 5.0 NEC
1SMB58CAT3 58 64.4 1.0 93.6 6.4 5.0 NGC
1SMB60CAT3 60 66.7 1.0 96.8 6.2 5.0 NKC
1SMB64CAT3 64 71.1 1.0 103 5.8 5.0 NMC
1SMB70CAT3 70 77.8 1.0 113 5.3 5.0 NPC
1SMB75CAT3 75 83.3 1.0 121 4.9 5.0 NRC
1SMB78CAT3 78 86.7 1.0 126 4.7 5.0 NTC
A transient suppressor is normally selected according to the reverse Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.

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TVS — in Surface Mount (continued)

Table 13. P6SMB Series Unidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1 ms Surge
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 50 A for all types.
Maximum
Reverse
Breakdown Voltage
Working Maximum Maximum Voltage
Peak Reverse Reverse @ IPP Maximum
VBR @ IT Reverse Leakage Surge (Clamping Temperature
Volts Voltage @ VRWM Current Voltage) Coefficient
VRWM IR IPP VC of VBR Device
Device Min Nom Max mA Volts µA Amps Volts %/°C Marking

IRSM
IRSM
SMB 2
CASE 403A
PLASTIC 0 1 2 3 4 5 6
Time (ms)
Surge Current Characterisitcs

P6SMB6.8AT3 6.45 6.8 7.14 10 5.8 1000 57 10.5 0.057 6V8A

P6SMB7.5AT3 7.13 7.5 7.88 10 6.4 500 53 11.3 0.061 7V5A
P6SMB8.2AT3 7.79 8.2 8.61 10 7.02 200 50 12.1 0.065 8V2A
P6SMB9.1AT3 8.65 9.1 9.55 1 7.78 50 45 13.4 0.068 9V1A
P6SMB10AT3 9.5 10 10.5 1 8.55 10 41 14.5 0.073 10A
P6SMB11AT3 10.5 11 11.6 1 9.4 5 38 15.6 0.075 11A
P6SMB12AT3 11.4 12 12.6 1 10.2 5 36 16.7 0.078 12A
P6SMB13AT3 12.4 13 13.7 1 11.1 5 33 18.2 0.081 13A
P6SMB15AT3 14.3 15 15.8 1 12.8 5 28 21.2 0.084 15A
P6SMB16AT3 15.2 16 16.8 1 13.6 5 27 22.5 0.086 16A
P6SMB18AT3 17.1 18 18.9 1 15.3 5 24 25.2 0.088 18A
P6SMB20AT3 19 20 21 1 17.1 5 22 27.7 0.09 20A
P6SMB22AT3 20.9 22 23.1 1 18.8 5 20 30.6 0.092 22A
P6SMB24AT3 22.8 24 25.2 1 20.5 5 18 33.2 0.094 24A
P6SMB27AT3 25.7 27 28.4 1 23.1 5 16 37.5 0.096 27A
P6SMB30AT3 28.5 30 31.5 1 25.6 5 14.4 41.4 0.097 30A
P6SMB33AT3 31.4 33 34.7 1 28.2 5 13.2 45.7 0.098 33A
P6SMB36AT3 34.2 36 37.8 1 30.8 5 12 49.9 0.099 36A
P6SMB39AT3 37.1 39 41 1 33.3 5 11.2 53.9 0.1 39A
P6SMB43AT3 40.9 43 45.2 1 36.8 5 10.1 59.3 0.101 43A
P6SMB47AT3 44.7 47 49.4 1 40.2 5 9.3 64.8 0.101 47A
P6SMB51AT3 48.5 51 53.6 1 43.6 5 8.6 70.1 0.102 51A
P6SMB56AT3 53.2 56 58.8 1 47.8 5 7.8 77 0.103 56A
P6SMB62AT3 58.9 62 65.1 1 53 5 7.1 85 0.104 62A
P6SMB68AT3 64.6 68 71.4 1 58.1 5 6.5 92 0.104 68A
P6SMB75AT3 71.3 75 78.8 1 64.1 5 5.8 103 0.105 75A
P6SMB82AT3 77.9 82 86.1 1 70.1 5 5.3 113 0.105 82A
P6SMB91AT3 86.5 91 95.5 1 77.8 5 4.8 125 0.106 91A
P6SMB100AT3 95 100 105 1 85.5 5 4.4 137 0.106 100A
P6SMB110AT3 105 110 116 1 94 5 4 152 0.107 110A
P6SMB120AT3 114 120 126 1 102 5 3.6 165 0.107 120A
P6SMB130AT3 124 130 137 1 111 5 3.3 179 0.107 130A
P6SMB150AT3 143 150 158 1 128 5 2.9 207 0.108 150A
P6SMB160AT3 152 160 168 1 136 5 2.7 219 0.108 160A
P6SMB170AT3 162 170 179 1 145 5 2.6 234 0.108 170A
P6SMB180AT3 171 180 189 1 154 5 2.4 246 0.108 180A
P6SMB200AT3 190 200 210 1 171 5 2.2 274 0.108 200A

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TVS — in Surface Mount (continued)

Table 14. P6SMB Series Bidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power
@ 1 ms Surge
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 50 A for all types.
Maximum
Reverse
Breakdown Voltage
Working Maximum Maximum Voltage
Peak Reverse Reverse @ IPP Maximum
VBR @ IT Reverse Leakage Surge (Clamping Temperature
Volts Voltage @ VRWM Current Voltage) Coefficient
VRWM IR IPP VC of VBR Device
Device Min Nom Max mA Volts µA Amps Volts %/°C Marking

IRSM
IRSM
SMB 2
CASE 403A
PLASTIC 0 1 2 3 4 5 6
Time (ms)
Surge Current Characterisitcs

P6SMB11CAT3 10.5 11 11.6 1 9.4 5 38 15.6 0.075 11C

P6SMB12CAT3 11.4 12 12.6 1 10.2 5 36 16.7 0.078 12C
P6SMB13CAT3 12.4 13 13.7 1 11.1 5 33 18.2 0.081 13C
P6SMB15CAT3 14.3 15 15.8 1 12.8 5 28 21.2 0.084 15C
P6SMB16CAT3 15.2 16 16.8 1 13.6 5 27 22.5 0.086 16C
P6SMB18CAT3 17.1 18 18.9 1 15.3 5 24 25.2 0.088 18C
P6SMB20CAT3 19 20 21 1 17.1 5 22 27.7 0.09 20C
P6SMB22CAT3 20.9 22 23.1 1 18.8 5 20 30.6 0.092 22C
P6SMB24CAT3 22.8 24 25.2 1 20.5 5 18 33.2 0.094 24C
P6SMB27CAT3 25.7 27 28.4 1 23.1 5 16 37.5 0.096 27C
P6SMB30CAT3 28.5 30 31.5 1 25.6 5 14.4 41.4 0.097 30C
P6SMB33CAT3 31.4 33 34.7 1 28.2 5 13.2 45.7 0.098 33C
P6SMB36CAT3 34.2 36 37.8 1 30.8 5 12 49.9 0.099 36C
P6SMB39CAT3 37.1 39 41 1 33.3 5 11.2 53.9 0.1 39C
P6SMB43CAT3 40.9 43 45.2 1 36.8 5 10.1 59.3 0.101 43C
P6SMB47CAT3 44.7 47 49.4 1 40.2 5 9.3 64.8 0.101 47C
P6SMB51CAT3 48.5 51 53.6 1 43.6 5 8.6 70.1 0.102 51C
P6SMB56CAT3 53.2 56 58.8 1 47.8 5 7.8 77 0.103 56C
P6SMB62CAT3 58.9 62 65.1 1 53 5 7.1 85 0.104 62C
P6SMB68CAT3 64.6 68 71.4 1 58.1 5 6.5 92 0.104 68C
P6SMB75CAT3 71.3 75 78.8 1 64.1 5 5.8 103 0.105 75C
P6SMB82CAT3 77.9 82 86.1 1 70.1 5 5.3 113 0.105 82C
P6SMB91CAT3 86.5 91 95.5 1 77.8 5 4.8 125 0.106 91C

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TVS — in Surface Mount (continued)

Table 15. ISMC Series Unidirectional Overvoltage Transient Suppressors; 1500 Watts Peak Power
@ 1 ms Surge
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted).
Working
Breakdown Voltage*
Peak Maximum Maximum
Reverse VBR @ IT Clamping Peak Reverse Leakage
Voltage Voltage P lse Current
Pulse C rrent @ VR
Volts Device
VR VC @ Ipp Ipp IR
Device Min mA Marking
Volts Volts Amps µA

IRSM
IRSM
SMC 2
CASE 403B
PLASTIC 0 1 2 3 4 5 6
Time (ms)
Surge Current Characterisitcs

1SMC5.0AT3 5.0 6.40 10 9.2 163.0 1000 GDE

1SMC6.0AT3 6.0 6.67 10 10.3 145.6 1000 GDG
1SMC6.5AT3 6.5 7.22 10 11.2 133.9 500 GDK
1SMC7.0AT3 7.0 7.78 10 12.0 125.0 200 GDM
1SMC7.5AT3 7.5 8.33 1.0 12.9 116.3 100 GDP
1SMC8.0AT3 8.0 8.89 1.0 13.6 110.3 50 GDR
1SMC8.5AT3 8.5 9.44 1.0 14.4 104.2 20 GDT
1SMC9.0AT3 9.0 10.0 1.0 15.4 97.4 10 GDV
1SMC10AT3 10 11.1 1.0 17.0 88.2 5.0 GDX
1SMC11AT3 11 12.2 1.0 18.2 82.4 5.0 GDZ
1SMC12AT3 12 13.3 1.0 19.9 75.3 5.0 GEE
1SMC13AT3 13 14.4 1.0 21.5 69.7 5.0 GEG
1SMC14AT3 14 15.6 1.0 23.2 64.7 5.0 GEK
1SMC15AT3 15 16.7 1.0 24.4 61.5 5.0 GEM
1SMC16AT3 16 17.8 1.0 26.0 57.7 5.0 GEP
1SMC17AT3 17 18.9 1.0 27.6 53.3 5.0 GER
1SMC18AT3 18 20.0 1.0 29.2 51.4 5.0 GET
1SMC20AT3 20 22.2 1.0 32.4 46.3 5.0 GEV
1SMC22AT3 22 24.4 1.0 35.5 42.2 5.0 GEX
1SMC24AT3 24 26.7 1.0 38.9 38.6 5.0 GEZ
1SMC26AT3 26 28.9 1.0 42.1 35.6 5.0 GFE
1SMC28AT3 28 31.1 1.0 45.4 33.0 5.0 GFG
1SMC30AT3 30 33.3 1.0 48.4 31.0 5.0 GFK
1SMC33AT3 33 36.7 1.0 53.3 28.1 5.0 GFM
1SMC36AT3 36 40.0 1.0 58.1 25.8 5.0 GFP
1SMC40AT3 40 44.4 1.0 64.5 23.2 5.0 GFR
1SMC43AT3 43 47.8 1.0 69.4 21.6 5.0 GFT
1SMC45AT3 45 50.0 1.0 72.7 20.6 5.0 GFV
1SMC48AT3 48 53.3 1.0 77.4 19.4 5.0 GFX
1SMC51AT3 51 56.7 1.0 82.4 18.2 5.0 GFZ
1SMC54AT3 54 60.0 1.0 87.1 17.2 5.0 GGE
1SMC58AT3 58 64.4 1.0 93.6 16.0 5.0 GGG
1SMC60AT3 60 66.7 1.0 96.8 15.5 5.0 GGK
1SMC64AT3 64 71.1 1.0 103 14.6 5.0 GGM
1SMC70AT3 70 77.8 1.0 113 13.3 5.0 GGP
1SMC75AT3 75 83.3 1.0 121 12.4 5.0 GGR
1SMC78AT3 78 86.7 1.0 126 11.4 5.0 GGT
A transient suppressor is normally selected according to the reverse Working Peak Reverse Voltage (VRWM) which should be equal to or
greater than the DC or continuous peak operating voltage level.

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TVS — in Surface Mount (continued)

Table 16. 1.5 SMC Series Unidirectional Overvoltage Transient Suppressors; 1500 Watts Peak Power
@ 1 ms Surge
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 100 A for all types.
Maximum
Reverse
Breakdown Voltage
Working Maximum Maximum Voltage
Peak Reverse Reverse @ IPP Maximum
VBR @ IT Reverse Leakage Surge (Clamping Temperature
Volts Voltage @ VRWM Current Voltage) Coefficient
VRWM IR IPP VC of VBR Device
Device Min Nom Max mA Volts µA Amps Volts %/°C Marking

IRSM
IRSM
SMC 2
CASE 403
PLASTIC 0 1 2 3 4 5 6
Time (ms)
Surge Current Characterisitcs

1.5SMC6.8AT3 6.45 6.8 7.14 10 5.8 1000 143 10.5 0.057 6V8A
1.5SMC7.5AT3 7.13 7.5 7.88 10 6.4 500 132 11.3 0.061 7V5A
1.5SMC8.2AT3 7.79 8.2 8.61 10 7.02 200 124 12.1 0.065 8V2A
1.5SMC9.1AT3 8.65 9.1 9.55 1 7.78 50 112 13.4 0.068 9V1A
1.5SMC10AT3 9.5 10 10.5 1 8.55 10 103 14.5 0.073 10A
1.5SMC11AT3 10.5 11 11.6 1 9.4 5 96 15.6 0.075 11A
1.5SMC12AT3 11.4 12 12.6 1 10.2 5 90 16.7 0.078 12A
1.5SMC13AT3 12.4 13 13.7 1 11.1 5 82 18.2 0.081 13A
1.5SMC15AT3 14.3 15 15.8 1 12.8 5 71 21.2 0.084 15A
1.5SMC16AT3 15.2 16 16.8 1 13.6 5 67 22.5 0.086 16A
1.5SMC18AT3 17.1 18 18.9 1 15.3 5 59.5 25.2 0.088 18A
1.5SMC20AT3 19 20 21 1 17.1 5 54 27.7 0.09 20A
1.5SMC22AT3 20.9 22 23.1 1 18.8 5 49 30.6 0.092 22A
1.5SMC24AT3 22.8 24 25.2 1 20.5 5 45 33.2 0.094 24A
1.5SMC27AT3 25.7 27 28.4 1 23.1 5 40 37.5 0.096 27A
1.5SMC30AT3 28.5 30 31.5 1 25.6 5 36 41.4 0.097 30A
1.5SMC33AT3 31.4 33 34.7 1 28.2 5 33 45.7 0.098 33A
1.5SMC36AT3 34.2 36 37.8 1 30.8 5 30 49.9 0.099 36A
1.5SMC39AT3 37.1 39 41 1 33.3 5 28 53.9 0.1 39A
1.5SMC43AT3 40.9 43 45.2 1 36.8 5 25.3 59.3 0.101 43A
1.5SMC47AT3 44.7 47 49.4 1 40.2 5 23.2 64.8 0.101 47A
1.5SMC51AT3 48.5 51 53.6 1 43.6 5 21.4 70.1 0.102 51A
1.5SMC56AT3 53.2 56 58.8 1 47.8 5 19.5 77 0.103 56A
1.5SMC62AT3 58.9 62 65.1 1 53 5 17.7 85 0.104 62A
1.5SMC68AT3 64.6 68 71.4 1 58.1 5 16.3 92 0.104 68A
1.5SMC75AT3 71.3 75 78.8 1 64.1 5 14.6 103 0.105 75A
1.5SMC82AT3 77.9 82 86.1 1 70.1 5 13.3 113 0.105 82A
1.5SMC91AT3 86.5 91 95.5 1 77.8 5 12 125 0.106 91A

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Multiple TVS — Duals in Surface Mount

MMBZ15VDLT1 — Common Cathode Series

Table 17. SOT–23 Bipolar Zener Overvoltage Transient Suppressor; 40 Watts Peak Power (10 x 1000
s)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BIDIRECTIONAL (Circuit tied to Pins 1 and 2)
(VF = 0.9 V Max @ IF = 10 mA)

Breakdown Voltage Reverse Max Max Reverse

Max Maximum
Voltage Reverse Voltage @ IPP
Reverse Temperature
VBR (Note 1.) Working Surge (Clamping
Device Leakage Coefficient of
(V) @ IT Peak Current Voltage)
Current VBR
(mA) VRWM IPP VC
Min Nom Max IR (nA) (mV/°C)
(V) (A) (V)

3
CASE 318–08 1

TO–236AB 3
1 LOW PROFILE SOT–23 2

MMBZ15VDLT1 14.3 15 15.8 1.0 12.8 100 1.9 21.2 12

(VF = 1.1 V Max @ IF = 200 mA)

MMBZ27VCLT1 25.65 27 28.35 1.0 22 50 1.0 38 26
1. VBR measured at pulse test current IT at an ambient temperature of 25°C.

MMBZ5V6ALT1 — Common Anode Series

Table 18. SOT–23 Dual Zener Overvoltage Transient Suppressor; 24 Watts Peak Power (10 x 1000
s)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)

Max Reverse Max

Max Zener Impedance
Breakdown Voltage Leakage Max Reverse Max
(Note 3.)
Current Reverse Voltage @ Temp
Surge
S rge IPP Co–
Device
VBR (Note 2.) Current (Clamping efficient
(V) @ IT IR @ VR ZZT @ IZT ZZK @ IZK IPP Voltage) of VBR
(mA) (µA) (V) (Ω) (mA) (Ω) (mA) (A) VC (mV/°C)
Min Nom Max (V)

3 CASE 318–08 1
STYLE 12 3
1 LOW PROFILE SOT–23 2

2
PLASTIC

MMBZ5V6ALT1 5.32 5.6* 5.88 20 5.0 3.0 11 1600 0.25 3.0 8.0 1.26
MMBZ6V2ALT1 5.89 6.2* 6.51 1.0 0.5 3.0 — — — 2.76 8.7 2.80

(VF = 1.1 V Max @ IF = 200 mA)

MMBZ6V8ALT1 6.46 6.8 7.14 1.0 0.5 4.5 — — — 2.5 9.6 3.40
MMBZ9V1ALT1 8.65 9.1 9.56 1.0 0.3 6.0 — — — 1.7 14 7.50
MMBZ10VALT1 9.50 10 10.5 1.0 0.3 6.5 – – – 1.7 14.2 7.50
2. VBR measured at pulse test current IT at an ambient temperature of 25°C.
3. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits
are IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.
*Other voltages are available; please contact product marketing.

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Multiple TVS — Duals in Surface Mount (continued)

MMBZ5V6ALT1 — Common Anode Series (continued)

Table 19. SOT–23 Dual Zener Overvoltage Transient Suppressor; 40 Watts Peak Power (10 x 1000
s)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 1.1 V Max @ IF = 200 mA)
Max
Breakdown Voltage
Reverse Max Reverse
Max Maximum
V lt
Voltage R
Reverse V l
Voltage @
Reverse Temperature
VBR (Note 4.) Working Surge IPP
Device Leakage Coefficient
(V) @ IT Peak Current (Clamping
Current of VBR
(mA) VRWM IPP Voltage)
IR (nA) (mV/°C)
(Volts) (A) VC
Min Nom Max
(V)

3 CASE 318–08 1
STYLE 12 3
1 LOW PROFILE SOT–23 2

2
PLASTIC

MMBZ12VALT1 11.40 12 12.60 1.0 8.5 200 2.35 17 7.50

MMBZ15VALT1 14.25 15 15.75 1.0 12.0 50 1.9 21 12.30
MMBZ18VALT1 17.10 18 18.90 1.0 14.5 50 1.6 25 15.30
MMBZ20VALT1 19.00 20 21.00 1.0 17.0 50 1.4 28 17.20
MMBZ27VALT1 25.65 27 28.35 1.0 22.0 50 1.0 40 24.30
MMBZ33VALT1 31.35 33 34.65 1.0 26.0 50 0.87 46 30.40
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.

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Multiple TVS — Quads in Surface Mount

MMQA Series
Table 20. SC–74 Quad Transient Voltage Suppressor; 24 Watts Peak Power (10 x 1000
s),
150 Watts Peak Power (8.0 x 20
s)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6)
(VF = 0.9 V Max @ IF = 10 mA)

Max
Max Reverse Max
Breakdown Voltage Max Reverse
Leakage Current Max Zener Temp
Reverse Voltage @
Impedance Coef
Coef–
Surge
S rge IPP
ficient
VZT (V) @ IZT IR VRWM Current (Clamping
of VZ
Voltage)
ZZT @ IZT IPP VC
Device Min Nom Max (mA) (nA) (V) (mV/°C)
(Ω) (mA) (A) (V)

1 6
32
1 CASE 318F-02
STYLE 1 2 5
45 SC-74 PLASTIC
6
3 4

MMQA5V6T1,T3 5.32 5.6 5.88 1.0 2000 3.0 400 3.0 8.0 1.26
MMQA6V2T1,T3 5.89 6.2 6.51 1.0 700 4.0 300 2.66 9.0 10.6
MMQA6V8T1,T3 6.46 6.8 7.14 1.0 500 4.3 300 2.45 9.8 10.9
MMQA12VT1,T3 11.4 12 12.6 1.0 75 9.1 80 1.39 17.3 14
MMQA13VT1,T3 12.4 13 13.7 1.0 75 9.8 80 1.29 18.6 15
MMQA15VT1,T3 14.3 15 15.8 1.0 75 11 80 1.1 21.7 16
MMQA18VT1,T3 17.1 18 18.9 1.0 75 14 80 0.923 26 19
MMQA20VT1,T3 19 20 21 1.0 75 15 80 0.84 28.6 20.1
MMQA21VT1,T3 20 21 22.1 1.0 75 16 80 0.792 30.3 21
MMQA22VT1,T3 20.9 22 23.1 1.0 75 17 80 0.758 31.7 22
MMQA24VT1,T3 22.8 24 25.2 1.0 75 18 100 0.694 34.6 25
MMQA27VT1,T3 25.7 27 28.4 1.0 75 21 125 0.615 39 28
MMQA30VT1,T3 28.5 30 31.5 1.0 75 23 150 0.554 43.3 32
MMQA33VT1,T3 31.4 33 34.7 1.0 75 25 200 0.504 48.6 37

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Multiple TVS — Quads in Surface Mount (continued)
Table 21. SC–74 Quad Transient Voltage Suppressor; 40 Watts Peak Power (10 x 1000
s),
350 Watts Peak Power (8.0 x 20
s)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6)
(VF = 0.9 V Max @ IF = 10 mA)

Max
Max Reverse Max
Breakdown Voltage Max Reverse
Leakage Current Max Zener Temp
Reverse Voltage @
Impedance Coef
Coef–
Surge
S rge IPP
ficient
VZT (V) @ IZT IR VRWM Current (Clamping
of VZ
Voltage)
ZZT @ IZT IPP VC
Device Min Nom Max (mA) (nA) (V) (mV/°C)
(Ω) (mA) (A) (V)

1 6
32
1 CASE 318F-02
STYLE 1 2 5
45 SC-74 PLASTIC
6
3 4

SMS05T1 6.0 6.6 7.2 – 1000 5.0 – 23 15.5 –

MSQA6V1W5
Table 22. SC–88A/SOT–353 Quad Array for ESD Protection; 150 Watts (8.0 x 20
s)

Typical
Breakdown Voltage Leakage Current Max
Capacitance
Device VBR @ 1.0 mA (Volts) IR @ VRWM = 3.0 V VF @ IF = 200 mA
@ 0 V Bias
Min Nom Max (µA) (pF) (V)

1 5

CASE 419A 2
SC–88A/SOT–353

3 4

MSQA6V1W5 6.1 6.6 7.2 1.0 90 1.25

NOTE: Contact ON Semiconductor Sales for additional voltages.

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Multiple TVS — Quads in Surface Mount (continued)

DF6A6.8FU
Table 23. SC–88 Quad Array for ESD Protection

Maximum Leakage Typical

Breakdown Voltage Max
Current Capacitance
Device VBR @ 1.0 mA (Volts) VF @ IF = 10 mA
IR @ VRWM @ 0 V Bias
Min Nom Max (µA) (pF) (V)

1 6
CASE 419B
SC–88 (SOT–363) 2 5
PLASTIC
3 4

DF6A6.8FU 6.4 6.8 7.2 1.0 40 1.25

NOTE: Contact ON Semiconductor Sales for additional voltages.

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 CHAPTER 3
Transient Voltage Suppressors –
Axial Leaded Data Sheets

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44
P6KE6.8A Series

600 Watt Peak Power

Surmetic-40 Zener Transient
Voltage Suppressors
Unidirectional*
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The P6KE6.8A series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are Cathode Anode
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and is ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications.
Specification Features:
• Working Peak Reverse Voltage Range – 5.8 to 171 V
• Peak Power – 600 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA above 10 V
AXIAL LEAD
• Maximum Temperature Coefficient Specified CASE 17
• UL 497B for Isolated Loop Circuit Protection STYLE 1

• Response Time is typically < 1 ns

Mechanical Characteristics:
L
CASE: Void-free, Transfer-molded, Thermosetting plastic P6KE
xxxA
FINISH: All external surfaces are corrosion resistant and leads are YYWW
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING: L = Assembly Location
230C, 1/16″ from the case for 10 seconds P6KExxxA = ON Device Code
POLARITY: Cathode indicated by polarity band YY = Year
WW = Work Week
MOUNTING POSITION: Any

MAXIMUM RATINGS
Rating Symbol Value Unit
ORDERING INFORMATION
Peak Power Dissipation (Note 1.) PPK 600 Watts
@ TL ≤ 25°C Device Package Shipping

Steady State Power Dissipation PD 5.0 Watts P6KExxxA Axial Lead 1000 Units/Box
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C 50 mW/°C P6KExxxARL Axial Lead 4000/Tape & Reel

Thermal Resistance, Junction–to–Lead RJL 15 °C/W

Forward Surge Current (Note 2.) IFSM 100 Amps
@ TA = 25°C
Operating and Storage TJ, Tstg – 55 to °C
Temperature Range +150
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute maximum.
*Please see P6KE6.8CA – P6KE200CA for Bidirectional devices.

 Semiconductor Components Industries, LLC, 2001 45 Publication Order Number:

March, 2001 – Rev. 4 P6KE6.8A/D
 P6KE6.8A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 3.5 V Max. @ IF (Note 6.) = 50 A)
IF
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage VC VBR VRWM
V
IR VF
IR Maximum Reverse Leakage Current @ VRWM IT
VBR Breakdown Voltage @ IT
IT Test Current
VBR Maximum Temperature Coefficient of VBR IPP
IF Forward Current
VF Forward Voltage @ IF Uni–Directional TVS

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 P6KE6.8A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 6.) = 50 A)
Breakdown Voltage VC @ IPP (Note 5.)
VRWM
(Note 3.) IR @ VRWM VBR (Note 4.) (Volts) @ IT VC IPP VBR
Device
Device Marking Volts µA Min Nom Max mA Volts A %/°C
P6KE6.8A P6KE6.8A 5.8 1000 6.45 6.80 7.14 10 10.5 57 0.057
P6KE7.5A P6KE7.5A 6.4 500 7.13 7.51 7.88 10 11.3 53 0.061
P6KE8.2A P6KE8.2A 7.02 200 7.79 8.2 8.61 10 12.1 50 0.065
P6KE9.1A P6KE9.1A 7.78 50 8.65 9.1 9.55 1 13.4 45 0.068
P6KE10A P6KE10A 8.55 10 9.5 10 10.5 1 14.5 41 0.073
P6KE11A P6KE11A 9.4 5 10.5 11.05 11.6 1 15.6 38 0.075
P6KE12A P6KE12A 10.2 5 11.4 12 12.6 1 16.7 36 0.078
P6KE13A P6KE13A 11.1 5 12.4 13.05 13.7 1 18.2 33 0.081
P6KE15A P6KE15A 12.8 5 14.3 15.05 15.8 1 21.2 28 0.084
P6KE16A P6KE16A 13.6 5 15.2 16 16.8 1 22.5 27 0.086
P6KE18A P6KE18A 15.3 5 17.1 18 18.9 1 25.2 24 0.088
P6KE20A P6KE20A 17.1 5 19 20 21 1 27.7 22 0.09
P6KE22A P6KE22A 18.8 5 20.9 22 23.1 1 30.6 20 0.092
P6KE24A P6KE24A 20.5 5 22.8 24 25.2 1 33.2 18 0.094
P6KE27A P6KE27A 23.1 5 25.7 27.05 28.4 1 37.5 16 0.096
P6KE30A P6KE30A 25.6 5 28.5 30 31.5 1 41.4 14.4 0.097
P6KE33A P6KE33A 28.2 5 31.4 33.05 34.7 1 45.7 13.2 0.098
P6KE36A P6KE36A 30.8 5 34.2 36 37.8 1 49.9 12 0.099
P6KE39A P6KE39A 33.3 5 37.1 39.05 41 1 53.9 11.2 0.1
P6KE43A P6KE43A 36.8 5 40.9 43.05 45.2 1 59.3 10.1 0.101
P6KE47A P6KE47A 40.2 5 44.7 47.05 49.4 1 64.8 9.3 0.101
P6KE51A P6KE51A 43.6 5 48.5 51.05 53.6 1 70.1 8.6 0.102
P6KE56A P6KE56A 47.8 5 53.2 56 58.8 1 77 7.8 0.103
P6KE62A P6KE62A 53 5 58.9 62 65.1 1 85 7.1 0.104
P6KE68A P6KE68A 58.1 5 64.6 68 71.4 1 92 6.5 0.104
P6KE75A P6KE75A 64.1 5 71.3 75.05 78.8 1 103 5.8 0.105
P6KE82A P6KE82A 70.1 5 77.9 82 86.1 1 113 5.3 0.105
P6KE91A P6KE91A 77.8 5 86.5 91 95.5 1 125 4.8 0.106
P6KE100A P6KE100A 85.5 5 95 100 105 1 137 4.4 0.106
P6KE110A P6KE110A 94 5 105 110.5 116 1 152 4 0.107
P6KE120A P6KE120A 102 5 114 120 126 1 165 3.6 0.107
P6KE130A P6KE130A 111 5 124 130.5 137 1 179 3.3 0.107
P6KE150A P6KE150A 128 5 143 150.5 158 1 207 2.9 0.108
P6KE160A P6KE160A 136 5 152 160 168 1 219 2.7 0.108
P6KE170A P6KE170A 145 5 162 170.5 179 1 234 2.6 0.108
P6KE180A P6KE180A 154 5 171 180 189 1 246 2.4 0.108
P6KE200A P6KE200A 171 5 190 200 210 1 274 2.2 0.108
3. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
4. VBR measured at pulse test current IT at an ambient temperature of 25°C
5. Surge current waveform per Figure 4 and derate per Figures 1 and 2.
6. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

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47
 P6KE6.8A Series

100

PEAK POWER OR CURRENT @ TA = 25 C

NONREPETITIVE PULSE 

PEAK PULSE DERATING IN % OF

WAVEFORM SHOWN IN
FIGURE 4
PPK , PEAK POWER (kW)

10
100

80

60
1
40

20
0.1 0
0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms 0 25 50 75 100 125 150 175 200

tP, PULSE WIDTH TA, AMBIENT TEMPERATURE (C)

Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve

PULSE WIDTH (tp) IS

tr ≤ 10 µs DEFINED AS THAT
POINT WHERE THE
10,000 PEAK VALUE – IPP PEAK CURRENT
100 DECAYS TO 50% OF IPP.
C, CAPACITANCE (pF)

VALUE (%)
MEASURED @
ZERO BIAS
1000 IPP
HALF VALUE –
2
50
100 MEASURED @
VRWM tP

10 0
0.1 1 10 100 1000 0 1 2 3 4
VBR, BREAKDOWN VOLTAGE (VOLTS) t, TIME (ms)
Figure 3. Capacitance versus Breakdown Voltage Figure 4. Pulse Waveform
PD, STEADY STATE POWER DISSIPATION (WATTS)

1
0.7
3/8″ 0.5
0.3
DERATING FACTOR

5 3/8″ 0.2
PULSE WIDTH
10 ms
4 0.1
0.07
3
0.05
1 ms
2 0.03
0.02 100 µs
1
10 µs
0.01
0 0.1 0.2 0.5 1 2 5 10 20 50 100
0 25 50 75 100 125 150 175 200
D, DUTY CYCLE (%)
TL, LEAD TEMPERATURE C)
Figure 5. Steady State Power Derating Figure 6. Typical Derating Factor for Duty Cycle

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48
 P6KE6.8A Series

APPLICATION NOTES

RESPONSE TIME minimum lead lengths and placing the suppressor device as
In most applications, the transient suppressor device is close as possible to the equipment or components to be
placed in parallel with the equipment or component to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitance operation.
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the DUTY CYCLE DERATING
transition from the operating voltage to the clamp voltage as The data of Figure 1 applies for non-repetitive conditions
shown in Figure 7. and at a lead temperature of 25°C. If the duty cycle increases,
The inductive effects in the device are due to actual the peak power must be reduced as indicated by the curves
turn-on time (time required for the device to go from zero of Figure 6. Average power must be derated as the lead or
current to full current) and lead inductance. This inductive ambient temperature rises above 25°C. The average power
effect produces an overshoot in the voltage across the derating curve normally given on data sheets may be
equipment or component being protected as shown in normalized and used for this purpose.
Figure 8. Minimizing this overshoot is very important in the At first glance the derating curves of Figure 6 appear to be
application, since the main purpose for adding a transient in error as the 10 ms pulse has a higher derating factor than
suppressor is to clamp voltage spikes. The P6KE6.8A series the 10 µs pulse. However, when the derating factor for a
has very good response time, typically < 1 ns and negligible given pulse of Figure 6 is multiplied by the peak power value
inductance. However, external inductive effects could of Figure 1 for the same pulse, the results follow the
produce unacceptable overshoot. Proper circuit layout, expected trend.

TYPICAL PROTECTION CIRCUIT

Zin

Vin LOAD VL

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 7. Figure 8.

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49
 P6KE6.8A Series

UL RECOGNITION*

The entire series including the bidirectional CA suffix has Breakdown test, Endurance Conditioning, Temperature test,
Underwriters Laboratory Recognition for the classification Dielectric Voltage-Withstand test, Discharge test and
of protectors (QVGV2) under the UL standard for safety several more.
497B and File #E 116110. Many competitors only have one Whereas, some competitors have only passed a
or two devices recognized or have recognition in a flammability test for the package material, we have been
non-protective category. Some competitors have no recognized for much more to be included in their protector
recognition at all. With the UL497B recognition, our parts category.
successfully passed several tests including Strike Voltage *Applies to P6KE6.8A, CA – P6KE200A, CA.

http://onsemi.com
50
P6KE6.8CA Series
600 Watt Peak Power
Surmetic-40 Zener Transient
Voltage Suppressors
Bidirectional*
The P6KE6.8CA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have http://onsemi.com
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and is ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications.
Specification Features:
• Working Peak Reverse Voltage Range – 5.8 to 171 V
• Peak Power – 600 Watts @ 1 ms
• ESD Rating of class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA above 10 V
• Maximum Temperature Coefficient Specified
• UL 497B for Isolated Loop Circuit Protection
AXIAL LEAD
CASE 17
• Response Time is Typically < 1 ns PLASTIC

Mechanical Characteristics:
CASE: Void-free, Transfer-molded, Thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
L
readily solderable P6KE
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: xxxCA
YYWW
230°C, 1/16” from the case for 10 seconds
POLARITY: Cathode band does not imply polarity L = Assembly Location
MOUNTING POSITION: Any P6KExxxCA = ON Device Code
YY = Year
WW = Work Week
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) PPK 600 Watts ORDERING INFORMATION
@ TL ≤ 25°C
Device Package Shipping
Steady State Power Dissipation PD 5 Watts
@ TL ≤ 75°C, Lead Length = 3/8″ P6KExxxCA Axial Lead 1000 Units/Box
Derated above TL = 75°C 50 mW/°C
P6KExxxCARL Axial Lead 4000/Tape & Reel
Thermal Resistance, RJL 15 °C/W
Junction–to–Lead
Operating and Storage TJ, Tstg – 55 to +150 °C
Temperature Range
1. Nonrepetitive current pulse per Figure 3 and derated above TA = 25°C
per Figure 2.
*Please see P6KE6.8A – P6KE200A for Unidirectional devices.

 Semiconductor Components Industries, LLC, 2001 51 Publication Order Number:

March, 2001 – Rev. 1 P6KE6.8CA/D
 P6KE6.8CA Series

ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted) IPP
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
IT
VC Clamping Voltage @ IPP VC VBR VRWM IR
V
IR V
VRWM Working Peak Reverse Voltage IT RWM VBR VC

IR Maximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT
IPP
IT Test Current
VBR Maximum Temperature Variation of VBR Bi–Directional TVS

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52
 P6KE6.8CA Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Breakdown Voltage VC @ IPP (Note 4.)
VRWM
(Note 2.) IR @ VRWM VBR (Note 3.) (Volts) @ IT VC IPP VBR
Device
Device Marking (Volts) (µA) Min Nom Max (mA) (Volts) (A) (%/°C)
P6KE6.8CA P6KE6.8CA 5.8 1000 6.45 6.80 7.14 10 10.5 57 0.057
P6KE7.5CA P6KE7.5CA 6.4 500 7.13 7.51 7.88 10 11.3 53 0.061
P6KE8.2CA P6KE8.2CA 7.02 200 7.79 8.2 8.61 10 12.1 50 0.065
P6KE9.1CA P6KE9.1CA 7.78 50 8.65 9.1 9.55 1 13.4 45 0.068
P6KE10CA P6KE10CA 8.55 10 9.5 10 10.5 1 14.5 41 0.073
P6KE11CA P6KE11CA 9.4 5 10.5 11.05 11.6 1 15.6 38 0.075
P6KE12CA P6KE12CA 10.2 5 11.4 12 12.6 1 16.7 36 0.078
P6KE13CA P6KE13CA 11.1 5 12.4 13.05 13.7 1 18.2 33 0.081
P6KE15CA P6KE15CA 12.8 5 14.3 15.05 15.8 1 21.2 28 0.084
P6KE16CA P6KE16CA 13.6 5 15.2 16 16.8 1 22.5 27 0.086
P6KE18CA P6KE18CA 15.3 5 17.1 18 18.9 1 25.2 24 0.088
P6KE20CA P6KE20CA 17.1 5 19 20 21 1 27.7 22 0.09
P6KE22CA P6KE22CA 18.8 5 20.9 22 23.1 1 30.6 20 0.092
P6KE24CA P6KE24CA 20.5 5 22.8 24 25.2 1 33.2 18 0.094
P6KE27CA P6KE27CA 23.1 5 25.7 27.05 28.4 1 37.5 16 0.096
P6KE30CA P6KE30CA 25.6 5 28.5 30 31.5 1 41.4 14.4 0.097
P6KE33CA P6KE33CA 28.2 5 31.4 33.05 34.7 1 45.7 13.2 0.098
P6KE36CA P6KE36CA 30.8 5 34.2 36 37.8 1 49.9 12 0.099
P6KE39CA P6KE39CA 33.3 5 37.1 39.05 41 1 53.9 11.2 0.1
P6KE43CA P6KE43CA 36.8 5 40.9 43.05 45.2 1 59.3 10.1 0.101
P6KE47CA P6KE47CA 40.2 5 44.7 47.05 49.4 1 64.8 9.3 0.101
P6KE51CA P6KE51CA 43.6 5 48.5 51.05 53.6 1 70.1 8.6 0.102
P6KE56CA P6KE56CA 47.8 5 53.2 56 58.8 1 77 7.8 0.103
P6KE62CA P6KE62CA 53 5 58.9 62 65.1 1 85 7.1 0.104
P6KE68CA P6KE68CA 58.1 5 64.6 68 71.4 1 92 6.5 0.104
P6KE75CA P6KE75CA 64.1 5 71.3 75.05 78.8 1 103 5.8 0.105
P6KE82CA P6KE82CA 70.1 5 77.9 82 86.1 1 113 5.3 0.105
P6KE91CA P6KE91CA 77.8 5 86.5 91 95.5 1 125 4.8 0.106
P6KE100CA P6KE100CA 85.5 5 95 100 105 1 137 4.4 0.106
P6KE110CA P6KE110CA 94 5 105 110.5 116 1 152 4 0.107
P6KE120CA P6KE120CA 102 5 114 120 126 1 165 3.6 0.107
P6KE130CA P6KE130CA 111 5 124 130.5 137 1 179 3.3 0.107
P6KE150CA P6KE150CA 128 5 143 150.5 158 1 207 2.9 0.108
P6KE160CA P6KE160CA 136 5 152 160 168 1 219 2.7 0.108
P6KE170CA P6KE170CA 145 5 162 170.5 179 1 234 2.6 0.108
P6KE180CA P6KE180CA 154 5 171 180 189 1 246 2.4 0.108
P6KE200CA P6KE200CA 171 5 190 200 210 1 274 2.2 0.108
2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
3. VBR measured at pulse test current IT at an ambient temperature of 25°C.
4. Surge current waveform per Figure 3 and derate per Figures 1 and 2.

http://onsemi.com
53
 P6KE6.8CA Series

100

PEAK POWER OR CURRENT @ TA= 25 C

NONREPETITIVE °

PEAK PULSE DERATING IN % OF

PULSE WAVEFORM
SHOWN IN FIGURE 3
PP K , PEAK POWER (kW)

10
100

80

60
1
40

20
0.1 0
0.1 s 1 s 10 s 100 s 1 s 10 s 0 25 50 75 100 125 150 175 200

tP, PULSE WIDTH TA, AMBIENT TEMPERATURE (°C)

Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve

PULSE WIDTH (tp) IS

tr ≤ 10 s DEFINED AS THAT
POINT WHERE THE
100 PEAK VALUE – IPP PEAK CURRENT
DECAYS TO 50% OF IPP.
VALUE (%)

IPP
HALF VALUE –
2
50

tP

0
0 1 2 3 4
t, TIME (ms)
Figure 3. Pulse Waveform
PD, STEADY STATE POWER DISSIPATION (WATTS)

1
0.7
3/8, 0.5
0.3
DERATING FACTOR

5 3/8, 0.2
PULSE WIDTH
10 ms
4 0.1
0.07
3
0.05
1 ms
2 0.03
0.02 100 s
1
10 s
0.01
0 0.1 0.2 0.5 1 2 5 10 20 50 100
0 25 50 75 100 125 150 175 200
D, DUTY CYCLE (%)
TL, LEAD TEMPERATURE (°C)
Figure 4. Steady State Power Derating Figure 5. Typical Derating Factor for Duty Cycle

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54
 P6KE6.8CA Series

APPLICATION NOTES

RESPONSE TIME minimum lead lengths and placing the suppressor device as
In most applications, the transient suppressor device is close as possible to the equipment or components to be
placed in parallel with the equipment or component to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitance operation.
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the DUTY CYCLE DERATING
transition from the operating voltage to the clamp voltage as The data of Figure 1 applies for non-repetitive conditions
shown in Figure 6. and at a lead temperature of 25°C. If the duty cycle increases,
The inductive effects in the device are due to actual the peak power must be reduced as indicated by the curves
turn-on time (time required for the device to go from zero of Figure 5. Average power must be derated as the lead or
current to full current) and lead inductance. This inductive ambient temperature rises above 25°C. The average power
effect produces an overshoot in the voltage across the derating curve normally given on data sheets may be
equipment or component being protected as shown in normalized and used for this purpose.
Figure 7. Minimizing this overshoot is very important in the At first glance the derating curves of Figure 5 appear to be
application, since the main purpose for adding a transient in error as the 10 ms pulse has a higher derating factor than
suppressor is to clamp voltage spikes. The P6KE6.8A series the 10 µs pulse. However, when the derating factor for a
has very good response time, typically < 1 ns and negligible given pulse of Figure 5 is multiplied by the peak power value
inductance. However, external inductive effects could of Figure 1 for the same pulse, the results follow the
produce unacceptable overshoot. Proper circuit layout, expected trend.

TYPICAL PROTECTION CIRCUIT

Zin

Vin LOAD VL

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 6. Figure 7.

http://onsemi.com
55
 P6KE6.8CA Series

UL RECOGNITION*

The entire series including the bidirectional CA suffix has Breakdown test, Endurance Conditioning, Temperature test,
Underwriters Laboratory Recognition for the classification Dielectric Voltage-Withstand test, Discharge test and
of protectors (QVGV2) under the UL standard for safety several more.
497B and File #E 116110. Many competitors only have one Whereas, some competitors have only passed a
or two devices recognized or have recognition in a flammability test for the package material, we have been
non-protective category. Some competitors have no recognized for much more to be included in their protector
recognition at all. With the UL497B recognition, our parts category.
successfully passed several tests including Strike Voltage *Applies to P6KE6.8A, CA – P6KE200A, CA.

http://onsemi.com
56
1N6267A Series

1500 Watt Mosorb Zener

Transient Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have http://onsemi.com
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in Cathode Anode
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.

Specification Features:
• Working Peak Reverse Voltage Range – 5.8 V to 214 V
• Peak Power – 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model AXIAL LEAD
CASE 41A
• Maximum Clamp Voltage @ Peak Pulse Current PLASTIC
• Low Leakage < 5 µA Above 10 V
• UL 497B for Isolated Loop Circuit Protection L
• Response Time is Typically < 1 ns
1N6
xxxA
1.5KE
Mechanical Characteristics: xxxA
YYWW
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are L = Assembly Location
readily solderable 1N6xxxA = JEDEC Device Code
1.5KExxxA = ON Device Code
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
YY = Year
230°C, 1/16″ from the case for 10 seconds WW = Work Week
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
ORDERING INFORMATION
MAXIMUM RATINGS
Device Package Shipping
Rating Symbol Value Unit
1.5KExxxA Axial Lead 500 Units/Box
Peak Power Dissipation (Note 1.) PPK 1500 Watts
@ TL ≤ 25°C 1.5KExxxARL4 Axial Lead 1500/Tape & Reel

Steady State Power Dissipation PD 5.0 Watts 1N6xxxA Axial Lead 500 Units/Box
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C 20 mW/°C 1N6xxxARL4 Axial Lead 1500/Tape & Reel

Thermal Resistance, Junction–to–Lead RJL 20 °C/W

Devices listed in bold, italic are ON Semiconductor
Forward Surge Current (Note 2.) IFSM 200 Amps
Preferred devices. Preferred devices are recommended
@ TA = 25°C choices for future use and best overall value.
Operating and Storage TJ, Tstg – 65 to °C
Temperature Range +175
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute maximum.
*Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices

 Semiconductor Components Industries, LLC, 2001 57 Publication Order Number:

March, 2001 – Rev. 3 1N6267A/D
 1N6267A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 3.5 V Max., IF (Note 3.) = 100 A)
IF
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage VC VBR VRWM
V
IR VF
IR Maximum Reverse Leakage Current @ VRWM IT
VBR Breakdown Voltage @ IT
IT Test Current
VBR Maximum Temperature Coefficient of VBR IPP
IF Forward Current
VF Forward Voltage @ IF Uni–Directional TVS

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58
 1N6267A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
Breakdown Voltage VC @ IPP (Note 7.)
VRWM
JEDEC
(Note 5.) IR @ VRWM VBR (Note 6.) (Volts) @ IT VC IPP VBR
Device
Device (Note 4.) (Volts) (µA) Min Nom Max (mA) (Volts) (A) (%/°C)
1.5KE6.8A 1N6267A 5.8 1000 6.45 6.8 7.14 10 10.5 143 0.057
1.5KE7.5A 1N6268A 6.4 500 7.13 7.5 7.88 10 11.3 132 0.061
1.5KE8.2A 1N6269A 7.02 200 7.79 8.2 8.61 10 12.1 124 0.065
1.5KE9.1A 1N6270A 7.78 50 8.65 9.1 9.55 1 13.4 112 0.068
1.5KE10A 1N6271A 8.55 10 9.5 10 10.5 1 14.5 103 0.073
1.5KE11A 1N6272A 9.4 5 10.5 11 11.6 1 15.6 96 0.075
1.5KE12A 1N6273A 10.2 5 11.4 12 12.6 1 16.7 90 0.078
1.5KE13A 1N6274A 11.1 5 12.4 13 13.7 1 18.2 82 0.081
1.5KE15A 1N6275A 12.8 5 14.3 15 15.8 1 21.2 71 0.084
1.5KE16A 1N6276A 13.6 5 15.2 16 16.8 1 22.5 67 0.086
1.5KE18A 1N6277A 15.3 5 17.1 18 18.9 1 25.2 59.5 0.088
1.5KE20A 1N6278A 17.1 5 19 20 21 1 27.7 54 0.09
1.5KE22A 1N6279A 18.8 5 20.9 22 23.1 1 30.6 49 0.092
1.5KE24A 1N6280A 20.5 5 22.8 24 25.2 1 33.2 45 0.094
1.5KE27A 1N6281A 23.1 5 25.7 27 28.4 1 37.5 40 0.096
1.5KE30A 1N6282A 25.6 5 28.5 30 31.5 1 41.4 36 0.097
1.5KE33A 1N6283A 28.2 5 31.4 33 34.7 1 45.7 33 0.098
1.5KE36A 1N6284A 30.8 5 34.2 36 37.8 1 49.9 30 0.099
1.5KE39A 1N6285A 33.3 5 37.1 39 41 1 53.9 28 0.1
1.5KE43A 1N6286A 36.8 5 40.9 43 45.2 1 59.3 25.3 0.101
1.5KE47A 1N6287A 40.2 5 44.7 47 49.4 1 64.8 23.2 0.101
1.5KE51A 1N6288A 43.6 5 48.5 51 53.6 1 70.1 21.4 0.102
1.5KE56A 1N6289 47.8 5 53.2 56 58.8 1 77 19.5 0.103
1.5KE62A 1N6290A 53 5 58.9 62 65.1 1 85 17.7 0.104
1.5KE68A 1N6291A 58.1 5 64.6 68 71.4 1 92 16.3 0.104
1.5KE75A 1N6292A 64.1 5 71.3 75 78.8 1 103 14.6 0.105
1.5KE82A 1N6293A 70.1 5 77.9 82 86.1 1 113 13.3 0.105
1.5KE91A 1N6294A 77.8 5 86.5 91 95.5 1 125 12 0.106
1.5KE100A 1N6295A 85.5 5 95 100 105 1 137 11 0.106
1.5KE110A 1N6296A 94 5 105 110 116 1 152 9.9 0.107
1.5KE120A 1N6297A 102 5 114 120 126 1 165 9.1 0.107
1.5KE130A 1N6298A 111 5 124 130 137 1 179 8.4 0.107
1.5KE150A 1N6299A 128 5 143 150 158 1 207 7.2 0.108
1.5KE160A 1N6300A 136 5 152 160 168 1 219 6.8 0.108
1.5KE170A 1N6301A 145 5 162 170 179 1 234 6.4 0.108
1.5KE180A 1N6302A 154 5 171 180 189 1 246 6.1 0.108
1.5KE200A 1N6303A 171 5 190 200 210 1 274 5.5 0.108
1.5KE220A 185 5 209 220 231 1 328 4.6 0.109
1.5KE250A 214 5 237 250 263 1 344 5 0.109
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.

http://onsemi.com
59
 1N6267A Series

100
NONREPETITIVE

PEAK POWER OR CURRENT @ TA = 25°C

PULSE WAVEFORM

PEAK PULSE DERATING IN % OF

SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)

100

10 80

60

40

20
1 0
0.1µs 1µs 10µs 100µs 1 ms 10 ms 0 25 50 75 100 125 150 175 200
tP, PULSE WIDTH TA, AMBIENT TEMPERATURE (°C)

Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve

1N6373, ICTE-5, MPTE-5, 1N6267A/1.5KE6.8A

through through
1N6389, ICTE-45, C, MPTE-45, C 1N6303A/1.5KE200A
10,000 10,000
MEASURED @
ZERO BIAS MEASURED @
ZERO BIAS

1000 1000
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

MEASURED @ VRWM

MEASURED @ VRWM
100 100

10 10
1 10 100 1000 1 10 100 1000
VBR, BREAKDOWN VOLTAGE (VOLTS) VBR, BREAKDOWN VOLTAGE (VOLTS)

Figure 3. Capacitance versus Breakdown Voltage

PD , STEADY STATE POWER DISSIPATION (WATTS)

PULSE WIDTH (tP) IS DEFINED AS

tr THAT POINT WHERE THE PEAK
3/8″ CURRENT DECAYS TO 50% OF IPP.
PEAK VALUE - IPP tr ≤ 10µs
100
5 3/8″
IPP, VALUE (%)

4 IPP
HALF VALUE -
3 2
50
2
tP
1

0 0
0 25 50 75 100 125 150 175 200 0 1 2 3 4
TL, LEAD TEMPERATURE (°C) t, TIME (ms)

Figure 4. Steady State Power Derating Figure 5. Pulse Waveform

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60
 1N6267A Series

1N6373, ICTE-5, MPTE-5, 1.5KE6.8CA

through through
1N6389, ICTE-45, C, MPTE-45, C 1.5KE200CA
1000 VBR(NOM)=6.8 to 13V 1000 VBR(NOM)=6.8 to 13V
TL=25°C TL=25°C
500 tP=10µs 20V 500 tP=10µs 20V
43V 24V 43V
24V
200 200
IT , TEST CURRENT (AMPS)

IT , TEST CURRENT (AMPS)

75V
100 100
50 50

20 20 180V
10 10 120V
5 5

2 2
1 1
0.3 0.5 0.7 1 2 3 5 7 10 20 30 0.3 0.5 0.7 1 2 3 5 7 10 20 30
∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) ∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)

Figure 6. Dynamic Impedance

1
0.7
0.5
0.3
0.2
DERATING FACTOR

PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02 100 µs
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle

APPLICATION NOTES

RESPONSE TIME application, since the main purpose for adding a transient
In most applications, the transient suppressor device is suppressor is to clamp voltage spikes. These devices have
placed in parallel with the equipment or component to be excellent response time, typically in the picosecond range
protected. In this situation, there is a time delay associated and negligible inductance. However, external inductive
with the capacitance of the device and an overshoot effects could produce unacceptable overshoot. Proper
condition associated with the inductance of the device and circuit layout, minimum lead lengths and placing the
the inductance of the connection method. The capacitance suppressor device as close as possible to the equipment or
effect is of minor importance in the parallel protection components to be protected will minimize this overshoot.
scheme because it only produces a time delay in the Some input impedance represented by Zin is essential to
transition from the operating voltage to the clamp voltage as prevent overstress of the protection device. This impedance
shown in Figure 8. should be as high as possible, without restricting the circuit
The inductive effects in the device are due to actual operation.
turn-on time (time required for the device to go from zero DUTY CYCLE DERATING
current to full current) and lead inductance. This inductive The data of Figure 1 applies for non-repetitive conditions
effect produces an overshoot in the voltage across the and at a lead temperature of 25°C. If the duty cycle increases,
equipment or component being protected as shown in the peak power must be reduced as indicated by the curves
Figure 9. Minimizing this overshoot is very important in the of Figure 7. Average power must be derated as the lead or

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61
 1N6267A Series

ambient temperature rises above 25°C. The average power the 10 µs pulse. However, when the derating factor for a
derating curve normally given on data sheets may be given pulse of Figure 7 is multiplied by the peak power value
normalized and used for this purpose. of Figure 1 for the same pulse, the results follow the
At first glance the derating curves of Figure 7 appear to be expected trend.
in error as the 10 ms pulse has a higher derating factor than

TYPICAL PROTECTION CIRCUIT

Zin

Vin LOAD VL

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 8. Figure 9.

UL RECOGNITION*
The entire series has Underwriters Laboratory Conditioning, Temperature test, Dielectric Voltage-
Recognition for the classification of protectors (QVGV2) Withstand test, Discharge test and several more.
under the UL standard for safety 497B and File #116110. Whereas, some competitors have only passed a
Many competitors only have one or two devices recognized flammability test for the package material, we have been
or have recognition in a non-protective category. Some recognized for much more to be included in their Protector
competitors have no recognition at all. With the UL497B category.
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance *Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA

CLIPPER BIDIRECTIONAL DEVICES

1. Clipper-bidirectional devices are available in the 3. The 1N6267A through 1N6303A series are JEDEC
1.5KEXXA series and are designated with a “CA” registered devices and the registration does not include
suffix; for example, 1.5KE18CA. Contact your nearest a “CA” suffix. To order clipper-bidirectional devices
ON Semiconductor representative. one must add CA to the 1.5KE device title.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceeding table
(except for VF which does not apply).

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62
SA5.0A Series
500 Watt Peak Power
MiniMOSORB Zener Transient
Voltage Suppressors
Unidirectional*
The SA5.0A series is designed to protect voltage sensitive
http://onsemi.com
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SA5.0A series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable Cathode Anode
Surmetic axial leaded package and is ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications.
Specification Features:
• Working Peak Reverse Voltage Range – 5 to 170 V
• Peak Power – 500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 1 µA above 8.5 V
• UL 497B for Isolated Loop Circuit Protection
• Maximum Temperature Coefficient Specified
• Response Time is typically < 1 ns AXIAL LEAD
CASE 59
Mechanical Characteristics: PLASTIC
CASE: Void-free, Transfer-molded, Thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
L
readily solderable SA
xxxA
MAXIMUM LEAD TEMPERATURE FOR SOLDERING: 230C, YYWW
1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band. L = Assembly Location
MOUNTING POSITION: Any SAxxxA = ON Device Code
YY = Year
WW = Work Week
MAXIMUM RATINGS
Rating Symbol Value Unit
ORDERING INFORMATION
Peak Power Dissipation (Note 1.) PPK 500 Watts
@ TL ≤ 25°C Device Package Shipping
Steady State Power Dissipation PD 3.0 Watts
SAxxxA Axial Lead 1000 Units/Box
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C 30 mW/°C SAxxxARL Axial Lead 5000/Tape & Reel
Thermal Resistance, Junction–to–Lead RJL 33.3 °C/W
Forward Surge Current (Note 2.) IFSM 70 Amps
Devices listed in bold, italic are ON Semiconductor
@ TA = 25°C
Preferred devices. Preferred devices are recommended
Operating and Storage Temperature TJ, Tstg – 55 to °C choices for future use and best overall value.
Range +175
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute
*Please see SA5.0CA – SA170CA for Bidirectional devices.

 Semiconductor Components Industries, LLC, 2001 63 Publication Order Number:

March, 2001 – Rev. 5 SA5.0A/D
 SA5.0A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 3.5 V Max. @ IF (Note 6.) = 35 A)
IF
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage VC VBR VRWM
V
IR VF
IR Maximum Reverse Leakage Current @ VRWM IT
VBR Breakdown Voltage @ IT
IT Test Current
VBR Maximum Temperature Variation of VBR IPP
IF Forward Current
VF Forward Voltage @ IF Uni–Directional TVS

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 SA5.0A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 6.) = 35 A)
Breakdown Voltage VC @ IPP (Note 5.)
VRWM
(Note 3.) IR @ VRWM VBR (Note 4.) (Volts) @ IT VC IPP VBR
Device
Device Marking Volts µA Min Nom Max mA Volts A mV/°C
SA5.0A SA5.0A 5 600 6.4 6.7 7 10 9.2 54.3 5
SA6.0A SA6.0A 6 600 6.67 7.02 7.37 10 10.3 48.5 5
SA7.0A SA7.0A 7 150 7.78 8.19 8.6 10 12 41.7 6
SA7.5A SA7.5A 7.5 50 8.33 8.77 9.21 1 12.9 38.8 7
SA8.0A SA8.0A 8 25 8.89 9.36 9.83 1 13.6 36.7 7
SA8.5A SA8.5A 8.5 5 9.44 9.92 10.4 1 14.4 34.7 8
SA9.0A SA9.0A 9 1 10 10.55 11.1 1 15.4 32.5 9
SA10A SA10A 10 1 11.1 11.7 12.3 1 17 29.4 10
SA11A SA11A 11 1 12.2 12.85 13.5 1 18.2 27.4 11
SA12A SA12A 12 1 13.3 14 14.7 1 19.9 25.1 12
SA13A SA13A 13 1 14.4 15.15 15.9 1 21.5 23.2 13
SA14A SA14A 14 1 15.6 16.4 17.2 1 23.2 21.5 14
SA15A SA15A 15 1 16.7 17.6 18.5 1 24.4 20.6 16
SA16A SA16A 16 1 17.8 18.75 19.7 1 26 19.2 17
SA17A SA17A 17 1 18.9 19.9 20.9 1 27.6 18.1 19
SA18A SA18A 18 1 20 21.05 22.1 1 29.2 17.2 20
SA20A SA20A 20 1 22.2 23.35 24.5 1 32.4 15.4 23
SA22A SA22A 22 1 24.4 25.65 26.9 1 35.5 14.1 25
SA24A SA24A 24 1 26.7 28.1 29.5 1 38.9 12.8 28
SA26A SA26A 26 1 28.9 30.4 31.9 1 42.1 11.9 30
SA28A SA28A 28 1 31.1 32.75 34.4 1 45.4 11 31
SA30A SA30A 30 1 33.3 35.05 36.8 1 48.4 10.3 36
SA33A SA33A 33 1 36.7 38.65 40.6 1 53.3 9.4 39
SA36A SA36A 36 1 40 42.1 44.2 1 58.1 8.6 41
SA40A SA40A 40 1 44.4 46.55 49.1 1 64.5 7.8 46
SA43A SA43A 43 1 47.8 50.3 52.8 1 69.4 7.2 50
SA45A SA45A 45 1 50 52.65 55.3 1 72.7 6.9 52
SA48A SA48A 48 1 53.3 56.1 58.9 1 77.4 6.5 56
SA51A SA51A 51 1 56.7 59.7 62.7 1 82.4 6.1 61
SA58A SA58A 58 1 64.4 67.8 71.2 1 93.6 5.3 70
SA60A SA60A 60 1 66.7 70.2 73.7 1 96.8 5.2 71
SA64A SA64A 64 1 71.1 74.85 78.6 1 103 4.9 76
SA70A SA70A 70 1 77.8 81.9 86 1 113 4.4 85
SA78A SA78A 78 1 86.7 91.25 95.8 1 126 4.0 95
SA90A SA90A 90 1 100 105.5 111 1 146 3.4 110
SA100A SA100A 100 1 111 117 123 1 162 3.1 123
SA110A SA110A 110 1 122 128.5 135 1 177 2.8 133
SA120A SA120A 120 1 133 140 147 1 193 2.5 146
SA130A SA130A 130 1 144 151.5 159 1 209 2.4 158
SA150A SA150A 150 1 167 176 185 1 243 2.1 184
SA160A SA160A 160 1 178 187.5 197 1 259 1.9 196
SA170A SA170A 170 1 189 199 209 1 275 1.8 208
NOTES:
3. MiniMOSORB transients suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which
should be equal to or greater than the dc or continuous peak operating voltage level.
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 4 and derate per Figures 1 and 2.
6. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute

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65
 SA5.0A Series

100

PEAK POWER OR CURRENT @ TA = 25 C

NONREPETITIVE PULSE 

PEAK PULSE DERATING IN % OF

WAVEFORM SHOWN IN
PPK , PEAK POWER (kW)

FIGURE 4
100
10
80

60
1
40

20

0.1 0
0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms 0 25 50 75 100 125 150 175 200
tp, PULSE WIDTH TA, AMBIENT TEMPERATURE (C)

Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve

PULSE WIDTH (tp) IS

tr ≤ 10 µs DEFINED AS THAT POINT
WHERE THE PEAK
10,000 CURRENT DECAYS TO
100 PEAK VALUE – IPP 50% OF IPP.
C, CAPACITANCE (pF)

VALUE (%)
MEASURED @
ZERO BIAS
1000 IPP
HALF VALUE –
2
50
100 MEASURED @
(VRWM) tP

10 0
0.1 1 10 100 1000 0 1 2 3 4
VBR, BREAKDOWN VOLTAGE (VOLTS) t, TIME (ms)
Figure 3. Capacitance versus Breakdown Voltage Figure 4. Pulse Waveform
PD, STEADY STATE POWER DISSIPATION (WATTS)

4
3/8″

3/8″
3

0
0 25 50 75 100 125 150 175 200
TL, LEAD TEMPERATURE (C)

Figure 5. Steady State Power Derating

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66
 SA5.0A Series

UL RECOGNITION*

The entire series including the bidirectional CA suffix has Breakdown test, Endurance Conditioning, Temperature test,
Underwriters Laboratory Recognition for the classification Dielectric Voltage-Withstand test, Discharge test and
of protectors (QVGV2) under the UL standard for safety several more.
497B and File #E 116110. Many competitors only have one Whereas, some competitors have only passed a
or two devices recognized or have recognition in a flammability test for the package material, we have been
non-protective category. Some competitors have no recognized for much more to be included in their protector
recognition at all. With the UL497B recognition, our parts category.
successfully passed several tests including Strike Voltage *Applies to SA5.0A, CA – SA170A, CA.

http://onsemi.com
67
SA5.0CA Series

500 Watt Peak Power

MiniMOSORB Zener Transient
Voltage Suppressors
Bidirectional*
The SA5.0CA series is designed to protect voltage sensitive http://onsemi.com
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SA5.0CA series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and is ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications.
Specification Features:
• Working Peak Reverse Voltage Range – 5.0 to 170 V
• Peak Power – 500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 1 µA above 8.5 V
• UL 497B for Isolated Loop Circuit Protection
• Maximum Temperature Coefficient Specified
AXIAL LEAD
• Response Time is typically < 1 ns CASE 59
PLASTIC
Mechanical Characteristics:
CASE: Void-free, Transfer-molded, Thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable L
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: SA
xxxCA
230°C, 1/16″ from the case for 10 seconds YYWW
POLARITY: Cathode band does not imply polarity
MOUNTING POSITION: Any L = Assembly Location
SAxxxCA = ON Device Code
YY = Year
MAXIMUM RATINGS WW = Work Week
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) PPK 500 Watts
@ TL ≤ 25°C ORDERING INFORMATION

Steady State Power Dissipation @ PD 3.0 Watts Device Package Shipping

TL ≤ 75°C, Lead Length = 3/8″
SAxxxCA Axial Lead 1000 Units/Box
Derated above TL = 75°C 30 mW/°C
Thermal Resistance, RJL 33.3 °C/W SAxxxCARL Axial Lead 5000/Tape & Reel
Junction–to–Lead
Operating and Storage Temperature TJ, Tstg – 55 to +175 °C
Devices listed in bold, italic are ON Semiconductor
Range Preferred devices. Preferred devices are recommended
1. Nonrepetitive current pulse per Figure 3 and derated above TA = 25°C choices for future use and best overall value.
per Figure 2.
*Please see SA5.0A to SA170A for Unidirectional devices.

 Semiconductor Components Industries, LLC, 2001 68 Publication Order Number:

March, 2001 – Rev. 1 SA5.0CA/D
 SA5.0CA Series

ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted) IPP
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
IT
VC Clamping Voltage @ IPP VC VBR VRWM IR
V
IR V
VRWM Working Peak Reverse Voltage IT RWM VBR VC

IR Maximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT
IPP
IT Test Current
VBR Maximum Temperature Variation of VBR Bi–Directional TVS

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Breakdown Voltage VC @ IPP (Note 4.)
VRWM
(Note 2.) IR @ VRWM VBR (Note 3.) (Volts) @ IT VC IPP VBR
Device
Device Marking (Volts) (µA) Min Nom Max (mA) (Volts) (A) (mV/°C)
SA5.0CA SA5.0CA 5 600 6.4 6.7 7 10 9.2 54.3 5
SA6.0CA SA6.0CA 6 600 6.67 7.02 7.37 10 10.3 48.5 5
SA6.5CA SA6.5CA 6.5 400 7.22 7.60 7.98 10 11.2 44.7 5
SA7.0CA SA7.0CA 7 150 7.78 8.19 8.6 10 12 41.7 6
SA7.5CA SA7.5CA 7.5 50 8.33 8.77 9.21 1 12.9 38.8 7
SA8.0CA SA8.0CA 8 25 8.89 9.36 9.83 1 13.6 36.7 7
SA8.5CA SA8.5CA 8.5 5 9.44 9.92 10.4 1 14.4 34.7 8
SA9.0CA SA9.0CA 9 1 10 10.55 11.1 1 15.4 32.5 9
SA10CA SA10CA 10 1 11.1 11.7 12.3 1 17 29.4 10
SA11CA SA11CA 11 1 12.2 12.85 13.5 1 18.2 27.4 11
SA12CA SA12CA 12 1 13.3 14 14.7 1 19.9 25.1 12
SA13CA SA13CA 13 1 14.4 15.15 15.9 1 21.5 23.2 13
SA14CA SA14CA 14 1 15.6 16.4 17.2 1 23.2 21.5 14
SA15CA SA15CA 15 1 16.7 17.6 18.5 1 24.4 20.6 16
SA16CA SA16CA 16 1 17.8 18.75 19.7 1 26 19.2 17
SA17CA SA17CA 17 1 18.9 19.9 20.9 1 27.6 18.1 19
SA18CA SA18CA 18 1 20 21.05 22.1 1 29.2 17.2 20
SA20CA SA20CA 20 1 22.2 23.35 24.5 1 32.4 15.4 23
SA22CA SA22CA 22 1 24.4 25.65 26.9 1 35.5 14.1 25
SA24CA SA24CA 24 1 26.7 28.1 29.5 1 38.9 12.8 28
SA26CA SA26CA 26 1 28.9 30.4 31.9 1 42.1 11.9 30
SA28CA SA28CA 28 1 31.1 32.75 34.4 1 454 11 31
SA30CA SA30CA 30 1 33.3 35.05 36.8 1 48.4 10.3 36
SA33CA SA33CA 33 1 36.7 38.65 40.6 1 53.3 9.4 39
SA36CA SA36CA 36 1 40 42.1 44.2 1 58.1 8.6 41
SA40CA SA40CA 40 1 44.4 46.55 49.1 1 64.5 7.8 46
SA43CA SA43CA 43 1 47.8 50.3 52.8 1 69.4 7.2 50
SA45CA SA45CA 45 1 50 52.65 55.3 1 72.7 6.9 52
SA48CA SA48CA 48 1 53.3 56.1 58.9 1 77.4 6.5 56
SA51CA SA51CA 51 1 56.7 59.7 62.7 1 82.4 6.1 61
SA58CA SA58CA 58 1 64.4 67.8 71.2 1 93.6 5.3 70
SA60CA SA60CA 60 1 66.7 70.2 73.7 1 96.8 5.2 71
NOTES:
2. MiniMOSORB transient suppressors are normally selected according to the maximum working peak reverse voltage (VRWM), which should
be equal to or greater than the dc or continuous peak operating voltage level.
3. VBR measured at pulse test current IT at an ambient temperature of 25°C.
4. Surge current waveform per Figure 3 and derate per Figures 1 and 2.

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 SA5.0CA Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Breakdown Voltage VC @ IPP (Note 7.)
VRWM
(Note 5.) IR @ VRWM VBR (Note 6.) (Volts) @ IT VC IPP VBR
Device
Device Marking (Volts) (µA) Min Nom Max (mA) (Volts) (A) (mV/°C)
SA64CA SA64CA 64 1 71.1 74.85 78.6 1 103 4.9 76
SA70CA SA70CA 70 1 77.8 81.9 86 1 113 4.4 85
SA78CA SA78CA 78 1 86.7 91.25 95.8 1 126 4.0 95
SA85CA SA85CA 85 1 94.4 99.2 104 1 137 3.6 103
SA90CA SA90CA 90 1 100 105.5 111 1 146 3.4 110
SA100CA SA100CA 100 1 111 117 123 1 162 3.1 123
SA110CA SA110CA 110 1 122 128.5 135 1 177 2.8 133
SA120CA SA120CA 120 1 133 140 147 1 193 2.5 146
SA130CA SA130CA 130 1 144 151.5 159 1 209 2.4 158
SA150CA SA150CA 150 1 167 176 185 1 243 2.1 184
SA160CA SA160CA 160 1 178 187.5 197 1 259 1.9 196
SA170CA SA170CA 170 1 189 199 209 1 275 1.8 208
NOTES:
5. MiniMOSORB transient suppressors are normally selected according to the maximum working peak reverse voltage (VRWM), which should
be equal to or greater than the dc or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C.
7. Surge current waveform per Figure 3 and derate per Figures 1 and 2.

100
PEAK POWER OR CURRENT @ TA = 25 C

NONREPETITIVE PULSE °
PEAK PULSE DERATING IN % OF

WAVEFORM SHOWN IN
PP K , PEAK POWER (kW)

FIGURE 3
100
10
80

60
1
40

20

0.1 0
0.1 ms 1 ms 10 ms 100 ms 1 ms 10 ms 0 25 50 75 100 125 150 175 200
tp, PULSE WIDTH TA, AMBIENT TEMPERATURE (°C)

Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve

PD, STEADY STATE POWER DISSIPATION (WATTS)

5
PULSE WIDTH (tp) IS DEFINED
tr ≤ 10µs AS THAT POINT WHERE THE 4
PEAK CURRENT DECAYS TO 50% 3/8″
OF IPP.
100 PEAK VALUE - IPP 3/8″
3
VALUE (%)

IPP
HALF VALUE -
2 2
50

1
tP

0 0
0 1 2 3 4 0 25 50 75 100 125 150 175 200
t, TIME (ms) TL, LEAD TEMPERATURE (°C)

Figure 3. Pulse Waveform Figure 4. Steady State Power Derating

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70
 SA5.0CA Series

UL RECOGNITION*

The entire series including the bidirectional CA suffix has Breakdown test, Endurance Conditioning, Temperature test,
Underwriters Laboratory Recognition for the classification Dielectric Voltage-Withstand test, Discharge test and
of protectors (QVGV2) under the UL standard for safety several more.
497B and File #E 116110. Many competitors only have one Whereas, some competitors have only passed a
or two devices recognized or have recognition in a flammability test for the package material, we have been
non-protective category. Some competitors have no recognized for much more to be included in their protector
recognition at all. With the UL497B recognition, our parts category.
successfully passed several tests including Strike Voltage *Applies to SA5.0A, CA – SA170A, CA.

http://onsemi.com
71
1.5KE6.8CA Series

1500 Watt Mosorb Zener

Transient Voltage Suppressors
Bidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have http://onsemi.com
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/ consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.

Specification Features:
• Working Peak Reverse Voltage Range – 5.8 V to 214 V
• Peak Power – 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current AXIAL LEAD
• Low Leakage < 5 µA above 10 V
CASE 41A
PLASTIC
• UL 497B for Isolated Loop Circuit Protection
• Response Time is typically < 1 ns

Mechanical Characteristics: L
1N6
CASE: Void-free, transfer-molded, thermosetting plastic xxxCA
1.5KE
FINISH: All external surfaces are corrosion resistant and leads are xxxCA
YYWW
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
L = Assembly Location
230°C, 1/16″ from the case for 10 seconds 1N6xxxCA = JEDEC Device Code
POLARITY: Cathode band does not imply polarity 1.5KExxxCA = ON Device Code
MOUNTING POSITION: Any YY = Year
WW = Work Week
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) PPK 1500 Watts ORDERING INFORMATION
@ TL ≤ 25°C
Device Packaging Shipping
Steady State Power Dissipation PD 5.0 Watts
@ TL ≤ 75°C, Lead Length = 3/8″ 1.5KExxCA Axial Lead 500 Units/Box
Derated above TL = 75°C 20 mW/°C
1.5KExxCARL4 Axial Lead 1500/Tape & Reel
Thermal Resistance, Junction–to–Lead RJL 20 °C/W
Operating and Storage TJ, Tstg – 65 to °C
Temperature Range +175
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per
Figure 2.
*Please see 1N6267A to 1N6306A (1.5KE6.8A – 1.5KE250A)
for Unidirectional Devices

 Semiconductor Components Industries, LLC, 2001 72 Publication Order Number:

March, 2001 – Rev. 0 1.5KE6.8CA/D
 1.5KE6.8CA Series

ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted) IPP
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
IT
VC Clamping Voltage @ IPP VC VBR VRWM IR
V
IR V
VRWM Working Peak Reverse Voltage IT RWM VBR VC

IR Maximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT
IPP
IT Test Current
VBR Maximum Temperature Coefficient of VBR Bi–Directional TVS

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73
 1.5KE6.8CA Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Breakdown Voltage VC @ IPP (Note 4.)
VRWM
(Note 2.) IR @ VRWM VBR (Note 3.) (Volts) @ IT VC IPP VBR
Device (Volts) (µA) Min Nom Max (mA) (Volts) (A) (%/°C)
1.5KE6.8CA 5.8 1000 6.45 6.8 7.14 10 10.5 143 0.057
1.5KE7.5CA 6.4 500 7.13 7.5 7.88 10 11.3 132 0.061
1.5KE8.2CA 7.02 200 7.79 8.2 8.61 10 12.1 124 0.065
1.5KE9.1CA 7.78 50 8.65 9.1 9.55 1 13.4 112 0.068
1.5KE10CA 8.55 10 9.5 10 10.5 1 14.5 103 0.073
1.5KE11CA 9.4 5 10.5 11 11.6 1 15.6 96 0.075
1.5KE12CA 10.2 5 11.4 12 12.6 1 16.7 90 0.078
1.5KE13CA 11.1 5 12.4 13 13.7 1 18.2 82 0.081
1.5KE15CA 12.8 5 14.3 15 15.8 1 21.2 71 0.084
1.5KE16CA 13.6 5 15.2 16 16.8 1 22.5 67 0.086
1.5KE18CA 15.3 5 17.1 18 18.9 1 25.2 59.5 0.088
1.5KE20CA 17.1 5 19 20 21 1 27.7 54 0.09
1.5KE22CA 18.8 5 20.9 22 23.1 1 30.6 49 0.092
1.5KE24CA 20.5 5 22.8 24 25.2 1 33.2 45 0.094
1.5KE27CA 23.1 5 25.7 27 28.4 1 37.5 40 0.096
1.5KE30CA 25.6 5 28.5 30 31.5 1 41.4 36 0.097
1.5KE33CA 28.2 5 31.4 33 34.7 1 45.7 33 0.098
1.5KE36CA 30.8 5 34.2 36 37.8 1 49.9 30 0.099
1.5KE39CA 33.3 5 37.1 39 41 1 53.9 28 0.1
1.5KE43CA 36.8 5 40.9 43 45.2 1 59.3 25.3 0.101
1.5KE47CA 40.2 5 44.7 47 49.4 1 64.8 23.2 0.101
1.5KE51CA 43.6 5 48.5 51 53.6 1 70.1 21.4 0.102
1.5KE56CA 47.8 5 53.2 56 58.8 1 77 19.5 0.103
1.5KE62CA 53 5 58.9 62 65.1 1 85 17.7 0.104
1.5KE68CA 58.1 5 64.6 68 71.4 1 92 16.3 0.104
1.5KE75CA 64.1 5 71.3 75 78.8 1 103 14.6 0.105
1.5KE82CA 70.1 5 77.9 82 86.1 1 113 13.3 0.105
1.5KE91CA 77.8 5 86.5 91 95.5 1 125 12 0.106
1.5KE100CA 85.5 5 95 100 105 1 137 11 0.106
1.5KE110CA 94 5 105 110 116 1 152 9.9 0.107
1.5KE120CA 102 5 114 120 126 1 165 9.1 0.107
1.5KE130CA 111 5 124 130 137 1 179 8.4 0.107
1.5KE150CA 128 5 143 150 158 1 207 7.2 0.108
1.5KE160CA 136 5 152 160 168 1 219 6.8 0.108
1.5KE170CA 145 5 162 170 179 1 234 6.4 0.108
1.5KE180CA 154 5 171 180 189 1 246 6.1 0.108
1.5KE200CA 171 5 190 200 210 1 274 5.5 0.108
1.5KE220CA 185 5 209 220 231 1 328 4.6 0.109
1.5KE250CA 214 5 237 250 263 1 344 5 0.109
2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
3. VBR measured at pulse test current IT at an ambient temperature of 25°C.
4. Surge current waveform per Figure 4 and derate per Figures 1 and 2.

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74
 1.5KE6.8CA Series

100

PEAK POWER OR CURRENT @ TA = 25 C

NONREPETITIVE 
PULSE WAVEFORM

PEAK PULSE DERATING IN % OF

PPK , PEAK POWER (kW)

SHOWN IN FIGURE 4

100

10 80

60

40

20
1 0
0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms 0 25 50 75 100 125 150 175 200
tP, PULSE WIDTH TA, AMBIENT TEMPERATURE (C)

Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve

PD, STEADY STATE POWER DISSIPATION (WATTS)

PULSE WIDTH (tP) IS

tr ≤ 10 µs DEFINED AS THAT
3/8″ POINT WHERE THE
PEAK VALUE – IPP PEAK CURRENT
100
5 3/8″ DECAYS TO 50% OF IPP.
IPP, VALUE (%)

4 IPP
HALF VALUE –
3 2
50
2
tP
1

0 0
0 25 50 75 100 125 150 175 200 0 1 2 3 4
TL, LEAD TEMPERATURE (C) t, TIME (ms)

Figure 3. Steady State Power Derating Figure 4. Pulse Waveform

1N6373, ICTE-5, MPTE-5, 1.5KE6.8CA

through through
1N6389, ICTE-45, C, MPTE-45, C 1.5KE200CA
1000 VBR(NOM) = 6.8 to 13 V 1000
TL = 25C TL = 25C VBR(NOM) = 6.8 to 13 V
500 tP = 10 µs 20 V 500 tP = 10 µs 20 V
43 V 43 V
24 V 24 V
IT, TEST CURRENT (AMPS)
IT, TEST CURRENT (AMPS)

200 200 75 V
100 100
50 50

20 20 180 V
10 10 120 V
5 5

2 2
1 1
0.3 0.5 0.7 1 2 3 5 7 10 20 30 0.3 0.5 0.7 1 2 3 5 7 10 20 30
∆VBR, INSTANTANEOUS INCREASE IN VBR ∆VBR, INSTANTANEOUS INCREASE IN VBR
ABOVE VBR(NOM) (VOLTS) ABOVE VBR(NOM) (VOLTS)
Figure 5. Dynamic Impedance

http://onsemi.com
75
 1.5KE6.8CA Series

1
0.7
0.5
0.3

DERATING FACTOR
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02 100 µs
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)
Figure 6. Typical Derating Factor for Duty Cycle

APPLICATION NOTES
RESPONSE TIME circuit layout, minimum lead lengths and placing the
In most applications, the transient suppressor device is suppressor device as close as possible to the equipment or
placed in parallel with the equipment or component to be components to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitance operation.
effect is of minor importance in the parallel protection DUTY CYCLE DERATING
scheme because it only produces a time delay in the The data of Figure 1 applies for non-repetitive conditions
transition from the operating voltage to the clamp voltage as and at a lead temperature of 25°C. If the duty cycle increases,
shown in Figure 7. the peak power must be reduced as indicated by the curves
The inductive effects in the device are due to actual of Figure 6. Average power must be derated as the lead or
turn-on time (time required for the device to go from zero ambient temperature rises above 25°C. The average power
current to full current) and lead inductance. This inductive derating curve normally given on data sheets may be
effect produces an overshoot in the voltage across the normalized and used for this purpose.
equipment or component being protected as shown in At first glance the derating curves of Figure 6 appear to be
Figure 8. Minimizing this overshoot is very important in the in error as the 10 ms pulse has a higher derating factor than
application, since the main purpose for adding a transient the 10 µs pulse. However, when the derating factor for a
suppressor is to clamp voltage spikes. These devices have given pulse of Figure 6 is multiplied by the peak power value
excellent response time, typically in the picosecond range of Figure 1 for the same pulse, the results follow the
and negligible inductance. However, external inductive expected trend.
effects could produce unacceptable overshoot. Proper

http://onsemi.com
76
 1.5KE6.8CA Series

TYPICAL PROTECTION CIRCUIT

Zin

Vin LOAD VL

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 7. Figure 8.

UL RECOGNITION*
The entire series has Underwriters Laboratory Conditioning, Temperature test, Dielectric Voltage-
Recognition for the classification of protectors (QVGV2) Withstand test, Discharge test and several more.
under the UL standard for safety 497B and File #116110. Whereas, some competitors have only passed a
Many competitors only have one or two devices recognized flammability test for the package material, we have been
or have recognition in a non-protective category. Some recognized for much more to be included in their Protector
competitors have no recognition at all. With the UL497B category.
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance *Applies to 1.5KE6.8CA – 1.5KE250CA

CLIPPER BIDIRECTIONAL DEVICES

1. Clipper-bidirectional devices are available in the 3. The 1N6267A through 1N6303A series are JEDEC
1.5KEXXA series and are designated with a “CA” registered devices and the registration does not include
suffix; for example, 1.5KE18CA. Contact your nearest a “CA” suffix. To order clipper-bidirectional devices
ON Semiconductor representative. one must add CA to the 1.5KE device title.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceeding table
(except for VF which does not apply).

http://onsemi.com
77



 

  
  

  
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have http://onsemi.com
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in Cathode Anode
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.

Specification Features:
• Working Peak Reverse Voltage Range – 5 V
• Peak Power – 1500 Watts @ 1 ms
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V AXIAL LEAD
CASE 41A
• Response Time is Typically < 1 ns PLASTIC

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are L
readily solderable 1N
5908
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: YYWW
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band L = Assembly Location
MOUNTING POSITION: Any 1N5908 = JEDEC Device Code
YY = Year
MAXIMUM RATINGS WW = Work Week
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) PPK 1500 Watts
@ TL ≤ 25°C ORDERING INFORMATION
Steady State Power Dissipation PD 5.0 Watts Device Package Shipping
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C 50 mW/°C 1N5908 Axial Lead 500 Units/Box
Thermal Resistance, Junction–to–Lead RqJL 20 °C/W 1N5908RL4 Axial Lead 1500/Tape & Reel
Forward Surge Current (Note 2.) IFSM 200 Amps
@ TA = 25°C
Operating and Storage TJ, Tstg – 65 to °C
Temperature Range +175
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C
per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
duty cycle = 4 pulses per minute maximum.
* Bidirectional device will not be available in this device

 Semiconductor Components Industries, LLC, 2001 78 Publication Order Number:

May, 2001 – Rev. 2 1N5908/D
 1N5908

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
IF
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage VC VBR VRWM
V
IR VF
IR Maximum Reverse Leakage Current @ VRWM IT
VBR Breakdown Voltage @ IT
IT Test Current
IF Forward Current IPP
VF Forward Voltage @ IF

Uni–Directional TVS

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 53 A)
Breakdown Voltage VC (Volts) (Note 7.)
VRWM
(Note 5.) IR @ VRWM VBR (Note 6.) (Volts) @ IT
Device
(Note 4.) (Volts) (µA) Min Nom Max (mA) @ IPP = 120 A @ IPP = 60 A @ IPP = 30 A
1N5908 5.0 300 6.0 – – 1.0 8.5 8.0 7.6
NOTES:
3. Square waveform, PW = 8.3 ms, Non–repetitive duty cycle.
4. 1N5908 is JEDEC registered as a unidirectional device only (no bidirectional option)
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltages in VBR are to be controlled.
7. Surge current waveform per Figure 4 and derate per Figure 2 of the General Data – 1500 W at the beginning of this group

http://onsemi.com
79
 1N5908




*

 
  
   ° 

*


 

   
.  

 
 
 "0#



 








/
,µ)
,µ)
,µ)
,µ)
()
 ()    



 
'  
.   !
 


"°#

Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve

  
% 

   "#


. "' #  


'+ ≤
,µ)  .  .

.

$&″
 
 
%  

 *
-    /


 $&″
*
"#

 
. *
-
$ 


'

 
   



  
 $ 
 
 


"°# ' 
"()#

Figure 3. Steady State Power Derating Figure 4. Pulse Waveform

/
/
/$
/

 


.

 ()
/

/
/

()
/$
/
 µ)

 µ)
/

/
/ /
 
  

 % %
"#
Figure 5. Typical Derating Factor for Duty Cycle

http://onsemi.com
80
 1N5908

APPLICATION NOTES

RESPONSE TIME circuit layout, minimum lead lengths and placing the
In most applications, the transient suppressor device is suppressor device as close as possible to the equipment or
placed in parallel with the equipment or component to be components to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitance operation.
effect is of minor importance in the parallel protection DUTY CYCLE DERATING
scheme because it only produces a time delay in the The data of Figure 1 applies for non-repetitive conditions
transition from the operating voltage to the clamp voltage as and at a lead temperature of 25°C. If the duty cycle increases,
shown in Figure 6. the peak power must be reduced as indicated by the curves
The inductive effects in the device are due to actual of Figure 5. Average power must be derated as the lead or
turn-on time (time required for the device to go from zero ambient temperature rises above 25°C. The average power
current to full current) and lead inductance. This inductive derating curve normally given on data sheets may be
effect produces an overshoot in the voltage across the normalized and used for this purpose.
equipment or component being protected as shown in At first glance the derating curves of Figure 5 appear to be
Figure 7. Minimizing this overshoot is very important in the in error as the 10 ms pulse has a higher derating factor than
application, since the main purpose for adding a transient the 10 µs pulse. However, when the derating factor for a
suppressor is to clamp voltage spikes. These devices have given pulse of Figure 5 is multiplied by the peak power value
excellent response time, typically in the picosecond range of Figure 1 for the same pulse, the results follow the
and negligible inductance. However, external inductive expected trend.
effects could produce unacceptable overshoot. Proper

TYPICAL PROTECTION CIRCUIT

412

*12  *

*12 "

#
*
. 

* *12 "
# * *



*

*

*12

'3

'  

% 
  *



' '

Figure 6. Figure 7.

http://onsemi.com
81
 1N5908

CLIPPER BIDIRECTIONAL DEVICES

1. Clipper-bidirectional devices are available in the 3. The 1N6267A through 1N6303A series are JEDEC
1.5KEXXA series and are designated with a “CA” registered devices and the registration does not include
suffix; for example, 1.5KE18CA. Contact your nearest a “CA” suffix. To order clipper-bidirectional devices
ON Semiconductor representative. one must add CA to the 1.5KE device title.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceeding table
(except for VF which does not apply).

http://onsemi.com
82
1N6373 - 1N6381 Series
(ICTE-5 - ICTE-36,
MPTE-5 - MPTE-45)

1500 Watt Peak Power

Mosorb Zener Transient
Voltage Suppressors http://onsemi.com

Unidirectional*
Mosorb devices are designed to protect voltage sensitive Cathode Anode
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable AXIAL LEAD
Surmetic axial leaded package and are ideally-suited for use in CASE 41A
communication systems, numerical controls, process controls, PLASTIC
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and L
MPTE
Bipolar integrated circuits. –xx
1N
Specification Features: 63xx
YYWW
• Working Peak Reverse Voltage Range – 5 V to 45 V
• Peak Power – 1500 Watts @ 1 ms L
• ESD Rating of Class 3 (>16 KV) per Human Body Model ICTE
–xx
• Maximum Clamp Voltage @ Peak Pulse Current YYWW
• Low Leakage < 5 µA Above 10 V
• Response Time is Typically < 1 ns L = Assembly Location
MPTE–xx = ON Device Code
Mechanical Characteristics: ICTE–xx = ON Device Code
CASE: Void-free, transfer-molded, thermosetting plastic 1N63xx = JEDEC Device Code
YY = Year
FINISH: All external surfaces are corrosion resistant and leads are
WW = Work Week
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds ORDERING INFORMATION
POLARITY: Cathode indicated by polarity band
Device Package Shipping
MOUNTING POSITION: Any
MPTE–xx Axial Lead 500 Units/Box
MAXIMUM RATINGS
MPTE–xxRL4 Axial Lead 1500/Tape & Reel
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) PPK 1500 Watts ICTE–xx Axial Lead 500 Units/Box
@ TL ≤ 25°C ICTE–xxRL4 Axial Lead 1500/Tape & Reel
Steady State Power Dissipation PD 5.0 Watts
@ TL ≤ 75°C, Lead Length = 3/8″ 1N63xx Axial Lead 500 Units/Box
Derated above TL = 75°C 20 mW/°C 1N63xxRL4 Axial Lead 1500/Tape & Reel
Thermal Resistance, Junction–to–Lead RJL 20 °C/W
NOTES:
Forward Surge Current (Note 2.) IFSM 200 Amps 1. Nonrepetitive current pulse per Figure 5 and der-
@ TA = 25°C ated above TA = 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW =
Operating and Storage TJ, Tstg – 65 to °C
8.3 ms, duty cycle = 4 pulses per minute maxi-
Temperature Range +175 mum.
*Please see 1N6382 – 1N6389 (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
for Bidirectional Devices

 Semiconductor Components Industries, LLC, 2001 83 Publication Order Number:

May, 2001 – Rev. 0 1N6373/D
 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
IF
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage VC VBR VRWM
V
IR VF
IR Maximum Reverse Leakage Current @ VRWM IT
VBR Breakdown Voltage @ IT
IT Test Current
VBR Maximum Temperature Variation of VBR IPP
IF Forward Current
VF Forward Voltage @ IF

Uni–Directional TVS

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
Breakdown Voltage VC @ IPP (Note 6.) VC (Volts) (Note 6.)
VRWM IR @
JEDEC 5.)
(Note 4.) VRWM VBR (Note (Volts) @ IT VC IPP VBR
Device Device @ IPP = @ IPP =
(ON Device) Marking (Volts) (µA) Min Nom Max (mA) (Volts) (A) 1A 10 A (mV/°C)
1N6373 1N6373
(MPTE–5) MPTE–5 5.0 300 6.0 – – 1.0 9.4 160 7.1 7.5 4.0
1N6374 1N6374
(MPTE–8) MPTE–8 8.0 25 9.4 – – 1.0 15 100 11.3 11.5 8.0
1N6375 1N6375
(MPTE–10) MPTE–10 10 2.0 11.7 – – 1.0 16.7 90 13.7 14.1 12
1N6376 1N6376
(MPTE–12) MPTE–12 12 2.0 14.1 – – 1.0 21.2 70 16.1 16.5 14
1N6377 1N6377
(MPTE–15) MPTE–15 15 2.0 17.6 – – 1.0 25 60 20.1 20.6 18
1N6378 1N6378
(MPTE–18) MPTE–18 18 2.0 21.2 – – 1.0 30 50 24.2 25.2 21
1N6379 1N6379
(MPTE–22) MPTE–22 22 2.0 25.9 – – 1.0 37.5 40 29.8 32 26
1N6380 1N6380
(MPTE–36) MPTE–36 36 2.0 42.4 – – 1.0 65.2 23 50.6 54.3 50
1N6381 1N6381
(MPTE–45) MPTE–45 45 2.0 52.9 – – 1.0 78.9 19 63.3 70 60
ICTE–5 ICTE–5 5.0 300 6.0 – – 1.0 9.4 160 7.1 7.5 4.0
ICTE–10 ICTE–10 10 2.0 11.7 – – 1.0 16.7 90 13.7 14.1 8.0
ICTE–12 ICTE–12 12 2.0 14.1 – – 1.0 21.2 70 16.1 16.5 12
ICTE–15 ICTE–15 15 2.0 17.6 – – 1.0 25 60 20.1 20.6 14
ICTE–18 ICTE–18 18 2.0 21.2 – – 1.0 30 50 24.2 25.2 18
ICTE–22 ICTE–22 22 2.0 25.9 – – 1.0 37.5 40 29.8 32 21
ICTE–36 ICTE–36 36 2.0 42.4 – – 1.0 65.2 23 50.6 54.3 26
NOTES:
3. Square waveform, PW = 8.3 ms, Non–repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.

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84
 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)

100
NONREPETITIVE

PEAK POWER OR CURRENT @ TA = 25°C

PULSE WAVEFORM

PEAK PULSE DERATING IN % OF

SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)

100

10 80

60

40

20
1 0
0.1µs 1µs 10µs 100µs 1 ms 10 ms 0 25 50 75 100 125 150 175 200
tP, PULSE WIDTH TA, AMBIENT TEMPERATURE (°C)

Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve

1N6373, ICTE-5, MPTE-5,

through
1N6389, ICTE-45, C, MPTE-45, C
10,000
MEASURED @
ZERO BIAS

1000
C, CAPACITANCE (pF)

MEASURED @ VRWM

100

10
1 10 100 1000
VBR, BREAKDOWN VOLTAGE (VOLTS)

Figure 3. Capacitance versus Breakdown Voltage

PD , STEADY STATE POWER DISSIPATION (WATTS)

PULSE WIDTH (tP) IS DEFINED AS

tr ≤ 10 s THAT POINT WHERE THE PEAK
3/8″ CURRENT DECAYS TO 50% OF IPP.
100 PEAK VALUE - IPP
5 3/8″
IPP, VALUE (%)

4 IPP
HALF VALUE -
3 2
50
2
tP
1

0 0
0 25 50 75 100 125 150 175 200 0 1 2 3 4
TL, LEAD TEMPERATURE (°C) t, TIME (ms)

Figure 4. Steady State Power Derating Figure 5. Pulse Waveform

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85
 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)

1N6373, ICTE-5, MPTE-5, 1.5KE6.8CA

through through
1N6389, ICTE-45, C, MPTE-45, C 1.5KE200CA
1000 VBR(MIN)=6.0 to 11.7V 1000 VBR(NOM)=6.8 to 13V
TL=25°C TL=25°C
500 tP=10µs 19V 500 tP=10µs 20V
42.4V 24V 43V
21.2V
200 200
IT , TEST CURRENT (AMPS)

IT , TEST CURRENT (AMPS)

75V
100 100
50 50

20 20 180V
10 10 120V
5 5

2 2
1 1
0.3 0.5 0.7 1 2 3 5 7 10 20 30 0.3 0.5 0.7 1 2 3 5 7 10 20 30
∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) ∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)

Figure 6. Dynamic Impedance

1
0.7
0.5
0.3
0.2
DERATING FACTOR

PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02 100 µs
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle

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86
 1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)

APPLICATION NOTES

RESPONSE TIME circuit layout, minimum lead lengths and placing the
In most applications, the transient suppressor device is suppressor device as close as possible to the equipment or
placed in parallel with the equipment or component to be components to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitance operation.
effect is of minor importance in the parallel protection DUTY CYCLE DERATING
scheme because it only produces a time delay in the The data of Figure 1 applies for non-repetitive conditions
transition from the operating voltage to the clamp voltage as and at a lead temperature of 25°C. If the duty cycle increases,
shown in Figure 8. the peak power must be reduced as indicated by the curves
The inductive effects in the device are due to actual of Figure 7. Average power must be derated as the lead or
turn-on time (time required for the device to go from zero ambient temperature rises above 25°C. The average power
current to full current) and lead inductance. This inductive derating curve normally given on data sheets may be
effect produces an overshoot in the voltage across the normalized and used for this purpose.
equipment or component being protected as shown in At first glance the derating curves of Figure 7 appear to be
Figure 9. Minimizing this overshoot is very important in the in error as the 10 ms pulse has a higher derating factor than
application, since the main purpose for adding a transient the 10 µs pulse. However, when the derating factor for a
suppressor is to clamp voltage spikes. These devices have given pulse of Figure 7 is multiplied by the peak power value
excellent response time, typically in the picosecond range of Figure 1 for the same pulse, the results follow the
and negligible inductance. However, external inductive expected trend.
effects could produce unacceptable overshoot. Proper

TYPICAL PROTECTION CIRCUIT

Zin

Vin LOAD VL

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 8. Figure 9.

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87
1N6382 - 1N6389 Series
(ICTE-10C - ICTE-36C,
MPTE-8C - MPTE-45C)

1500 Watt Peak Power

Mosorb Zener Transient
Voltage Suppressors http://onsemi.com

Bidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
AXIAL LEAD
Bipolar integrated circuits. CASE 41A
PLASTIC
Specification Features:
• Working Peak Reverse Voltage Range – 8 V to 45 V L
• Peak Power – 1500 Watts @ 1 ms MPTE
–xxC
• ESD Rating of Class 3 (>16 KV) per Human Body Model 1N
63xx
• Maximum Clamp Voltage @ Peak Pulse Current YYWW
• Low Leakage < 5 µA Above 10 V
• Response Time is Typically < 1 ns L
ICTE
Mechanical Characteristics: –xxC
YYWW
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
L = Assembly Location
readily solderable MPTE–xxC = ON Device Code
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: ICTE–xxC = ON Device Code
230°C, 1/16″ from the case for 10 seconds 1N63xx = JEDEC Device Code
POLARITY: Cathode band does not imply polarity YY = Year
WW = Work Week
MOUNTING POSITION: Any

MAXIMUM RATINGS
ORDERING INFORMATION
Rating Symbol Value Unit
Device Package Shipping
Peak Power Dissipation (Note 1.) PPK 1500 Watts
@ TL ≤ 25°C MPTE–xxC Axial Lead 500 Units/Box
Steady State Power Dissipation PD 5.0 Watts
MPTE–xxCRL4 Axial Lead 1500/Tape & Reel
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C 20 mW/°C ICTE–xxC Axial Lead 500 Units/Box
Thermal Resistance, Junction–to–Lead RJL 20 °C/W ICTE–xxCRL4 Axial Lead 1500/Tape & Reel
Operating and Storage TJ, Tstg – 65 to °C
Temperature Range +175 1N63xx Axial Lead 500 Units/Box

1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C 1N63xxRL4 Axial Lead 1500/Tape & Reel
per Figure 2.
*Please see 1N6373 – 1N6381 (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
for Unidirectional Devices

 Semiconductor Components Industries, LLC, 2001 88 Publication Order Number:

May, 2001 – Rev. 0 1N6382/D
 1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted) IPP
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
IT
VC Clamping Voltage @ IPP VC VBR VRWM IR
V
IR V
VRWM Working Peak Reverse Voltage IT RWM VBR VC

IR Maximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT
IPP
IT Test Current
VBR Maximum Temperature Variation of VBR Bi–Directional TVS

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Breakdown Voltage VC @ IPP (Note 4.) VC (Volts) (Note 4.)
VRWM IR @
JEDEC
(Note 2.) VRWM VBR (Note 3.) (Volts) @ IT VC IPP VBR
Device Device @ IPP @ IPP
(ON Device) Marking (Volts) (µA) Min Nom Max (mA) (Volts) (A) =1A = 10 A (mV/°C)
1N6382 1N6382
(MPTE–8C) MPTE–8C 8.0 25 9.4 – – 1.0 15 100 11.3 11.5 8.0
1N6383 1N6383
(MPTE–10C) MPTE–10C 10 2.0 11.7 – – 1.0 16.7 90 13.7 14.1 12
1N6384 1N6384
(MPTE–12C) MPTE–12C 12 2.0 14.1 – – 1.0 21.2 70 16.1 16.5 14
1N6385 1N6385
(MPTE–15C) MPTE–15C 15 2.0 17.6 – – 1.0 25 60 20.1 20.6 18
1N6386 1N6386
(MPTE–18C) MPTE–18C 18 2.0 21.2 – – 1.0 30 50 24.2 25.2 21
1N6387 1N6387
(MPTE–22C) MPTE–22C 22 2.0 25.9 – – 1.0 37.5 40 29.8 32 26
1N6388 1N6388
(MPTE–36C) MPTE–36C 36 2.0 42.4 – – 1.0 65.2 23 50.6 54.3 50
1N6389 1N6389
(MPTE–45C) MPTE–45C 45 2.0 52.9 – – 1.0 78.9 19 63.3 70 60
ICTE–10C ICTE–10C 10 2.0 11.7 – – 1.0 16.7 90 13.7 14.1 8.0
ICTE–12C ICTE–12C 12 2.0 14.1 – – 1.0 21.2 70 16.1 16.5 12
ICTE–15C ICTE–15C 15 2.0 17.6 – – 1.0 25 60 20.1 20.6 14
ICTE–18C ICTE–18C 18 2.0 21.2 – – 1.0 30 50 24.2 25.2 18
ICTE–22C ICTE–22C 22 2.0 25.9 – – 1.0 37.5 40 29.8 32 21
ICTE–36C ICTE–36C 36 2.0 42.4 – – 1.0 65.2 23 50.6 54.3 26
NOTES:
2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
3. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.
4. Surge current waveform per Figure 4 and derate per Figures 1 and 2.

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89
 1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

100
NONREPETITIVE

PEAK POWER OR CURRENT @ TA = 25°C

PULSE WAVEFORM

PEAK PULSE DERATING IN % OF

SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)

100

10 80

60

40

20
1 0
0.1µs 1µs 10µs 100µs 1 ms 10 ms 0 25 50 75 100 125 150 175 200
tP, PULSE WIDTH TA, AMBIENT TEMPERATURE (°C)

Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve

PD , STEADY STATE POWER DISSIPATION (WATTS)

PULSE WIDTH (tP) IS DEFINED AS

tr ≤ 10 s THAT POINT WHERE THE PEAK
3/8″ CURRENT DECAYS TO 50% OF IPP.
100 PEAK VALUE - IPP
5 3/8″
IPP, VALUE (%)

4 IPP
HALF VALUE -
3 2
50
2
tP
1

0 0
0 25 50 75 100 125 150 175 200 0 1 2 3 4
TL, LEAD TEMPERATURE (°C) t, TIME (ms)

Figure 3. Steady State Power Derating Figure 4. Pulse Waveform

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90
 1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

1N6373, ICTE-5, MPTE-5, 1.5KE6.8CA

through through
1N6389, ICTE-45, C, MPTE-45, C 1.5KE200CA
1000 VBR(MIN)=6.0 to 11.7V 1000 VBR(NOM)=6.8 to 13V
TL=25°C TL=25°C
500 tP=10µs 19V 500 tP=10µs 20V
42.4V 24V 43V
21.2V
200 200
IT , TEST CURRENT (AMPS)

IT , TEST CURRENT (AMPS)

75V
100 100
50 50

20 20 180V
10 10 120V
5 5

2 2
1 1
0.3 0.5 0.7 1 2 3 5 7 10 20 30 0.3 0.5 0.7 1 2 3 5 7 10 20 30
∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) ∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)

Figure 5. Dynamic Impedance

1
0.7
0.5
0.3
0.2
DERATING FACTOR

PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02 100 µs
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)
Figure 6. Typical Derating Factor for Duty Cycle

http://onsemi.com
91
 1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

APPLICATION NOTES

RESPONSE TIME circuit layout, minimum lead lengths and placing the
In most applications, the transient suppressor device is suppressor device as close as possible to the equipment or
placed in parallel with the equipment or component to be components to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitance operation.
effect is of minor importance in the parallel protection DUTY CYCLE DERATING
scheme because it only produces a time delay in the The data of Figure 1 applies for non-repetitive conditions
transition from the operating voltage to the clamp voltage as and at a lead temperature of 25°C. If the duty cycle increases,
shown in Figure 7. the peak power must be reduced as indicated by the curves
The inductive effects in the device are due to actual of Figure 6. Average power must be derated as the lead or
turn-on time (time required for the device to go from zero ambient temperature rises above 25°C. The average power
current to full current) and lead inductance. This inductive derating curve normally given on data sheets may be
effect produces an overshoot in the voltage across the normalized and used for this purpose.
equipment or component being protected as shown in At first glance the derating curves of Figure 6 appear to be
Figure 8. Minimizing this overshoot is very important in the in error as the 10 ms pulse has a higher derating factor than
application, since the main purpose for adding a transient the 10 µs pulse. However, when the derating factor for a
suppressor is to clamp voltage spikes. These devices have given pulse of Figure 6 is multiplied by the peak power value
excellent response time, typically in the picosecond range of Figure 1 for the same pulse, the results follow the
and negligible inductance. However, external inductive expected trend.
effects could produce unacceptable overshoot. Proper

TYPICAL PROTECTION CIRCUIT

Zin

Vin LOAD VL

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 7. Figure 8.

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92
 CHAPTER 4
Transient Voltage Suppressors –
Surface Mounted Data Sheets

http://onsemi.com
93
1PMT5.0AT3 Series

Zener Transient
Voltage Suppressor
POWERMITE Package
The 1PMT5.0AT3 Series is designed to protect voltage sensitive
components from high voltage, high energy transients. Excellent
clamping capability, high surge capability, low zener impedance and http://onsemi.com
fast response time. The advanced packaging technique provides for a
highly efficient micro miniature, space saving surface mount with its PLASTIC SURFACE MOUNT
unique heat sink design. The POWERMITE has the same thermal ZENER OVERVOLTAGE
performance as the SMA while being 50% smaller in footprint area,
and delivering one of the lowest height profiles (1.1 mm) in the
TRANSIENT SUPPRESSOR
industry. Because of its small size, it is ideal for use in cellular 5 – 58 VOLTS
phones, portable devices, business machines, power supplies and 175 WATT PEAK POWER
many other industrial/consumer applications.
Specification Features:
• Stand–off Voltage: 5 – 58 Volts 1 2
• Peak Power – 175 Watts @ 1 ms 1: CATHODE
• Maximum Clamp Voltage @ Peak Pulse Current 2: ANODE

• Low Leakage
• Response Time is Typically < 1 ns
• ESD Rating of Class 3 (> 16 kV) per Human Body Model 1
• Low Profile – Maximum Height of 1.1 mm
• Integral Heat Sink/Locking Tabs 2
• Full Metallic Bottom Eliminates Flux Entrapment
POWERMITE
• Small Footprint – Footprint Area of 8.45 mm2 CASE 457
• Supplied in 12 mm Tape and Reel – 12,000 Units per Reel PLASTIC
• POWERMITE is JEDEC Registered as DO–216AA
• Cathode Indicated by Polarity Band MARKING DIAGRAM

Mechanical Characteristics: D
1 Mxx 2
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are CATHODE ANODE
readily solderable Mxx = Specific Device Code
MOUNTING POSITION: Any xx = 5 – 58
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: = (See Table Next Page)
260°C for 10 Seconds D = Date Code

ORDERING INFORMATION

Device Package Shipping

1PMTxxAT3 POWERMITE 12,000/Tape & Reel

LEAD ORIENTATION IN TAPE:

Cathode (Short) Lead to Sprocket Holes

 Semiconductor Components Industries, LLC, 2001 94 Publication Order Number:

May, 2001 – Rev. 4 1PMT5.0AT3/D
 1PMT5.0AT3 Series

MAXIMUM RATINGS
Rating Symbol Value Unit
Maximum Ppk Dissipation @ TA = 25°C, (PW–10/1000 s) (Note 1.) Ppk 175 W
Maximum Ppk Dissipation @ TA = 25°C, (PW–8/20 s) (Note 1.) Ppk 1000 W
DC Power Dissipation @ TA = 25°C (Note 2.) °PD° 500 °mW
Derate above 25°C 4.0 mW/°C
Thermal Resistance from Junction to Ambient RθJA 248 °C/W
Thermal Resistance from Junction to Lead (Anode) RθJanode 35 °C/W
Maximum DC Power Dissipation (Note 3.) °PD° 3.2 W
Thermal Resistance from Junction to Tab (Cathode) RθJcathode 23 °C/W
Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C
1. Non–repetitive current pulse at TA = 25°C.
2. Mounted with recommended minimum pad size, DC board FR–4.
3. At Tab (Cathode) temperature, Ttab = 75°C I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
IF
otherwise noted, VF = 3.5 V Max. @ IF (Note 4.) = 35 A)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP VC VBR VRWM
V
VRWM Working Peak Reverse Voltage IR VF
IT
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
IPP
IF Forward Current
VF Forward Voltage @ IF Uni–Directional TVS
ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
VRWM VBR @ IT (V) (Note 6.) IT IR @ VRWM VC @ IPP IPP (A)

Device Marking (Note 5.) Min Nom Max (mA) (A) (V) (Note 7.)
1PMT5.0AT3 MKE 5.0 6.4 6.7 7.0 10 800 9.2 19
1PMT7.0AT3 MKM 7.0 7.78 8.2 8.6 10 500 12 14.6
1PMT12AT3 MLE 12 13.3 14.0 14.7 1.0 5.0 19.9 8.8
1PMT16AT3 MLP 16 17.8 18.75 19.7 1.0 5.0 26 7.0
1PMT18AT3 MLT 18 20.0 21.0 22.1 1.0 5.0 29.2 6.0
1PMT22AT3 MLX 22 24.4 25.6 26.9 1.0 5.0 35.5 4.9
1PMT24AT3 MLZ 24 26.7 28.1 29.5 1.0 5.0 38.9 4.5
1PMT26AT3 MME 26 28.9 30.4 31.9 1.0 5.0 42.1 4.2
1PMT28AT3 MMG 28 31.1 32.8 34.4 1.0 5.0 45.4 3.9
1PMT30AT3 MMK 30 33.3 35.1 36.8 1.0 5.0 48.4 3.6
1PMT33AT3 MMM 33 36.7 38.7 40.6 1.0 5.0 53.3 3.3
1PMT36AT3 MMP 36 40.0 42.1 44.2 1.0 5.0 58.1 3.0
1PMT40AT3 MMR 40 44.4 46.8 49.1 1.0 5.0 64.5 2.7
1PMT48AT3 MMX 48 53.3 56.1 58.9 1.0 5.0 77.4 2.3
1PMT51AT3 MMZ 51 56.7 59.7 62.7 1.0 5.0 82.4 2.1
1PMT58AT3 MNG 58 64.4 67.8 71.2 1.0 5.0 93.6 1.9
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater
than the DC or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at ambient temperature of 25°C.
7. Surge current waveform per Figure 2 and derate per Figure 4.

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95
 1PMT5.0AT3 Series

TYPICAL PROTECTION CIRCUIT

Zin

Vin LOAD VL

10,000
PULSE WIDTH (tP) IS DEFINED
tr AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
PP, PEAK POWER (WATTS)

OF IRSM.
100
1000 PEAK VALUE - IRSM tr≤ 10 µs
VALUE (%)

I
HALF VALUE - RSM
2
100 50

tP

10 0
1.0 10 100 1000 10,000 0 1 2 3 4
tP, PULSE WIDTH (s) t, TIME (ms)

Figure 1. Pulse Rating Curve Figure 2. 10 X 1000 s Pulse Waveform

100 160
tr PEAK VALUE IRSM @ 8 s
PEAK POWER OR CURRENT @ TA = 25° C

90 140
PEAK PULSE DERATING IN % OF

80 PULSE WIDTH (tP) IS DEFINED

% OF PEAK PULSE CURRENT

AS THAT POINT WHERE THE 120

70 PEAK CURRENT DECAY = 8 s
60 100
HALF VALUE IRSM/2 @ 20 s
50 80
40 60
30
tP 40
20
20
10
0 0
0 20 40 60 80 0 25 50 75 100 125 150
t, TIME (s) TA, AMBIENT TEMPERATURE (°C)

Figure 3. 8 X 20 s Pulse Waveform Figure 4. Pulse Derating Curve

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96
 1PMT5.0AT3 Series

P D , MAXIMUM POWER DISSIPATION (W)

1 3.5
0.7
0.5 3
DERATING FACTOR

0.3 2.5
0.2
PULSE WIDTH 2
0.1 10 ms TL
0.07 1.5
0.05
1 ms 1
0.03
0.02 100 µs 0.5
10 µs
0.01 0
0.1 0.2 0.5 1 2 5 10 20 50 100 25 50 75 100 125 150 175
D, DUTY CYCLE (%) T, TEMPERATURE (°C)

Figure 5. Typical Derating Factor for Duty Cycle Figure 6. Steady State Power Derating
V F, TYPICAL FORWARD VOLTAGE (VOLTS)

1.2 10,000

1.0
C, CAPACITANCE (pF)

0.8 1000
MEASURED @ ZERO BIAS
0.6

0.4 100 MEASURED @ 50% VRWM

0.2

0 10
–55 25 85 150 1 10 100
T, TEMPERATURE (°C) WORKING PEAK REVERSE VOLTAGE (VOLTS)

Figure 7. Forward Voltage Figure 8. Capacitance versus Working Peak

Reverse Voltage

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97
1SMA5.0AT3 Series

400 Watt Peak Power Zener

Transient Voltage Suppressors
Unidirectional*
The SMA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener http://onsemi.com
impedance and fast response time. The SMA series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable PLASTIC SURFACE MOUNT
Surmetic package and is ideally suited for use in communication ZENER OVERVOLTAGE
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
TRANSIENT SUPPRESSORS
industrial/consumer applications. 5.0–78 VOLTS
Specification Features: 400 WATTS PEAK POWER
• Working Peak Reverse Voltage Range – 5.0 V to 78 V
• Standard Zener Breakdown Voltage Range – 6.7 V to 91.25 V
• Peak Power – 400 Watts @ 1 ms
CATHODE ANODE
• ESD Rating of Class 3 (> 16 KV) per Human Body Model
• Response Time is Typically < 1 ns
• Flat Handling Surface for Accurate Placement
• Package Design for Top Slide or Bottom Circuit Board Mounting
• Low Profile Package
SMA
Mechanical Characteristics: CASE 403B
CASE: Void-free, transfer-molded plastic PLASTIC
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable MARKING DIAGRAM
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by molded polarity notch or polarity xx
LLYWW
band
MOUNTING POSITION: Any
xx = Specific Device Code
= (See Table on Page 100)
MAXIMUM RATINGS LL = Assembly Location
Please See the Table on the Following Page Y = Year
WW = Work Week

ORDERING INFORMATION

Device
Package Shipping

1SMAxxAT3 SMA 5000/Tape & Reel

*Please see 1SMA10CAT3 to 1SMA78CAT3 for

Bidirectional devices.
†The “T3” suffix refers to a 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 98 Publication Order Number:

May, 2001 – Rev. 4 1SMA5.0AT3/D
 1SMA5.0AT3 Series

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms PPK 400 W
DC Power Dissipation @ TL = 75°C PD 1.5 W
Measured Zero Lead Length (Note 2.)
Derate Above 75°C 20 mW/°C
Thermal Resistance from Junction to Lead RJL 50 °C/W
DC Power Dissipation (Note 3.) @ TA = 25°C PD 0.5 W
Derate Above 25°C 4.0 mW/°C
Thermal Resistance from Junction to Ambient RJA 250 °C/W
Forward Surge Current (Note 4.) @ TA = 25°C IFSM 40 A
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
1. 10 X 1000 s, non–repetitive
2. 1″ square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS I
(TA = 25°C unless otherwise noted, VF = 3.5 V Max. @
IF = 30 A for all types) (Note 5.) IF

Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP VC VBR VRWM
V
VRWM Working Peak Reverse Voltage IR VF
IT
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
IPP
IF Forward Current
VF Forward Voltage @ IF Uni–Directional TVS
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non–repetitive
duty cycle.

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 1SMA5.0AT3 Series

ELECTRICAL CHARACTERISTICS
Breakdown Voltage VC @ IPP (Note 8.)
VRWM
(Note 6.) IR @ VRWM VBR (Volts) (Note 7.) @ IT VC IPP
Device
Device Marking Volts µA Min Nom Max mA Volts Amps
1SMA5.0AT3 QE 5.0 400 6.4 6.7 7.0 10 9.2 43.5
1SMA6.0AT3 QG 6.0 400 6.67 7.02 7.37 10 10.3 38.8
1SMA6.5AT3 QK 6.5 250 7.22 7.6 7.98 10 11.2 35.7
1SMA7.0AT3 QM 7.0 250 7.78 8.19 8.6 10 12.0 33.3
1SMA7.5AT3 QP 7.5 50 8.33 8.77 9.21 1 12.9 31.0
1SMA8.0AT3 QR 8.0 25 8.89 9.36 9.83 1 13.6 29.4
1SMA8.5AT3 QT 8.5 5.0 9.44 9.92 10.4 1 14.4 27.8
1SMA9.0AT3 QV 9.0 2.5 10 10.55 11.1 1 15.4 26.0
1SMA10AT3 QX 10 2.5 11.1 11.7 12.3 1 17.0 23.5
1SMA11AT3 QZ 11 2.5 12.2 12.85 13.5 1 18.2 22.0
1SMA12AT3 RE 12 2.5 13.3 14.0 14.7 1 19.9 20.1
1SMA13AT3 RG 13 2.5 14.4 15.15 15.9 1 21.5 18.6
1SMA14AT3 RK 14 2.5 15.6 16.4 17.2 1 23.2 17.2
1SMA15AT3 RM 15 2.5 16.7 17.6 18.5 1 24.4 16.4
1SMA16AT3 RP 16 2.5 17.8 18.75 19.7 1 26.0 15.4
1SMA17AT3 RR 17 2.5 18.9 19.9 20.9 1 27.6 14.5
1SMA18AT3 RT 18 2.5 20 21.05 22.1 1 29.2 13.7
1SMA20AT3 RV 20 2.5 22.2 23.35 24.5 1 32.4 12.3
1SMA22AT3 RX 22 2.5 24.4 25.65 26.9 1 35.5 11.3
1SMA24AT3 RZ 24 2.5 26.7 28.1 29.5 1 38.9 10.3
1SMA26AT3 SE 26 2.5 28.9 30.4 31.9 1 42.1 9.5
1SMA28AT3 SG 28 2.5 31.1 32.75 34.4 1 45.4 8.8
1SMA30AT3 SK 30 2.5 33.3 35.05 36.8 1 48.4 8.3
1SMA33AT3 SM 33 2.5 36.7 38.65 40.6 1 53.3 7.5
1SMA36AT3 SP 36 2.5 40 42.1 44.2 1 58.1 6.9
1SMA40AT3 SR 40 2.5 44.4 46.75 49.1 1 64.5 6.2
1SMA43AT3 ST 43 2.5 47.8 50.3 52.8 1 69.4 5.8
1SMA45AT3 SV 45 2.5 50 52.65 55.3 1 72.2 5.5
1SMA48AT3 SX 48 2.5 53.3 56.1 58.9 1 77.4 5.2
1SMA51AT3 SZ 51 2.5 56.7 59.7 62.7 1 82.4 4.9
1SMA54AT3 TE 54 2.5 60 63.15 66.3 1 87.1 4.6
1SMA58AT3 TG 58 2.5 64.4 67.8 71.5 1 93.6 4.3
1SMA60AT3 TK 60 2.5 66.7 70.2 73.7 1 96.8 4.1
1SMA64AT3 TM 64 2.5 71.1 74.85 78.6 1 103 3.9
1SMA70AT3 TP 70 2.5 77.8 81.9 86.0 1 113 3.5
1SMA75AT3 TR 75 2.5 83.3 87.7 92.1 1 121 3.3
1SMA78AT3 TS 78 2.5 86.7 91.25 95.8 1 126 3.2
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level
7. VBR measured at pulse test current IT at an ambient temperature of 25°C
8. Surge current waveform per Figure 2 and derate per Figure 3

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100
 1SMA5.0AT3 Series

RATING AND TYPICAL CHARACTERISTIC CURVES

100 120
TA = 25°C
NONREPETITIVE ≤ 10 µs
PW (ID) IS DEFINED AS THE

Ippm, PEAK PULSE CURRENT (%)

PULSE WAVEFORM 100
POINT WHERE THE PEAK CURRENT
SHOWN IN FIGURE 2. PEAK VALUE
Ppk , PEAK POWER (kW)

DECAYS TO 50% OF Ipp.

10 TA = 25°C 80 Ippm

60 HALF VALUE - Ipp/2

1 40
10/1000 µs WAVEFORM
AS DEFINED BY R.E.A.
20
td

0.1 0
10-4 0.001 0.01 0.1 1 10 0 1 2 3 4 5
tP, PULSE WIDTH (ms) t, TIME (ms)

Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform

120 10,000
10 x 1000 WAVEFORM TJ = 25°C
f = 1 MHz
PEAK PULSE DERATING IN % OF

100 AS DEFINED BY R.E.A.

MEASURED AT
PEAK POWER OR CURRENT

Vsig = 50 mVp-p
ZERO BIAS
C, CAPACITANCE (pF)

80 1,000

60

MEASURED AT
40 100
STAND-OFF
VOLTAGE, VWM
20

0 10
0 40 80 120 160 200 1 2 5 10 20 50 100 200
TA, AMBIENT TEMPERATURE (°C) V(BR), BREAKDOWN VOLTAGE (VOLTS)

Figure 3. Pulse Derating Curve Figure 4. Typical Junction Capacitance

6
PD , MAXIMUM POWER DISSIPATION (WATTS)

3 @ TL = 75°C
PD = 1.5 W
2

@ TA = 25°C
1 PD = 0.5 W

0
0 25 50 75 100 125 150
T, TEMPERATURE (°C)

Figure 5. Steady State Power Derating

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101
1SMA10CAT3 Series

400 Watt Peak Power Zener

Transient Voltage Suppressors
Bidirectional*
The SMA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener http://onsemi.com
impedance and fast response time. The SMA series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable PLASTIC SURFACE MOUNT
Surmetic package and is ideally suited for use in communication ZENER OVERVOLTAGE
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
TRANSIENT SUPPRESSORS
industrial/consumer applications. 10–78 VOLTS VR
Specification Features: 400 WATTS PEAK POWER
• Working Peak Reverse Voltage Range – 10 V to 78 V
• Standard Zener Breakdown Voltage Range – 11.7 V to 91.3 V
• Peak Power – 400 Watts @ 1 ms
• ESD Rating of Class 3 (> 16 KV) per Human Body Model
• Response Time is Typically < 1 ns
• Flat Handling Surface for Accurate Placement
• Package Design for Top Slide or Bottom Circuit Board Mounting
• Low Profile Package
SMA
Mechanical Characteristics: CASE 403B
CASE: Void-free, transfer-molded plastic PLASTIC
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable MARKING DIAGRAM
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode polarity notch does not indicate polarity xxC
LLYWW
MOUNTING POSITION: Any
MAXIMUM RATINGS
xxC = Specific Device Code
Rating Symbol Value Unit = (See Table Next Page)
Peak Power Dissipation (Note 1.) PPK 400 W LL = Assembly Location
@ TL = 25°C, Pulse Width = 1 ms Y = Year
WW = Work Week
DC Power Dissipation @ TL = 75°C PD 1.5 W
Measured Zero Lead Length (Note 2.)
Derate Above 75°C 20 mW/°C ORDERING INFORMATION
Thermal Resistance from Junction to Lead RJL 50 °C/W
Device
Package Shipping
DC Power Dissipation (Note 3.) @ TA = 25°C PD 0.5 W
Derate Above 25°C 1SMAxxCAT3 SMA 5000/Tape & Reel
Thermal Resistance from Junction 4.0 mW/°C
to Ambient RJA 250 °C/W
Operating and Storage TJ, Tstg –65 to °C †The “T3” suffix refers to a 13 inch reel.
Temperature Range +150
1. 10 X 1000 s, non–repetitive
2. 1″ square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403B case outline dimensions spec.
*Please see 1SMA5.0AT3 to 1SMA78AT3 for Unidirectional devices.

 Semiconductor Components Industries, LLC, 2001 102 Publication Order Number:

May, 2001 – Rev. 4 1SMA10CAT3/D
 1SMA10CAT3 Series

ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted) IPP
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
IT
VC Clamping Voltage @ IPP VC VBR VRWM IR
V
VRWM Working Peak Reverse Voltage IR VRWM VBR VC
IT
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IPP
IT Test Current
Bi–Directional TVS

ELECTRICAL CHARACTERISTICS
Breakdown Voltage VC @ IPP (Note 6.)
VRWM
(Note 4.) IR @ VRWM VBR (Volts) (Note 5.) @ IT VC IPP
Device
Device Marking Volts µA Min Nom Max mA Volts Amps
1SMA10CAT3 QXC 10 2.5 11.1 11.69 12.27 1.0 17.0 23.5
1SMA11CAT3 QZC 11 2.5 12.2 12.84 13.48 1.0 18.2 22.0
1SMA12CAT3 REC 12 2.5 13.3 14.00 14.70 1.0 19.9 20.1
1SMA13CAT3 RGC 13 2.5 14.4 15.16 15.92 1.0 21.5 18.6
1SMA14CAT3 RKC 14 2.5 15.6 16.42 17.24 1.0 23.2 17.2
1SMA15CAT3 RMC 15 2.5 16.7 17.58 18.46 1.0 24.4 16.4
1SMA16CAT3 RPC 16 2.5 17.8 18.74 19.67 1.0 26.0 15.4
1SMA17CAT3 RRC 17 2.5 18.9 19.90 20.89 1.0 27.6 14.5
1SMA18CAT3 RTC 18 2.5 20 21.06 22.11 1.0 29.2 13.7
1SMA20CAT3 RVC 20 2.5 22.2 23.37 24.54 1.0 32.4 12.3
1SMA22CAT3 RXC 22 2.5 24.4 25.69 26.97 1.0 35.5 11.3
1SMA24CAT3 RZC 24 2.5 26.7 28.11 29.51 1.0 38.9 10.3
1SMA26CAT3 SEC 26 2.5 28.9 30.42 31.94 1.0 42.1 9.5
1SMA28CAT3 SGC 28 2.5 31.1 32.74 34.37 1.0 45.4 8.8
1SMA30CAT3 SKC 30 2.5 33.3 35.06 36.81 1.0 48.4 8.3
1SMA33CAT3 SMC 33 2.5 36.7 38.63 40.56 1.0 53.3 7.5
1SMA36CAT3 SPC 36 2.5 40 42.11 44.21 1.0 58.1 6.9
1SMA40CAT3 SRC 40 2.5 44.4 46.74 49.07 1.0 64.5 6.2
1SMA43CAT3 STC 43 2.5 47.8 50.32 52.83 1.0 69.4 5.8
1SMA45CAT3 SVC 45 2.5 50 52.63 55.26 1.0 72.2 5.5
1SMA48CAT3 SXC 48 2.5 53.3 56.11 58.91 1.0 77.4 5.2
1SMA51CAT3 SZC 51 2.5 56.7 59.69 62.67 1.0 82.4 4.9
1SMA54CAT3 TEC 54 2.5 60 63.16 66.32 1.0 87.1 4.6
1SMA58CAT3 TGC 58 2.5 64.4 67.79 71.18 1.0 93.6 4.3
1SMA60CAT3 TKC 60 2.5 66.7 70.21 73.72 1.0 96.8 4.1
1SMA64CAT3 TMC 64 2.5 71.1 74.84 78.58 1.0 103 3.9
1SMA70CAT3 TPC 70 2.5 77.8 81.90 85.99 1.0 113 3.5
1SMA75CAT3 TRC 75 2.5 83.3 87.69 92.07 1.0 121 3.3
1SMA78CAT3 TTC 78 2.5 86.7 91.27 95.83 1.0 126 3.2
4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level
5. VBR measured at pulse test current IT at an ambient temperature of 25°C
6. Surge current waveform per Figure 2 and derate per Figure 3

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103
 1SMA10CAT3 Series

RATING AND TYPICAL CHARACTERISTIC CURVES

100 120
TA = 25°C
NONREPETITIVE = 10 µs
PW (ID) IS DEFINED AS THE

Ippm, PEAK PULSE CURRENT (%)

PULSE WAVEFORM 100
POINT WHERE THE PEAK CURRENT
SHOWN IN FIGURE 2. PEAK VALUE
Ppk , PEAK POWER (kW)

DECAYS TO 50% OF Ipp.

10 TA = 25°C 80 Ippm

60 HALF VALUE - Ipp/2

1 40
10/1000 µs WAVEFORM
AS DEFINED BY R.E.A.
20
td

0.1 0
10-4 0.001 0.01 0.1 1 10 0 1 2 3 4 5
tP, PULSE WIDTH (ms) t, TIME (ms)

Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform

120
10 x 1000 WAVEFORM
PEAK PULSE DERATING IN % OF

100 AS DEFINED BY R.E.A.

PEAK POWER OR CURRENT

80

60

40

20

0
0 40 80 120 160 200
TA, AMBIENT TEMPERATURE (°C)

Figure 3. Pulse Derating Curve

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104
1SMB5.0AT3 Series

600 Watt Peak Power Zener

Transient Voltage Suppressors
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener http://onsemi.com
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable PLASTIC SURFACE MOUNT
Surmetic package and is ideally suited for use in communication ZENER OVERVOLTAGE
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
TRANSIENT SUPPRESSORS
industrial/consumer applications. 5.0–170 VOLTS
Specification Features: 600 WATT PEAK POWER
• Working Peak Reverse Voltage Range – 5.0 V to 170 V
• Standard Zener Breakdown Voltage Range – 6.7 V to 199 V
• Peak Power – 600 Watts @ 1 ms
Cathode Anode
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
Mechanical Characteristics: SMB
CASE 403A
CASE: Void-free, transfer-molded, thermosetting plastic PLASTIC
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM
260°C for 10 Seconds
LEADS: Modified L–Bend providing more contact area to bond pads YWW
POLARITY: Cathode indicated by polarity band xx
MOUNTING POSITION: Any
Y = Year
WW = Work Week
MAXIMUM RATINGS xx = Specific Device Code
= (See Table Page 107)
Please See the Table on the Following Page

ORDERING INFORMATION
*Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices. Device
Package Shipping

1SMBxxxAT3 SMB 2500/Tape & Reel

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

†The “T3” suffix refers to a 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 105 Publication Order Number:

May, 2001 – Rev. 4 1SMB5.0AT3/D
 1SMB5.0AT3 Series

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms PPK 600 W
DC Power Dissipation @ TL = 75°C PD 3.0 W
Measured Zero Lead Length (Note 2.)
Derate Above 75°C 40 mW/°C
Thermal Resistance from Junction to Lead RJL 25 °C/W
DC Power Dissipation (Note 3.) @ TA = 25°C PD 0.55 W
Derate Above 25°C 4.4 mW/°C
Thermal Resistance from Junction to Ambient RJA 226 °C/W
Forward Surge Current (Note 4.) @ TA = 25°C IFSM 100 A
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
1. 10 X 1000 s, non–repetitive
2. 1″ square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 3.5 V Max. @ IF (Note 5.) = 30 A)
IF
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage VC VBR VRWM
V
IR VF
IR Maximum Reverse Leakage Current @ VRWM IT
VBR Breakdown Voltage @ IT
IT Test Current
IF Forward Current IPP
VF Forward Voltage @ IF
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, Uni–Directional TVS
non–repetitive duty cycle.

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106
 1SMB5.0AT3 Series

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage VC @ IPP (Note 8.)
VRWM
(Note 6.) IR @ VRWM VBR (Note 7.) Volts @ IT VC IPP
Device
Device Marking Volts µA Min Nom Max mA Volts Amps
1SMB5.0AT3 KE 5.0 800 6.40 6.7 7.0 10 9.2 65.2
1SMB6.0AT3 KG 6.0 800 6.67 7.02 7.37 10 10.3 58.3
1SMB6.5AT3 KK 6.5 500 7.22 7.6 7.98 10 11.2 53.6
1SMB7.0AT3 KM 7.0 500 7.78 8.19 8.6 10 12.0 50.0
1SMB7.5AT3 KP 7.5 100 8.33 8.77 9.21 1.0 12.9 46.5
1SMB8.0AT3 KR 8.0 50 8.89 9.36 9.83 1.0 13.6 44.1
1SMB8.5AT3 KT 8.5 10 9.44 9.92 10.4 1.0 14.4 41.7
1SMB9.0AT3 KV 9.0 5.0 10.0 10.55 11.1 1.0 15.4 39.0
1SMB10AT3 KX 10 5.0 11.1 11.7 12.3 1.0 17.0 35.3
1SMB11AT3 KZ 11 5.0 12.2 12.85 13.5 1.0 18.2 33.0
1SMB12AT3 LE 12 5.0 13.3 14 14.7 1.0 19.9 30.2
1SMB13AT3 LG 13 5.0 14.4 15.15 15.9 1.0 21.5 27.9
1SMB14AT3 LK 14 5.0 15.6 16.4 17.2 1.0 23.2 25.8
1SMB15AT3 LM 15 5.0 16.7 17.6 18.5 1.0 24.4 24.0
1SMB16AT3 LP 16 5.0 17.8 18.75 19.7 1.0 26.0 23.1
1SMB17AT3 LR 17 5.0 18.9 19.9 20.9 1.0 27.6 21.7
1SMB18AT3 LT 18 5.0 20.0 21.05 22.1 1.0 29.2 20.5
1SMB20AT3 LV 20 5.0 22.2 23.35 24.5 1.0 32.4 18.5
1SMB22AT3 LX 22 5.0 24.4 25.65 26.9 1.0 35.5 16.9
1SMB24AT3 LZ 24 5.0 26.7 28.1 29.5 1.0 38.9 15.4
1SMB26AT3 ME 26 5.0 28.9 30.4 31.9 1.0 42.1 14.2
1SMB28AT3 MG 28 5.0 31.1 32.75 34.4 1.0 45.4 13.2
1SMB30AT3 MK 30 5.0 33.3 35.05 36.8 1.0 48.4 12.4
1SMB33AT3 MM 33 5.0 36.7 38.65 40.6 1.0 53.3 11.3
1SMB36AT3 MP 36 5.0 40.0 42.1 44.2 1.0 58.1 10.3
1SMB40AT3 MR 40 5.0 44.4 46.75 49.1 1.0 64.5 9.3
1SMB43AT3 MT 43 5.0 47.8 50.3 52.8 1.0 69.4 8.6
1SMB45AT3 MV 45 5.0 50.0 52.65 55.3 1.0 72.7 8.3
1SMB48AT3 MX 48 5.0 53.3 56.1 58.9 1.0 77.4 7.7
1SMB51AT3 MZ 51 5.0 56.7 59.7 62.7 1.0 82.4 7.3
1SMB54AT3 NE 54 5.0 60.0 63.15 66.3 1.0 87.1 6.9
1SMB58AT3 NG 58 5.0 64.4 67.8 71.2 1.0 93.6 6.4
1SMB60AT3 NK 60 5.0 66.7 70.2 73.7 1.0 96.8 6.2
1SMB64AT3 NM 64 5.0 71.1 74.85 78.6 1.0 103 5.8
1SMB70AT3 NP 70 5.0 77.8 81.9 86 1.0 113 5.3
1SMB75AT3 NR 75 5.0 83.3 87.7 92.1 1.0 121 4.9
1SMB78AT3 NT 78 5.0 86.7 91.25 95.8 1.0 126 4.7
1SMB85AT3 NV 85 5.0 94.4 99.2 104 1.0 137 4.4
1SMB90AT3 NX 90 5.0 100 105.5 111 1.0 146 4.1
1SMB100AT3 NZ 100 5.0 111 117 123 1.0 162 3.7
1SMB110AT3 PE 110 5.0 122 128.5 135 1.0 177 3.4
1SMB120AT3 PG 120 5.0 133 140 147 1.0 193 3.1
1SMB130AT3 PK 130 5.0 144 151.5 159 1.0 209 2.9
1SMB150AT3 PM 150 5.0 167 176 185 1.0 243 2.5
1SMB160AT3 PP 160 5.0 178 187.5 197 1.0 259 2.3
1SMB170AT3 PR 170 5.0 189 199 209 1.0 275 2.2
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data – 600 W at the beginning of this group.

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107
 1SMB5.0AT3 Series

100
PULSE WIDTH (tP) IS DEFINED AS
NONREPETITIVE THAT POINT WHERE THE PEAK
tr≤ 10 µs
PULSE WAVEFORM
PPK, PEAK POWER (kW)

CURRENT DECAYS TO 50% OF IPP.

SHOWN IN FIGURE 2
100
10 PEAK VALUE - IPP

VALUE (%)
IPP
HALF VALUE -
2
1 50

tP

0.1 0
0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms 0 1 2 3 4
tP, PULSE WIDTH t, TIME (ms)

Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform

160
TYPICAL PROTECTION CIRCUIT
PEAK POWER OR CURRENT @ TA = 25° C

140
PEAK PULSE DERATING IN % OF

Zin
120

100

80 Vin LOAD VL
60

40

20

0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)

Figure 3. Pulse Derating Curve

C, CAPACITANCE (pF)

10,000

MEASURED @
ZERO BIAS
1000

MEASURED @ VRWM
100

10
0.1 1 10 100 1000
VBR, BREAKDOWN VOLTAGE (VOLTS)

Figure 4. Capacitance versus Breakdown

Voltage

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108
 1SMB5.0AT3 Series

APPLICATION NOTES

RESPONSE TIME minimum lead lengths and placing the suppressor device as
In most applications, the transient suppressor device is close as possible to the equipment or components to be
placed in parallel with the equipment or component to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitive operation.
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the DUTY CYCLE DERATING
transition from the operating voltage to the clamp voltage as The data of Figure 1 applies for non-repetitive conditions
shown in Figure 5. and at a lead temperature of 25°C. If the duty cycle increases,
The inductive effects in the device are due to actual the peak power must be reduced as indicated by the curves
turn-on time (time required for the device to go from zero of Figure 7. Average power must be derated as the lead or
current to full current) and lead inductance. This inductive ambient temperature rises above 25°C. The average power
effect produces an overshoot in the voltage across the derating curve normally given on data sheets may be
equipment or component being protected as shown in normalized and used for this purpose.
Figure 6. Minimizing this overshoot is very important in the At first glance the derating curves of Figure 7 appear to be
application, since the main purpose for adding a transient in error as the 10 ms pulse has a higher derating factor than
suppressor is to clamp voltage spikes. The SMB series have the 10 µs pulse. However, when the derating factor for a
a very good response time, typically < 1 ns and negligible given pulse of Figure 7 is multiplied by the peak power value
inductance. However, external inductive effects could of Figure 1 for the same pulse, the results follow the
produce unacceptable overshoot. Proper circuit layout, expected trend.

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109
 1SMB5.0AT3 Series

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 5. Figure 6.

1
0.7
0.5
DERATING FACTOR

0.3
0.2
PULSE WIDTH
0.1 10 ms
0.07
0.05
1 ms
0.03
0.02 100 µs
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)

Figure 7. Typical Derating Factor for Duty Cycle

UL RECOGNITION

The entire series has Underwriters Laboratory including Strike Voltage Breakdown test, Endurance
Recognition for the classification of protectors (QVGV2) Conditioning, Temperature test, Dielectric
under the UL standard for safety 497B and File #116110. Voltage-Withstand test, Discharge test and several more.
Many competitors only have one or two devices recognized Whereas, some competitors have only passed a
or have recognition in a non-protective category. Some flammability test for the package material, we have been
competitors have no recognition at all. With the UL497B recognized for much more to be included in their Protector
recognition, our parts successfully passed several tests category.

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110
P6SMB6.8AT3 Series

600 Watt Peak Power Zener

Transient Voltage Suppressors
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener http://onsemi.com
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable PLASTIC SURFACE MOUNT
Surmetic package and is ideally suited for use in communication ZENER OVERVOLTAGE
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
TRANSIENT SUPPRESSORS
industrial/consumer applications. 5.8–171 VOLTS
Specification Features: 600 WATT PEAK POWER
• Working Peak Reverse Voltage Range – 5.8 to 171 V
• Standard Zener Breakdown Voltage Range – 6.8 to 200 V
• Peak Power – 600 Watts @ 1 ms
Cathode Anode
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
Mechanical Characteristics: SMB
CASE 403A
CASE: Void-free, transfer-molded, thermosetting plastic PLASTIC
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM
260°C for 10 Seconds
LEADS: Modified L–Bend providing more contact area to bond pads YWW
POLARITY: Cathode indicated by polarity band xxxA
MOUNTING POSITION: Any
Y = Year
WW = Work Week
MAXIMUM RATINGS xxxA = Specific Device Code
= (See Table on Page
Please See the Table on the Following Page
113)

ORDERING INFORMATION
*Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices. Device
Package Shipping

P6SMBxxxAT3 SMB 2500/Tape & Reel

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

†The “T3” suffix refers to a 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 111 Publication Order Number:

May, 2001 – Rev. 5 P6SMB6.8AT3/D
 P6SMB6.8AT3 Series

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms PPK 600 W
DC Power Dissipation @ TL = 75°C PD 3.0 W
Measured Zero Lead Length (Note 2.)
Derate Above 75°C 40 mW/°C
Thermal Resistance from Junction to Lead RJL 25 °C/W
DC Power Dissipation (Note 3.) @ TA = 25°C PD 0.55 W
Derate Above 25°C 4.4 mW/°C
Thermal Resistance from Junction to Ambient RJA 226 °C/W
Forward Surge Current (Note 4.) @ TA = 25°C IFSM 100 A
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
1. 10 X 1000 s, non–repetitive
2. 1″ square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS I
(TA = 25°C unless otherwise noted, VF = 3.5 V Max. @
IF (Note 4) = 30 A) (Note 5.) IF

Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP VC VBR VRWM
V
VRWM Working Peak Reverse Voltage IR VF
IT
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
IPP
VBR Maximum Temperature Coefficient of VBR
IF Forward Current Uni–Directional TVS
VF Forward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non–repetitive
duty cycle

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 P6SMB6.8AT3 Series

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage VC @ IPP (Note 8.)
VRWM
(Note 6.) IR @ VRWM VBR Volts (Note 7.) @ IT VC IPP VBR
Device
Device Marking Volts µA Min Nom Max mA Volts Amps %/°C
P6SMB6.8AT3 6V8A 5.8 1000 6.45 6.8 7.14 10 10.5 57 0.057
P6SMB7.5AT3 7V5A 6.4 500 7.13 7.51 7.88 10 11.3 53 0.061
P6SMB8.2AT3 8V2A 7.02 200 7.79 8.2 8.61 10 12.1 50 0.065
P6SMB9.1AT3 9V1A 7.78 50 8.65 9.1 9.55 1 13.4 45 0.068
P6SMB10AT3 10A 8.55 10 9.5 10 10.5 1 14.5 41 0.073
P6SMB11AT3 11A 9.4 5 10.5 11.05 11.6 1 15.6 38 0.075
P6SMB12AT3 12A 10.2 5 11.4 12 12.6 1 16.7 36 0.078
P6SMB13AT3 13A 11.1 5 12.4 13.05 13.7 1 18.2 33 0.081
P6SMB15AT3 15A 12.8 5 14.3 15.05 15.8 1 21.2 28 0.084
P6SMB16AT3 16A 13.6 5 15.2 16 16.8 1 22.5 27 0.086
P6SMB18AT3 18A 15.3 5 17.1 18 18.9 1 25.2 24 0.088
P6SMB20AT3 20A 17.1 5 19 20 21 1 27.7 22 0.09
P6SMB22AT3 22A 18.8 5 20.9 22 23.1 1 30.6 20 0.092
P6SMB24AT3 24A 20.5 5 22.8 24 25.2 1 33.2 18 0.094
P6SMB27AT3 27A 23.1 5 25.7 27.05 28.4 1 37.5 16 0.096
P6SMB30AT3 30A 25.6 5 28.5 30 31.5 1 41.4 14.4 0.097
P6SMB33AT3 33A 28.2 5 31.4 33.05 34.7 1 45.7 13.2 0.098
P6SMB36AT3 36A 30.8 5 34.2 36 37.8 1 49.9 12 0.099
P6SMB39AT3 39A 33.3 5 37.1 39.05 41 1 53.9 11.2 0.1
P6SMB43AT3 43A 36.8 5 40.9 43.05 45.2 1 59.3 10.1 0.101
P6SMB47AT3 47A 40.2 5 44.7 47.05 49.4 1 64.8 9.3 0.101
P6SMB51AT3 51A 43.6 5 48.5 51.05 53.6 1 70.1 8.6 0.102
P6SMB56AT3 56A 47.8 5 53.2 56 58.8 1 77 7.8 0.103
P6SMB62AT3 62A 53 5 58.9 62 65.1 1 85 7.1 0.104
P6SMB68AT3 68A 58.1 5 64.6 68 71.4 1 92 6.5 0.104
P6SMB75AT3 75A 64.1 5 71.3 75.05 78.8 1 103 5.8 0.105
P6SMB82AT3 82A 70.1 5 77.9 82 86.1 1 113 5.3 0.105
P6SMB91AT3 91A 77.8 5 86.5 91 95.5 1 125 4.8 0.106
P6SMB100AT3 100A 85.5 5 95 100 105 1 137 4.4 0.106
P6SMB110AT3 110A 94 5 105 110.5 116 1 152 4.0 0.107
P6SMB120AT3 120A 102 5 114 120 126 1 165 3.6 0.107
P6SMB130AT3 130A 111 5 124 130.5 137 1 179 3.3 0.107
P6SMB150AT3 150A 128 5 143 150.5 158 1 207 2.9 0.108
P6SMB160AT3 160A 136 5 152 160 168 1 219 2.7 0.108
P6SMB170AT3 170A 145 5 162 170 179 1 234 2.6 0.108
P6SMB180AT3 180A 154 5 171 180 189 1 246 2.4 0.108
P6SMB200AT3 200A 171 5 190 200 210 1 274 2.2 0.108
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 2 and derate per Figure 3.

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113
 P6SMB6.8AT3 Series

100
PULSE WIDTH (tP) IS DEFINED AS
NONREPETITIVE THAT POINT WHERE THE PEAK
tr≤ 10 µs
PULSE WAVEFORM CURRENT DECAYS TO 50% OF IPP.
SHOWN IN FIGURE 2
PP, PEAK POWER (kW)

100
10 PEAK VALUE - IPP

VALUE (%)
IPP
HALF VALUE -
2
1 50

tP

0.1 0
0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms 0 1 2 3 4
tP, PULSE WIDTH t, TIME (ms)

Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform

160
TYPICAL PROTECTION CIRCUIT
PEAK POWER OR CURRENT @ TA = 25° C

140
PEAK PULSE DERATING IN % OF

Zin
120

100

80 Vin LOAD VL
60

40

20

0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)

Figure 3. Pulse Derating Curve

C, CAPACITANCE (pF)

10,000

MEASURED @
ZERO BIAS
1000

MEASURED @ VRWM
100

10
0.1 1 10 100 1000
VBR, BREAKDOWN VOLTAGE (VOLTS)

Figure 4. Capacitance versus Breakdown

Voltage

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114
 P6SMB6.8AT3 Series

APPLICATION NOTES

RESPONSE TIME minimum lead lengths and placing the suppressor device as
In most applications, the transient suppressor device is close as possible to the equipment or components to be
placed in parallel with the equipment or component to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitive operation.
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the DUTY CYCLE DERATING
transition from the operating voltage to the clamp voltage as The data of Figure 1 applies for non-repetitive conditions
shown in Figure 5. and at a lead temperature of 25°C. If the duty cycle increases,
The inductive effects in the device are due to actual the peak power must be reduced as indicated by the curves
turn-on time (time required for the device to go from zero of Figure 7. Average power must be derated as the lead or
current to full current) and lead inductance. This inductive ambient temperature rises above 25°C. The average power
effect produces an overshoot in the voltage across the derating curve normally given on data sheets may be
equipment or component being protected as shown in normalized and used for this purpose.
Figure 6. Minimizing this overshoot is very important in the At first glance the derating curves of Figure 7 appear to be
application, since the main purpose for adding a transient in error as the 10 ms pulse has a higher derating factor than
suppressor is to clamp voltage spikes. The SMB series have the 10 µs pulse. However, when the derating factor for a
a very good response time, typically < 1 ns and negligible given pulse of Figure 7 is multiplied by the peak power value
inductance. However, external inductive effects could of Figure 1 for the same pulse, the results follow the
produce unacceptable overshoot. Proper circuit layout, expected trend.

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115
 P6SMB6.8AT3 Series

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 5. Figure 6.

1
0.7
0.5
DERATING FACTOR

0.3
0.2
PULSE WIDTH
0.1 10 ms
0.07
0.05
1 ms
0.03
0.02 100 µs
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)

Figure 7. Typical Derating Factor for Duty Cycle

UL RECOGNITION

The entire series has Underwriters Laboratory including Strike Voltage Breakdown test, Endurance
Recognition for the classification of protectors (QVGV2) Conditioning, Temperature test, Dielectric
under the UL standard for safety 497B and File #116110. Voltage-Withstand test, Discharge test and several more.
Many competitors only have one or two devices recognized Whereas, some competitors have only passed a
or have recognition in a non-protective category. Some flammability test for the package material, we have been
competitors have no recognition at all. With the UL497B recognized for much more to be included in their Protector
recognition, our parts successfully passed several tests category.

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116
1SMB10CAT3 Series

600 Watt Peak Power Zener

Transient Voltage Suppressors
Bidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener http://onsemi.com
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable PLASTIC SURFACE MOUNT
Surmetic package and is ideally suited for use in communication ZENER OVERVOLTAGE
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
TRANSIENT SUPPRESSORS
industrial/consumer applications. 10–78 VOLTS
Specification Features: 600 WATT PEAK POWER
• Working Peak Reverse Voltage Range – 10 V to 78 V
• Standard Zener Breakdown Voltage Range – 11.7 V to 91.3 V
• Peak Power – 600 Watts @ 1 ms
• ESD Rating of Class 3 (> 16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
SMB
Mechanical Characteristics: CASE 403A
CASE: Void-free, transfer-molded, thermosetting plastic PLASTIC
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable MARKING DIAGRAM
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
YWW
LEADS: Modified L–Bend providing more contact area to bond pads xxC
POLARITY: Polarity band will not be indicated
MOUNTING POSITION: Any
Y = Year
MAXIMUM RATINGS WW = Work Week
xxC = Specific Device Code
Rating Symbol Value Unit = (See Table Next Page)
Peak Power Dissipation (Note 1.) PPK 600 W
@ TL = 25°C, Pulse Width = 1 ms

DC Power Dissipation @ TL = 75°C PD 3.0 W ORDERING INFORMATION

Measured Zero Lead Length (Note 2.)
Derate Above 75°C 40 mW/°C Device
Package Shipping
Thermal Resistance from Junction to Lead RJL 25 °C/W
1SMBxxCAT3 SMB 2500/Tape & Reel
DC Power Dissipation (Note 3.) @ TA = 25°C PD 0.55 W
Derate Above 25°C
Thermal Resistance from Junction 4.4 mW/°C Devices listed in bold, italic are ON Semiconductor
to Ambient RJA 226 °C/W Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Operating and Storage TJ, Tstg –65 to °C
Temperature Range +150 †The “T3” suffix refers to a 13 inch reel.
1. 10 X 1000 s, non–repetitive
2. 1″ square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403A case outline dimensions spec.
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices.

 Semiconductor Components Industries, LLC, 2001 117 Publication Order Number:

May, 2001 – Rev. 4 1SMB10CAT3/D
 1SMB10CAT3 Series

ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted) IPP
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
IT
VC Clamping Voltage @ IPP VC VBR VRWM IR
V
VRWM Working Peak Reverse Voltage IR VRWM VBR VC
IT
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IPP
IT Test Current
Bi–Directional TVS

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage VC @ IPP (Note 6.)
VRWM
(Note 4.) IR @ VRWM VBR (Note 5.) Volts @ IT VC IPP
Device
Device Marking Volts µA Min Nom Max mA Volts Amps
1SMB10CAT3 KXC 10 5.0 11.1 11.69 12.27 1.0 17.0 35.3
1SMB11CAT3 KZC 11 5.0 12.2 12.84 13.5 1.0 18.2 33.0
1SMB12CAT3 LEC 12 5.0 13.3 14.00 14.7 1.0 19.9 30.2
1SMB13CAT3 LGC 13 5.0 14.4 15.16 15.9 1.0 21.5 27.9
1SMB14CAT3 LKC 14 5.0 15.6 16.42 17.2 1.0 23.2 25.8
1SMB15CAT3 LMC 15 5.0 16.7 17.58 18.5 1.0 24.4 24.0
1SMB16CAT3 LPC 16 5.0 17.8 18.74 19.7 1.0 26.0 23.1
1SMB17CAT3 LRC 17 5.0 18.9 19.90 20.9 1.0 27.6 21.7
1SMB18CAT3 LTC 18 5.0 20.0 21.06 22.1 1.0 29.2 20.5
1SMB20CAT3 LVC 20 5.0 22.2 23.37 24.5 1.0 32.4 18.5
1SMB22CAT3 LXC 22 5.0 24.4 25.69 27.0 1.0 35.5 16.9
1SMB24CAT3 LZC 24 5.0 26.7 28.11 29.5 1.0 38.9 15.4
1SMB26CAT3 MEC 26 5.0 28.9 30.42 31.9 1.0 42.1 14.2
1SMB28CAT3 MGC 28 5.0 31.1 32.74 34.4 1.0 45.4 13.2
1SMB30CAT3 MKC 30 5.0 33.3 35.06 36.8 1.0 48.4 12.4
1SMB33CAT3 MMC 33 5.0 36.7 38.63 40.6 1.0 53.3 11.3
1SMB36CAT3 MPC 36 5.0 40.0 42.11 44.2 1.0 58.1 10.3
1SMB40CAT3 MRC 40 5.0 44.4 46.74 49.1 1.0 64.5 9.3
1SMB43CAT3 MTC 43 5.0 47.8 50.32 52.8 1.0 69.4 8.6
1SMB45CAT3 MVC 45 5.0 50.0 52.63 55.3 1.0 72.2 8.3
1SMB48CAT3 MXC 48 5.0 53.3 56.11 58.9 1.0 77.4 7.7
1SMB51CAT3 MZC 51 5.0 56.7 59.69 62.7 1.0 82.4 7.3
1SMB54CAT3 NEC 54 5.0 60.0 63.16 66.32 1.0 87.1 6.9
1SMB58CAT3 NGC 58 5.0 64.4 67.79 71.18 1.0 93.6 6.4
1SMB60CAT3 NKC 60 5.0 66.7 70.21 73.72 1.0 96.8 6.2
1SMB64CAT3 NMC 64 5.0 71.1 74.84 78.58 1.0 103 5.8
1SMB70CAT3 NPC 70 5.0 77.8 81.90 85.99 1.0 113 5.3
1SMB75CAT3 NRC 75 5.0 83.3 91.65 92.07 1.0 121 4.9
1SMB78CAT3 NTC 78 5.0 86.7 91.26 95.83 1.0 126 4.7
4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25°C.
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data – 600 Watt at the beginning of this group.

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118
 1SMB10CAT3 Series

100
PULSE WIDTH (tP) IS DEFINED
NONREPETITIVE AS THAT POINT WHERE THE PEAK
tr≤ 10 µs
PULSE WAVEFORM CURRENT DECAYS TO 50% OF IPP.
PPK, PEAK POWER (kW)

SHOWN IN FIGURE 2
100
10 PEAK VALUE - IPP

VALUE (%)
IPP
HALF VALUE -
2
1 50

tP

0.1 0
0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms 0 1 2 3 4
tP, PULSE WIDTH t, TIME (ms)

Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform

160
TYPICAL PROTECTION CIRCUIT
PEAK POWER OR CURRENT @ TA = 25° C

140
PEAK PULSE DERATING IN % OF

Zin
120

100

80 Vin LOAD VL
60

40

20

0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)

Figure 3. Pulse Derating Curve

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119
 1SMB10CAT3 Series

APPLICATION NOTES

RESPONSE TIME minimum lead lengths and placing the suppressor device as
In most applications, the transient suppressor device is close as possible to the equipment or components to be
placed in parallel with the equipment or component to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitive operation.
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the DUTY CYCLE DERATING
transition from the operating voltage to the clamp voltage as The data of Figure 1 applies for non-repetitive conditions
shown in Figure 4. and at a lead temperature of 25°C. If the duty cycle increases,
The inductive effects in the device are due to actual the peak power must be reduced as indicated by the curves
turn-on time (time required for the device to go from zero of Figure 6. Average power must be derated as the lead or
current to full current) and lead inductance. This inductive ambient temperature rises above 25°C. The average power
effect produces an overshoot in the voltage across the derating curve normally given on data sheets may be
equipment or component being protected as shown in normalized and used for this purpose.
Figure 5. Minimizing this overshoot is very important in the At first glance the derating curves of Figure 6 appear to be
application, since the main purpose for adding a transient in error as the 10 ms pulse has a higher derating factor than
suppressor is to clamp voltage spikes. The SMB series have the 10 µs pulse. However, when the derating factor for a
a very good response time, typically < 1 ns and negligible given pulse of Figure 6 is multiplied by the peak power value
inductance. However, external inductive effects could of Figure 1 for the same pulse, the results follow the
produce unacceptable overshoot. Proper circuit layout, expected trend.

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 1SMB10CAT3 Series

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 4. Figure 5.

1
0.7
0.5
DERATING FACTOR

0.3
0.2
PULSE WIDTH
0.1 10 ms
0.07
0.05
1 ms
0.03
0.02 100 µs
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)

Figure 6. Typical Derating Factor for Duty Cycle

UL RECOGNITION

The entire series has Underwriters Laboratory including Strike Voltage Breakdown test, Endurance
Recognition for the classification of protectors (QVGV2) Conditioning, Temperature test, Dielectric
under the UL standard for safety 497B and File #116110. Voltage-Withstand test, Discharge test and several more.
Many competitors only have one or two devices recognized Whereas, some competitors have only passed a
or have recognition in a non-protective category. Some flammability test for the package material, we have been
competitors have no recognition at all. With the UL497B recognized for much more to be included in their Protector
recognition, our parts successfully passed several tests category.

http://onsemi.com
121
P6SMB11CAT3 Series

600 Watt Peak Power Zener

Transient Voltage Suppressors
Bidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener http://onsemi.com
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable PLASTIC SURFACE MOUNT
Surmetic package and is ideally suited for use in communication ZENER OVERVOLTAGE
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
TRANSIENT SUPPRESSORS
industrial/consumer applications. 9.4–78 VOLTS
Specification Features: 600 WATT PEAK POWER
• Working Peak Reverse Voltage Range – 9.4 to 77.8 V
• Standard Zener Breakdown Voltage Range – 11 to 91 V
• Peak Power – 600 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
Mechanical Characteristics: SMB
CASE 403A
CASE: Void-free, transfer-molded, thermosetting plastic PLASTIC
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM
260°C for 10 Seconds
LEADS: Modified L–Bend providing more contact area to bond pads YWW
POLARITY: Polarity band will not be indicated xxC
MOUNTING POSITION: Any
Y = Year
MAXIMUM RATINGS WW = Work Week
Rating Symbol Value Unit xxC = Specific Device Code
= (See Table Next Page)
Peak Power Dissipation (Note 1.) PPK 600 W
@ TL = 25°C, Pulse Width = 1 ms

DC Power Dissipation @ TL = 75°C PD 3.0 W

ORDERING INFORMATION
Measured Zero Lead Length (Note 2.)
Derate Above 75°C 40 mW/°C Device
Package Shipping
Thermal Resistance from Junction to Lead RJL 25 °C/W
P6SMBxxCAT3 SMB 2500/Tape & Reel
DC Power Dissipation (Note 3.) @ TA = 25°C PD 0.55 W
Derate Above 25°C
Thermal Resistance from Junction 4.4 mW/°C
to Ambient RJA 226 °C/W Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
Operating and Storage TJ, Tstg –65 to °C choices for future use and best overall value.
Temperature Range +150
†The “T3” suffix refers to a 13 inch reel.
1. 10 X 1000 s, non–repetitive
2. 1″ square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403A case outline dimensions spec.
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.

 Semiconductor Components Industries, LLC, 2001 122 Publication Order Number:

May, 2001 – Rev. 4 P6SMB11CAT3/D
 P6SMB11CAT3 Series

ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted) IPP
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
IT
VC Clamping Voltage @ IPP VC VBR VRWM IR
V
IR V
VRWM Working Peak Reverse Voltage IT RWM VBR VC

IR Maximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT
IPP
IT Test Current
VBR Maximum Temperature Coefficient of VBR Bi–Directional TVS

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage VC @ IPP (Note 6.)
VRWM
(Note 4.) IR @ VRWM VBR Volts (Note 5.) @ IT VC IPP VBR
Device
Device Marking Volts µA Min Nom Max mA Volts Amps %/°C
P6SMB11CAT3 11C 9.4 5 10.5 11.05 11.6 1 15.6 38 0.075
P6SMB12CAT3 12C 10.2 5 11.4 12 12.6 1 16.7 36 0.078
P6SMB13CAT3 13C 11.1 5 12.4 13.05 13.7 1 18.2 33 0.081
P6SMB15CAT3 15C 12.8 5 14.3 15.05 15.8 1 21.2 28 0.084
P6SMB16CAT3 16C 13.6 5 15.2 16 16.8 1 22.5 27 0.086
P6SMB18CAT3 18C 15.3 5 17.1 18 18.9 1 25.2 24 0.088
P6SMB20CAT3 20C 17.1 5 19 20 21 1 27.7 22 0.09
P6SMB22CAT3 22C 18.8 5 20.9 22 23.1 1 30.6 20 0.09
P6SMB24CAT3 24C 20.5 5 22.8 24 25.2 1 33.2 18 0.094
P6SMB27CAT3 27C 23.1 5 25.7 27.05 28.4 1 37.5 16 0.096
P6SMB30CAT3 30C 25.6 5 28.5 30 31.5 1 41.4 14.4 0.097
P6SMB33CAT3 33C 28.2 5 31.4 33.05 34.7 1 45.7 13.2 0.098
P6SMB36CAT3 36C 30.8 5 34.2 36 37.8 1 49.9 12 0.099
P6SMB39CAT3 39C 33.3 5 37.1 39.05 41 1 53.9 11.2 0.1
P6SMB43CAT3 43C 36.8 5 40.9 43.05 45.2 1 59.3 10.1 0.101
P6SMB47CAT3 47C 40.2 5 44.7 47.05 49.4 1 64.8 9.3 0.101
P6SMB51CAT3 51C 43.6 5 48.5 51.05 53.6 1 70.1 8.6 0.102
P6SMB56CAT3 56C 47.8 5 53.2 56 58.8 1 77 7.8 0.103
P6SMB62CAT3 62C 53 5 58.9 62 65.1 1 85 7.1 0.104
P6SMB68CAT3 68C 58.1 5 64.6 68 71.4 1 92 6.5 0.104
P6SMB75CAT3 75C 64.1 5 71.3 75.05 78.8 1 103 5.8 0.105
P6SMB82CAT3 82C 70.1 5 77.9 82 86.1 1 113 5.3 0.105
P6SMB91CAT3 91C 77.8 5 86.5 91 95.5 1 125 4.8 0.106
4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25°C.
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data – 600 Watt at the beginning of this group.

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 P6SMB11CAT3 Series

100
PULSE WIDTH (tP) IS DEFINED AS
NONREPETITIVE THAT POINT WHERE THE PEAK
tr≤ 10 µs
PULSE WAVEFORM CURRENT DECAYS TO 50% OF IPP.
SHOWN IN FIGURE 2
PP, PEAK POWER (kW)

100
10 PEAK VALUE - IPP

VALUE (%)
IPP
HALF VALUE -
2
1 50

tP

0.1 0
0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms 0 1 2 3 4
tP, PULSE WIDTH t, TIME (ms)

Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform

160
TYPICAL PROTECTION CIRCUIT
PEAK POWER OR CURRENT @ TA = 25° C

140
PEAK PULSE DERATING IN % OF

Zin
120

100

80 Vin LOAD VL
60

40

20

0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)

Figure 3. Pulse Derating Curve

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 P6SMB11CAT3 Series

APPLICATION NOTES

RESPONSE TIME minimum lead lengths and placing the suppressor device as
In most applications, the transient suppressor device is close as possible to the equipment or components to be
placed in parallel with the equipment or component to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitive operation.
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the DUTY CYCLE DERATING
transition from the operating voltage to the clamp voltage as The data of Figure 1 applies for non-repetitive conditions
shown in Figure 4. and at a lead temperature of 25°C. If the duty cycle increases,
The inductive effects in the device are due to actual the peak power must be reduced as indicated by the curves
turn-on time (time required for the device to go from zero of Figure 6. Average power must be derated as the lead or
current to full current) and lead inductance. This inductive ambient temperature rises above 25°C. The average power
effect produces an overshoot in the voltage across the derating curve normally given on data sheets may be
equipment or component being protected as shown in normalized and used for this purpose.
Figure 5. Minimizing this overshoot is very important in the At first glance the derating curves of Figure 6 appear to be
application, since the main purpose for adding a transient in error as the 10 ms pulse has a higher derating factor than
suppressor is to clamp voltage spikes. The SMB series have the 10 µs pulse. However, when the derating factor for a
a very good response time, typically < 1 ns and negligible given pulse of Figure 6 is multiplied by the peak power value
inductance. However, external inductive effects could of Figure 1 for the same pulse, the results follow the
produce unacceptable overshoot. Proper circuit layout, expected trend.

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 P6SMB11CAT3 Series

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 4. Figure 5.

1
0.7
0.5
DERATING FACTOR

0.3
0.2
PULSE WIDTH
0.1 10 ms
0.07
0.05
1 ms
0.03
0.02 100 µs
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)

Figure 6. Typical Derating Factor for Duty Cycle

UL RECOGNITION

The entire series has Underwriters Laboratory including Strike Voltage Breakdown test, Endurance
Recognition for the classification of protectors (QVGV2) Conditioning, Temperature test, Dielectric
under the UL standard for safety 497B and File #116110. Voltage-Withstand test, Discharge test and several more.
Many competitors only have one or two devices recognized Whereas, some competitors have only passed a
or have recognition in a non-protective category. Some flammability test for the package material, we have been
competitors have no recognition at all. With the UL497B recognized for much more to be included in their Protector
recognition, our parts successfully passed several tests category.

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126
1SMC5.0AT3 Series

1500 Watt Peak Power Zener

Transient Voltage Suppressors
Unidirectional*
The SMC series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener http://onsemi.com
impedance and fast response time. The SMC series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable PLASTIC SURFACE MOUNT
Surmetic package and is ideally suited for use in communication ZENER TRANSIENT
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
VOLTAGE SUPPRESSORS
industrial/consumer applications. 5.0–78 VOLTS
Specification Features: 1500 WATT PEAK POWER
• Working Peak Reverse Voltage Range – 5.0 V to 78 V
• Standard Zener Breakdown Voltage Range – 6.7 V to 91.25 V
• Peak Power – 1500 Watts @ 1 ms
Cathode Anode
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Maximum Temperature Coefficient Specified
• Response Time is Typically < 1 ns SMC
CASE 403
Mechanical Characteristics: PLASTIC
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable MARKING DIAGRAM
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds YWW
Gxx
LEADS: Modified L–Bend providing more contact area to bond pads
POLARITY: Cathode indicated by molded polarity notch
MOUNTING POSITION: Any Y = Year
WW = Work Week
Gxx = Specific Device Code
MAXIMUM RATINGS = (See Table on Page
129)
Please See the Table on the Following Page

ORDERING INFORMATION

Device
Package Shipping

1SMCxxxAT3 SMC 2500/Tape & Reel

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

*Bidirectional devices will not be available in this

series.
†The “T3” suffix refers to a 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 127 Publication Order Number:

May, 2001 – Rev. 3 1SMC5.0AT3/D
 1SMC5.0AT3 Series

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms PPK 1500 W
DC Power Dissipation @ TL = 75°C PD 4.0 W
Measured Zero Lead Length (Note 2.)
Derate Above 75°C 54.6 mW/°C
Thermal Resistance from Junction to Lead RJL 18.3 °C/W
DC Power Dissipation (Note 3.) @ TA = 25°C PD 0.75 W
Derate Above 25°C 6.1 mW/°C
Thermal Resistance from Junction to Ambient RJA 165 °C/W
Forward Surge Current (Note 4.) @ TA = 25°C IFSM 200 A
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
1. 10 X 1000 s, non–repetitive
2. 1″ square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 3.5 V Max @ IF = 100 A) (Note 5.)
IF
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage VC VBR VRWM
V
IR VF
IR Maximum Reverse Leakage Current @ VRWM IT
VBR Breakdown Voltage @ IT
IT Test Current
IF Forward Current IPP
VF Forward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms Uni–Directional TVS
non–repetitive duty cycle

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 1SMC5.0AT3 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Breakdown Voltage VC @ IPP (Note 8.)
VRWM
(Note 6.) IR @ VRWM VBR Volts (Note 7.) @ IT VC IPP
Device
Device Marking Volts µA Min Nom Max mA Volts Amps
1SMC5.0AT3 GDE 5.0 1000 6.4 6.7 7.0 10 9.2 163
1SMC6.0AT3 GDG 6.0 1000 6.67 7.02 7.37 10 10.3 145.6
1SMC6.5AT3 GDK 6.5 500 7.22 7.6 7.98 10 11.2 133.9
1SMC7.0AT3 GDM 7.0 200 7.78 8.19 8.6 10 12 125
1SMC7.5AT3 GDP 7.5 100 8.33 8.77 9.21 1 12.9 116.3
1SMC8.0AT3 GDR 8.0 50 8.89 9.36 9.83 1 13.6 110.3
1SMC8.5AT3 GDT 8.5 25 9.44 9.92 10.4 1 14.4 104.2
1SMC9.0AT3 GDV 9.0 10 10 10.55 11.1 1 15.4 97.4
1SMC10AT3 GDX 10 5 11.1 11.7 12.3 1 17 88.2
1SMC11AT3 GDZ 11 5 12.2 12.85 13.5 1 18.2 82.4
1SMC12AT3 GEE 12 5 13.3 14 14.7 1 19.9 75.3
1SMC13AT3 GEG 13 5 14.4 15.15 15.9 1 21.5 69.7
1SMC14AT3 GEK 14 5 15.6 16.4 17.2 1 23.2 64.7
1SMC15AT3 GEM 15 5 16.7 17.6 18.5 1 24.4 61.5
1SMC16AT3 GEP 16 5 17.8 18.75 19.7 1 26 57.7
1SMC17AT3 GER 17 5 18.9 19.9 20.9 1 27.6 53.3
1SMC18AT3 GET 18 5 20 21.05 22.1 1 29.2 51.4
1SMC20AT3 GEV 20 5 22.2 23.35 24.5 1 32.4 46.3
1SMC22AT3 GEX 22 5 24.4 25.65 26.9 1 35.5 42.2
1SMC24AT3 GEZ 24 5 26.7 28.1 29.5 1 38.9 38.6
1SMC26AT3 GFE 26 5 28.9 30.4 31.9 1 42.1 35.6
1SMC28AT3 GFG 28 5 31.1 32.75 34.4 1 45.4 33
1SMC30AT3 GFK 30 5 33.3 35.05 36.8 1 48.4 31
1SMC33AT3 GFM 33 5 36.7 38.65 40.6 1 53.3 28.1
1SMC36AT3 GFP 36 5 40 42.1 44.2 1 58.1 25.8
1SMC40AT3 GFR 40 5 44.4 46.75 49.1 1 64.5 32.2
1SMC43AT3 GFT 43 5 47.8 50.3 52.8 1 69.4 21.6
1SMC45AT3 GFV 45 5 50 52.65 55.3 1 72.2 20.6
1SMC48AT3 GFX 48 5 53.3 56.1 58.9 1 77.4 19.4
1SMC51AT3 GFZ 51 5 56.7 59.7 62.7 1 82.4 18.2
1SMC54AT3 GGE 54 5 60 63.15 66.3 1 87.1 17.2
1SMC58AT3 GGG 58 5 64.4 67.8 71.2 1 93.6 16
1SMC60AT3 GGK 60 5 66.7 70.2 73.7 1 96.8 15.5
1SMC64AT3 GGM 64 5 71.1 74.85 78.6 1 103 14.6
1SMC70AT3 GGP 70 5 77.8 81.9 86 1 113 13.3
1SMC75AT3 GGR 75 5 83.3 87.7 92.1 1 121 12.4
1SMC78AT3 GGT 78 5 86.7 91.25 95.8 1 126 11.4
6. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data – 1500 Watt at the beginning of this group.

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 1SMC5.0AT3 Series

100
PULSE WIDTH (tP) IS DEFINED
NONREPETITIVE AS THAT POINT WHERE THE PEAK
tr≤ 10 µs
PULSE WAVEFORM CURRENT DECAYS TO 50%
Ppk, PEAK POWER (kW)

SHOWN IN FIGURE 2 OF IPP.

100
PEAK VALUE - IPP

VALUE (%)
10
IPP
HALF VALUE -
2
50

tP

1 0
0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms 0 1 2 3 4
tP, PULSE WIDTH t, TIME (ms)

Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform

160
1000
PEAK POWER OR CURRENT @ TA = 25° C

140 TL=25°C VBR(NOM)=6.8TO13V

500
PEAK PULSE DERATING IN % OF

tP=10µs 20V

IT, TEST CURRENT (AMPS)

120 24V 43V
200 75V
100 100
120V
80 50
180V
60 20
10
40
5
20
2
0 1
0 25 50 75 100 125 150 0.3 0.5 0.7 1 2 3 5 7 10 20 30
TA, AMBIENT TEMPERATURE (°C) ∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR (NOM) (VOLTS)

Figure 3. Pulse Derating Curve Figure 4. Dynamic Impedance

UL RECOGNITION

The entire series has Underwriters Laboratory including Strike Voltage Breakdown test, Endurance
Recognition for the classification of protectors (QVGV2) Conditioning, Temperature test, Dielectric Voltage-Withstand
under the UL standard for safety 497B and File #116110. test, Discharge test and several more.
Many competitors only have one or two devices recognized Whereas, some competitors have only passed a
or have recognition in a non-protective category. Some flammability test for the package material, we have been
competitors have no recognition at all. With the UL497B recognized for much more to be included in their Protector
recognition, our parts successfully passed several tests category.

http://onsemi.com
130
 1SMC5.0AT3 Series

APPLICATION NOTES

RESPONSE TIME minimum lead lengths and placing the suppressor device as
In most applications, the transient suppressor device is close as possible to the equipment or components to be
placed in parallel with the equipment or component to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitive operation.
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the DUTY CYCLE DERATING
transition from the operating voltage to the clamp voltage as The data of Figure 1 applies for non-repetitive conditions
shown in Figure 5. and at a lead temperature of 25°C. If the duty cycle increases,
The inductive effects in the device are due to actual the peak power must be reduced as indicated by the curves
turn-on time (time required for the device to go from zero of Figure 7. Average power must be derated as the lead or
current to full current) and lead inductance. This inductive ambient temperature rises above 25°C. The average power
effect produces an overshoot in the voltage across the derating curve normally given on data sheets may be
equipment or component being protected as shown in normalized and used for this purpose.
Figure 6. Minimizing this overshoot is very important in the At first glance the derating curves of Figure 7 appear to be
application, since the main purpose for adding a transient in error as the 10 ms pulse has a higher derating factor than
suppressor is to clamp voltage spikes. The SMC series have the 10 µs pulse. However, when the derating factor for a
a very good response time, typically < 1 ns and negligible given pulse of Figure 7 is multiplied by the peak power value
inductance. However, external inductive effects could of Figure 1 for the same pulse, the results follow the
produce unacceptable overshoot. Proper circuit layout, expected trend.

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 1SMC5.0AT3 Series

TYPICAL PROTECTION CIRCUIT

Zin

Vin LOAD VL

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 5. Figure 6.

1
0.7
0.5
DERATING FACTOR

0.3
0.2
PULSE WIDTH
0.1 10 ms
0.07
0.05
1 ms
0.03
0.02 100 µs
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)

Figure 7. Typical Derating Factor for Duty Cycle

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1.5SMC6.8AT3 Series

1500 Watt Peak Power Zener

Transient Voltage Suppressors
Unidirectional*
The SMC series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener http://onsemi.com
impedance and fast response time. The SMC series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable PLASTIC SURFACE MOUNT
Surmetic package and is ideally suited for use in communication ZENER OVERVOLTAGE
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
TRANSIENT SUPPRESSORS
industrial/consumer applications. 5.8–78 VOLTS
Specification Features: 1500 WATT PEAK POWER
• Working Peak Reverse Voltage Range – 5.8 to 77.8 V
• Standard Zener Breakdown Voltage Range – 6.8 to 91 V
• Peak Power – 1500 Watts @ 1 ms
Cathode Anode
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Maximum Temperature Coefficient Specified
• Response Time is Typically < 1 ns SMC
CASE 403
Mechanical Characteristics: PLASTIC
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable MARKING DIAGRAM
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds YWW
xxxA
LEADS: Modified L–Bend providing more contact area to bond pads
POLARITY: Cathode indicated by molded polarity notch
MOUNTING POSITION: Any Y = Year
WW = Work Week
xxxA = Specific Device Code
MAXIMUM RATINGS = (See Table on Page
135)
Please See the Table on the Following Page

ORDERING INFORMATION

Device
Package Shipping

1.5SMCxxxAT3 SMC 2500/Tape & Reel

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

*Bidirectional devices will not be available in this

series.
†The “T3” suffix refers to a 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 133 Publication Order Number:

May, 2001 – Rev. 4 1.5SMC6.8AT3/D
 1.5SMC6.8AT3 Series

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.) @ TL = 25°C, Pulse Width = 1 ms PPK 1500 W
DC Power Dissipation @ TL = 75°C PD 4.0 W
Measured Zero Lead Length (Note 2.)
Derate Above 75°C 54.6 mW/°C
Thermal Resistance from Junction to Lead RJL 18.3 °C/W
DC Power Dissipation (Note 3.) @ TA = 25°C PD 0.75 W
Derate Above 25°C 6.1 mW/°C
Thermal Resistance from Junction to Ambient RJA 165 °C/W
Forward Surge Current (Note 4.) @ TA = 25°C IFSM 200 A
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
1. 10 X 1000 s, non–repetitive
2. 1″ square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 3.5 V Max. @ IF (Note ) = 100 A)
IF
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage VC VBR VRWM
V
IR VF
IR Maximum Reverse Leakage Current @ VRWM IT
VBR Breakdown Voltage @ IT
IT Test Current
VBR Maximum Temperature Coefficient of VBR IPP
IF Forward Current
VF Forward Voltage @ IF Uni–Directional TVS
5. 1/2 sine wave or equivalent, PW = 8.3 ms
non–repetitive duty cycle

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 1.5SMC6.8AT3 Series

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage VC @ IPP (Note 8.)
VRWM
(Note 6.) IR @ VRWM VBR Volts (Note 7.) @ IT VC IPP VBR
Device
Device Marking Volts µA Min Nom Max mA Volts Amps %/°C
1.5SMC6.8AT3 6V8A 5.8 1000 6.45 6.8 7.14 10 10.5 143 0.057
1.5SMC7.5AT3 7V5A 6.4 500 7.13 7.5 7.88 10 11.3 132 0.061
1.5SMC8.2AT3 8V2A 7.02 200 7.79 8.2 8.61 10 12.1 124 0.065
1.5SMC9.1AT3 9V1A 7.78 50 8.65 9.1 9.55 1 13.4 112 0.068
1.5SMC10AT3 10A 8.55 10 9.5 10 10.5 1 14.5 103 0.073
1.5SMC11AT3 11A 9.4 5 10.5 11 11.6 1 15.6 96 0.075
1.5SMC12AT3 12A 10.2 5 11.4 12 12.6 1 16.7 90 0.078
1.5SMC13AT3 13A 11.1 5 12.4 13 13.7 1 18.2 82 0.081
1.5SMC15AT3 15A 12.8 5 14.3 15 15.8 1 21.2 71 0.084
1.5SMC16AT3 16A 13.6 5 15.2 16 16.8 1 22.5 67 0.086
1.5SMC18AT3 18A 15.3 5 17.1 18 18.9 1 25.2 59.5 0.088
1.5SMC20AT3 20A 17.1 5 19 20 21 1 27.7 54 0.09
1.5SMC22AT3 22A 18.8 5 20.9 22 23.1 1 30.6 49 0.092
1.5SMC24AT3 24A 20.5 5 22.8 24 25.2 1 33.2 45 0.094
1.5SMC27AT3 27A 23.1 5 25.7 27 28.4 1 37.5 40 0.096
1.5SMC30AT3 30A 25.6 5 28.5 30 31.5 1 41.4 36 0.097
1.5SMC33AT3 33A 28.2 5 31.4 33 34.7 1 45.7 33 0.098
1.5SMC36AT3 36A 30.8 5 34.2 36 37.8 1 49.9 30 0.099
1.5SMC39AT3 39A 33.3 5 37.1 39 41 1 53.9 28 0.1
1.5SMC43AT3 43A 36.8 5 40.9 43 45.2 1 59.3 25.3 0.101
1.5SMC47AT3 47A 40.2 5 44.7 47 49.4 1 64.8 23.2 0.101
1.5SMC51AT3 51A 43.6 5 48.5 51 53.6 1 70.1 21.4 0.102
1.5SMC56AT3 56A 47.8 5 53.2 56 58.8 1 77 19.5 0.103
1.5SMC62AT3 62A 53 5 58.9 62 65.1 1 85 17.7 0.104
1.5SMC68AT3 68A 58.1 5 64.6 68 71.4 1 92 16.3 0.104
1.5SMC75AT3 75A 64.1 5 71.3 75 78.8 1 103 14.6 0.105
1.5SMC82AT3 82A 70.1 5 77.9 82 86.1 1 113 13.3 0.105
1.5SMC91AT3 91A 77.8 5 86.5 91 95.5 1 125 12 0.106
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data – 1500 Watt at the beginning of this group.

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135
 1.5SMC6.8AT3 Series

100
PULSE WIDTH (tP) IS DEFINED
NONREPETITIVE AS THAT POINT WHERE THE PEAK
tr≤ 10 µs
PULSE WAVEFORM CURRENT DECAYS TO 50%
Ppk, PEAK POWER (kW)

SHOWN IN FIGURE 2 OF IPP.

100
PEAK VALUE - IPP

VALUE (%)
10
IPP
HALF VALUE -
2
50

tP

1 0
0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms 0 1 2 3 4
tP, PULSE WIDTH t, TIME (ms)

Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform

160
1000
PEAK POWER OR CURRENT @ TA = 25° C

140 TL=25°C VBR(NOM)=6.8TO13V

500
PEAK PULSE DERATING IN % OF

tP=10µs 20V

IT, TEST CURRENT (AMPS)

120 24V 43V
200 75V
100 100
120V
80 50
180V
60 20
10
40
5
20
2
0 1
0 25 50 75 100 125 150 0.3 0.5 0.7 1 2 3 5 7 10 20 30
TA, AMBIENT TEMPERATURE (°C) ∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR (NOM) (VOLTS)

Figure 3. Pulse Derating Curve Figure 4. Dynamic Impedance

UL RECOGNITION

The entire series has Underwriters Laboratory including Strike Voltage Breakdown test, Endurance
Recognition for the classification of protectors (QVGV2) Conditioning, Temperature test, Dielectric Voltage-Withstand
under the UL standard for safety 497B and File #116110. test, Discharge test and several more.
Many competitors only have one or two devices recognized Whereas, some competitors have only passed a
or have recognition in a non-protective category. Some flammability test for the package material, we have been
competitors have no recognition at all. With the UL497B recognized for much more to be included in their Protector
recognition, our parts successfully passed several tests category.

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 1.5SMC6.8AT3 Series

APPLICATION NOTES

RESPONSE TIME minimum lead lengths and placing the suppressor device as
In most applications, the transient suppressor device is close as possible to the equipment or components to be
placed in parallel with the equipment or component to be protected will minimize this overshoot.
protected. In this situation, there is a time delay associated Some input impedance represented by Zin is essential to
with the capacitance of the device and an overshoot prevent overstress of the protection device. This impedance
condition associated with the inductance of the device and should be as high as possible, without restricting the circuit
the inductance of the connection method. The capacitive operation.
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the DUTY CYCLE DERATING
transition from the operating voltage to the clamp voltage as The data of Figure 1 applies for non-repetitive conditions
shown in Figure 5. and at a lead temperature of 25°C. If the duty cycle increases,
The inductive effects in the device are due to actual the peak power must be reduced as indicated by the curves
turn-on time (time required for the device to go from zero of Figure 7. Average power must be derated as the lead or
current to full current) and lead inductance. This inductive ambient temperature rises above 25°C. The average power
effect produces an overshoot in the voltage across the derating curve normally given on data sheets may be
equipment or component being protected as shown in normalized and used for this purpose.
Figure 6. Minimizing this overshoot is very important in the At first glance the derating curves of Figure 7 appear to be
application, since the main purpose for adding a transient in error as the 10 ms pulse has a higher derating factor than
suppressor is to clamp voltage spikes. The SMC series have the 10 µs pulse. However, when the derating factor for a
a very good response time, typically < 1 ns and negligible given pulse of Figure 7 is multiplied by the peak power value
inductance. However, external inductive effects could of Figure 1 for the same pulse, the results follow the
produce unacceptable overshoot. Proper circuit layout, expected trend.

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 1.5SMC6.8AT3 Series

TYPICAL PROTECTION CIRCUIT

Zin

Vin LOAD VL

Vin (TRANSIENT)
OVERSHOOT DUE TO
V Vin (TRANSIENT) V INDUCTIVE EFFECTS
VL

VL

Vin

td

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 5. Figure 6.

1
0.7
0.5
DERATING FACTOR

0.3
0.2
PULSE WIDTH
0.1 10 ms
0.07
0.05
1 ms
0.03
0.02 100 µs
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)

Figure 7. Typical Derating Factor for Duty Cycle

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138
 CHAPTER 5
Transient Voltage Suppressor Arrays –
Surface Mounted Data Sheets

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139
MMBZ5V6ALT1 Series
Preferred Devices

24 and 40 Watt Peak Power

Zener Transient Voltage
Suppressors
SOT–23 Dual Common Anode Zeners
http://onsemi.com
for ESD Protection
These dual monolithic silicon zener diodes are designed for 1
PIN 1. CATHODE
applications requiring transient overvoltage protection capability. They 2. CATHODE 3
are intended for use in voltage and ESD sensitive equipment such as 3. ANODE 2
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These MARKING
devices are ideal for situations where board space is at a premium. 3 DIAGRAM

Specification Features:
1
• SOT–23 Package Allows Either Two Separate Unidirectional 2

M
xxx
Configurations or a Single Bidirectional Configuration SOT–23
• Working Peak Reverse Voltage Range – 3 V to 26 V CASE 318
• Standard Zener Breakdown Voltage Range – 5.6 V to 33 V STYLE 12 xxx = Device Code
• Peak Power – 24 or 40 Watts @ 1.0 ms (Unidirectional), M = Date Code
per Figure 5. Waveform
• ESD Rating of Class N (exceeding 16 kV) per the Human ORDERING INFORMATION
Body Model
Device Package Shipping
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 µA MMBZ5V6ALT1 SOT–23 3000/Tape & Reel
• Flammability Rating UL 94V–O MMBZ6V2ALT1 SOT–23 3000/Tape & Reel
Mechanical Characteristics: MMBZ6V8ALT1 SOT–23 3000/Tape & Reel
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable MMBZ9V1ALT1 SOT–23 3000/Tape & Reel
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MMBZ10VALT1 SOT–23 3000/Tape & Reel
260°C for 10 Seconds
Package designed for optimal automated board assembly MMBZ12VALT1 SOT–23 3000/Tape & Reel
Small package size for high density applications
MMBZ15VALT1 SOT–23 3000/Tape & Reel
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel. MMBZ18VALT1 SOT–23 3000/Tape & Reel
Replace the “T1” with “T3” in the Device Number to order the MMBZ20VALT1 SOT–23 3000/Tape & Reel
13 inch/10,000 unit reel.
MMBZ27VALT1 SOT–23 3000/Tape & Reel

MMBZ33VALT1 SOT–23 3000/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

DEVICE MARKING INFORMATION

See specific marking information in the device marking
column of the table on page 142 of this data sheet.

 Semiconductor Components Industries, LLC, 2001 140 Publication Order Number:

March, 2001 – Rev. 5 MMBZ5V6ALT1/D
 MMBZ5V6ALT1 Series

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1.) MMBZ5V6ALT1 thru MMBZ10VALT1 Ppk 24 Watts
@ TL ≤ 25°C MMBZ12VALT1 thru MMBZ33VALT1 40

Total Power Dissipation on FR–5 Board (Note 2.) @ TA = 25°C °PD° 225 °mW°
Derate above 25°C 1.8 mW/°C

Thermal Resistance Junction to Ambient RθJA 556 °C/W

Total Power Dissipation on Alumina Substrate (Note 3.) @ TA = 25°C °PD° 300 °mW
Derate above 25°C 2.4 mW/°C

Thermal Resistance Junction to Ambient RθJA 417 °C/W

Junction and Storage Temperature Range TJ, Tstg – 55 to +150 °C
Lead Solder Temperature – Maximum (10 Second Duration) TL 260 °C

1. Non–repetitive current pulse per Figure 5. and derate above TA = 25°C per Figure 6.
2. FR–5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request

ELECTRICAL CHARACTERISTICS I
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) IF

Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP VC VBR VRWM
V
VRWM Working Peak Reverse Voltage IR VF
IT
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
IPP
VBR Maximum Temperature Coefficient of VBR
IF Forward Current Uni–Directional TVS
VF Forward Voltage @ IF
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK

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 MMBZ5V6ALT1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA) 24 WATTS
Max Zener VC @ IPP
Breakdown Voltage Impedance (Note 5.) (Note 6.)
IR @
Device VRWM VRWM VBR (Note 4.) (V) @ IT ZZT @ IZT ZZK @ IZK VC IPP VBR
Device Marking Volts A Min Nom Max mA Ω Ω mA V A mV/
C
MMBZ5V6ALT1 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26
MMBZ6V2ALT1 6A2 3.0 0.5 5.89 6.2 6.51 1.0 – – – 8.7 2.76 2.80
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage VC @ IPP (Note 6.)

Device VRWM IR @ VRWM VBR (Note 4.) (V) @ IT VC IPP VBR

Device Marking Volts A Min Nom Max mA V A mV/
C
MMBZ6V8ALT1 6A8 4.5 0.5 6.46 6.8 7.14 1.0 9.6 2.5 3.4
MMBZ9V1ALT1 9A1 6.0 0.3 8.65 9.1 9.56 1.0 14 1.7 7.5
MMBZ10VALT1 10A 6.5 0.3 9.50 10 10.5 1.0 14.2 1.7 7.5
(VF = 1.1 V Max @ IF = 200 mA) 40 WATTS
Breakdown Voltage VC @ IPP (Note 6.)

Device VRWM IR @ VRWM VBR (Note 4.) (V) @ IT VC IPP VBR

Device Marking Volts nA Min Nom Max mA V A mV/
C
MMBZ12VALT1 12A 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5
MMBZ15VALT1 15A 12 50 14.25 15 15.75 1.0 21 1.9 12.3
MMBZ18VALT1 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3
MMBZ20VALT1 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2
MMBZ27VALT1 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3
MMBZ33VALT1 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 5. and derate per Figure 6.

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 MMBZ5V6ALT1 Series

TYPICAL CHARACTERISTICS
18 1000
BREAKDOWN VOLTAGE (VOLTS)

15
100

12
10
(VBR @ I T )

IR (nA)
9
1
6

3 0.1

0 0.01
-
40 0 +
50 +
100 +
150 -
40 +
25 +
85 +
125
TEMPERATURE (°C) TEMPERATURE (°C)

Figure 1. Typical Breakdown Voltage Figure 2. Typical Leakage Current

versus Temperature versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)

320 300

280
250
PD , POWER DISSIPATION (mW)

240 ALUMINA SUBSTRATE

C, CAPACITANCE (pF)

200
200
5.6 V
160 150

120
15 V 100
80 FR-5 BOARD
50
40

0 0
0 1 2 3 0 25 50 75 100 125 150 175
BIAS (V) TEMPERATURE (°C)

Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Steady State Power Derating Curve
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)

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 MMBZ5V6ALT1 Series

TYPICAL CHARACTERISTICS
100

PEAK PULSE DERATING IN % OF PEAK POWER

PULSE WIDTH (tP) IS DEFINED
90
tr ≤ 10 s AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 80

OR CURRENT @ TA = 25 ° C
100 PEAK VALUE-IPP 50% OF IPP.
70
60
VALUE (%)

IPP
HALF VALUE- 50
2
40
50
30
tP 20
10
0 0
0 1 2 3 4 0 25 50 75 100 125 150 175 200
t, TIME (ms) TA, AMBIENT TEMPERATURE (°C)

Figure 5. Pulse Waveform Figure 6. Pulse Derating Curve

MMBZ5V6ALT1 MMBZ5V6ALT1
100 100
RECTANGULAR RECTANGULAR
WAVEFORM, TA = 25°C WAVEFORM, TA = 25°C
Ppk PEAK SURGE POWER (W)

Ppk PEAK SURGE POWER (W) BIDIRECTIONAL

BIDIRECTIONAL

10 10
UNIDIRECTIONAL
UNIDIRECTIONAL

1 1
0.1 1 10 100 1000 0.1 1 10 100 1000
PW, PULSE WIDTH (ms) UNIDIRECTIONAL PW, PULSE WIDTH (ms)

Figure 7. Maximum Non–repetitive Surge Figure 8. Maximum Non–repetitive Surge

Power, Ppk versus PW Power, Ppk(NOM) versus PW
Power is defined as VRSM x IZ(pk) where VRSM is Power is defined as VZ(NOM) x IZ(pk) where
the clamping voltage at IZ(pk). VZ(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.

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 MMBZ5V6ALT1 Series

TYPICAL COMMON ANODE APPLICATIONS

A quad junction common anode design in a SOT–23 when board space is at a premium. Two simplified examples
package protects four separate lines using only one package. of TVS applications are illustrated below.
This adds flexibility and creativity to PCB design especially

Computer Interface Protection

A
KEYBOARD B
TERMINAL FUNCTIONAL
I/O C
PRINTER DECODER
ETC. D

GND

MMBZ5V6ALT1
THRU
MMBZ33VALT1

Microprocessor Protection

VDD
VGG
ADDRESS BUS

RAM ROM

DATA BUS
CPU MMBZ5V6ALT1
I/O
THRU
CLOCK MMBZ33VALT1

CONTROL BUS

GND

MMBZ5V6ALT1
THRU
MMBZ33VALT1
SOLDERING PRECAUTIONS

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145
MMBZ15VDLT1,
MMBZ27VCLT1
Preferred Devices

40 Watt Peak Power

Zener Transient Voltage
Suppressors
http://onsemi.com
SOT–23 Dual Common Cathode Zeners
for ESD Protection
1
These dual monolithic silicon zener diodes are designed for 3
applications requiring transient overvoltage protection capability. They 2
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems, PIN 1. ANODE
2. ANODE
medical equipment and other applications. Their dual junction common 3. CATHODE
cathode design protects two separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Specification Features: 3
• SOT–23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration 1
2
• Working Peak Reverse Voltage Range – 12.8 V, 22 V
• Standard Zener Breakdown Voltage Range – 15 V, 27 V SOT–23
CASE 318
• Peak Power – 40 Watts @ 1.0 ms (Bidirectional), STYLE 9
per Figure 5. Waveform
• ESD Rating of Class N (exceeding 16 kV) per the Human MARKING DIAGRAM
Body Model
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 100 nA

M
xxx
• Flammability Rating UL 94V–O
Mechanical Characteristics:
xxx = 15D or 27C
CASE: Void-free, transfer-molded, thermosetting plastic case
M = Date Code
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
ORDERING INFORMATION
Package designed for optimal automated board assembly
Small package size for high density applications Device Package Shipping
Available in 8 mm Tape and Reel
MMBZ15VDLT1 SOT–23 3000/Tape & Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the MMBZ15VDLT3 SOT–23 10,000/Tape & Reel
13 inch/10,000 unit reel.
MMBZ27VCLT1 SOT–23 3000/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2001 146 Publication Order Number:

April, 2001 – Rev. 5 MMBZ15VDLT1/D
 MMBZ15VDLT1, MMBZ27VCLT1

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1.) @ TL ≤ 25°C Ppk 40 Watts
Total Power Dissipation on FR–5 Board (Note 2.) @ TA = 25°C °PD° 225 °mW°
Derate above 25°C 1.8 mW/°C

Thermal Resistance Junction to Ambient RθJA 556 °C/W

Total Power Dissipation on Alumina Substrate (Note 3.) @ TA = 25°C °PD° 300 °mW
Derate above 25°C 2.4 mW/°C

Thermal Resistance Junction to Ambient RθJA 417 °C/W

Junction and Storage Temperature Range TJ, Tstg – 55 to +150 °C
Lead Solder Temperature – Maximum (10 Second Duration) TL 230 °C

1. Non–repetitive current pulse per Figure 5. and derate above TA = 25°C per Figure 6.
2. FR–5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina

ELECTRICAL CHARACTERISTICS I
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) IF

Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP VC VBR VRWM
V
VRWM Working Peak Reverse Voltage IR VF
IT
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
IPP
VBR Maximum Temperature Coefficient of VBR
IF Forward Current Uni–Directional TVS
VF Forward Voltage @ IF

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 MMBZ15VDLT1, MMBZ27VCLT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage VC @ IPP (Note 5.)

Device VRWM IR @ VRWM VBR (Note 4.) (V) @ IT VC IPP VBR

Device Marking Volts nA Min Nom Max mA V A mV/
C
MMBZ15VDLT1 15D 12.8 100 14.3 15 15.8 1.0 21.2 1.9 12
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage VC @ IPP (Note 5.)

Device VRWM IR @ VRWM VBR (Note 4.) (V) @ IT VC IPP VBR

Device Marking Volts nA Min Nom Max mA V A mV/
C
MMBZ27VCLT1 27C 22 50 25.65 27 28.35 1.0 38 1.0 26
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5. and derate per Figure 6.

TYPICAL CHARACTERISTICS

MMBZ15VDLT1 MMBZ27VCLT1
17 29
BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T )
BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T )

BIDIRECTIONAL
BIDIRECTIONAL
16 28

15 27

14 26
UNIDIRECTIONAL

13 25
-
40 +
25 +
85 +
125 -
55 +
25 +
85 +
125
TEMPERATURE (°C) TEMPERATURE (°C)

Figure 1. Typical Breakdown Voltage Figure 2. Typical Breakdown Voltage

versus Temperature versus Temperature

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 MMBZ15VDLT1, MMBZ27VCLT1

10000

100

10

IR (nA)
1

0.1

0.01
-
40 +
25 +
85 +
125
TEMPERATURE (°C)

Figure 3. Typical Leakage Current

versus Temperature

300
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
250 tr ≤ 10 s
PEAK CURRENT DECAYS TO
PD , POWER DISSIPATION (mW)

ALUMINA SUBSTRATE PEAK VALUE IPP 50% OF IPP.

100
200
VALUE (%)

150 IPP
HALF VALUE
2
100 50
FR-5 BOARD
50 tP

0 0
0 25 50 75 100 125 150 175 0 1 2 3 4
TEMPERATURE (°C) t, TIME (ms)

Figure 4. Steady State Power Derating Curve Figure 5. Pulse Waveform

100
PEAK PULSE DERATING IN % OF PEAK POWER

90
80
OR CURRENT @ TA = 25 ° C

70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)

Figure 6. Pulse Derating Curve

SOLDERING PRECAUTIONS

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149
MMQA5V6T1 Series

24 Watt Peak Power Zener

Transient Voltage Suppressors
SC–59 Quad Common Anode for Zeners
ESD Protection
These quad monolithic silicon voltage suppressors are designed for http://onsemi.com
applications requiring transient voltage protection capability. They are
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems, medical PIN ASSIGNMENT
equipment, and other applications. Their quad junction common anode
design protects four separate lines using only one package. These devices
1 6
are ideal for situations where board space is at a premium.
6
5
Specification Features: 4 2 5
• SC–59 Package Allows Four Separate Unidirectional Configurations 1
2 3 4
• Working Peak Reverse Voltage Range – 3.0 V to 2.5 V
3

• Standard Zener Breakdown Voltage Range – 5.6 V to 33 V SC–59 PIN 1. CATHODE

CASE 318F 2. ANODE
• Peak Power – Minimum 24 W @ 1 ms (Unidirectional), per Figure 5 STYLE 1 3. CATHODE
• Peak Power – Minimum 150 W @ 20 s (Unidirectional), per Figure 6 4.
5.
CATHODE
ANODE
• ESD Rating of Class 3 (> 16 KV) per Human Body Model 6. CATHODE
• Maximum Clamp Voltage @ Peak Pulse Current
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications MARKING DIAGRAM
• Low Leakage < 2.0 A

M
Mechanical Characteristics: xxx
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable xxx = Device Code
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: = (See Table Next Page)
260°C for 10 Seconds M = Date Code

MAXIMUM RATINGS
Rating Symbol Value Unit ORDERING INFORMATION
Peak Power Dissipation (Note 1.) PPK 24 W Device
Package Shipping
@ 1.0 ms @ TL ≤ 25°C
MMQAxxxT1 SC–59 3000/Tape & Reel
Peak Power Dissipation (Note 2.) PPK 150 W
@ 20 s @ TL ≤ 25°C
MMQAxxxT3 SC–59 10,000/Tape & Reel
Total Power Dissipation (Note 3.) @ TA = 25°C PD 225 mW
Derate Above 25°C 1.8 mW/°C
Thermal Resistance – Junction to Ambient RJA 556 °C/W
†The “T1” suffix refers to an 8 mm, 7 inch reel.
Total Power Dissipation (Note 4.) @ TA = 25°C PD 300 mW The “T3” suffix refers to an 8 mm, 13 inch reel.
Derate Above 25°C 2.4 mW/°C
Thermal Resistance – Junction to Ambient RJA 417 °C/W
Junction and Storage Temperature Range TJ, Tstg –55 to °C
+150
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per
Figure 4
2. Nonrepetitive current pulse per Figure 6 and derated above TA = 25°C per
Figure 4
3. FR–5 board = 1.0 X 0.75 X 0.62 in.
4. Alumina substrate = 0.4 X 0.3 X 0.024 in., 99.5% alumina

 Semiconductor Components Industries, LLC, 2001 150 Publication Order Number:

March, 2001 – Rev. 4 MMQA5V6T1/D
 MMQA5V6T1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 0.9 V Max. @ IF (Note 5.) = 10 mA)
IF
Unidirectional (Circuit tied to Pins 1, 2 and 5; Pins 2, 3 and
5; or 2, 4 and 6; or Pins 2, 5 and 6)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VC VBR VRWM
VC Clamping Voltage @ IPP V
IR VF
IT
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
ZZT Maximum Zener Impedance @ IZT
IPP
VBR Breakdown Voltage @ IT
IT Test Current
Uni–Directional TVS
VBR Maximum Temperature Coefficient of VBR
IF Forward Current
VF Forward Voltage @ IF

ELECTRICAL CHARACTERISTICS
Breakdown Voltage VC @ IPP (Note 7.)
IR @ ZZT (Note 6
6.))
VRWM VRWM VBR (Note 5.) (Volts) @ IT @ IZT VC IPP VBR
Device
Device Marking Volts nA Min Nom Max mA  mA Volts Amps mW/
C
MMQA5V6T1 5A6 3.0 2000 5.32 5.6 5.88 1.0 400 1.0 8.0 3.0 1.26
MMQA6V2T1 6A2 4.0 700 5.89 6.2 6.51 1.0 300 1.0 9.0 2.66 10.6
MMQA6V8T1 6A8 4.3 500 6.46 6.8 7.14 1.0 300 1.0 9.8 2.45 10.9
MMQA12VT1 12A 9.1 75 11.4 12 12.6 1.0 80 1.0 17.3 1.39 14
MMQA13VT1 13A 9.8 75 12.35 13 13.65 1.0 80 1.0 18.6 1.29 15
MMQA15VT1 15A 11 75 14.25 15 15.75 1.0 80 1.0 21.7 1.1 16
MMQA18VT1 18A 14 75 17.1 18 18.9 1.0 80 1.0 26 0.923 19
MMQA20VT1 20A 15 75 19.0 20 21.0 1.0 80 1.0 28.6 0.84 20.1
MMQA21VT1 21A 16 75 19.95 21 22.05 1.0 80 1.0 30.3 0.792 21
MMQA22VT1 22A 17 75 20.9 22 23.1 1.0 80 1.0 31.7 0.758 22
MMQA24VT1 24A 18 75 22.8 24 25.2 1.0 100 1.0 34.6 0.694 25
MMQA27VT1 27A 21 75 25.65 27 28.35 1.0 125 1.0 39.0 0.615 28
MMQA30VT1 30A 23 75 28.5 30 31.5 1.0 150 1.0 43.3 0.554 32
MMQA33VT1 33A 25 75 31.35 33 34.65 1.0 200 1.0 48.6 0.504 37
5. VBR measured at pulse test current IT at an ambient temperature of 25°C
6. ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are I Z(ac) = 0.1 IZ(dc)
with the AC frequency = 1.0 kHz
7. Surge current waveform per Figure 5 and derate per Figure 4

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 MMQA5V6T1 Series

TYPICAL CHARACTERISTICS

300 10,000

250 BIASED AT 0 V
BIASED AT 1 V 1,000
C, CAPACITANCE (pF)

200 BIASED AT 50%

I R , LEAKAGE (nA)
OF VZ NOM
+150°C
150 100

+25°C
100
10
-40°C
50

0 0
5.6 6.8 12 20 27 33 5.6 6.8 20 27 33
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Typical Capacitance Figure 2. Typical Leakage Current

300 100
PEAK PULSE DERATING IN % OF PEAK POWER 90
250
PD , POWER DISSIPATION (mW)

80
ALUMINA SUBSTRATE
OR CURRENT @ TA = 25 ° C

70
200
60
150 50
40
100
30
FR5 BOARD
50 20
10
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)

Figure 3. Steady State Power Derating Curve Figure 4. Pulse Derating Curve

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 MMQA5V6T1 Series

TYPICAL CHARACTERISTICS

100
PULSE WIDTH (tP) IS DEFINED tr PEAK VALUE IRSM @ 8 s
AS THAT POINT WHERE THE 90
tr
PEAK CURRENT DECAYS TO 50% 80 PULSE WIDTH (tP) IS DEFINED

% OF PEAK PULSE CURRENT

PEAK VALUE IRSM OF IRSM. AS THAT POINT WHERE THE
100 70
tr ≤ 10 µs PEAK CURRENT DECAY = 8 s
60
VALUE (%)

HALF VALUE IRSM/2 @ 20 s

IRSM 50
HALF VALUE
2
40
50
30
tP
tP 20
10
0 0
0 1 2 3 4 0 20 40 60 80
t, TIME (ms) t, TIME (s)
Figure 5. 10 × 1000 s Pulse Waveform Figure 6. 8 × 20 s Pulse Waveform

100 200
RECTANGULAR
180
WAVEFORM, TA = 25°C PPK , PEAK SURGE POWER (W)
160
Ppk PEAK SURGE POWER (W)

8 × 20 WAVEFORM AS PER FIGURE 6

140
120
10 100

UNIDIRECTIONAL 80
60 10 × 100 WAVEFORM AS PER FIGURE 5
40
20
1.0 0
0.1 1.0 10 100 1000 5.6 6.8 12 20 27 33
PW, PULSE WIDTH (ms) NOMINAL VZ
Figure 7. Maximum Non–Repetitive Surge Figure 8. Typical Maximum Non–Repetitive
Power, Ppk versus PW Surge Power, Ppk versus VBR
Power is defined as VRSM x IZ(pk) where VRSM
is the clamping voltage at IZ(pk).

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 MMQA5V6T1 Series

TYPICAL COMMON ANODE APPLICATIONS

A quad junction common anode design in a SC-74 when board space is at a premium. A simplified example of
package protects four separate lines using only one package. MMQA Series Device applications is illustrated below.
This adds flexibility and creativity to PCB design especially

Computer Interface Protection

A
KEYBOARD B
TERMINAL FUNCTIONAL
I/O C
PRINTER DECODER
ETC. D

GND

MMQA SERIES DEVICE

Microprocessor Protection

VDD
VGG
ADDRESS BUS

RAM ROM

DATA BUS
CPU
I/O

CLOCK
CONTROL BUS

GND

MMQA SERIES DEVICE

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154
MSQA6V1W5T2

Quad Array for

ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems, http://onsemi.com
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package. MARKING
These devices are ideal for situations where board space is at a DIAGRAM
premium.
4 5
Specification Features
•

D
61
SC88A Package Allows Four Separate Unidirectional Configurations
• Low Leakage < 1 A @ 3 Volt SC–88A/SOT–323
1 2 3
CASE 419A
• Breakdown Voltage: 6.1 Volt – 7.2 Volt @ 1 mA
• Low Capacitance (90 pF typical) 61 = Device Marking
• ESD Protection Meeting IEC1000–4–2 D = One Digit Date Code

Mechanical Characteristics
• Void Free, Transfer–Molded, Thermosetting Plastic Case
•
1 5
Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly 2
• Small Package Size for High Density Applications
3 4

ORDERING INFORMATION

Device Package Shipping

MSQA6V1W5T2 SC–88A 3000/Tape & Reel

NOTE: T2 Suffix Devices are Packaged with Pin 1

NOTE: Opposing Sprocket Hole.

 Semiconductor Components Industries, LLC, 2001 155 Publication Order Number:

March, 2001 – Rev. 1 MSQA6V1W5T2/D
 MSQA6V1W5T2

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Characteristic Symbol Value Unit
Peak Power Dissipation @ 20 s @TA ≤ 25°C (Note 1.) Ppk 150 Watts
Steady State Power – 1 Diode (Note 2.) PD 385 mW
Thermal Resistance Junction to Ambient RJA 325 °C/W
Above 25°C, Derate 3.1 mW/°C
Maximum Junction Temperature TJmax 150 °C
Operating Junction and Storage Temperature Range TJ Tstg –55 to +150 °C
ESD Discharge MIL STD 883C – Method 3015–6 VPP 16 kV
IEC1000–4–2, Air Discharge 16
IEC1000–4–2, Contact Discharge 9
Lead Solder Temperature (10 seconds duration) TL 260 °C

ELECTRICAL CHARACTERISTICS
Breakdown Voltage Leakage Current Capacitance Max
VBR @ 1 mA (Volts) IRM @ VRM = 3 V @ 0 V Bias VF @ IF = 200 mA
Device Min Nom Max (A) (pF) (V)
MSQA6V1W5 6.1 6.6 7.2 1.0 90 1.25
1. Non–repetitive current per Figure 1. Derate per Figure 2.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR–4 board with min pad.

1000 100
tr PEAK VALUE IRSM @ 8 s
90
Ppk , PEAK SURGE POWER (WATTS)

80 PULSE WIDTH (tP) IS DEFINED

% OF PEAK PULSE CURRENT

AS THAT POINT WHERE THE

100 70 PEAK CURRENT DECAY = 8 s
60
HALF VALUE IRSM/2 @ 20 s
50
40
10
30
tP
NOTE: Non–Repetitive Surge. 20
10
1 0
1 10 100 1000 0 20 40 60 80
t, TIME (s) t, TIME (s)
Figure 1. Pulse Width Figure 2. 8 × 20 s Pulse Waveform

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 MSQA6V1W5T2

100 100
90 90
80 80

TYPICAL CAPACITANCE (pF)

OR CURRENT @ TA = 25 ° C

70 70

1 MHz FREQUENCY
60 60
50 50
40 40
30 30
20 20
10 10
0 0
0 25 50 75 100 125 150 175 200 0 1.0 2.0 3.0 4.0 5.0
TA, AMBIENT TEMPERATURE (°C) BIAS VOLTAGE (VOLTS)
Figure 3. Pulse Derating Curve Figure 4. Capacitance

1.0 100

Ipp, PEAK PULSE CURRENT (AMPS)

IF , FORWARD CURRENT (A)

0.1

10

0.01
2.5 s SQUARE WAVE

0.001 1.0
0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 5.0 10 15 20 25 30
VF, FORWARD VOLTAGE (VOLTS) VC, CLAMPING VOLTAGE (VOLTS)
Figure 5. Forward Voltage Figure 6. Clamping Voltage versus Peak
Pulse Current (Reverse Direction)

100
Ipp, PEAK FORWARD PULSE CURRENT (AMPS)

10

1.0
2.5 s SQUARE WAVE

0.1
0 2.0 4.0 6.0 8.0 10 12
VC, FORWARD CLAMPING VOLTAGE (VOLTS)
Figure 7. Clamping Voltage versus Peak
Pulse Current (Forward Direction)

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DF6A6.8FUT1

Quad Array for

ESD Protection
This quad voltage suppressor is designed for applications requiring
transient overvoltage protection capability. It is intended for use in
voltage and ESD sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and http://onsemi.com
other applications. Its quad junction common anode design protects
four separate lines using only one package. These devices are ideal for
situations where board space is at a premium. 1 6

Specification Features 2 5
• SC–88 Package Allows Four Separate Unidirectional Configurations
• Low Leakage < 1 A @ 5 Volt 3 4
• Breakdown Voltage: 6.4 – 7.2 Volt @ 5 mA
• Low Capacitance (40 pF typical)
• ESD Protection Meeting 61000–4–2 Level 4
and 16 kV Human Body Model MARKING
DIAGRAM
Mechanical Characteristics
6 5 4
• Void Free, Transfer–Molded, Thermosetting Plastic Case
SC–88
• Corrosion Resistant Finish, Easily Solderable CASE 419B
68d

• Package Designed for Optimal Automated Board Assembly PLASTIC

1 2 3
• Small Package Size for High Density Applications
68 = Device Marking
d = One Digit Date Code
MAXIMUM RATINGS (TA = 25°C unless otherwise noted) = Pin 1 Indicator
Rating Symbol Value Unit
Peak Power Dissipation @ 8 x 20 s Ppk 75 Watts
(Note 1) ORDERING INFORMATION
Steady State Power Dissipation PD 385 mW Device Package Shipping
(Note 2)
DF6A6.8FUT1 SC–88 3000/Tape & Reel
Thermal Resistance – RJA
Junction to Ambient 328 °C/W
Derate Above 25°C 3.0 mW/°C
Maximum Junction Temperature TJmax 150 °C
Operating Junction and Storage TJ, Tstg –55 to °C
Temperature Range +150
ESD Discharge VPP kV
MIL STD 883C – Method 3015–6 16
IEC61000–4–2, Air Discharge 16
IEC61000–4–2, Contact Discharge 8
Lead Solder Temperature TL 260 °C
(10 seconds duration)
1. Per Waveform Figure 1
2. Mounted on FR–5 Board = 1.0 X 0.75 X 0.062 in.

 Semiconductor Components Industries, LLC, 2001 158 Publication Order Number:

May, 2001 – Rev. 0 DF6A6.8FUT1/D
 DF6A6.8FUT1

I
IF

VBR VRWM
V
IR VF
IT

V–I Curve
ELECTRICAL CHARACTERISTICS
Typical Max Max
Breakdown Voltage Leakage Current Capacitance Max ZZ @ ZZK @
VBR @ 5 mA (Volts) IRM @ VRWM = 5 V @ 0 V Bias VF @ IF = 10 mA 5 mA 0.5 mA
Device
Device Marking Min Nom Max (A) (pF) (V) () ()
DF6A6.8FUT1 68 6.4 6.8 7.2 1.0 40 1.25 30 300

100 50
tr PEAK VALUE IRSM @ 8 s
90
% OF PEAK PULSE CURRENT

45
TYPICAL CAPACITANCE (pF)

80 PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE 40
1 MHz FREQUENCY

70 PEAK CURRENT DECAY = 8 s

60 35
HALF VALUE IRSM/2 @ 20 s
50 30
40 25
30
tP 20
20
10 15

0 10
0 20 40 60 80 0 1 2 3 4 5
t, TIME (s) BIAS VOLTAGE (VOLTS)

Figure 1. 8 × 20 s Pulse Waveform Figure 2. Capacitance

1 10
Ipp , PEAK PULSE CURRENT (AMPS)
IF, FORWARD CURRENT (A)

0.1

8 x 20 s per Figure 1

0.01

0.001

0.0001 1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 8 9 10 11 12
VF, FORWARD VOLTAGE (VOLTS) VC, CLAMPING VOLTAGE (VOLTS)
Figure 3. Forward Voltage Figure 4. Clamping Voltage versus Peak
Pulse Current

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SMS05T1

SC-74 Quad Transient

Voltage Suppressor
for ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is http://onsemi.com
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems and
other applications. This quad device provides superior surge SC–74 QUAD TRANSIENT
protection over current quad Zener MMQA series by providing up to VOLTAGE SUPPRESSOR
350 watts peak power. 350 WATTS PEAK POWER
Features: 5 VOLTS
• SC-74 Package Allows Four Separate Unidirectional Configurations
• Peak Power – 350 Watts, 8 x 20 S
• ESD Rating of Class N (Exceeding 25 kV) per the PIN ASSIGNMENT
Human Body Model
• ESD Rating:
IEC 61000–4–2 (ESD) 15 kV (air) 8 kV (contact) 1 6
3
2
IEC 61000–4–4 (EFT) 40 Amps (5/50 ns) 1
2 5
IEC 61000–4–5 (lighting) 23 Amps (8/20 s) 6
5
• UL Flammability Rating of 94V–0 4
3 4
SC–74
Typical Applications:
CASE 318F PIN 1. CATHODE
• Hand Held Portable Applications such as Cell Phones, Pagers, STYLE 1 2. ANODE
Notebooks and Notebook Computers 3. CATHODE
4. CATHODE
5. ANODE
MAXIMUM RATINGS 6. CATHODE
Rating Symbol Value Unit
Peak Power Dissipation Ppk 350 W MARKING DIAGRAM
8 x 20 S @ TA = 25°C (Note 1.)
Total Power Dissipation on FR–5 Board PD 225 mW
@ TA = 25°C (Note 2.) xxx d
Derate Above 25°C 1.8 mW/°C
Thermal Resistance, RJA 556 °C/W
Junction–to–Ambient xxx = Device Code
d = Date Code
Junction and Storage TJ, Tstg –55 to °C
Temperature Range +150
Lead Solder Temperature – TL 260 °C
Maximum 10 Seconds Duration
ORDERING INFORMATION

1. Non–repetitive current pulse 8 x 20 S exponential decay waveform Device Package Shipping

2. FR–5 = 1.0 x 0.75 x 0.62 in.
SMS05T1 SC–74 3000/Tape & Reel

SMS05T3 SC–74 10,000/Tape & Reel

 Semiconductor Components Industries, LLC, 2001 160 Publication Order Number:

March, 2001 – Rev. 2 SMS05T1/D
 SMS05T1

VC VBR VRWM
V
IR
IT

IPP

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage @ It = 1.0 mA VBR 6.0 – 7.2 V
Reverse Leakage Current @ VRWN = 5.0 Volts IR N/A – 20 A
Maximum Clamping Voltage @ IPP = 5.0 A, 8 x 20 S VC N/A – 9.8 V
Maximum Clamping Voltage @ IPP = 23 A, 8 x 20 S VC N/A – 15.5 V
Between I/O Pins and Ground @ VR = 0 Volts, 1.0 MHz Capacitance 250 300 400 pF

10 110
100
PPP, PEAK PULSE POWER (kW)

% OF RATED POWER OR IPP

90
80
1 70
60
50
40
0.1
30
20
10
0.01 0
0.1 1 10 100 1000 0 25 50 75 100 125 150
tp, PULSE DURATION (s) TA, AMBIENT TEMPERATURE (°C)

Figure 1. Non–Repetitive Peak Pulse Power Figure 2. Power Derating Curve

versus Pulse Time

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 SMS05T1

110 20
100 WAVEFORM 18 WAVEFORM
PARAMETERS

VC, CLAMPING VOLTAGE (V)

90 PARAMETERS
tr = 8 s 16
tr = 8 s
80 td = 20 s
PERCENT OF IPP

14 td = 20 s
70
c–t 12
60
10
50 td = IPP/2
8 8 X 20 s SURGE
40
6
30
20 4
10 2
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25
t, TIME (s) IPP, PEAK PULSE CURRENT (A)

Figure 3. Pulse Waveform Figure 4. Clamping Voltage versus

Peak Pulse Current

5 400
PULSE
350
VF, FORWARD VOLTAGE (V)

WAVEFORM
4 tr = 8 s
C, CAPACITANCE (pF) 300
td = 20 s TJ = 25°C
250
3 8 X 20 s SURGE
200
2 150

100
1
50
0 0
0 5 10 15 20 0 1 2 3 4 5 6
IF, FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V)

Figure 5. 8 x 20 s VF Figure 6. Typical Capacitance

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 CHAPTER 6
Zener Voltage Regulator Diodes –
Axial Leaded Data Sheets

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http://onsemi.com
164
1N4370A Series

500 mW DO-35 Hermetically

Sealed Glass Zener Voltage
Regulators
This is a complete series of 500 mW Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead http://onsemi.com
hermetically sealed glass package that offers protection in all common
environmental conditions.
Cathode Anode
Specification Features:
• Zener Voltage Range – 2.4 V to 12 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• DO–204AH (DO–35) Package – Smaller than Conventional
DO–204AA Package
• Double Slug Type Construction
• Metallurgical Bonded Construction AXIAL LEAD
CASE 299
Mechanical Characteristics: GLASS
CASE: Double slug type, hermetically sealed glass
FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM
readily solderable L
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 1N
xx
230°C, 1/16″ from the case for 10 seconds xxA
YWW
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any L = Assembly Location
1NxxxxA = Device Code
MAXIMUM RATINGS (Note 1.) = (See Table Next Page)
Y = Year
Rating Symbol Value Unit WW = Work Week
Max. Steady State Power Dissipation PD 500 mW
@ TL ≤ 75°C, Lead Length = 3/8″
Derate above 75°C 4.0 mW/°C
ORDERING INFORMATION

Operating and Storage TJ, Tstg –65 to °C Device Package Shipping

Temperature Range +200
1NxxxxA Axial Lead 3000 Units/Box
1. Some part number series have lower JEDEC registered ratings.
1NxxxxARL Axial Lead 5000/Tape & Reel

1NxxxxARL2 * Axial Lead 5000/Tape & Reel

1NxxxxARA1 Axial Lead 3000/Ammo Pack

1NxxxxATA Axial Lead 5000/Ammo Pack

1NxxxxATA2 * Axial Lead 5000/Tape & Reel

1NxxxxARR1  Axial Lead 3000/Tape & Reel

1NxxxxARR2  Axial Lead 3000/Tape & Reel

* The “2” suffix refers to 26 mm tape spacing.

 Polarity band up with cathode lead off first
 Polarity band down with cathode lead off first

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001 165 Publication Order Number:

May, 2001 – Rev. 1 1N4370A/D
 1N4370A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
VZ VR V
IZM Maximum DC Zener Current IR VF
IZT
IR Reverse Leakage Current @ VR
VR Reverse Voltage
IF Forward Current
VF Forward Voltage @ IF

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)

Zener Voltage (Note 3.) IR @ VR = 1 V

ZZT (Note 4
4.))
VZ (Volts) @ IZT @ IZT IZM (Note 5.) TA = 25
C TA = 150
C
Device Device
(Note 2.) Marking Min Nom Max (mA) () (mA) (µA) (µA)
1N4370A 1N4370A 2.28 2.4 2.52 20 30 150 100 200
1N4371A 1N4371A 2.57 2.7 2.84 20 30 135 75 150
1N4372A 1N4372A 2.85 3.0 3.15 20 29 120 50 100
1N746A 1N746A 3.14 3.3 3.47 20 28 110 10 30
1N747A 1N747A 3.42 3.6 3.78 20 24 100 10 30
1N748A 1N748A 3.71 3.9 4.10 20 23 95 10 30
1N749A 1N749A 4.09 4.3 4.52 20 22 85 2 30
1N750A 1N750A 4.47 4.7 4.94 20 19 75 2 30
1N751A 1N751A 4.85 5.1 5.36 20 17 70 1 20
1N752A 1N752A 5.32 5.6 5.88 20 11 65 1 20
1N753A 1N753A 5.89 6.2 6.51 20 7 60 0.1 20
1N754A 1N754A 6.46 6.8 7.14 20 5 55 0.1 20
1N755A 1N755A 7.13 7.5 7.88 20 6 50 0.1 20
1N756A 1N756A 7.79 8.2 8.61 20 8 45 0.1 20
1N757A 1N757A 8.65 9.1 9.56 20 10 40 0.1 20
1N758A 1N758A 9.50 10 10.5 20 17 35 0.1 20
1N759A 1N759A 11.40 12 12.6 20 30 30 0.1 20
2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
3. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8″
lead length.
4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I Z(ac) =
0.1 IZ(dc) with the ac frequency = 60 Hz.
5. MAXIMUM ZENER CURRENT RATINGS (IZM)
Values shown are based on the JEDEC rating of 400 mW where the actual zener voltage (VZ) is known at the operating point, the maximum
zener current may be increased and is limited by the derating curve.

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 1N4370A Series

0.7
HEAT
SINKS

POWER DISSIPATION (WATTS)

0.6

PD, MAXIMUM STEADY STATE

0.5

0.4
3/8" 3/8"
0.3

0.2

0.1

0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)

Figure 1. Steady State Power Derating

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167
 1N4370A Series

APPLICATION NOTE — ZENER VOLTAGE

θ JL , JUNCTIONTOLEAD THERMAL RESISTANCE (°C/W)

Since the actual voltage available from a given zener 500
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions 400
in order to calculate its value. The following procedure is L L
recommended: 300
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA. 2.4-60V
200
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
62-200V
is the power dissipation. The value for θLA will vary and 100
depends on the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
0
and for printed circuit board wiring. 0 0.2 0.4 0.6 0.8 1
The temperature of the lead can also be measured using a L, LEAD LENGTH TO HEAT SINK (INCH)
thermocouple placed on the lead as close as possible to the Figure 2. Typical Thermal Resistance
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of 1000
7000
pulsed operation once steady-state conditions are achieved. 5000 TYPICAL LEAKAGE CURRENT
Using the measured value of TL, the junction temperature AT 80% OF NOMINAL
2000 BREAKDOWN VOLTAGE
may be determined by:
1000
TJ = TL + ∆TJL. 700
500
∆TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power: 200
∆TJL = θJLPD. 100
70
For worst-case design, using expected limits of IZ, limits 50
I R , LEAKAGE CURRENT (µ A)

of PD and the extremes of TJ(∆TJ) may be estimated.

20
Changes in voltage, VZ, can then be found from:
10
∆V = θVZTJ. 7
5
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5. 2
Under high power-pulse operation, the zener voltage will 1
vary with time and may also be affected significantly by the 0.7
0.5
zener resistance. For best regulation, keep current +125°C
excursions as low as possible. 0.2
Surge limitations are given in Figure 7. They are lower 0.1
than would be expected by considering only junction 0.07
0.05
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device 0.02
degradation should the limits of Figure 7 be exceeded. 0.01
0.007 +25°C
0.005

0.002
0.001
3 4 5 6 7 8 9 10 11 12 13 14 15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current

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 1N4370A Series

TEMPERATURE COEFFICIENTS
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)

+12 100
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

70
+10 50
+8 30

+6 20

RANGE VZ@IZ(NOTE 2)
+4 10
7
+2
5
RANGE VZ@IZT
0 (NOTE 2) 3
-2 2

-4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4a. Range for Units to 12 Volts Figure 4b. Range for Units 12 to 100 Volts

200 +6
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

VZ@IZ
180 +4 TA=25°C

160 +2
20mA

140 0
0.01mA
VZ@IZT 1mA
120 -2
(NOTE 2) NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
100 -4
120 130 140 150 160 170 180 190 200 3 4 5 6 7 8
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts Figure 5. Effect of Zener Current

1000 100
TA=25°C 70
500 TA=25°C
0V BIAS 50
0 BIAS
200 30
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

100 20
1V BIAS
50 1VOLTBIAS
10
20 7
50% OF VZBIAS
10 50% OF 5
VZBIAS
5 3
2
2
1 1
1 2 5 10 20 50 100 120 140 160 180 190 200 220
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4–100 Volts Figure 6b. Typical Capacitance 120–200 Volts

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 1N4370A Series

100
70 RECTANGULAR
WAVEFORM
Ppk , PEAK SURGE POWER (WATTS)
50 11V-91V NONREPETITIVE
TJ=25°C PRIOR TO
30 5% DUTY CYCLE 1.8V-10V NONREPETITIVE INITIAL PULSE
20

10 10% DUTY CYCLE

7
5
20% DUTY CYCLE
3
2

1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000

PW, PULSE WIDTH (ms)

Figure 7a. Maximum Surge Power 1.8–91 Volts

1000 1000
700 500 TJ=25°C
500 VZ=2.7V iZ(rms)=0.1 IZ(dc)
Ppk , PEAK SURGE POWER (WATTS)

RECTANGULAR

ZZ , DYNAMIC IMPEDANCE (OHMS)

300 WAVEFORM, TJ=25°C f=60Hz
200 200
47V
100 100
70 27V
50 100-200VOLTS NONREPETITIVE 50
30
20 20
10 10 6.2V
7
5 5
3
2 2
1 1
0.01 0.1 1 10 100 1000 0.1 0.2 0.5 1 2 5 10 20 50 100
PW, PULSE WIDTH (ms) IZ, ZENER CURRENT (mA)

Figure 7b. Maximum Surge Power DO-204AH Figure 8. Effect of Zener Current on
100–200 Volts Zener Impedance

1000 1000
700 TJ=25°C
MAXIMUM
500 iZ(rms)=0.1 IZ(dc)
ZZ , DYNAMIC IMPEDANCE (OHMS)

500 MINIMUM
IZ=1mA f=60Hz
I F , FORWARD CURRENT (mA)

200 200
100 100
70 5mA
50 50

20 20mA 20 75°C
10 10
7 25°C
5 5 150°C

2 0°C
2
1 1
1 2 3 5 7 10 20 30 50 70 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. Typical Forward Characteristics

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 1N4370A Series

20

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VZ, ZENER VOLTAGE (VOLTS)

Figure 11. Zener Voltage versus Zener Current — VZ = 1 thru 16 Volts

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
VZ, ZENER VOLTAGE (VOLTS)

Figure 12. Zener Voltage versus Zener Current — VZ = 15 thru 30 Volts

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 1N4370A Series

10
TA=25°

I Z , ZENER CURRENT (mA)

0.1

0.01
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105
VZ, ZENER VOLTAGE (VOLTS)

Figure 13. Zener Voltage versus Zener Current — VZ = 30 thru 105 Volts

10

1
I Z , ZENER CURRENT (mA)

0.1

0.01
110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260
VZ, ZENER VOLTAGE (VOLTS)

Figure 14. Zener Voltage versus Zener Current — VZ = 110 thru 220 Volts

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172
1N957B Series

500 mW DO-35 Hermetically

Sealed Glass Zener Voltage
Regulators
This is a complete series of 500 mW Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead http://onsemi.com
hermetically sealed glass package that offers protection in all common
environmental conditions.
Cathode Anode
Specification Features:
• Zener Voltage Range – 6.8 V to 75 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• DO–204AH (DO–35) Package – Smaller than Conventional
DO–204AA Package
• Double Slug Type Construction
• Metallurgical Bonded Construction AXIAL LEAD
CASE 299
Mechanical Characteristics: GLASS
CASE: Double slug type, hermetically sealed glass
FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM
readily solderable L
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 1N
9x
230°C, 1/16″ from the case for 10 seconds xB
YWW
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any L = Assembly Location
1N9xxB = Device Code
MAXIMUM RATINGS (Note 1.) = (See Table Next Page)
Y = Year
Rating Symbol Value Unit WW = Work Week
Max. Steady State Power Dissipation PD 500 mW
@ TL ≤ 75°C, Lead Length = 3/8″
Derate above 75°C 4.0 mW/°C
ORDERING INFORMATION

Operating and Storage TJ, Tstg –65 to °C Device Package Shipping

Temperature Range +200
1N9xxB Axial Lead 3000 Units/Box
1. Some part number series have lower JEDEC registered ratings.
1N9xxBRL Axial Lead 5000/Tape & Reel

1N9xxBRL2 * Axial Lead 5000/Tape & Reel

1N9xxBRA1 Axial Lead 3000/Ammo Pack

1N9xxBTA Axial Lead 5000/Ammo Pack

1N9xxBTA2 * Axial Lead 5000/Tape & Reel

1N9xxBRR1  Axial Lead 3000/Tape & Reel

1N9xxBRR2  Axial Lead 3000/Tape & Reel

* The “2” suffix refers to 26 mm tape spacing.

 Polarity band up with cathode lead off first
 Polarity band down with cathode lead off first

 Semiconductor Components Industries, LLC, 2001 173 Publication Order Number:

May, 2001 – Rev. 1 1N957B/D
 1N957B Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
VZ VR V
IZK Reverse Current IR VF
IZT
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Breakdown Voltage
IF Forward Current
VF Forward Voltage @ IF
Zener Voltage Regulator
IZM Maximum DC Zener Current

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)

Zener Voltage (Note 3.) Zener Impedance (Note 4.) Leakage Current
IZM
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR (Note 5.)
Device Device
(Note 2.) Marking Min Nom Max mA   mA µA Volts mA
1N957B 1N957B 6.46 6.8 7.14 18.5 4.5 700 1.0 150 5.2 47
1N958B 1N958B 7.125 7.5 7.875 16.5 5.5 700 0.5 75 5.7 42
1N959B 1N959B 7.79 8.2 8.61 15 6.5 700 0.5 50 6.2 38
1N960B 1N960B 8.645 9.1 9.555 14 7.5 700 0.5 25 6.9 35
1N961B 1N961B 9.5 10 10.5 12.5 8.5 700 0.25 10 7.6 32
1N962B 1N962B 10.45 11 11.55 11.5 9.5 700 0.25 5 8.4 28
1N963B 1N963B 11.4 12 12.6 10.5 11.5 700 0.25 5 9.1 26
1N964B 1N964B 12.35 13 13.65 9.5 13 700 0.25 5 9.9 24
1N965B 1N965B 14.25 15 15.75 8.5 16 700 0.25 5 11.4 21
1N966B 1N966B 15.2 16 16.8 7.8 17 700 0.25 5 12.2 19
1N967B 1N967B 17.1 18 18.9 7.0 21 750 0.25 5 13.7 17
1N968B 1N968B 19 20 21 6.2 25 750 0.25 5 15.2 15
1N969B 1N969B 20.9 22 23.1 5.6 29 750 0.25 5 16.7 14
1N970B 1N970B 22.8 24 25.2 5.2 33 750 0.25 5 18.2 13
1N971B 1N971B 25.65 27 28.35 4.6 41 750 0.25 5 20.6 11
1N972B 1N972B 28.5 30 31.5 4.2 49 1000 0.25 5 22.8 10
1N973B 1N973B 31.35 33 34.65 3.8 58 1000 0.25 5 25.1 9.2
1N974B 1N974B 34.2 36 37.8 3.4 70 1000 0.25 5 27.4 8.5
1N975B 1N975B 37.05 39 40.95 3.2 80 1000 0.25 5 29.7 7.8
1N978B 1N978B 48.45 51 53.55 2.5 125 1500 0.25 5 38.8 5.9
1N979B 1N979B 53.2 56 58.8 2.2 150 2000 0.25 5 42.6 5.4
1N982B 1N982B 71.25 75 78.75 1.7 270 2000 0.25 5 56 4.1
2. TOLERANCE AND VOLTAGE DESIGNATION
Tolerance designation – Device tolerance of ±5% is indicated by a “B” suffix.
3. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8″
lead length.
4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I Z(ac) =
0.1 IZ(dc) with the ac frequency = 60 Hz.
5. MAXIMUM ZENER CURRENT RATINGS (IZM)
Values shown are based on the JEDEC rating of 400 mW where the actual zener voltage (VZ) is known at the operating point, the maximum
zener current may be increased and is limited by the derating curve.

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 1N957B Series

0.7
HEAT
SINKS

POWER DISSIPATION (WATTS)

0.6

PD, STEADY STATE

0.5

0.4
3/8" 3/8"
0.3

0.2

0.1

0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)

Figure 1. Steady State Power Derating

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 1N957B Series

APPLICATION NOTE — ZENER VOLTAGE

θ JL , JUNCTIONTOLEAD THERMAL RESISTANCE (°C/W)

Since the actual voltage available from a given zener 500
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions 400
in order to calculate its value. The following procedure is L L
recommended: 300
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA. 2.4-60V
200
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
62-200V
is the power dissipation. The value for θLA will vary and 100
depends on the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
0
and for printed circuit board wiring. 0 0.2 0.4 0.6 0.8 1
The temperature of the lead can also be measured using a L, LEAD LENGTH TO HEAT SINK (INCH)
thermocouple placed on the lead as close as possible to the Figure 2. Typical Thermal Resistance
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of 1000
7000
pulsed operation once steady-state conditions are achieved. 5000 TYPICAL LEAKAGE CURRENT
Using the measured value of TL, the junction temperature AT 80% OF NOMINAL
2000 BREAKDOWN VOLTAGE
may be determined by:
1000
TJ = TL + ∆TJL. 700
500
∆TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power: 200
∆TJL = θJLPD. 100
70
For worst-case design, using expected limits of IZ, limits 50
I R , LEAKAGE CURRENT (µ A)

of PD and the extremes of TJ(∆TJ) may be estimated.

20
Changes in voltage, VZ, can then be found from:
10
∆V = θVZTJ. 7
5
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5. 2
Under high power-pulse operation, the zener voltage will 1
vary with time and may also be affected significantly by the 0.7
0.5
zener resistance. For best regulation, keep current +125°C
excursions as low as possible. 0.2
Surge limitations are given in Figure 7. They are lower 0.1
than would be expected by considering only junction 0.07
0.05
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device 0.02
degradation should the limits of Figure 7 be exceeded. 0.01
0.007 +25°C
0.005

0.002
0.001
3 4 5 6 7 8 9 10 11 12 13 14 15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current

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 1N957B Series

TEMPERATURE COEFFICIENTS
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)

+12 100
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

70
+10 50
+8 30

+6 20

RANGE VZ@IZ(NOTE 2)
+4 10
7
+2
5
RANGE VZ@IZT
0 (NOTE 2) 3
-2 2

-4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4a. Range for Units to 12 Volts Figure 4b. Range for Units 12 to 100 Volts

200 +6
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

VZ@IZ
180 +4 TA=25°C

160 +2
20mA

140 0
0.01mA
VZ@IZT 1mA
120 -2
(NOTE 2) NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
100 -4
120 130 140 150 160 170 180 190 200 3 4 5 6 7 8
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts Figure 5. Effect of Zener Current

1000 100
TA=25°C 70
500 TA=25°C
0V BIAS 50
0 BIAS
200 30
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

100 20
1V BIAS
50 1VOLTBIAS
10
20 7
50% OF VZBIAS
10 50% OF 5
VZBIAS
5 3
2
2
1 1
1 2 5 10 20 50 100 120 140 160 180 190 200 220
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4–100 Volts Figure 6b. Typical Capacitance 120–200 Volts

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 1N957B Series

100
70 RECTANGULAR
WAVEFORM
Ppk , PEAK SURGE POWER (WATTS)
50 11V-91V NONREPETITIVE
TJ=25°C PRIOR TO
30 5% DUTY CYCLE 1.8V-10V NONREPETITIVE INITIAL PULSE
20

10 10% DUTY CYCLE

7
5
20% DUTY CYCLE
3
2

1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000

PW, PULSE WIDTH (ms)

Figure 7a. Maximum Surge Power 1.8–91 Volts

1000 1000
700 500 TJ=25°C
500 VZ=2.7V iZ(rms)=0.1 IZ(dc)
Ppk , PEAK SURGE POWER (WATTS)

RECTANGULAR

ZZ , DYNAMIC IMPEDANCE (OHMS)

300 WAVEFORM, TJ=25°C f=60Hz
200 200
47V
100 100
70 27V
50 100-200VOLTS NONREPETITIVE 50
30
20 20
10 10 6.2V
7
5 5
3
2 2
1 1
0.01 0.1 1 10 100 1000 0.1 0.2 0.5 1 2 5 10 20 50 100
PW, PULSE WIDTH (ms) IZ, ZENER CURRENT (mA)

Figure 7b. Maximum Surge Power DO-204AH Figure 8. Effect of Zener Current on
100–200 Volts Zener Impedance

1000 1000
700 TJ=25°C
MAXIMUM
500 iZ(rms)=0.1 IZ(dc)
ZZ , DYNAMIC IMPEDANCE (OHMS)

500 MINIMUM
IZ=1mA f=60Hz
I F , FORWARD CURRENT (mA)

200 200
100 100
70 5mA
50 50

20 20mA 20 75°C
10 10
7 25°C
5 5 150°C

2 0°C
2
1 1
1 2 3 5 7 10 20 30 50 70 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. Typical Forward Characteristics

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 1N957B Series

20

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VZ, ZENER VOLTAGE (VOLTS)

Figure 11. Zener Voltage versus Zener Current — VZ = 1 thru 16 Volts

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
VZ, ZENER VOLTAGE (VOLTS)

Figure 12. Zener Voltage versus Zener Current — VZ = 15 thru 30 Volts

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 1N957B Series

10
TA=25°

I Z , ZENER CURRENT (mA)

0.1

0.01
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105
VZ, ZENER VOLTAGE (VOLTS)

Figure 13. Zener Voltage versus Zener Current — VZ = 30 thru 105 Volts

10

1
I Z , ZENER CURRENT (mA)

0.1

0.01
110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260
VZ, ZENER VOLTAGE (VOLTS)

Figure 14. Zener Voltage versus Zener Current — VZ = 110 thru 220 Volts

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180
1N5985B Series

500 mW DO-35 Hermetically

Sealed Glass Zener Voltage
Regulators
This is a complete series of 500 mW Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead http://onsemi.com
hermetically sealed glass package that offers protection in all common
environmental conditions.
Cathode Anode
Specification Features:
• Zener Voltage Range – 2.4 V to 20 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• DO–204AH (DO–35) Package – Smaller than Conventional
DO–204AA Package
• Double Slug Type Construction
• Metallurgical Bonded Construction AXIAL LEAD
CASE 299
Mechanical Characteristics: GLASS
CASE: Double slug type, hermetically sealed glass
FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM
readily solderable L
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 1N
xx
230°C, 1/16″ from the case for 10 seconds xxB
YWW
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any L = Assembly Location
1NxxxxB = Device Code
MAXIMUM RATINGS (Note 1.) = (See Table Next Page)
Y = Year
Rating Symbol Value Unit WW = Work Week
Max. Steady State Power Dissipation PD 500 mW
@ TL ≤ 75°C, Lead Length = 3/8″
Derate above 75°C 4.0 mW/°C
ORDERING INFORMATION

Operating and Storage TJ, Tstg –65 to °C Device Package Shipping

Temperature Range +200
1NxxxxB Axial Lead 3000 Units/Box
1. Some part number series have lower JEDEC registered ratings.
1NxxxxBRL Axial Lead 5000/Tape & Reel

1NxxxxBRL2 * Axial Lead 5000/Tape & Reel

1NxxxxBTA Axial Lead 5000/Ammo Pack

1NxxxxBTA2 * Axial Lead 5000/Tape & Reel

1NxxxxBRR1  Axial Lead 3000/Tape & Reel

1NxxxxBRR2  Axial Lead 3000/Tape & Reel

* The “2” suffix refers to 26 mm tape spacing.

 Polarity band up with cathode lead off first
 Polarity band down with cathode lead off first

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001 181 Publication Order Number:

May, 2001 – Rev. 1 1N5985B/D
 1N5985B Series

ELECTRICAL CHARACTERISTICS (TL = 30°C unless I

otherwise noted, VF = 1.5 V Max @ IF = 100 mA for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
VZ VR V
IZK Reverse Current IR VF
IZT
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Breakdown Voltage
IF Forward Current
VF Forward Voltage @ IF
Zener Voltage Regulator
IZM Maximum DC Zener Current

ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 100 mA for all types)

Zener Voltage (Note 3.) Zener Impedance (Note 4.) Leakage Current
IZM
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR (Note 5.)
Device Device
(Note 2.) Marking Min Nom Max mA   mA µA Volts mA
1N5985B 1N5985B 2.28 2.4 2.52 5 100 1800 0.25 100 1.0 208
1N5987B 1N5987B 2.85 3.0 3.15 5 95 2000 0.25 50 1.0 167
1N5988B 1N5988B 3.13 3.3 3.46 5 95 2200 0.25 25 1.0 152
1N5990B 1N5990B 3.7 3.9 4.09 5 90 2400 0.25 10 1.0 128
1N5991B 1N5991B 4.08 4.3 4.51 5 88 2500 0.25 5.0 1.0 116
1N5992B 1N5992B 4.46 4.7 4.93 5 70 2200 0.25 3.0 1.5 106
1N5993B 1N5993B 4.84 5.1 5.35 5 50 2050 0.25 2.0 2.0 98
1N5994B 1N5994B 5.32 5.6 5.88 5 25 1800 0.25 2.0 3.0 89
1N5995B 1N5995B 5.89 6.2 6.51 5 10 1300 0.25 1.0 4.0 81
1N5996B 1N5996B 6.46 6.8 7.14 5 8.0 750 0.25 1.0 5.2 74
1N5997B 1N5997B 7.12 7.5 7.87 5 7.0 600 0.25 0.5 6.0 67
1N5998B 1N5998B 7.79 8.2 8.61 5 7.0 600 0.25 0.5 6.5 61
1N5999B 1N5999B 8.64 9.1 9.55 5 10 600 0.25 0.1 7.0 55
1N6000B 1N6000B 9.5 10 10.5 5 15 600 0.25 0.1 8.0 50
1N6001B 1N6001B 10.45 11 11.55 5 18 600 0.25 0.1 8.4 45
1N6002B 1N6002B 11.4 12 12.6 5 22 600 0.25 0.1 9.1 42
1N6004B 1N6004B 14.25 15 15.75 5 32 600 0.25 0.1 11 33
1N6007B 1N6007B 19 20 21 5 48 600 0.25 0.1 15 25
2. TOLERANCE AND VOLTAGE DESIGNATION
Tolerance designation – Device tolerance of ±5% is indicated by a “B” suffix.
3. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8″ lead
length.
4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I Z(ac) =
0.1 IZ(dc) with the ac frequency = 1.0 kHz.
5. MAXIMUM ZENER CURRENT RATINGS (IZM)
This data was calculated using nominal voltages. The maximum current handling capability on a worst case basis is limited by the actual
zener voltage at the operation point and the power derating curve.

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 1N5985B Series

0.7
HEAT
SINKS

POWER DISSIPATION (WATTS)

0.6

PD, STEADY STATE

0.5

0.4
3/8" 3/8"
0.3

0.2

0.1

0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)

Figure 1. Steady State Power Derating

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183
 1N5985B Series

APPLICATION NOTE — ZENER VOLTAGE

θ JL , JUNCTIONTOLEAD THERMAL RESISTANCE (°C/W)

Since the actual voltage available from a given zener 500
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions 400
in order to calculate its value. The following procedure is L L
recommended: 300
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA. 2.4-60V
200
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
62-200V
is the power dissipation. The value for θLA will vary and 100
depends on the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
0
and for printed circuit board wiring. 0 0.2 0.4 0.6 0.8 1
The temperature of the lead can also be measured using a L, LEAD LENGTH TO HEAT SINK (INCH)
thermocouple placed on the lead as close as possible to the Figure 2. Typical Thermal Resistance
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of 1000
7000
pulsed operation once steady-state conditions are achieved. 5000 TYPICAL LEAKAGE CURRENT
Using the measured value of TL, the junction temperature AT 80% OF NOMINAL
2000 BREAKDOWN VOLTAGE
may be determined by:
1000
TJ = TL + ∆TJL. 700
500
∆TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power: 200
∆TJL = θJLPD. 100
70
For worst-case design, using expected limits of IZ, limits 50
I R , LEAKAGE CURRENT (µ A)

of PD and the extremes of TJ(∆TJ) may be estimated.

20
Changes in voltage, VZ, can then be found from:
10
∆V = θVZTJ. 7
5
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5. 2
Under high power-pulse operation, the zener voltage will 1
vary with time and may also be affected significantly by the 0.7
0.5
zener resistance. For best regulation, keep current +125°C
excursions as low as possible. 0.2
Surge limitations are given in Figure 7. They are lower 0.1
than would be expected by considering only junction 0.07
0.05
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device 0.02
degradation should the limits of Figure 7 be exceeded. 0.01
0.007 +25°C
0.005

0.002
0.001
3 4 5 6 7 8 9 10 11 12 13 14 15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current

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 1N5985B Series

TEMPERATURE COEFFICIENTS
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)

+12 100
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

70
+10 50
+8 30

+6 20

RANGE VZ@IZ(NOTE 2)
+4 10
7
+2
5
RANGE VZ@IZT
0 (NOTE 2) 3
-2 2

-4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4a. Range for Units to 12 Volts Figure 4b. Range for Units 12 to 100 Volts

200 +6
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

VZ@IZ
180 +4 TA=25°C

160 +2
20mA

140 0
0.01mA
VZ@IZT 1mA
120 -2
(NOTE 2) NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
100 -4
120 130 140 150 160 170 180 190 200 3 4 5 6 7 8
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts Figure 5. Effect of Zener Current

1000 100
TA=25°C 70
500 TA=25°C
0V BIAS 50
0 BIAS
200 30
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

100 20
1V BIAS
50 1VOLTBIAS
10
20 7
50% OF VZBIAS
10 50% OF 5
VZBIAS
5 3
2
2
1 1
1 2 5 10 20 50 100 120 140 160 180 190 200 220
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4–100 Volts Figure 6b. Typical Capacitance 120–200 Volts

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 1N5985B Series

100
70 RECTANGULAR
WAVEFORM
Ppk , PEAK SURGE POWER (WATTS)
50 11V-91V NONREPETITIVE
TJ=25°C PRIOR TO
30 5% DUTY CYCLE 1.8V-10V NONREPETITIVE INITIAL PULSE
20

10 10% DUTY CYCLE

7
5
20% DUTY CYCLE
3
2

1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000

PW, PULSE WIDTH (ms)

Figure 7a. Maximum Surge Power 1.8–91 Volts

1000 1000
700 500 TJ=25°C
500 VZ=2.7V iZ(rms)=0.1 IZ(dc)
Ppk , PEAK SURGE POWER (WATTS)

RECTANGULAR

ZZ , DYNAMIC IMPEDANCE (OHMS)

300 WAVEFORM, TJ=25°C f=60Hz
200 200
47V
100 100
70 27V
50 100-200VOLTS NONREPETITIVE 50
30
20 20
10 10 6.2V
7
5 5
3
2 2
1 1
0.01 0.1 1 10 100 1000 0.1 0.2 0.5 1 2 5 10 20 50 100
PW, PULSE WIDTH (ms) IZ, ZENER CURRENT (mA)

Figure 7b. Maximum Surge Power DO-204AH Figure 8. Effect of Zener Current on
100–200 Volts Zener Impedance

1000 1000
700 TJ=25°C
MAXIMUM
500 iZ(rms)=0.1 IZ(dc)
ZZ , DYNAMIC IMPEDANCE (OHMS)

500 MINIMUM
IZ=1mA f=60Hz
I F , FORWARD CURRENT (mA)

200 200
100 100
70 5mA
50 50

20 20mA 20 75°C
10 10
7 25°C
5 5 150°C

2 0°C
2
1 1
1 2 3 5 7 10 20 30 50 70 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. Typical Forward Characteristics

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 1N5985B Series

20

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VZ, ZENER VOLTAGE (VOLTS)

Figure 11. Zener Voltage versus Zener Current — VZ = 1 thru 16 Volts

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
VZ, ZENER VOLTAGE (VOLTS)

Figure 12. Zener Voltage versus Zener Current — VZ = 15 thru 30 Volts

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 1N5985B Series

10
TA=25°

I Z , ZENER CURRENT (mA)

0.1

0.01
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105
VZ, ZENER VOLTAGE (VOLTS)

Figure 13. Zener Voltage versus Zener Current — VZ = 30 thru 105 Volts

10

1
I Z , ZENER CURRENT (mA)

0.1

0.01
110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260
VZ, ZENER VOLTAGE (VOLTS)

Figure 14. Zener Voltage versus Zener Current — VZ = 110 thru 220 Volts

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188
BZX79C2V4RL Series

500 mW DO-35 Hermetically

Sealed Glass Zener Voltage
Regulators
This is a complete series of 500 mW Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead http://onsemi.com
hermetically sealed glass package that offers protection in all common
environmental conditions.
Cathode Anode
Specification Features:
• Zener Voltage Range – 2.4 V to 33 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• DO–204AH (DO–35) Package – Smaller than Conventional
DO–204AA Package
• Double Slug Type Construction
• Metallurgical Bonded Construction AXIAL LEAD
CASE 299
Mechanical Characteristics: GLASS
CASE: Double slug type, hermetically sealed glass
FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM
readily solderable
L
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 79C
230°C, 1/16″ from the case for 10 seconds xxx
YWW
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any L = Assembly Location
79Cxxx = Device Code
MAXIMUM RATINGS (Note 1.) = (See Table Next Page)
Y = Year
Rating Symbol Value Unit WW = Work Week
Max. Steady State Power Dissipation PD 500 mW
@ TL ≤ 75°C, Lead Length = 3/8″
Derate above 75°C 4.0 mW/°C
ORDERING INFORMATION

Operating and Storage TJ, Tstg –65 to °C Device Package Shipping

Temperature Range +200
BZX79CxxxRL Axial Lead 5000/Tape & Reel
1. Some part number series have lower JEDEC registered ratings.
BZX79CxxxRL2* Axial Lead 5000/Tape & Reel

* The “2” suffix refers to 26 mm tape spacing.

 Semiconductor Components Industries, LLC, 2001 189 Publication Order Number:

May, 2001 – Rev. 1 BZX79C2V4RL/D
 BZX79C2V4RL Series

ELECTRICAL CHARACTERISTICS (TL = 30°C unless I

otherwise noted, VF = 1.5 V Max @ IF = 100 mA for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
VZ VR V
VBR Temperature Coefficient of VBR (Typical) IR VF
IZT
IR Reverse Leakage Current (TA = 25°C) @ VR
VR Breakdown Voltage
IF Forward Current
VF Forward Voltage @ IF
C Capacitance (Typical)
Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 100 mA for all types)

Zener Voltage (Note 3.) ZZT (Note 4.) Leakage Current VBR C
@ IZT VZ = 0
0,
VZ (Volts) @ IZT (f = 1.0 kHz) IR @ VR mV/
C f = 1.0 MHz
Device Device
(Note 2.) Marking Min Nom Max mA  µA Volts Min Max pF
BZX79C2V4RL 79C2V4 2.28 2.4 2.52 5 100 100 1 –3.5 0 255
BZX79C2V7RL 79C2V7 2.57 2.7 2.84 5 100 75 1 –3.5 0 230
BZX79C3V0RL 79C3V0 2.85 3.0 3.15 5 95 50 1 –3.5 0 215
BZX79C3V3RL 79C3V3 3.14 3.3 3.47 5 95 25 1 –3.5 0 200
BZX79C3V6RL 79C3V6 3.42 3.6 3.78 5 90 15 1 –3.5 0 185
BZX79C3V9RL 79C3V9 3.71 3.9 4.10 5 90 10 1 –3.5 0.3 175
BZX79C4V7RL 79C4V7 4.47 4.7 4.94 5 80 3 2 –3.5 0.2 130
BZX79C5V1RL 79C5V1 4.85 5.1 5.36 5 60 2 2 –2.7 1.2 110
BZX79C5V6RL 79C5V6 5.32 5.6 5.88 5 40 1 2 –2.0 2.5 95
BZX79C6V2RL 79C6V2 5.89 6.2 6.51 5 10 3 4 0.4 3.7 90
BZX79C6V8RL 79C6V8 6.46 6.8 7.19 5 15 2 4 1.2 4.5 85
BZX79C7V5RL 79C7V5 7.13 7.5 7.88 5 15 1 5 2.5 5.3 80
BZX79C8V2RL 79C8V2 7.79 8.2 8.61 5 15 0.7 5 3.2 6.2 75
BZX79C10RL 79C10 9.5 10 10.5 5 20 0.2 7 4.5 8.0 70
BZX79C12RL 79C12 11.4 12 12.6 5 25 0.1 8 6.0 10 65
BZX79C15RL 79C15 14.25 15 15.75 5 30 0.05 10.5 9.2 13 55
BZX79C16RL 79C16 15.2 16 16.8 5 40 0.05 11.2 10.4 14 52
BZX79C18RL 79C18 17.1 18 18.9 5 45 0.05 12.6 12.9 16 47
BZX79C22RL 79C22 20.9 22 23.1 5 55 0.05 15.4 16.4 20 34
BZX79C24RL 79C24 22.8 24 25.2 5 70 0.05 16.8 18.4 22 33
BZX79C27RL 79C27 25.65 27 28.35 5 80 0.05 18.9 – 23.5 30
BZX79C30RL 79C30 28.5 30 31.5 5 80 0.05 21 – 26 27
BZX79C33RL 79C33 31.35 33 34.65 5 80 0.05 23.1 – 29 25
2. TOLERANCE AND VOLTAGE DESIGNATION
Tolerance designation – the type numbers listed have zener voltage min/max limits as shown.
3. REVERSE ZENER VOLTAGE (VZ) MEASUREMENT
Reverse zener voltage is measured under pulse conditions such that TJ is no more than 2°C above TA.
4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I Z(ac) =
0.1 IZ(dc) with the ac frequency = 1.0 kHz.

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 BZX79C2V4RL Series

0.7
HEAT
SINKS

POWER DISSIPATION (WATTS)

0.6

PD, STEADY STATE

0.5

0.4
3/8" 3/8"
0.3

0.2

0.1

0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)

Figure 1. Steady State Power Derating

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 BZX79C2V4RL Series

APPLICATION NOTE — ZENER VOLTAGE

θ JL , JUNCTIONTOLEAD THERMAL RESISTANCE (°C/W)

Since the actual voltage available from a given zener 500
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions 400
in order to calculate its value. The following procedure is L L
recommended: 300
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA. 2.4-60V
200
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
62-200V
is the power dissipation. The value for θLA will vary and 100
depends on the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
0
and for printed circuit board wiring. 0 0.2 0.4 0.6 0.8 1
The temperature of the lead can also be measured using a L, LEAD LENGTH TO HEAT SINK (INCH)
thermocouple placed on the lead as close as possible to the Figure 2. Typical Thermal Resistance
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of 1000
7000
pulsed operation once steady-state conditions are achieved. 5000 TYPICAL LEAKAGE CURRENT
Using the measured value of TL, the junction temperature AT 80% OF NOMINAL
2000 BREAKDOWN VOLTAGE
may be determined by:
1000
TJ = TL + ∆TJL. 700
500
∆TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power: 200
∆TJL = θJLPD. 100
70
For worst-case design, using expected limits of IZ, limits 50
I R , LEAKAGE CURRENT (µ A)

of PD and the extremes of TJ(∆TJ) may be estimated.

20
Changes in voltage, VZ, can then be found from:
10
∆V = θVZTJ. 7
5
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5. 2
Under high power-pulse operation, the zener voltage will 1
vary with time and may also be affected significantly by the 0.7
0.5
zener resistance. For best regulation, keep current +125°C
excursions as low as possible. 0.2
Surge limitations are given in Figure 7. They are lower 0.1
than would be expected by considering only junction 0.07
0.05
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device 0.02
degradation should the limits of Figure 7 be exceeded. 0.01
0.007 +25°C
0.005

0.002
0.001
3 4 5 6 7 8 9 10 11 12 13 14 15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current

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 BZX79C2V4RL Series

TEMPERATURE COEFFICIENTS
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)

+12 100
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

70
+10 50
+8 30

+6 20

RANGE VZ@IZ(NOTE 2)
+4 10
7
+2
5
RANGE VZ@IZT
0 (NOTE 2) 3
-2 2

-4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4a. Range for Units to 12 Volts Figure 4b. Range for Units 12 to 100 Volts

200 +6
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

VZ@IZ
180 +4 TA=25°C

160 +2
20mA

140 0
0.01mA
VZ@IZT 1mA
120 -2
(NOTE 2) NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
100 -4
120 130 140 150 160 170 180 190 200 3 4 5 6 7 8
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts Figure 5. Effect of Zener Current

1000 100
TA=25°C 70
500 TA=25°C
0V BIAS 50
0 BIAS
200 30
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

100 20
1V BIAS
50 1VOLTBIAS
10
20 7
50% OF VZBIAS
10 50% OF 5
VZBIAS
5 3
2
2
1 1
1 2 5 10 20 50 100 120 140 160 180 190 200 220
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4–100 Volts Figure 6b. Typical Capacitance 120–200 Volts

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 BZX79C2V4RL Series

100
70 RECTANGULAR
WAVEFORM
Ppk , PEAK SURGE POWER (WATTS)
50 11V-91V NONREPETITIVE
TJ=25°C PRIOR TO
30 5% DUTY CYCLE 1.8V-10V NONREPETITIVE INITIAL PULSE
20

10 10% DUTY CYCLE

7
5
20% DUTY CYCLE
3
2

1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000

PW, PULSE WIDTH (ms)

Figure 7a. Maximum Surge Power 1.8–91 Volts

1000 1000
700 500 TJ=25°C
500 VZ=2.7V iZ(rms)=0.1 IZ(dc)
Ppk , PEAK SURGE POWER (WATTS)

RECTANGULAR

ZZ , DYNAMIC IMPEDANCE (OHMS)

300 WAVEFORM, TJ=25°C f=60Hz
200 200
47V
100 100
70 27V
50 100-200VOLTS NONREPETITIVE 50
30
20 20
10 10 6.2V
7
5 5
3
2 2
1 1
0.01 0.1 1 10 100 1000 0.1 0.2 0.5 1 2 5 10 20 50 100
PW, PULSE WIDTH (ms) IZ, ZENER CURRENT (mA)

Figure 7b. Maximum Surge Power DO-204AH Figure 8. Effect of Zener Current on
100–200 Volts Zener Impedance

1000 1000
700 TJ=25°C
MAXIMUM
500 iZ(rms)=0.1 IZ(dc)
ZZ , DYNAMIC IMPEDANCE (OHMS)

500 MINIMUM
IZ=1mA f=60Hz
I F , FORWARD CURRENT (mA)

200 200
100 100
70 5mA
50 50

20 20mA 20 75°C
10 10
7 25°C
5 5 150°C

2 0°C
2
1 1
1 2 3 5 7 10 20 30 50 70 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. Typical Forward Characteristics

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 BZX79C2V4RL Series

20

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VZ, ZENER VOLTAGE (VOLTS)

Figure 11. Zener Voltage versus Zener Current — VZ = 1 thru 16 Volts

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
VZ, ZENER VOLTAGE (VOLTS)

Figure 12. Zener Voltage versus Zener Current — VZ = 15 thru 30 Volts

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 BZX79C2V4RL Series

10
TA=25°

I Z , ZENER CURRENT (mA)

0.1

0.01
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105
VZ, ZENER VOLTAGE (VOLTS)

Figure 13. Zener Voltage versus Zener Current — VZ = 30 thru 105 Volts

10

1
I Z , ZENER CURRENT (mA)

0.1

0.01
110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260
VZ, ZENER VOLTAGE (VOLTS)

Figure 14. Zener Voltage versus Zener Current — VZ = 110 thru 220 Volts

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196
1N4678 Series

500 mW DO-35 Hermetically

Sealed Glass Zener Voltage
Regulators
This is a complete series of 500 mW Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead http://onsemi.com
hermetically sealed glass package that offers protection in all common
environmental conditions.
Cathode Anode
Specification Features:
• Zener Voltage Range – 1.8 V to 27 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• DO–204AH (DO–35) Package – Smaller than Conventional
DO–204AA Package
• Double Slug Type Construction
• Metallurgical Bonded Construction AXIAL LEAD
CASE 299
Mechanical Characteristics: GLASS
CASE: Double slug type, hermetically sealed glass
FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM
readily solderable L
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 1N
4x
230°C, 1/16″ from the case for 10 seconds xx
YWW
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any L = Assembly Location
1N4xxx = Device Code
MAXIMUM RATINGS (Note 1.) = (See Table Next Page)
Y = Year
Rating Symbol Value Unit WW = Work Week
Max. Steady State Power Dissipation PD 500 mW
@ TL ≤ 75°C, Lead Length = 3/8″
Derate above 75°C 4.0 mW/°C
ORDERING INFORMATION

Operating and Storage TJ, Tstg –65 to °C Device Package Shipping

Temperature Range +200
1N4xxx Axial Lead 3000 Units/Box
1. Some part number series have lower JEDEC registered ratings.
1N4xxxRL Axial Lead 5000/Tape & Reel

1N4xxxRL2 * Axial Lead 5000/Tape & Reel

1N4xxxTA Axial Lead 5000/Ammo Pack

1N4xxxTA2 * Axial Lead 5000/Tape & Reel

1N4xxxRR1  Axial Lead 3000/Tape & Reel

1N4xxxRR2  Axial Lead 3000/Tape & Reel

* The “2” suffix refers to 26 mm tape spacing.

 Polarity band up with cathode lead off first
 Polarity band down with cathode lead off first

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001 197 Publication Order Number:

May, 2001 – Rev. 1 1N4678/D
 1N4678 Series

Low level oxide passivated zener diodes for applications

requiring extremely low operating currents, low leakage, I
and sharp breakdown voltage. IF

ELECTRICAL CHARACTERISTICS (TA = 25°C unless

otherwise noted, VF = 1.5 V Max @ IF = 100 mA for all types)
Symbol Parameter
VZ VR V
VZ Reverse Zener Voltage @ IZT IR VF
IZT
IZT Reverse Current

VZ Reverse Zener Voltage Change
IZM Maximum Zener Current
IR Reverse Leakage Current @ VR
VR Breakdown Voltage
Zener Voltage Regulator
IF Forward Current
VF Forward Voltage @ IF

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 1N4678 Series

ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 100 mA for all types)

Zener Voltage (Note 3.) Leakage Current (Note 4.)

IZM
VZ
VZ (Volts) @ IZT IR @ VR (Note 5.) (Note 6.)
Device Device
(Note 2.) Marking Min Nom Max A µA Max Volts mA Volts
1N4678 1N4678 1.71 1.8 1.89 50 7.5 1 120 0.7
1N4679 1N4679 1.9 2.0 2.1 50 5 1 110 0.7
1N4680 1N4680 2.09 2.2 2.31 50 5 1 100 0.75
1N4681 1N4681 2.28 2.4 2.52 50 2 1 95 0.8
1N4682 1N4682 2.565 2.7 2.835 50 1 1 90 0.85
1N4683 1N4683 2.85 3.0 3.15 50 0.8 1 85 0.9
1N4684 1N4684 3.135 3.3 3.465 50 7.5 1.5 80 0.95
1N4685 1N4685 3.42 3.6 3.78 50 7.5 2 75 0.95
1N4686 1N4686 3.705 3.9 4.095 50 5.0 2 70 0.97
1N4687 1N4687 4.085 4.3 4.515 50 4.0 2 65 0.99
1N4688 1N4688 4.465 4.7 4.935 50 10 3 60 0.99
1N4689 1N4689 4.845 5.1 5.355 50 10 3 55 0.97
1N4690 1N4690 5.32 5.6 5.88 50 10 4 50 0.96
1N4691 1N4691 5.89 6.2 6.51 50 10 5 45 0.95
1N4692 1N4692 6.46 6.8 7.14 50 10 5.1 35 0.9
1N4693 1N4693 7.125 7.5 7.875 50 10 5.7 31.8 0.75
1N4694 1N4694 7.79 8.2 8.61 50 1 6.2 29 0.5
1N4695 1N4695 8.265 8.7 9.135 50 1 6.6 27.4 0.1
1N4696 1N4696 8.645 9.1 9.555 50 1 6.9 26.2 0.08
1N4697 1N4697 9.5 10 10.5 50 1 7.6 24.8 0.1
1N4698 1N4698 10.45 11 11.55 50 0.05 8.4 21.6 0.11
1N4699 1N4699 11.4 12 12.6 50 0.05 9.1 20.4 0.12
1N4700 1N4700 12.35 13 13.65 50 0.05 9.8 19 0.13
1N4701 1N4701 13.3 14 14.7 50 0.05 10.6 17.5 0.14
1N4702 1N4702 14.25 15 15.75 50 0.05 11.4 16.3 0.15
1N4703 1N4703 15.2 16 16.8 50 0.05 12.1 15.4 0.16
1N4704 1N4704 16.15 17 17.85 50 0.05 12.9 14.5 0.17
1N4705 1N4705 17.1 18 18.9 50 0.05 13.6 13.2 0.18
1N4707 1N4707 19 20 21 50 0.01 15.2 11.9 0.2
1N4711 1N4711 25.65 27 28.35 50 0.01 20.4 8.8 0.27
2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a standard tolerance of ±5% on the nominal zener voltage.
3. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8″ lead
length.
4. REVERSE LEAKAGE CURRENT (IR)
Reverse leakage currents are guaranteed and measured at VR shown on the table.
5. MAXIMUM ZENER CURRENT RATINGS (IZM)
Maximum zener current ratings are based on maximum zener voltage of the individual units and JEDEC 250 mW rating.
6. MAXIMUM VOLTAGE CHANGE (
VZ)
Voltage change is equal to the difference between VZ at 100 A and at 10 A.

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 1N4678 Series

0.7
HEAT
SINKS

POWER DISSIPATION (WATTS)

0.6

PD, STEADY STATE

0.5

0.4
3/8" 3/8"
0.3

0.2

0.1

0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)

Figure 1. Steady State Power Derating

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200
 1N4678 Series

APPLICATION NOTE — ZENER VOLTAGE

θ JL , JUNCTIONTOLEAD THERMAL RESISTANCE (°C/W)

Since the actual voltage available from a given zener 500
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions 400
in order to calculate its value. The following procedure is L L
recommended: 300
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA. 2.4-60V
200
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
62-200V
is the power dissipation. The value for θLA will vary and 100
depends on the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
0
and for printed circuit board wiring. 0 0.2 0.4 0.6 0.8 1
The temperature of the lead can also be measured using a L, LEAD LENGTH TO HEAT SINK (INCH)
thermocouple placed on the lead as close as possible to the Figure 2. Typical Thermal Resistance
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of 1000
7000
pulsed operation once steady-state conditions are achieved. 5000 TYPICAL LEAKAGE CURRENT
Using the measured value of TL, the junction temperature AT 80% OF NOMINAL
2000 BREAKDOWN VOLTAGE
may be determined by:
1000
TJ = TL + ∆TJL. 700
500
∆TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power: 200
∆TJL = θJLPD. 100
70
For worst-case design, using expected limits of IZ, limits 50
I R , LEAKAGE CURRENT (µ A)

of PD and the extremes of TJ(∆TJ) may be estimated.

20
Changes in voltage, VZ, can then be found from:
10
∆V = θVZTJ. 7
5
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5. 2
Under high power-pulse operation, the zener voltage will 1
vary with time and may also be affected significantly by the 0.7
0.5
zener resistance. For best regulation, keep current +125°C
excursions as low as possible. 0.2
Surge limitations are given in Figure 7. They are lower 0.1
than would be expected by considering only junction 0.07
0.05
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device 0.02
degradation should the limits of Figure 7 be exceeded. 0.01
0.007 +25°C
0.005

0.002
0.001
3 4 5 6 7 8 9 10 11 12 13 14 15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current

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 1N4678 Series

TEMPERATURE COEFFICIENTS
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)

+12 100
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

70
+10 50
+8 30

+6 20

RANGE VZ@IZ(NOTE 2)
+4 10
7
+2
5
RANGE VZ@IZT
0 (NOTE 2) 3
-2 2

-4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4a. Range for Units to 12 Volts Figure 4b. Range for Units 12 to 100 Volts

200 +6
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

VZ@IZ
180 +4 TA=25°C

160 +2
20mA

140 0
0.01mA
VZ@IZT 1mA
120 -2
(NOTE 2) NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
100 -4
120 130 140 150 160 170 180 190 200 3 4 5 6 7 8
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts Figure 5. Effect of Zener Current

1000 100
TA=25°C 70
500 TA=25°C
0V BIAS 50
0 BIAS
200 30
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

100 20
1V BIAS
50 1VOLTBIAS
10
20 7
50% OF VZBIAS
10 50% OF 5
VZBIAS
5 3
2
2
1 1
1 2 5 10 20 50 100 120 140 160 180 190 200 220
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4–100 Volts Figure 6b. Typical Capacitance 120–200 Volts

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 1N4678 Series

100
70 RECTANGULAR
WAVEFORM
Ppk , PEAK SURGE POWER (WATTS)
50 11V-91V NONREPETITIVE
TJ=25°C PRIOR TO
30 5% DUTY CYCLE 1.8V-10V NONREPETITIVE INITIAL PULSE
20

10 10% DUTY CYCLE

7
5
20% DUTY CYCLE
3
2

1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000

PW, PULSE WIDTH (ms)

Figure 7a. Maximum Surge Power 1.8–91 Volts

1000 1000
700 500 TJ=25°C
500 VZ=2.7V iZ(rms)=0.1 IZ(dc)
Ppk , PEAK SURGE POWER (WATTS)

RECTANGULAR

ZZ , DYNAMIC IMPEDANCE (OHMS)

300 WAVEFORM, TJ=25°C f=60Hz
200 200
47V
100 100
70 27V
50 100-200VOLTS NONREPETITIVE 50
30
20 20
10 10 6.2V
7
5 5
3
2 2
1 1
0.01 0.1 1 10 100 1000 0.1 0.2 0.5 1 2 5 10 20 50 100
PW, PULSE WIDTH (ms) IZ, ZENER CURRENT (mA)

Figure 7b. Maximum Surge Power DO-204AH Figure 8. Effect of Zener Current on
100–200 Volts Zener Impedance

1000 1000
700 TJ=25°C
MAXIMUM
500 iZ(rms)=0.1 IZ(dc)
ZZ , DYNAMIC IMPEDANCE (OHMS)

500 MINIMUM
IZ=1mA f=60Hz
I F , FORWARD CURRENT (mA)

200 200
100 100
70 5mA
50 50

20 20mA 20 75°C
10 10
7 25°C
5 5 150°C

2 0°C
2
1 1
1 2 3 5 7 10 20 30 50 70 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. Typical Forward Characteristics

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 1N4678 Series

20

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VZ, ZENER VOLTAGE (VOLTS)

Figure 11. Zener Voltage versus Zener Current — VZ = 1 thru 16 Volts

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
VZ, ZENER VOLTAGE (VOLTS)

Figure 12. Zener Voltage versus Zener Current — VZ = 15 thru 30 Volts

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 1N4678 Series

10
TA=25°

I Z , ZENER CURRENT (mA)

0.1

0.01
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105
VZ, ZENER VOLTAGE (VOLTS)

Figure 13. Zener Voltage versus Zener Current — VZ = 30 thru 105 Volts

10

1
I Z , ZENER CURRENT (mA)

0.1

0.01
110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260
VZ, ZENER VOLTAGE (VOLTS)

Figure 14. Zener Voltage versus Zener Current — VZ = 110 thru 220 Volts

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1N5221B Series

500 mW DO-35 Hermetically

Sealed Glass Zener Voltage
Regulators
This is a complete series of 500 mW Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead http://onsemi.com
hermetically sealed glass package that offers protection in all common
environmental conditions.
Cathode Anode
Specification Features:
• Zener Voltage Range – 2.4 V to 91 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• DO–204AH (DO–35) Package – Smaller than Conventional
DO–204AA Package
• Double Slug Type Construction
• Metallurgical Bonded Construction AXIAL LEAD
CASE 299
Mechanical Characteristics: GLASS
CASE: Double slug type, hermetically sealed glass
FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM
readily solderable L
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 1N
52
230°C, 1/16″ from the case for 10 seconds xxB
YWW
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any L = Assembly Location
1N52xxB = Device Code
MAXIMUM RATINGS (Note 1.) = (See Table Next Page)
Y = Year
Rating Symbol Value Unit WW = Work Week
Max. Steady State Power Dissipation PD 500 mW
@ TL ≤ 75°C, Lead Length = 3/8″
Derate above 75°C 4.0 mW/°C
ORDERING INFORMATION

Operating and Storage TJ, Tstg –65 to °C Device Package Shipping

Temperature Range +200
1N52xxB Axial Lead 3000 Units/Box
1. Some part number series have lower JEDEC registered ratings.
1N52xxBRL Axial Lead 5000/Tape & Reel

1N52xxBRL2 * Axial Lead 5000/Tape & Reel

1N52xxBRA1 Axial Lead 3000/Ammo Pack

1N52xxBTA Axial Lead 5000/Ammo Pack

1N52xxBTA2 * Axial Lead 5000/Ammo Pack

1N52xxBRR1  Axial Lead 3000/Tape & Reel

1N52xxBRR2  Axial Lead 3000/Tape & Reel

* The “2” suffix refers to 26 mm tape spacing.

 Polarity band up with cathode lead off first
 Polarity band down with cathode lead off first

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001 206 Publication Order Number:

May, 2001 – Rev. 2 1N5221B/D
 1N5221B Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, Based on dc measurements at thermal
equilibrium; lead length = 3/8″; thermal resistance of heat sink IF
= 30°C/W, VF = 1.1 V Max @ IF = 200 mA for all types)
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current VZ VR V
IR VF
ZZT Maximum Zener Impedance @ IZT IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Breakdown Voltage
IF Forward Current Zener Voltage Regulator
VF Forward Voltage @ IF
VZ Maximum Zener Voltage Temperature Coefficient

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, Based on dc measurements at thermal equilibrium; lead
length = 3/8″; thermal resistance of heat sink = 30°C/W, VF = 1.1 V Max @ IF = 200 mA for all types)

Zener Voltage (Note 3.) Zener Impedance (Note 4.) Leakage Current
VZ
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR (Note 5.)
Device Device
(Note 2.) Marking Min Nom Max mA   mA µA Volts %/
C
1N5221B 1N5221B 2.28 2.4 2.52 20 30 1200 0.25 100 1 –0.085
1N5222B 1N5222B 2.375 2.5 2.625 20 30 1250 0.25 100 1 –0.085
1N5223B 1N5223B 2.565 2.7 2.835 20 30 1300 0.25 75 1 –0.08
1N5224B 1N5224B 2.66 2.8 2.94 20 30 1400 0.25 75 1 –0.08
1N5225B 1N5225B 2.85 3.0 3.15 20 29 1600 0.25 50 1 –0.075
1N5226B 1N5226B 3.14 3.3 3.46 20 28 1600 0.25 25 1 –0.07
1N5227B 1N5227B 3.42 3.6 3.78 20 24 1700 0.25 15 1 –0.065
1N5228B 1N5228B 3.71 3.9 4.09 20 23 1900 0.25 10 1 –0.06
1N5229B 1N5229B 4.09 4.3 4.51 20 22 2000 0.25 5 1 ±0.055
1N5230B 1N5230B 4.47 4.7 4.93 20 19 1900 0.25 5 2 ±0.03
1N5231B 1N5231B 4.85 5.1 5.35 20 17 1600 0.25 5 2
0.03
1N5232B 1N5232B 5.32 5.6 5.88 20 11 1600 0.25 5 3 0.038
1N5233B 1N5233B 5.7 6.0 6.3 20 7 1600 0.25 5 3.5 0.038
1N5234B 1N5234B 5.89 6.2 6.51 20 7 1000 0.25 5 4 0.045
1N5235B 1N5235B 6.46 6.8 7.14 20 5 750 0.25 3 5 0.05
2. TOLERANCE
The JEDEC type numbers shown indicate a tolerance of ±5%.
3. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8″ lead
length.
4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I Z(ac) =
0.1 IZ(dc) with the ac frequency = 60 Hz.
5. TEMPERATURE COEFFICIENT (VZ) *
Test conditions for temperature coefficient are as follows:
A. IZT = 7.5 mA, T1 = 25°C, T2 = 125°C (1N5221B through 1N5242B)
B. IZT = Rated IZT, T1 = 25°C, T2 = 125°C (1N5243B through 1N5281B)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.
* For more information on special selections contact your nearest ON Semiconductor representative.

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 1N5221B Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, Based on dc measurements at thermal equilibrium; lead
length = 3/8″; thermal resistance of heat sink = 30°C/W, VF = 1.1 V Max @ IF = 200 mA for all types) (continued)

Zener Voltage (Note 7.) Zener Impedance (Note 8.) Leakage Current
VZ
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR (Note 9.)
Device Device
(Note 6.) Marking Min Nom Max mA   mA µA Volts %/
C
1N5236B 1N5236B 7.13 7.5 7.87 20 6 500 0.25 3 6 0.058
1N5237B 1N5237B 7.79 8.2 8.61 20 8 500 0.25 3 6.5 0.062
1N5238B 1N5238B 8.265 8.7 9.135 20 8 600 0.25 3 6.5 0.065
1N5239B 1N5239B 8.65 9.1 9.55 20 10 600 0.25 3 7 0.068
1N5240B 1N5240B 9.5 10 10.5 20 17 600 0.25 3 8 0.075
1N5241B 1N5241B 10.45 11 11.55 20 22 600 0.25 2 8.4 0.076
1N5242B 1N5242B 11.4 12 12.6 20 30 600 0.25 1 9.1 0.077
1N5243B 1N5243B 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 0.079
1N5244B 1N5244B 13.3 14 14.7 9 15 600 0.25 0.1 10 0.082
1N5245B 1N5245B 14.25 15 15.75 8.5 16 600 0.25 0.1 11 0.082
1N5246B 1N5246B 15.2 16 16.8 7.8 17 600 0.25 0.1 12 0.083
1N5247B 1N5247B 16.15 17 17.85 7.4 19 600 0.25 0.1 13 0.084
1N5248B 1N5248B 17.1 18 18.9 7 21 600 0.25 0.1 14 0.085
1N5249B 1N5249B 18.05 19 19.95 6.6 23 600 0.25 0.1 14 0.086
1N5250B 1N5250B 19 20 21 6.2 25 600 0.25 0.1 15 0.086
1N5251B 1N5251B 20.9 22 23.1 5.6 29 600 0.25 0.1 17 0.087
1N5252B 1N5252B 22.8 24 25.2 5.2 33 600 0.25 0.1 18 0.088
1N5253B 1N5253B 23.75 25 26.25 5.0 35 600 0.25 0.1 19 0.089
1N5254B 1N5254B 25.65 27 28.35 4.6 41 600 0.25 0.1 21 0.090
1N5255B 1N5255B 26.6 28 29.4 4.5 44 600 0.25 0.1 21 0.091
1N5256B 1N5256B 28.5 30 31.5 4.2 49 600 0.25 0.1 23 0.091
1N5257B 1N5257B 31.35 33 34.65 3.8 58 700 0.25 0.1 25 0.092
1N5258B 1N5258B 34.2 36 37.8 3.4 70 700 0.25 0.1 27 0.093
1N5259B 1N5259B 37.05 39 40.95 3.2 80 800 0.25 0.1 30 0.094
1N5260B 1N5260B 40.85 43 45.15 3.0 93 900 0.25 0.1 33 0.095
1N5261B 1N5261B 44.65 47 49.35 2.7 105 1000 0.25 0.1 36 0.095
1N5262B 1N5262B 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 0.096
1N5263B 1N5263B 53.2 56 58.8 2.2 150 1300 0.25 0.1 43 0.096
1N5264B 1N5264B 57 60 63 2.1 170 1400 0.25 0.1 46 0.097
1N5265B 1N5265B 58.9 62 65.1 2.0 185 1400 0.25 0.1 47 0.097
1N5266B 1N5266B 64.6 68 71.4 1.8 230 1600 0.25 0.1 52 0.097
1N5267B 1N5267B 71.25 75 78.75 1.7 270 1700 0.25 0.1 56 0.098
1N5268B 1N5268B 77.9 82 86.1 1.5 330 2000 0.25 0.1 62 0.098
1N5269B 1N5269B 82.65 87 91.35 1.4 370 2200 0.25 0.1 68 0.099
1N5270B 1N5270B 86.45 91 95.55 1.4 400 2300 0.25 0.1 69 0.099
6. TOLERANCE
The JEDEC type numbers shown indicate a tolerance of ±5%.
7. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8″ lead
length.
8. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I Z(ac) =
0.1 IZ(dc) with the ac frequency = 60 Hz.
9. TEMPERATURE COEFFICIENT (VZ) *
Test conditions for temperature coefficient are as follows:
A. IZT = 7.5 mA, T1 = 25°C, T2 = 125°C (1N5221B through 1N5242B)
B. IZT = Rated IZT, T1 = 25°C, T2 = 125°C (1N5243B through 1N5281B)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.
* For more information on special selections contact your nearest ON Semiconductor representative.

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 1N5221B Series

0.7
HEAT
SINKS

POWER DISSIPATION (WATTS)

0.6

PD, STEADY STATE

0.5

0.4
3/8" 3/8"
0.3

0.2

0.1

0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)

Figure 1. Steady State Power Derating

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 1N5221B Series

APPLICATION NOTE — ZENER VOLTAGE

θ JL , JUNCTIONTOLEAD THERMAL RESISTANCE (°C/W)

Since the actual voltage available from a given zener 500
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions 400
in order to calculate its value. The following procedure is L L
recommended: 300
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA. 2.4-60V
200
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
62-200V
is the power dissipation. The value for θLA will vary and 100
depends on the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
0
and for printed circuit board wiring. 0 0.2 0.4 0.6 0.8 1
The temperature of the lead can also be measured using a L, LEAD LENGTH TO HEAT SINK (INCH)
thermocouple placed on the lead as close as possible to the Figure 2. Typical Thermal Resistance
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of 1000
7000
pulsed operation once steady-state conditions are achieved. 5000 TYPICAL LEAKAGE CURRENT
Using the measured value of TL, the junction temperature AT 80% OF NOMINAL
2000 BREAKDOWN VOLTAGE
may be determined by:
1000
TJ = TL + ∆TJL. 700
500
∆TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power: 200
∆TJL = θJLPD. 100
70
For worst-case design, using expected limits of IZ, limits 50
I R , LEAKAGE CURRENT (µ A)

of PD and the extremes of TJ(∆TJ) may be estimated.

20
Changes in voltage, VZ, can then be found from:
10
∆V = θVZTJ. 7
5
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5. 2
Under high power-pulse operation, the zener voltage will 1
vary with time and may also be affected significantly by the 0.7
0.5
zener resistance. For best regulation, keep current +125°C
excursions as low as possible. 0.2
Surge limitations are given in Figure 7. They are lower 0.1
than would be expected by considering only junction 0.07
0.05
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device 0.02
degradation should the limits of Figure 7 be exceeded. 0.01
0.007 +25°C
0.005

0.002
0.001
3 4 5 6 7 8 9 10 11 12 13 14 15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current

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 1N5221B Series

TEMPERATURE COEFFICIENTS
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)

+12 100
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

70
+10 50
+8 30

+6 20

RANGE VZ@IZ(NOTE 2)
+4 10
7
+2
5
RANGE VZ@IZT
0 (NOTE 2) 3
-2 2

-4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4a. Range for Units to 12 Volts Figure 4b. Range for Units 12 to 100 Volts

200 +6
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

VZ@IZ
180 +4 TA=25°C

160 +2
20mA

140 0
0.01mA
VZ@IZT 1mA
120 -2
(NOTE 2) NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
100 -4
120 130 140 150 160 170 180 190 200 3 4 5 6 7 8
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts Figure 5. Effect of Zener Current

1000 100
TA=25°C 70
500 TA=25°C
0V BIAS 50
0 BIAS
200 30
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

100 20
1V BIAS
50 1VOLTBIAS
10
20 7
50% OF VZBIAS
10 50% OF 5
VZBIAS
5 3
2
2
1 1
1 2 5 10 20 50 100 120 140 160 180 190 200 220
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4–100 Volts Figure 6b. Typical Capacitance 120–200 Volts

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 1N5221B Series

100
70 RECTANGULAR
WAVEFORM
Ppk , PEAK SURGE POWER (WATTS)
50 11V-91V NONREPETITIVE
TJ=25°C PRIOR TO
30 5% DUTY CYCLE 1.8V-10V NONREPETITIVE INITIAL PULSE
20

10 10% DUTY CYCLE

7
5
20% DUTY CYCLE
3
2

1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000

PW, PULSE WIDTH (ms)

Figure 7a. Maximum Surge Power 1.8–91 Volts

1000 1000
700 500 TJ=25°C
500 VZ=2.7V iZ(rms)=0.1 IZ(dc)
Ppk , PEAK SURGE POWER (WATTS)

RECTANGULAR

ZZ , DYNAMIC IMPEDANCE (OHMS)

300 WAVEFORM, TJ=25°C f=60Hz
200 200
47V
100 100
70 27V
50 100-200VOLTS NONREPETITIVE 50
30
20 20
10 10 6.2V
7
5 5
3
2 2
1 1
0.01 0.1 1 10 100 1000 0.1 0.2 0.5 1 2 5 10 20 50 100
PW, PULSE WIDTH (ms) IZ, ZENER CURRENT (mA)

Figure 7b. Maximum Surge Power DO-204AH Figure 8. Effect of Zener Current on
100–200 Volts Zener Impedance

1000 1000
700 TJ=25°C
MAXIMUM
500 iZ(rms)=0.1 IZ(dc)
ZZ , DYNAMIC IMPEDANCE (OHMS)

500 MINIMUM
IZ=1mA f=60Hz
I F , FORWARD CURRENT (mA)

200 200
100 100
70 5mA
50 50

20 20mA 20 75°C
10 10
7 25°C
5 5 150°C

2 0°C
2
1 1
1 2 3 5 7 10 20 30 50 70 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. Typical Forward Characteristics

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 1N5221B Series

20

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VZ, ZENER VOLTAGE (VOLTS)

Figure 11. Zener Voltage versus Zener Current — VZ = 1 thru 16 Volts

10
TA=25°
I Z , ZENER CURRENT (mA)

0.1

0.01
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
VZ, ZENER VOLTAGE (VOLTS)

Figure 12. Zener Voltage versus Zener Current — VZ = 15 thru 30 Volts

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 1N5221B Series

10
TA=25°

I Z , ZENER CURRENT (mA)

0.1

0.01
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105
VZ, ZENER VOLTAGE (VOLTS)

Figure 13. Zener Voltage versus Zener Current — VZ = 30 thru 105 Volts

10

1
I Z , ZENER CURRENT (mA)

0.1

0.01
110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260
VZ, ZENER VOLTAGE (VOLTS)

Figure 14. Zener Voltage versus Zener Current — VZ = 110 thru 220 Volts

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1N4728A Series

1 Watt DO-41 Hermetically

Sealed Glass Zener Voltage
Regulator Diodes
This is a complete series of 1 Watt Zener diode with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead http://onsemi.com
hermetically sealed glass package that offers protection in all common
environmental conditions.

Specification Features:
• Zener Voltage Range – 3.3 V to 91 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• DO–41 (DO–204AL) Package
• Double Slug Type Construction AXIAL LEAD
• Metallurgical Bonded Construction CASE 59
• Oxide Passivated Die
GLASS

Mechanical Characteristics: L
CASE: Double slug type, hermetically sealed glass 1N
47
FINISH: All external surfaces are corrosion resistant and leads are xxA
YWW
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: L = Assembly Location
230°C, 1/16″ from the case for 10 seconds 1N47xxA = Device Code
POLARITY: Cathode indicated by polarity band Y = Year
MOUNTING POSITION: Any WW = Work Week

MAXIMUM RATINGS
Rating Symbol Value Unit
Max. Steady State Power Dissipation PD 1.0 Watt Cathode Anode
@ TL ≤ 50°C, Lead Length = 3/8″
Derated above 50°C 6.67 mW/°C
Operating and Storage TJ, Tstg – 65 to °C ORDERING INFORMATION (1.)(NO TAG)
Temperature Range +200
Device Package Shipping

1N47xxA Axial Lead 2000 Units/Box

1N47xxARL Axial Lead 6000/Tape & Reel

1N47xxARL2 Axial Lead 6000/Tape & Reel

1N47xxATA Axial Lead 4000/Ammo Pack

1N47xxATA2 Axial Lead 4000/Ammo Pack

NOTES:
1. The “2” suffix refers to 26 mm tape spacing.

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2000 215 Publication Order Number:

November, 2000 – Rev. 1 1N4728A/D
 1N4728A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 1.2 V Max., IF = 200 mA for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
VZ VR V
IZK Reverse Current IR VF
IZT
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Breakdown Voltage
IF Forward Current
VF Forward Voltage @ IF
Zener Voltage Regulator
Ir Surge Current @ TA = 25°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max, IF = 200 mA for all types)

Zener Voltage (3.)(4.) Zener Impedance (5.) Leakage Current

VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR Ir (6.)
JEDEC
Device (2.) Min Nom Max (mA) () () (mA) (µA Max) (Volts) (mA)
1N4728A 3.14 3.3 3.47 76 10 400 1 100 1 1380
1N4729A 3.42 3.6 3.78 69 10 400 1 100 1 1260
1N4730A 3.71 3.9 4.10 64 9 400 1 50 1 1190
1N4731A 4.09 4.3 4.52 58 9 400 1 10 1 1070
1N4732A 4.47 4.7 4.94 53 8 500 1 10 1 970
1N4733A 4.85 5.1 5.36 49 7 550 1 10 1 890
1N4734A 5.32 5.6 5.88 45 5 600 1 10 2 810
1N4735A 5.89 6.2 6.51 41 2 700 1 10 3 730
1N4736A 6.46 6.8 7.14 37 3.5 700 1 10 4 660
1N4737A 7.13 7.5 7.88 34 4 700 0.5 10 5 605
1N4738A 7.79 8.2 8.61 31 4.5 700 0.5 10 6 550
1N4739A 8.65 9.1 9.56 28 5 700 0.5 10 7 500
1N4740A 9.50 10 10.50 25 7 700 0.25 10 7.6 454
1N4741A 10.45 11 11.55 23 8 700 0.25 5 8.4 414
1N4742A 11.40 12 12.60 21 9 700 0.25 5 9.1 380
1N4743A 12.4 13 13.7 19 10 700 0.25 5 9.9 344
1N4744A 14.3 15 15.8 17 14 700 0.25 5 11.4 304
1N4745A 15.2 16 16.8 15.5 16 700 0.25 5 12.2 285
TOLERANCE AND TYPE NUMBER DESIGNATION
2. The JEDEC type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
SPECIALS AVAILABLE INCLUDE:
3. Nominal zener voltages between the voltages shown and tighter voltage tolerances. For detailed information on price, availability, and
delivery, contact your nearest ON Semiconductor representative.
ZENER VOLTAGE (VZ) MEASUREMENT
4. ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C
± 1°C, 3/8″ from the diode body.
ZENER IMPEDANCE (ZZ) DERIVATION
5. The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the
dc zener current (IZT or IZK) is superimposed on IZT or IZK.
SURGE CURRENT (IR) NON-REPETITIVE
6. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equiv-
alent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device
capability is as described in Figure 5 of the General Data – DO-41 Glass.

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 1N4728A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max, IF = 200 mA for all types) (continued)

Zener Voltage (8.)(9.) Zener Impedance (10.) Leakage Current

VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR Ir (11.)
JEDEC
Device (7.) Min Nom Max (mA) () () (mA) (µA Max) (Volts) (mA)
1N4746A 17.1 18 18.9 14 20 750 0.25 5 13.7 250
1N4747A 19.0 20 21.0 12.5 22 750 0.25 5 15.2 225
1N4748A 20.9 22 23.1 11.5 23 750 0.25 5 16.7 205
1N4749A 22.8 24 25.2 10.5 25 750 0.25 5 18.2 190
1N4750A 25.7 27 28.4 9.5 35 750 0.25 5 20.6 170
1N4751A 28.5 30 31.5 8.5 40 1000 0.25 5 22.8 150
1N4752A 31.4 33 34.7 7.5 45 1000 0.25 5 25.1 135
1N4753A 34.2 36 37.8 7 50 1000 0.25 5 27.4 125
1N4754A 37.1 39 41.0 6.5 60 1000 0.25 5 29.7 115
1N4755A 40.9 43 45.2 6 70 1500 0.25 5 32.7 110
1N4756A 44.7 47 49.4 5.5 80 1500 0.25 5 35.8 95
1N4757A 48.5 51 53.6 5 95 1500 0.25 5 38.8 90
1N4758A 53.2 56 58.8 4.5 110 2000 0.25 5 42.6 80
1N4759A 58.9 62 65.1 4 125 2000 0.25 5 47.1 70
1N4760A 64.6 68 71.4 3.7 150 2000 0.25 5 51.7 65
1N4761A 71.3 75 78.8 3.3 175 2000 0.25 5 56 60
1N4762A 77.9 82 86.1 3 200 3000 0.25 5 62.2 55
1N4763A 86.5 91 95.6 2.8 250 3000 0.25 5 69.2 50
TOLERANCE AND TYPE NUMBER DESIGNATION
7. The JEDEC type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
SPECIALS AVAILABLE INCLUDE:
8. Nominal zener voltages between the voltages shown and tighter voltage tolerances. For detailed information on price, availability, and
delivery, contact your nearest ON Semiconductor representative.
ZENER VOLTAGE (VZ) MEASUREMENT
9. ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ± 1°C,
3/8″ from the diode body.
ZENER IMPEDANCE (ZZ) DERIVATION
10. The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the
dc zener current (IZT or IZK) is superimposed on IZT or IZK.
SURGE CURRENT (IR) NON-REPETITIVE
11. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent
sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability
is as described in Figure 5 of the General Data – DO-41 Glass.
PD , MAXIMUM STEADY STATE POWER DISSIPATION (WATTS)

1.25
L = LEAD LENGTH
L = 1″ TO HEAT SINK
1 L = 1/8″
L = 3/8″

0.75

0.5

0.25

0 20 40 60 80 100 120 140 160 180 200

TL, LEAD TEMPERATURE (°C)

Figure 1. Power Temperature Derating Curve

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 1N4728A Series

a. Range for Units to 12 Volts b. Range for Units to 12 to 100 Volts

+12 100
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

70
+10 50
+8 30
20
+6

+4 10 RANGE VZ@IZT
7
+2 5
RANGE VZ@IZT
0 3
-2 2

-4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 2. Temperature Coefficients

(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
θ JL , JUNCTIONTOLEAD THERMAL RESISTANCE (mV/°C/W)

175 +6

150 θVZ , TEMPERATURE COEFFICIENT (mV/°C) VZ@IZ

+4 TA=25°C
125
+2 20mA
100

75 0
0.01mA
50 1mA
-2 NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
25 NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
0 -4
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 3 4 5 6 7 8
L, LEAD LENGTH TO HEAT SINK (INCHES) VZ, ZENER VOLTAGE (VOLTS)

Figure 3. Typical Thermal Resistance Figure 4. Effect of Zener Current

versus Lead Length

100
70 RECTANGULAR
Ppk , PEAK SURGE POWER (WATTS)

50 11V-100V NONREPETITIVE WAVEFORM

TJ=25°C PRIOR TO
30 5% DUTY CYCLE 3.3V-10V NONREPETITIVE INITIAL PULSE
20

10 10% DUTY CYCLE

7
5
20% DUTY CYCLE
3
2

1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.

Figure 5. Maximum Surge Power

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 1N4728A Series

1000 1000
TJ = 25°C 700 TJ = 25°C
500
VZ = 2.7 V iZ(rms) = 0.1 IZ(dc) 500 iZ(rms) = 0.1 IZ(dc)
Z Z , DYNAMIC IMPEDANCE (OHMS)

Z Z , DYNAMIC IMPEDANCE (OHMS)

f = 60 Hz IZ = 1 mA f = 60 Hz
200 200
47 V
100 100
70 5 mA
50 27 V 50

20 20 20 mA
10 6.2 V 10
7
5 5

2 2
1 1
0.1 0.2 0.5 1 2 5 10 20 50 100 1 2 3 5 7 10 20 30 50 70 100
IZ, ZENER CURRENT (mA) VZ, ZENER VOLTAGE (V)
Figure 6. Effect of Zener Current Figure 7. Effect of Zener Voltage
on Zener Impedance on Zener Impedance

10000 400
7000 300
5000
TYPICAL LEAKAGE CURRENT 200
2000 AT 80% OF NOMINAL 0 V BIAS
BREAKDOWN VOLTAGE 100
C, CAPACITANCE (pF)

1000 1 V BIAS
700
500 50

200
20
100
70
50 10
8 50% OF BREAKDOWN BIAS
I R , LEAKAGE CURRENT (µ A)

20
4
10 1 2 5 10 20 50 100
7
5 VZ, NOMINAL VZ (VOLTS)

Figure 9. Typical Capacitance versus VZ

2
1
0.7 1000
0.5 MINIMUM
+125°C 500
MAXIMUM
0.2
I F , FORWARD CURRENT (mA)

200
0.1
0.07 100
0.05
50
0.02 20 75°C
0.01 10
0.007 +25°C
0.005 25°C
5 150°C
0°C
0.002 2
0.001 1
3 4 5 6 7 8 9 10 11 12 13 14 15 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, NOMINAL ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 8. Typical Leakage Current Figure 10. Typical Forward Characteristics

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 1N4728A Series

APPLICATION NOTE

Since the actual voltage available from a given zener ∆TJL is the increase in junction temperature above the lead
diode is temperature dependent, it is necessary to determine temperature and may be found as follows:
junction temperature under any set of operating conditions ∆TJL = θJLPD.
in order to calculate its value. The following procedure is
θJL may be determined from Figure 3 for dc power
recommended:
conditions. For worst-case design, using expected limits of
Lead Temperature, TL, should be determined from:
IZ, limits of PD and the extremes of TJ(∆TJ) may be
TL = θLAPD + TA. estimated. Changes in voltage, VZ, can then be found from:
θLA is the lead-to-ambient thermal resistance (°C/W) and PD ∆V = θVZ ∆TJ.
is the power dissipation. The value for θLA will vary and
θVZ, the zener voltage temperature coefficient, is found
depends on the device mounting method. θLA is generally 30
from Figure 2.
to 40°C/W for the various clips and tie points in common use
Under high power-pulse operation, the zener voltage will
and for printed circuit board wiring.
vary with time and may also be affected significantly by the
The temperature of the lead can also be measured using a
zener resistance. For best regulation, keep current
thermocouple placed on the lead as close as possible to the
excursions as low as possible.
tie point. The thermal mass connected to the tie point is
Surge limitations are given in Figure 5. They are lower
normally large enough so that it will not significantly
than would be expected by considering only junction
respond to heat surges generated in the diode as a result of
temperature, as current crowding effects cause temperatures
pulsed operation once steady-state conditions are achieved.
to be extremely high in small spots, resulting in device
Using the measured value of TL, the junction temperature
degradation should the limits of Figure 5 be exceeded.
may be determined by:
TJ = TL + ∆TJL.

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BZX85C3V3RL Series

1 Watt DO-41 Hermetically

Sealed Glass Zener Voltage
Regulators
This is a complete series of 1 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities http://onsemi.com
of silicon–oxide passivated junctions. All this in an axial–lead
hermetically sealed glass package that offers protection in all common
environmental conditions. Cathode Anode

Specification Features:
• Zener Voltage Range – 3.3 V to 85 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• DO–41 (DO–204AL) Package
• Double Slug Type Construction
• Metallurgical Bonded Construction
• Oxide Passivated Die AXIAL LEAD
CASE 59
GLASS
Mechanical Characteristics:
CASE: Double slug type, hermetically sealed glass
FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM
readily solderable
L
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: BZX
85C
230°C, 1/16″ from the case for 10 seconds xxx
POLARITY: Cathode indicated by polarity band YWW

MOUNTING POSITION: Any

L = Assembly Location
BZX85Cxxx = Device Code
MAXIMUM RATINGS = (See Table Next Page)
Y = Year
Rating Symbol Value Unit
WW = Work Week
Max. Steady State Power Dissipation PD 1 W
@ TL ≤ 50°C, Lead Length = 3/8″
Derate above 50°C 6.67 mW/°C
ORDERING INFORMATION
Operating and Storage TJ, Tstg –65 to °C
Temperature Range +200 Device Package Shipping

BZX85CxxxRL Axial Lead 6000/Tape & Reel

BZX85CxxxRL2 Axial Lead 6000/Tape & Reel

* The “2” suffix refers to 26 mm tape spacing.

 Semiconductor Components Industries, LLC, 2001 221 Publication Order Number:

May, 2001 – Rev. 0 BZX85C3V3RL/D
 BZX85C3V3RL Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 1.2 V Max., IF = 200 mA for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
VZ VR V
IZK Reverse Current IR VF
IZT
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Breakdown Voltage
IF Forward Current
VF Forward Voltage @ IF
Zener Voltage Regulator
IR Surge Current @ TA = 25°C

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 BZX85C3V3RL Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max., IF = 200 mA for all types)

Zener Voltage (Notes 2. and 3.) Zener Impedance (Note 4.) Leakage Current
IR
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR (Note 5.)
Device Device
(Note 1.) Marking Min Nom Max mA   mA µA Max Volts mA
BZX85C3V3RL BZX85C3V3 3.1 3.3 3.5 80 20 400 1 1 60 1380
BZX85C3V6RL BZX85C3V6 3.4 3.6 3.8 60 15 500 1 1 30 1260
BZX85C3V9RL BZX85C3V9 3.7 3.9 4.1 60 15 500 1 1 5 1190
BZX85C4V3RL BZX85C4V3 4.0 4.3 4.6 50 13 500 1 1 3 1070
BZX85C4V7RL BZX85C4V7 4.4 4.7 5.0 45 13 600 1 1.5 3 970
BZX85C5V1RL BZX85C5V1 4.8 5.1 5.4 45 10 500 1 2 1 890
BZX85C5V6RL BZX85C5V6 5.2 5.6 6.0 45 7 400 1 2 1 810
BZX85C6V2RL BZX85C6V2 5.8 6.2 6.6 35 4 300 1 3 1 730
BZX85C6V8RL BZX85C6V8 6.4 6.8 7.2 35 3.5 300 1 4 1 660
BZX85C7V5RL BZX85C7V5 7.0 7.45 7.9 35 3 200 0.5 4.5 1 605
BZX85C8V2RL BZX85C8V2 7.7 8.2 8.7 25 5 200 0.5 5 1 550
BZX85C9V1RL BZX85C9V1 8.5 9.05 9.6 25 5 200 0.5 6.5 1 500
BZX85C10RL BZX85C10 9.4 10 10.6 25 7 200 0.5 7 0.5 454
BZX85C12RL BZX85C12 11.4 12.05 12.7 20 9 350 0.5 8.4 0.5 380
BZX85C13RL BZX85C13 12.4 13.25 14.1 20 10 400 0.5 9.1 0.5 344
BZX85C15RL BZX85C15 13.8 14.7 15.6 15 15 500 0.5 10.5 0.5 304
BZX85C16RL BZX85C16 15.3 16.2 17.1 15 15 500 0.5 11 0.5 285
BZX85C18RL BZX85C18 16.8 17.95 19.1 15 20 500 0.5 12.5 0.5 250
BZX85C22RL BZX85C22 20.8 22.05 23.3 10 25 600 0.5 15.5 0.5 205
BZX85C24RL BZX85C24 22.8 24.2 25.6 10 25 600 0.5 17 0.5 190
BZX85C27RL BZX85C27 25.1 27 28.9 8 30 750 0.25 19 0.5 170
BZX85C30RL BZX85C30 28 30 32 8 30 1000 0.25 21 0.5 150
BZX85C33RL BZX85C33 31 33 35 8 35 1000 0.25 23 0.5 135
BZX85C36RL BZX85C36 34 36 38 8 40 1000 0.25 25 0.5 125
BZX85C43RL BZX85C43 40 43 46 6 50 1000 0.25 30 0.5 110
BZX85C47RL BZX85C47 44 47 50 4 90 1500 0.25 33 0.5 95
BZX85C62RL BZX85C62 58 62 66 4 125 2000 0.25 43 0.5 70
BZX85C75RL BZX85C75 70 75 80 4 150 2000 0.25 51 0.5 60
BZX85C82RL BZX85C82 77 82 87 2.7 200 3000 0.25 56 0.5 55
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The type numbers listed have zener voltage min/max limits as shown and have a standard tolerance on the nominal zener voltage of ±5%.
2. AVAILABILITY OF SPECIAL DIODES
For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage
tolerances, contact your nearest ON Semiconductor representative.
3. ZENER VOLTAGE (VZ) MEASUREMENT
VZ measured after the test current has been applied to 40 ±10 msec, while maintaining the lead temperature (TL) at 30°C ±1°C, 3/8″ from
the diode body.
4. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 1 kHz cycle AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.
5. SURGE CURRENT (IR) NON–REPETITIVE
The rating listed in the electrical characteristics table is maximum peak, non–repetitive, reverse surge current of 1/2 square wave or eqivalent
sine wave pulse of 1/120 second duration superimposed on the test current, IZT. However, actual device capability is as described in Figure
5 of the General Data – DO–41 Glass.

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 BZX85C3V3RL Series

PD, STEADY STATE POWER DISSIPATION (WATTS)

1.25
L = LEAD LENGTH
L = 1″ TO HEAT SINK
1 L = 1/8″
L = 3/8″

0.75

0.5

0.25

0 20 40 60 80 100 120 140 160 180 200

TL, LEAD TEMPERATURE (°C)

Figure 1. Power Temperature Derating Curve

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 BZX85C3V3RL Series

a. Range for Units to 12 Volts b. Range for Units to 12 to 100 Volts

+12 100
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

θVZ , TEMPERATURE COEFFICIENT (mV/°C)

70
+10 50
+8 30
20
+6

+4 10 RANGE VZ@IZT
7
+2 5
RANGE VZ@IZT
0 3
-2 2

-4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 2. Temperature Coefficients

(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
θ JL , JUNCTIONTOLEAD THERMAL RESISTANCE (mV/°C/W)

175 +6

150 θVZ , TEMPERATURE COEFFICIENT (mV/°C) VZ@IZ

+4 TA=25°C
125
+2 20mA
100

75 0
0.01mA
50 1mA
-2 NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
25 NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
0 -4
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 3 4 5 6 7 8
L, LEAD LENGTH TO HEAT SINK (INCHES) VZ, ZENER VOLTAGE (VOLTS)

Figure 3. Typical Thermal Resistance Figure 4. Effect of Zener Current

versus Lead Length

100
70 RECTANGULAR
Ppk , PEAK SURGE POWER (WATTS)

50 11V-100V NONREPETITIVE WAVEFORM

TJ=25°C PRIOR TO
30 5% DUTY CYCLE 3.3V-10V NONREPETITIVE INITIAL PULSE
20

10 10% DUTY CYCLE

7
5
20% DUTY CYCLE
3
2

1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.

Figure 5. Maximum Surge Power

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 BZX85C3V3RL Series

1000 1000
TJ = 25°C 700 TJ = 25°C
500
VZ = 2.7 V iZ(rms) = 0.1 IZ(dc) 500 iZ(rms) = 0.1 IZ(dc)
Z Z , DYNAMIC IMPEDANCE (OHMS)

Z Z , DYNAMIC IMPEDANCE (OHMS)

f = 60 Hz IZ = 1 mA f = 60 Hz
200 200
47 V
100 100
70 5 mA
50 27 V 50

20 20 20 mA
10 6.2 V 10
7
5 5

2 2
1 1
0.1 0.2 0.5 1 2 5 10 20 50 100 1 2 3 5 7 10 20 30 50 70 100
IZ, ZENER CURRENT (mA) VZ, ZENER VOLTAGE (V)
Figure 6. Effect of Zener Current Figure 7. Effect of Zener Voltage
on Zener Impedance on Zener Impedance

10000 400
7000 300
5000
TYPICAL LEAKAGE CURRENT 200
2000 AT 80% OF NOMINAL 0 V BIAS
BREAKDOWN VOLTAGE 100
C, CAPACITANCE (pF)

1000 1 V BIAS
700
500 50

200
20
100
70
50 10
8 50% OF BREAKDOWN BIAS
I R , LEAKAGE CURRENT (µ A)

20
4
10 1 2 5 10 20 50 100
7
5 VZ, NOMINAL VZ (VOLTS)

Figure 9. Typical Capacitance versus VZ

2
1
0.7 1000
0.5 MINIMUM
+125°C 500
MAXIMUM
0.2
I F , FORWARD CURRENT (mA)

200
0.1
0.07 100
0.05
50
0.02 20 75°C
0.01 10
0.007 +25°C
0.005 25°C
5 150°C
0°C
0.002 2
0.001 1
3 4 5 6 7 8 9 10 11 12 13 14 15 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, NOMINAL ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 8. Typical Leakage Current Figure 10. Typical Forward Characteristics

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 BZX85C3V3RL Series

APPLICATION NOTE

Since the actual voltage available from a given zener ∆TJL is the increase in junction temperature above the lead
diode is temperature dependent, it is necessary to determine temperature and may be found as follows:
junction temperature under any set of operating conditions ∆TJL = θJLPD.
in order to calculate its value. The following procedure is
θJL may be determined from Figure 3 for dc power
recommended:
conditions. For worst-case design, using expected limits of
Lead Temperature, TL, should be determined from:
IZ, limits of PD and the extremes of TJ(∆TJ) may be
TL = θLAPD + TA. estimated. Changes in voltage, VZ, can then be found from:
θLA is the lead-to-ambient thermal resistance (°C/W) and PD ∆V = θVZ ∆TJ.
is the power dissipation. The value for θLA will vary and
θVZ, the zener voltage temperature coefficient, is found
depends on the device mounting method. θLA is generally 30
from Figure 2.
to 40°C/W for the various clips and tie points in common use
Under high power-pulse operation, the zener voltage will
and for printed circuit board wiring.
vary with time and may also be affected significantly by the
The temperature of the lead can also be measured using a
zener resistance. For best regulation, keep current
thermocouple placed on the lead as close as possible to the
excursions as low as possible.
tie point. The thermal mass connected to the tie point is
Surge limitations are given in Figure 5. They are lower
normally large enough so that it will not significantly
than would be expected by considering only junction
respond to heat surges generated in the diode as a result of
temperature, as current crowding effects cause temperatures
pulsed operation once steady-state conditions are achieved.
to be extremely high in small spots, resulting in device
Using the measured value of TL, the junction temperature
degradation should the limits of Figure 5 be exceeded.
may be determined by:
TJ = TL + ∆TJL.

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1N5913B Series

3 Watt DO-41 Surmetic 30

Zener Voltage Regulators
This is a complete series of 3 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead,
transfer–molded plastic package that offers protection in all common http://onsemi.com
environmental conditions.

Specification Features:
Cathode Anode
• Zener Voltage Range – 3.3 V to 200 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Surge Rating of 98 W @ 1 ms
• Maximum Limits Guaranteed on up to Six Electrical Parameters
• Package No Larger than the Conventional 1 Watt Package

Mechanical Characteristics:
CASE: Void free, transfer–molded, thermosetting plastic AXIAL LEAD
FINISH: All external surfaces are corrosion resistant and leads are CASE 59
readily solderable PLASTIC
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds MARKING DIAGRAM
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any L
1N59
xxB
YYWW
MAXIMUM RATINGS
Rating Symbol Value Unit L = Assembly Location
Max. Steady State Power Dissipation PD 3 W 1N59xxB = Device Code
@ TL = 75°C, Lead Length = 3/8″ = (See Table Next Page)
Derate above 75°C 24 mW/°C YY = Year
WW = Work Week
Steady State Power Dissipation PD 1 W
@ TA = 50°C
Derate above 50°C 6.67 mW/°C
ORDERING INFORMATION
Operating and Storage TJ, Tstg –65 to °C
Temperature Range +200 Device Package Shipping

1N59xxB Axial Lead 2000 Units/Box

1N59xxBRL Axial Lead 6000/Tape & Reel

1N59xxBRR1  Axial Lead 2000/Tape & Reel

1N59xxBRR2  Axial Lead 2000/Tape & Reel

 Polarity band up with cathode lead off first
 Polarity band down with cathode lead off first

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001 228 Publication Order Number:

May, 2001 – Rev. 1 1N5913B/D
 1N5913B Series

ELECTRICAL CHARACTERISTICS I
(TL = 30°C unless otherwise noted,
VF = 1.5 V Max @ IF = 200 mAdc for all types) IF

Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
VZ VR V
ZZT Maximum Zener Impedance @ IZT
IR VF
IZK Reverse Current IZT

ZZK Maximum Zener Impedance @ IZK

IR Reverse Leakage Current @ VR
VR Breakdown Voltage
IF Forward Current
VF Forward Voltage @ IF Zener Voltage Regulator
IZM Maximum DC Zener Current

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 1N5913B Series

ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types)

Zener Voltage (Note 2.) Zener Impedance (Note 3.) Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR IZM
Device Device
(Note 1.) Marking Min Nom Max mA   mA µA Max Volts mA
1N5913B 1N5913B 3.14 3.3 3.47 113.6 10 500 1 100 1 454
1N5917B 1N5917B 4.47 4.7 4.94 79.8 5 500 1 5 1.5 319
1N5919B 1N5919B 5.32 5.6 5.88 66.9 2 250 1 5 3 267
1N5920B 1N5920B 5.89 6.2 6.51 60.5 2 200 1 5 4 241
1N5921B 1N5921B 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220
1N5923B 1N5923B 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182
1N5924B 1N5924B 8.65 9.1 9.56 41.2 4 500 0.5 5 7 164
1N5925B 1N5925B 9.50 10 10.50 37.5 4.5 500 0.25 5 8 150
1N5926B 1N5926B 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136
1N5927B 1N5927B 11.40 12 12.60 31.2 6.5 550 0.25 1 9.1 125
1N5929B 1N5929B 14.25 15 15.75 25.0 9 600 0.25 1 11.4 100
1N5930B 1N5930B 15.20 16 16.80 23.4 10 600 0.25 1 12.2 93
1N5931B 1N5931B 17.10 18 18.90 20.8 12 650 0.25 1 13.7 83
1N5932B 1N5932B 19.00 20 21.00 18.7 14 650 0.25 1 15.2 75
1N5933B 1N5933B 20.90 22 23.10 17.0 17.5 650 0.25 1 16.7 68
1N5934B 1N5934B 22.80 24 25.20 15.6 19 700 0.25 1 18.2 62
1N5935B 1N5935B 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55
1N5936B 1N5936B 28.50 30 31.50 12.5 28 750 0.25 1 22.8 50
1N5937B 1N5937B 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45
1N5938B 1N5938B 34.20 36 37.80 10.4 38 850 0.25 1 27.4 41
1N5940B 1N5940B 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34
1N5941B 1N5941B 44.65 47 49.35 8.0 67 1000 0.25 1 35.8 31
1N5942B 1N5942B 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29
1N5943B 1N5943B 53.20 56 58.80 6.7 86 1300 0.25 1 42.6 26
1N5944B 1N5944B 58.90 62 65.10 6.0 100 1500 0.25 1 47.1 24
1N5945B 1N5945B 64.60 68 71.40 5.5 120 1700 0.25 1 51.7 22
1N5946B 1N5946B 71.25 75 78.75 5.0 140 2000 0.25 1 56 20
1N5947B 1N5947B 77.90 82 86.10 4.6 160 2500 0.25 1 62.2 18
1N5948B 1N5948B 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16
1N5950B 1N5950B 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13
1N5951B 1N5951B 114 120 126 3.1 380 4500 0.25 1 91.2 12
1N5952B 1N5952B 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11
1N5953B 1N5953B 142.5 150 157.5 2.5 600 6000 0.25 1 114 10
1N5954B 1N5954B 152 160 168 2.3 700 6500 0.25 1 121.6 9
1N5955B 1N5955B 171 180 189 2.1 900 7000 0.25 1 136.8 8
1N5956B 1N5956B 190 200 210 1.9 1200 8000 0.25 1 152 7
1. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation – device tolerance of ±5% are indicated by a “B” suffix.
2. ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C,
3/8″ from the diode body.
3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.

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 1N5913B Series

PD, STEADY STATE DISSIPATION (WATTS)

L = LEAD LENGTH
L = 1/8″ TO HEAT SINK
4

L = 3/8″
3

2
L = 1″

0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve

30
θJL(t, D) TRANSIENT THERMAL RESISTANCE

20
D =0.5
JUNCTIONTOLEAD (° C/W)

10
7 0.2
5
0.1
3
0.05 PPK t1
2 t2
0.02 DUTY CYCLE, D =t1/t2
1
0.7 0.01 NOTE: BELOW 0.1 SECOND, THERMAL SINGLE PULSE ∆TJL = θJL (t)PPK
0.5 D=0 RESPONSE CURVE IS APPLICABLE REPETITIVE PULSES ∆TJL = θJL (t,D)PPK
TO ANY LEAD LENGTH (L).
0.3
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
t, TIME (SECONDS)
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch

1K 3
2
AS SPECIFIED IN ELEC. CHAR. TABLE
IR , REVERSE LEAKAGE (µ Adc) @ VR

RECTANGULAR
PPK , PEAK SURGE POWER (WATTS)

NONREPETITIVE 1
500
WAVEFORM 0.5 TA = 125°C
300 TJ=25°C PRIOR 0.2
200 TO INITIAL PULSE 0.1
0.05
100 0.02
0.01
50 0.005
30 0.002 TA = 125°C
20 0.001
0.0005
10 0.0003
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 1 2 5 10 20 50 100 200 400 1000
PW, PULSE WIDTH (ms) NOMINAL VZ (VOLTS)

Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage

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 1N5913B Series

APPLICATION NOTE
Since the actual voltage available from a given zener ∆TJL is the increase in junction temperature above the lead
diode is temperature dependent, it is necessary to determine temperature and may be found from Figure 2 for a train of
junction temperature under any set of operating conditions power pulses (L = 3/8 inch) or from Figure 10 for dc power.
in order to calculate its value. The following procedure is ∆TJL = θJL PD
recommended: For worst-case design, using expected limits of IZ, limits
Lead Temperature, TL, should be determined from: of PD and the extremes of TJ (∆TJ) may be estimated.
TL = θLA PD + TA Changes in voltage, VZ, can then be found from:
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
∆V = θVZ ∆TJ
is the power dissipation. The value for θLA will vary and
depends on the device mounting method. θLA is generally θVZ, the zener voltage temperature coefficient, is found
30–40°C/W for the various clips and tie points in common from Figures 5 and 6.
use and for printed circuit board wiring. Under high power-pulse operation, the zener voltage will
The temperature of the lead can also be measured using a vary with time and may also be affected significantly by the
thermocouple placed on the lead as close as possible to the zener resistance. For best regulation, keep current
tie point. The thermal mass connected to the tie point is excursions as low as possible.
normally large enough so that it will not significantly Data of Figure 2 should not be used to compute surge
respond to heat surges generated in the diode as a result of capability. Surge limitations are given in Figure 3. They are
pulsed operation once steady-state conditions are achieved. lower than would be expected by considering only junction
Using the measured value of TL, the junction temperature temperature, as current crowding effects cause temperatures
may be determined by: to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
TJ = TL + ∆TJL

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 1N5913B Series

TEMPERATURE COEFFICIENT RANGES

(90% of the Units are in the Ranges Indicated)
θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT

10

θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ IZT

1000

8 500

6
200
4
100
2 RANGE
50
0

-2 20

-4 10
3 4 5 6 7 8 9 10 11 12 10 20 50 100 200 400 1000
VZ, ZENER VOLTAGE @ IZT (VOLTS) VZ, ZENER VOLTAGE @ IZT (VOLTS)

Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts

ZENER VOLTAGE versus ZENER CURRENT

(Figures 7, 8 and 9)
100 100
50 50
30 30
20
IZ, ZENER CURRENT (mA)

IZ , ZENER CURRENT (mA)

20
10 10
5 5
3 3
2 2
1 1
0.5 0.5
0.3 0.3
0.2 0.2
0.1 0.1
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 7. VZ = 3.3 thru 10 Volts Figure 8. VZ = 12 thru 82 Volts

θJL, JUNCTIONTOLEAD THERMAL RESISTANCE (° C/W)

10 80

70
5
IZ , ZENER CURRENT (mA)

60

2 50

1 40 L L

30
0.5 TL
20
PRIMARY PATH OF
0.2 10 CONDUCTION IS THROUGH
THE CATHODE LEAD
0.1 0
100 150 200 250 300 350 400 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
VZ, ZENER VOLTAGE (VOLTS) L, LEAD LENGTH TO HEAT SINK (INCH)

Figure 9. VZ = 100 thru 400 Volts Figure 10. Typical Thermal Resistance

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3EZ4.3D5 Series

3 Watt DO-41 Surmetic 30

Zener Voltage Regulators
This is a complete series of 3 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead,
transfer–molded plastic package that offers protection in all common http://onsemi.com
environmental conditions.

Specification Features:
Cathode Anode
• Zener Voltage Range – 4.3 V to 330 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Surge Rating of 98 W @ 1 ms
• Maximum Limits Guaranteed on up to Six Electrical Parameters
• Package No Larger than the Conventional 1 Watt Package

Mechanical Characteristics:
CASE: Void free, transfer–molded, thermosetting plastic AXIAL LEAD
FINISH: All external surfaces are corrosion resistant and leads are CASE 59
readily solderable PLASTIC
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds MARKING DIAGRAM
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any L
3EZx
xxD5
YYWW
MAXIMUM RATINGS
Rating Symbol Value Unit L = Assembly Location
Max. Steady State Power Dissipation PD 3 W 3EZxxxD5 = Device Code
@ TL = 75°C, Lead Length = 3/8″ = (See Table Next Page)
Derate above 75°C 24 mW/°C YY = Year
WW = Work Week
Steady State Power Dissipation PD 1 W
@ TA = 50°C
Derate above 50°C 6.67 mW/°C
ORDERING INFORMATION
Operating and Storage TJ, Tstg –65 to °C
Temperature Range +200 Device Package Shipping

3EZxxxD5 Axial Lead 2000 Units/Box

3EZxxxD5RL Axial Lead 6000/Tape & Reel

3EZxxxD5RR1  Axial Lead 2000/Tape & Reel

3EZxxxD5RR2  Axial Lead 2000/Tape & Reel

 Polarity band up with cathode lead off first
 Polarity band down with cathode lead off first

 Semiconductor Components Industries, LLC, 2001 234 Publication Order Number:

May, 2001 – Rev. 1 3EZ4.3D5/D
 3EZ4.3D5 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
VZ VR V
IZK Reverse Current IR VF
IZT
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Breakdown Voltage
IF Forward Current
VF Forward Voltage @ IF
Zener Voltage Regulator
IZM Maximum DC Zener Current
IR Surge Current @ TA = 25°C

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 3EZ4.3D5 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)

Zener Voltage (Note 2.) Zener Impedance (Note 3.) Leakage Current
IR
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR IZM (Note 4.)
Device Device
(Note 1.) Marking Min Nom Max mA   mA µA Max Volts mA mA
3EZ4.3D5 3EZ4.3D5 4.09 4.3 4.52 174 4.5 400 1 30 1 590 4.1
3EZ6.2D5 3EZ6.2D5 5.89 6.2 6.51 121 1.5 700 1 5 3 435 3.1
3EZ8.2D5 3EZ8.2D5 7.79 8.2 8.61 91 2.3 700 0.5 5 6 330 2.44
3EZ10D5 3EZ10D5 9.50 10 10.5 75 3.5 700 0.25 3 7.6 270 2.0
3EZ13D5 3EZ13D5 12.35 13 13.65 58 4.5 700 0.25 0.5 9.9 208 1.54
3EZ15D5 3EZ15D5 14.25 15 15.75 50 5.5 700 0.25 0.5 11.4 180 1.33
3EZ16D5 3EZ16D5 15.2 16 16.8 47 5.5 700 0.25 0.5 12.2 169 1.25
3EZ18D5 3EZ18D5 17.1 18 18.9 42 6.0 750 0.25 0.5 13.7 150 1.11
3EZ24D5 3EZ24D5 22.8 24 25.2 31 9.0 750 0.25 0.5 18.2 112 0.83
3EZ36D5 3EZ36D5 34.2 36 37.8 21 22 1000 0.25 0.5 27.4 75 0.56
3EZ39D5 3EZ39D5 37.05 39 40.95 19 28 1000 0.25 0.5 29.7 69 0.51
3EZ220D5 3EZ220D5 209 220 231 3.4 1600 9000 0.25 1 167 12 0.09
3EZ240D5 3EZ240D5 228 240 252 3.1 1700 9000 0.25 1 182 11 0.09
3EZ330D5 3EZ330D5 313.5 330 346.5 2.3 2200 9000 0.25 1 251 8 0.06
1. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation – device tolerance of ±5% are indicated by a “5” suffix.
2. ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 40 ms ±10 ms, 3/8″ from the diode body. And an ambient temperature
of 25°C (+8°C, –2°C)
3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.
4. SURGE CURRENT (IR) NON–REPETITIVE
The rating listed in the electrical characteristics table is maximum peak, non–repetitive, reverse surge current of 1/2 square wave or
equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards. However, actual device
capability is as described in Figure 3 of the General Data sheet for Surmetic 30s.

5
L = LEAD LENGTH
L = 1/8″ TO HEAT SINK
PD, STEADY STATE POWER

4
DISSIPATION (WATTS)

L = 3/8″
3

2
L = 1″

0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve

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236
 3EZ4.3D5 Series

30
θJL(t, D) TRANSIENT THERMAL RESISTANCE
20
D =0.5
JUNCTIONTOLEAD (° C/W)

10
7 0.2
5
0.1
3
0.05 PPK t1
2 t2
0.02 DUTY CYCLE, D =t1/t2
1
0.7 0.01 NOTE: BELOW 0.1 SECOND, THERMAL SINGLE PULSE ∆TJL = θJL (t)PPK
0.5 D=0 RESPONSE CURVE IS APPLICABLE REPETITIVE PULSES ∆TJL = θJL (t,D)PPK
TO ANY LEAD LENGTH (L).
0.3
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
t, TIME (SECONDS)
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch

1K 3
2

AS SPECIFIED IN ELEC. CHAR. TABLE

IR , REVERSE LEAKAGE (µ Adc) @ VR
RECTANGULAR
PPK , PEAK SURGE POWER (WATTS)

NONREPETITIVE 1
500
WAVEFORM 0.5 TA = 125°C
300 TJ=25°C PRIOR 0.2
200 TO INITIAL PULSE 0.1
0.05
100 0.02
0.01
50 0.005
30 0.002 TA = 125°C
20 0.001
0.0005
10 0.0003
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 1 2 5 10 20 50 100 200 400 1000
PW, PULSE WIDTH (ms) NOMINAL VZ (VOLTS)

Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage

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 3EZ4.3D5 Series

APPLICATION NOTE
Since the actual voltage available from a given zener ∆TJL is the increase in junction temperature above the lead
diode is temperature dependent, it is necessary to determine temperature and may be found from Figure 2 for a train of
junction temperature under any set of operating conditions power pulses (L = 3/8 inch) or from Figure 10 for dc power.
in order to calculate its value. The following procedure is ∆TJL = θJL PD
recommended: For worst-case design, using expected limits of IZ, limits
Lead Temperature, TL, should be determined from: of PD and the extremes of TJ (∆TJ) may be estimated.
TL = θLA PD + TA Changes in voltage, VZ, can then be found from:
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
∆V = θVZ ∆TJ
is the power dissipation. The value for θLA will vary and
depends on the device mounting method. θLA is generally θVZ, the zener voltage temperature coefficient, is found
30–40°C/W for the various clips and tie points in common from Figures 5 and 6.
use and for printed circuit board wiring. Under high power-pulse operation, the zener voltage will
The temperature of the lead can also be measured using a vary with time and may also be affected significantly by the
thermocouple placed on the lead as close as possible to the zener resistance. For best regulation, keep current
tie point. The thermal mass connected to the tie point is excursions as low as possible.
normally large enough so that it will not significantly Data of Figure 2 should not be used to compute surge
respond to heat surges generated in the diode as a result of capability. Surge limitations are given in Figure 3. They are
pulsed operation once steady-state conditions are achieved. lower than would be expected by considering only junction
Using the measured value of TL, the junction temperature temperature, as current crowding effects cause temperatures
may be determined by: to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
TJ = TL + ∆TJL

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 3EZ4.3D5 Series

TEMPERATURE COEFFICIENT RANGES

(90% of the Units are in the Ranges Indicated)
θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT

10

θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ IZT

1000

8 500

6
200
4
100
2 RANGE
50
0

-2 20

-4 10
3 4 5 6 7 8 9 10 11 12 10 20 50 100 200 400 1000
VZ, ZENER VOLTAGE @ IZT (VOLTS) VZ, ZENER VOLTAGE @ IZT (VOLTS)

Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts

ZENER VOLTAGE versus ZENER CURRENT

(Figures 7, 8 and 9)
100 100
50 50
30 30
20
IZ, ZENER CURRENT (mA)

IZ , ZENER CURRENT (mA)

20
10 10
5 5
3 3
2 2
1 1
0.5 0.5
0.3 0.3
0.2 0.2
0.1 0.1
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 7. VZ = 3.3 thru 10 Volts Figure 8. VZ = 12 thru 82 Volts

θJL, JUNCTIONTOLEAD THERMAL RESISTANCE (° C/W)

10 80

70
5
IZ , ZENER CURRENT (mA)

60

2 50

1 40 L L

30
0.5 TL
20
PRIMARY PATH OF
0.2 10 CONDUCTION IS THROUGH
THE CATHODE LEAD
0.1 0
100 150 200 250 300 350 400 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
VZ, ZENER VOLTAGE (VOLTS) L, LEAD LENGTH TO HEAT SINK (INCH)

Figure 9. VZ = 100 thru 400 Volts Figure 10. Typical Thermal Resistance

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239
MZP4729A Series

3 Watt DO-41 Surmetic 30

Zener Voltage Regulators
This is a complete series of 3 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead,
transfer–molded plastic package that offers protection in all common http://onsemi.com
environmental conditions.

Specification Features:
Cathode Anode
• Zener Voltage Range – 3.6 V to 30 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Surge Rating of 98 W @ 1 ms
• Maximum Limits Guaranteed on up to Six Electrical Parameters
• Package No Larger than the Conventional 1 Watt Package

Mechanical Characteristics:
CASE: Void free, transfer–molded, thermosetting plastic AXIAL LEAD
FINISH: All external surfaces are corrosion resistant and leads are CASE 59
readily solderable PLASTIC
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds MARKING DIAGRAM
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any L
MZP4
7xxA
YYWW
MAXIMUM RATINGS
Rating Symbol Value Unit L = Assembly Location
Max. Steady State Power Dissipation PD 3 W MZP47xxA = Device Code
@ TL = 75°C, Lead Length = 3/8″ = (See Table Next Page)
Derate above 75°C 24 mW/°C YY = Year
WW = Work Week
Steady State Power Dissipation PD 1 W
@ TA = 50°C
Derate above 50°C 6.67 mW/°C
ORDERING INFORMATION
Operating and Storage TJ, Tstg –65 to °C
Temperature Range +200 Device Package Shipping

MZP47xxA Axial Lead 2000 Units/Box

MZP47xxARL Axial Lead 6000/Tape & Reel

MZP47xxATA Axial Lead 4000/Ammo Pack

MZP47xxARR1  Axial Lead 2000/Tape & Reel

MZP47xxARR2  Axial Lead 2000/Tape & Reel

 Polarity band up with cathode lead off first
 Polarity band down with cathode lead off first

 Semiconductor Components Industries, LLC, 2001 240 Publication Order Number:

May, 2001 – Rev. 1 MZP4729A/D
 MZP4729A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
VZ VR V
IZK Reverse Current IR VF
IZT
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Breakdown Voltage
IF Forward Current
VF Forward Voltage @ IF
Zener Voltage Regulator
IR Surge Current @ TA = 25°C

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 MZP4729A Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types)

Zener Voltage (Note 2.) Zener Impedance (Note 3.) Leakage Current
IR
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR (Note 4.)
Device Device
(Note 1.) Marking Min Nom Max mA   mA µA Max Volts mA
MZP4729A MZP4729A 3.42 3.6 3.78 69 10 400 1 100 1 1260
MZP4734A MZP4734A 5.32 5.6 5.88 45 5 600 1 10 2 810
MZP4735A MZP4735A 5.89 6.2 6.51 41 2 700 1 10 3 730
MZP4736A MZP4736A 6.46 6.8 7.14 37 3.5 700 1 10 4 660
MZP4737A MZP4737A 7.13 7.5 7.88 34 4 700 0.5 10 5 605
MZP4738A MZP4738A 7.79 8.2 8.61 31 4.5 700 0.5 10 6 550
MZP4740A MZP4740A 9.50 10 10.50 25 7 700 0.25 10 7.6 454
MZP4741A MZP4741A 10.45 11 11.55 23 8 700 0.25 5 8.4 414
MZP4744A MZP4744A 14.25 15 15.75 17 14 700 0.25 5 11.4 304
MZP4745A MZP4745A 15.20 16 16.80 15.5 16 700 0.25 5 12.2 285
MZP4746A MZP4746A 17.10 18 18.90 14 20 750 0.25 5 13.7 250
MZP4749A MZP4749A 22.80 24 25.20 10.5 25 750 0.25 5 18.2 190
MZP4750A MZP4750A 25.65 27 28.35 9.5 35 750 0.25 5 20.6 170
MZP4751A MZP4751A 28.50 30 31.50 8.5 40 1000 0.25 5 22.8 150
MZP4752A MZP4752A 31.35 33 34.65 7.5 45 1000 0.25 5 25.1 135
MZP4753A MZP4753A 34.20 36 37.80 7.0 50 1000 0.25 5 27.4 125
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2. ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C,
3/8″ from the diode body.
3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.
4. SURGE CURRENT (IR) NON–REPETITIVE
The rating listed in the electrical characteristics table is maximum peak, non–repetitive, reverse surge current of 1/2 square wave or
equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards. However, actual device
capability is as described in Figure 3 of the General Data sheet for Surmetic 30s.

5
L = LEAD LENGTH
L = 1/8″ TO HEAT SINK
POWER DISSIPATION (WATTS)
PD, MAXIMUM STEADY STATE

L = 3/8″
3

2
L = 1″

0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve

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 MZP4729A Series

30
θJL(t, D) TRANSIENT THERMAL RESISTANCE
20
D =0.5
JUNCTIONTOLEAD (° C/W)

10
7 0.2
5
0.1
3
0.05 PPK t1
2 t2
0.02 DUTY CYCLE, D =t1/t2
1
0.7 0.01 NOTE: BELOW 0.1 SECOND, THERMAL SINGLE PULSE ∆TJL = θJL (t)PPK
0.5 D=0 RESPONSE CURVE IS APPLICABLE REPETITIVE PULSES ∆TJL = θJL (t,D)PPK
TO ANY LEAD LENGTH (L).
0.3
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
t, TIME (SECONDS)
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch

1K 3
2

AS SPECIFIED IN ELEC. CHAR. TABLE

IR , REVERSE LEAKAGE (µ Adc) @ VR
RECTANGULAR
PPK , PEAK SURGE POWER (WATTS)

NONREPETITIVE 1
500
WAVEFORM 0.5 TA = 125°C
300 TJ=25°C PRIOR 0.2
200 TO INITIAL PULSE 0.1
0.05
100 0.02
0.01
50 0.005
30 0.002 TA = 125°C
20 0.001
0.0005
10 0.0003
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 1 2 5 10 20 50 100 200 400 1000
PW, PULSE WIDTH (ms) NOMINAL VZ (VOLTS)

Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage

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 MZP4729A Series

APPLICATION NOTE
Since the actual voltage available from a given zener ∆TJL is the increase in junction temperature above the lead
diode is temperature dependent, it is necessary to determine temperature and may be found from Figure 2 for a train of
junction temperature under any set of operating conditions power pulses (L = 3/8 inch) or from Figure 10 for dc power.
in order to calculate its value. The following procedure is ∆TJL = θJL PD
recommended: For worst-case design, using expected limits of IZ, limits
Lead Temperature, TL, should be determined from: of PD and the extremes of TJ (∆TJ) may be estimated.
TL = θLA PD + TA Changes in voltage, VZ, can then be found from:
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
∆V = θVZ ∆TJ
is the power dissipation. The value for θLA will vary and
depends on the device mounting method. θLA is generally θVZ, the zener voltage temperature coefficient, is found
30–40°C/W for the various clips and tie points in common from Figures 5 and 6.
use and for printed circuit board wiring. Under high power-pulse operation, the zener voltage will
The temperature of the lead can also be measured using a vary with time and may also be affected significantly by the
thermocouple placed on the lead as close as possible to the zener resistance. For best regulation, keep current
tie point. The thermal mass connected to the tie point is excursions as low as possible.
normally large enough so that it will not significantly Data of Figure 2 should not be used to compute surge
respond to heat surges generated in the diode as a result of capability. Surge limitations are given in Figure 3. They are
pulsed operation once steady-state conditions are achieved. lower than would be expected by considering only junction
Using the measured value of TL, the junction temperature temperature, as current crowding effects cause temperatures
may be determined by: to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
TJ = TL + ∆TJL

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 MZP4729A Series

TEMPERATURE COEFFICIENT RANGES

(90% of the Units are in the Ranges Indicated)
θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT

10

θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ IZT

1000

8 500

6
200
4
100
2 RANGE
50
0

-2 20

-4 10
3 4 5 6 7 8 9 10 11 12 10 20 50 100 200 400 1000
VZ, ZENER VOLTAGE @ IZT (VOLTS) VZ, ZENER VOLTAGE @ IZT (VOLTS)

Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts

ZENER VOLTAGE versus ZENER CURRENT

(Figures 7, 8 and 9)
100 100
50 50
30 30
20
IZ, ZENER CURRENT (mA)

IZ , ZENER CURRENT (mA)

20
10 10
5 5
3 3
2 2
1 1
0.5 0.5
0.3 0.3
0.2 0.2
0.1 0.1
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 7. VZ = 3.3 thru 10 Volts Figure 8. VZ = 12 thru 82 Volts

θJL, JUNCTIONTOLEAD THERMAL RESISTANCE (° C/W)

10 80

70
5
IZ , ZENER CURRENT (mA)

60

2 50

1 40 L L

30
0.5 TL
20
PRIMARY PATH OF
0.2 10 CONDUCTION IS THROUGH
THE CATHODE LEAD
0.1 0
100 150 200 250 300 350 400 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
VZ, ZENER VOLTAGE (VOLTS) L, LEAD LENGTH TO HEAT SINK (INCH)

Figure 9. VZ = 100 thru 400 Volts Figure 10. Typical Thermal Resistance

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1N5333B Series

5 Watt Surmetic 40
Zener Voltage Regulators
This is a complete series of 5 Watt Zener diodes with tight limits and
better operating characteristics that reflect the superior capabilities of
silicon–oxide passivated junctions. All this in an axial–lead,
transfer–molded plastic package that offers protection in all common http://onsemi.com
environmental conditions.

Specification Features:
Cathode Anode
• Zener Voltage Range – 3.3 V to 200 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Surge Rating of up to 180 W @ 8.3 ms
• Maximum Limits Guaranteed on up to Six Electrical Parameters

Mechanical Characteristics:
CASE: Void free, transfer–molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are AXIAL LEAD
readily solderable CASE 17
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: PLASTIC
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band MARKING DIAGRAM
MOUNTING POSITION: Any
L
1N
MAXIMUM RATINGS 53xxB
YWW
Rating Symbol Value Unit
Max. Steady State Power Dissipation PD 5 W L = Assembly Location
@ TL = 75°C, Lead Length = 3/8″ 1N53xxB = Device Code
Derate above 75°C 40 mW/°C = (See Table Next Page)
Operating and Storage TJ, Tstg –65 to °C Y = Year
Temperature Range +200 WW = Work Week

ORDERING INFORMATION

Device Package Shipping

1N53xxB Axial Lead 1000 Units/Box

1N53xxBRL Axial Lead 4000/Tape & Reel

1N53xxBTA Axial Lead 2000/Ammo Pack

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001 246 Publication Order Number:

May, 2001 – Rev. 1 1N5333B/D
 1N5333B Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
VZ VR V
IZK Reverse Current IR VF
IZT
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Breakdown Voltage
IF Forward Current
VF Forward Voltage @ IF
Zener Voltage Regulator
IR Maximum Surge Current @ TA = 25°C

VZ Reverse Zener Voltage Change
IZM Maximum DC Zener Current

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 1N5333B Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)

Leakage
Zener Voltage (Note 2.) Zener Impedance (Note 2.) Current
IR
VZ IZM
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR (Note 3.) (Note 4.) (Note 5.)
Device Device
(Note 1.) Marking Min Nom Max mA   A µA Max Volts A Volts mA
1N5333B 1N5333B 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440
1N5334B 1N5334B 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320
1N5335B 1N5335B 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220
1N5336B 1N5336B 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100
1N5337B 1N5337B 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010
1N5338B 1N5338B 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930
1N5339B 1N5339B 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865
1N5340B 1N5340B 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790
1N5341B 1N5341B 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765
1N5342B 1N5342B 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700
1N5343B 1N5343B 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630
1N5344B 1N5344B 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580
1N5345B 1N5345B 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545
1N5346B 1N5346B 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520
1N5347B 1N5347B 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475
1N5348B 1N5348B 10.45 11 11.55 125 2.5 125 1 5 8.4 8.0 0.25 430
1N5349B 1N5349B 11.4 12 12.6 100 2.5 125 1 2 9.1 7.5 0.25 395
1N5350B 1N5350B 12.35 13 13.65 100 2.5 100 1 1 9.9 7.0 0.25 365
1N5351B 1N5351B 13.3 14 14.7 100 2.5 75 1 1 10.6 6.7 0.25 340
1N5352B 1N5352B 14.25 15 15.75 75 2.5 75 1 1 11.5 6.3 0.25 315
1N5353B 1N5353B 15.2 16 16.8 75 2.5 75 1 1 12.2 6.0 0.3 295
1N5354B 1N5354B 16.15 17 17.85 70 2.5 75 1 0.5 12.9 5.8 0.35 280
1N5355B 1N5355B 17.1 18 18.9 65 2.5 75 1 0.5 13.7 5.5 0.4 264
1N5356B 1N5356B 18.05 19 19.95 65 3 75 1 0.5 14.4 5.3 0.4 250
1N5357B 1N5357B 19 20 21 65 3 75 1 0.5 15.2 5.1 0.4 237
1N5358B 1N5358B 20.9 22 23.1 50 3.5 75 1 0.5 16.7 4.7 0.45 216
1N5359B 1N5359B 22.8 24 25.2 50 3.5 100 1 0.5 18.2 4.4 0.55 198
1N5360B 1N5360B 23.75 25 26.25 50 4 110 1 0.5 19 4.3 0.55 190
1N5361B 1N5361B 25.65 27 28.35 50 5 120 1 0.5 20.6 4.1 0.6 176
1N5362B 1N5362B 26.6 28 29.4 50 6 130 1 0.5 21.2 3.9 0.6 170
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of ±5%.
2. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK)
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″
to 1/2″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, –2°C).
3. SURGE CURRENT (IR)
Surge current is specified as the maximum allowable peak, non–recurrent square–wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 6 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 7. Mounting contact located
as specified in Note 2 (TA = 25°C +8°C, –2°C).
4. VOLTAGE REGULATION (
VZ)
The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the
electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified
in Note 2 (TA = 25°C +8°C, –2°C).
5. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B–suffix device. The actual
IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75°C at 3/8″ maximum from the device
body.

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 1N5333B Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)

Leakage
Zener Voltage (Note 7.) Zener Impedance (Note 7.) Current
IR
VZ IZM
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR (Note 8.) (Note 9.) (Note 10.)
Device Device
(Note 6.) Marking Min Nom Max mA   A µA Max Volts A Volts mA
1N5363B 1N5363B 28.5 30 31.5 40 8 140 1 0.5 22.8 3.7 0.6 158
1N5364B 1N5364B 31.35 33 34.65 40 10 150 1 0.5 25.1 3.5 0.6 144
1N5365B 1N5365B 34.2 36 37.8 30 11 160 1 0.5 27.4 3.5 0.65 132
1N5366B 1N5366B 37.05 39 40.95 30 14 170 1 0.5 29.7 3.1 0.65 122
1N5367B 1N5367B 40.85 43 45.15 30 20 190 1 0.5 32.7 2.8 0.7 110
1N5368B 1N5368B 44.65 47 49.35 25 25 210 1 0.5 35.8 2.7 0.8 100
1N5369B 1N5369B 48.45 51 53.55 25 27 230 1 0.5 38.8 2.5 0.9 93
1N5370B 1N5370B 53.2 56 58.8 20 35 280 1 0.5 42.6 2.3 1.0 86
1N5371B 1N5371B 57 60 63 20 40 350 1 0.5 45.5 2.2 1.2 79
1N5372B 1N5372B 58.9 62 65.1 20 42 400 1 0.5 47.1 2.1 1.35 76
1N5373B 1N5373B 64.6 68 71.4 20 44 500 1 0.5 51.7 2.0 1.52 70
1N5374B 1N5374B 71.25 75 78.75 20 45 620 1 0.5 56 1.9 1.6 63
1N5375B 1N5375B 77.9 82 86.1 15 65 720 1 0.5 62.2 1.8 1.8 58
1N5376B 1N5376B 82.65 87 91.35 15 75 760 1 0.5 66 1.7 2.0 54.5
1N5377B 1N5377B 86.45 91 95.55 15 75 760 1 0.5 69.2 1.6 2.2 52.5
1N5378B 1N5378B 95 100 105 12 90 800 1 0.5 76 1.5 2.5 47.5
1N5379B 1N5379B 104.5 110 115.5 12 125 1000 1 0.5 83.6 1.4 2.5 43
1N5380B 1N5380B 114 120 126 10 170 1150 1 0.5 91.2 1.3 2.5 39.5
1N5381B 1N5381B 123.5 130 136.5 10 190 1250 1 0.5 98.8 1.2 2.5 36.6
1N5382B 1N5382B 133 140 147 8 230 1500 1 0.5 106 1.2 2.5 34
1N5383B 1N5383B 142.5 150 157.5 8 330 1500 1 0.5 114 1.1 3.0 31.6
1N5384B 1N5384B 152 160 168 8 350 1650 1 0.5 122 1.1 3.0 29.4
1N5385B 1N5385B 161.5 170 178.5 8 380 1750 1 0.5 129 1.0 3.0 28
1N5386B 1N5386B 171 180 189 5 430 1750 1 0.5 137 1.0 4.0 26.4
1N5387B 1N5387B 180.5 190 199.5 5 450 1850 1 0.5 144 0.9 5.0 25
1N5388B 1N5388B 190 200 210 5 480 1850 1 0.5 152 0.9 5.0 23.6
6. TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of ±5%.
7. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK)
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″
to 1/2″ from the inside edge of mounting clips to the body of the diode (TA = 25°C +8°C, –2°C).
8. SURGE CURRENT (IR)
Surge current is specified as the maximum allowable peak, non–recurrent square–wave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 6 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 7. Mounting contact located
as specified in Note 7 (TA = 25°C +8°C, –2°C).
9. VOLTAGE REGULATION (
VZ)
The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the
electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting contact located as specified
in Note 7 (TA = 25°C +8°C, –2°C).
10. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B–suffix device. The actual
IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75°C at 3/8″ maximum from the device
body.

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 1N5333B Series

8
L=LEAD LENGTH
L=TO HEAT SINK

POWER DISSIPATION (WATTS)

PD, MAXIMUM STEADY STATE
L=1/8″ L=(SEE FIGURE 5)
6

L=3/8″
4

L=1″
2

0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve

TEMPERATURE COEFFICIENTS

10 300
θVZ , TEMPERATURE COEFFICIENT

θVZ , TEMPERATURE COEFFICIENT

200
8
100
6
RANGE
(mV/°C) @ I ZT

(mV/°C) @ I ZT

50
4
30
2 20
RANGE
0 10
-2 5
3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 220
VZ, ZENER VOLTAGE @ IZT (VOLTS) VZ, ZENER VOLTAGE @ IZT (VOLTS)

Figure 2. Temperature Coefficient-Range Figure 3. Temperature Coefficient-Range

for Units 3 to 10 Volts for Units 10 to 220 Volts

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 1N5333B Series

θ JL (t, D), TRANSIENT THERMAL RESISTANCE

20
D = 0.5
JUNCTIONTOLEAD ( °C/W)

10
5 D = 0.2 PPK t1
D = 0.1 t2
2
D = 0.05
1 DUTY CYCLE, D = t1/t2
D = 0.01 NOTE: BELOW 0.1 SECOND, THERMAL SINGLE PULSE ∆ TJL = θJL(t)PPK
0.5 NOTE: RESPONSE CURVE IS APPLICABLE REPETITIVE PULSES ∆ TJL = θJL(t, D)PPK
NOTE: TO ANY LEAD LENGTH (L).
D=0
0.2
0.00 0.00 0.01 0.05 0.1 0.5 1 5 10 20 50 100
1 5 t, TIME (SECONDS)
Figure 4. Typical Thermal Response
L, Lead Length = 3/8 Inch
θ JL, JUNCTIONTOLEAD THERMAL RESISTANCE (°C/W)

40 40

I r , PEAK SURGE CURRENT (AMPS)

20
PW=1ms*
10
30
PW=8.3ms*
4
2
20
L L
1

10 0.4 *SQUARE WAVE PW=100ms*

PRIMARY PATH OF
CONDUCTION IS THROUGH 0.2
THE CATHODE LEAD PW=1000ms*
0 0.1
0 0.2 0.4 0.6 0.8 1 3 4 6 8 10 20 30 40 60 80 100 200
L, LEAD LENGTH TO HEAT SINK (INCH) NOMINAL VZ (V)

Figure 5. Typical Thermal Resistance Figure 6. Maximum Non-Repetitive Surge Current

versus Nominal Zener Voltage
(See Note 3)

30
20
I r , PEAK SURGE CURRENT (AMPS)

T=25°C
10 VZ=3.3V 1000 TC=25°C
I Z , ZENER CURRENT (mA)

5
100
2

1 10

0.5
VZ=200V
1
0.2 PLOTTED FROM INFORMATION
GIVEN IN FIGURE 6
0.1 0.1
1 10 100 100 1 2 3 4 5 6 7 8 9 10
PW, PULSE WIDTH (ms) 0 VZ, ZENER VOLTAGE (VOLTS)

Figure 7. Peak Surge Current versus Pulse Width Figure 8. Zener Voltage versus Zener Current
(See Note 3) VZ = 3.3 thru 10 Volts

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 1N5333B Series

1000

T=25°C
100
I Z , ZENER CURRENT (mA)

100

I Z , ZENER CURRENT (mA)

10 10

1 1

0.1 0.1
10 20 30 40 50 60 70 80 80 100 120 140 160 180 200 220
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 9. Zener Voltage versus Zener Current Figure 10. Zener Voltage versus Zener Current
VZ = 11 thru 75 Volts VZ = 82 thru 200 Volts

APPLICATION NOTE

Since the actual voltage available from a given zener For worst-case design, using expected limits of IZ, limits
diode is temperature dependent, it is necessary to determine of PD and the extremes of TJ (∆TJ) may be estimated.
junction temperature under any set of operating conditions Changes in voltage, VZ, can then be found from:
in order to calculate its value. The following procedure is ∆V = θVZ ∆TJ
recommended: θVZ, the zener voltage temperature coefficient, is found
Lead Temperature, TL, should be determined from: from Figures 2 and 3.
TL = θLA PD + TA Under high power-pulse operation, the zener voltage will
θLA is the lead-to-ambient thermal resistance and PD is the vary with time and may also be affected significantly by the
power dissipation. zener resistance. For best regulation, keep current
Junction Temperature, TJ, may be found from: excursions as low as possible.
TJ = TL + ∆TJL Data of Figure 4 should not be used to compute surge
∆TJL is the increase in junction temperature above the lead capability. Surge limitations are given in Figure 6. They are
temperature and may be found from Figure 4 for a train of lower than would be expected by considering only junction
power pulses or from Figure 5 for dc power. temperature, as current crowding effects cause temperatures
∆TJL = θJL PD to be extremely high in small spots resulting in device
degradation should the limits of Figure 6 be exceeded.

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 CHAPTER 7
Zener Voltage Regulator Diodes –
Surface Mounted Data Sheets

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MM3Z2V4T1 SERIES

Zener Voltage Regulators

200 mW SOD–323 Surface Mount
This series of Zener diodes is packaged in a SOD–323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well http://onsemi.com
suited for applications such as cellular phones, hand held portables,
and high density PC boards.

Specification Features: 1 2
• Standard Zener Breakdown Voltage Range – 2.4 V to 75 V Cathode Anode

• Steady State Power Rating of 200 mW

• Small Body Outline Dimensions:
0.067″ x 0.049″ (1.7 mm x 1.25 mm)
• Low Body Height: 0.035″ (0.9 mm)
• Package Weight: 4.507 mg/unit
• ESD Rating of Class 3 (>16 KV) per Human Body Model
SOD–323
Mechanical Characteristics: CASE 477–02
CASE: Void-free, transfer-molded plastic STYLE 1
FINISH: All external surfaces are corrosion resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds MARKING DIAGRAM
LEADS: Plated with Pb/Sn for ease of solderability
POLARITY: Cathode indicated by polarity band
xx M
FLAMMABILITY RATING: UL94 V–0
MOUNTING POSITION: Any
xx = Specific Device Code
M = Date Code
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Device Dissipation FR–5 Board, PD
(Note 1.) @ TA = 25°C 200 mW ORDERING INFORMATION
Derate above 25°C 1.5 mW/°C
Device
Package Shipping
Thermal Resistance from RJA 635 °C/W
Junction to Ambient MM3ZxxxT1 SOD–323 3000/Tape & Reel

Junction and Storage TJ, Tstg –65 to °C

Temperature Range +150
1. FR–4 Minimum Pad
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 256 of
this data sheet.

†The “T1” suffix refers to an 8 mm, 7 inch reel.

 Semiconductor Components Industries, LLC, 2001 254 Publication Order Number:

May, 2001 – Rev. 5 MM3Z2V4T1/D
 MM3Z2V4T1 SERIES

ELECTRICAL CHARACTERISTICS I
(TA = 25°C unless otherwise noted,
VF = 0.9 V Max. @ IF = 10 mA for all types) IF

Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current VZ VR
V
ZZT Maximum Zener Impedance @ IZT IR VF
IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Reverse Voltage
IF Forward Current Zener Voltage Regulator
VF Forward Voltage @ IF
VZ Maximum Temperature Coefficient of VZ
C Max. Capacitance @VR = 0 and f = 1 MHz

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 MM3Z2V4T1 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)
Zener Voltage (Note 2.) Zener Impedance Leakage Current
VZ C
ZZT (mV/k) @ VR = 0
VZ (Volts) @ IZT @ IZT ZZK @ IZK IR @ VR @ IZT f = 1 MHz
Device
Device Marking Min Nom Max mA   mA A Volts Min Max pF
MM3Z2V4T1 00 2.2 2.4 2.6 5 100 1000 0.5 50 1.0 –3.5 0 450
MM3Z2V7T1 01 2.5 2.7 2.9 5 100 1000 0.5 20 1.0 –3.5 0 450
MM3Z3V0T1 02 2.8 3.0 3.2 5 100 1000 0.5 10 1.0 –3.5 0 450
MM3Z3V3T1 05 3.1 3.3 3.5 5 95 1000 0.5 5 1.0 –3.5 0 450
MM3Z3V6T1 06 3.4 3.6 3.8 5 90 1000 0.5 5 1.0 –3.5 0 450
MM3Z3V9T1 07 3.7 3.9 4.1 5 90 1000 0.5 3 1.0 –3.5 –2.5 450
MM3Z4V3T1 08 4.0 4.3 4.6 5 90 1000 0.5 3 1.0 –3.5 0 450
MM3Z4V7T1 09 4.4 4.7 5.0 5 80 800 0.5 3 2.0 –3.5 0.2 260
MM3Z5V1T1 0A 4.8 5.1 5.4 5 60 500 0.5 2 2.0 –2.7 1.2 225
MM3Z5V6T1 0C 5.2 5.6 6.0 5 40 200 0.5 1 2.0 –2.0 2.5 200
MM3Z6V2T1 0E 5.8 6.2 6.6 5 10 100 0.5 3 4.0 0.4 3.7 185
MM3Z6V8T1 0F 6.4 6.8 7.2 5 15 160 0.5 2 4.0 1.2 4.5 155
MM3Z7V5T1 0G 7.0 7.5 7.9 5 15 160 0.5 1 5.0 2.5 5.3 140
MM3Z8V2T1 0H 7.7 8.2 8.7 5 15 160 0.5 0.7 5.0 3.2 6.2 135
MM3Z9V1T1 0K 8.5 9.1 9.6 5 15 160 0.5 0.2 7.0 3.8 7.0 130
MM3Z10VT1 0L 9.4 10 10.6 5 20 160 0.5 0.1 8.0 4.5 8.0 130
MM3Z11VT1 0M 10.4 11 11.6 5 20 160 0.5 0.1 8.0 5.4 9.0 130
MM3Z12VT1 0N 11.4 12 12.7 5 25 80 0.5 0.1 8.0 6.0 10 130
MM3Z13VT1 0P 12.4 13.25 14.1 5 30 80 0.5 0.1 8.0 7.0 11 120
MM3Z15VT1 0T 14.3 15 15.8 5 30 80 0.5 0.05 10.5 9.2 13 110
MM3Z16VT1 0U 15.3 16.2 17.1 5 40 80 0.5 0.05 11.2 10.4 14 105
MM3Z18VT1 0W 16.8 18 19.1 5 45 80 0.5 0.05 12.6 12.4 16 100
MM3Z20VT1 0Z 18.8 20 21.2 5 55 100 0.5 0.05 14.0 14.4 18 85
MM3Z22VT1 10 20.8 22 23.3 5 55 100 0.5 0.05 15.4 16.4 20 85
MM3Z24VT1 11 22.8 24.2 25.6 5 70 120 0.5 0.05 16.8 18.4 22 80
MM3Z27VT1 12 25.1 27 28.9 2 80 300 0.5 0.05 18.9 21.4 25.3 70
MM3Z30VT1 14 28 30 32 2 80 300 0.5 0.05 21.0 24.4 29.4 70
MM3Z33VT1 18 31 33 35 2 80 300 0.5 0.05 23.2 27.4 33.4 70
MM3Z36VT1 19 34 36 38 2 90 500 0.5 0.05 25.2 30.4 37.4 70
MM3Z39VT1 20 37 39 41 2 130 500 0.5 0.05 27.3 33.4 41.2 45
MM3Z43VT1 21 40 43 46 2 150 500 0.5 0.05 30.1 37.6 46.6 40
MM3Z47VT1 1A 44 47 50 2 170 500 0.5 0.05 32.9 42.0 51.8 40
MM3Z51VT1 1C 48 51 54 2 180 500 0.5 0.05 35.7 46.6 57.2 40
MM3Z56VT1 1D 52 56 60 2 200 500 0.5 0.05 39.2 52.2 63.8 40
MM3Z62VT1 1E 58 62 66 2 215 500 0.5 0.05 43.4 58.8 71.6 35
MM3Z68VT1 1F 64 68 72 2 240 500 0.5 0.05 47.6 65.6 79.8 35
MM3Z75VT1 1G 70 75 79 2 255 500 0.5 0.05 52.5 73.4 88.6 35
2. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

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256
 MM3Z2V4T1 SERIES

Typical Characteristics
1000 1000
Z ZT , DYNAMIC IMPEDANCE ( Ω)

TJ = 25°C

IF, FORWARD CURRENT (mA)

IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
100 100

IZ = 1 mA
5 mA 150°C
10 10

75°C 25°C 0°C

1.0 1.0
3.0 10 80 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V)

Figure 1. Effect of Zener Voltage on Figure 2. Typical Forward Voltage

Zener Impedance

1000 IR, LEAKAGE CURRENT ( µ A) 1000

TA = 25°C 100
C, CAPACITANCE (pF)

10
0 V BIAS 1 V BIAS
100
1.0
+150°C
0.1
BIAS AT
0.01
10 50% OF VZ NOM
0.001 +25°C

0.0001 –55°C

1.0 0.00001
4.0 10 70 0 10 20 30 40 50 60 70
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 3. Typical Capacitance Figure 4. Typical Leakage Current

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 MM3Z2V4T1 SERIES

Typical Characteristics

100 100
TA = 25°C TA = 25°C
I Z , ZENER CURRENT (mA)

IZ , ZENER CURRENT (mA)

10 10

1.0 1

0.1 0.1

0.01 0.01
0 2.0 4.0 6.0 8.0 10 12 10 30 50 70 90
VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V)

Figure 5. Zener Voltage versus Zener Current Figure 6. Zener Voltage versus Zener Current
(VZ Up to 12 V) (12 V to 75 V)

100

80
POWER DISSIPATION (%)

60

40

20

0
0 25 50 75 100 125 150
TEMPERATURE (°C)

Figure 7. Steady State Power Derating

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BZX84C2V4LT1 Series

Zener Voltage Regulators

225 mW SOT–23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT–23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables, http://onsemi.com
and high density PC boards.

Specification Features:
• 225 mW Rating on FR–4 or FR–5 Board 3 1
• Zener Breakdown Voltage Range – 2.4 V to 75 V
Cathode Anode

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 KV) per Human Body Model
3

1
Mechanical Characteristics:
2
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable SOT–23
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: CASE 318
STYLE 8
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL94 V–0
MARKING DIAGRAM

MAXIMUM RATINGS
xxx

M
Rating Symbol Max Unit
Total Power Dissipation on FR–5 Board, PD
(Note 1.) @ TA = 25°C 225 mW xxx = Specific Device Code
Derated above 25°C 1.8 mW/°C M = Date Code
Thermal Resistance – Junction to Ambient RJA 556 °C/W
Total Power Dissipation on Alumina PD
Substrate, (Note 2.) @ TA = 25°C 300 mW ORDERING INFORMATION
Derated above 25°C 2.4 mW/°C
Thermal Resistance – Junction to Ambient RJA 417 °C/W Device
Package Shipping

Junction and Storage TJ, Tstg –65 to °C BZX84CxxxLT1 SOT–23 3000/Tape & Reel
Temperature Range +150
BZX84CxxxLT3 SOT–23 10,000/Tape & Reel
1. FR–5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina

DEVICE MARKING INFORMATION

See specific marking information in the device marking
column of the Electrical Characteristics table on page 261 of
this data sheet.

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

†The “T1” suffix refers to an 8 mm, 7 inch reel.

The “T3” suffix refers to an 8 mm, 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 259 Publication Order Number:

May, 2001 – Rev. 1 BZX84C2V4LT1/D
 BZX84C2V4LT1 Series

ELECTRICAL CHARACTERISTICS I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) IF

Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current VZ VR
V
ZZT Maximum Zener Impedance @ IZT IR VF
IZT
IR Reverse Leakage Current @ VR
VR Reverse Voltage
IF Forward Current
VF Forward Voltage @ IF
VZ Maximum Temperature Coefficient of VZ Zener Voltage Regulator
C Max. Capacitance @ VR = 0 and f = 1 MHz

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 BZX84C2V4LT1 Series

ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
VZ1 (Volts) VZ2 (Volts) VZ3 (Volts) Max Reverse VZ
@ IZT1 = 5 mA @ IZT2 = 1 mA ZZT2 @ IZT3 = 20 mA Leakage (mV/k)
(Note 3.) ZZT1 (Note 3.) (Ohms) (Note 3.) ZZT3 Current @ IZT1 = 5 mA
(Ohms) @ IZT2 = (Ohms) C (pF)
Device @ IZT1 = 1 mA @ IZT3 = IR VR @ VR = 0
@
Device Marking Min Nom Max 5 mA Min Max (Note 4.) Min Max 20 mA A Volts Min Max f = 1 MHz

BZX84C2V4LT1 Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 –3.5 0 450
BZX84C2V7LT1 Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 –3.5 0 450
BZX84C3V0LT1 Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 –3.5 0 450
BZX84C3V3LT1 Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 –3.5 0 450
BZX84C3V6LT1 Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 –3.5 0 450

BZX84C3V9LT1 Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 –3.5 –2.5 450
BZX84C4V3LT1 W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 –3.5 0 450
BZX84C4V7LT1 Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 –3.5 0.2 260
BZX84C5V1LT1 Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 –2.7 1.2 225
BZX84C5V6LT1 Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 –2.0 2.5 200

BZX84C6V2LT1 Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185
BZX84C6V8LT1 Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155
BZX84C7V5LT1 Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140
BZX84C8V2LT1 Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135
BZX84C9V1LT1 Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130

BZX84C10LT1 Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130
BZX84C11LT1 Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130
BZX84C12LT1 Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130
BZX84C13LT1 Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120
BZX84C15LT1 Y4 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110

BZX84C16LT1 Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105
BZX84C18LT1 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100
BZX84C20LT1 Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85
BZX84C22LT1 Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85
BZX84C24LT1 Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80

Max Reverse VZ

VZ1 Below VZ2 Below ZZT2 VZ3 Below Leakage (mV/k) Below
@ IZT1 = 2 mA ZZT1 @ IZT2 = 0.1 mA Below @ IZT3 = 10 mA ZZT3 Current @ IZT1 = 2 mA
Below @ IZT4 = Below C (pF)
Device @ IZT1 = 0.5 mA @ IZT3 = IR VR @ VR = 0
@
Device Marking Min Nom Max 2 mA Min Max (Note 4.) Min Max 10 mA A Volts Min Max f = 1 MHz

BZX84C27LT1 Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70
BZX84C30LT1 Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70
BZX84C33LT1 Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70
BZX84C36LT1 Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70
BZX84C39LT1 Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45

BZX84C43LT1 Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40
BZX84C47LT1 Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40
BZX84C51LT1 Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40
BZX84C56LT1 Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40
BZX84C62LT1 Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35

BZX84C68LT1 Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35
BZX84C75LT1 Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35

3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C
4. The Zener impedance, ZZT2, for the 27 through 75 volt types is tested at 0.5 mA rather than the test current of 0.1 mA used for VZ2

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261
 BZX84C2V4LT1 Series

TYPICAL CHARACTERISTICS

8 100
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)

θ VZ, TEMPERATURE COEFFICIENT (mV/°C)

7 TYPICAL TC VALUES TYPICAL TC VALUES
6
5
4 VZ @ IZT VZ @ IZT
3
10
2
1
0
-1
-2
-3 1
2 3 4 5 6 7 8 9 10 11 12 10 100
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients Figure 2. Temperature Coefficients

(Temperature Range –55°C to +150°C) (Temperature Range –55°C to +150°C)

1000 1000
TJ = 25°C 75 V (MMBZ5267BLT1)
IZ(AC) = 0.1 IZ(DC) 91 V (MMBZ5270BLT1)
Z ZT, DYNAMIC IMPEDANCE (Ω )

IF, FORWARD CURRENT (mA)

IZ = 1 mA f = 1 kHz

100 100
5 mA

20 mA
10 10

150°C 75°C 25°C 0°C

1 1
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V)

Figure 3. Effect of Zener Voltage on Figure 4. Typical Forward Voltage

Zener Impedance

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 BZX84C2V4LT1 Series

TYPICAL CHARACTERISTICS

1000 1000
TA = 25°C

I R , LEAKAGE CURRENT (µA)

0 V BIAS 100
1 V BIAS
10
C, CAPACITANCE (pF)

100
1

BIAS AT +150°C
0.1
50% OF VZ NOM
0.01
10
0.001 +25°C

0.0001 -55°C

1 0.00001
1 10 100 0 10 20 30 40 50 60 70 80 90
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 5. Typical Capacitance Figure 6. Typical Leakage Current

100 100
TA = 25°C TA = 25°C
I Z , ZENER CURRENT (mA)

I Z , ZENER CURRENT (mA)

10 10

1 1

0.1 0.1

0.01 0.01
0 2 4 6 8 10 12 10 30 50 70 90
VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V)

Figure 7. Zener Voltage versus Zener Current Figure 8. Zener Voltage versus Zener Current
(VZ Up to 12 V) (12 V to 91 V)

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MMBZ5221BLT1 Series

Zener Voltage Regulators

225 mW SOT–23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT–23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables, http://onsemi.com
and high density PC boards.

Specification Features:
• 225 mW Rating on FR–4 or FR–5 Board 3 1
• Zener Voltage Range – 2.4 V to 91 V
Cathode Anode

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 KV) per Human Body Model
3

1
Mechanical Characteristics:
2
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable SOT–23
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: CASE 318
STYLE 8
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL94 V–0
MARKING DIAGRAM

MAXIMUM RATINGS
xxx

M
Rating Symbol Max Unit
Total Power Dissipation on FR–5 Board, PD
(Note 1.) @ TA = 25°C 225 mW xxx = Specific Device Code
Derated above 25°C 1.8 mW/°C M = Date Code
Thermal Resistance – Junction to Ambient RJA 556 °C/W
Total Power Dissipation on Alumina PD
Substrate, (Note 2.) @ TA = 25°C 300 mW ORDERING INFORMATION
Derated above 25°C 2.4 mW/°C
Thermal Resistance – Junction to Ambient RJA 417 °C/W Device
Package Shipping

Junction and Storage TJ, Tstg –65 to °C MMBZ52xxBLT1 SOT–23 3000/Tape & Reel
Temperature Range +150
MMBZ52xxBLT3 SOT–23 10,000/Tape & Reel
1. FR–5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina

DEVICE MARKING INFORMATION

See specific marking information in the device marking
column of the Electrical Characteristics table on page 266 of
this data sheet.

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

†The “T1” suffix refers to an 8 mm, 7 inch reel.

The “T3” suffix refers to an 8 mm, 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 264 Publication Order Number:

April, 2001 – Rev. 2 MMBZ5221BLT1/D
 MMBZ5221BLT1 Series

ELECTRICAL CHARACTERISTICS I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) IF

Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current VZ VR
V
ZZT Maximum Zener Impedance @ IZT IR VF
IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Reverse Voltage
IF Forward Current Zener Voltage Regulator
VF Forward Voltage @ IF

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 MMBZ5221BLT1 Series

ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Zener Voltage (Note 3.) Zener Impedance Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Device
Device Marking Min Nom Max mA   mA A Volts
MMBZ5221BLT1 18A 2.28 2.4 2.52 20 30 1200 0.25 100 1
MMBZ5222BLT1 18B 2.37 2.5 2.63 20 30 1250 0.25 100 1
MMBZ5223BLT1 18C 2.56 2.7 2.84 20 30 1300 0.25 75 1
MMBZ5224BLT1 18D 2.66 2.8 2.94 20 30 1400 0.25 75 1
MMBZ5225BLT1 18E 2.85 3 3.15 20 29 1600 0.25 50 1
MMBZ5226BLT1 8A 3.13 3.3 3.47 20 28 1600 0.25 25 1
MMBZ5227BLT1 8B 3.42 3.6 3.78 20 24 1700 0.25 15 1
MMBZ5228BLT1 8C 3.70 3.9 4.10 20 23 1900 0.25 10 1
MMBZ5229BLT1 8D 4.08 4.3 4.52 20 22 2000 0.25 5 1
MMBZ5230BLT1 8E 4.46 4.7 4.94 20 19 1900 0.25 5 2
MMBZ5231BLT1 8F 4.84 5.1 5.36 20 17 1600 0.25 5 2
MMBZ5232BLT1 8G 5.32 5.6 5.88 20 11 1600 0.25 5 3
MMBZ5233BLT1 8H 5.70 6 6.30 20 7 1600 0.25 5 3.5
MMBZ5234BLT1 8J 5.89 6.2 6.51 20 7 1000 0.25 5 4
MMBZ5235BLT1 8K 6.46 6.8 7.14 20 5 750 0.25 3 5
MMBZ5236BLT1 8L 7.12 7.5 7.88 20 6 500 0.25 3 6
MMBZ5237BLT1 8M 7.79 8.2 8.61 20 8 500 0.25 3 6.5
MMBZ5238BLT1 8N 8.26 8.7 9.14 20 8 600 0.25 3 6.5
MMBZ5239BLT1 8P 8.64 9.1 9.56 20 10 600 0.25 3 7
MMBZ5240BLT1 8Q 9.50 10 10.50 20 17 600 0.25 3 8
MMBZ5241BLT1 8R 10.4 11 11.55 20 22 600 0.25 2 8.4
MMBZ5242BLT1 8S 11.40 12 12.60 20 30 600 0.25 1 9.1
MMBZ5243BLT1 8T 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9
MMBZ5244BLT1 8U 13.30 14 14.70 9 15 600 0.25 0.1 10
MMBZ5245BLT1 8V 14.25 15 15.75 8.5 16 600 0.25 0.1 11
MMBZ5246BLT1 8W 15.20 16 16.80 7.8 17 600 0.25 0.1 12
MMBZ5247BLT1 8X 16.15 17 17.85 7.4 19 600 0.25 0.1 13
MMBZ5248BLT1 8Y 17.10 18 18.90 7 21 600 0.25 0.1 14
MMBZ5249BLT1 8Z 18.05 19 19.95 6.6 23 600 0.25 0.1 14
MMBZ5250BLT1 81A 19.00 20 21.00 6.2 25 600 0.25 0.1 15
MMBZ5251BLT1 81B 20.90 22 23.10 5.6 29 600 0.25 0.1 17
MMBZ5252BLT1 81C 22.80 24 25.20 5.2 33 600 0.25 0.1 18
MMBZ5253BLT1 81D 23.75 25 26.25 5 35 600 0.25 0.1 19
MMBZ5254BLT1 81E 25.65 27 28.35 4.6 41 600 0.25 0.1 21
MMBZ5255BLT1 81F 26.60 28 29.40 4.5 44 600 0.25 0.1 21
MMBZ5256BLT1 81G 28.50 30 31.50 4.2 49 600 0.25 0.1 23
MMBZ5257BLT1 81H 31.35 33 34.65 3.8 58 700 0.25 0.1 25
MMBZ5258BLT1 81J 34.20 36 37.80 3.4 70 700 0.25 0.1 27
MMBZ5259BLT1 81K 37.05 39 40.95 3.2 80 800 0.25 0.1 30
MMBZ5260BLT1 81L 40.85 43 45.15 3 93 900 0.25 0.1 33
MMBZ5261BLT1 81M 44.65 47 49.35 2.7 105 1000 0.25 0.1 36
MMBZ5262BLT1 81N 48.45 51 53.55 2.5 125 1100 0.25 0.1 39
MMBZ5263BLT1 81P 53.20 56 58.80 2.2 150 1300 0.25 0.1 43
MMBZ5264BLT1 81Q 57.00 60 63.00 2.1 170 1400 0.25 0.1 46
MMBZ5265BLT1 81R 58.90 62 65.10 2 185 1400 0.25 0.1 47
MMBZ5266BLT1 81S 64.60 68 71.40 1.8 230 1600 0.25 0.1 52
MMBZ5267BLT1 81T 71.25 75 78.75 1.7 270 1700 0.25 0.1 56
MMBZ5268BLT1 81U 77.90 82 86.10 1.5 330 2000 0.25 0.1 62
MMBZ5269BLT1 81V 82.65 87 91.35 1.4 370 2200 0.25 0.1 68
MMBZ5270BLT1 81W 86.45 91 95.55 1.4 400 2300 0.25 0.1 69
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C

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 MMBZ5221BLT1 Series

TYPICAL CHARACTERISTICS

8 100
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)

θ VZ, TEMPERATURE COEFFICIENT (mV/°C)

7 TYPICAL TC VALUES TYPICAL TC VALUES
6 FOR MMBZ5221BLT1 SERIES FOR MMBZ5221BLT1 SERIES
5
4 VZ @ IZT VZ @ IZT
3
10
2
1
0
-1
-2
-3 1
2 3 4 5 6 7 8 9 10 11 12 10 100
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients Figure 2. Temperature Coefficients

(Temperature Range –55°C to +150°C) (Temperature Range –55°C to +150°C)

1000 1000
TJ = 25°C 75 V (MMBZ5267BLT1)
IZ(AC) = 0.1 IZ(DC) 91 V (MMBZ5270BLT1)
Z ZT, DYNAMIC IMPEDANCE (Ω )

IF, FORWARD CURRENT (mA)

IZ = 1 mA f = 1 kHz

100 100
5 mA

20 mA
10 10

150°C 75°C 25°C 0°C

1 1
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V)

Figure 3. Effect of Zener Voltage on Figure 4. Typical Forward Voltage

Zener Impedance

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 MMBZ5221BLT1 Series

TYPICAL CHARACTERISTICS

1000 1000
TA = 25°C

I R , LEAKAGE CURRENT (µA)

0 V BIAS 100
1 V BIAS
10
C, CAPACITANCE (pF)

100
1

BIAS AT +150°C
0.1
50% OF VZ NOM
0.01
10
0.001 +25°C

0.0001 -55°C

1 0.00001
1 10 100 0 10 20 30 40 50 60 70 80 90
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 5. Typical Capacitance Figure 6. Typical Leakage Current

100 100
TA = 25°C TA = 25°C
I Z , ZENER CURRENT (mA)

I Z , ZENER CURRENT (mA)

10 10

1 1

0.1 0.1

0.01 0.01
0 2 4 6 8 10 12 10 30 50 70 90
VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V)

Figure 7. Zener Voltage versus Zener Current Figure 8. Zener Voltage versus Zener Current
(VZ Up to 12 V) (12 V to 91 V)

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MMSZ5221BT1 Series

Zener Voltage Regulators

500 mW SOD–123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD–123 package. These devices provide a
convenient alternative to the leadless 34–package style.
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Specification Features:
• 500 mW Rating on FR–4 or FR–5 Board
• Wide Zener Reverse Voltage Range – 2.4 V to 110 V
• Package Designed for Optimal Automated Board Assembly
1
Cathode
2
Anode
• Small Package Size for High Density Applications
• General Purpose, Medium Current
• ESD Rating of Class 3 (>16 KV) per Human Body Model
2
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
1
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: SOD–123
CASE 425
260°C for 10 Seconds STYLE 1
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL94 V–0
MARKING DIAGRAM
MAXIMUM RATINGS
ÂÂ
Rating Symbol Max Unit
ÂÂ xx M
Total Power Dissipation on FR–5 Board,
(Note 1.) @ TL = 75°C
Derated above 75°C
PD
500
6.7
mW
mW/°C xx
ÂÂ = Specific Device Code
M = Date Code
Thermal Resistance – RJA 340 °C/W
Junction to Ambient (Note 2.)
Thermal Resistance – RJL 150 °C/W
Junction to Lead (Note 2.) ORDERING INFORMATION
Junction and Storage TJ, Tstg –55 to °C
Device
Package Shipping
Temperature Range +150
1. FR–5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint MMSZ52xxBT1 SOD–123 3000/Tape & Reel

MMSZ52xxBT3 SOD–123 10,000/Tape & Reel

2. Thermal Resistance measurement obtained via infrared Scan Method

DEVICE MARKING INFORMATION

See specific marking information in the device marking
column of the Electrical Characteristics table on page 271 of
this data sheet.

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

†The “T1” suffix refers to an 8 mm, 7 inch reel.

The “T3” suffix refers to an 8 mm, 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 269 Publication Order Number:

May, 2001 – Rev. 1 MMSZ5221BT1/D
 MMSZ5221BT1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT VZ VR
V
IR VF
IZK Reverse Current IZT
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Reverse Voltage
IF Forward Current
VF Forward Voltage @ IF Zener Voltage Regulator

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 MMSZ5221BT1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Notes 3. and 4.) Zener Impedance (Note 5.) Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Device
Device Marking Min Nom Max mA   mA A Volts
MMSZ5221BT1 C1 2.28 2.4 2.52 20 30 1200 0.25 100 1
MMSZ5222BT1 C2 2.38 2.5 2.63 20 30 1250 0.25 100 1
MMSZ5223BT1 C3 2.57 2.7 2.84 20 30 1300 0.25 75 1
MMSZ5224BT1 C4 2.66 2.8 2.94 20 30 1400 0.25 75 1
MMSZ5225BT1 C5 2.85 3.0 3.15 20 29 1600 0.25 50 1
MMSZ5226BT1 D1 3.14 3.3 3.47 20 28 1600 0.25 25 1
MMSZ5227BT1 D2 3.42 3.6 3.78 20 24 1700 0.25 15 1
MMSZ5228BT1 D3 3.71 3.9 4.10 20 23 1900 0.25 10 1
MMSZ5229BT1 D4 4.09 4.3 4.52 20 22 2000 0.25 5 1
MMSZ5230BT1 D5 4.47 4.7 4.94 20 19 1900 0.25 5 2
MMSZ5231BT1 E1 4.85 5.1 5.36 20 17 1600 0.25 5 2
MMSZ5232BT1 E2 5.32 5.6 5.88 20 11 1600 0.25 5 3
MMSZ5233BT1 E3 5.70 6.0 6.30 20 7 1600 0.25 5 3.5
MMSZ5234BT1 E4 5.89 6.2 6.51 20 7 1000 0.25 5 4
MMSZ5235BT1 E5 6.46 6.8 7.14 20 5 750 0.25 3 5
MMSZ5236BT1 F1 7.13 7.5 7.88 20 6 500 0.25 3 6
MMSZ5237BT1 F2 7.79 8.2 8.61 20 8 500 0.25 3 6.5
MMSZ5238BT1 F3 8.27 8.7 9.14 20 8 600 0.25 3 6.5
MMSZ5239BT1 F4 8.65 9.1 9.56 20 10 600 0.25 3 7
MMSZ5240BT1 F5 9.50 10 10.50 20 17 600 0.25 3 8
MMSZ5241BT1 H1 10.45 11 11.55 20 22 600 0.25 2 8.4
MMSZ5242BT1 H2 11.40 12 12.60 20 30 600 0.25 1 9.1
MMSZ5243BT1 H3 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9
MMSZ5244BT1 H4 13.30 14 14.70 9.0 15 600 0.25 0.1 10
MMSZ5245BT1 H5 14.25 15 15.75 8.5 16 600 0.25 0.1 11
MMSZ5246BT1 J1 15.20 16 16.80 7.8 17 600 0.25 0.1 12
MMSZ5247BT1 J2 16.15 17 17.85 7.4 19 600 0.25 0.1 13
MMSZ5248BT1 J3 17.10 18 18.90 7.0 21 600 0.25 0.1 14
MMSZ5249BT1 J4 18.05 19 19.95 6.6 23 600 0.25 0.1 14
MMSZ5250BT1 J5 19.00 20 21.00 6.2 25 600 0.25 0.1 15
MMSZ5251BT1 K1 20.90 22 23.10 5.6 29 600 0.25 0.1 17
MMSZ5252BT1 K2 22.80 24 25.20 5.2 33 600 0.25 0.1 18
MMSZ5253BT1 K3 23.75 25 26.25 5.0 35 600 0.25 0.1 19
MMSZ5254BT1 K4 25.65 27 28.35 4.6 41 600 0.25 0.1 21
MMSZ5255BT1 K5 26.60 28 29.40 4.5 44 600 0.25 0.1 21
MMSZ5256BT1 M1 28.50 30 31.50 4.2 49 600 0.25 0.1 23
MMSZ5257BT1 M2 31.35 33 34.65 3.8 58 700 0.25 0.1 25
MMSZ5258BT1 M3 34.20 36 37.80 3.4 70 700 0.25 0.1 27
MMSZ5259BT1 M4 37.05 39 40.95 3.2 80 800 0.25 0.1 30
MMSZ5260BT1 M5 40.85 43 45.15 3.0 93 900 0.25 0.1 33
MMSZ5261BT1 N1 44.65 47 49.35 2.7 105 1000 0.25 0.1 36
MMSZ5262BT1 N2 48.45 51 53.55 2.5 125 1100 0.25 0.1 39
MMSZ5263BT1 N3 53.20 56 58.80 2.2 150 1300 0.25 0.1 43
MMSZ5264BT1 N4 57.00 60 63.00 2.1 170 1400 0.25 0.1 46
MMSZ5265BT1 N5 58.90 62 65.10 2.0 185 1400 0.25 0.1 47
MMSZ5266BT1 P1 64.60 68 71.40 1.8 230 1600 0.25 0.1 52
MMSZ5267BT1 P2 71.25 75 78.75 1.7 270 1700 0.25 0.1 56
MMSZ5268BT1 P3 77.90 82 86.10 1.5 330 2000 0.25 0.1 62
MMSZ5269BT1 P4 82.65 87 91.35 1.4 370 2200 0.25 0.1 68
MMSZ5270BT1 P5 86.45 91 95.55 1.4 400 2300 0.25 0.1 69
MMSZ5272BT1 R2 104.5 110 115.5 1.1 750 3000 0.25 0.1 84
3. The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage.
4. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 KHz.

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 MMSZ5221BT1 Series

TYPICAL CHARACTERISTICS

8 100
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)

θ VZ, TEMPERATURE COEFFICIENT (mV/°C)

7 TYPICAL TC VALUES TYPICAL TC VALUES
6 FOR MMSZ5221BT1 SERIES FOR MMSZ5221BT1 SERIES
5
4 VZ @ IZT VZ @ IZT
3
10
2
1
0
-1
-2
-3 1
2 3 4 5 6 7 8 9 10 11 12 10 100
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients Figure 2. Temperature Coefficients

(Temperature Range –55°C to +150°C) (Temperature Range –55°C to +150°C)

1.2 1000
Ppk , PEAK SURGE POWER (WATTS)

1.0 RECTANGULAR
WAVEFORM, TA = 25°C

0.8 PD versus TL 100

0.6
PD versus TA

0.4 10

0.2

0 1
0 25 50 75 100 125 150 0.1 1 10 100 1000
T, TEMPERATURE (°C) PW, PULSE WIDTH (ms)

Figure 3. Steady State Power Derating Figure 4. Maximum Nonrepetitive Surge Power

1000 1000
TJ = 25°C 75 V (MMSZ5267BT1)
IZ(AC) = 0.1 IZ(DC) 91 V (MMSZ5270BT1)
Z ZT, DYNAMIC IMPEDANCE (Ω )

IF, FORWARD CURRENT (mA)

IZ = 1 mA f = 1 kHz

100 100
5 mA

20 mA
10 10

150°C 75°C 25°C 0°C

1 1
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V)

Figure 5. Effect of Zener Voltage on Figure 6. Typical Forward Voltage

Zener Impedance

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 MMSZ5221BT1 Series

TYPICAL CHARACTERISTICS

1000 1000
TA = 25°C

I R , LEAKAGE CURRENT (µA)

0 V BIAS 100
1 V BIAS
10
C, CAPACITANCE (pF)

100
1

BIAS AT +150°C
0.1
50% OF VZ NOM
0.01
10
0.001 +25°C

0.0001 -55°C

1 0.00001
1 10 100 0 10 20 30 40 50 60 70 80 90
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 7. Typical Capacitance Figure 8. Typical Leakage Current

100 100
TA = 25°C TA = 25°C
I Z , ZENER CURRENT (mA)

I Z , ZENER CURRENT (mA)

10 10

1 1

0.1 0.1

0.01 0.01
0 2 4 6 8 10 12 10 30 50 70 90
VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V)

Figure 9. Zener Voltage versus Zener Current Figure 10. Zener Voltage versus Zener Current
(VZ Up to 12 V) (12 V to 91 V)

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273
MMSZ4678T1 Series

Zener Voltage Regulators

500 mW SOD–123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD–123 package. These devices provide a
convenient alternative to the leadless 34–package style.
http://onsemi.com
Specification Features:
• 500 mW Rating on FR–4 or FR–5 Board
• Wide Zener Reverse Voltage Range – 1.8 V to 43 V
• Package Designed for Optimal Automated Board Assembly
1
Cathode
2
Anode
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 KV) per Human Body Model

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case 2
FINISH: Corrosion resistant finish, easily solderable
1
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds SOD–123
POLARITY: Cathode indicated by polarity band CASE 425
STYLE 1
FLAMMABILITY RATING: UL94 V–0

MAXIMUM RATINGS MARKING DIAGRAM

Rating Symbol Max Unit
ÂÂ
Total Power Dissipation on FR–5 Board, PD
ÂÂ xx M

ÂÂ
(Note 1.) @ TL = 75°C 500 mW
Derated above 75°C 6.7 mW/°C
Thermal Resistance – RJA 340 °C/W xx = Specific Device Code
Junction to Ambient (Note 2.) M = Date Code

Thermal Resistance – RJL 150 °C/W

Junction to Lead (Note 2.)
Junction and Storage TJ, Tstg –55 to °C ORDERING INFORMATION
Temperature Range +150
Device
Package Shipping
1. FR–5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
MMSZ4xxxT1 SOD–123 3000/Tape & Reel
2. Thermal Resistance measurement obtained via infrared Scan Method
MMSZ4xxxT3 SOD–123 10,000/Tape & Reel

DEVICE MARKING INFORMATION

See specific marking information in the device marking
column of the Electrical Characteristics table on page 276 of
this data sheet.

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

†The “T1” suffix refers to an 8 mm, 7 inch reel.

The “T3” suffix refers to an 8 mm, 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 274 Publication Order Number:

May, 2001 – Rev. 1 MMSZ4678T1/D
 MMSZ4678T1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
IR Reverse Leakage Current @ VR VZ VR
V
IR VF
VR Reverse Voltage IZT
IF Forward Current
VF Forward Voltage @ IF

Zener Voltage Regulator

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275
 MMSZ4678T1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Notes 3.) Leakage Current
VZ (Volts) @ IZT IR @ VR
Device
Device Marking Min Nom Max A A Volts
MMSZ4678T1 CC 1.71 1.8 1.89 50 7.5 1
MMSZ4679T1 CD 1.90 2.0 2.10 50 5 1
MMSZ4680T1 CE 2.09 2.2 2.31 50 4 1
MMSZ4681T1 CF 2.28 2.4 2.52 50 2 1
MMSZ4682T1 CH 2.565 2.7 2.835 50 1 1
MMSZ4683T1 CJ 2.85 3.0 3.15 50 0.8 1
MMSZ4684T1 CK 3.13 3.3 3.47 50 7.5 1.5
MMSZ4685T1 CM 3.42 3.6 3.78 50 7.5 2
MMSZ4686T1 CN 3.70 3.9 4.10 50 5 2
MMSZ4687T1 CP 4.09 4.3 4.52 50 4 2
MMSZ4688T1 CT 4.47 4.7 4.94 50 10 3
MMSZ4689T1 CU 4.85 5.1 5.36 50 10 3
MMSZ4690T1 CV 5.32 5.6 5.88 50 10 4
MMSZ4691T1 CA 5.89 6.2 6.51 50 10 5
MMSZ4692T1 CX 6.46 6.8 7.14 50 10 5.1
MMSZ4693T1 CY 7.13 7.5 7.88 50 10 5.7
MMSZ4694T1 CZ 7.79 8.2 8.61 50 1 6.2
MMSZ4695T1 DC 8.27 8.7 9.14 50 1 6.6
MMSZ4696T1 DD 8.65 9.1 9.56 50 1 6.9
MMSZ4697T1 DE 9.50 10 10.50 50 1 7.6
MMSZ4698T1 DF 10.45 11 11.55 50 0.05 8.4
MMSZ4699T1 DH 11.40 12 12.60 50 0.05 9.1
MMSZ4700T1 DJ 12.35 13 13.65 50 0.05 9.8
MMSZ4701T1 DK 13.30 14 14.70 50 0.05 10.6
MMSZ4702T1 DM 14.25 15 15.75 50 0.05 11.4
MMSZ4703T1 DN 15.20 16 16.80 50 0.05 12.1
MMSZ4704T1 DP 16.15 17 17.85 50 0.05 12.9
MMSZ4705T1 DT 17.10 18 18.90 50 0.05 13.6
MMSZ4706T1 DU 18.05 19 19.95 50 0.05 14.4
MMSZ4707T1 DV 19.00 20 21.00 50 0.01 15.2
MMSZ4708T1 DA 20.90 22 23.10 50 0.01 16.7
MMSZ4709T1 DX 22.80 24 25.20 50 0.01 18.2
MMSZ4710T1 DY 23.75 25 26.25 50 0.01 19.0
MMSZ4711T1 EA 25.65 27 28.35 50 0.01 20.4
MMSZ4712T1 EC 26.60 28 29.40 50 0.01 21.2
MMSZ4713T1 ED 28.50 30 31.50 50 0.01 22.8
MMSZ4714T1 EE 31.35 33 34.65 50 0.01 25.0
MMSZ4715T1 EF 34.20 36 37.80 50 0.01 27.3
MMSZ4716T1 EH 37.05 39 40.95 50 0.01 29.6
MMSZ4717T1 EJ 40.85 43 45.15 50 0.01 32.6
3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C

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276
 MMSZ4678T1 Series

TYPICAL CHARACTERISTICS

8 100
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)

θ VZ, TEMPERATURE COEFFICIENT (mV/°C)

7 TYPICAL TC VALUES TYPICAL TC VALUES
6
5
4 VZ @ IZT VZ @ IZT
3
10
2
1
0
-1
-2
-3 1
2 3 4 5 6 7 8 9 10 11 12 10 100
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients Figure 2. Temperature Coefficients

(Temperature Range –55°C to +150°C) (Temperature Range –55°C to +150°C)

1.2 1000
Ppk , PEAK SURGE POWER (WATTS)

1.0 RECTANGULAR
WAVEFORM, TA = 25°C

0.8 PD versus TL 100

0.6
PD versus TA

0.4 10

0.2

0 1
0 25 50 75 100 125 150 0.1 1 10 100 1000
T, TEMPERATURE (°C) PW, PULSE WIDTH (ms)

Figure 3. Steady State Power Derating Figure 4. Maximum Nonrepetitive Surge Power

1000 1000
TJ = 25°C 75 V (MMSZ5267BT1)
IZ(AC) = 0.1 IZ(DC) 91 V (MMSZ5270BT1)
Z ZT, DYNAMIC IMPEDANCE (Ω )

IF, FORWARD CURRENT (mA)

IZ = 1 mA f = 1 kHz

100 100
5 mA

20 mA
10 10

150°C 75°C 25°C 0°C

1 1
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V)

Figure 5. Effect of Zener Voltage on Figure 6. Typical Forward Voltage

Zener Impedance

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277
 MMSZ4678T1 Series

TYPICAL CHARACTERISTICS

1000 1000
TA = 25°C

I R , LEAKAGE CURRENT (µA)

0 V BIAS 100
1 V BIAS
10
C, CAPACITANCE (pF)

100
1

BIAS AT +150°C
0.1
50% OF VZ NOM
0.01
10
0.001 +25°C

0.0001 -55°C

1 0.00001
1 10 100 0 10 20 30 40 50 60 70 80 90
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 7. Typical Capacitance Figure 8. Typical Leakage Current

100 100
TA = 25°C TA = 25°C
I Z , ZENER CURRENT (mA)

I Z , ZENER CURRENT (mA)

10 10

1 1

0.1 0.1

0.01 0.01
0 2 4 6 8 10 12 10 30 50 70 90
VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V)

Figure 9. Zener Voltage versus Zener Current Figure 10. Zener Voltage versus Zener Current
(VZ Up to 12 V) (12 V to 91 V)

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278
MMSZ2V4T1 Series

Zener Voltage Regulators

500 mW SOD–123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD–123 package. These devices provide a
convenient alternative to the leadless 34–package style.
http://onsemi.com
Specification Features:
• 500 mW Rating on FR–4 or FR–5 Board
• Wide Zener Reverse Voltage Range – 2.4 V to 56 V
• Package Designed for Optimal Automated Board Assembly
1
Cathode
2
Anode
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 KV) per Human Body Model

Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case 2
FINISH: Corrosion resistant finish, easily solderable
1
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds SOD–123
POLARITY: Cathode indicated by polarity band CASE 425
STYLE 1
FLAMMABILITY RATING: UL94 V–0

MAXIMUM RATINGS MARKING DIAGRAM

Rating Symbol Max Unit
ÂÂ
Total Power Dissipation on FR–5 Board, PD
ÂÂ xx M

ÂÂ
(Note 1.) @ TL = 75°C 500 mW
Derated above 75°C 6.7 mW/°C
Thermal Resistance – RJA 340 °C/W xx = Specific Device Code
Junction to Ambient (Note 2.) M = Date Code

Thermal Resistance – RJL 150 °C/W

Junction to Lead (Note 2.)
Junction and Storage TJ, Tstg –55 to °C ORDERING INFORMATION
Temperature Range +150
Device
Package Shipping
1. FR–5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
MMSZxxxT1 SOD–123 3000/Tape & Reel
2. Thermal Resistance measurement obtained via infrared Scan Method
MMSZxxxT3 SOD–123 10,000/Tape & Reel

DEVICE MARKING INFORMATION

See specific marking information in the device marking
column of the Electrical Characteristics table on page 280 of
this data sheet.

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

†The “T1” suffix refers to an 8 mm, 7 inch reel.

The “T3” suffix refers to an 8 mm, 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 279 Publication Order Number:

May, 2001 – Rev. 1 MMSZ2V4T1/D
 MMSZ2V4T1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT VZ VR
V
IR VF
IR Reverse Leakage Current @ VR IZT
VR Reverse Voltage
IF Forward Current
VF Forward Voltage @ IF

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
VZ1 (Volts) ZZT1 VZ2 (Volts) ZZT2
(Notes 3. and 4.) (Note 5.) (Notes 3. and 4.) (Note 5.) Leakage Current
@ IZT1 = 5 mA @ IZT2 = 1 mA IR @ VR
Device
Device Marking Min Nom Max  Min Max  A Volts
MMSZ2V4T1 T1 2.28 2.4 2.52 100 1.7 2.1 600 50 1
MMSZ2V7T1 T2 2.57 2.7 2.84 100 1.9 2.4 600 20 1
MMSZ3V0T1 T3 2.85 3.0 3.15 95 2.1 2.7 600 10 1
MMSZ3V3T1 T4 3.14 3.3 3.47 95 2.3 2.9 600 5 1
MMSZ3V6T1 T5 3.42 3.6 3.78 90 2.7 3.3 600 5 1
MMSZ3V9T1 U1 3.71 3.9 4.10 90 2.9 3.5 600 3 1
MMSZ4V3T1 U2 4.09 4.3 4.52 90 3.3 4.0 600 3 1
MMSZ4V7T1 U3 4.47 4.7 4.94 80 3.7 4.7 500 3 2
MMSZ5V1T1 U4 4.85 5.1 5.36 60 4.2 5.3 480 2 2
MMSZ5V6T1 U5 5.32 5.6 5.88 40 4.8 6.0 400 1 2
MMSZ6V2T1 V1 5.89 6.2 6.51 10 5.6 6.6 150 3 4
MMSZ6V8T1 V2 6.46 6.8 7.14 15 6.3 7.2 80 2 4
MMSZ7V5T1 V3 7.13 7.5 7.88 15 6.9 7.9 80 1 5
MMSZ8V2T1 V4 7.79 8.2 8.61 15 7.6 8.7 80 0.7 5
MMSZ9V1T1 V5 8.65 9.1 9.56 15 8.4 9.6 100 0.5 6
MMSZ10T1 A1 9.50 10 10.50 20 9.3 10.6 150 0.2 7
MMSZ11T1 A2 10.45 11 11.55 20 10.2 11.6 150 0.1 8
MMSZ12T1 A3 11.40 12 12.60 25 11.2 12.7 150 0.1 8
MMSZ13T1 A4 12.35 13 13.65 30 12.3 14.0 170 0.1 8
MMSZ15T1 A5 14.25 15 15.75 30 13.7 15.5 200 0.05 10.5
MMSZ16T1 X1 15.20 16 16.80 40 15.2 17.0 200 0.05 11.2
MMSZ18T1 X2 17.10 18 18.90 45 16.7 19.0 225 0.05 12.6
MMSZ20T1 X3 19.00 20 21.00 55 18.7 21.1 225 0.05 14
MMSZ22T1 X4 20.90 22 23.10 55 20.7 23.2 250 0.05 15.4
MMSZ24T1 X5 22.80 24 25.20 70 22.7 25.5 250 0.05 16.8
MMSZ27T1 Y1 25.65 27 28.35 80 25 28.9 300 0.05 18.9
MMSZ30T1 Y2 28.50 30 31.50 80 27.8 32 300 0.05 21
MMSZ33T1 Y3 31.35 33 34.65 80 30.8 35 325 0.05 23.1
MMSZ36T1 Y4 34.20 36 37.80 90 33.8 38 350 0.05 25.2
MMSZ39T1 Y5 37.05 39 40.95 130 36.7 41 350 0.05 27.3
MMSZ43T1 Z1 40.85 43 45.15 150 39.7 46 375 0.05 30.1
MMSZ51T1 Z3 48.45 51 53.55 180 47.6 54 400 0.05 35.7
MMSZ56T1 Z4 53.20 56 58.80 200 51.5 60 425 0.05 39.2
3. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage.
4. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied.
The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.

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280
 MMSZ2V4T1 Series

TYPICAL CHARACTERISTICS

8 100
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)

θ VZ, TEMPERATURE COEFFICIENT (mV/°C)

7 TYPICAL TC VALUES TYPICAL TC VALUES
6 FOR MMSZ2V4T1 SERIES FOR MMSZ2V4T1 SERIES
5
4 VZ @ IZT VZ @ IZT
3
10
2
1
0
-1
-2
-3 1
2 3 4 5 6 7 8 9 10 11 12 10 100
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 1. Temperature Coefficients Figure 2. Temperature Coefficients

(Temperature Range –55°C to +150°C) (Temperature Range –55°C to +150°C)

1.2 1000
Ppk , PEAK SURGE POWER (WATTS)

1.0 RECTANGULAR
WAVEFORM, TA = 25°C

0.8 PD versus TL 100

0.6
PD versus TA

0.4 10

0.2

0 1
0 25 50 75 100 125 150 0.1 1 10 100 1000
T, TEMPERATURE (°C) PW, PULSE WIDTH (ms)

Figure 3. Steady State Power Derating Figure 4. Maximum Nonrepetitive Surge Power

1000 1000
TJ = 25°C 75 V (MMSZ5267BT1)
IZ(AC) = 0.1 IZ(DC) 91 V (MMSZ5270BT1)
Z ZT, DYNAMIC IMPEDANCE (Ω )

IF, FORWARD CURRENT (mA)

IZ = 1 mA f = 1 kHz

100 100
5 mA

20 mA
10 10

150°C 75°C 25°C 0°C

1 1
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V)

Figure 5. Effect of Zener Voltage on Figure 6. Typical Forward Voltage

Zener Impedance

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281
 MMSZ2V4T1 Series

TYPICAL CHARACTERISTICS

1000 1000
TA = 25°C

I R , LEAKAGE CURRENT (µA)

0 V BIAS 100
1 V BIAS
10
C, CAPACITANCE (pF)

100
1

BIAS AT +150°C
0.1
50% OF VZ NOM
0.01
10
0.001 +25°C

0.0001 -55°C

1 0.00001
1 10 100 0 10 20 30 40 50 60 70 80 90
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)

Figure 7. Typical Capacitance Figure 8. Typical Leakage Current

100 100
TA = 25°C TA = 25°C
I Z , ZENER CURRENT (mA)

I Z , ZENER CURRENT (mA)

10 10

1 1

0.1 0.1

0.01 0.01
0 2 4 6 8 10 12 10 30 50 70 90
VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V)

Figure 9. Zener Voltage versus Zener Current Figure 10. Zener Voltage versus Zener Current
(VZ Up to 12 V) (12 V to 91 V)

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282
1PMT5920BT3 Series

3.2 Watt Plastic

Surface Mount
POWERMITE Package
This complete new line of 3.2 Watt Zener Diodes are offered in
highly efficient micro miniature, space saving surface mount with its
unique heat sink design. The POWERMITE package has the same http://onsemi.com
thermal performance as the SMA while being 50% smaller in
footprint area and delivering one of the lowest height profiles (1.1 PLASTIC SURFACE MOUNT
mm) in the industry. Because of its small size, it is ideal for use in
cellular phones, portable devices, business machines and many other 3.2 WATT ZENER DIODES
industrial/consumer applications. 6.2 – 47 VOLTS
Specification Features:
• Zener Breakdown Voltage: 6.2 – 47 Volts
• DC Power Dissipation: 3.2 Watts with Tab 1 (Cathode) @ 75°C 1 2

• Low Leakage < 5 µA 1: CATHODE

• ESD Rating of Class 3 (> 16 kV) per Human Body Model 2: ANODE

• Low Profile – Maximum Height of 1.1 mm

• Integral Heat Sink/Locking Tabs
• Full Metallic Bottom Eliminates Flux Entrapment 1
• Small Footprint – Footprint Area of 8.45 mm2
• Supplied in 12 mm Tape and Reel – 12,000 Units per Reel 2
• POWERMITE is JEDEC Registered as DO–216AA
POWERMITE
• Cathode Indicated by Polarity Band CASE 457
PLASTIC
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
MARKING DIAGRAM
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
D
MOUNTING POSITION: Any 1 xxB 2
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: CATHODE ANODE
260°C for 10 Seconds
xxB = Specific Device Code
xx = 20 – 41
= (See Table Next Page)
D = Date Code

ORDERING INFORMATION

Device Package Shipping

1PMT59xxBT3 POWERMITE 12,000/Tape & Reel

LEAD ORIENTATION IN TAPE:

Cathode (Short) Lead to Sprocket Holes

 Semiconductor Components Industries, LLC, 2001 283 Publication Order Number:

May, 2001 – Rev. 3 1PMT5920BT3/D
 1PMT5920BT3 Series

MAXIMUM RATINGS
Rating Symbol Value Unit
DC Power Dissipation @ TA = 25°C (Note 1.) °PD° 500 °mW
Derate above 25°C 4.0 mW/°C
Thermal Resistance from Junction to Ambient RθJA 248 °C/W
Thermal Resistance from Junction to Lead (Anode) RθJanode 35 °C/W
Maximum DC Power Dissipation (Note 2.) °PD° 3.2 W
Thermal Resistance from Junction to Tab (Cathode) RθJcathode 23 °C/W
Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C
1. Mounted with recommended minimum pad size, PC board FR–4.
2. At Tab (Cathode) temperature, Ttab = 75°C
ELECTRICAL CHARACTERISTICS (TL = 25°C unless I
otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT VZ VR
V
IR VF
IZK Reverse Current IZT
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Reverse Voltage
IF Forward Current
VF Forward Voltage @ IF
Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
Zener Voltage (Note 3.)
ZZT @ IZT ZZK @ IZK
VZ @ IZT (Volts) IZT IR @ VR VR (Note 4.) (Note 4.) IZK
Device
Device Marking Min Nom Max (mA) (A) (V) () () (mA)
1PMT5920BT3 20B 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0
1PMT5921BT3 21B 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0
1PMT5922BT3 22B 7.12 7.5 7.88 50 5.0 6.0 3.0 400 0.5
1PMT5923BT3 23B 7.79 8.2 8.61 45.7 5.0 6.5 3.5 400 0.5
1PMT5924BT3 24B 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5
1PMT5925BT3 25B 9.5 10 10.5 37.5 5.0 8.0 4.5 500 0.25
1PMT5927BT3 27B 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25
1PMT5929BT3 29B 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25
1PMT5930BT3 30B 15.2 16 16.8 23.4 1.0 12.2 10 600 0.25
1PMT5931BT3 31B 17.1 18 18.9 20.8 1.0 13.7 12 650 0.25
1PMT5933BT3 33B 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25
1PMT5934BT3 34B 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25
1PMT5935BT3 35B 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25
1PMT5936BT3 36B 28.5 30 31.5 12.5 1.0 22.8 28 750 0.25
1PMT5939BT3 39B 37.05 39 40.95 9.6 1.0 29.7 45 900 0.25
1PMT5941BT3 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C.
4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The
specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.

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284
 1PMT5920BT3 Series

TYPICAL CHARACTERISTICS
P D , MAXIMUM POWER DISSIPATION (W)

3.5 100

IZ, ZENER CURRENT (mA)

2.5
10
2
TL
1.5
1
1

0.5

0 0.1
25 50 75 100 125 150 175 5 6 7 8 9 10 11
T, TEMPERATURE (°C) VZ, ZENER VOLTAGE (VOLTS)

Figure 1. Steady State Power Derating Figure 2. VZ to 10 Volts

VZ, TEMPERATURE COEFFICIENT (mV/°C)

100 10
50
8 VZ @ IZT
30
IZ , ZENER CURRENT (mA)

20
6
10
5 4
3
2 2
1
0
0.5
0.3 –2
0.2
0.1 –4
0 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 12
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 3. VZ = 12 thru 47 Volts Figure 4. Zener Voltage – To 12 Volts

VZ, TEMPERATURE COEFFICIENT (mV/°C)

200 200
ZZ , DYNAMIC IMPEDANCE (OHMS)

IZ(dc) = 1mA
VZ @ IZT 100
100 70
50
70
30
50
20

30
10 10 mA
7
20
5
3 20 mA iZ(rms) = 0.1 IZ(dc)
10 2
10 20 30 50 70 100 200 5 7 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 5. Zener Voltage – 14 To 47 Volts Figure 6. Effect of Zener Voltage

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 1PMT5920BT3 Series

1k

Z Z , DYNAMIC IMPEDANCE (OHMS)

500 TJ = 25°C
iZ(rms) = 0.1 IZ(dc)
200
100
50

20
10
5 22 V

2 12 V
1 6.8 V
0.5 1 2 5 10 20 50 100 200 500
IZ, ZENER TEST CURRENT (mA)

Figure 7. Effect of Zener Current

10,000
C, CAPACITANCE (pF)

1000
MEASURED @ 0 V BIAS

MEASURED @ 50% VR
100

10
1 10 100
VZ, REVERSE ZENER VOLTAGE (VOLTS)

Figure 8. Capacitance versus Reverse

Zener Voltage

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1SMA5913BT3 Series

1.5 Watt Plastic

Surface Mount
Zener Voltage Regulators
This complete new line of 1.5 Watt Zener Diodes offers the
following advantages. http://onsemi.com

Specification Features:
• Standard Zener Breakdown Voltage Range – 3.3 V to 68 V
CATHODE ANODE
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Flat Handling Surface for Accurate Placement
• Package Design for Top Slide or Bottom Circuit Board Mounting
• Low Profile Package
• Ideal Replacement for MELF Packages
SMA
CASE 403B
Mechanical Characteristics:
PLASTIC
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant with readily
solderable leads MARKING DIAGRAM
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 seconds 8xxB
POLARITY: Cathode indicated by molded polarity notch or cathode LLYWW
band
FLAMMABILITY RATING: UL94 V–0
8xxB = Specific Device Code
= (See Table Next Page)
LL = Assembly Location
MAXIMUM RATINGS Y = Year
Rating Symbol Value Unit WW = Work Week

DC Power Dissipation @ TL = 75°C, PD 1.5 Watts

Measured Zero Lead Length (Note 1.) 20 mW/°C
Derate above 75°C ORDERING INFORMATION
Thermal Resistance –
Junction–to–Lead RJL 50 °C/W Device
Package Shipping

DC Power Dissipation @ TA = 25°C PD 0.5 Watts 1SMA59xxBT3 SMA 5000/Tape & Reel
(Note 2.) Derate above 25°C 4.0 mW/°C
Thermal Resistance –
Junction–to–Ambient RJA 250 °C/W
†The “T3” suffix refers to a 13 inch reel.
Operating and Storage TJ, Tstg –65 to °C
Temperature Range +150
1. 1″ square copper pad, FR–4 board
2. FR–4 Board, using ON Semiconductor minimum recommended footprint

 Semiconductor Components Industries, LLC, 2001 287 Publication Order Number:

May, 2001 – Rev. 2 1SMA5913BT3/D
 1SMA5913BT3 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless I

otherwise noted, VF = 1.5 V Max. @ IF = 200 mA for all types)
IF
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT VZ VR
V
IR VF
IZK Reverse Current IZT
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Reverse Voltage
IF Forward Current
VF Forward Voltage @ IF Zener Voltage Regulator
IZM Maximum DC Zener Current

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 1SMA5913BT3 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.5 V Max. @ IF = 200 mA for all types)
Zener Voltage (Note 4.) Zener Impedance Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR IZM
Device
Device (Note 3.) Marking Min Nom Max mA   mA µA Volts mA(dc)
1SMA5913BT3 813B 3.13 3.3 3.47 113.6 10 500 1.0 50 1.0 455
1SMA5914BT3 814B 3.42 3.6 3.78 104.2 9.0 500 1.0 35.5 1.0 417
1SMA5915BT3 815B 3.70 3.9 4.10 96.1 7.5 500 1.0 12.5 1.0 385
1SMA5916BT3 816B 4.08 4.3 4.52 87.2 6.0 500 1.0 2.5 1.0 349
1SMA5917BT3 817B 4.46 4.7 4.94 79.8 5.0 500 1.0 2.5 1.5 319
1SMA5918BT3 818B 4.84 5.1 5.36 73.5 4.0 350 1.0 2.5 2.0 294
1SMA5919BT3 819B 5.32 5.6 5.88 66.9 2.0 250 1.0 2.5 3.0 268
1SMA5920BT3 820B 5.89 6.2 6.51 60.5 2.0 200 1.0 2.5 4.0 242
1SMA5921BT3 821B 6.46 6.8 7.14 55.1 2.5 200 1.0 2.5 5.2 221
1SMA5922BT3 822B 7.12 7.5 7.88 50 3.0 400 0.5 2.5 6.0 200
1SMA5923BT3 823B 7.79 8.2 8.61 45.7 3.5 400 0.5 2.5 6.5 183
1SMA5924BT3 824B 8.64 9.1 9.56 41.2 4.0 500 0.5 2.5 7.0 165
1SMA5925BT3 825B 9.5 10 10.5 37.5 4.5 500 0.25 2.5 8.0 150
1SMA5926BT3 826B 10.45 11 11.55 34.1 5.5 550 0.25 0.5 8.4 136
1SMA5927BT3 827B 11.4 12 12.6 31.2 6.5 550 0.25 0.5 9.1 125
1SMA5928BT3 828B 12.35 13 13.65 28.8 7.0 550 0.25 0.5 9.9 115
1SMA5929BT3 829B 14.25 15 15.75 25 9.0 600 0.25 0.5 11.4 100
1SMA5930BT3 830B 15.2 16 16.8 23.4 10 600 0.25 0.5 12.2 94
1SMA5931BT3 831B 17.1 18 18.9 20.8 12 650 0.25 0.5 13.7 83
1SMA5932BT3 832B 19 20 21 18.7 14 650 0.25 0.5 15.2 75
1SMA5933BT3 833B 20.9 22 23.1 17 17.5 650 0.25 0.5 16.7 68
1SMA5934BT3 834B 22.8 24 25.2 15.6 19 700 0.25 0.5 18.2 63
1SMA5935BT3 835B 25.65 27 28.35 13.9 23 700 0.25 0.5 20.6 56
1SMA5936BT3 836B 28.5 30 31.5 12.5 26 750 0.25 0.5 22.8 50
1SMA5937BT3 837B 31.35 33 34.65 11.4 33 800 0.25 0.5 25.1 45
1SMA5938BT3 838B 34.2 36 37.8 10.4 38 850 0.25 0.5 27.4 42
1SMA5939BT3 839B 37.05 39 40.95 9.6 45 900 0.25 0.5 29.7 38
1SMA5940BT3 840B 40.85 43 45.15 8.7 53 950 0.25 0.5 32.7 35
1SMA5941BT3 841B 44.65 47 49.35 8.0 67 1000 0.25 0.5 35.8 32
1SMA5942BT3 842B 48.45 51 53.55 7.3 70 1100 0.25 0.5 38.8 29
1SMA5943BT3 843B 53.2 56 58.8 6.7 86 1300 0.25 0.5 42.6 27
1SMA5944BT3 844B 58.9 62 65.1 6.0 100 1500 0.25 0.5 47.1 24
1SMA5945BT3 845B 64.6 68 71.4 5.5 120 1700 0.25 0.5 51.7 22
3. Tolerance and Voltage Regulation Designation – The type number listed indicates a tolerance of ±5%.
4. VZ limits are to be guaranteed at thermal equilibrium.

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 1SMA5913BT3 Series

Rating and Typical Characteristic Curves (TA = 25°C)

4 100
PD , MAXIMUM POWER DISSIPATION (WATTS)

3.2

IZ, ZENER CURRENT (mA)

10
2.4
TL
1.6
1

0.8
TA

0 0.1
0 25 50 75 100 125 150 0 2 4 6 8 10
T, TEMPERATURE (°C) VZ, ZENER VOLTAGE (VOLTS)

Figure 7. Steady State Power Derating Figure 8. VZ – 3.3 thru 10 Volts

100 10
θVZ , TEMPERATURE COEFFICIENT (mV/ °C)
8 VZ @ IZT
IZ, ZENER CURRENT (mA)

6
10
4

2
1
0

-2

0.1 -4
0 10 20 30 40 50 60 70 80 2 4 6 8 10 12
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 9. VZ = 12 thru 68 Volts Figure 10. Zener Voltage – 3.3 to 12 Volts

100
θVZ , TEMPERATURE COEFFICIENT (mV/ °C)

VZ @ IZT
ZZ, DYNAMIC IMPEDANCE (OHMS)

100
IZ(dc) = 1 mA

10 10 mA

IZ(rms) = 0.1 IZ(dc)

20 mA
10
10 100 10 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 11. Zener Voltage – 14 to 68 Volts Figure 12. Effect of Zener Voltage

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 1SMA5913BT3 Series

Rating and Typical Characteristic Curves (TA = 25°C)

1000 10

NONREPETITIVE, EXPONENTIAL
MEASURED @ PULSE WAVEFORM, TJ = 25°C
ZERO BIAS

Ppk , PEAK POWER (kW)

C, CAPACITANCE (pF)

1
MEASURED @
100 VZ/2

0.1

TJ = 25°C
10 0.01
10 100 0.01 0.1 1 10
BREAKDOWN VOLTAGE (VOLTS) TP, PULSE WIDTH (ms)

Figure 13. Capacitance Curve Figure 14. Typical Pulse Rating Curve

120 120
TA = 25°C
≤ 10 µs 8/20 µs WAVEFORM
PW (ID) IS DEFINED AS THE
Ippm, PEAK PULSE CURRENT (%)

100 100 AS DEFINED BY ANSI C62.1

POINT WHERE THE PEAK CURRENT
PEAK VALUE 0.9 IPEAK AND IEC 801-5.
DECAYS TO 50% OF Ipp.
Ippm, PEAK PULSE

80 Ippm 80
CURRENT (%)

60 HALF VALUE - Ipp/2 60

0.5 IPEAK

40 40
10/1000 µs WAVEFORM
AS DEFINED BY R.E.A.
20 20
td
0.1 IPEAK T = 8 µs
0 0
0 1 2 3 4 5 0 0.02 0.04 0.06 0.08 0.1
t, TIME (ms) T t, TIME (ms)
20 µs
Figure 15. Pulse Waveform Figure 16. Pulse Waveform

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1SMB5913BT3 Series

3 Watt Plastic Surface Mount

Zener Voltage Regulators
This complete new line of 3 Watt Zener diodes offers the following
advantages.

Specification Features:
http://onsemi.com
• Zener Voltage Range – 3.3 V to 200 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
PLASTIC SURFACE MOUNT
• Flat Handling Surface for Accurate Placement
ZENER VOLTAGE
• Package Design for Top Side or Bottom Circuit Board Mounting
REGULATOR DIODES
Mechanical Characteristics: 3.3–200 VOLTS
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are 3 WATT DC POWER
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L–Bend providing more contact area to bond pads Cathode Anode
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL94 V–0

MAXIMUM RATINGS
Rating Symbol Value Unit SMB
Maximum Steady State Power Dissipation PD 3.0 W CASE 403A
@ TL = 75°C PLASTIC
Measured at Zero Lead Length
Derate Above 75°C 40 mW/°C
Thermal Resistance from Junction to Lead RJL 25 °C/W MARKING DIAGRAM

Maximum Steady State Power Dissipation PD 550 mW

@ TA = 25°C (Note 1.) YWW
Derate Above 25°C 9xxB
Thermal Resistance from Junction 4.4 mW/°C
to Ambient RJA 226 °C/W Y = Year
Operating and Storage TJ, Tstg –65 to °C WW = Work Week
Temperature Range +150 9xxB = Specific Device Code
= (See Table Page 294)
1. FR–4 board, within 1″ to device, using ON Semiconductor minimum
recommended footprint, as shown in case 403A outline dimensions spec.

ORDERING INFORMATION

Device
Package Shipping

1SMB59xxBT3 SMB 2500/Tape & Reel

Devices listed in bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

†The “T3” suffix refers to a 13 inch reel.

 Semiconductor Components Industries, LLC, 2001 292 Publication Order Number:

May, 2001 – Rev. 1 1SMB5913BT3/D
 1SMB5913BT3 Series

ELECTRICAL CHARACTERISTICS I
(TL = 30°C unless otherwise noted,
VF = 1.5 V Max. @ IF = 200 mA(dc) for all types) IF

Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current VZ VR
V
ZZT Maximum Zener Impedance @ IZT IR VF
IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Reverse Voltage
IF Forward Current Zener Voltage Regulator
VF Forward Voltage @ IF
IZM Maximum DC Zener Current

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 1SMB5913BT3 Series

ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max. @ IF = 200 mA(dc) for all types)
Zener Voltage (Note 3.) Zener Impedance (Note 4.) Leakage Current
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR IZM
Device Device
(Note 2.) Marking Min Nom Max mA   mA µA Volts mA(dc)
1SMB5913BT3 913B 3.13 3.3 3.47 113.6 10 500 1 100 1 454
1SMB5914BT3 914B 3.42 3.6 3.78 104.2 9 500 1 75 1 416
1SMB5915BT3 915B 3.70 3.9 4.10 96.1 7.5 500 1 25 1 384
1SMB5916BT3 916B 4.08 4.3 4.52 87.2 6 500 1 5 1 348
1SMB5917BT3 917B 4.46 4.7 4.94 79.8 5 500 1 5 1.5 319
1SMB5918BT3 918B 4.84 5.1 5.36 73.5 4 350 1 5 2 294
1SMB5919BT3 919B 5.32 5.6 5.88 66.9 2 250 1 5 3 267
1SMB5920BT3 920B 5.89 6.2 6.51 60.5 2 200 1 5 4 241
1SMB5921BT3 921B 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220
1SMB5922BT3 922B 7.12 7.5 7.88 50 3 400 0.5 5 6 200
1SMB5923BT3 923B 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182
1SMB5924BT3 924B 8.64 9.1 9.56 41.2 4 500 0.5 5 7 164
1SMB5925BT3 925B 9.5 10 10.5 37.5 4.5 500 0.25 5 8 150
1SMB5926BT3 926B 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136
1SMB5927BT3 927B 11.4 12 12.6 31.2 6.5 550 0.25 1 9.1 125
1SMB5928BT3 928B 12.35 13 13.65 28.8 7 550 0.25 1 9.9 115
1SMB5929BT3 929B 14.25 15 15.75 25 9 600 0.25 1 11.4 100
1SMB5930BT3 930B 15.2 16 16.8 23.4 10 600 0.25 1 12.2 93
1SMB5931BT3 931B 17.1 18 18.9 20.8 12 650 0.25 1 13.7 83
1SMB5932BT3 932B 19 20 21 18.7 14 650 0.25 1 15.2 75
1SMB5933BT3 933B 20.9 22 23.1 17 17.5 650 0.25 1 16.7 68
1SMB5934BT3 934B 22.8 24 25.2 15.6 19 700 0.25 1 18.2 62
1SMB5935BT3 935B 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55
1SMB5936BT3 936B 28.5 30 31.5 12.5 28 750 0.25 1 22.8 50
1SMB5937BT3 937B 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45
1SMB5938BT3 938B 34.2 36 37.8 10.4 38 850 0.25 1 27.4 41
1SMB5939BT3 939B 37.05 39 40.95 9.6 45 900 0.25 1 29.7 38
1SMB5940BT3 940B 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34
1SMB5941BT3 941B 44.65 47 49.35 8 67 1000 0.25 1 35.8 31
1SMB5942BT3 942B 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29
1SMB5943BT3 943B 53.2 56 58.8 6.7 86 1300 0.25 1 42.6 26
1SMB5944BT3 944B 58.9 62 65.1 6 100 1500 0.25 1 47.1 24
1SMB5945BT3 945B 64.6 68 71.4 5.5 120 1700 0.25 1 51.7 22
1SMB5946BT3 946B 71.25 75 78.75 5 140 2000 0.25 1 56 20
1SMB5947BT3 947B 77.9 82 86.1 4.6 160 2500 0.25 1 62.2 18
1SMB5948BT3 948B 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16
1SMB5949BT3 949B 95 100 105 3.7 250 3100 0.25 1 76 15
1SMB5950BT3 950B 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13
1SMB5951BT3 951B 114 120 126 3.1 380 4500 0.25 1 91.2 12
1SMB5952BT3 952B 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11
1SMB5953BT3 953B 142.5 150 157.5 2.5 600 6000 0.25 1 114 10
1SMB5954BT3 954B 152 160 168 2.3 700 6500 0.25 1 121.6 9
1SMB5955BT3 955B 171 180 189 2.1 900 7000 0.25 1 136.8 8
1SMB5956BT3 956B 190 200 210 1.9 1200 8000 0.25 1 152 7
2. TOLERANCE AND TYPE NUMBER DESIGNATION
The type numbers listed indicate a tolerance of ±5%.
3. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal Zener voltage is measured with the device junction in thermal equilibrium with ambient temperature at 25°C.
4. ZENER IMPEDANCE (ZZ) DERIVATION ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.

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 1SMB5913BT3 Series

6
P D, MAXIMUM POWER DISSIPATION (WATTS) 1K
RECTANGULAR

PPK , PEAK SURGE POWER (WATTS)

5 NONREPETITIVE
500
WAVEFORM
300 TJ=25°C PRIOR
4
200 TO INITIAL PULSE
TL
3
100

2 50
30
1
20
TA
0 10
0 25 50 75 100 125 150 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100
T, TEMPERATURE (°C) PW, PULSE WIDTH (ms)

Figure 1. Steady State Power Derating Figure 2. Maximum Surge Power

10 200
θVZ , TEMPERATURE COEFFICIENT (mV/ °C)

θVZ , TEMPERATURE COEFFICIENT (mV/ °C)

8 VZ @ IZT VZ @ IZT
100
6
70
4 50

2
30
0
20
-2

-4 10
2 4 6 8 10 12 10 20 30 50 70 100 200
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 3. Zener Voltage — To 12 Volts Figure 4. Zener Voltage — 14 To 200 Volts

100 100
50 50
IZT, REVERSE CURRENT (mA)
IZT, REVERSE CURRENT (mA)

30 30
20 20
10 10
5 5
3 3
2 2
1 1
0.5 0.5
0.3 0.3
0.2 0.2
0.1 0.1
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)

Figure 5. VZ = 3.3 thru 10 Volts Figure 6. VZ = 12 thru 82 Volts

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 1SMB5913BT3 Series

200 1k
IZ(dc) = 1mA TJ = 25°C
500
100 iZ(rms) = 0.1 IZ(dc)
Z Z , DYNAMIC IMPEDANCE (OHMS)

Z Z , DYNAMIC IMPEDANCE (OHMS)

70 200 VZ =150V
50
100
91V
30 50
20 62V
20
10mA
10 10
7
5 22V
5
3 20mA iZ(rms) = 0.1 IZ(dc) 2 12V
6.8V
2 1
5 7 10 20 30 50 70 100 0.5 1 2 5 10 20 50 100 200 500
VZ, ZENER VOLTAGE (VOLTS) IZ, ZENER TEST CURRENT (mA)

Figure 7. Effect of Zener Voltage Figure 8. Effect of Zener Current

Rating and Typical Characteristic Curves (TA = 25°C)

1000 10

NONREPETITIVE, EXPONENTIAL
MEASURED @ PULSE WAVEFORM, TJ = 25°C
ZERO BIAS
Ppk , PEAK POWER (kW)
C, CAPACITANCE (pF)

1
MEASURED @
100 VZ/2

0.1

TJ = 25°C
10 0.01
10 100 0.01 0.1 1 10
BREAKDOWN VOLTAGE (VOLTS) TP, PULSE WIDTH (ms)

Figure 9. Capacitance Curve Figure 10. Typical Pulse Rating Curve

120 120
TA = 25°C
≤ 10 µs 8/20 µs WAVEFORM
PW (ID) IS DEFINED AS THE
Ippm, PEAK PULSE CURRENT (%)

100 100 AS DEFINED BY ANSI C62.1

POINT WHERE THE PEAK CURRENT
PEAK VALUE 0.9 IPEAK AND IEC 801-5.
DECAYS TO 50% OF Ipp.
Ippm, PEAK PULSE

80 Ippm 80
CURRENT (%)

60 HALF VALUE - Ipp/2 60

0.5 IPEAK

40 40
10/1000 µs WAVEFORM
AS DEFINED BY R.E.A.
20 20
td
0.1 IPEAK T = 8 µs
0 0
0 1 2 3 4 5 0 0.02 0.04 0.06 0.08 0.1
t, TIME (ms) T t, TIME (ms)
20 µs
Figure 11. Pulse Waveform Figure 12. Pulse Waveform

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 CHAPTER 8
Surface Mount Information
and Packaging Specifications

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http://onsemi.com
298
 INFORMATION FOR USING SURFACE MOUNT PACKAGES
RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total interface between the board and the package. With the
design. The footprint for the semiconductor packages must correct pad geometry, the packages will self align when
be the correct size to ensure proper solder connection subjected to a solder reflow process.

POWER DISSIPATION FOR A SURFACE MOUNT DEVICE

The power dissipation for a surface mount device is a 160

RθJA , THERMAL RESISTANCE, JUNCTION

function of the drain/collector pad size. These can vary from
the minimum pad size for soldering to a pad size given for Board Material = 0.0625″ TA = 25°C
140 G-10/FR-4, 2 oz Copper
maximum power dissipation. Power dissipation for a

TO AMBIENT (°C/W)
0.8 Watts
surface mount device is determined by TJ(max), the
maximum rated junction temperature of the die, RθJA, the
120
thermal resistance from the device junction to ambient, and
1.25 Watts* 1.5 Watts
the operating temperature, TA. Using the values provided on
the data sheet, PD can be calculated as follows: 100
TJ(max) – TA
PD =
RθJA *Mounted on the DPAK footprint
80
0.0 0.2 0.4 0.6 0.8 1.0
The values for the equation are found in the maximum
A, AREA (SQUARE INCHES)
ratings table on the data sheet. Substituting these values into
Figure 1. Thermal Resistance versus Drain Pad
the equation for an ambient temperature TA of 25°C, one can
Area for the SOT–223 Package (Typical)
calculate the power dissipation of the device. For example,
for a SOT–223 device, PD is calculated as follows. 100
RθJA , THERMAL RESISTANCE, JUNCTION

Board Material = 0.0625″

G-10/FR-4, 2 oz Copper
PD = 150°C – 25°C = 800 milliwatts 1.75 Watts
156°C/W 80
TO AMBIENT (°C/W)

TA = 25°C
The 156°C/W for the SOT–223 package assumes the use
of the recommended footprint on a glass epoxy printed 60
circuit board to achieve a power dissipation of 800 3.0 Watts
milliwatts. There are other alternatives to achieving higher
power dissipation from the surface mount packages. One is 40
5.0 Watts
to increase the area of the drain/collector pad. By increasing
the area of the drain/collector pad, the power dissipation can
20
be increased. Although the power dissipation can almost be 0 2 4 6 8 10
doubled with this method, area is taken up on the printed A, AREA (SQUARE INCHES)
circuit board which can defeat the purpose of using surface Figure 2. Thermal Resistance versus Drain Pad
mount technology. For example, a graph of RθJA versus Area for the DPAK Package (Typical)
drain pad area is shown in Figures 1, 2 and 3. 70
RθJA , THERMAL RESISTANCE, JUNCTION

Board Material = 0.0625″

G-10/FR-4, 2 oz Copper TA = 25°C
Another alternative would be to use a ceramic substrate or 60
an aluminum core board such as Thermal Clad. Using a 2.5 Watts
TO AMBIENT (°C/W)

board material such as Thermal Clad, an aluminum core

50
board, the power dissipation can be doubled using the same
footprint. 3.5 Watts
40

5 Watts
30

20
0 2 4 6 8 10 12 14 16
A, AREA (SQUARE INCHES)
Figure 3. Thermal Resistance versus Drain Pad
Area for the D2PAK Package (Typical)

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 SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed pattern of the opening in the stencil for the drain pad is not
circuit board, solder paste must be applied to the pads. critical as long as it allows approximately 50% of the pad to
Solder stencils are used to screen the optimum amount. be covered with paste.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the
SC–59, SC–70/SOT–323, SOD–123, SOT–23, SOT–143,
ÇÇ
ÇÇ ÇÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ ÇÇ
ÇÇÇ ÇÇ
SOT–223, SO–8, SO–14, SO–16, and SMB/SMC diode SOLDER PASTE

ÇÇ ÇÇÇ
packages, the stencil opening should be the same as the pad OPENINGS
size or a 1:1 registration. This is not the case with the DPAK
and D2PAK packages. If a 1:1 opening is used to screen
solder onto the drain pad, misalignment and/or
“tombstoning” may occur due to an excess of solder. For
ÇÇ ÇÇÇ
ÇÇÇ STENCIL

these two packages, the opening in the stencil for the paste
should be approximately 50% of the tab area. The opening Figure 4. Typical Stencil for DPAK and
D2PAK Packages
for the leads is still a 1:1 registration. Figure 4 shows a
typical stencil for the DPAK and D2PAK packages. The

SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated • After soldering has been completed, the device should
temperature of the device. When the entire device is heated be allowed to cool naturally for at least three minutes.
to a high temperature, failure to complete soldering within Gradual cooling should be used since the use of forced
a short time could result in device failure. Therefore, the cooling will increase the temperature gradient and will
following items should always be observed in order to result in latent failure due to mechanical stress.
minimize the thermal stress to which the devices are • Mechanical stress or shock should not be applied during
subjected. cooling.
• Always preheat the device.
• The delta temperature between the preheat and * Soldering a device without preheating can cause
soldering should be 100°C or less.* excessive thermal shock and stress which can result in
• When preheating and soldering, the temperature of the damage to the device.
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When * Due to shadowing and the inability to set the wave height
using infrared heating with the reflow soldering to incorporate other surface mount components, the D2PAK
method, the difference should be a maximum of 10°C. is not recommended for wave soldering.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.

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 TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of actual temperature that might be experienced on the surface
control settings that will give the desired heat pattern. The of a test board at or near a central solder joint. The two
operator must set temperatures for several heating zones and profiles are based on a high density and a low density board.
a figure for belt speed. Taken together, these control settings The Vitronics SMD310 convection/infrared reflow
make up a heating “profile” for that particular circuit board. soldering system was used to generate this profile. The type
On machines controlled by a computer, the computer of solder used was 62/36/2 Tin Lead Silver with a melting
remembers these profiles from one operating session to the point between 177–189°C. When this type of furnace is used
next. Figure 5 shows a typical heating profile for use when for solder reflow work, the circuit boards and solder joints
soldering a surface mount device to a printed circuit board. tend to heat first. The components on the board are then
This profile will vary among soldering systems, but it is a heated by conduction. The circuit board, because it has a
good starting point. Factors that can affect the profile large surface area, absorbs the thermal energy more
include the type of soldering system in use, density and types efficiently, then distributes this energy to the components.
of components on the board, type of solder used, and the type Because of this effect, the main body of a component may
of board or substrate material being used. This profile shows be up to 30 degrees cooler than the adjacent solder
temperature versus time. The line on the graph shows the joints.

STEP 1 STEP 2 STEP 3 STEP 4 STEP 5 STEP 6 STEP 7

PREHEAT VENT HEATING HEATING HEATING VENT COOLING
ZONE 1 SOAK" ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7
RAMP" RAMP" SOAK" SPIKE" 205° TO 219°C
200°C 170°C PEAK AT
DESIRED CURVE FOR HIGH SOLDER JOINT
MASS ASSEMBLIES 160°C

150°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
100°C 140°C (DEPENDING ON
MASS OF ASSEMBLY)
100°C

DESIRED CURVE FOR LOW

MASS ASSEMBLIES
50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

Figure 5. Typical Solder Heating Profile

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Footprints for Soldering

0.089
2.261
0.157
4.0

0.108
0.0787 2.743
2.0

0.085
0.0787 2.159
2.0
inches
inches
mm
mm
SMA SMB

0.037
0.037 0.95
0.171 0.95
4.343

0.150 0.079
3.810 2.0

0.035
0.9

0.110 0.031 inches

2.794 inches
0.8 mm
mm

SMC SOT–23

ÉÉÉ ÉÉÉ
0.91
0.036

ÉÉÉ
ÉÉÉ ÉÉÉ
ÉÉÉ 1.22
0.63mm
0.025

ÉÉÉ ÉÉÉ 0.048

ÉÉÉ 2.36
0.093
4.19
ÉÉÉ inches
1.60mm
0.063
2.85mm
0.112
0.83mm
0.033
inches
mm

0.165 mm

SOD–123 SOD–323

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Footprints for Soldering
0.094
2.4
0.025
0.105 0.635
2.67
0.030
0.037 0.762
0.95

0.074
1.9
0.100 0.050
0.037 2.54 1.27
0.95

0.028 inches
0.7 mm

inches 0.039
SC–74 1.0 POWERMITE
mm

0.5 mm (min) 0.5 mm (min)

ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ

ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ
ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ
0.65 mm 0.65 mm

0.65 mm 0.65 mm
ÉÉÉ
ÉÉÉ ÉÉÉ
ÉÉÉ ÉÉÉ
ÉÉÉ
ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ
0.4 mm (min)

0.4 mm (min)

ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ

1.9 mm 1.9 mm

SC–88 SC–88A

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TVS/Zener Axial-Lead
Lead Tape Packaging Standards for Axial-Lead
Components

1.0 SCOPE 3.3.4 – 50 lb. Kraft paper is wound between layers

of components as far as necessary for component
This section covers packaging requirements for the
protection.
following axial-lead component’s use in automatic testing
and assembly equipment: ON Semiconductor Case 17-02, 3.3.5 – Components shall be centered between tapes
Case 41A-02, Case 51-02 (DO-7), Case 59-03 (DO-41), such that the difference between D1 and D2 does not
Case 59-04, Case 194-04 and Case 299-02 (DO-35). exceed 0.055.
Packaging, as covered in this section, shall consist of 3.3.6 – Staples shall not be used for splicing. No more
axial-lead components mounted by their leads on pressure than four layers of tape shall be used in any splice area
sensitive tape, wound onto a reel. and no tape shall be offset from another by more than
2.0 PURPOSE 0.031 inch noncumulative. Tape splices shall overlap
at least 6 inches for butt joints and at least 3 inches for
This section establishes ON Semiconductor standard lap joints and shall not be weaker than unspliced tape.
practices for lead-tape packaging of axial-lead components
and meets the requirements of EIA Standard RS-296-D 3.3.7 – Quantity per reel shall be as indicated in
“Lead-taping of Components on Axial Lead Configuration Table 1. Orders for tape and reeled product will only
for Automatic Insertion,” level 1. be processed and shipped in full reel increments.
Scheduled orders must be in releases of full reel
3.0 REQUIREMENTS increments or multiples thereof.

3.1 Component leads 3.3.8 – A maximum of 0.25% of the components

per reel quantity may be missing without consecutive
3.1.1 – Component leads shall not be bent beyond
missing per level 1 of RS-296-D.
dimension E from their normal position. See Figure 2.
3.3.9 – The single face roll pad shall be placed
3.1.2 – The “C” dimension shall be governed by the
around the finished reel and taped securely. Each reel
overall length of the reel packaged component. The
shall then be placed in an appropriate container.
distance between flanges shall be 0.059 inch to 0.315
inch greater than the overall component length. See 3.4 Marking
Figures 2 and 3. Minimum reel and carton marking shall consist of
3.1.3 – Cumulative dimension “A” tolerance shall the following (see Figure 3):
not exceed 0.059 over 6 in consecutive components. ON Semiconductor part number
3.2 Orientation Quantity
All polarized components must be oriented in one
Manufacturer’s name
direction. The cathode lead tape shall be blue and the
anode tape shall be white. See Figure 1. Date codes (when applicable; see note 3.3.1)
3.3 Reeling 4.0
3.3.1 – Components on any reel shall not represent Requirements differing from this ON Semiconductor
more than two date codes when date code standard shall be negotiated with the factory.
identification is required. The packages indicated in the following table are suitable
3.3.2 – Component’s leads shall be positioned for lead tape packaging. The table indicates the specific
perpendicularly between pairs of 0.250 inch tape. See devices (transient voltage suppressors and/or zeners) that
Figure 2. can be obtained from ON Semiconductor in reel packaging
and provides the appropriate packaging specification.
3.3.3 – A minimum 12 inch leader of tape shall be
provided before the first and last component on the
reel.

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Lead Tape Packaging Standards for Axial-Lead Components (continued)

Table 1. Packaging Details (all dimensions in inches)

MPQ
Device Quantity Component Tape Reel Reel Max Off
Product Title Per Reel Spacing Spacing Dimension Dimension Alignment
Case Type Category Suffix (Item 3.3.7) A Dimension B Dimension C D (Max) E
Case 17 Surmetic 40 & RL 4000 0.2 +/– 0.015 2.062 +/– 0.059 3 14 0.047
600 Watt TVS
Case 41A 1500 Watt TVS RL4 1500 0.4 +/– 0.02 2.062 +/– 0.059 3 14 0.047
Case 51-02 DO-7 Glass RL 3000 0.2 +/– 0.02 2.062 +/– 0.059 3 14 0.047
(For Reference only)
Case 59-03 DO-41 Glass & RL 6000 0.2 +/– 0.015 2.062 +/– 0.059 3 14 0.047
DO-41 Surmetic 30
Rectifier
Case 59-04 500 Watt TVS RL 5000 0.2 +/– 0.02 2.062 +/– 0.059 3 14 0.047
Rectifier
Case 194-04 110 Amp TVS RL 800 0.4 +/– 0.02 1.875 +/– 0.059 3 14 0.047
(Automotive)
Rectifier
Case 267-02 Rectifier RL 1500 0.4 +/– 0.02 2.062 +/– 0.059 3 14 0.047
Case 299 DO-35 Glass RL 5000 0.2 +/– 0.02 2.062 +/– 0.059 3 14 0.047

OverallLG
Kraft Paper Item3.1.2
Reel B

Roll Pad A
Item 3.1.1
Max Off
Alignment
E
Container
Tape, Blue Item 3.3.5 D1 D2
Tape, White 0.250
Item 3.2 Item 3.2 Both Sides Item 3.3.2
(Cathode) (Anode) 0.031
Item 3.3.5

Figure 1. Reel Packing Figure 2. Component Spacing

Optional Design

1.188

3.5 Dia.

Item 3.4
D
C

Figure 3. Reel Dimensions

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 Tape and Reel
TVS/Zener Surface Mount
Data for
Embossed Tape and Reel TVS/Zener
Embossed Tape and Reel is used to facilitate automatic pick and
place equipment feed requirements. The tape is used as the shipping Surface Mount
container for various products and requires a minimum of handling.
The antistatic/conductive tape provides a secure cavity for the product
Devices
when sealed with the “peel-back” cover tape.
• Used for Automatic Pick and Place Feed Systems
• Minimizes Product Handling PACKAGES
• EIA 481-1, 8 mm and 12 mm Taping of Surface Mount Components SOD-123 SOT-23
for Automatic Handling and EIA 481-2, 16 mm and 24 mm SMB SMC
Embossed Carrier Taping of Surface Mount Components for
Automatic Handling
• SOD-123, SOT-23 in 8 mm Tape, SOD–323
• SMB in 12 mm Tape
• SMC in 16 mm Tape

Ordering Information
Use the standard device title and add the required suffix as listed in
the option table below. Note that the individual reels have a finite
number of devices depending on the type of product contained in the
tape. Also note the minimum lot size is one full reel for each line item
and orders are required to be in increments of the single reel quantity.

SMA, SMB,
SOT-23 SOD-123, SOD–323 POWERMITE SMC
8 mm 8 mm 12 mm 16 mm

Pitch(1) Devices Per Reel

Tape Width Reel Size and Minimum
Minim m Device
Package Case Type (mm) (mm) (in) (inch)* Order Quantity Suffix
SOD-123, SOT-23, Case 318 8 4.0 ± 0.1 .157 ± .004 7 3,000 T1
SOD–323 8 13 10,000 T3
SMA Case 403B 12 8.0 ± 0.1 .315 ± .004 13 5,000 T3
SMB Case 403A 12 8.0 ± 0.1 .315 ± .004 13 2,500 T3
SMC Case 403 16 8.0 ± 0.1 .315 ± .004 13 2,500 T3
POWERMITE Case 457 12 8.0 ± 0.1 .315 ± .004 13 12,000 T3
SC–88 Case 419B 8 4.0 ± 0.1 .157 ± .004 7 3,000 T1/T2
SC–88A Case 419A 8 4.0 ± 0.1 .157 ± .004 7 3,000 T1/T2
SC–74 Case 318F 8 4.0 ± 0.1 .157 ± .004 7 3,000 T1
8 13 10,000 T3
(1)See Next Page.
* 7 inch reel = 180 mm, 13 inch reel = 330 mm

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 CARRIER TAPE SPECIFICATIONS

10 PITCHES
CUMULATIVE
TOLERANCE ON
TAPE
K P0 ± 0.2 mm
P2 (± 0.008″)
t D

TOP E
COVER
TAPE
A0
F W

B1 K0 B0
SEE
NOTE 1 P
D1
EMBOSSMENT CENTER LINES FOR COMPONENTS
OF CAVITY 2.0 mm x 1.2 mm
FOR MACHINE REFERENCE
AND LARGER
ONLY USER DIRECTION OF FEED
INCLUDING DRAFT AND RADII
CONCENTRIC AROUND B0

* TOP COVER
TAPE THICKNESS (t1)
BAR CODE
0.10 mm
R MIN LABEL
(.004″) MAX.
TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS R"
WITHOUT DAMAGE
BENDING RADIUS EMBOSSED
100 mm CARRIER
10° MAXIMUM COMPONENT ROTATION EMBOSSMENT
(3.937″)
1 mm MAX
TYPICAL
COMPONENT CAVITY
CENTER LINE
TAPE

1 mm
(.039″) MAX 250 mm
TYPICAL (9.843″)
COMPONENT CAMBER (TOP VIEW)
CENTER LINE ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250 mm

DIMENSIONS
Tape B1
Size Max(2) D D1 E F K P P0 P2 R Min T Max W Max
8mm 4.55mm 1.5
+
0.1mm 1.0Min 1.75
±
0.1mm 3.5
±
0.05mm 2.4mmMax 4.0
±
0.1mm 4.0
±
0.1mm 2.0
±
0.1mm 25mm 0.6mm 8.3mm
(.179″) -

0.0 (.039″) (.069
±
.004″)
004 ) (.138
±
.002″) (.094″) (.157
±
.004″) (.157
±
.004
004″)) (.079
±
.002
002″)) (.98″) (.024″)
(.024 ) (.327″)
004″″
( 0 9+
.00
(.059

12mm 8.2mm -
0.0) 1.5mmMin 5.5
±
0.05mm 6.4mmMax 4.0
±
0.1mm 30mm 12
±
.30mm
(.323″) (.060″) (.217
±
.002″) (.252″) (.157
±
.004″) (1.18″) (.470
±
.012″)
8.0
±
0.1mm
(.315
±
.004″)
16mm 12.1mm 7.5
±
0.10mm 7.9mmMax 4.0
±
0.1mm 16.3mm
(.476″) (.295
±
.004″) (.311″) (.157
±
.004″) (.642″)
8.0
±
0.1mm
(.315
±
.004″)
12.0
±
0.1 mm
(.472
±
.004″)
24mm 20.1mm 11.5
±
0.1mm 11.9mmMax 16.0
±
.01mm 24.3mm
(.791″) (.453
±
.004″) (.468″) (.63
±
.004″) (.957″)
Metric dimensions govern – English are in parentheses for reference only.
NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .5 mm max.,
NOTE 1: the component cannot rotate more than 10° within the determined cavity.
NOTE 2: If B1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders.

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 REEL CONFIGURATION
Metric Dimensions Govern — English are in parentheses for reference only

T MAX
OUTSIDE DIMENSION
MEASURED AT EDGE

1.5 mm MIN 13.0 mm ± 0.5 mm

(.06″) (.512″ ± .002″)

A 20.2 mm MIN 50 mm MIN

(.795″) (1.969″)

FULL RADIUS

INSIDE DIMENSION
G
MEASURED NEAR HUB

Size A Max G T Max

8 mm 330 mm 8.4 mm + 1.5 mm, –0.0 14.4 mm
(12.992″) (.33″ + .059″, –0.00) (.56″)
12 mm 330 mm 12.4 mm + 2.0 mm, –0.0 18.4 mm
(12.992″) (.49″ + .079″, –0.00) (.72″)
16 mm 360 mm 16.4 mm + 2.0 mm, –0.0 22.4 mm
(14.173″) (.646″ + .078″, –0.00) (.882″)
24 mm 360 mm 24.4 mm + 2.0 mm, –0.0 30.4 mm
(14.173″) (.961″ + .070″, –0.00) (1.197″)

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 TAPE LEADER AND TRAILER DIMENSIONS

Carrier Tape

END Cover Tape

START

Trailer Components Leader

(Note 2) (Note 1)
160 mm 390 mm
Top Cover Tape
(6.30) Min (15.35) Min

Metric dimensions govern

NOTES
1. There shall be a leader of 230 mm (9.05) minimum which may consist of carrier and/or cover tape followed
by a minimum of 160 mm (6.30) of empty carrier tape sealed with cover tape.
2. There shall be a trailer of 160 mm (6.30) minimum of empty carrier tape sealed with cover tape. The entire carrier
tape must release from the reel hub as the last portion of the tape unwinds from the reel without damage to the
carrier tape and the remaining components in the cavities.

ELECTRICAL POLARIZATION

TWO TERMINATION DEVICES

User Direction of Feed

Top Cover Tape Removed

Metric dimensions govern

NOTES

1. All polarized components must be oriented in one direction. For components with two terminations the cathode
shall be adjacent to the sprocket hole side.

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 CHAPTER 9
Package Outline Dimensions

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Package Outline Dimensions
SURMETIC 40
CASE 17–02
ISSUE C

NOTES:
1. LEAD DIAMETER AND FINISH NOT CONTROLLED
B WITHIN DIMENSION F.

INCHES MILLIMETERS
DIM MIN MAX MIN MAX
D A 0.330 0.350 8.38 8.89
K B 0.130 0.145 3.30 3.68
D 0.037 0.043 0.94 1.09
F F --- 0.050 --- 1.27
2 K 1.000 1.250 25.40 31.75

STYLE 1:
A PIN 1. ANODE
2. CATHODE

1
F
K

MOSORB
CASE 41A–02
ISSUE A

B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
D Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER
UNCONTROLLED IN DIMENSION P.

INCHES MILLIMETERS
K DIM MIN MAX MIN MAX
A 0.360 0.375 9.14 9.52
P B 0.190 0.205 4.83 5.21
D 0.038 0.042 0.97 1.07
K 1.00 --- 25.40 ---
P P --- 0.050 --- 1.27
A

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PACKAGE OUTLINE DIMENSIONS (continued)

GLASS/PLASTIC
DO–41
CASE 59–03
ISSUE M

B NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
D
K MILLIMETERS INCHES
DIM MIN MAX MIN MAX
F A 4.07 5.20 0.160 0.205
B 2.04 2.71 0.080 0.107
D 0.71 0.86 0.028 0.034
A F --- 1.27 --- 0.050
K 27.94 --- 1.100 ---

F
K

MINI MOSORB
CASE 59–04
ISSUE M

B NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
D
K MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 5.97 6.60 0.235 0.260
A B 2.79 3.05 0.110 0.120
D 0.76 0.86 0.030 0.034
K 27.94 --- 1.100 ---

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PACKAGE OUTLINE DIMENSIONS (continued)

GLASS DO–35/DO–204AH
CASE 299–02
ISSUE A

NOTES:
B 1. PACKAGE CONTOUR OPTIONAL WITHIN A AND B
HEAT SLUGS, IF ANY, SHALL BE INCLUDED
WITHIN THIS CYLINDER, BUT NOT SUBJECT TO
THE MINIMUM LIMIT OF B.
2. LEAD DIAMETER NOT CONTROLLED IN ZONE F
D TO ALLOW FOR FLASH, LEAD FINISH BUILDUP
K AND MINOR IRREGULARITIES OTHER THAN
F HEAT SLUGS.
3. POLARITY DENOTED BY CATHODE BAND.
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
F A 3.05 5.08 0.120 0.200
B 1.52 2.29 0.060 0.090
K D 0.46 0.56 0.018 0.022
F --- 1.27 --- 0.050
K 25.40 38.10 1.000 1.500
All JEDEC dimensions and notes apply.

SOT–23 (TO–236)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
L IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3 INCHES MILLIMETERS
B S DIM MIN MAX MIN MAX
1 2 A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
V G D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
C K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
H S 0.0830 0.1039 2.10 2.64
D J V 0.0177 0.0236 0.45 0.60
K

STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8: STYLE 9:

CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION 2. ANODE
3. COLLECTOR 3. COLLECTOR 3. CATHODE 3. CATHODE

STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. GATE 3. CATHODE-ANODE 3. ANODE 3. GATE 3. ANODE

STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE-ANODE

STYLE 20: STYLE 21: STYLE 22: STYLE 23: STYLE 24:
PIN 1. CATHODE PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE
2. ANODE 2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN
3. GATE 3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE

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PACKAGE OUTLINE DIMENSIONS (continued)

SC–74
CASE 318F–03
A
ISSUE E NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
L Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
6 5 4 IS THE MINIMUM THICKNESS OF BASE
S B MATERIAL.
1 2 3 4. 318F-01 AND -02 OBSOLETE. NEW STANDARD
318F-03.

INCHES MILLIMETERS
D DIM MIN MAX MIN MAX
G A 0.1142 0.1220 2.90 3.10
B 0.0512 0.0669 1.30 1.70
C 0.0354 0.0433 0.90 1.10
D 0.0098 0.0197 0.25 0.50
M G 0.0335 0.0413 0.85 1.05
J H 0.0005 0.0040 0.013 0.100
0.05 (0.002) C J 0.0040 0.0102 0.10 0.26
K 0.0079 0.0236 0.20 0.60
K L 0.0493 0.0649 1.25 1.65
H M 0 10  0 10 
S 0.0985 0.1181 2.50 3.00

STYLE 1: STYLE 2:
PIN 1. CATHODE PIN 1. NO CONNECTION
2. ANODE 2. COLLECTOR
3. CATHODE 3. EMITTER
4. CATHODE 4. NO CONNECTION
5. ANODE 5. COLLECTOR
6. CATHODE 6. BASE

SMC
CASE 403–03
ISSUE B
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D B
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.260 0.280 6.60 7.11
B 0.220 0.240 5.59 6.10
C 0.075 0.095 1.90 2.41
D 0.115 0.121 2.92 3.07
H 0.0020 0.0060 0.051 0.152
J 0.006 0.012 0.15 0.30
K 0.030 0.050 0.76 1.27
C P 0.020 REF 0.51 REF
S 0.305 0.320 7.75 8.13

J H
K P

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PACKAGE OUTLINE DIMENSIONS (continued)

SMB
D0–214AA
CASE 403A–03
S
ISSUE D

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D B
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.160 0.180 4.06 4.57
B 0.130 0.150 3.30 3.81
C 0.075 0.095 1.90 2.41
D 0.077 0.083 1.96 2.11
H 0.0020 0.0060 0.051 0.152
J 0.006 0.012 0.15 0.30
K 0.030 0.050 0.76 1.27
C
P 0.020 REF 0.51 REF
S 0.205 0.220 5.21 5.59

H
K P J

SMA
CASE 403B–01
ISSUE O
S

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
D B DIM MIN MAX MIN MAX
A 0.160 0.180 4.06 4.57
B 0.090 0.115 2.29 2.92
C 0.075 0.105 1.91 2.67
D 0.050 0.064 1.27 1.63
H 0.004 0.008 0.10 0.20
J 0.006 0.016 0.15 0.41
K 0.030 0.060 0.76 1.52
S 0.190 0.220 4.83 5.59
C

H
K J

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PACKAGE OUTLINE DIMENSIONS (continued)

SOD–123
CASE 425–04
ISSUE C

A
C NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
H Y14.5M, 1982.

ÂÂÂ
2. CONTROLLING DIMENSION: INCH.
1
INCHES MILLIMETERS

ÂÂÂ
DIM MIN MAX MIN MAX
A 0.055 0.071 1.40 1.80
B 0.100 0.112 2.55 2.85
C 0.037 0.053 0.95 1.35
K B D 0.020 0.028 0.50 0.70
E 0.01 --- 0.25 ---
H 0.000 0.004 0.00 0.10
J --- 0.006 --- 0.15
K 0.140 0.152 3.55 3.85

2
E
STYLE 1:
PIN 1. CATHODE
2. ANODE
D J

SOD–323
CASE 477–02
ISSUE B
NOTES:
K 1. DIMENSIONING AND TOLERANCING PER ANSI
A Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.

D 1 2 B MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 1.60 1.80 0.063 0.071
B 1.15 1.35 0.045 0.053
C 0.80 1.00 0.031 0.039
D 0.25 0.40 0.010 0.016
E E 0.15 REF 0.006 REF
H 0.00 0.10 0.000 0.004
J 0.089 0.177 0.0035 0.0070
C K 2.30 2.70 0.091 0.106

STYLE 1:
PIN 1. CATHODE
J H 2. ANODE
NOTE 3

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PACKAGE OUTLINE DIMENSIONS (continued)

SC–88A (SOT–323)
CASE 419A–01
A ISSUE E

G NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
V Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
DIM MIN MAX MIN MAX
5 4
A 0.071 0.087 1.80 2.20
B 0.045 0.053 1.15 1.35
S –B– C 0.031 0.043 0.80 1.10
1 2 3 D 0.004 0.012 0.10 0.30
G 0.026 BSC 0.65 BSC
H --- 0.004 --- 0.10
J 0.004 0.010 0.10 0.25
K 0.004 0.012 0.10 0.30
N 0.008 REF 0.20 REF
D 5 PL 0.2 (0.008) M B M
S 0.079 0.087 2.00 2.20
V 0.012 0.016 0.30 0.40
N

J
C

H K

STYLE 1: STYLE 2: STYLE 3: STYLE 4:

PIN 1. BASE PIN 1. ANODE PIN 1. ANODE 1 PIN 1. SOURCE 1
2. EMITTER 2. EMITTER 2. N/C 2. DRAIN 1/2
3. BASE 3. BASE 3. ANODE 2 3. SOURCE 1
4. COLLECTOR 4. COLLECTOR 4. CATHODE 2 4. GATE 1
5. COLLECTOR 5. CATHODE 5. CATHODE 1 5. GATE 2

STYLE 5: STYLE 6: STYLE 7:

PIN 1. CATHODE PIN 1. EMITTER PIN 1. BASE
2. COMMON ANODE 2. BASE 2. EMITTER
3. CATHODE 2 3. EMITTER 3. BASE
4. CATHODE 3 4. COLLECTOR 4. COLLECTOR
5. CATHODE 4 5. COLLECTOR 5. COLLECTOR

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PACKAGE OUTLINE DIMENSIONS (continued)

SC–88 (SOT–363)
CASE 419B–01
A ISSUE G
G
V

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
6 5 4 Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S –B– INCHES MILLIMETERS
DIM MIN MAX MIN MAX
1 2 3
A 0.071 0.087 1.80 2.20
B 0.045 0.053 1.15 1.35
C 0.031 0.043 0.80 1.10
D 0.004 0.012 0.10 0.30
G 0.026 BSC 0.65 BSC
D 6 PL 0.2 (0.008) M B M
H --- 0.004 --- 0.10
J 0.004 0.010 0.10 0.25
K 0.004 0.012 0.10 0.30
N N 0.008 REF 0.20 REF
S 0.079 0.087 2.00 2.20
V 0.012 0.016 0.30 0.40
J
C

K
H

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. EMITTER 2 CANCELLED CANCELLED PIN 1. CATHODE PIN 1. ANODE
2. BASE 2 2. CATHODE 2. ANODE
3. COLLECTOR 1 3. COLLECTOR 3. COLLECTOR
4. EMITTER 1 4. EMITTER 4. EMITTER
5. BASE 1 5. BASE 5. BASE
6. COLLECTOR 2 6. ANODE 6. CATHODE

STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:

PIN 1. ANODE 2 PIN 1. SOURCE 2 CANCELLED PIN 1. EMITTER 2 PIN 1. SOURCE 2
2. N/C 2. DRAIN 2 2. EMITTER 1 2. SOURCE 1
3. CATHODE 1 3. GATE 1 3. COLLECTOR 1 3. GATE 1
4. ANODE 1 4. SOURCE 1 4. BASE 1 4. DRAIN 1
5. N/C 5. DRAIN 1 5. BASE 2 5. DRAIN 2
6. CATHODE 2 6. GATE 2 6. COLLECTOR 2 6. GATE 2

STYLE 11: STYLE 12: STYLE 13: STYLE 14: STYLE 15:
PIN 1. CATHODE 2 PIN 1. ANODE 2 PIN 1. ANODE PIN 1. VREF PIN 1. ANODE
2. CATHODE 2 2. ANODE 2 2. N/C 2. GND 2. ANODE
3. ANODE 1 3. CATHODE 1 3. COLLECTOR 3. GND 3. ANODE
4. CATHODE 1 4. ANODE 1 4. EMITTER 4. IOUT 4. CATHODE
5. CATHODE 1 5. ANODE 1 5. BASE 5. VEN 5. CATHODE
6. ANODE 2 6. CATHODE 2 6. CATHODE 6. VCC 6. CATHODE

STYLE 16: STYLE 17: STYLE 18: STYLE 19:

PIN 1. BASE 1 PIN 1. BASE 1 PIN 1. VIN1 PIN 1. I OUT
2. EMITTER 2 2. EMITTER 1 2. VCC 2. GND
3. COLLECTOR 2 3. COLLECTOR 2 3. VOUT2 3. GND
4. BASE 2 4. BASE 2 4. VIN2 4. V CC
5. EMITTER 1 5. EMITTER 2 5. GND 5. V EN
6. COLLECTOR 1 6. COLLECTOR 1 6. VOUT1 6. V REF

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PACKAGE OUTLINE DIMENSIONS (continued)

POWERMITE
CASE 457–04
ISSUE D

NOTES:
F 1. DIMENSIONING AND TOLERANCING PER ANSI
–A– C Y14.5M, 1982.
J 0.08 (0.003) M T B S C S 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
S PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.

MILLIMETERS INCHES
TERM. 1 DIM MIN MAX MIN MAX
–B– A 1.75 2.05 0.069 0.081
B 1.75 2.18 0.069 0.086
K C 0.85 1.15 0.033 0.045
TERM. 2 D 0.40 0.69 0.016 0.027
F 0.70 1.00 0.028 0.039
H -0.05 +0.10 -0.002 +0.004
J 0.10 0.25 0.004 0.010
R K 3.60 3.90 0.142 0.154
L L 0.50 0.80 0.020 0.031
R 1.20 1.50 0.047 0.059
J S 0.50 REF 0.019 REF

H D
0.08 (0.003) M T B S C S
–T–

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 CHAPTER 10
Technical Information,
Application Notes and Articles

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321
Technical Information, Application Notes and Articles
Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . 323
Zener Diode Fabrication Techniques . . . . . . . . . . . . . 328
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 332
Zener Diode Characteristics . . . . . . . . . . . . . . . . . . . . 338
Temperature Compensated Zeners . . . . . . . . . . . . . . 350
Basic Voltage Regulation Using Zener Diodes . . . . 354
Zener Protective Circuits and Techniques:
Basic Design Considerations . . . . . . . . . . . . . . . . 364
Zener Voltage Sensing Circuits and Applications . . 374
Miscellaneous Applications of
Zener Type Devices . . . . . . . . . . . . . . . . . . . . . . . . 381
Transient Voltage Suppression . . . . . . . . . . . . . . . . . 383
AN784 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 402
AN843 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 404
Design Considerations and Performance of
Temperature Compensated Zener Diodes . . . . . 417
MOSORBs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 422
AR450 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 426
Measurement of Zener Voltage to Thermal
Equilibrium with Pulsed Test Current . . . . . . . . . . 439
Sales Office List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 447
Standard Document Type Definitions . . . . . . . . . . . . 448

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 ZENER DIODE THEORY

INTRODUCTION now see. Silicon is a tetravalent element, one with four

The zener diode is a semiconductor device unique in its valence electrons in the outer shell; all are virtually locked
mode of operation and completely unreplaceable by any into place by the covalent bonds of the crystal lattice
other electronic device. Because of its unusual properties it structure, as shown schematically in Figure 1a. When
fills a long-standing need in electronic circuitry. It provides, controlled amounts of donor impurities (Group V elements)
among other useful functions, a constant voltage reference such as phosphorus are added, the pentavalent phosphorus
or voltage control element available over a wide spectrum of atoms entering the lattice structure provide extra electrons
voltage and power levels. not required by the covalent bonds. These impurities are
The zener diode is unique among the semiconductor called donor impurities since they “donate” a free electron
family of devices because its electrical properties are to the lattice. These donated electrons are free to drift from
derived from a rectifying junction which operates in the negative to positive across the crystal when a field is applied,
reverse breakdown region. In the sections that follow, the as shown in Figure 1b. The “N” nomenclature for this kind
reverse biased rectifying junction, some of the terms of conductivity implies “negative” charge carriers.
associated with it, and properties derived from it will be In P-type conductivity, the charges that carry electric
discussed fully. current across the crystal act as if they were positive charges.
The zener diode is fabricated from the element silicon. We know that electricity is always carried by drifting
Special techniques are applied in the fabrication of zener electrons in any material, and that there are no mobile
diodes to create the required properties. positively charged carriers in a solid. Positive charge
This manual was prepared to acquaint the engineer, the carriers can exist in gases and liquids in the form of positive
equipment designer and manufacturer, and the experimenter ions but not in solids. The positive character of the current
with the fundamental principles, design characteristics, flow in the semiconductor crystal may be thought of as the
applications and advantages of this important movement of vacancies (called holes) in the covalent lattice.
semiconductor device. These holes drift from positive toward negative in an electric
field, behaving as if they were positive carriers.
SEMICONDUCTOR THEORY P-type conductivity in semiconductors result from adding
acceptor impurities (Group III elements) such as boron to
The active portion of a zener diode is a semiconductor PN silicon to the semiconductor crystal. In this case, boron
junction. PN junctions are formed in various kinds of atoms, with three valence electrons, enter the tetravalent
semiconductor devices by several techniques. Among these silicon lattice. Since the covalent bonds cannot be satisfied
are the widely used techniques known as alloying and by only three electrons, each acceptor atom leaves a hole in
diffusion which are utilized in fabricating zener PN the lattice which is deficient by one electron. These holes
junctions to provide excellent control over zener breakdown readily accept electrons introduced by external sources or
voltage. created by radiation or heat, as shown in Figure 1c. Hence
At the present time, zener diodes use silicon as the basic the name acceptor ion or acceptor impurity. When an
material in the formation of their PN junction. Silicon is in external circuit is connected, electrons from the current
Group IV of the periodic table (tetravalent) and is classed as source “fill up” these holes from the negative end and jump
a “semiconductor” due to the fact that it is a poor conductor from hole to hole across the crystal or one may think of this
in a pure state. When controlled amounts of certain process in a slightly different but equivalent way, that is as
“impurities” are added to a semiconductor it becomes a the displacement of positive holes toward the negative
better conductor of electricity. Depending on the type of terminal. It is this drift of the positively charged holes which
impurity added to the basic semiconductor, its conductivity accounts for the term P-type conductivity.
may take two different forms, called P- and N-type When semiconductor regions of N- and P-type
respectively. conductivities are formed in a semiconductor crystal
N-type conductivity in a semiconductor is much like the adjacent to each other, this structure is called a PN junction.
conductivity due to the drift of free electrons in a metal. In Such a junction is responsible for the action of both zener
pure silicon at room temperature there are too few free diodes and rectifier devices, and will be discussed in the next
electrons to conduct current. However, there are ways of section.
introducing free electrons into the crystal lattice as we shall

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 ELECTRONS ARE LOCKED Conversely, electrons in the N-type are readily attracted by
IN COVALENT BONDS the positive polarity in the other direction.
When a PN junction is reverse biased, the P-type side is
Si Si made more negative than the N-type side. (See Figure 2b.)
At voltages below the breakdown of the junction, there is
very little current flow across the junction interface. At first
Si Si Si
thought one would expect no reverse current under reverse
bias conditions, but several effects are responsible for this
small current.
Si Si
Under this condition the positive holes in the P-type
semiconductor are repelled from the junction interface by
(a) Lattice Structures of the positive polarity applied to the N side, and conversely,
Pure Silicon the electrons in the N material are repelled from the interface
by the negative polarity of the P side. This creates a region
extending from the junction interface into both P- and
LOCKED COVALENT N-type materials which is completely free of charge carriers,
Si Si
BOND ELECTRONS that is, the region is depleted of its charge carriers. Hence,
this region is usually called the depletion region.
Si P Si Although the region is free of charge carriers, the P-side
of the depletion region will have an excess negative charge
- due to the presence of acceptor ions which are, of course,
Si Si fixed in the lattice; while the N-side of the depletion region
FREE ELECTRON has an excess positive charge due to the presence of donor
FROM PHOSPHOROUS
ATOM DRIFTS TOWARD
ions. These opposing regions of charged ions create a strong
APPLIED FIELD electric field across the PN junction responsible for the
APPLIED POSITIVE POLE.
(b) N-Type Silicon creation of reverse current.
The semiconductor regions are never perfect; there are
always a few free electrons in P material and few holes in N
material. A more significant factor, however, is the fact that
Si Si INCOMPLETED great magnitudes of electron-hole pairs may be thermally
COVALENT BOND
generated at room temperatures in the semiconductor. When
+ these electron-hole pairs are created within the depletion
Si B Si
region, then the intense electric field mentioned in the above
-
paragraph will cause a small current to flow. This small
current is called the reverse saturation current, and tends to
Si Si
maintain a relatively constant value for a fixed temperature
at all voltages. The reverse saturation current is usually
APPLIED FIELD THIS ELECTRON JUMPS INTO negligible compared with the current flow when the junction
HOLE LEFT BY BORON ATOM. is forward biased. Hence, we see that the PN junction, when
HOLE POSITION IS DISPLACED not reverse biased beyond breakdown voltage, will conduct
TO RIGHT. THIS RESULTS IN heavily in only one direction. When this property is utilized
A DRIFT OF HOLES TOWARD
THE NEGATIVE POLE, GIVING
in a circuit we are employing the PN junction as a rectifier.
THEM THE CHARACTER OF Let us see how we can employ its reverse breakdown
MOBILE POSITIVE CHARGES. characteristics to an advantage.
(c) P-Type Silicon As the reverse voltage is increased to a point called the
voltage breakdown point and beyond, current conduction
across the junction interface increases rapidly. The break
Figure 1. Semiconductor Structure from a low value of the reverse saturation current to heavy
conductance is very sharp and well defined in most PN
THE SEMICONDUCTOR DIODE junctions. It is called the zener knee. When reverse voltages
In the forward-biased PN junction, Figure 2a, the P region greater than the voltage breakdown point are applied to the
is made more positive than the N region by an external PN junction, the voltage drop across the PN junction
circuit. Under these conditions there is a very low resistance remains essentially constant at the value of the breakdown
to current flow in the circuit. This is because the holes in the voltage for a relatively wide range of currents. This region
positive P-type material are very readily attracted across the beyond the voltage breakdown point is called the zener
junction interface toward the negative N-type side. control region.

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 CHARGES FROM BOTH P AND N REGIONS
P N DRIFT ACROSS JUNCTION AT VERY LOW
APPLIED VOLTAGES.
LARGE (a) Forward-Based PN
CURRENT Junction

APPLIED FIELD

N P

VERY AT APPLIED VOLTAGES BELOW THE CRITICAL

SMALL BREAKDOWN LEVEL ONLY A FEW CHARGES
CURRENT DRIFT ACROSS THE INTERFACE.
(b) Reverse-Biased PN
Junction

SEVERAL VOLTS
APPLIED FIELD

Figure 2. Effects of Junction Bias

ZENER CONTROL REGION: VOLTAGE VBREAKDOWN

BREAKDOWN MECHANISMS VREV

Figure 3 depicts the extension of reverse biasing to the

point where voltage breakdown occurs. Although all PN
junctions exhibit a voltage breakdown, it is important to
know that there are two distinct voltage breakdown
mechanisms. One is called zener breakdown and the other is IREV
SLOPE
called avalanche breakdown. In zener breakdown the value
of breakdown voltage decreases as the PN junction
temperature increases; while in avalanche breakdown the
value of the breakdown voltage increases as the PN junction
temperature increases. Typical diode breakdown
characteristics of each category are shown in Figure 4. The Figure 3. Reverse Characteristic Extended
factor determining which of the two breakdown to Show Breakdown Effect
mechanisms occurs is the relative concentrations of the
impurities in the materials which comprise the junction. If presence of more ions/unit volume in the less resistive
two different resistivity P-type materials are placed against material. A junction that results in a narrow depletion region
two separate but equally doped low-resistivity pieces of will therefore develop a high field intensity and breakdown
N-type materials, the depletion region spread in the low by the zener mechanism. A junction that results in a wider
resistivity P-type material will be smaller than the depletion depletion region and, thus, a lower field intensity will break
region spread in the high resistivity P-type material. down by the avalanche mechanism before a zener
Moreover, in both situations little of the resultant depletion breakdown condition can be reached.
width lies in the N material if its resistivity is low compared The zener mechanism can be described qualitatively as
to the P-type material. In other words, the depletion region follows: because the depletion width is very small, the
always spreads principally into the material having the application of low reverse bias (5 volts or less) will cause a
highest resistivity. Also, the electric field (voltage per unit field across the depletion region on the order of 3 x 105V/cm.
length) in the less resistive material is greater than the A field of such high magnitude exerts a large force on the
electric field in the material of greater resistivity due to the valence electrons of a silicon atom, tending to separate them

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 VREV (VOLTS) VREV (VOLTS)
4 3 2 1 30 25 20 15 10 5

IREV IREV

25°C 65°C 65°C 25°C

(A) (B)

ZENER BREAKDOWN AVALANCHE BREAKDOWN OF A PN FUNCTION

OF A PN FUNCTION

Figure 4. Typical Breakdown Diode Characteristics. Note Effects of Temperature for Each Mechanism

from their respective nuclei. Actual rupture of the covalent before combining with a carrier of opposite conductivity).
bonds occurs when the field approaches 3 x 105V/cm. Thus, Therefore, when temperature is increased, the increased
electron-hole pairs are generated in large numbers and a lattice vibration shortens the distance a carrier travels before
sudden increase of current is observed. Although we speak colliding and thus requires a higher voltage to get it across
of a rupture of the atomic structure, it should be understood the depletion region.
that this generation of electron-hole pairs may be carried on As established earlier, the applied reverse bias causes a
continuously as long as an external source supplies small movement of intrinsic electrons from the P material to
additional electrons. If a limiting resistance in the circuit the potentially positive N material and intrinsic holes from
external to the diode junction does not prevent the current the N material to the potentially negative P material (leakage
from increasing to high values, the device may be destroyed current). As the applied voltage becomes larger, these
due to overheating. The actual critical value of field causing electrons and holes increasingly accelerate. There are also
zener breakdown is believed to be approximately collisions between these intrinsic particles and bound
3 x 105V/cm. On most commercially available silicon electrons as the intrinsic particles move through the
diodes, the maximum value of voltage breakdown by the depletion region. If the applied voltage is such that the
zener mechanism is 8 volts. In order to fabricate devices intrinsic electrons do not have high velocity, then the
with higher voltage breakdown characteristics, materials collisions take some energy from the intrinsic particles,
with higher resistivity, and consequently, wider depletion altering their velocity. If the applied voltage is increased,
regions are required. These wide depletion regions hold the collision with a valence electron will give considerable
field strength down below the zener breakdown value energy to the electron and it will break free of its covalent
(3 x 105V/cm). Consequently, for devices with breakdown bond. Thus, one electron by collision, has created an
voltage lower than 5 volts the zener mechanism electron-hole pair. These secondary particles will also be
predominates, between 5 and 8 volts both zener and an accelerated and participate in collisions which generate new
avalanche mechanism are involved, while above 8 volts the electron-hole pairs. This phenomenon is called carrier
avalanche mechanism alone takes over. multiplication. Electron-hole pairs are generated so quickly
The decrease of zener breakdown voltage as junction and in such large numbers that there is an apparent avalanche
temperature increases can be explained in terms of the or self-sustained multiplication process (depicted
energies of the valence electrons. An increase of temperature graphically in Figure 5). The junction is said to be in
increases the energies of the valence electrons. This weakens breakdown and the current is limited only by resistance
the bonds holding the electrons and consequently, less applied external to the junction. Zener diodes above 7 to 8 volts
voltage is necessary to pull the valence electrons from their exhibit avalanche breakdown.
position around the nuclei. Thus, the breakdown voltage As junction temperature increases, the voltage breakdown
decreases as the temperature increases. point for the avalanche mechanism increases. This effect can
The dependence on temperature of the avalanche be explained by considering the vibration displacement of
breakdown mechanism is quite different. Here the depletion atoms in their lattice increases, and this increased
region is of sufficient width that the carriers (electrons or displacement corresponds to an increase in the probability
holes) can suffer collisions before traveling the region that intrinsic particles in the depletion region will collide
completely i.e., the depletion region is wider than one with the lattice atoms. If the probability of an intrinsic
mean-free path (the average distance a carrier can travel particle-atom collision increases, then the probability that a

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 LARGE CURRENT REVERSEBIASED
PN JUNCTION IN AVALANCHE
N P
WHEN THE APPLIED VOLTAGE IS
ABOVE THE BREAKDOWN POINT, A
FEW INJECTED ELECTRONS RECEIVE
R ENOUGH ACCELERATION FROM THE
S FIELD TO GENERATE NEW ELECTRONS
BY COLLISION. DURING THIS PROCESS
THE VOLTAGE DROP ACROSS THE
JUNCTION REMAINS CONSTANT.

RS ABSORBS EXCESS VOLTAGE.

CONSTANT VOLTAGE DROP

Figure 5. PN Junction in Avalanche Breakdown

given intrinsic particle will obtain high momentum a different symbol. For the leakage current region, i.e.
decreases, and it follows that the low momentum intrinsic non-conducting region, between 0 volts and VZ, the reverse
particles are less likely to ionize the lattice atoms. Naturally, current is denoted by the symbol IR; but for the zener control
increased voltage increases the acceleration of the intrinsic region, VR ≥ VZ, the reverse current is denoted by the
particles, providing higher mean momentum and more symbol IZ. IR is usually specified at a reverse voltage
electron-hole pairs production. If the voltage is raised VR ≈ 0.8 VZ.
sufficiently, the mean momentum becomes great enough to The PN junction breakdown voltage, VZ, is usually called
create electron-hole pairs and carrier multiplication results. the zener voltage, regardless whether the diode is of the
Hence, for increasing temperature, the value of the zener or avalanche breakdown type. Commercial zener
avalanche breakdown voltage increases. diodes are available with zener voltages from about
1.8 V – 400 V. For most applications the zener diode is
VOLT-AMPERE CHARACTERISTICS operated well into the breakdown region (IZT to IZM). Most
The zener volt-ampere characteristics for a typical 30 volt manufacturers give an additional specification of IZK
zener diode is illustrated in Figure 6. It shows that the zener (= 5 mA in Figure 6) to indicate a minimum operating
diode conducts current in both directions; the forward current to assure reasonable regulation.
current IF being a function of forward voltage VF. Note that This minimum current IZK varies in the various types of
IF is small until VF ≈ 0.65 V; then IF increases very rapidly. zener diodes and, consequently, is given on the data sheets.
For VF > 0.65 V IF is limited primarily by the circuit The maximum zener current IZM should be considered the
resistance external to the diode. maximum reverse current recommended by the
manufacturer. Values of IZM are usually given in the data
15 sheets.
FORWARD
I F (AMPS)

CHARACTERISTIC TYPICAL Between the limits of IZK and IZM, which are 5 mA and
10 1400 mA (1.4 Amps) in the example of Figure 6, the voltage
across the diode is essentially constant, and ≈ VZ. This
IR 5
ZZ K plateau region has, however, a large positive slope such that
REVERSE CURRENT (AMPS)

the precise value of reverse voltage will change slightly as

0
VZ IZK = 5 mA IZT a function of IZ. For any point on this plateau region one may
420 mA
calculate an impedance using the incremental magnitudes of
0.5
ZZT the voltage and current. This impedance is usually called the
IZM zener impedance ZZ, and is specified for most zener diodes.
REVERSE 1
Most manufacturers measure the maximum zener
1.40 A CHARACTERISTIC
1.5 impedance at two test points on the plateau region. The first
30 20 10 0 0.5 1 1.5 is usually near the knee of the zener plateau, ZZK, and the
VR VF
(VOLTS) (VOLTS) latter point near the midrange of the usable zener current
Figure 6. Zener Diode Characteristics excursion. Two such points are illustrated in Figure 6.
This section was intended to introduce the reader to a few
The reverse current is a function of the reverse voltage VR of the major terms used with zener diodes. A complete
but for most prNO TAGactical purposes is zero until the description of these terms may be found in chapter four. In
reverse voltage approaches VZ, the PN junction breakdown chapter four a full discussion of zener leakage, DC
voltage, at which time the reverse current increases very breakdown, zener impedance, temperature coefficients and
rapidly. Since the reverse current is small for VR < VZ, but many other topics may be found.
great for VR > VZ each of the current regions is specified by

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 ZENER DIODE FABRICATION TECHNIQUES

INTRODUCTION have the same surge carrying capability as diffused diodes.

A brief exposure to the techniques used in the fabrication The manufacturing process begins with the growing of high
of zener diodes can provide the engineer with additional quality silicon crystals.
insight using zeners in their applications. That is, an Crystals for ON Semiconductor zener diodes are grown
understanding of zener fabrication makes the capabilities using the Czochralski technique, a widely used process
and limitations of the zener diode more meaningful. This which begins with ultra-pure polycrystalline silicon. The
chapter discusses the basic steps in the fabrication of the polycrystalline silicon is first melted in a nonreactive
zener from crystal growing through final testing. crucible held at a temperature just above the melting point.
A carefully controlled quantity of the desired dopant
ZENER DIODE WAFER FABRICATION impurity, such as phosphorus or boron is added. A high
quality seed crystal of the desired crystalline orientation is
The major steps in the manufacture of zeners are provided then lowered into the melt while rotating. A portion of this
in the process flow in Figure 1. It is important to point out seed crystal is allowed to melt into the molten silicon. The
that the manufacturing steps vary somewhat from seed is then slowly pulled and continues to rotate as it is
manufacturer to manufacturer, and also vary with the type of raised from the melt. As the seed is raised, cooling takes
zener diode produced. This is driven by the type of package place and material from the melt adheres to it, thus forming
required as well as the electrical characteristics desired. For a single crystal ingot. With this technique, ingots with
example, alloy diffused devices provide excellent low diameters of several inches can be fabricated.
voltage reference with low leakage characteristics but do not

SILICON CRYSTAL WAFER OXIDE

GROWING PREPARATION PASSIVATION

ANODE JUNCTION
WAFER THINNING
METALLIZATION FORMATION

CATHODE WAFER
WAFER DICING
METALLIZATION TESTING

LEAD
TEST ASSEMBLY
FINISH

MARK TEST PACKAGE

SHIP

Figure 1. General Flow of the Zener Diode Process

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 SILICON DIOXIDE SELECTIVELY REMOVED
SILICON DIOXIDE GROWTH

SiO2

Si

(a) (b)

DOPANT ATOMS DEPOSITED ONTO DOPANT ATOMS DIFFUSE INTO SILICON

THE EXPOSED SILICON BUT NOT APPRECIABLY INTO THE SILICON DIOXIDE

(c) (d)

Figure 2. Basic Fabrication Steps in the Silicon Planar Process: a) oxide formation, b) selective oxide removal,
c) deposition of dopant atoms, d) junction formation by diffusion of dopant atoms.

Once the single-crystal silicon ingot is grown, it is tested Dopant is then introduced onto the wafer surface using
for doping concentration (resistivity), undesired impurity various techniques such as aluminum alloy for low voltage
levels, and minority carrier lifetime. The ingot is then sliced devices, ion-implantation, spin-on dopants, or chemical
into thin, circular wafers. The wafers are then chemically vapor deposition. Once the dopant is deposited, the
etched to remove saw damage and polished in a sequence of junctions are formed in a subsequent high temperature (1100
successively finer polishing grits until a mirror-like defect to 1250 degrees celcius are typical) drive-in. The resultant
free surface is obtained. The wafers are then cleaned and junction profile is determined by the background
placed in vacuum sealed wafer carriers to prevent any concentration of the starting substrate, the amount of dopant
contamination from getting on them. At this point, the placed at the surface, and amount of time and temperature
wafers are ready to begin device fabrication. used during the dopant drive-in. This junction profile
Zener diodes can be manufactured using different determines the electrical characteristics of the device.
processing techniques such as planar processing or mesa During the drive-in cycle, additional passivation oxide is
etched processing. The majority of ON Semiconductor grown providing additional protection for the devices.
zener diodes are manufactured using the planar technique as After junction formation, the wafers are then processed
shown in Figure 2. through what is called a getter process. The getter step
The planar process begins by growing an ultra-clean utilizes high temperature and slight stress provided by a
protective silicon dioxide passivation layer. The oxide is highly doped phosphosilicate glass layer introduced into the
typically grown in the temperature range of 900 to 1200 backside of the wafers. This causes any contaminants in the
degrees celcius. Once the protective layer of silicon dioxide area of the junction to diffuse away from the region. This
has been formed, it must be selectively removed from those serves to improve the reverse leakage characteristic and the
areas into which dopant atoms will be introduced. This is stability of the device. Following the getter process, a second
done using photolithographic techniques. photo resist step opens the contact area in which the anode
First a light sensitive solution called photo resist is spun metallization is deposited.
onto the wafer. The resist is then dried and a photographic Metal systems for ON Semiconductor’s zener diodes are
negative or mask is placed over the wafer. The resist is then determined by the requirements of the package. The metal
exposed to ultraviolet light causing the molecules in it to systems are deposited in ultra-clean vacuum chambers
cross link or polymerize becoming very rigid. Those areas utilizing electron-beam evaporation techniques. Once the
of the wafer that are protected by opaque portions of the metal is deposited, photo resist processing is utilized to form
mask are not exposed and are developed away. The oxide is the desired patterns. The wafers are then lapped to their final
then etched forming the exposed regions in which the dopant thickness and the cathode metallization deposited using the
will be introduced. The remaining resist is then removed and same e-beam process.
the wafers carefully cleaned for the doping steps.

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 The quality of the wafers is closely monitored throughout a solder disc is placed into each cavity and then a die is put
the process by using statistical process control techniques in on top. A solder disc is put in on top of the die. Another
and careful microscopic inspections at critical steps. Special assembly boat containing only leads is mated to the boat
wafer handling equipment is used throughout the containing the leads, die, and two solder discs. The boats are
manufacturing process to minimize contamination and to passed through the assembly furnace; this operation requires
avoid damaging the wafers in any way. This further only one pass through the furnace.
enhances the quality and stability of the devices. After assembly, the leads on the Surmetic 30s, 40s and
Upon completion of the fabrication steps, the wafers are MOSORBs are plated with a tin-lead alloy making them
electrically probed, inspected, and packaged for shipment to readily solderable and corrosion resistant.
the assembly operations. All ON Semiconductor zener
diode product is sawn using 100% saw-through techniques Double Slug (DO-35 and DO-41)
stringently developed to provide high quality silicon die. Double slugs receive their name from the dumet slugs, one
attached to one end of each lead. These slugs sandwich the
ZENER DIODE ASSEMBLY pre-tinned die between them and are hermetically sealed to
Surmetic 30, 40 and MOSORB the glass envelope or body during assembly. Figure 4 shows
The plastic packages (Surmetic 30, 40 and MOSORBs) typical assembly.
are assembled using oxygen free high conductivity copper The assembly begins with the copper clad steel leads
leads for efficient heat transfer from the die and allowing being loaded into assembly “boats.” Every other boat load
maximum power dissipation with a minimum of external of leads has a glass body set over the slug. A pre-tinned die
heatsinking. Figure 3 shows typical assembly. The leads are is placed into each glass body and the other boat load of leads
of nail head construction, soldered directly to the die, which is mated to the boat holding the leads, body and die. These
further enhances the heat dissipating capabilities of the mated boats are then placed into the assembly furnace where
package. the total mass is heated. Each glass body melts; and as the
The Surmetic 30s, 40s and MOSORBs are basically boat proceeds through the cooling portion of the furnace
assembled in the same manner; the only difference being the chamber, the tin which has wetted to each slug solidifies
MOSORBs are soldered together using a solder disc forming a bond between the die and both slugs. The glass
between the lead and die whereas the Surmetic 30s and hardens, attaching itself to the sides of the two slugs forming
Surmetic 40s utilize pre-soldered leads. the hermetic seal. The above illustrates how the diodes are
Assembly is started on the Surmetic 30 and 40 by loading completely assembled using a single furnace pass
the leads into assembly boats and pre-soldering the nail minimizing assembly problems.
heads. After pre-soldering, one die is then placed into each The encapsulated devices are then processed through lead
cavity of one assembly boat and another assembly boat is finish. This consists of dipping the leads in molten tin/lead
then mated to it. Since the MOSORBs do not use solder alloy. The solder dipped leads produce an external
pre-soldered leads, the leads are put into the assembly boat, finish which is tarnish-resistant and very solderable.

OFHC COPPER LEAD,

SOLDER PLATED

PLASTIC
(THERMO SET)
ENCAPSULATED
LEAD, STEEL, CU CLAD
NAILHEAD LEAD SOLDER DIPPED
SLUG DUMET
ZENER DIE Sn Pb GLASS SLEEVE
PASSIVATED
NAILHEAD LEAD ZENER DIE

OFHC COPPER LEAD,

SOLDER PLATED

Figure 3. Double-Slug Plastic Figure 4. Double Slug Glass

Zener Construction Zener Construction

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 ZENER DIODE TEST, MARK AND PACKAGING parameters as the units are being tested to ensure that the lot
Double Slug, Surmetic 30, 40 and MOSORB is testing well to the process average and compared against
other lots of the same voltage.
After lead finish, all products are final tested, whether After testing, the units are marked as required by the
they are double slug or of Surmetic construction, all are 100 specification. The markers are equipped to polarity orient
percent final tested for zener voltage, leakage current, the devices as well as perform 100% redundant test prior to
impedance and forward voltage drop. packaging.
Process average testing is used which is based upon the After marking, the units are packaged either in “bulk”
averages of the previous lots for a given voltage line and form or taped and reeled or taped and ammo packed to
package type. Histograms are generated for the various accommodate automatic insertion.

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 RELIABILITY
INTRODUCTION distributions will be centered within the specification limits
ON Semiconductor’s Quality System maintains with a product distribution of plus or minus Six Sigma about
“continuous product improvement” goals in all phases of the mean. Six Sigma capability, shown graphically in Figure 1,
operation. Statistical process control (SPC), quality control details the benefit in terms of yield and outgoing quality
sampling, reliability audits and accelerated stress testing levels. This compares a centered distribution versus a 1.5
techniques monitor the quality and reliability of its products. sigma worst case distribution shift.
Management and engineering skills are continuously New product development at ON Semiconductor requires
upgraded through training programs. This maintains a more robust design features that make them less sensitive to
unified focus on Six Sigma quality and reliability from the minor variations in processing. These features make the
inception of the product to final customer use. implementation of SPC much easier.
A complete commitment to SPC is present throughout
STATISTICAL PROCESS CONTROL ON Semiconductor. All managers, engineers, production
operators, supervisors and maintenance personnel have
ON Semiconductor’s Discrete Group is continually received multiple training courses on SPC techniques.
pursuing new ways to improve product quality. Initial design Manufacturing has identified 22 wafer processing and 8
improvement is one method that can be used to produce a assembly steps considered critical to the processing of zener
superior product. Equally important to outgoing product products. Processes, controlled by SPC methods, that have
quality is the ability to produce product that consistently shown significant improvement are in the diffusion,
conforms to specification. Process variability is the basic photolithography and metallization areas.
enemy of semiconductor manufacturing since it leads to To better understand SPC principles, brief explanations
product variability. Used in all phases of have been provided. These cover process capability,
ON Semiconductor’s product manufacturing, implementation and use.
STATISTICAL PROCESS CONTROL (SPC) replaces
variability with predictability. The traditional philosophy in
the semiconductor industry has been adherence to the data
sheet specification. Using SPC methods assures the product
6σ 5s 4σ 3σ 2σ 1σ 0 1σ 2σ 3σ 4σ 5σ 6σ
will meet specific process requirements throughout the
manufacturing cycle. The emphasis is on defect prevention, Standard Deviations From Mean
not detection. Predictability through SPC methods requires Distribution Centered Distribution Shifted ± 1.5
the manufacturing culture to focus on constant and At ± 3 σ 2700 ppm defective 66810 ppm defective
99.73% yield 93.32% yield
permanent improvements. Usually these improvements
At ± 4 σ 63 ppm defective 6210 ppm defective
cannot be bought with state-of-the-art equipment or 99.9937% yield 99.379% yield
automated factories. With quality in design, process and
At ± 5 σ 0.57 ppm defective 233 ppm defective
material selection, coupled with manufacturing 99.999943% yield 99.9767% yield
predictability, ON Semiconductor can produce world class At ± 6 σ 0.002 ppm defective 3.4 ppm defective
products. 99.9999998% yield 99.99966% yield
The immediate effect of SPC manufacturing is
predictability through process controls. Product centered and Figure 1. AOQL and Yield from a Normal Distribution of
distributed well within the product specification benefits ON Product With 6σ Capability
Semiconductor with fewer rejects, improved yields and lower
cost. The direct benefit to ON Semiconductor’s customers PROCESS CAPABILITY
includes better incoming quality levels, less inspection time
and ship-to-stock capability. Circuit performance is often One goal of SPC is to ensure a process is CAPABLE.
dependent on the cumulative effect of component variability. Process capability is the measurement of a process to
Tightly controlled component distributions give the customer produce products consistently to specification
greater circuit predictability. Many customers are also requirements. The purpose of a process capability study is
converting to just-in-time (JIT) delivery programs. These to separate the inherent RANDOM VARIABILITY from
programs require improvements in cycle time and yield ASSIGNABLE CAUSES. Once completed, steps are taken
predictability achievable only through SPC techniques. The to identify and eliminate the most significant assignable
benefit derived from SPC helps the manufacturer meet the causes. Random variability is generally present in the
customer’s expectations of higher quality and lower cost system and does not fluctuate. Sometimes, these are
product. considered basic limitations associated with the machinery,
Ultimately, ON Semiconductor will have Six Sigma materials, personnel skills or manufacturing methods.
capability on all products. This means parametric Assignable cause inconsistencies relate to time variations in
yield, performance or reliability.

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 ? ?
? ?
? ? ?
? ? ? ?

PREDICTION
PREDICTION

TIME
TIME
SIZE
SIZE
Process “under control” – all assignable causes are
removed and future distribution is predictable.

Figure 2. Impact of Assignable Causes on Process Predictable

Lower Upper
Specification Limit Specification Limit
In control assignable In control and capable
causes eliminated (variation from random
TIME TIME variability reduced)

Out of control SIZE In control but not capable

(assignable causes present) (variation from random variability
excessive)

SIZE
Figure 3. Difference Between Process Control and Process Capability

Traditionally, assignable causes appear to be random due SPC IMPLEMENTATION AND USE
to the lack of close examination or analysis. Figure 2 shows The Discrete Group uses many parameters that show
the impact on predictability that assignable cause can have. conformance to specification. Some parameters are
Figure 3 shows the difference between process control and sensitive to process variations while others remain constant
process capability. for a given product line. Often, specific parameters are
A process capability study involves taking periodic influenced when changes to other parameters occur. It is
samples from the process under controlled conditions. The both impractical and unnecessary to monitor all parameters
performance characteristics of these samples are charted using SPC methods. Only critical parameters that are
against time. In time, assignable causes can be identified and sensitive to process variability are chosen for SPC
engineered out. Careful documentation of the process is key monitoring. The process steps affecting these critical
to accurate diagnosis and successful removal of the parameters must be identified also. It is equally important to
assignable causes. Sometimes, the assignable causes will find a measurement in these process steps that correlates
remain unclear requiring prolonged experimentation. with product performance. This is called a critical process
Elements which measure process variation control and parameter.
capability are Cp and Cpk respectively. Cp is the Once the critical process parameters are selected, a sample
specification width divided by the process width or Cp = plan must be determined. The samples used for
(specification width) / 6σ. Cpk is the absolute value of the measurement are organized into RATIONAL
closest specification value to the mean, minus the mean, SUBGROUPS of approximately 2 to 5 pieces. The
divided by half the process width or Cpk = | closest subgroup size should be such that variation among the
specification — X / 3σ. samples within the subgroup remain small. All samples must
At ON Semiconductor, for critical parameters, the process come from the same source e.g., the same mold press
capability is acceptable with a Cpk = 1.33. The desired operator, etc.. Subgroup data should be collected at
process capability is a Cpk = 2 and the ideal is a Cpk = 5. appropriate time intervals to detect variations in the process.
Cpk, by definition, shows where the current production As the process begins to show improved stability, the
process fits with relationship to the specification limits. Off interval may be increased. The data collected must be
center distributions or excessive process variability will carefully documented and maintained for later correlation.
result in less than optimum conditions. Examples of common documentation entries would include
operator, machine, time, settings, product type, etc..

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 10
12
13
14
15
16
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
11
1
2
3
4
5
6
7
8
9
154
153
UCL = 152.8
152
151
X = 150.4
150
149
148 LCL = 148.0

147

UCL = 7.3
7
6
5
4
3 R = 3.2
2
1
LCL = 0
0

Figure 4. Example of Process Control Chart Showing Oven Temperature Data

Once the plan is established, data collection may begin. problems with piece to piece variability related to the
The data collected will generate X and R values that are process. The X chart can often identify changes in people,
plotted with respect to time. X refers to the mean of the machines, methods, etc. The source of the variability can be
values within a given subgroup, while R is the range or difficult to find and may require experimental design
greatest value minus least value. When approximately 20 or techniques to identify assignable causes.
more X and R values have been generated, the average of Some general rules have been established to help
these values is computed as follows: determine when a process is OUT-OF-CONTROL. Figure
X = (X + X2 + X3 + ...)/K 5a shows a control chart subdivided into zones A, B, and C
R = (R1 + R2 + R3 + ...)/K corresponding to 3 sigma, 2 sigma, and 1 sigma limits
respectively. In Figure 5b through Figure 5e four of the tests
where K = the number of subgroups measured.
that can be used to identify excessive variability and the
The values of X and R are used to create the process presence of assignable causes are shown. As familiarity with
control chart. Control charts are the primary SPC tool used a given process increases, more subtle tests may be
to signal a problem. Shown in Figure 4, process control employed successfully.
charts show X and R values with respect to time and Once the variability is identified, the cause of the
concerning reference to upper and lower control limit variability must be determined. Normally, only a few factors
values. Control limits are computed as follows: have a significant impact on the total variability of the
R upper control limit = UCLR = D4 R process. The importance of correctly identifying these
R lower control limit LCLR = D3 R factors is stressed in the following example. Suppose a
X upper control limit = UCLX = X + A2 R process variability depends on the variance of five factors A,
X lower control limit = LCLX = X – A B, C, D and E. Each has a variance of 5, 3, 2, 1 and 0.4
respectively.
Where D4, D3 and A2 are constants varying by sample Since:
size, with values for sample sizes from 2 to 10 shown in σ tot = σA2 + σB2 + σC2 + σD2 + σE2
the following partial table: σ tot = 52 + 32 + 22 + 12 + (0.4)2 = 6.3
Control charts are used to monitor the variability of
critical process parameters. The R chart shows basic

n 2 3 4 5 6 7 8 9 10
D4 3.27 2.57 2.28 2.11 2.00 1.92 1.86 1.82 1.78
D3 * * * * * 0.08 0.14 0.18 0.22
A2 1.88 1.02 0.73 0.58 0.48 0.42 0.37 0.34 0.31
* For sample sizes below 7, the LCLR would technically be a negative number; in those cases there is no lower control limit;
this means that for a subgroup size 6, six “identical” measurements would not be unreasonable.

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Now if only D is identified and eliminated then; be identified and eliminated in the most expeditious manner
s tot = 52 + 32 + 22 + (0.4)2 = 6.2 possible.
This results in less than 2% total variability improvement. After assignable causes have been eliminated, new
If B, C and D were eliminated, then; control limits are calculated to provide a more challenging
variability criteria for the process. As yields and variability
σ tot = 52 + (0.4)2 = 5.02
improve, it may become more difficult to detect
This gives a considerably better improvement of 23%. If
improvements because they become much smaller. When all
only A is identified and reduced from 5 to 2, then;
assignable causes have been eliminated and the points
σ tot = 22 + 32 + 22 + 12 + (0.4)2 = 4.3 remain within control limits for 25 groups, the process is
Identifying and improving the variability from 5 to 2 gives said to be in a state of control.
us a total variability improvement of nearly 40%.
Most techniques may be employed to identify the primary SUMMARY
assignable cause(s). Out-of-control conditions may be ON Semiconductor is committed to the use of
correlated to documented process changes. The product may STATISTICAL PROCESS CONTROLS. These principles,
be analyzed in detail using best versus worst part used throughout manufacturing, have already resulted in
comparisons or Product Analysis Lab equipment. many significant improvements to the processes. Continued
Multi-variance analysis can be used to determine the family dedication to the SPC culture will allow ON Semiconductor
of variation (positional, critical or temporal). Lastly, to reach the Six Sigma and zero defect capability goals. SPC
experiments may be run to test theoretical or factorial will further enhance the commitment to TOTAL
analysis. Whatever method is used, assignable causes must CUSTOMER SATISFACTION.

UCL UCL
A
ZONE A (+ 3 SIGMA)
B
ZONE B (+ 2 SIGMA)
C
ZONE C (+ 1 SIGMA) CENTERLINE
ZONE C (– 1 SIGMA) C

ZONE B (– 2 SIGMA) B

ZONE A (– 3 SIGMA) A LCL

LCL

Figure 5a. Control Chart Zones Figure 5b. One Point Outside Control Limit
Indicating Excessive Variability

UCL UCL
A A
B B
C C
C C
B B
A A LCL
LCL

Figure 5c. Two Out of Three Points in Zone A or Figure 5d. Four Out of Five Points in Zone B or
Beyond Indicating Excessive Variability Beyond Indicating Excessive Variability
UCL
A
B
C
C
B
A
LCL

Figure 5e. Seven Out of Eight Points in Zone C or

Beyond Indicating Excessive Variability

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 RELIABILITY STRESS TESTS HIGH TEMPERATURE STORAGE LIFE (HTSL)
The following gives brief descriptions of the reliability High temperature storage life testing is performed to
tests commonly used in the reliability monitoring program. accelerate failure mechanisms which are thermally
Not all of the tests listed are performed on each product. activated through the application of extreme temperatures.
Other tests may be performed when appropriate. In addition Typical Test Conditions: TA = 70°C to 200°C, no bias,
some form of preconditioning may be used in conjunction t = 24 to 2500 hours
with the following tests. Common Failure Modes: Parametric shifts in leakage
Common Failure Mechanisms: Bulk die and diffusion
AUTOCLAVE (aka, PRESSURE COOKER) defects
Autoclave is an environmental test which measures Military Reference: MIL-STD-750, Method 1032
device resistance to moisture penetration and the resultant
effects of galvanic corrosion. Autoclave is a highly INTERMITTENT OPERATING LIFE (IOL)
accelerated and destructive test. The purpose of this test is the same as SSOL in addition
Typical Test Conditions: TA = 121°C, rh = 100%, p = to checking the integrity of both wire and die bonds by
1 atmosphere (15 psig), t = 24 to 96 hours means of thermal stressing.
Common Failure Modes: Parametric shifts, high Typical Test Conditions: TA = 25°C, Pd = Data Book
leakage and/or catastrophic maximum rating, Ton = Toff = ∆ of 50°C to 100°C, t =
Common Failure Mechanisms: Die corrosion or 42 to 30000 cycles
contaminants such as foreign material on or within the Common Failure Modes: Parametric shifts and
package materials. Poor package sealing catastrophic
Common Failure Mechanisms: Foreign material, crack
HIGH HUMIDITY HIGH TEMPERATURE BIAS
and bulk die defects, metallization, wire and die bond
(H3TB or H3TRB)
defects
This is an environmental test designed to measure the
Military Reference: MIL-STD-750, Method 1037
moisture resistance of plastic encapsulated devices. A bias
is applied to create an electrolytic cell necessary to MECHANICAL SHOCK
accelerate corrosion of the die metallization. With time, this
is a catastrophically destructive test. This test is used to determine the ability of the device to
Typical Test Conditions: TA = 85°C to 95°C, rh = 85% withstand a sudden change in mechanical stress due to
abrupt changes in motion as seen in handling, transportation,
to 95%, Bias = 80% to 100% of Data Book max. rating,
or actual use.
t = 96 to 1750 hours
Typical Test Conditions: Acceleration = 1500 g’s,
Common Failure Modes: Parametric shifts, high
Orientation = X1, Y1, Y2 plane, t = 0.5 msec, Blows = 5
leakage and/or catastrophic
Common Failure Modes: Open, short, excessive
Common Failure Mechanisms: Die corrosion or
leakage, mechanical failure
contaminants such as foreign material on or within the
Common Failure Mechanisms: Die and wire bonds,
package materials. Poor package sealing
cracked die, package defects
Military Reference: MIL-STD-750, Method 1042
Military Reference: MIL-STD-750, Method 2015
HIGH TEMPERATURE REVERSE BIAS (HTRB)
MOISTURE RESISTANCE
The purpose of this test is to align mobile ions by means
The purpose of this test is to evaluate the moisture
of temperature and voltage stress to form a high-current
resistance of components under temperature/humidity
leakage path between two or more junctions.
conditions typical of tropical environments.
Typical Test Conditions: TA = 85°C to 150°C, Bias =
Typical Test Conditions: TA = –10°C to 65°C, rh = 80%
80% to 100% of Data Book max. rating, t = 120 to 1000
to 98%, t = 24 hours/cycle, cycle = 10
hours
Common Failure Modes: Parametric shifts in leakage
Common Failure Modes: Parametric shifts in leakage
and mechanical failure
Common Failure Mechanisms: Ionic contamination on
Common Failure Mechanisms: Corrosion or
the surface or under the metallization of the die
contaminants on or within the package materials. Poor
Military Reference: MIL-STD-750, Method 1039
package sealing
Military Reference: MIL-STD-750, Method 1021

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SOLDERABILITY and transitions between temperature extremes. This testing
The purpose of this test is to measure the ability of device will also expose excessive thermal mismatch between
leads/terminals to be soldered after an extended period of materials.
storage (shelf life). Typical Test Conditions: TA = –65°C to 200°C, cycle
Typical Test Conditions: Steam aging = 8 hours, Flux = 10 to 1000
= R, Solder = Sn60, Sn63 Common Failure Modes: Parametric shifts and
Common Failure Modes: Pin holes, dewetting, catastrophic
non-wetting Common Failure Mechanisms: Wire bond, cracked or
Common Failure Mechanisms: Poor plating, lifted die and package failure
contaminated leads Military Reference: MIL-STD-750, Method 1051
Military Reference: MIL-STD-750, Method 2026
THERMAL SHOCK (LIQUID TO LIQUID)
SOLDER HEAT The purpose of this test is to evaluate the ability of the
This test is used to measure the ability of a device to device to withstand both exposure to extreme temperatures
withstand the temperatures as may be seen in wave soldering and sudden transitions between temperature extremes. This
operations. Electrical testing is the endpoint criterion for this testing will also expose excessive thermal mismatch
stress. between materials.
Typical Test Conditions: Solder Temperature = 260°C, Typical Test Conditions: TA = 0°C to 100°C, cycles
t = 10 seconds = 10 to 1000
Common Failure Modes: Parameter shifts, mechanical Common Failure Modes: Parametric shifts and
failure catastrophic
Common Failure Mechanisms: Poor package design Common Failure Mechanisms: Wire bond, cracked or
Military Reference: MIL-STD-750, Method 2031 lifted die and package failure
Military Reference: MIL-STD-750, Method 1056
STEADY STATE OPERATING LIFE (SSOL)
The purpose of this test is to evaluate the bulk stability of VARIABLE FREQUENCY VIBRATION
the die and to generate defects resulting from manufacturing This test is used to examine the ability of the device to
aberrations that are manifested as time and stress-dependent withstand deterioration due to mechanical resonance.
failures. Typical Test Conditions: Peak acceleration = 20 g’s,
Typical Test Conditions: TA = 25°C, PD = Data Book Frequency range = 20 Hz to 20 kHz, t = 48 minutes.
maximum rating, t = 16 to 1000 hours Common Failure Modes: Open, short, excessive
Common Failure Modes: Parametric shifts and leakage, mechanical failure
catastrophic Common Failure Mechanisms: Die and wire bonds,
Common Failure Mechanisms: Foreign material, crack cracked die, package defects
die, bulk die, metallization, wire and die bond defects Military Reference: MIL-STD-750, Method 2056
Military Reference: MIL-STD-750, Method 1026

TEMPERATURE CYCLING (AIR TO AIR)

The purpose of this test is to evaluate the ability of the
device to withstand both exposure to extreme temperatures

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 ZENER DIODE CHARACTERISTICS

INTRODUCTION

FORWARD CURRENT
At first glance the zener diode is a simple device
consisting of one P-N junction with controlled breakdown
voltage properties. However, when considerations are given FORWARD CHARACTERISTIC
to the variations of temperature coefficient, zener
impedance, thermal time response, and capacitance, all of REVERSE VOLTAGE
which are a function of the breakdown voltage (from 1.8 to
400 V), a much more complicated picture arises. In addition LEAKAGE REGION FORWARD VOLTAGE

REVERSE CURRENT
to the voltage spectrum, a variety of power packages are on
the market with a variation of dice area inside the
BREAKDOWN
encapsulation. REGION
This chapter is devoted to sorting out the important
considerations in a “typical” fashion. For exact details, the
data sheets must be consulted. However, much of the
information contained herein is supplemental to the data
Figure 1. Typical Zener Diode DC V-I Characteristics
sheet curves and will broaden your understanding of zener
(Not to Scale)
diode behavior.
Specifically, the following main subjects will be detailed: While the common form of the diode equation suggests
Basic DC Volt-Ampere Characteristics that IR is constant, in fact IR is itself strongly temperature
Impedance versus Voltage and Current dependent. The rapid increase in IR with increasing
Temperature Coefficient versus Voltage and Current temperature dominates the decrease contributed by the
Power Derating exponential term in the diode equation. As a result, the
Mounting forward current increases with increasing temperature.
Thermal Time Response – Effective Thermal Impedance Figure 2 shows a forward characteristic temperature
dependence for a typical zener. These curves indicate that
Surge Capabilities
for a constant current, an increase in temperature causes a
Frequency Response – Capacitance and Switching decrease in forward voltage. The voltage temperature
Effects coefficient values are typically in the range of –1.4 to
–2 mV/°C.
BASIC ZENER DIODE DC VOLT-AMPERE
CHARACTERISTICS 1000
500
Reverse and forward volt-ampere curves are represented
I F , FORWARD CURRENT (mA)

in Figure 1 for a typical zener diode. The three areas – 200

forward, leakage, and breakdown – will each be examined. 100
50
FORWARD DC CHARACTERISTICS
20
The forward characteristics of a zener diode are TJ = 150°C 100°C 25°C -55°C
10
essentially identical with an “ordinary” rectifier and is
5
shown in Figure 2. The volt-ampere curve follows the basic
diode equation of IF = IReqV/KT where KT/q equals about 2
0.026 volts at room temperature and IR (reverse leakage 1
current) is dependent upon the doping levels of the P-N 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
junction as well as the area. The actual plot of VF versus IF VF, FORWARD VOLTAGE (VOLTS)
deviates from the theoretical due to slightly “fixed” series
Figure 2. Typical Forward Characteristics of
resistance of the lead wire, bonding contacts and some bulk Zener Diodes
effects in the silicon.

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 LEAKAGE DC CHARACTERISTICS 1000
500
When reverse voltage less than the breakdown is applied T = TJ
200
T = TA

I Z , ZENER CURRENT (mA)

to a zener diode, the behavior of current is similar to any 100
back-biased silicon P-N junction. Ideally, the reverse current 50
would reach a level at about one volt reverse voltage and 20
remain constant until breakdown is reached. There are both 10
theoretical and practical reasons why the typical V-I curve 5
will have a definite slope to it as seen in Figure 3. 2
Multiplication effects and charge generation sites are 1
present in a zener diode which dictate that reverse current 0.5
(even at low voltages) will increase with voltage. In 0.2 T = -
55°C 25°C 100°C 150°C
addition, surface charges are ever present across P-N 0.1
25 26 27 28 29 30 31 32
junctions which appear to be resistive in nature.
VZ, ZENER VOLTAGE (VOLTS)
The leakage currents are generally less than one
microampere at 150°C except with some large area devices. Figure 4. Typical Zener Characteristic
Quite often a leakage specification at 80% or so of Variation with Temperature
breakdown voltage is used to assure low reverse currents.
An exaggerated view of the knee region is shown in
10000
Figure 5. As can be seen, the breakdown or avalanche
current does not increase suddenly, but consists of a series
IR , REVERSE LEAKAGE CURRENT (nA)

of smoothly rising current versus voltage increments each

1000
with a sudden break point.
TJ = 150°C
100

CURRENT
10
ZENER CURRENT

25°C
1 VOLTAGE

-55°C
0.1 EXAGGERATED VI
0 4 6 12 16 20
OF KNEE REGION
VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Leakage Current

versus Voltage ZENER VOLTAGE

Figure 5. Exaggerated V-I Characteristics

VOLTAGE BREAKDOWN of the Knee Region
At some definite reverse voltage, depending on the doping At the lowest point, the zener resistance (slope of the
levels (resistivity) of the P-N junction, the current will begin curve) would test high, but as current continues to climb, the
to avalanche. This is the so-called “zener” or “breakdown” resistance decreases. It is as though each discharge site has
area and is where the device is usually biased during use. A high resistance with each succeeding site being in parallel
typical family of breakdown curves showing the effect of until the total resistance is very small.
temperature is illustrated in Figure 4. In addition to the resistive effects, the micro plasmas may
Between the minimum currents shown in Figure 4 and the act as noise generators. The exact process of manufacturing
leakage currents, there is the “knee” region. The avalanche affects how high the noise will be, but in any event there will
mechanism may not occur simultaneously across the entire be some noise at the knee, and it will diminish considerably
area of the P-N junction, but first at one microscopic site, as current is allowed to increase.
then at an increasing number of sites as further voltage is Since the zener impedance and the temperature
applied. This action can be accounted for by the coefficient are of prime importance when using the zener
“microplasma discharge” theory and correlates with several diode as a reference device, the next two sections will
breakdown characteristics. expand on these points.

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 ZENER IMPEDANCE 100

The slope of the VZ – IZ curve (in breakdown) is defined

as zener impedance or resistance. The measurement is 10

ZENER CURRENT (mA)

generally done with a 60 Hz (on modern, computerized
equipment this test is being done at 1 kHz) current variation
whose value is 10% in rms of the dc value of the current. 1
(That is, ∆IZ peak to peak = 0.282 IZ.) This is really not a
small signal measurement but is convenient to use and gives
repeatable results. 0.1
The zener impedance always decreases as current
increases, although at very high currents (usually beyond IZ
max) the impedance will approach a constant. In contrast, 0.01
1 2 3 4 5 6 7 8
the zener impedance decreases very rapidly with increasing
ZENER VOLTAGE (VOLTS)
current in the knee region. On Semiconductor specifies most
zener diode impedances at two points: IZT and IZK. The term Figure 7. Zener Current versus Zener Voltage
IZT usually is at the quarter power point, and IZK is an (Low Voltage Region)
arbitrary low value in the knee region. Between these two Possibly the plots shown in Figure 8 of zener impedance
points a plot of impedance versus current on a log-log scale versus voltage at several constant IZ’s more clearly points
is close to a straight line. Figure 6 shows a typical plot of ZZ out this effect. It is obvious that zener diodes whose
versus IZ for a 20 volt–500 mW zener. The worst case breakdowns are about 7 volts will have remarkably low
impedance between IZT and IZK could be approximated by impedance.
assuming a straight line function on a log-log plot; however,
at currents above IZT or below IZK a projection of this line 200
Z Z , DYNAMIC IMPEDANCE (OHMS)

may give erroneous values. 100 TA = 25°C

1000 70 IZ(ac) = 0.1 IZ(dc)
1 mA
50
ZZK(MAX) APPROXIMATE MAXIMUM LINE 30
ZENER IMPEDANCE (OHMS)

20 10 mA
100
ZZT(MAX) 10
7 20 mA
5
10 3
2
2 3 5 7 10 20 30 50 70 100 200
VZ, ZENER VOLTAGE (VOLTS)
1
0.1 1 10 100 Figure 8. Dynamic Zener Impedance (Typical)
versus Zener Voltage
ZENER CURRENT (mA)
However, this is not the whole picture. A zener diode
Figure 6. Zener Impedance versus
Zener Current
figure of merit as a regulator could be ZZ/VZ. This would
give some idea of what percentage change of voltage could
The impedance variation with voltage is much more be expected for some given change in current. Of course, a
complex. First of all, zeners below 6 volts or so exhibit “field low ZZ/VZ is desirable. Generally zener current must be
emission” breakdown converting to “avalanche” at higher decreased as voltage is increased to prevent excessive power
currents. The two breakdowns behave somewhat differently dissipation; hence zener impedance will rise even higher and
with “field emission” associated with high impedance and the “figure of merit” will become higher as voltage
negative temperature coefficients and “avalanche” with increases. This is the case with IZT taken as the test point.
lower impedance and positive temperature coefficients. However, if IZK is used as a comparison level in those
A V-I plot of several low voltage 500 mW zener diodes is devices which keep a constant IZK over a large range of
shown in Figure 7. It is seen that at some given current voltage, the “figure of merit” will exhibit a bowl-shaped
(higher for the lower voltage types) there is a fairly sudden curve – first decreasing and then increasing as voltage is
decrease in the slope of ∆V/∆I. Apparently, this current is the increased. Typical plots are shown in Figure 9. The
transition from one type of breakdown to the other. Above conclusion can be reached that for uses where wide swings
6 volts the curves would show a gradual decrease of ∆V/∆I of current may occur and the quiescent bias current must be
rather than an abrupt change, as current is increased. high, the lower voltage zener will provide best regulation,

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 but for low power applications, the best performance could 9.3 volts at 75°C for all useful current levels (disregarding
be obtained between 50 and 100 volts. impedance effects).
100
As was mentioned, the situation is further complicated by
ZENER IMPEDANCE (MAX)/ZENER VOLTAGE

400 mW, ZZK(MAX) AT 0.25 mA the normal deviation of TC at a given current. For example,
for 7.5 mA the normal spread of TC (expressed in %/°C) is
0.85 mA shown in Figure 11. This is based on limited samples and in
10 W, ZZK(MAX) AT 1 mA 1.3 mA
10 no manner implies that all On Semiconductor zeners
12.5 mA between 2 and 12 volts will exhibit this behavior. At other
3.8 mA SEE NOTE BELOW current levels similar deviations would occur.
1.7 mA +0.08 MAX
1
TYPICAL

TEMPERATURE COEFFICIENT (%/C)

400 mW, ZZT(MAX) +0.06
MIN

°
250 mA 75 mA +0.04
17 mA
10 W, ZZT(MAX) 28 mA +0.02
0.1
10 30 50 70 90 110 130 150 0 IZT = 7.5 mA
ZENER VOLTAGE (VOLTS) -0.02
(NOTE: CURVE IS APPROXIMATE, ACTUAL
-0.04
ZZ(MAX) IS ROUNDED OFF TO NEAREST
WHOLE NUMBER ON A DATA SHEET) -0.06 MIN
-0.08 TYPICAL
Figure 9. Figure of Merit: ZZ(Max)/VZ versus VZ
MAX
(400 mW & 10 W Zeners) -0.10
0 2 4 6 8 10 12 14
ZENER VOLTAGE (VOLTS)
TEMPERATURE COEFFICIENT
Figure 11. Temperature Coefficient Spread
Below three volts and above eight volts the zener voltage versus Zener Voltage
change due to temperature is nearly a straight line function
and is almost independent of current (disregarding Obviously, all of these factors make it very difficult to
self-heating effects). However, between three and eight attempt any calculation of precise voltage shift due to
volts the temperature coefficients are not a simple affair. A temperature. Except in devices with specified maximum
typical plot of TC versus VZ is shown in Figure 10. T.C., no “worse case” design is possible. Information
concerning the On Semiconductor temperature
7
TC , TEMPERATURE COEFFICIENTS (mV/C)

compensated or reference diodes is given in Chapter 4.

°

6
VZ REFERENCE AT IZ = IZT
Typical temperature characteristics for a broad range of
5 voltages is illustrated in Figure 12. This graphically shows
& TA = 25°C
4 the significant change in voltage for high voltage devices
3 (about a 20 volt increase for a 100°C increase on a 200 volt
2 device).
1 100
10 mA 0.01 mA
0
30 mA 0.1 mA
-1
10
∆ V Z (+25 °C TO +125 °C)

1 mA
-2
-3
2 3 4 5 6 7 8 9 10 11 12
1
VZ, ZENER VOLTAGE (VOLTS)

Figure 10. Temperature Coefficient versus

Zener Voltage at 25°C Conditions Typical 0.1 NOTE: DV IS + ABOVE 5 VOLTS
- BELOW 4.3 VOLTS
Any attempt to predict voltage changes as temperature BETWEEN 4.3 & 5 VOLTS
VARIES ABOUT + 0.08 VOLTS
changes would be very difficult on a “typical” basis. (This, 0.01
of course, is true to a lesser degree below three volts and 1 2 3 5 10 50 100 200 1,000
above eight volts since the curve shown is a typical one and ZENER VOLTAGE (VOLTS)
slight deviations will exist with a particular zener diode.) For Figure 12. Typical Temperature
example, a zener which is 5 volts at 25°C could be from 4.9 Characteristics
to 5.05 volts at 75°C depending on the current level.
Whereas, a zener which is 9 volts at 25°C would be close to

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 POWER DERATING AND MOUNTING 1.25

PD , MAXIMUM POWER DISSIPATION (WATTS)

L = LEAD LENGTH
The zener diode like any other semiconductor has a L = 1″ TO HEAT SINK
maximum junction temperature. This limit is somewhat 1
L = 1/8″
arbitrary and is set from a reliability viewpoint. Most
L = 3/8″
semiconductors exhibit an increasing failure rate as 0.75
temperature increases. At some temperature, the solder will
melt or soften and the failure rate soars. The 175°C to 200°C 0.50
junction temperature rating is quite safe from solder failures
and still has a very low failure rate.
0.25
In order that power dissipated in the device will never cause
the junction to rise beyond 175°C or 200°C (depending on the
device), the relation between temperature rise and power 0 20 40 60 80 100 120 140 160 180 200
must be known. Of course, the thermal resistance (RθJA or TL, LEAD TEMPERATURE (°C)
RθJL) is the factor which relates power and temperature in the
well known “Thermal Ohm’s Law’’ relation: Figure 14. Power Temperature
∆T = TJ – TA = RθJAPZ Derating Curve
(1)
and
∆T = TJ – TL = RθJLPZ (2) A lead mounted device can have its power rating
where increased by shortening the lead length and “heatsinking”
TJ = Junction temperature the ends of the leads. This effect is shown in Figure 15, for
TA = Ambient temperature the 1N4728, 1 watt zener diode.
TL = Lead temperature Each zener has a derating curve on its data sheet and
RθJA = Thermal resistance junction to ambient steady state power can be set properly. However,
RθJL = Thermal resistance junction to lead temperature increases due to pulse use are not so easily
PZ = Zener power dissipation calculated. The use of “Transient Thermal Resistance”
Obviously, if ambient or lead temperature is known and would be required. The next section expounds upon
the appropriate thermal resistance for a given device is transient thermal behavior as a function of time and surge
known, the junction temperature could be precisely power.
calculated by simply measuring the zener dc current and 175
voltage (PZ = IZVZ). This would be helpful to calculate
voltage change versus temperature. However, only 150
THERMAL RESISTANCE (°C/W)
RJL, JUNCTION-TO-LEAD

maximum and typical values of thermal resistance are given

125
for a family of zener diodes. So only “worst case” or typical
information could be obtained as to voltage changes. 100
The relations of equations 1 and 2 are usually expressed
as a graphical derating of power versus the appropriate 75
temperature. Maximum thermal resistance is used to
50
generate the slope of the curve. An example of a 400
milliwatt device derated to the ambient temperature and a 1 25
watt device derated to the lead temperature are shown in
0
Figures 13 and 14. 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
500 L, LEAD LENGTH TO HEAT SINK (INCH)
PD , POWER DISSIPATION (MILLIWATTS)

Figure 15. Typical 1N4728 Thermal

400 Resistance versus Lead Length

300 THERMAL TIME RESPONSE

Early studies of zener diodes indicated that a “thermal
200 time constant” existed which allowed calculation of
temperature rise as a function of power pulse height, width,
100 and duty cycle. More precise measurements have shown that
temperature response as a function of time cannot be
0 represented as a simple time constant. Although as shown in
25 50 75 100 125 150 175 200 the preceding section, the steady state conditions are
TA, AMBIENT TEMPERATURE (°C)
analogous in every way to an electrical resistance; a simple
Figure 13. 400 mW Power Temperature “thermal capacitance” placed across the resistor is not the
Derating Curve true equivalent circuit. Probably a series of parallel R-C

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 networks or lumped constants representing a thermal PEAK
TEMPERATURE RISE
transmission line would be more accurate.
Fortunately a concept has developed in the industry AVERAGE
wherein the exact thermal equivalent circuit need not be TEMPERATURE RISE
found. If one simply accepts the concept of a thermal
AMBIENT
resistance which varies with time in a predictable manner, TEMPERATURE
the situation becomes very practical. For each family of PEAK POWER (PP)
zener diodes, a “worst case” transient thermal resistance
curve may be generated. T
The main use of this transient RθJL curve is when the zener T1 T1
AVERAGE POWER = T PP
is used as a clipper or a protective device. First of all, the
power wave shape must be constructed. (Note, even though
the power-transient thermal resistance indicates reasonable
junction temperatures, the device still may fail if the peak Figure 17. Relation of Junction Temperature to
current exceeds certain values. Apparently a current Power Pulses
crowding effect occurs which causes the zener to short. This This method will predict the temperature rise at the end of
is discussed further in this section.) the power pulse after the chain of pulses has reached
equilibrium. In other words, the average power will have
TRANSIENT POWER-TEMPERATURE EFFECTS
caused an average temperature rise which has stabilized, but
A typical transient thermal resistance curve is shown in a temperature “ripple” is present.
Figure 16. This is for a lead mounted device and shows the
Example: (Use curve in Figure 16)
effect of lead length to an essentially infinite heatsink.
PP = 5 watt (Lead length 1/32″)
To calculate the temperature rise, the power surge wave D = 0.1
shape must be approximated by its rectangular equivalent as T1 = 10 ms
shown in Figure 17. In case of an essentially non-recurrent T = 100 ms
pulse, there would be just one pulse, and ∆T = RθT1 Pp. In RθJA(ss) = 12°C/W (for 1/32″ lead length)
the general case, it can be shown that Then
RθT1 = 1.8°C/W
∆T = [DRθJA (ss) + (1 – D) RθT1 + T + RθT1 – RθT] PP RθT = 5.8°C/W
where RθT1 + T = 6°C/W
D = Duty cycle in percent And
RθT1 = Transient thermal resistance at the time ∆T = [0.1 x 12 + (1 – 0.1) 6 + 1.8 – 5.8] 5
equal to the pulse width ∆T = 13°C
RθT = Transient thermal resistance at the time Or at TA = 25°, TJ = 38°C peak
equal to pulse interval
RθT1 + T = Transient thermal resistance at the time SURGE FAILURES
equal to the pulse interval
= plus one more pulse width. If no other considerations were present, it would be a
RθJA(ss) or RθJL(ss) = Steady state value of thermal simple matter to specify a maximum junction temperature
RθJA(ss) or RθJL(ss) = resistance no matter what pulses are present. However, as has been
noted, apparently other fault conditions prevail. The same
100 group of devices for which the transient thermal curves were
RθJL(t), JUNCTIONTOLEAD TRANSIENT

ÉÉ ÉÉ
70 L L generated were tested by subjecting them to single shot
50

ÉÉ ÉÉ
THERMAL RESISTANCE (°C/W)

power pulses. A failure was defined as a significant shift of

L = 1″
30 HEAT SINK leakage or zener voltage, or of course opens or shorts. Each
20 device was measured before and after the applied pulse.
L = 1/32″
Most failures were shifts in zener voltage. The results are
10 shown in Figure 18.
7 Attempts to correlate this to the transient thermal
5
FOR θJL(t) VALUES AT PULSE WIDTHS resistance work quite well on a typical basis. For example,
3 LESS THAN 3.0 ms, THE ABOVE
CURVE CAN BE EXTRAPOLATED
assuming a value for 1 ms of 90 watts and 35 watts at 10 ms,
2 DOWN TO 10 µs AT A CONTINUING the predicted temperature rise would be 180°C and 190°C.
SLOPE OF 1/2 But on a worst case basis, the temperature rises would be
1
3 5 10 20 50 100 200 500 1000 2000 5000 10k 30k about one half these values or junction temperatures, on the
PW, PULSE WIDTH (ms) order of 85°C to 105°C, which are obviously low.
Figure 16. Typical Transient Thermal Apparently at very high power levels a current restriction
Resistance (For Axial Lead Zener) occurs causing hot spots. There was no apparent correlation

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 of zener voltage or current on the failure points since each FREQUENCY AND PULSE CHARACTERISTICS
group of failures contained a mixture of voltages. The zener diode may be used in applications which
1000 require a knowledge of the frequency response of the device.
Of main concern are the zener resistance (usually specified
as “impedance”) and the junction capacitance. The
capacitance curves shown in this section are typical.
100 TYPICAL
POWER (WATTS)

ZENER CAPACITANCE
Since zener diodes are basically PN junctions operated in
WORSE CASE
10 the reverse direction, they display a capacitance that
decreases with increasing reverse voltage. This is so because
the effective width of the PN junction is increased by the
removal of charges (holes and electrons) as reverse voltage
1 is increased. This decrease in capacitance continues until the
0.00001 0.0001 0.001 0.01 0.1 1
zener breakdown region is entered; very little further
TIME OF PULSE (SECONDS)
capacitance change takes place, owing to the now fixed
Figure 18. One Shot Power Failure Axial voltage across the junction. The value of this capacitance is
Lead Zener Diode a function of the material resistivity, ρ, (amount of doping –
which determines VZ nominal), the diameter, D, of junction
or dice size (determines amount of power dissipation), the
VOLTAGE VERSUS TIME
voltage across the junction VC, and some constant, K. This
Quite often the junction temperature is only of academic relationship can be expressed as:


interest, and the designer is more concerned with the voltage
behavior versus time. By using the transient thermal n KD4
KD4
CC = pρV
VCC
resistance, the power, and the temperature coefficient, the
designer could generate VZ versus time curves. The
After the junction enters the zener region, capacitance
On Semiconductor zener diode test group has observed
remains relatively fixed and the AC resistance then
device voltages versus time until the thermal equilibrium
decreases with increasing zener current.
was reached. A typical curve is shown for a lead mounted
TEST CIRCUIT CONSIDERATIONS: A capacitive
low wattage device in Figure 19 where the ambient
bridge was used to measure junction capacitance. In this
temperature was maintained constant. It is seen that voltage
method the zener is used as one leg of a bridge that is
stabilizes in about 100 seconds for 1 inch leads.
balanced for both DC at a given reverse voltage and for AC
Since information contained in this section may not be
(the test frequency 1 MHz). After balancing, the variable
found on data sheets it is necessary for the designer to
capacitor used for balancing is removed and its value
contact the factory when using a zener diode as a surge
measured on a test instrument. The value thus indicated is
suppressor. Additional information on transient suppression
the zener capacitance at reverse voltage for which bridge
application is presented elsewhere in this book.
balance was obtained. Figure 20 shows capacitance test
166
circuit.
Figure 21 is a plot of junction capacitance for diffused
165
zener diode units versus their nominal operating voltage.
ZENER VOLTAGE (VOLTS)

Capacitance is the value obtained with reverse bias set at

164 one-half the nominal VZ. The plot of the voltage range from
6.8 V to 200 V, for three dice sizes, covers most
163 On Semiconductor diffused-junction zeners. Consult
specific data sheets for capacitance values.
162 Figures 22, 23, and 24 show plots of capacitance versus
reverse voltage for units of various voltage ratings in each
161 of the three dice sizes. Junction capacitance decreases as
reverse voltage increases to the zener region. This change in
160 capacitance can be expressed as a ratio which follows a
0.01 0.1 1 10 100
one-third law, and C1/C2 = (V2/V1)1/3. This law holds only
TIME (SECONDS)
from the zener voltage down to about 1 volt, where the curve
Figure 19. Zener Voltage (Typical) versus begins to flatten out. Figure 25 shows this for a group of low
Time for Step Power Pulses wattage units.
(500 mW Lead Mounted Devices)

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 0.1 µF IV 1 MHz

DC SIGNAL
POWER 1k GEN
VDC 1k 100 W VAC
SUPPLY 1% TEK
1% 1k 1k
HP NO. 190A
1% 1%
NO. 712A

HIGAIN
C1 DIFF SCOPE BAL READ
NULL IND
10/50 TEK S1
pF TYPE D
CAP
DECADE L/C
0-.09 mF METER
ZENER R = ZR R 100 pF TEK
X UNDER C2
STEPS 140
TEST 10/150
∆C 1% pF

Figure 20. Capacitance Test Circuit

10,000 1,000
LOW WATTAGE UNITS
C Z , CAPACITANCE (PICOFARADS) @ VZ/ 2

AVG. FOR 10 UNITS EACH

C Z , CAPACITANCE (PICOFARADS)

HIGH WATTAGE 10 VOLTS

MEDIUM WATTAGE
1,000
20 VOLTS

100

100 50 VOLTS

100 VOLTS
LOW WATTAGE

10 10
1 10 100 1,000 1 10 100
VZ, NOMINAL UNIT VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 21. Capacitance versus Voltage Figure 22. Capacitance versus Reverse Voltage

10,000 10,000
MEDIUM WATTAGE UNITS HIGH WATTAGE UNITS
AVG. FOR 10 UNITS EACH 10 VOLTS AVG. FOR 10 UNITS EACH
C Z , CAPACITANCE (PICOFARADS)
C Z , CAPACITANCE (PICOFARADS)

10 VOLTS
1,000
20 VOLTS 20 VOLTS

50 VOLTS 1,000
50 VOLTS
100 VOLTS
100
100 VOLTS

10 100
1 10 100 1,000 1 10 100
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 23. Capacitance versus Figure 24. Capacitance versus

Reverse Voltage Reverse Voltage

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 1,000
LOW WATTAGE
UNITS

C Z, CAPACITANCE (PICOFARADS)
10 VOLTS

100 50 VOLTS

100 VOLTS

10
0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS)

Figure 25. Flattening of Capacitance Curve at

Low Voltages
mA
DC DC
0.1 µF SIGNAL
SUPPLY 1k 1k
GEN
HP HP
712A 650A

600
READ S1 A

E1 - E2 10M
Rx =
E2

SET
E1
READ
100 pF AC
RX = ZZ
VTVM
HP
E2 400H
SET S1 B
R2
1Ω

DC
VTVM
HP
412A

Figure 26. Impedance Test Circuit

ZENER IMPEDANCE (3) Measure the voltage across the entire network by
Zener impedance appears primarily as composed of a switching S1. The ratio of these two AC voltages is
current-dependent resistance shunted by a then a measure of the impedance ratio. This can be
voltage-dependent capacitor. Figure 26 shows the test expressed simply as RX = [(E1 – E2)/E2] R2.
circuit used to gather impedance data. This is a
Section A of S1 provides a dummy load consisting of a
voltage-impedance ratio method of determining the
10-M resistor and a 100 pF capacitor. This network is
unknown zener impedance. The operation is as follows:
required to simulate the input impedance of the AC VTVM
(1) Adjust for desired zener IZDC by observing IR drop while it is being used to measure the AC IR drop across R2.
across the 1-ohm current-viewing resistor R2. This method has been found accurate up to about three
megahertz; above this frequency, lead inductances and strap
(2) Adjust IZAC to 100 µA by observing AC IR drop across capacitance become the dominant factors.
R2.

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 Figure 27 shows typical impedance versus frequency HIGH FREQUENCY AND SWITCHING
relationships of 6.8 volt 500 mW zener diodes at various DC CONSIDERATIONS
zener currents. Before the zener breakdown region is At frequencies about 100 kHz or so and switching speeds
entered, the impedance is almost all reactive, being provided above 10 microseconds, shunt capacitance of zener diodes
by a voltage-dependent capacitor shunted by a very high begins to seriously effect their usefulness. The upper photo
resistance. When the zener breakdown region is entered, the of Figure 28 shows the output waveform of a symmetrical
capacitance is fixed and now is shunted by peak limiter using two zener diodes back-to-back. The
current-dependent resistance. For comparison, Figure 27 capacitive effects are obvious here. In any application where
also shows the plot for a 680 pF capacitor XC, a 1K 1% the signal is recurrent, the shunt capacitance limitations can
nonreactive resistor, R, and the parallel combination of these be overcome, as lower photo of Figure 28 shows. This is
two passive elements, ZT. done by operating fast diodes in series with the zener. Upon
10,000 application of a signal, the fast diode conducts in the forward
XC , 680 pF
IZMA direction charging the shunt zener capacitance to the level
ZT
Z Z , ZENER IMPEDANCE (OHMS)

0.25 R, 1K 1% DC where the zener conducts and limits the peak. When the
1,000
0.50
signal swings the opposite direction, the fast diode becomes
1K & 680 pF back-biased and prevents fast discharge of shunt
1.00 capacitance. The fast diode remains back-biased when the
100
2 signal reverses again to the forward direction and remains
off until the input signal rises and exceeds the charge level
10 2.50 of the capacitor. When the signal exceeds this level, the fast
5
diode conducts as does the zener. Thus, between successive
10 cycles or pulses the charge in the shunt capacitor holds off
1 20 the fast diode, preventing capacitive loading of the signal
10 100 1 kHz 10 kHz 100 kHz 1 MHz 10 MHz until zener breakdown is reached. Figures 29 and 30 show
FREQUENCY (Hz) this method applied to fast-pulse peak limiting.
Figure 27. Zener Impedance
versus Frequency

RS

ei eo

5 V/cm

0.5 µs/cm
RS

ei eo
5 V/cm

0.5 µs/cm

Figure 28. Symmetrical Peak Limiter

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2 V/cm
200 Ω
eo

10 V
ei 50 Ω eo
Z

ei

20 ns/cm

Figure 29. Shunt Clipper

2 V/cm
200 Ω

ei eo
eo 50 Ω

ei 0.001

20 ns/cm

Figure 30. Shunt Clipper with Clamping Network

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 Figure 31 is a photo of input-output pulse waveforms edge. Figure 32 clearly points out the advantage of the
using a zener alone as a series peak clipper. The smaller clamping network.
output waveform shows the capacitive spike on the leading

2 V/cm
eo
10 VZ

ei 50 Ω 200 Ω eo

ei

20 ns/cm

Figure 31. Basic Series Clipper

.001
eo
2 V/cm

10 VZ

ei ei 50 Ω 200 Ω eo

20 ns/cm

Figure 32. Series Clipper with Clamping Network

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 TEMPERATURE COMPENSATED ZENERS

INTRODUCTION TEMPERATURE CHARACTERISTICS OF THE P-N

A device which provides reference voltages in a special JUNCTION AND COMPENSATION
manner is a reference diode. The voltage of a forward biased P-N junction, at a specific
As was discussed in the preceding chapters, the zener current, will decrease with increasing temperature. Thus, a
diode has the unique characteristic of exhibiting either a device so biased displays a negative temperature coefficient
positive or a negative temperature coefficient, or both. By (Figure 1). A P-N junction in avalanche (above 5 volts
properly employing this phenomenon in conjunction with breakdown) will display a positive temperature coefficient;
other semiconductor devices, it is possible to manufacture a that is, voltage will increase as temperature increases. Due
zener reference element exhibiting a very low temperature to energy levels of a junction which breaks down below
coefficient when properly used. This type of low 5 volts, the temperature coefficient is negative.
temperature coefficient device is referred to as a reference It follows that various combinations of forward biased
diode. junctions and reverse biased junctions may be arranged to
achieve temperature compensation. From Figure 2 it can be
INTRODUCTION TO REFERENCE DIODES seen that if the absolute value of voltage change (∆V) is the
The temperature characteristics of the zener diode are same for both the forward biased diode and the zener diode
discussed in a previous chapter, where it was shown that where the temperature has gone from 25°C to 100°C, then
change in zener voltage with temperature can be significant the total voltage across the combination will be the same at
under severe ambient temperature changes (for example, a both temperatures since one ∆V is negative and the other
100 V zener can change 12.5 volts from 0 to 125°C). The positive. Furthermore, if the rate of increase (or decrease) is
reference diode (often called the temperature compensated the same throughout the temperature change, voltage will
zener or the TC zener) is specially designed to minimize remain constant. The non-linearity associated with the
these specific temperature effects. voltage temperature characteristics is a result of this rate of
Design of temperature compensated zeners make possible change not being a perfect match.
devices with voltage changes as low as 5 mV from –55 to VREF = VZ + ∆VZ + VD – ∆VD
+100°C, consequently, the advantages of the temperature
compensated zener are obvious. In critical applications, as THE METHODS OF TEMPERATURE
a voltage reference in precision dc power supplies, in high COMPENSATION
stability oscillators, in digital voltmeters, in frequency
The effect of temperature is shown in Figure 1. The
meters, in analog-to-digital converters, or in other precision
forward characteristic does not vary significantly with
equipment, the temperature compensated zener is a
reverse voltage breakdown (zener voltage) rating. A change
necessity.
in ambient temperature from 25° to 100°C produces a shift
Conceivably temperature compensated devices can be
in the forward curve in the direction of lower voltage (a
designed for any voltage but present devices with optimum
negative temperature coefficient — in this case about
voltage temperature characteristics are limited to specific
150 mV change), while the same temperature change
voltages. Each family of temperature compensated zeners is
produces approximately 1.9 V increase in the zener voltage
designed by careful selection of its integral parts with special
(a positive coefficient). By combining one or more silicon
attention to the use conditions (temperature range and
diodes biased in the forward direction with the P-N biased
current). A distinct operating current is associated with each
zener diode as shown in Figure 3, it is possible to
device. Consequently, changes from the specified operating
compensate almost completely for the zener temperature
current can only degrade the voltage-temperature
coefficient. Obviously, with the example shown, 13
relationships. This will be discussed in more detail later.
junctions would be needed. Usually reference diodes are low
The device “drift” or voltage-time stability is critical in
voltage devices, using zeners with 6 to 8 volts breakdown
some reference applications. Typically zeners and TC
and one or two forward diodes.
zeners offer stability of better than 500 parts per million per
1000 hours.

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 450

150 mV

300

IF (mA)
FORWARD
CHARACTERISTIC
100°C 25°C
TYPICAL
(ALL TYPES)
150

VZ (VOLTS)
30 20 10
0.5 1 1.5
VF (VOLTS)

15
1.9 V

IZ (mA)
100°C
30
25°C

45

Figure 1. Effects of Temperature on Zener Diode Characteristics

DIRECTION OF CURRENT FLOW

FORWARDBIASED PACKAGE REVERSEBIASED

PN JUNCTION 25°C OUTLINE ZENER JUNCTION
+ 100°C 25°C
-∆V
-

-V
100°C
7.5 mA 25°C
7.5 mA
-

+V
100°C -
+∆V +∆V
100°C 25°C

Figure 2. Principle of Temperature Compensation

SILICON JUNCTION
DIODES

ZENER DIODES

-
Figure 3. Zener Temperature Compensation with Silicon Forward Junctions

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 In ac regulator and clipper circuits where zener diodes are TEMPERATURE COEFFICIENT STABILITY
normally connected cathode to cathode, the forward biased Figure 5 shows the voltage-temperature characteristics of
diode during each half cycle can be chosen with the correct the TC diode. It can be seen that the voltage drops slightly
forward temperature coefficient (by stacking, etc.) to with increasing temperature.
correctly compensate for the temperature coefficient of the
reverse-biased zener diode. It is possible to compensate for 6.326 6
voltage drift with temperature using this method to the 5
extent that zener voltage stabilities on the order of 6.324 4

mV CHANGE FROM 25°C VOLTAGE

0.001%/°C are quite feasible. 3

VOLTAGE (VOLTS)
This technique is sometimes employed where higher 6.322 2
wattage devices are required or where the zener is 1
compensated by the emitter base junction of a transistor 6.320 0
-1
stage. Consider the example of using discrete components,
6.318 -2
1N4001 rectifier and ON Semiconductor 5 Watt zener, to
-3
obtain compensated voltage-temperature characteristics. 6.316 -4
Examination of the curve in Figure 4 indicates that a 10 volt -5
zener diode exhibits a temperature coefficient of 6.314 -6
approximately +5.5 mV/°C. At a current level of 100 mA a -55 -10 25 62 100
temperature coefficient of approximately –2.0 mV/°C is TEMPERATURE (°C)
characteristic of the 1N4001 rectifiers. A series connection
Figure 5. Voltage versus Temperature,
of three silicon 1N4001 rectifiers produces a total
Typical for ON Semiconductor 1N827
temperature coefficient of approximately –6 mV/°C and a Temperature Compensated Zener Diode
total forward drop of approximately 2.17 volts at 25°C. The
combination of three silicon rectifiers and the 10 volt zener
diode produces a device with a coefficient of approximately
–0.5 mV/°C and a total breakdown voltage at 100 mA of This non-linearity of the voltage temperature
approximately 12.2 volts. Calculation shows this to be a characteristic leads to a definition of a representative design
temperature stability of –0.004%/°C. parameter ∆VZ. For each device type there is a specified
maximum change allowable. The voltage temperature
 0.512.2mVV
C

100 stability measurement consists of voltage measurement at
specified temperatures (for the 1N821 Series the
temperatures are –55, 0, +25, +75, and +100°C). The voltage
The temperature compensated zener employs the readings at each of the temperatures is compared with
technique of specially selected dice. This provides optimum readings at the other temperatures and the largest voltage
voltage temperature characteristics by close control of dice change between any of the specified temperatures
resistivities. determines the exact device type. For devices registered
7 prior to complete definition of the voltage temperature
ZENER VOLTAGE (10 mA AT 25°C)
6 stability measurement, the allowable maximum voltage
5 DIFFUSED THREE change over the temperature range is derived from the
JUNCTION FORWARDS calculation converting %/°C to mV over the temperature
4
ALLOYDIFFUSED range. Under this standard definition, %/°C is merely a
3 JUNCTION TWO
mV/ C

° FORWARDS nomenclature and the meaningful allowable voltage

2
deviation to be expected becomes the designed parameter.
1 ONE
FORWARD
0
-1
-2
-3
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VOLTS

Figure 4.

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 CURRENT VOLTAGE (VOLTS)
-6.6 -6.5 -6.4 -6.3 -6.2 -6.1 -6 -5.9
Thus far, temperature compensated zeners have been
discussed mainly with regard to temperature and voltage.
25°C
However, the underlying assumption throughout the
previous discussion was that current remained constant. -55 +100
There is a significant change in the temperature

CURRENT
coefficient of a unit depending on how much above or below
the test current the device is operated.
A particular unit with a 0.01%/°C temperature coefficient
∆V
at 7.5 mA over a temperature range of –55°C to +100°C ∆IMAX
MAX
could possibly have a 0.0005%/°C temperature coefficient
at 11 mA. In fact, there is a particular current which can be
determined for each individual unit that will give the lowest
TC.
Manufacturing processes are designed so that the yields of Figure 7. Effects of Poorly Regulated Current
low TC units are high at the test specification for current. A
unit with a high TC at the test current can have a low TC at The three volt-ampere curves do not usually cross over at
some other current. A look at the volt-ampere curves at exactly the same point. However, this does not take away
different temperatures illustrates this point clearly (see from the argument that current regulation is probably the
Figure 6). most critical consideration when using
temperature-compensated units.
VOLTAGE (VOLTS)
-6.6 -6.5 -6.4 -6.3 -6.2 -6.1 -6 -5.9
ZENER IMPEDANCE AND CURRENT
25°C REGULATION
+100 Zener impedance is defined as the slope of the V-I curve
-55
at the test point corresponding to the test current. It is
CURRENT

B IB
measured by superimposing a small ac current on the dc test
∆VB
current and then measuring the resulting ac voltage. This
procedure is identical with that used for regular zeners.
Impedance changes with temperature, but the variation is
A
IA usually small and it can be assumed that the amount of
current regulation needed at +25°C will be the same for other
C temperatures.
∆VC IC
As an example, one might want to determine the amount
of current regulation necessary for the device described
Figure 6. Voltage-Ampere Curves Showing below when the maximum deviation in voltage due to
Crossover at A current variation is ±5 millivolts.

If the three curves intersect at A, then operation at IA VZT = 6.32 V

results in the least amount of voltage deviation due to IZT = 7.5 mA
ZZT = 15 Ω @ +25°C
temperature from the +25°C voltage. At IB and IC there are
∆V = ∆I⋅VZZT
greater excursions (∆VB and ∆VC) from the +25°C voltage 0.005 = ∆I⋅V15
as temperature increases or decreases. 0.005
∆I = = 0.33 mA
15
THE EFFECTS OF POOR CURRENT
REGULATION Therefore, the current cannot vary more than 0.33 mA.
The amount of current regulation necessary is:
If current shifts (randomly or as a function of 0.33
x 100% = 4.5% regulation.
temperature), then an area of operation can be defined for the 7.5
temperature compensated zener.
Once again the curves are drawn, this time a shaded area If the device of Figure 5 is considered to be the device used
is shown on the graph. The upper and lower extremities in the preceding discussion, it becomes apparent that on the
denote the maximum current values generated by the current average more voltage variation is due to current fluctuation
supply while the voltage extremes at each current are shown than is due to temperature variation. Therefore, to obtain a
by the left and right sides of the area, shown in Figure 7. truly stable reference source, the device must be driven from
a constant current source.

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 BASIC VOLTAGE REGULATION USING ZENER DIODES

BASIC CONCEPTS OF REGULATION going to have to be for the same VO, and not until the ratio
The purpose of any regulator circuit is to minimize output of RS to RR reaches infinity will the output be held entirely
variations with respect to variations in input, temperature, constant for variation in VI. This, of course, is an
and load requirements. The most obvious use of a regulator impossibility, but it does stress the fact that the regulation
is in the design of a power supply, but any circuit that improves as the output impedance becomes lower and lower.
incorporates regulatory technique to give a controlled Where the output impedance of Figure 1 is given by
output or function can be considered as a regulator. In RSR R
RO = (3)
general, to provide a regulated output voltage, electronic RS + RR
circuitry will be used to pass an output voltage that is
significantly lower than the input voltage and block all It is apparent from this relation that as regulation is
voltage in excess of the desired output. Allocations should improving with RS increasing and RR decreasing the output
also be made in the regulation circuitry to maintain this impedance RO is decreasing, and is approximately equal to
output voltage for variation in load current demand. RR as the ratio is 10 times or greater. The regulation of this
There are some basic rules of thumb for the electrical circuit can be greatly improved by inserting a reference
requirements of the electronic circuitry in order for it to source of voltage in series with RR such as Figure 2.
provide regulation. Number one, the output impedance
+ +
should be kept as low as possible. Number two, a controlling RS
reference needs to be established that is relatively
insensitive to the prevailing variables. In order to illustrate RR
VI RL VO
the importance of these rules, an analysis of some simple
regulator circuits will point out the validity of the VR
statements. The circuit of Figure 1 can be considered a
regulator. This circuit will serve to illustrate the importance - -
of a low output impedance.
Figure 2. Regulator with Battery Reference Source
The resistors RS and RR can be considered as the source
and regulator impedances, respectively. The resistance RR represents the internal impedance of the
The output of the circuit is: battery. For this circuit, the output is
(1)
VO = V I x
RRRL
R R + RL
RRR
RS + R L
RR 
RRL
R R +RRLL

=
RS
VI
RS
VO = VR + VI
RS
+
V
RS
+1
(4)
+ +1 RL RR
RL RR
Then for incremental changes in the input VI, the changes
+ +
RS
in VO will be dependent on the second term of equation
(4), which again makes the regulation dependent on the
VI RR RL VO ratio of RS to RR. Where changes in the output voltage
or the regulation of the circuit in Figure 1 were directly
and solely dependent upon the input voltage and output
- - impedance, the regulation of circuit 2 will have an output
that varies about the reference source VR in accordance
Figure 1. Shunt Resistance Regulator with the magnitude of battery resistance RR and its
fluctuations for changes in VI. Theoretically, if a perfect
For a given incremental change in VI, the changes in VO
battery were used, that is, VR is constant and RR is zero,
will be:
the circuit would be a perfect regulator. In other words,

∆VO = ∆VI R1RR L

RRS + RS + 1
RL RR RR

(2)
in line with the basic rules of thumb the circuit exhibits
optimum regulation with an output impedance of zero, and
a constant reference source.
Assuming RL fixed at some constant value, it is obvious For regulator application, a zener diode can be used
from equation (2) that in order to minimize changes in VO instead of a battery with a number of advantages. A battery’s
for variations in VI, the shunt resistor RR should be made as resistance and nominal voltage will change with age and
small as possible with respect to the source resistor RS. load demand; the ON Semiconductor zener diode
Obviously, the better this relation becomes, the larger VI is characteristics remain unchanged when operating within its

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specified limits. Any voltage value from a couple of volts to device in the breakover region in order to maintain the
hundreds of volts is available with zener diodes, where zener voltage reference. The minimum current can be either
conventional batteries are limited in the nominal values chosen at some point beyond the knee or found on the
available. Also, the zener presents a definite size advantage, manufacturer’s data sheet (IZK). The basic voltage loop
and is less expensive than a battery because it is permanent equation for this circuit is:
and need not be regularly replaced. The basic zener diode
shunt regulator circuit is shown in Figure 3. VI = (IZ + IL)RS + VZ (5)
+ +
The minimum zener current will occur when VI is
RS
minimum, VZ is maximum, and IL is maximum, then
solving for RS, we have:
RZ ZENER
VI DIODE VO VI(min) – VZ(max)
RL RS = (6)
IZ(min) + IL(max)
VZ
Having found RS, we can determine the maximum power
- -
dissipation PZ for the zener diode.
PZ(max) = IZ(max) VZ(max) (7)
Figure 3. Basic Zener Diode Shunt Regulator
Where:
Depending upon the operating conditions of the device, a VI(max) – VZ(min)
zener diode will exhibit some relatively low zener IZ(max) = – IL(min) (8)
RS
impedance RZ and have a specified breakover voltage of VZ
that is essentially constant. These inherent characteristics Therefore:
make the zener diode suited for voltage regulator (9)
applications. PZ(max) =  VI(max)
VI(max) – VZ(min)
RS
RS
VZ(min)
– IL(min)
IL(min)  VZ(max)

DESIGNING THE ZENER SHUNT REGULATOR

Once the basic regulator components values have been
For any given application of a zener diode shunt regulator, determined, adequate considerations will have to be given to
it will be required to know the input voltage variations and the variation in VO. The changes in VO are a function of four
output load requirements. The calculation of component different factors; namely, changes in VI, IL, temperature, and
values will be directly dependent upon the circuit the value of zener impedance, RZ. These changes in VO can
requirements. The input may be constant or have maximum be expressed as:
and minimum values depending upon the natural regulation
or waveform of the supply source. The output voltage will ∆VI R SRZ
∆VO = – ∆IL + TC∆TVZ (10)
be determined by the designer’s choice of VZ and the circuit 1 + RS RS R S + RZ
+
requirements. The actual value of VZ will be dependent RZ RL
upon the manufacturer’s tolerance and some small variation
The value of ∆VO as calculated with equation (10) will
for different zener currents and operating temperatures.
quite probably be slightly different from the actual value
For all practical purposes, the value of VZ as specified on
the manufacturer’s data sheet can be used to approximate when measured empirically. For all practical purposes
VO in computing component values. The requirement for though, this difference will be insignificant for regulator
load current will be known and will vary within some given designs utilizing the conventional commercial line of zener
range of IL(min) to IL(max). diodes.
The design objective of Figure 3 is to determine the proper Obviously to precisely predict ∆VO with a given zener
values of the series resistance, RS, and zener power diode, exact information would be needed about the zener
dissipation, PZ. A general solution for these values can be impedance and temperature coefficient throughout the
developed as follows, when the following conditions are variation of zener current. The “worst case” change can only
known: be approximated by using maximum zener impedance and
VI (input voltage) from VI(min) to VI(max) with typical temperature coefficient.
The basic zener shunt regulator can be modified to
VO (output voltage) from VZ(min) to VZ(max)
minimize the effects of each term in the regulation equation
IL (load current) from IL(min) to IL(max) (10). Taking one term at a time, it is apparent that the
The value of RS must be of such a value so that the zener regulation or changes in output ∆VO will be improved if the
magnitude of ∆VI is reduced. A practical and widely used
current will not drop below a minimum value of IZ(min).
technique to reduce input variation is to cascade zener shunt
This minimum zener current is mandatory to keep the
regulators such as shown in Figure 4.

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 + +
RS1 RS2

VI Z1 VO′ = VI′ = VZ1 RL′ Z2 RL VO

- -

Figure 4. Cascaded Zener Shunt Regulators Reduce

∆VO by Reducing ∆VI to the Succeeding Stages

This, in essence, is a regulator driven with a pre-regulator high voltage device. So to speak, this technique will kill two
so that the over all regulation is the product of both. The birds with one stone, as it can also be used to minimize
regulation or changes in output voltage is determined by: temperature induced variations of the regulator.
In most regulator applications, the single most detrimental
∆VZI RS2RZ2
∆VO = – factor affecting regulation is that of variation in junction
RS2 RS2 RS2 + RZ2
1+ + temperature. The junction temperature is a function of both
RL RZ2
the ambient temperature and that of self heating. In order to
∆IL + TC2 ∆TVZ2 (11) illustrate how the overall temperature coefficient is
improved with series lower voltage zener, a mathematical
Where: relationship can be developed. Consider the diagram of
∆VI RS1RZ1
∆VZ1 = ∆VO′ = – Figure 5.
RS1 RS1 RS1 + RZ1
1+ + + +
RL′ RZ1
RS
∆IL′ + TC1 ∆TVZ1 (12)
Z1
RLRZ2
RL′ = RS2 + and IL′ = IL + IZ2 Z2
RL + RZ2 VI RL VO

The changes in output with respect to changes in input for

both stages assuming the temperature and load are constant Zn
is - -
∆VO ∆VO Figure 5. Series Zener Improve Dynamic Impedance
= = Regulation of second stage (13)
∆VZ1 ∆VO′ and Temperature Coefficient

∆VO′ With the temperature coefficient TC defined as the % change

= Regulation of first stage (14)
∆VI per °C, the change in output for a given temperature range
∆VO ∆VO ∆VO′ will equal some overall TC x ∆T x Total VZ. Such as
= x = Combined regulation (15)
∆VI ∆VO′ ∆VI ∆VO(∆T) = TC ∆T (VZ1 + VZ2 + . . . + VZN) (16)
Obviously, this technique will vastly improve overall Obviously, the change in output will also be equal to the
regulation where the input fluctuates over a relatively wide sum of the changes as attributed from each zener.
range. As an example, let’s say the input varies by ±20% and
the regulation of each individual stage reduces the variation ∆VO(∆T) = ∆T(TC1VZ1 + TC2VZ2 + . . . + TCNVZN) (17)
by a factor of 1/20. This then gives an overall output Setting the two equations equal to each other and solving
variation of ±20% × (1/20)2 or ±0.05%. for the overall TC, we get
The next two factors in equation (10) affecting regulation
are changes in load current and temperature excursions. In TC∆T(VZ1 + VZ2 + . . . + VZN) = ∆T(TC1VZ1
(18)
order to minimize changes for load current variation, the + TC2VZ2 + . . . + TCNVZN)
output impedance RZRS/(RZ + RS) will have to be reduced. TC1 VZ1 + TC2VZ2 + . . . + TCNVZN
This can only be done by having a lower zener impedance TC = (19)
VZ1 + VZ2 + . . . + VZN
because the value of RS is fixed by circuit requirements.
There are basically two ways that a lower zener impedance For equation (19) the overall temperature coefficient for
can be achieved. One, a higher wattage device can be used any combination of series zeners can be calculated. Say for
which allows for an increase in zener current of which will instance several identical zeners in series replace a single
reduce the impedance. The other technique is to series lower higher voltage zener. The new overall temperature
voltage devices to obtain the desired equivalent voltage, so coefficient will now be that of one of the low voltage
that the sum of the impedance is less than that for a single devices. This allows the designer to go to the manufacturer’s

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data sheet and select a combination of low TC zener diodes problems because individual voltages are additive and the
in place of the single higher TC devices. Generally speaking, devices all carry the same current and the extent that this
the technique of using multiple devices will also yield a technique can be used is only restricted by the feasibility of
lower dynamic impedance. Advantages of this technique are circuit parameters and cost. On the other hand, caution must
best demonstrated by example. Consider a 5 watt diode with be taken when attempting to parallel zener diodes. If the
a nominal zener voltage of 10 volts exhibits approximately devices are not closely matched so that they all break over
0.055% change in voltage per degree centrigrade, a 20 volt at the same voltage, the low voltage device will go into
unit approximately 0.075%/°C, and a 100 volt unit conduction first and ultimately carry all the current. In order
approximately 0.1%/°C. In the case of the 100 volt diode, to avoid this situation, the diodes should be matched for
five 20 volt diodes could be connected together to provide equal current sharing.
the correct voltage reference, but the overall temperature
coefficient would remain that of the low voltage units, i.e. EXTENDING POWER AND CURRENT RANGE
0.075%/°C. It should also be noted that the same series The most common practice for extending the power
combination improves the overall zener impedance in handling capabilities of a regulator is to incorporate
addition to the temperature coefficient. A 20 volt, 5 watt transistors in the design. This technique is discussed in detail
ON Semiconductor zener diode has a maximum zener in the following sections of this chapter. The second
impedance of 3 ohms, compared to the 90 ohms impedance disadvantage to the basic zener shunt regulator is that
which is maximum for a 100 volt unit. Although these because the device does not have a gain function, a feedback
impedances are measured at different current levels, the system is not possible with just the zener resistor
series impedance of five 20 volt zener diodes is still much combination. For very precise regulators, the design will
lower than that of a single 100 volt zener diode at the test normally be an electronic circuit consisting of transistor
current specified on the data sheet. devices for control, probably a closed loop feedback system
For the ultimate in zener shunt regulator performance, the with a zener device as the basic referencing element.
aforementioned techniques can be combined with the proper The concept of regulation can be further extended and
selection of devices to yield an overall improvement in improved with the addition of transistors as the power
regulation. For instance, a multiple string of low voltage absorbing elements to the zener diodes establishing a
zener diodes can be used as a preregulator, with a series reference. There are three basic techniques used that
combination of zero TC reference diodes in the final stage combine zener diodes and transistors for voltage regulation.
such as Figure 6. The shunt transistor type shown in Figure 7 will extend the
The first stage will reduce the large variation in VI to some power handling capabilities of the basic shunt regulator, and
relatively low level, i.e. ∆VZ. This ∆VZ is optimized by exhibit marked improvement in regulation.
utilizing a series combination of zeners to reduce the overall
TC and ∆VZ. Because of this small fluctuation of input to the + +
RS
second stage, and if RL is constant, the biasing current of the IC
TC units can be maintained at their specified level. This will IZ Z
give an output that is very precise and not significantly IB
VI Q1 IL RL VO
affected by changes in input voltage or junction temperature.
+ + VBE
RS1 RS2 RB
Z1
TC1 - -
Z2 Figure 7. Basic Transistor Shunt Regulator
VI RL VO
Z3 In this configuration the source resistance must be large
TC2
enough to absorb the overvoltage in the same manner as in
Z4 the conventional zener shunt regulator. Most of the shunt
- -
regulating current in this circuit will pass through the
transistor reducing the current requirements of the zener
Figure 6. Series Zeners Cascaded With Series
diode by essentially the dc current gain of the transistor hFE.
Reference Diodes for Improved Zener
Shunt Regulation Where the total regulating shunt current is:
IS = IZ + IC = IZ + IB hFE
The basic zener shunt regulator exhibits some inherent
limitations to the designer. First of all, the zener is limited to where
its particular power dissipating rating which may be less IZ = IB + IRB and IB >> IRB
than the required amount for a particular situation. The total therefore
magnitude of dissipation can be increased to some degree by IS ≈ IZ + IZ hFE = IZ (1 + hFE) (20)
utilizing series or parallel units. Zeners in series present few

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 The output voltage is the reference voltage VZ plus the EMITTER FOLLOWER REGULATOR
forward junction drop from base to emitter VBE of the Another basic technique of transistor-zener regulation is
transistor. that of the emitter follower type shown in Figure 8.
VO = VZ + VBE (21) Q1
IC
The values of components and their operating condition - -
RS +
is dictated by the specific input and output requirements and
the characteristics of the designer’s chosen devices, as RB VBE
-
shown in the following relations: IRB
VI VO
VI(min) – VO(max) RL
RS = (22) IL
IZ(min) [1+hFE(min)] + IL(max) -
Z1
IZ +
VI(min) – VZ(max) + +
RB = (23)
IZ(min)
Figure 8. Emitter Follower Regulator

PDZ = IZ(max) VZ(max) (24) This circuit has the desirable feature of using a series
transistor to absorb overvoltages instead of a large fixed
resistor, thereby giving a significant improvement in
when efficiency over the shunt type regulator. The transistor must
(25) be capable of carrying the entire load current and

IZ(max) = 
VV
I(max)  –VVO(min)
I(max)
RRS S
O(min)
 I–L(min)
IL(min)  1
1 +hhFE(min)
FE(min)

withstanding voltages equal to the input voltage minus the
load voltage. This, of course, imposes a much more stringent
power handling requirement upon the transistor than was
required in the shunt regulator. The output voltage is a
function of the zener reference voltage and the base to
hence
(26) emitter drop of Q1 as expressed by the equation (28).

PDZ =  VV
I(max)  –VVO(min)
I(max)
RRS S
O(min)
 I–L(min) 
IL(min)
VZ(max)
1
1 +hhFE(min)
FE(min)

VO = VZ – VBE

The load current is approximately equal to the transistor

(28)

collector current, such as shown in equation (29).

IL(max) ≈ IC(max)
 
(27) (29)
VV  –VVO(min) 1888888
VO(max)

I(max)
I(max) O(min)
PDQ =  I–L(min)
IL(min) The designer must select a transistor that will meet the
RRSS
following basic requirements:
Regulation with this circuit is derived in essentially the PD ≅ (VI(max) – VO)IL(max)
same manner as in the shunt zener circuit, where the output
impedance is low and the output voltage is a function of the IC(max) ≈ IL(max)
reference voltage. The regulation is improved with this
configuration because the small signal output impedance is BVCES ≥ (VI(max) – VO) (30)
reduced by the gain of Q1 by 1/hFE.
One other highly desirable feature of this type of regulator Depending upon the designer’s choice of a transistor and
is that the output is somewhat self compensating for the imposed circuit requirements, the operation conditions
temperature changes by the opposing changes in VZ and of the circuit are expressed by the following equations:
VBE for VZ ≈ 10 volts. With the zener having a positive VZ = VO + VBE
2 mV/°C TC and the transistor base to emitter being a
negative 2 mV/°C TC, therefore, a change in one is cancelled = VO + IL(max)/gFE(min) @ IL(max)
by the change in the other. Even though this circuit is a very
effective regulator it is somewhat undesirable from an VI(min) – VZ – VCE(min) @ IL(max)
RS = (31)
efficiency standpoint. Because the magnitude of RS is IL(max)
required to be large, and it must carry the entire input Where VCE(min) is an arbitrary value of minimum
current, a large percentage of power is lost from input to collector to emitter voltage and gFE is the transconductance.
output. This is sufficient to keep the transistor out of saturation,
which is usually about 2 volts.

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 VCE(min) @ IL(max) transistor with the zener for the shunt control element as
RB =
IL(max)/hFE(min) @ IL(max) + IZ(min) (32) illustrated in Figure 10.

RS
VI(max) –VZ -
IZ(max) = (33) Q1
R B + RZ CONSTANT
CURRENT
IC2
SOURCE
PDZ = IZ(max)VZ (34) Z1
Q2
VI VO
RL
Actual PDQ = (VI(max) – VO) IL(max) (35)

There are two primary factors that effect the regulation

most in a circuit of this type. First of all, the zener current RB
may vary over a considerable range as the input changes
from minimum to maximum and this, of course, may have +
a significant effect on the value of VZ and therefore VO.
Figure 10. Series Pass Regulator
Secondly, VZ and VBE will both be effected by temperature
changes which are additive on their effect of output voltage.
This can be seen by altering equation (28) to show changes This is the third basic technique used for transistor-zener
in VO as dependent on temperature, see equation (36). regulators. This technique or at least a variation of it, finds
the widest use in practical applications. In this circuit the
VO(∆T) = ∆T[(+TC) VZ – (–TC) VBE] (36) transistor Q1 is still the series control device operating as an
The effects of these detrimental factors can be minimized emitter follower. The output voltage is now established by
by replacing the bleeder resistor RB with a constant current the transistor Q2 base to emitter voltage and the zener
source and the zener with a reference diode in series with a voltage. Because the zener is only supplying base drive to
forward biased diode (see Figure 9). Q2, and it derives its bias from the output, the zener current
remains essential constant, which minimizes changes in VZ
RS due to IZ excursions. Also, it may be possible (VZ ≈ 10 V)
- - to match the zener to the base-emitter junction of Q2 for an
Q1 output that is insensitive to temperature changes. The
CONSTANT
CURRENT IB = K constant current source looks like a very high load
SOURCE impedance to the collector of Q2 thus assuming a very high
voltage gain. There are three primary advantages gained
VI RL VO with this configuration over the basic emitter follower:
FORWARD
BIAS DIODE 1. The increased voltage gain of the circuit with the
TC ZENER
addition of Q2 will improve regulation for changes in
both load and input.
+ +
2. The zener current excursions are reduced, thereby
Figure 9. Improved Emitter Follower Regulator improving regulation.
3. For certain voltages the configuration allows good
The constant current source can be either a current limiter temperature compensation by matching the
diode or a transistor source. The current limiter diode is temperature characteristics of the zener to the
ideally suited for applications of this type, because it will base-emitter junction of Q2.
supply the same biasing current irregardless of collector to
base voltage swing as long as it is within the voltage limits The series pass regulator is superior to the other transistor
of the device. This technique will overcome changes in VZ regulators thus far discussed. It has good efficiency, better
for changes in IZ and temperature, but changes in VBE due stability and regulation, and is simple enough to be
to load current changes are still directly reflected upon the economically practical for a large percentage of
output. This can be reduced somewhat by combining a applications.

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 REGULATING
POWER
ELEMENT

REFERENCE

INPUT CONTROL AMPLIFIER AND LOAD OUTPUT

UNIT ERROR
DETECTION

Figure 11. Block Diagram of Regulator with Feedback

EMPLOYING FEEDBACK FOR In this circuit, the zener establishes a reference level for
OPTIMUM REGULATION the differential amplifier composed of Q4 and Q5 which will
The regulators discussed thus far do not employ any set the base drive for the control transistor Q3 to regulate the
feedback techniques for precise control and compensation series high gain transistor combination of Q1 and Q2. The
and, therefore, find limited use where an ultra precise differential amplifier samples the output at the voltage
regulator is required. In the more sophisticated regulators dividing network of R8, R9, and R10. This is compared to the
some form of error detection is incorporated and amplified reference voltage provided by the zener Z1. The difference,
through a feedback network to closely control the power if any, is amplified and fed back to the control elements. By
elements as illustrated in the block diagram of Figure 11. adjusting the potentiometer, R9, the output level can be set
Regulating circuits of this type will vary in complexity to any desired value within the range of the supply. (The
and configuration from application to application. This output voltage is set by the relation VO = VZ[(RX +
technique can best be illustrated with a couple of actual RY)/RX].) By matching the transistor Q4 and Q5 for
circuits of this type. The feedback regulators will generally variations in VBE and gain with temperature changes and
be some form of series pass regulator, for optimum incorporating a temperature compensated diode as the
performance and efficiency. A practical circuit of this type reference, the circuit will be ultra stable to temperature
that is extensively utilized is shown in Figure 12. effects. The regulation and stability of this circuit is very
good, and for this reason is used in a large percentage of
commercial power supplies.

+ +
Q1

R2 R7
R8
Z1 RX
Q2
Q4 Q5
R1
VI R9 RL VO

R3
RY R10
Q3 R4 R5 R6
C1

- -

Figure 12. Series Pass Regulator with Error Detection and Feedback
Amplification Derived from a Differential Amplifier

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 + +
Q1

Q2
R1
REFERENCE R6
AMPLIFIER

VI R7 RL VO
R2

R4
Q3
R8
R3
R5
D1
- -
Figure 13. Series Pass Regulator with Temperature Compensated Reference Amplifier

Another variation of the feedback series pass regulator is CONSTANT CURRENT SOURCES FOR
shown in Figure 13. This circuit incorporates a stable REGULATOR APPLICATIONS
temperature compensated reference amplifier as the primary Several places throughout this chapter emphasize the
control element. need for maintaining a constant current level in the various
This circuit also employs error detection and amplified biasing circuits for optimum regulation. As was mentioned
feedback compensation. It is an improved version over the previously in the discussion on the basic series pass
basic series pass regulator shown in Figure 10. The series regulator, the current limiter diode can be effectively used
element is composed of a Darlington high gain for the purpose.
configuration formed by Q1 and Q2 for an improved Aside from the current limiter diode a transistorized
regulation factor. The combined gain of the reference source can be used. A widely used technique is shown
amplifier and Q3 is incorporated to control the series unit. incorporated in a basic series pass regulator in Figure 14.
This reduced the required collector current change of the The circuit is used as a preregulated current source to
reference amplifier to control the regulator so that the bias supply the biasing current to the transistor Q2. The constant
current remains close to the specified current for low current circuit is seldom used alone, but does find wide use
temperature coefficient. Also the germanium diode D1 will in conjunction with voltage regulators to supply biasing
compensate for the base to emitter change in Q3 and keep the current to transistors or reference diodes for stable
reference amplifier collector biasing current fairly constant operation. The Zener Z2 establishes a fixed voltage across
with temperature changes. Proper biasing of the zener and RE and the base to emitter of Q3. This gives an emitter
transistor in the reference amplifier must be adhered to if the current of IE = (VZ – VBE)/RE which will vary only slightly
output voltage changes are to be minimized. for changes in input voltage and temperature.
- -
Q1

RE
Z2
Z1

VI RL VO
RB2 Q3

CONSTANT
CURRENT Q2 RB1
SOURCE
+ +

Figure 14. Constant Current Source Incorporated in a Basic Regulator Circuit

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 IMPEDANCE CANCELLATION Equation 40 merely states that the change in reference
One of the most common applications of zener diodes is voltage with input tends to zero when the zener impedance
in the general category of reference voltage supplies. The tends also to zero, as expected.
function of the zener diode in such applications is to provide The figure of merit equation can be applied to the circuits
a stable reference voltage during input voltage variations. of Figure 16 and 17 to explain impedance cancellation. The
This function is complicated by the zener diode impedance, Change Factor equations for each leg and the reference
which effectively causes an incremental change in zener voltage VR are:
breakdown voltage with changing zener current. ∆VZ RZ
CFVZ = = = RA (41)
R1 R2 ∆VI R 1 + RZ
+
∆V2 R3
VI Z1 TC1 CFV2 = = = RB (42)
∆VI R 2 + R3
-
∆VR RZ R3
CFVR = = = = RA – RB (43)
Figure 15. Impedance Cancellation with An ∆VI R 1 + RZ R 2 + R3
Uncompensated Zener

It is possible, however, by employing a bridge type circuit I

which includes the zener diode and current regulating
resistance in its branch legs, to effectively cancel the effect R1
of the zener impedance. Consider the circuit of Figure 15 as
an example. This is the common configuration for a zener VI′ ∆VI
diode voltage regulating system. The zener impedance at 20
mA of a 1N4740 diode is typically 2 ohms. If the supply
voltage now changes from 30 V to 40 V, the diode current VZ
determined by R1 changes from 20 to 30 mA; the average
zener impedance becomes 1.9 ohms; and the reference
voltage shifts by 19 mV. This represents a reference change
of .19%, an amount far too large for an input change of 30% Figure 16. Standard Voltage
in most reference supplies. Regulation Circuit
The effect of zener impedance change with current is
relatively small for most input changes and will be neglected
for this analysis. Assuming constant zener impedance, the
zener voltage is approximated by R1 R2

V′Z = VZ + Z(I′Z – IZ) (37) VR

where V′Z is the new zener voltage VI′ ∆VI

VZ is the former zener voltage
I′Z is the new zener current VZ V2
IZ is the new zener current flowing at VZ R3
RZ is the zener impedance

Then ∆VZ = Z∆IZ

Let the input voltage VI in Figure 15 increase by an Figure 17. Impedance Cancellation Bridge
amount ∆VI
∆VI – ∆VZ
Then ∆I = (38)
R1
∆VZ
Also ∆I = (39)
RZ

Solving ∆VIRZ – ∆VZRZ – ∆VZR1 = 0

∆VZ RZ
Or = (40)
∆VI R 1 + RZ

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 Since the design is to minimize CFVR, RB can be set equal It is seen that γVR can be minimized by setting RB = RA.
to RA. The Input Regulation Factors are: Note that it is not necessary to match R3 to RZ and R2 to
R1. Thus R3 and R2 can be large and hence dissipate low

power. This discussion is assuming very light load currents.

∆VZ VI 1
γVZ =

= (44)
∆VI Vi
VZZ VZ R
V1I
1+
VI Vi
RZZ

γV2 =
∆V2
∆VI

VI
Vi
V2Z
=1 (45)

γVR =
∆VR

VI 1

= (46)
∆VI Vi
VRZ V
VZI R
V1I VI 1
1+
Vi
VIZ Vi Z
RZ Vi Z RB
1–
RA

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 ZENER PROTECTIVE CIRCUITS AND TECHNIQUES:
BASIC DESIGN CONSIDERATIONS

INTRODUCTION of the input voltage transient and the total circuit impedance
The reliability of any system is a function of the ability of minus the load current. The worst case occurs when load
the equipment to operate satisfactorily during moderate current is zero and may be expressed as follows:
changes of environment, and to protect itself during VI(max) – VZ
otherwise damaging catastrophic changes. The silicon zener IZ(max) = (1)
RS
diode offers a convenient, simple but effective means of
achieving this result. Its precise voltage sensitive RS
+
breakdown characteristic provides an accurate limiting
element in the protective circuit. The extremely high
switching speed possible with the zener phenomenon allows
the circuit to react faster by orders of magnitude that POWER LOAD
Z
SUPPLY
comparable mechanical and magnetic systems.
By shunting a component, circuit, or system with a zener
diode, the applied voltage cannot exceed that of the -
particular device’s breakdown voltage. (See Figure 1.)
A device should be chosen so that its zener voltage is
somewhat higher than the nominal operating voltage but Figure 1. Basic Shunt Zener Transient
lower than the value of voltage that would be damaging if Protection Circuit
allowed to pass. In order to adequately incorporate the zener The maximum power dissipated by the zener is
diode for circuit protection, the designer must consider
several factors in addition to the required zener voltage. The VI(max) – VZ
PZ(max) = IZ(max) VZ(max)= VZ(max) (2)
first thing the designer should know is just what transient RS
characteristics can be anticipated, such as magnitude, Also, more than one device can be used, i.e., a series
duration, and the rate of reoccurrence. For short duration string, which will reduce the percentage of total power to be
transients, it is usually possible to suppress the voltage spike dissipated per device by a factor equal to the number of
and allow the zener to shunt the transient current away from devices in series. The number of diodes required can be
the load without a circuit shutdown. On the other hand, if the found from the following expression:
over-voltage condition is for a long duration, the protective
circuit may need to be complimented with a disconnect PZ(max)
Number = (3)
element to protect the zener from damage created by PZ (allowable per device)
excessive heating. In all cases, the end circuit will have to be
Any fraction of a zener must be taken as the next highest
designed around the junction temperature limits of the
whole number. This design discussion has been based upon
device.
the assumption that the transient is of a single shot,
The following sections illustrate the most common zener
non-recurrent type. For all practical purposes it can be
protective circuits, and will demonstrate the criteria to be
considered non-recurrent if the “off period” between
followed for an adequate design.
transients is at least four times the thermal time constant of
BASIC PROTECTIVE CIRCUITS the device. If the “off period” is shorter than this, then the
FOR SUPPLY TRANSIENTS design calculations must include a factor for the duty cycle.
This is discussed in detail in Chapter 4. In Chapter 4 there are
The simple zener shunt protection circuit shown in also some typical curves relating peak power, pulse duration
Figure 1 is widely used for supply voltage transient and duty cycle that may be appropriate for some designs.
protection where the duration is relatively short. The circuit Obviously, the factor that limits the feasibility of the basic
applies whether the load is an individual component or a zener shunt protective circuit is the pulse durations “t”. As
complete circuit requiring protection. Whenever the input the duration increases, the allowable peak power for a given
exceeds the zener voltage, the device avalanches into configuration decreases and will approach a steady state
conduction clamping the load voltage to VZ. The total condition.
current the diode must carry is determined by the magnitude

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 LOAD
RS FUSE
+
POWER VS R C
SUPPLY
-

Figure 2. Overvoltage Protection with Zener Diodes and Fuses

When the anticipated transients expected to prevail for a would be reached before the fuse would begin to protect the
specific situation are of long duration, a basic zener shunt load.
becomes impractical, in such a case the circuit can be
improved by using a complementary disconnect element. 220
The most common overload protective element is without a B"
200
doubt the standard fuse. The common fuse adequately
180
protects circuit components from over-voltage surges, but at

FUSE CURRENT (mA)

the same time must be chosen to eliminate “nuisance fusing” 160 ZENER DIODE WITH,
which results when the maximum current rating of the fuse RESISTIVE LOAD
140
is too close to the normal operational current of the circuit.
RESISTIVE
120 LOAD ONLY
AN EXAMPLE PROBLEM: SELECTING A A"
100
FUSE-ZENER COMBINATION
80 ZENER BREAKDOWN,
Consider the case illustrated in Figure 2. Here the load VOLTAGE
NORMAL LOAD VOLTAGE
components are represented by a parallel combination of R 60
60 70 80 90 100 110 120 130 140
and C, equivalent to many loads found in practice. The
VS, SUPPLY VOLTAGE (VOLTS)
maximum capacitor voltage rating is usually the
circuit-voltage limiting factor due to the cost of high voltage Figure 3. Fuse Current versus
capacitors. Consequently, a protective circuit must be Supply Voltage
designed to prevent voltage surges greater than 1.5 times
normal working voltage of the capacitor. It is common, Selection of the correct power rating of zener diodes to be
however, for the supply voltage to increase to 135% normal used for surge protection depends upon the magnitude and
for long periods. Examination of fuse manufacturers’ duration of anticipated surges. Often in circuits employing
melting time-current curves shows the difficulty of trying to both fuses and zener diodes, the limiting surge duration will
select a fuse which will melt rapidly at overload (within one be the melting time of the fuse. This, in turn, depends on the
or two cycles of the supply frequency to prevent capacitor nature of the load protected and the length of time it will
damage), and will not melt when subjected to voltages close tolerate an overload.
to overload for prolonged periods. As a first solution to the example problem, consider a
By connecting a zener diode of correct voltage ratings zener diode with a nominal breakdown voltage of 110 volts
across the load as shown, a fuse large enough to withstand measured at a test current (IZT) of 110 mA. Since the fuse
normal current increases for long periods may be chosen. requires about 200 mA to melt and 100 mA are drawn
The sudden current increase when zener breakdown occurs through the load at this voltage, the load voltage will never
melts the fuse rapidly and protects the load from large exceed the zener breakdown voltage on slowly rising inputs.
surges. In Figure 3, fuse current was plotted against supply Transients producing currents of approximately 200 mA but
voltage to illustrate the improvement in load protection of shorter duration than 30 ms will simply be clipped by
obtained with zener-fuse combinations. Fuse current “A” zener action and diverted from the load. Transients of very
would be selected to limit current resulting from voltage high voltage will produce larger currents and, hence, will
surges above 112 V to 90 mA, which would melt the fuse in melt the fuse more rapidly. In the limiting case where
100 ms. It is a simple matter, however, to select a fuse which transient power might eventually destroy the zener diode,
melts in 30 ms at 200 mA but is unaffected by 100 mA the fuse always melts first because of the slower thermal
currents. The zener connection allows fuse current “B” to be time constant inherent in the zener diode’s larger geometry.
selected, eliminating this design problem and providing a The curves in Figure 4 illustrate the change in zener
faster, more reliable protective circuit. If the same fuse was voltage as a function of changing current for a typical device
used without the zener diode, a supply voltage of 210 volts type.

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 illustrated in Figure 5. If a short circuit occurs in the
capacitive section of the load (represented by C) the
resulting fault current is limited by the resistive section
VZ = V1 (represented by R) to a value which may not be great enough
CHANGE, IN VZ

to melt the fuse. The fault current could be sufficient,

V2 however, to damage the supply and other components in the
load.
The problem is resolved by employing a zener diode to
V3
protect against supply surges as described in the previous
section, and by selecting a separate fuse to protect from load
faults. The load fuse in Figure 5 is chosen close to the normal
operating current. Abnormal supply surges do not affect it
LOG IZ/IZK and equipment operates reliably but with ample protection
for the supply against load changes.
Figure 4. Change in VZ for Changes in IZ
ZENER DIODES AND RECLOSING
If an actual curve for the device being used is not DISCONNECT ELEMENTS
available, the zener voltage at a specific current above or
below the test current may be approximated by equation 4. An interesting application of zener diodes as overvoltage
protectors, which offers the possibility of designing for both
Where: V = VZ + ZZT (I–IZT) (4) long and short duration surges, is shown in Figure 6.
VZ = zener voltage at test current IZT
ZZT = zener impedance at test current IZT
R RECLOSING
IZT = test current
CIRCUIT LOAD
V = zener voltage at current I
BREAKER IZ
For a given design, the maximum zener voltage to expect POWER
SUPPLY
for the higher zener current should be determined to make
sure the limits of the circuit are met. If the maximum limit
is excessive for the original device selection, the next lower
voltage rating should be used.
The previous discussion on design consideration for Figure 6. Zener Diode Reclosing Circuit Breaker
protective circuits incorporating fuses is applicable to any Protective Circuit
protective element that permanently disconnects the supply
when actuated. Rather than a fuse, a non-resetting magnetic In the event of a voltage overload exceeding a chosen
circuit breaker could have been used, and the same zener voltage, a large current will be drawn through the
reasoning would have applied. diode. The reclosing disconnect element opens after an
interval determined by its time constant, and the supply is
LOAD CURRENT SURGES disconnected. After another interval, again depending on the
In many actual problems the designer must choose a switch characteristics, the supply is reconnected and the
protective circuit to perform still another task. Not only must voltage “sampled” by the zener diode. This leads to an
the equipment be protected from the voltage surges in the “on-off” action which continues until the supply voltage
supply, but the supply itself often requires protection from drops below the predetermined limit. At no time can the load
shorts or partial shorts in the load. A direct short in the load voltage or current exceed that set by the zener. The chief
is fairly easy to handle, as the drastic current change permits advantage in this type of circuit is the elimination of fuse
the use of fuses with ratings high enough to avoid problems replacement in similar fusing circuits, while providing
with supply surges. More common is the partial short, as essentially the same load protection.

SUPPLY LOAD
R FUSE FUSE R
POWER
SUPPLY C

LOAD
Figure 5. Supply and Load with Zener Diode; Fuse Circuitry

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 VOLTS
SURGE VOLTAGE

SUPPLY OVER VOLTAGE

VOLTAGE
NORMAL OPERATING VOLTAGE

TIME
°C
BREAK TEMPERATURE
MAKE
TEMPERATURE
THERMAL
BREAKER
TEMPERATURE

TIME
AMPS

ZENER
DIODE
CURRENT

TIME

°C MAXIMUM TJ

ZENER
DIODE
JUNCTION
TEMPERATURE

TIME

Figure 7. (Typical) Voltage, Current and Temperature Waveforms

for a Thermal Breaker

It is difficult to define a set design procedure in this case, causes the thermal breaker to open sooner. In effect, the
because of the wide variety of reclosing, magnetic and zener diode rating must be high enough to ensure that
thermal circuit breakers available. Care should be taken to maximum junction temperature is not reached during the
ensure that the power dissipated in the zener diode during the longest interval that the thermal switch will be closed.
conduction time of the disconnect element does not exceed Manufacturers of thermally operated circuit breakers
its rating. As an example, assume the disconnect element publish current-time curves for their devices similar to that
was a thermal breaker switch. The waveforms for a typical shown in Figure 8. By estimating the peak supply
over-voltage situation are shown in Figure 7. overvoltage and determining the maximum overvoltage
It is apparent that the highest zener diode junction tolerated by the load, an estimation of peak zener current can
temperature is reached during the first conduction period. At be made. The maximum breaker trip time may then be read
this time the thermal breaker is cold and requires the greatest from Figure 8. (After the initial current surge, the duration
time to reach its break temperature. The breaker then cycles of “of” time is determined entirely by the breaker
thermally between the make and break temperatures as long characteristics and will vary widely with manufacture.) The
as the supply voltage is greater than the zener voltage, as zener diode junction temperature rise during conduction
shown in Figure 7. may be calculated now from the thermal time constant of the
The zener diode current and junction temperature device and the heatsink used.
variation are shown in the last two waveforms of Figure 7. Because the reclosing circuit breaker is continually
Overvoltage durations longer than the trip time of the cycling on and off, the zener current takes on the
thermal breaker do not affect the diode as the supply is characteristics of a repetitive surge, as can be seen in
disconnected. An overvoltage of much higher level simply Figure 7.

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 30 of using a zener diode to protect an ignition transistor. These
are shown in Figures 9a and 9b. In Figure 9b the transistor
is protected by a zener diode connected between base and
TRIP TIME (SECONDS)

collector and in Figure 9a, the zener is connected between

20 emitter and collector. In both cases the voltage level of the
zener must be selected carefully so that the voltage stress on
the transistor is in a region where the safe operating area is
adequate for reliable circuit operation.
10 Figure 10 illustrates “safe” and “unsafe” selection of a
zener diode for collector-base protection of a transistor in the
ignition coil circuit. It can be seen that the safe operating area
of a transistor must be known if an adequate protective zener
0
0 1 2 3 is to be selected.
CURRENT (AMPS) The zener diode must be able to take the stress of peak
Figure 8. Trip Time versus Current for pulse current necessary to clamp the voltage rise across the
Thermal Breaker transistor to a safe value. In a typical case, a 5 watt, 100 volt
zener transient suppressor diode is required to operate with
an 80 µs peak pulse current of 8 amperes when connected
between the collector-emitter of the transistor. The
TRANSISTOR OVERVOLTAGE PROTECTION waveform of this pulse current approaches a sine wave in
shape (Figure 11). The voltage rise across a typical transient
In many electronic circuits employing transistors, high
suppressor diode due to this current pulse is shown in Figure
internal voltages can be developed and, if applied to the
12. This voltage rise of approximately 8 volts indicates an
transistors, will destroy them. This situation is quite
effective zener impedance of approximately 1 ohm.
common in transistor circuits that are switching highly
However, a good share of this voltage rise is due to the
inductive loads. A prime example of this would be in
temperature coefficient and thermal time constant of the
transistorized electronic ignition systems such as shown in
zener. The temperature rise of the zener diode junction is
Figures 9a and 9b.
indicated by the voltage difference between the rise and fall
The zener diode is an important component to assure solid
of the current pulse.
state ignition system reliability. There are two basic methods

+12 V +12 V
1Ω
10 Ω 10 Ω
1/2 W
2N6031 2N5879
1N6295

560 pF 1N5374B
10 Ω 1Ω
100 W 5Ω
10 W

200 V H.V. TO H.V. TO

PAPER DIST. DIST.

MALLORY PRESTOLITE
2 µF
COIL 201
28100

(A) (B)

Figure 9. Transistor Ignition Systems with Zener

Overvoltage Surge Protection

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 TYPICAL TRANSISTOR SAFE AREA LIMIT
10
9
8

2 A/div ZENER CURRENT

7
6
IC 5
4 LOAD
LINE SAFE
3
UNSAFE
2
SAFE
1
0
0 10 20 30 40 50 60 70 80 90 100 110 120
COLLECTOR
VCE COLLECTORBASE
EMITTER TIME 10 µs/div
ZENER CLAMP
ZENER
CLAMP Figure 11. Zener Diode Current Pulse
Figure 10. Safe Zener Protection
1 A/div ZENER CURRENT

ZENER VOLTAGE 1 V/div 100 V

Figure 12. Voltage-Current Representation on

100 V Zener

In order to assure safe operation, the change in zener result in additional zener voltage rise. It is not uncommon to
junction temperature for the peak pulse conditions must be observe a 15-volt rise above the zener device voltage rating
analyzed. In making the calculation, the method described due to temperature coefficient and impedance under these
in Chapter 3 should be used, taking into account duty cycle, pulse current conditions.
pulse duration, and pulse magnitude. The zener diode should be connected as close as possible
When the zener diode is connected between the collector to the terminals of the transistor the zener is intended to
and emitter of the transistor, additional power dissipation protect. This insures that induced voltage transients, caused
will result from the clipping of the ringing voltage of the by current changes in long lead lengths, are clamped by the
ignition coil by the forward conduction of the zener diode. zener and do not appear across the transistor.
This power dissipation by the forward diode current will

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 +

Figure 13. DC-DC Converter with Surge Protecting Diodes

Another example of overvoltage protection of transistor voltmeter to measure 25 V, approximately 249 thousand
operating in an inductive load switch capacity is illustrated ohms are required in series.
in Figure 13. The DC-DC converter circuit shows a
connection from collector to emitter of two zener diodes as
+ 70K
collector overvoltage protectors. Without some type of
limiting device, large voltage spikes may appear at the 179K
collectors, due to the switching transients produced with 1N4746
25 V
normal circuit operation. When this spike exceeds the
collector breakdown rating of the transistor, transistor life is (18 VOLT
ZENER DIODE)
considerably shortened. The zener diodes shown are chosen µA
-
with zener breakdowns slightly below transistor breakdown
voltage to provide the necessary clipping action. Since the
spikes are normally of short duration (0.5 to 5 µs) and duty Figure 14. Meter Protection with Zener Diode
cycle is low, normal chassis mounting provides adequate
heatsinking. The protection provided by the addition of an 18 volt zener
is illustrated in Figure 15. With an applied voltage of
METER PROTECTION 25 volts, the 100 µAmps current in the circuit produces a
The silicon zener diode can be employed to prevent drop of 17.9 volts across the series resistance of 179
overloading sensitive meter movements used in low range thousand ohms. A further increase in voltage causes the
DC and AC voltmeters, without adversely affecting the zener diode to conduct, and the overload current is shunted
meter linearity. The zener diode has the advantage over away from the meter. Since ON Semiconductor zener diodes
thermal protective devices of instantaneous action and, of have zener voltages specified within 5 and 10%, a safe
course, will function repeatedly for an indefinite time (as design may always be made with little sacrifice in meter
compared to the reset time necessary with thermal devices). linearity by assuming the lowest breakdown voltage within
While zener protection is presently available for voltages as the tolerance. The shunting effect on the meter of the reverse
low as 2.4 volts, forward diode operation can be used for biased diode is generally negligible below breakdown
meter protection where the voltage drop is much smaller. A voltage (on the order of 0.5° full scale). For very precise
typical protective circuit is illustrated in Figure 14. Here the work, the zener diode breakdown voltage must be accurately
meter movement requires 100 µAmps for full scale known and the design equations solved for the correct
deflection and has 940 ohms resistance. For use in a resistance values.

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 200 In a system that is handling large amounts of power, it may
become impractical to employ standard zener shunt
protection because of the large current it would be required
150
METER CURRENT (µA)

to carry. The SCR crowbar technique shown in Figure 16 can

be effectively used in these situations. The zener diode is still
the transient detection component, but it is only required to
100 carry the gate current for SCR turn on, and the SCR will
WITH PROTECTIVE CIRCUIT
carry the bulk of the shunt current. Whenever the incoming
voltage exceeds the zener voltage, it avalanches, supplying
50 gate drive to the SCR which, when fired, causes a current
demand that will trip the circuit breaker. The resistors shown
0
are for current limiting so that the SCR and zener ratings are
0 50 100 150 200 not exceeded.
TOTAL CURRENT (µA) The circuit of Figure 17 is designed to disconnect the
supply in the event a specified load current is exceeded. This
Figure 15. Meter Protection with
is done by means of a series sense resistor and a compatible
Zener Diodes
zener to turn the shunt SCR on. When the voltage across the
series resistor, which is a function of the load current,
becomes sufficient to break over the zener, the SCR is fired,
ZENER DIODES USED WITH SCRS FOR
causing the circuit breaker to trip.
CIRCUIT PROTECTION
An interesting aspect of circuit protection incorporating
the reliable zener diode is the protective circuits shown in
Figures 16 and 17.

CIRCUIT
BREAKER

R1 R6
ZENER

AC R2
R5
SCR SCR

R3 R4
ZENER

Figure 16. SCR Crowbar Over-Voltage Protection Circuit for AC Circuit Operation

CIRCUIT
BREAKER

Figure 17. SCR Longterm Current Overload Protection

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 ZENER TRANSIENT SUPPRESSORS 3. Large dice are used, or special tests are imposed on the
The transient suppressor is used as a shunt element in product to guarantee higher ratings than those shown
exactly the same manner as a conventional zener. It offers in Figure 18.
the same advantages such as low insertion loss, immediate 4. The specifications may be based on a JEDEC
recovery after operation, a clamping factor approaching registration or part number of another manufacturer.
unity, protection against fast rising transients, and simple
circuitry. The primary difference is that the transient The data of Figure 18 applies for non-repetitive conditions
suppressor extends these advantages to higher power levels. and at a lead temperature of 25°C. If the duty cycle increases,
Even in the event of transients with power contents far in the peak power must be reduced as indicated by the curves
excess of the capacity of the zeners, protection is still of Figure 19. Average power must be derated as the lead or
provided the load. When overloaded to failure, the zener will ambient temperature rises above 25°C. The average power
approximate a short. The resulting heavy drain will aid in derating curve normally given on data sheets may be
opening the fuse or circuit breaker protecting the load normalized and used for this purpose.
against excess current. Thus, even if the suppressor is
100
destroyed, it still protects the load. 50 1 TO 3 W TYPES

PPK(nom), NOMINAL PEAK POWER (kW)

The design of the suppressor-fuse combination for the 20 PLASTIC DO41
required level of protection follows the techniques for 10
conventional zeners discussed earlier in this chapter. 5
1N6267 SERIES
2
TRANSIENT SUPPRESSION CHARACTERISTICS 1
Zener diodes, being nearly ideal clippers (that is, they 0.5
5 WATT TYPES
exhibit close to an infinite impedance below the clipping 0.2
level and close to a short circuit above the clipping level), are 0.1
0.05
often used to suppress transients. In this type of application, 250 mW TO 1 W TYPES
it is important to know the power capability of the zener for 0.02
GLASS DO35 & GLASS DO41
0.01
short pulse durations, since they are intolerant of excessive 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
stress. PULSE WIDTH (ms)
Some ON Semiconductor data sheets such as the ones for
Figure 18. Peak Power Ratings of
devices shown in Table 1 contain short pulse surge
Zener Diodes
capability. However, there are many data sheets that do not
contain this data and Figure 18 is presented here to
supplement this information. 1
0.7
Table 1. Transient Suppressor Diodes 0.5
0.3 PULSE WIDTH
Series Steady State
DERATING FACTOR

Numbers Power Package Description 0.2

1N4728A 1W DO-41 Double Slug 10 ms

0.1
Glass
0.07
1 ms
1N6267A 5W Case 41A Axial Lead 0.05
Plastic 0.03
100 µs
1N5333B 5W Case 102 Surmetic 40 0.02
10 µs
1N746A/957B 500 mW DO-35 Double Slug 0.01
/4370A Glass 0.1 0.2 0.5 1 2 5 10 20 50 100

1N5221B 500 mW DO-35 Double Slug D, DUTY CYCLE (%)

Glass
Figure 19. Typical Derating Factor for
Duty Cycle
Some data sheets have surge information which differs
slightly from the data shown in Figure 18. A variety of When it is necessary to use a zener close to surge ratings,
reasons exist for this: and a standard part having guaranteed surge limits is not
suitable, a special part number may be created having a surge
1. The surge data may be presented in terms of actual limit as part of the specification. Contact your nearest
surge power instead of nominal power. ON Semiconductor OEM sales office for capability, price,
2. Product improvements have occurred since the data delivery, and minimum order quantities.
sheet was published.

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 MATHEMATICAL MODEL with the zener is also effective in reducing the stress imposed
Since the power shown on the curves is not the actual by very short duration transients.
transient power measured, but is the product of the peak To illustrate use of the data, a common application will be
current measured and the nominal zener voltage measured analyzed. The transistor in Figure 20 drives a 50 mH
at the current used for voltage classification, the peak current solenoid which requires 5 amperes of current. Without some
can be calculated from: means of clamping the voltage from the inductor when the
transistor turns off, it could be destroyed.
P(PK) The means most often used to solve the problem is to
IZ(PK) = (5)
VZ(nom) connect an ordinary rectifier diode across the coil; however,
this technique may keep the current circulating through the
The peak voltage at peak current can be calculated from:
coil for too long a time. Faster switching is achieved by
VZ(PK) = FC x VZ(nom) (6) allowing the voltage to rise to a level above the supply before
being clamped. The voltage rating of the transistor is 60 V,
where FC is the clamping factor. The clamping factor is
indicating that approximately a 50 volt zener will be
approximately 1.20 for all zener diodes when operated at required.
their pulse power limits. For example, a 5 watt, 20 volt The peak current will equal the on-state transistor current
zener can be expected to show a peak voltage of 24 volts (5 amperes) and will decay exponentially as determined by
regardless of whether it is handling 450 watts for 0.1 ms the coil L/R time constant (neglecting the zener impedance).
or 50 watts for 10 ms. This occurs because the voltage is A rectangular pulse of width L/R (0.01 s) and amplitude of
a function of junction temperature and IR drop. Heating IPK (5 A) contains the same energy and may be used to select
of the junction is more severe at the longer pulse width, a zener diode. The nominal zener power rating therefore
causing a higher voltage component due to temperature must exceed (5 A × 50) = 250 watts at 10 ms and a duty cycle
of 0.01/2 = 0.5%. From Figure 19, the duty cycle factor is
which is roughly offset by the smaller IR voltage
0.62 making the single pulse power rating required equal to
component.
250/0.62 = 403 watts. From Figure 18, one of the 1N6267
For modeling purposes, an approximation of the zener series zeners has the required capability. The 1N6287 is
resistance is needed. It is obtained from: specified nominally at 47 volts and should prove
VZ(nom)(FC–1) satisfactory.
RZ(nom) = (7) Although this series has specified maximum voltage
PPK(nom) / VZ(nom)
limits, equation 7 will be used to determine the maximum
The value is approximate because both the clamping zener voltage in order to demonstrate its use.
factor and the actual resistance are a function of temperature.
47(1.20 – 1) 9.4
RZ = = = 0.9 Ω
500/47 10.64
CIRCUIT CONSIDERATIONS
It is important that as much impedance as circuit At 5 amperes, the peak voltage will be 4.5 volts above
constraints allow be placed in series with the zener diode and nominal or 51.5 volts total which is safely below the 60
the components to be protected. The result will be a lower volt transistor rating.
clipping voltage and less zener stress. A capacitor in parallel

26 Vdc
50 mH, 5 Ω

10 ms

2s

USED TO SELECT A ZENER DIODE HAVING THE PROPER

VOLTAGE AND POWER CAPABILITY TO PROTECT THE TRANSISTOR

Figure 20. Circuit Example

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 ZENER VOLTAGE SENSING CIRCUITS
AND APPLICATIONS

BASIC CONCEPTS OF VOLTAGE SENSING TRANSISTOR-ZENER SENSING CIRCUITS

Numerous electronic circuits require a signal or voltage The zener diode probably finds its greatest use in sensing
level to be sensed for circuit actuation, function control, or applications in conjunction with other semiconductor
circuit protection. The circuit may alter its mode of devices. Two basic widely used techniques are illustrated in
operation whenever an interdependent signal reaches a Figures 1a and 1b.
particular magnitude (either higher or lower than a specified In both of these circuits the output is a function of the input
value). These sensing functions may be accomplished by voltage level. As the input goes from low to high, the output
incorporating a voltage dependent device in the system will switch from either high to low (base sense circuit) or
creating a switching action that controls the overall low to high (emitter sense circuit), (see Figure 2).
operation of the circuit. The base sense circuit of Figure 1a operates as follows:
The zener diode is ideally suited for most sensing When the input voltage is low, the voltage dropped across R2
applications because of its voltage dependent is not sufficient to bias the zener diode and base emitter
characteristics. The following sections are some of the more junction into conduction, therefore, the transistor will not
common applications and techniques that utilize the zener in conduct. This causes a high voltage from collector to
a voltage sensing capacity. emitter. When the input becomes high, the zener is biased
into conduction, the transistor turns on, and the collector to
emitter voltage, which is the output, drops to a low value.
VIN

SENSING LEVEL

R2 + R1
R3 VIN = VZ + VBE(SAT)
R1 R2

TIME
VIN VIN BOTH CIRCUITS
Z1 Q1
VO1
R2 VO1
(OUTPUT OF FIGURE 1a)

(a)

TIME
Z1 VOUT BASE SENSE
R2
VO2

VIN
(OUTPUT OF FIGURE 1b)
Q1
R1
R3 VO2
TIME
(b) VOUT EMITTER SENSE

Figure 1. Basic Transistor-Zener Diode Figure 2. Outputs of Transistor-Zener Voltage

Sensing Circuits Sensing Circuits

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 The emitter sense circuit of Figure 1b operates as follows: of these devices tend to change and have mechanical contact
When the input is low the voltage drop across R3 (the output) problems. A solid state regulator that controls the charge rate
is negligible. As the input voltage increases the voltage drop by sensing the battery voltage is inherently more accurate
across R2 biases the zener into conduction and forward and reliable. A schematic of a simplified solid state voltage
biases the base-emitter junction. A large voltage drop across regulator is shown in Figure 3.
R3 (the output voltage) is equal to the product of the collector The purpose of an alternator regulator is to control the
current times the resistance, R3. The following relationships battery charging current from the alternator. The charge
indicate the basic operating conditions for the circuits in level of the battery is proportional to the battery voltage
Figure 1. level. Consequently, the regulator must monitor the battery
voltage level allowing charging current to pass when the
Circuit Output battery voltage is low. When the battery has attained the
High proper charge the charging current is switched off. In the
VOUT = VIN – ICOR3 ≅ VIN case of the solid state regulator of Figure 3, the charging
1a current is controlled by switching the alternator field current
Low
on and off with a series transistor switch, Q2. The switching
VOUT = VIN – ICR3 = VCE(sat)
action of Q2 is controlled by a voltage sensing circuit that is
identical to the base sense circuit of Figure 1a. When
Low under-charged, the zener Z1 does not conduct keeping Q1
VOUT = VIN – VZ – VCE(off) = ICOR3 off. The collector-emitter voltage of Q1 supplies a forward
1b
High bias to the base-emitter of Q2, turning it on. With Q2 turned
VOUT = VIN – VCE(sat) = ICR3 on, the alternator field is energized allowing a charging
current to be delivered to the battery. When the battery
attains a proper charge level, the zener conducts causing Q1
In addition, the basic circuits of Figure 1 can be rearranged
to turn on, and effectively shorting out the base-emitter
to provide inverse output.
junction of Q2. This short circuit cuts off Q2, turns off the
current flowing in the field coil which consequently, reduces
AUTOMOTIVE ALTERNATOR VOLTAGE
the output of the alternator. Diode D1 acts as a field
REGULATOR
suppressor preventing the build up of a high induced voltage
Electromechanical devices have been employed for many across the coil when the coil current is interrupted.
years as voltage regulators, however, the regulation setting

B+ ALTERNATOR
OUTPUT

R3

R1
Z1 Q1

R2 Q2

R4

ALTERNATOR
D1
FIELD

Figure 3. Simplified Solid State Voltage Regulator

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 In actual operation, this switching action occurs many In this configuration, the sensing circuit is composed of Z1
times each second, depending upon the current drain from and Q1 with biasing components. It is similar to the sensing
the battery. The battery charge, therefore, remains circuit shown in Figure 1b. The potentiometer R1 adjusts the
essentially constant and at the maximum value for optimum conduction point of Q1 establishing the proper charge level.
operation. When the battery has reached the desired level, Q1 begins to
A schematic of a complete alternator voltage regulator is conduct. This draws Q2 into conduction, and therefore
shown in Figure 4. shorts off Q3 which is supplying power to the alternator
It is also possible to perform the alternator regulation field. This type of regulator offers greater sensitivity with an
function with the sensing element in the emitter of the increase in cost.
control transistor as shown in Figure 5.

B+ ALTERNATOR
OUTPUT

0.05 Ω

30 Ω
1N3493
BIAS
100 Ω 2N4234 DIODE

1N961B
SENSING
ZENER
DIODE 2N5879

TO ALTERNATOR
15 Ω
0.05 µF FIELD COIL
RT* FEEDBACK 1N4001
THER 70 Ω CAPACITOR FIELD
30 Ω MISTOR SUPPRESSION
DIODE

*THE VALUE OF RT DEPENDS ON THE SLOPE OF THE VOLTAGE REGULATION

VERSUS TEMPERATURE CURVE.

Figure 4. Complete Solid State Alternator Voltage Regulator

B+ ALTERNATOR
OUTPUT

R5
D1
R3

Q2
R4

Q3
R1
Q1
R6
R2 Z1
D2 ALTERNATOR
FIELD

Figure 5. Alternator Regulator with Emitter Sensor

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 UNIJUNCTION-ZENER SENSE CIRCUITS does not exceed the Zener voltage VZ, the circuit will
Unijunction transistor oscillator circuits can be made generate output pulses. At some given point, the required Vp
GO-NO GO voltage sensitive by incorporating a zener diode for triggering will exceed VZ. Since Vp is clamped at VZ, the
clamp. The UJT operates on the criterion: under proper circuit will not oscillate. This, in essence, means the circuit
biasing conditions the emitter-base one junction will is GO as long as VIN is below a certain level, and NO GO
breakover when the emitter voltage reaches a specific value above the critical clamp point.
given by the equation: The circuit of Figure 7, is a clamped base UJT oscillator.
In this circuit VBB is clamped at a voltage VZ and the emitter
Vp = ηVBB + VD (1) tied to a voltage dividing network by a diode D1. When the
where: input voltage is low, the voltage drop across R2 is less than
Vp = peak point emitter voltage Vp. The forward biased diode holds the emitter below the
η = intrinsic stand-off ratio for the device trigger level. As the input increases, the R2 voltage drop
VBB = interbase voltage, from base two to base one approaches Vp. The diode D1 becomes reversed biased and,
VD = emitter to base one diode forward junction drop the UJT triggers. This phenomenon establishes the
operating criterion that the circuit is NO GO at a low input
Obviously, if we provide a voltage clamp in the circuit
and GO at an input higher than the clamp voltage. Therefore,
such that the conditions of equation 1 are met only with
the circuits in Figures 6 and 7 are both input voltage
restriction on the input, the circuit becomes voltage
sensitive, but have opposite input requirements for a GO
sensitive. There are two basic techniques used in clamping
condition. To illustrate the usefulness of the clamped UJT
UJT relaxation oscillators. They are shown in Figure 6 and
relaxation oscillators, the following two sections show them
Figure 7.
being used in practical applications.
The circuit in Figure 6 is that of a clamped emitter type.
As long as the input voltage VIN is low enough so that Vp

RB2
RT
VP = ηVBB + VD

VIN
VBB

C UJT
Z VE

RB1 VOUT

Figure 6. UJT Oscillator, GO — NO GO Output,

GO for Low VIN — NO GO for High VIN

R1 RT RB2

VIN
D1

UJT
R2 CT VE
RB1 Z VOUT

Figure 7. UJT — NO GO Output, NO GO for Low VIN — GO for High VIN

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BATTERY VOLTAGE SENSITIVE SCR CHARGER While operating, the oscillator will produce pulses in the
A clamped emitter unijunction sensing circuit of the type pulse transformer connected across the resistance, RGC
shown in Figure 6 makes a very good battery charger (RGC represents the gate-to-cathode resistance of the
(illustrated in Figure 8). This circuit will not operate until the controlled rectifier), at a frequency determined by the
battery to be charged is properly connected to the charger. resistance, capacitance, R.C. time delay circuit.
The battery voltage controls the charger and will dictate its Since the base-to-base voltage on the unijunction
operation. When the battery is properly charged, the charger transistor is derived from the charging battery, it will
will cease operation. increase as the battery charges. The increase in base-to-base
The battery charging current is obtained through the voltage of the unijunction transistor causes its peak point
controlled rectifier. Triggering pulses for the controlled voltage (switching voltage) to increase. These waveforms
rectifier are generated by unijunction transistor relaxation are sketched in Figure 9 (this voltage increase will tend to
oscillator (Figure 9). This oscillator is activated when the change the pulse repetition rate, but this is not important).
battery voltage is low.
A C

RECTIFIED A.C. G
SCR
VOLTAGE FROM
CHARGER +
A

R1
E B2
R2
B1 V
UJT 12 V
Z1 C1 T1
R3
-
R1 3.9K, 1/2 W C1 .25 µf UJT 2N2646
R2 1K, POT. Z1 1N753, 6.2 V T1 PR1, 30T, no. 22
R3 5.1K, 1/2 W SCR MCR3813 SEC, 45T, NO. 22
CORE: FERROX CUBE
203F181303
Figure 8. 12 Volt Battery Charger Control
VB B2
1
BATTERY BATTERY
CHARGING CHARGED

TIME R1
VC
1

UJT PEAK UJT B2

ZENER
VOLTAGE POINT VOLTAGE B1 R2
Z1
C1 T1 RGC

TIME
VR +
GC
VBATT.
SCR SCR
CONDUCTS NONCONDUCTING

TIME

Figure 9. UJT Relaxation Oscillator Operation

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 When the peak point voltage (switching voltage) of the Figure 10 shows a permanent magnet alternator regulator
unijunction transistor exceeds the breakdown voltage of the designed to regulate a 15 ampere output. The two SCRs are
Zener diode, Z1, connected across the delay circuit connected on the ac side of the bridge, and short out the
capacitor, C1, the unijunction transistor ceases to oscillate. alternator when triggered by the unijunction voltage
If the relaxation oscillator does not operate, the controlled sensitive triggering circuit. The sensing circuit is of the type
rectifier will not receive trigger pulses and will not conduct. shown in Figure 7. The shorted output does not appreciably
This indicates that the battery has attained its desired charge increase the maximum output current level.
as set by R2. A single SCR could be designed into the dc side of the
The unijunction cannot oscillate unless a voltage bridge. However, the rapid turn-off requirement of this type
somewhere between 3 volts and the cutoff setting is present of circuit at high alternator speeds makes this circuit
at the output terminals with polarity as indicated. Therefore, impractical.
the SCR cannot conduct under conditions of a short circuit, The unijunction circuit in Figure 10 will not oscillate until
an open circuit, or a reverse polarity connection to the the input voltage level reaches the voltage determined by the
battery. intrinsic standoff ratio. The adjustable voltage divider will
calibrate the circuit. The series diode in the voltage divider
ALTERNATOR REGULATOR FOR circuit will compensate for the emitter-base-one diode
PERMANENT MAGNET FIELD temperature change, consequently, temperature
In alternator circuits such as those of an outboard engine, compensation is necessary only for the zener diode
the field may be composed of a permanent magnet. This temperature changes.
increases the problem of regulating the output by limiting Due to the delay in charging the unijunction capacitor,
the control function to opening or shorting the output. when the battery is disconnected the alternator voltage will
Because of the high reactance source of most alternators, produce high stress voltage on all components before the
opening the output circuit will generally stress the bridge SCRs will be fired. The 1N971B Zener was included in the
rectifiers to a very high voltage level. It is, therefore, circuit to provide a trigger pulse to the SCRs as soon as the
apparent that the best control function would be shorting the alternator output voltage level approaches 30 volts.
output of the alternator for regulation of the charge to the
battery.

MCR 200 Ω 5K Ω 27 Ω
SEC. 1

23042
+ 1N971B
ALT.
OUT MCR
SEC. 2

23042 1N4001
200 Ω
MDA2500 T1
2N2646

0.1 µF
PRI.

1N960B
27 Ω

T1
CORE: ARNOLD no. 4T5340 D1 DD1 +
PRIMARY 125 TURNS AWG 36 BATTERY
SEC no. 1 125 TURNS AWG 36
SEC no. 2 125 TURNS AWG 36
TRIFILAR WOUND

Figure 10. Permanent Magnet Field Alternator Regulator

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 +
Z

VIN R VOUT

-
BASE CIRCUIT
VIN VOUT VIN VOUT

VZ

+ +
(LEVEL DETECTION) (MAGNITUDE REDUCTION)
TYPICAL OUTPUTS

Figure 11. Zener-Resistor Voltage Sensitive Circuit

VZ = 20 V
+
Z +

VIN = 24 V - 28 V VOLTMETER
R 10 V FULL SCALE

-
-

Figure 12. Improving Meter Resolution

ZENER-RESISTOR VOLTAGE SENSING which the meter can be read. By employing a 20 volt zener,
A simple but useful sense circuit can be made from just a one can use a 10 voltmeter instead of the 30 volt unit, thereby
Zener diode and resistor such as shown in Figure 11. utilizing 40% of the meter movement instead of 13.3% with
Whenever the applied signal exceeds the specific Zener a corresponding increase in accuracy and readability. For
voltage VZ, the difference appears across the dropping ultimate accuracy a 24 volt zener could be combined with a
resistor R. This level dependent differential voltage can be 5 voltmeter. This combination would have the disadvantage
used for level detection, magnitude reduction, wave of providing little room for voltage fluctuations, however.
shaping, etc. An illustrative application of the simple series In Figure 13, a number of sequentially higher-voltage
Zener sensor is shown in Figure 12, where the resistor drop Zener sense circuits are cascaded to actuate transistor
is monitored with a voltmeter. switches. As each goes into avalanche its respective
If, for example, the input is variable from 24 to 28 volts, switching transistor is turned on, actuating the indicator
a 30 voltmeter would normally be required. Unfortunately, light for that particular voltage level. This technique can be
a 4 volt range of values on a 30 volt scale utilizes only 13.3% expanded and modified to use the zener sensors to actuate
of the meter movement — greatly limiting the accuracy with some form of logic system.

Z1 Z2 Z3
LIGHT LIGHT LIGHT
(1) (2) (3)

INPUT OUTPUT
Q1 Q2 Q3

R1 R2 R3
RE1 RE2 RE3

Figure 13. Sequential Voltage Level Indicator

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 MISCELLANEOUS APPLICATIONS
OF ZENER TYPE DEVICES

INTRODUCTION diode, the voltage across NB windings of the timing

Many of the commonly used applications of zener diodes transformer T1 is clamped to VBE of the ON device, giving
have been illustrated in some depth in the preceding an inverter frequency of
chapters. This chapter shows how a zener diode may be used VBE x 108
in some rarer applications such as voltage translators, to f=
4BS1A1NB
provide constant current, wave shaping, frequency control
and synchronized SCR triggers. where BS1A1 is the flux capacity of T1 transformer core.
The circuits used in this chapter are not intended as The effect on output frequency of VBE variations due to
finished designs since only a few component values are changing load or temperature can be reduced by using a
given. The intent is to show some general broad ideas and zener diode in series with VBE as shown in Figure 1. For
not specific designs aimed at a narrow use. this circuit, the output frequency is given by

FREQUENCY REGULATION OF A (VBE + VZ) x 108

f=
DC TO AC INVERTER 4BS1A1NB

Zener diodes are often used in control circuits, usually to If VBE is small compared to the zener voltage VZ, good
control the magnitude of the output voltage or current. In this frequency accuracy is possible. For example, with VZ =
unusual application, however, the zener is used to control the 9.1 volts, a 40 Watt inverter using 2N3791 transistors
output frequency of a current feedback inverter. The circuit (operating from a 12 volt supply), exhibited frequency
is shown in Figure 1. regulation of ±2% with ±25% load variation.
Care should be taken not to exceed V(BR)EBO of the
T1 A non-conducting transistor, since the reverse emitter-base
NC voltage will be twice the introduced series voltage, plus VBE
of the conducting device.
Transformer T2 should not saturate at the lowest inverter
frequency.
B1
Q1 Inverter starting is facilitated by placing a resistor from
T2 point A to B1 or a capacitor from A to B2.
N6 Z1 N1
N2 LOAD
N6 + - N1
SIMPLE SQUARE WAVE GENERATOR
The zener diode is widely used in wave shaping circuits;
Q2 one of its best known applications is a simple square wave
B2
generator. In this application, the zener clips sinusoidal
waves producing a square wave such as shown in Figure 2a.
In order to generate a wave with reasonably vertical sides,
NC
the ac voltage must be considerably higher than the zener
voltage.
Figure 1. Frequency Controlled Current Clipper diodes with opposing junctions built into the
Feedback Inverter device are ideal for applications of the type shown in
Figure 2b.
The transformer T1 functions as a current transformer
providing base current IB = (NC/NB)IC. Without the zener

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 R ZENER
A.C. INPUT Z OUTPUT VOLTAGE

FORWARD
(a) Single Zener Diode Square Wave Generator DROP
VOLTAGE

R ZENER Z1
Z1 VOLTAGE
A.C. INPUT OUTPUT
Z2

ZENER Z2
VOLTAGE
(b) Opposed Zener Diodes Square Wave Generator

Figure 2. Zener Diode Square Wave Generator

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 TRANSIENT VOLTAGE SUPPRESSION
INTRODUCTION LIGHTNING
Electrical transients in the form of voltage surges have At any given time there are about 1800 thunderstorms in
always existed in electrical distribution systems, and prior to progress around the world, with lightning striking about 100
the implementation of semiconductor devices, they were of times each second. In the U.S., lightning kills about 150
minor concern. The vulnerability of semiconductors to people each year and injures another 250. In flat terrain with
lightning strikes was first studied by Bell Laboratories in an average lightning frequency, each 300 foot structure will
1961.1 A later report tried to quantify the amount of energy be hit, on average, once per year. Each 1200 foot structure,
certain semiconductors could absorb before they suffered such as a radio or TV tower, will be hit 20 times each year,
latent or catastrophic damage from electrostatic discharge.2 with strikes typically generating 600 million volts.
Despite these early warnings, industry did not begin to Each cloud-to-ground lightning flash really contains from
address the issue satisfactorily until the late 1970s. Listed three to five distinct strokes occurring at 60 ms intervals,
below are the seven major sources of overvoltage. with a peak current of some 20,000 amps for the first stroke
• Lightning and about half that for subsequent strokes. The final stroke
• Sunspots may be followed by a continuing current of around 150 amps
• Switching of Loads in Power Circuits lasting for 100 ms.
• Electrostatic Discharge The rise time of these strokes has been measured at around
• Nuclear Electromagnetic Pulses 200 nanoseconds or faster. It is easy to see that the
• Microwave Radiation combination of 20,000 amps and 200 ns calculates to a value
• Power Cross of dI/dt of 1011 amps per second! This large value means that
transient protection circuits must use RF design techniques,
Most electrical and electronic devices can be damaged by
particularly considerate of parasitic inductance and
voltage transients. The difference between them is the
capacitance of conductors.
amount of energy they can absorb before damage occurs.
While this peak energy is certainly impressive, it is really
Because many modern semiconductor devices, such as
the longer-term continuing current which carries the bulk of
small signal transistors and integrated circuits can be
the charge transferred between the cloud and ground. From
damaged by disturbances that exceed the voltage ratings at
various field measurements, a typical lightning model has
only 20 volts or so, their survivability is poor in unprotected
been constructed, as shown in Figure 1.
environments.
In many cases, as semiconductors have evolved their
ruggedness has diminished. The trend to produce smaller
and faster devices, and the advent of MOSFET and gallium 40 µs
arsenide FET technologies has led to an increased
vulnerability. High impedance inputs and small junction
sizes limit the ability of these devices to absorb energy and
to conduct large currents. It is necessary, therefore, to
supplement vulnerable electronic components with devices 60 60
specially designed to cope with these hazards. Listed below TIME (ms)
are the four primary philosophies for protecting against Flash with No Continuing Current
transients.
• Clamping, or “clipping” is a method of limiting the
amplitude of the transient.
• Shunting provides a harmless path for the transient,
usually to ground by way of an avalanche or a crowbar
mechanism.
• Interrupting opens the circuit for the duration of the 150 A
transient.
• Isolating provides a transient barrier between hostile 60 0.3 100
environments and vulnerable circuits through the use of
TIME (ms)
transformers or optoisolators.
Flash with Continuing Current
Selection of the proper protective method should be made
based upon a thorough investigation of the potential sources Figure 1. Typical Lightning Model, with and without
of the overvoltage hazard. Different applications and Continuing Current
environments present different sources of overvoltage.

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 Depending on various conditions, continuing current may Burying cables does not provide appreciable protection as
or may not be present in a lightning strike. A severe lightning the earth is almost transparent to lightning radiated fields. In
model has also been created, which gives an indication of the fact, underground wiring has a higher incidence of strikes
strength which can be expected during worst case conditions than aerial cables.3
at a point very near the strike location. Figure 2 shows this
model. Note that continuing current is present at more than SUNSPOTS
one interval, greatly exacerbating the damage which can be The sun generates electromagnetic waves which can
expected. A severe strike can be expected to ignite disrupt radio signals and increase disturbances on residential
combustible materials. and business power lines. Solar flares, which run in cycles
of 11 years (1989 was a peak year) send out electromagnetic
400 A waves which disrupt sensitive equipment.
Although not quantified, the effects of sunspot activity
should be considered. Sunspots may be the cause of
sporadic, and otherwise unexplainable problems in such
sensitive areas.
200 A
SWITCHING OF LOADS IN POWER CIRCUITS
10 60 110 160 460 520 580 640 700 860
Inductive switching transients occur when a reactive load,
TIME (ms) such as a motor or a solenoid coil, is switched off. The
Figure 2. Severe Lightning Model
rapidly collapsing magnetic field induces a voltage across
the load’s winding which can be expressed by the formula:
A direct hit by lightning is, of course, a dramatic event. In
V = –L (dI/dt)
fact, the electric field strength of a lightning strike nearby
where L is inductance in henrys and dI/dt is the rate of
may be enough to cause catastrophic or latent damage to
change of current in amps per second.
semiconductor equipment. It is a more realistic venture to try
Such transients can occur from a power failure or the
to protect equipment from these nearby strikes than to
normal opening of a switch. The energy associated with the
expect survival from a direct hit.
transient is stored within the inductance at power
With this in mind, it is important to be able to quantify the
interruption and is equal to:
induced voltage as a function of distance from the strike.
Figure 3 shows that these induced voltages can be quite high,
W = 1/2 Li2
explaining the destruction of equipment from relatively
where W is energy in joules and i is instantaneous current in
distant lightning flashes.
amps at the time of interruption.
10000
As an example, a 1.4 to 2.5 kV peak transient can be
injected into a 120 vac power line when the ignition system
INDUCED VOLTAGE IN 1 m OF WIRE (V)

of an oil furnace is fired. It has also been shown that there are
1000 transients present on these lines which can reach as high as
6 kV. In locations without transient protection devices, the
maximum transient voltage is limited to about 6 kV by the
100 insulation breakdown of the wiring.
Inductive switching transients are the silent killers of
semiconductors as they often occur with no outward
10 indication. A graphic example is the report of a large
elevator company indicating the failure of 1000 volt
rectifiers during a power interruption. In another area, power
1 interruption to a 20 HP pump motor in a remote area was
0.1 1 10
DISTANCE FROM STRIKE (km)
directly related to failure of sensitive monitoring equipment
at that same site.4
Figure 3. Voltage Induced by Nearby
Lightning Strike

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 28 Vdc The electrical waveform involved in ESD is a brief pulse,
B A
with a rise time of about 1 ns, and a duration of 100–300 µs.
WAVEFORM AT POINT A The peak voltage can be as large as 30 kV in dry weather, but
is more commonly 0.5–5.0 kV.6 The fastest rise times occur
from discharges originating at the tip of a hand-held tool,
while discharges from the finger tip and the side of the hand
are slightly slower.7 A typical human with a body
V capacitance of 150 pF, charged to 3 microcoulombs, will
develop a voltage potential of 20 kV, according to the
formula:
V=Q/C
t1 where V is voltage, Q is charge and C is capacitance. The
t2
energy delivered upon discharge is:
TIME (µs)
V = 600 V pk-pk t1 = 0.2 to 10 µs W = 1/2 CV2
No. of Repetitions = 5 to 100 t2 = 50 to 1000 µs where W is energy in joules, C is capacitance and V is
Figure 4. Switching Transient Definition for Aircraft voltage.
and Military Buses, per Boeing Document D6-16050 It is interesting to note that most microcircuits can be
After characterizing electrical overstress on aircraft destroyed by a 2500 volt pulse, but a person cannot feel a
power buses, Boeing published Document D6-16050 as static spark of less than 3500 volts!
shown in Figure 4. NUCLEAR ELECTROMAGNETIC PULSES (NEMP)
The military has developed switching transient When a nuclear weapon is detonated, a very large flux of
definitions within several specifications including: photons (gamma rays) is produced. These rays act to
DOD-STD-1399 for shipboard produce an electromagnetic field known as a nuclear
MIL-STD-704 for aircraft electromagnetic pulse or NEMP. When a nuclear detonation
MIL-STD-1275 for ground vehicles occurs above the atmosphere, a particulary intense pulse
illuminates all objects on the surface of the earth, and all
The International Electrotechnical Commission (IEC) is
objects in the lower atmosphere within line of sight of the
now promoting their specification IEC 801-4 throughout
burst. A burst 300–500 km above Kansas would illuminate
the European community. This describes an inductive
the entire continental U.S.
switching transient voltage threat having 50 ns wide spikes
A typical NEMP waveform is a pulse with a rise time of
with amplitudes from 2 kV to 4 kV occurring in 300 ms wide
about 5 ns and a duration of about 1 µs. Its peak electric field
bursts.5
is 50–100 kV/m at ground level. After such a pulse is
Besides these particular military specifications, many are
coupled into spacecraft, aircraft and ground support
application specific and functional tests exist. A supplier of
equipment, it produces a waveform as described in
transient voltage suppressor components will be expected to
MIL-STD-461C. The insidious effect of NEMP is its broad
perform to a wide variety of them.
coverage and its potential for disabling military defense
ELECTROSTATIC DISCHARGE (ESD) systems.
ESD is a widely recognized hazard during shipping and
MICROWAVE RADIATION
handling of many semiconductor devices, especially those
Microwaves can be generated with such high power that
that contain unprotected MOSFETs, semiconductors for use
they can disable electronic hardware upon which many
at microwave frequencies and very high speed logic with
military systems depend. A single pulse flux of 10–8 MJ/cm2
switching times of 2 ns or less. In response to this threat,
burns out receiver diodes, and a flux of 10–4 MJ/cm2 causes
most semiconductors are routinely shipped in containers
bit errors in unshielded computers.8 With automobiles
made of conductive material.
utilizing MPU controls in more applications, it is important
In addition to various shipping precautions, electronic
to protect against the effects of driving by a microwave
assembly line workers should be grounded, use
transmitter. Likewise, a nearby lightning strike could also
grounded-tip soldering irons, ionized air blowers and other
have detrimental effects to these systems.
techniques to prevent large voltage potentials to be
generated and possibly discharged into the semiconductors POWER CROSS
they are handling. Yet another source of electrical overstress is the accidental
Once the assembled device is in normal operation, ESD connection of signal lines, such as telephone or cable
damage can still occur. Any person shuffling his feet on a television, to an ac or dc power line. Strictly speaking, this
carpet and then touching a computer keyboard can possibly phenomenon, known as a power cross, is a continuous state,
cause a software crash or, even worse, damage the keyboard not a transient. However, the techniques for ensuring the
electronics.

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survival of signal electronics after a power cross are similar (TVS) devices. TVS devices handle high peak currents
to techniques used for protection against transient while holding peak voltage below damaging levels, but have
overvoltages. relatively low energy capability and cannot protect against
a power cross fault. The first TVS used by telephone
STANDARDIZED WAVEFORMS companies is the carbon block, but its peak let-through
Fortunately, measurements of these hazards have been voltage was too high for modern equipment using
studied and documented in several industry specifications. unprotected solid state circuitry. A number of other
For example, Bellcore Technical Advisory components fill today’s needs.
TA-TSY-000974 defines the generic measurement The power cross condition causes a problem with
waveform for any double exponential waveform, which is telephone lines. Fast acting fuses, high speed circuit
the basis for most of the specific applications norms. breakers and positive temperature coefficient thermistors
The predominant waveform for induced lightning have been successfully used to limit or interrupt current
transients, set down by Rural Electrification Administration surges exceeding a millisecond.
Document PE-60, is shown in Figure 5. This pulse test, Over the years, telecommunications switching equipment
performed at the conditions of 100 V/µs rise, 10/1000 µs, Ip has been transitioning from electromechanical relays to
= 1 kV, is one of the two most commonly specified in the integrated circuits and MOSFET technology. The newer
industry. The other is the 8/20 µs waveform, shown in equipment operates at minimal electrical currents and
Figure 6. voltages, which make it very efficient. It is therefore quite
sensitive to electrical overloads caused by lightning strikes
and other transient voltage sources, and by power crosses.
Ip Because of the deployment of new technology, both in
.9 Ip
new installations and in the refurbishment of older systems,
the need for transient protection has grown rapidly. It is
.5 Ip widely recognized that any new equipment must include
protection devices for reasons of safety, reliability and long
term economy.
.1 Ip The major telecom companies, in their never ending quest
0 1 2 3 for the elimination of electromechanical technology have
TIME, ms been looking at a number of novel methods and
implementations of protection. These methods provide for
Figure 5. Pulse Waveform (10/1000 µs)
solutions to both the primary and secondary protection
categories.
A number of studies have been conducted to determine the
lp transient environment on telephone lines. Very little has
.9 lp
been done with data lines because a typical situation does not
exist. However, information gathered from telephone line
studies can serve as a guide for data lines.
.5 lp
Past studies on telephone lines coupled with the high
current capability of arc type arrestors and the conservative
.1 lp nature of engineers seem to have produced specifications
which far exceed the real need. A recent study by Bell South
0 10 20 30
Services9 reported that the highest level of transient energy
TIME, µs
encountered was well below standards and specifications in
Figure 6. Pulse Waveform (8/20 µs) common use. Now, solid state devices perform adequately
for many applications. However the stringent specifications
TRANSIENT VOLTAGE SUPPRESSION of some regulatory agencies promote arc-type arrestors,
AND TELECOM though solid state devices would be a better choice.
TRANSIENT VOLTAGE SURGE SUPPRESSION
COMPONENTS ON DATA AND TELEPHONE LINES PRIMARY PROTECTION
Lines carrying data and telephone signals are subject to a Primary protection is necessary to protect against high
number of unwanted and potentially damaging transients voltage transients which occur in the outdoor environment.
primarily from two sources: lightning and “power crosses.” These transients include induced lightning surges and ac
A power cross is an accidental connection of a signal line to cross conditions.
a powerline. Transients from lightning can impress voltages As such, primary protection is located at the point where
well above a kilovolt on the line but are of short duration, wiring enters the building or terminal box. It is the first line
usually under a millisecond. Lightning transients are defense against outside hazards. TVS devices located where
suppressed by using Transient Voltage Surge Suppressor lines enter a building are called primary protectors.

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Protectors connected to indoor lines are referred to as
secondary protectors. Both primary and secondary P
protectors are required to provide complete equipment 0.9 P
protection. WAVEFORM IS DEFINED AS tr/td
Today, primary protection is most generally accomplished 0.5 P WHERE
through the use of surge protector modules. For telecom, tr : FRONT TIME = 1.25 (ba)
these are designed specifically for the environment and the 0.1 P = (T1T0)
standards dictated by the telecom applications. They td : DURATION = (T2T0)
a b T1 T2
typically contain a two or three element gas arrestor tube and T0 TIME
a mechanically-triggered heat coil. Some also include air
gap carbon block arrestors which break over at voltages Figure 7. Definition of Double Exponential
above about 1500 volts. Impulse Waveform
Some modules contain high speed diodes for clamp The 10/1000 µs wave approximates the worst case
response in the low nanoseconds. This provides protection waveform observed on data and telecom lines. TVS devices
until the gas tube fires, generally in about one microsecond. intended for this service are usually rated and characterized
The diodes may be connected between the tip, ring and using a 10/1000 waveform. The Bell South study revealed
ground conductors in various combinations. The 5ESS that the worst transient energy handled by primary
electronic switching system norms dictate design and protectors on lines entering a central office was equivalent
performance requirements of TVS modules in use today. to only 27 A peak of a 10/1000 wave. This level is
Test methods are spelled out in REA PE-80, a publication considerably less than that required by secondary protectors
of the Rural Electrification Administration. in most of the standards in use today. This finding is
In the U.S. alone, 58 million primary protection modules particularly significant because the Bell South service area
are sold annually, about 40 million for central offices and 18 includes Central Florida, the region experiencing the highest
million for station locations, such as building entrances. lightning activity in the U.S.
Eighty percent of these use gas tubes, 16% use air-gap The United States Federal Communications Commission
carbon blocks, and only 2% (so far) are solid state. (FCC) has defined mandatory requirements for equipment
SECONDARY PROTECTION which is to be connected to the U.S. telephone network. In
Secondary protection is necessary for the equipment some cases, U.S. equipment must meet standards developed
inputs, and as such, is located between the primary protector by the Rural Electrification Agency (REA). Many nations
and the equipment. Secondary protection is generally demand compliance to standards imposed by the
accomplished with one or more TVS components, as Consultative Committee, International Telegraph and
opposed to the modules used for primary. It is often placed Telephone (CCITT). In addition, most equipment users
on a circuit board along with other components handling demand safety certification from U.L., which has its own
other duties, such as switching. Secondary protection is standards.
applied to lines associated with long branch circuits which The FCC Standards are based on a worst case residue from
have primary protection a significant distance away, to a carbon block primary protector installed where the phone
internal data lines, and to other locations requiring line enters the building. The CCITT standard is applicable
additional local hazard-proofing. for situations lacking primary protection, other than wiring
While not as open to external transients as the primary, flashover. Companies entering the telephone equipment or
secondary can still see peak open circuit voltages in excess protector market will need to obtain and become familiar
of 1000 volts and short circuit currents of hundreds of amps. with the appropriate governing standards.
These transients may be locally generated, or they may be TRANSIENT VOLTAGE PROTECTION
residuals from the primary protectors upstream. COMPONENTS
STANDARDS GENERAL TVS CHARACTERISTICS
Transient voltage waveforms are commonly described in A number of transient voltage suppressor (TVS) devices
terms of a dual exponential wave as defined in Figure 7. The are available. Each finds use in various applications based
standard chosen for power lines is a 1.2/50 µs voltage wave upon performance and cost. All types are essentially
which causes an 8/20 µs current wave. Although the source transparent to the line until a transient occurs; however,
of the most severe transients on telecom lines is the same as some devices have significant capacitance which loads the
for power lines and lightning, the higher impedance per unit line for ac signals. A few of the these are described in
length of the telephone line stretches the waves as they Table 1.
propagate through the lines. Based upon their response to an overvoltage, TVS devices
fit into two main categories, clamps and crowbars. A clamp
conducts when its breakdown voltage is exceeded and
reverts back to an open circuit when the applied voltage

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drops below breakdown. A crowbar switches into a low where K is a constant of proportionality and s is an exponent
voltage, low impedance state when its breakover voltage is which defines the “sharpness factor” of the knee. The
exceeded and restores only when the current flowing exponent s is 1 for a resistor and varies from 5 to over 100
through it drops below a “holding” level. for the clamping devices being used in TVS applications. A
high value of s i.e., a sharp knee, is beneficial. A TVS device
CLAMP DEVICES
can be chosen whose breakdown voltage is just above the
All clamp devices exhibit the general V-I characteristic of worst case signal amplitude on the line without concern of
Figure 8. There are variations; however, some clamps are loading the line or causing excessive dissipation in the TVS.
asymmetric. In the non clamping direction, some devices As the current density in the clamp becomes high, the
such as the zener TVS exhibit the forward characteristic of incremental resistance as described by Equation 1 becomes
a diode while others exhibit a very high breakdown voltage very small in comparison to the bulk resistance of the
and are not intended to handle energy of “reverse” polarity. material. The incremental resistance is therefore ohmic in
Under normal operating conditions, clamp devices appear the high current region.
virtually as an open circuit, although a small amount of Unfortunately, a uniform terminology for all TVS devices
leakage current is usually present. With increasing voltage has not been developed; rather, the terms were developed in
a point is reached where current increases rapidly with conjunction with the appearance of each device in the
voltage as shown by the curved portion of Figure 8. The marketplace. The key characteristics normally specified
rapidly changing curved portion is called the “knee region.” define operation at voltages below the knee and at currents
Further increases in current places operation in the above the knee.
“breakdown” region. Leakage current is normally specified below the knee at
a voltage variously referred to as the stand-off voltage, peak
working voltage or rated dc voltage. Some devices are rated
in terms of an RMS voltage, if they are bidirectional. Normal
signal levels must not exceed this working voltage if the
device is to be transparent.
Breakdown voltage is normally specified at a fairly low
current, typically 1 mA, which places operation past the
I O knee region. Worst case signal levels should not exceed the
breakdown voltage to avoid the possibility of circuit
malfunction or TVS destruction.
The voltage in the high current region is called the
clamping voltage, VC. It is usually specified at the maximum
current rating for the device. To keep VC close to the
breakdown voltage, s must be high and the bulk resistance
low. A term called clamping factor, (FC) is sometimes used
0 to describe the sharpness of the breakdown characteristic.
V FC is the ratio of clamping voltage to the breakdown voltage.
Figure 8. Static Characteristics of a Clamp Device As the V-I characteristic curve of the TVS approaches a right
angle, the clamping factor approaches unity. Clamping
In the knee region the V-I characteristic of clamping
factor is not often specified, but it is useful to describe clamp
devices can be approximated by the equation:
device behavior in general terms.
I = K Vs (1)

Table 1. Comparison of TVS Components

Protection Protection Power Reliable Expected Other
Type Time Voltage Dissipation Performance Life Considerations
GAS TUBE > 1 µs 60–100 V Nil No Limited Only 50–2500 surges.
Can short power line.
MOV 10–20 ns > 300 V Nil No Degrades Fusing required. Degrades.
Voltage level too high.
AVALANCHE TVS 50 ps 3–400 V Low Yes Long Low power dissipation.
Bidirectional requires dual.
THYRISTOR TVS < 3 ns 30–400 V Nil Yes Long High capacitance.
Temperature sensitive.

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 Clamp devices generally react with high speed and as a relatively low frequency applications. In a data line or
result find applications over a wide frequency spectrum. No telecom application the turn-off delay causes a loss of
delay is associated with restoration to the off state after intelligence after the transient surge has subsided.
operation in the breakdown region. A telephone line has both ac and dc signals present.
Crowbars can be successfully used to protect telecom lines
CROWBAR DEVICES
from high current surges. They must be carefully chosen to
Crowbar TVS devices have the general characteristics ensure that the minimum holding current is safely above the
shown in Figure 9. As with clamp devices, asymmetric maximum dc current available from the lines.
crowbars are available which may show a diode forward
characteristic or a high voltage breakdown in one direction. TVS DEVICES
A description of the various types of TVS devices follows
VT in the chronological order in which they became available.
3 I2 Used appropriately, sometimes in combination, any
transient protection problem can be suitably resolved. Their
1
2 symbols are shown in Figure 10.
I1
V3O1
VT

VD V3O2
Air-Gap 2- and 3-Element Heat Coil Metal Oxide
Carbon Block Gas Tubes Switch Varistor (MOV)
Figure 9. Static Characteristics of a
Bidirectional Crowbar Device

The major difference between a crowbar and a clamp is

that, at some current in the breakdown region, the device Zener Unidirectional Bidirectional
Regulator Avalanche TVS De- Avalanche TVS Device
switches to a low voltage on-state. In the clamping region
vice
from I1 to I2, the slope of the curve may be positive as shown
by segment 1, negative (segment 2) or exhibit both
characteristics as shown by segment 3. A slightly positive
slope is more desirable than the other two curves because a
negative resistance usually causes a burst of high frequency Thyristor TVS Devices Dual Thyristor TVS Devices
oscillation which may cause malfunction in associated
circuitry. However, a number of performance and
manufacturing trade-offs affect the shape of the slope in the Figure 10. TVS Devices and Their Symbols
clamping region.
AIR GAP ARRESTORS
A crowbar TVS has an important advantage over a clamp
TVS in that it can handle much larger transient surge current The air gap is formed by a pair of metal points rigidly fixed
densities because the voltage during the surge is at a precise distance. The air ionizes at a particular voltage
considerably lower. In a telephone line application, for depending upon the gap width between the points. As the air
example, the clamping level must exceed the ring voltage ionizes breakover occurs and the ionized air provides a low
peak and will typically be in the vicinity of 300 volts during impedance conductive path between the points.
a high current surge. The on-state level of the crowbar may The breakover threshold voltage is a function of the air’s
be as low as 3 volts for some types which allows about two relative humidity; consequently, open air gaps are used
orders of magnitude increase in current density for the same mainly on high voltage power lines where precise
peak power dissipation. performance is not necessary. For more predictable
However, a crowbar TVS becomes “latched” in the behavior, air gaps sealed in glass and metal packages are also
on-state. In order to turn off its current flow the driving available.
voltage must be reduced below a critical level called the Because a finite time is required to ionize the air, the actual
holding or extinguishing level. Consequently, in any breakover voltage of the gap depends upon the rate of rise of
application where the on-state level is below the normal the transient overvoltage. Typically, an arrestor designed for
system voltage, a follow-on current occurs. In a dc circuit a 120 V ac line breaks over at 2200 volts.
crowbars will not turn off unless some means is provided to Air gaps handle high currents in the range of 10,000
interrupt the current. In an ac application crowbars will turn amperes. Unfortunately, the arc current pits the tips which
off near the zero crossing of the ac signal, but a time delay causes the breakover voltage and on-state resistance to
is associated with turn-off which limits crowbars to increase with usage.

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CARBON BLOCK ARRESTORS Key electrical specifications for this TVS type include
The carbon block arrestor, developed around the turn of breakover voltage (dc & pulse), maximum holdover
the century to protect telephone circuits, is still in place in voltage, arc voltage, and maximum surge current.
many older installations. The arrestor consists of two carbon The breakover voltage is rated at a slow rate of rise,
block electrodes separated by a 3 to 4 mil air gap. The gap 5000 V/s, essentially dc to a gas arrestor. Typical dc voltage
breaks over at a fairly high level – approximately 1 kV – and ratings range from 75 V through 300 V to provide for most
cannot be used as a sole protection element for modern communication systems protection requirements. The
telecom equipment. The voltage breakdown level is maximum pulse voltage rating is that level at which the
irregular. With use, the surface of the carbon block is burned device fires and goes into conduction when subjected to a
which increases the unit’s resistance. In addition, the burned fairly rapid rate of voltage rise, (dv/dt) usually 100 V/µs.
material forms carbon tracks between the blocks causing a Maximum rated pulse voltages typically range from 400 V
leakage current path which generates noise. Consequently, to 600 V, depending on device type.
many of the carbon blocks in service are being replaced by A typical waveform of a gas surge arrestor responding to
gas tubes and are seldom used in new installations. a high voltage pulse is shown in Figure 12. From the
waveform, it can be seen that the dv/dt of the wave is 100
SILICON CARBIDE VARISTORS
v/µs and the peak voltage (the breakover voltage) is 520 V.
The first non-linear resistor to be developed was called a
600
“varistor.” It was made from specially processed silicon
carbide and found wide use in high power, high voltage TVS

ARRESTOR VOLTAGE (VOLTS)

applications. It is not used on telecom lines because its
clamping factor is too high: s is only about 5.
400
GAS SURGE ARRESTORS
Gas surge arrestors are a sophisticated modification of the
air gap more suited to telecom circuit protection. Most often
used is the “communication” type gap which measures
200
about 3/8 inch in diameter and 1/4 inch thick. A cross section
is shown in Figure 11. They consist of a glass or ceramic
envelope filled with a low pressure inert gas with specialized
electrodes at each end. Most types contain a minute quantity
of radioactive material to stabilize breakover voltage. 0
0 1 2 3
Otherwise, breakover is sensitive to the level of ambient
light. TIME (500 ns/DIVISION)
Because of their small size and fairly wide gap, Figure 12. Voltage Waveform of Gas Surge Arrestor
capacitance is very low, only a few picofarads. When not Responding to a Surge Voltage
activated, their off-state impedance or insulation resistance Gas surge arrestors fire faster but firing voltage increases
is virtually infinite. as the transient wave fronts increase in slope as illustrated in

ÇÇÇÇÇÇÇÇÇ
ACTIVATING Figure 13. The near vertical lines represent the incident
IGNITION AID
COMPOUND transient rise time. Note that the response time is greater than

ÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇ
ÇÇÇÇ
0.1s at slow rise times but decreases to less than 0.1 µs for
risetimes of 20 kV/µs. However, the firing voltage has

ÇÇÇÇÇÇÇÇÇ
increased to greater than 1000 V for the gas tube which
breaks over at 250 Vdc.

ÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇ
ÇÇÇÇ
DISCHARGE
REGION
The driving circuit voltage must be below the holdover
voltage for the gap to extinguish after the transient voltage

ÇÇÇÇÇÇÇÇÇ
has passed. Holdover voltage levels are typically 60% to
70% of the rated dc breakdown voltage.

ÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇ
ÇÇÇÇ
ELECTRODES Arc voltage is the voltage across the device during
conduction. It is typically specified at 5 to 10 V under a low

ÇÇÇÇÇÇÇÇÇ
current condition, but can exceed 30 V under maximum
INSULATOR

ÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇ
rated pulse current.
(GLASS OR The maximum surge current rating for a 8/20 µs

ÇÇÇÇ
CERAMIC MATERIAL)
waveform is typically in the 10 kA to 20 kA range for
communication type devices. For repetitive surges with a
Figure 11. Gas Arrestor Cross Section 10/1000 wave, current ratings are typically 100 A,
comfortably above the typical exposure levels in a telephone
subscriber loop.

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 1.4

5KV/s

500 V/s
1KV/s

100 V/ µs
µ

100 V/ms
1.2

100 V/SEC
SPARKOVER VOLTAGE (kV)

1.0

470 Vdc
0.8
20KV/s

10KV/s
µ

350 Vdc
0.6

250 Vdc
0.4

150 Vdc
0.2

0
8 7 6 5 4 3 2 1 1 10
RESPONSE TIME (SECONDS)
Figure 13. Typical Response Time of a Gas Surge Arrestor

Gas tubes normally provide long life under typical semiconductor diodes. The TVS cells are built by depositing
operating conditions, however; wear-out does occur. the polycrystalline material on a metal plate to increase their
Wear-out is characterized by increased leakage current and thermal mass thereby raising energy dissipation. The cells
firing voltage. An examination of gas tubes in service for six exhibit typical diode characteristics and a non-linear reverse
to eight years revealed that 15% were firing outside of their breakdown which is useful for transient suppression. Cells
specified voltage limits.9 Because firing voltage increases can be made which are “self-healing”; that is, the damage
with use, protectors often use an air gap backup in parallel which occurs when subjecting them to excessive transient
with the gas tube. End-of-life is often specified by current is repaired with time.
manufacturers as an increase of greater than 50% of Selenium cells are still used in high power ac line
breakover or firing voltage. Other limits include a decrease protection applications because of their self-healing
in leakage resistance to less than 1 mW. characteristic; however, their high capacitance and poor
The features and limitations of gas tube surge arrestors are clamping factor (s » 8) rule them out for data or telecom line
listed below. applications.
Advantages: METAL OXIDE VARISTORS
• High current capability The metal oxide varistor (MOV) is composed of zinc
• Low capacitance oxide granules in a matrix of bismuth and other metal
• Very high off-state impedance oxides. The interface between the zinc oxide and the matrix
Disadvantages: material exhibits characteristics similar to that of a p-n
• Slow response time junction having a voltage breakdown of about 2.6 V. With
• Limited life this structure the electrical equivalent is that of groups of
• High let-through voltage diodes in parallel which are stacked in series with similar
• Open circuit failure mode parallel groups to provide the desired electrical parameters.
The taller the stack, the higher the breakdown and operating
Principally because of their high firing voltage, gas surge voltage. Larger cross-sections provide higher current
arrestors are not suitable for use as the sole element to capability. The structure of an MOV is shown in Figure 14.
protect modern equipment connected to a data or telecom
line. However, they are often part of a protection network
where they are used as the primary protector at the building MICROVARISTOR
interface with the outside world.
ZINC OXIDE
SELENIUM CELLS
INTERGRANULAR
Polycrystalline diodes formed from a combination of
selenium and iron were the forerunners of monocrystalline Figure 14. MOV Cross Section

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 MOV (27 V)
Vert: 10 V/div
Horiz: 0.5 ms/div
Transient Source Impedance: 0.55 Ω
Vpeak = 62.5 V

Figure 15. MOV Clamping Voltage Waveform

MOVs, formed from a ceramic-like material, are usually for devices most often used on power lines. Leakage current
produced in the shape of discs with most widely used MOVs behavior is similar to that of a p-n junction. It roughly
having diameters of 7 mm, 14 mm, and 20 mm. The disc doubles for every 10°C increase in temperature and also
surfaces are coated with a highly conductive metal such as shows an exponential dependence upon applied voltage. At
silver to assure uniform conduction through the cross a voltage of 80% of breakdown, leakage currents are several
sectional area of the device. After terminal attachment the microamperes at a temperature of 50°C.
parts are coated with a durable plastic material. Although the theory of MOV operation is not fully
The typical voltage spectrum of MOVs ranges from 8 V developed, behavior is similar to a bidirectional avalanche
through 1000 V for individual elements. Pulse current diode. Consequently its response time is very fast.
capability (8/20 µs) ranges from a few amperes to several Life expectancy is an important characteristic generated
thousands of amperes depending on the element’s size. The under pulse conditions. A typical example is shown in
V-I characteristic of MOVs is similar to Figure 8. Their Figure 16. The data applies to 20 mm diameter disc types
clamping factor is fairly good; s is in the vicinity of 25. having rated rms voltage from 130 V to 320 V. Lifetime
Key electrical specifications include: operating voltage, rating curves are usually given for each device family.
breakdown voltage, peak current maximum clamping 10,000
voltage, and leakage current. 5000 1
RATED PULSE CURRENT - AMPERES

2 102
The maximum operating voltage specified is chosen to be 2000 10
below the breakdown voltage by a margin sufficient to 1000
produce negligible heating under normal operating 500
conditions. Breakdown voltage is the transition point at 200
100
which a small increase in voltage results in a significant
50
increase in current producing a clamping action. Maximum
limits for breakdown voltage are typically specified at 20 INDEFINITE
1 mA with upper end limits ranging from 20% to 40% 10
106 105
greater than the minimum breakdown voltage. 5 104
Maximum peak current is a function of element area and 103
2
ranges from tens of amperes to tens of thousands of amperes. 1
20 100 1000 10,000
MOVs are typically pulse rated with an 8/20 µs waveform IMPULSE DURATION µs
since they are intended primarily for use across power lines.
The clamping characteristics of a 27 V ac rated MOV, with Figure 16. MOV Pulse Life Curve
a 4 joule maximum pulse capability is shown in Figure 15. For a single 8/20 µs pulse, the device described in Figure
The transient energy is derived from an exponentially 16 is rated at 6500 A; however, it must be derated by more
decreasing pulse having a peak amplitude of 90 V. The pulse than two orders of magnitude for large numbers of pulses.
generator source impedance is 0.55 W. Peak clamping Longer duration pulses also require further derating. For
voltage is 62.5 V while the developed current is 50 A. The example, for a 10/1000 µs duration pulse, this family of
clamping factor calculates to be 2.3. devices has a maximum pulse rating of about 100 A on a
Leakage currents are listed for MOVs intended for use in single shot basis and devices must be derated to less than
sensitive protection applications but are not normally listed 10A for long lifetimes in excess of 100,000 pulses.

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 End-of-life for an MOV is defined as the voltage
breakdown degrading beyond the limits of ± 10%. As MOVs
are pulsed, they degrade incrementally as granular
interfaces are overheated and changed to a highly
conductive state. Failure occurs in power line applications
when the breakdown voltage has degraded to the point
where the MOV attempts to clip the powerline peaks. In 17-02 41A 59-03
telecom applications, their breakdown must be above the
peaks of the impressed ac line during a ring cycle or a power
cross; otherwise an immediate catastrophic failure will
occur.
When MOVs fail catastrophically they initially fail short. 318-07 403 403A
However, if a source of high energy is present as might occur
Figure 18. Typical Insertion and Surface Mount Silicon
with a power cross, the follow-on current may cause the part
TVS Packages — Zeners and Thyristors
to rupture resulting in an open circuit.
The advantages and shortcomings of using an MOV for Key electrical parameters include maximum operating
general purpose protection in microprocessor based voltage, maximum reverse breakdown voltage, peak pulse
circuitry include the following: current, peak clamping voltage, peak pulse power, and
Advantages: leakage current.
• High current capability The normal operating or working voltage is usually called
• Broad voltage spectrum the reverse standoff voltage in specification sheets. Devices
are generally available over the range of 5 V through 250 V.
• Broad current spectrum
Standoff voltage defines the maximum peak ac or dc voltage
• Fast response which the device can handle. Standoff voltage is typically
• Short circuit failure mode 10% to 15% below minimum reverse breakdown voltage. A
Disadvantages: listing of TVS products available from ON Semiconductor
• Gradual decrease of breakdown voltage is shown in Table 2.
• High capacitance
Table 2. ON Semiconductor Zener TVS Series
The capacitance of MOVs is fairly high because a large
device is required in order to achieve a low clamping factor; PULSE POWER
RATING
consequently, they are seldom used across telecom lines. DEVICE (100/1000
VZ
ZENER TVS SERIES RANGE PULSE) PACKAGE

Zener TVS devices are constructed with large area silicon *SA5.0A-
6.8-200 500 W Axial
p-n junctions designed to operate in avalanche and handle SA170A
much higher currents than their cousins, zener voltage *P6KE6.8A -
6.8-200 600 W Axial
regulator diodes. Some manufacturers use small area mesa P6KE200A
chips with metal heatsinks to achieve high peak power *1.5KE6.8A -
6.8-250 1500 W Axial
capability. However, ON Semiconductor has determined 1.5KE250A
that large area planar die produce lower leakage current and 1SMB5.0AT3 -
clamping factor. The planar construction cross section is 6.8-200 600 W SMB
1SMB170AT3
shown in Figure 17 and several packages are shown in
P6SMB6.8AT3 -
Figure 18. P6SMB200T3
6.8-200 600 W SMB

PLASTIC PLANAR DIE SOLDER 1SMC5.0AT3 -

ENCAPSULATION 6.8-91 1500 W SMC

ÈÈ
1SMC78AT3

ÈÈ
1.5SMC6.8AT3
6.8-91 1500 W SMC
1.5SMC91AT3

ÈÈ
ÈÈ
MMBZ15VDLT1 15
ESD Protection
>15 kV
SOT-23

* Available in bidirectional configurations

Figure 17. Zener TVS Cross-Section

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 The reverse breakdown voltage is specified at a bias level 6 kW, which is four times greater than the rating at 1ms. The
at which the device begins to conduct in the avalanche mode. current handling capability is also increased roughly by this
Test current levels typically are 1 mA for diodes which same factor of four.
breakdown above 10 V and 10 mA for lower voltage
devices. Softening of the breakdown knee, that is, lower s, 100
for lower voltage p-n junction devices requires a higher test
current for accurate measurements of reverse breakdown

PP , PEAK POWER (kW)

voltage. Diodes that break down above 10 V display a very
sharp knee; s is over 100.
Peak pulse current is the maximum upper limit at which
the device is expected to survive. Silicon p-n junctions are 10
rated for constant power using a particular transient
waveform; consequently, current is a function of the peak
clamping voltage. For example, a 6.8 V device handles
about 28 times the pulse current that a 220 V device will
withstand; however, both the 6.8 V and 220 V types dissipate
1
the same peak power under the same pulse waveform 0.1µs 1µs 10µs 100µs 1 ms 10 ms
conditions. Most Zener TVS diodes are rated for 10/1000 µs tP, PULSE WIDTH
waveform pulses which are common in the telecom industry. Figure 20. Peak Pulse Power Rating
The clamping voltage waveform of a 27 V Zener TVS for a Popular Zener TVS Family
having a 1.5 joule capability is illustrated in Figure 19. Its
peak voltage is 30.2 V. The transient energy source is the To increase power capability devices are stacked in series.
same as applied to the MOV whose response is shown in For example, doubling the power capability requirement for
Figure 10. However, the current through the Zener TVS is a 100 V, 1.5 kW Zener TVS is easily done by placing two 50
over 100 A, much higher than occurs with the MOV because V devices in series. Clamping factor is not significantly
the clamping voltage is significantly lower. Despite the affected by this arrangement.
higher pulse current, the Zener displays much better Although leakage current limits are relatively high for the
clamping action; its clamping factor is 1.1. industry low voltage types (500 µA to 1000 µA), dropping
off to 5 µA or less for voltages above 10 V, the planar die in
use by ON Semiconductor exhibit considerably less leakage
60 than the specified limits of the industry types.
Capacitance for the popular 1500 W family exceeds
VC , CLAMPING VOLTAGE (VOLTS)

50 10,000 pF at zero bias for a 6.8 V part, dropping

exponentially to less than 100 pF for a 200 V device.
40 Capacitance drops exponentially with a linear increase in
bias. The capacitance of a 6.8 V device is 7000 pF, while the
30 200 V part measures under 60 pF, at their respective standoff
voltages.
20
Figure 14
Capacitance loads the signal line at high frequencies. For
high speed data transmission circuits, low capacitance is
10 achieved by placing two diodes in a series stack as shown in
Figure 21. Under normal operation the top diode (DS)
0 operates at essentially zero bias current. Since its power
dissipation requirement is small, its area can be much
smaller than that of the TVS diode (DZ) in order to provide
TIME (500 µs/DIVISION) low capacitance. The top diode normally is not intended to
Figure 19. Zener TVS Clamping Voltage Waveform be used in avalanche. Consequently if a negative voltage
Peak pulse power is the instantaneous power dissipated at exceeding the reverse rating of the stack could occur, the low
the rated pulse condition. Common peak pulse power ratings capacitance diode must be protected by another diode (DP)
are 500 W, 600 W, and 1500 W for 10/1000 µs waveforms. shown connected by dotted lines on Figure 21. The
As the pulse width decreases, the peak power capability arrangement of Figure 21 is satisfactory for situations where
increases in a logarithmic relationship. An example of a the signal on the line is always positive. When the signal is
curve depicting peak pulse power versus pulse width is ac, diode DP is replaced by another low capacitance stack,
shown in Figure 20. The graph applies to the 1.5 kW series connected in anti-parallel.
(10/1000 pulse) of TVS diodes and can be interpolated to
determine power ratings over a broad range of pulse widths.
At 50 µs, the maximum rated power shown in the curve is

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 Advantages:
• High repetitive pulse power ratings
• Low clamping factor
DS • Sub-nanosecond turn-on
DP • No wearout
• Broad voltage spectrum
DZ • Short circuit failure mode
Disadvantages:
• Low non-repetitive pulse current
• High capacitance for low voltage types
Because of their fast response and low clamping factor,
Figure 21. A Series Stack to Achieve Low silicon devices are used extensively for protecting
Capacitance with Zener TVS Diodes microprocessor based equipment from voltage surges on dc
power buses and I/O ports.
Switching speed is a prime attribute of the zener TVS.
Avalanche action occurs in picoseconds but performing tests THYRISTOR DIODES
to substantiate the theory is extremely difficult. As a The most recent addition to the TVS arsenal is the
practical matter, the device may be regarded as responding thyristor surge suppressor (TSS). The device has the low
instantaneously. Voltage overshoots which may appear on clamping factor and virtually instantaneous response
protected lines are the result of poor layout and packaging characteristic of a silicon avalanche (Zener) diode but, in
or faulty measurement techniques. addition, it switches to a low voltage on-state when
The p-n junction diode is a unidirectional device. For use sufficient avalanche current flows. Because the on-state
on ac signal lines, bidirectional devices are available which voltage is only a few volts, the TSS can handle much higher
are based upon stacking two diodes back to back. Most currents than a silicon diode TVS having the same chip area
manufacturers use monolithic NPN and PNP structures. The and breakdown voltage. Furthermore, the TSS does not
center region is made relatively wide compared to a exhibit the large overshoot voltage of the gas tube.
transistor base to minimize transistor action which can cause Thyristor TVS diodes are available with unidirectional or
increased leakage current. bidirectional characteristics. The unidirectional type
No wearout mechanism exists for properly manufactured behaves somewhat like an SCR with a Zener diode
Zener diode chips. They are normally in one of two states; connected from anode to gate. The bidirectional type
good, or shorted out from over-stress. Long-term life studies behaves similarly to a triac having a bidirectional diode
show no evidence of degradation of any electrical (Diac) from main terminal to gate.
parameters prior to failure. Failures result from stress which Packaged TSS chips are shown in Figure 18. Figure 22a
causes separation of the metal heat sink from the silicon chip shows a typical positive switching resistance bidirectional
with subsequent overheating and then failure. Like MOVs, TSS chip. Construction of the device starts with an n
silicon chips quickly fail short under steady state or long material wafer into which the p-bases and n-emitters are
duration pulses which exceed their capabilities. diffused. There are four layers from top to bottom on each
The strengths and weaknesses of Zener TVS devices are side of the chip, forming an equivalent SCR. Only half the
listed below. device conducts for a particular transient polarity.

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 Figure 22a. Chip Construction

ÈÈÈÈ
A

ÈÈÈÈ
P EMITTER
N BASE
N EMITTER

P BASE

ÈÈÈÈ
ÈÈÈÈ
MT1 MT2
K K

Figure 22b. Cross Section Figure 22c. Circuit Model Figure 22d. Circuit Symbol
of Left Side of Left Side

The “gate” does not trigger the SCR, instead, operation in of the NPN transistor drives the base of the PNP causing the
the Zener mode begins when the collector junction two devices to hold one another on. Both the p and n emitters
avalanches. Note that the p-bases pass through the flood the chip with carriers resulting in high electrical
n-emitters in a dot pattern and connect to the contact metal conductivity and surge current capability.
covering both halves of the chip. This construction When driven with high voltage ac, which occurs during a
technique provides a low resistance path for current flow power cross, positive resistance TSS devices act like a Zener
and prevents it from turning on the NPN transistor. diode until the ac voltage drives the load line through the
Therefore, at relatively low currents, the device acts like a point where regeneration occurs. Then it abruptly switches
low gain PNP transistor in breakdown. The Zener diode is to a low voltage. When the peak ac current is just below the
the collector base junction of the PNP transistor. Negative current required for breakover, the device operates mainly
resistance TSS devices are similarly constructed but start as a Zener and power dissipation is high although the current
with p-type material wafer, allowing the fabrication of a is low. When the ac current peak is well above breakover,
high-gain NPN transistor. The switchback in voltage with (>10 A), the device operates mainly as an SCR, and the low
increasing current is caused by the gain of the NPN. on-state voltage causes power dissipation to be relatively
Both device types switch on completely when the current low.
flow through the base emitter shunt resistance causes Negative resistance devices operate in a similar fashion.
enough voltage drop to turn on the emitter and begin four However, their behavior is dependent upon the “load line,”
layer action. Now the device acts like an SCR. The collector that is, the equivalent resistance which the device “sees.”
current of the PNP transistor (Figure 22c) provides the base When the load resistance is high (>1000 W) behavior is
drive for the NPN transistor. Likewise, the collector current similar to that of a positive resistance TSS in that high

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instantaneous power dissipation occurs as the load line is on-state conduction mode. The transition stage to
driven along the high voltage region of the TSS prior to conduction may have any of the slopes shown in Figure 9.
switching. The important voltages which define the thyristor
When a TSS with a negative resistance characteristic is operating characteristics are also shown in Figure 9. VD is
driven with a low “load” resistance, switching occurs when operating voltage, VC is the clamping voltage and VT is
the load line is tangent to the peak of the negative resistance on-state voltage.
curve. Thus, complete turn-on can occur at a very low On-state voltage for most devices is approximately 3 V.
current if the load resistance is low and the device has a Consequently, transient power dissipation is much lower for
“sharp” switchback characteristic. the thyristor TVS than for other TVS devices because of its
Leakage and the Zener knee voltage increase with low on-state voltage. For example, under power cross
temperature at eight percent and 0.11% per °C respectively conditions Bell South Services reported their tests showed
for 200 V positive resistance types. But the current required that the thyristor TVS devices handled short bursts of
to cause regeneration falls with temperature, causing less commercial power with far less heating than arc type surge
Zener impedance contribution to the breakover voltage, arrestors.9
resulting in a large reduction in the breakover voltage Capacitance is also a key parameter since in many cases
temperature coefficient to as little as 0.05%/°C. Negative the TSS is a replacement for gas surge arrestors which have
resistance types can show positive or negative breakover low capacitance. Values for the TSS range from 100 pF to
voltage coefficients depending on temperature and the 200 pF at zero volts, but drop to about half of these values
sharpness of the negative switchback. at a 50 Vdc bias.
The response of both positive and negative switching Holding current (IH) is defined as the current required to
resistance units to fast transients involves a race between maintain the on-state condition. Device thru-current must
their Zener and regenerative attributes. At first the device drop below IH before it will restore to the non-conducting
conducts only in the small chip area where breakdown is state. Turn-off time is usually not specified but it can be
occurring. Time is required for conduction to spread across expected to be several milliseconds in a telecom application
the chip and to establish the currents and temperatures where the dc follow-on current is just slightly below the
leading to complete turn-on. The net result is that both types holding current.
exhibit increasing breakover voltage with fast transients. The major advantages and limitations of the thyristor are:
However, this effect is very small compared to gas discharge Advantages:
tubes, being less than 25% of the breakover voltage. • Fast response
Negative resistance types are more sensitive to unwanted
• No wearout
turn-on by voltage rates (dv/dt) at peak voltages below the
• Produces no noise
avalanche value. The transient current that flows to charge
the self-capacitance of the device sets up an operating point • Short circuit failure mode
on the negative resistance slope leading to turn-on. Disadvantages:
Reduction of dv/dt capability becomes significant when the • Narrow voltage spectrum
signal voltage exceeds 80% of the avalanche value. • Non-restoring in dc circuits unless current is below IH
Complete turn-off following a transient requires the load • Turn-off delay time
line to intersect the device leakage characteristic at a point The thyristor TVS is finding wide acceptance in telecom
below the avalanche knee. During turn-off the load line must applications because its characteristics uniquely match
not meet an intermediate conducting state which can occur telecom requirements. It handles the difficult “power cross”
with a negative resistance device. Positive resistance types requirements with less stress than other TVS devices while
are free of states causing turn-off “sticking.” Both types providing the total protection needed.
have temperature sensitive holding currents that lie between
1 and 4 mA/°C. SURGE PROTECTOR MODULES
Recent product developments and published studies have TYPES OF SURGE PROTECTOR MODULES
generated much interest. Based on a study sponsored by Bell Several component technologies have been implemented
South,9 the authors concluded that these new devices offered either singly or in combination in surge protector modules
the highest level of surge protection available. and devices. The simplest surge protectors contain nothing
Key electrical parameters for the Thyristor TVS include more than a single transient voltage suppression (TVS)
operating voltage, clamping voltage, pulse current, on-state component in a larger package. Others contain two or more
voltage, capacitance, and holding current. in a series, parallel or series-parallel arrangement. Still
Operating voltage is defined as the maximum normal others contain two or more varieties of TVS elements in
voltage which the device should experience. Operating combination, providing multiple levels of protection.
voltages from 60 V to 200 V are available. Many surge protectors contain non-semiconductor
Clamping voltage is the maximum voltage level attained elements such as carbon blocks and varistors. If required,
before thyristor turn-on and subsequent transition to the

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other modes of protection components may be incorporated, UTILITY
such as circuit breakers or EMI noise filters. The power transmission and distribution equipment
Surge protector modules are one solution to the industry has an obvious need for heavy duty protection
overvoltage problem. Alternatives include: against overvoltage transients. Many utility situations
• Uninterruptible power systems (UPS), whose main require a combination of techniques to provide the necessary
duty is to provide power during a blackout, but solution to their particular problems. This industry utilizes
secondarily provide protection from surges, sags and many forms of transient suppression outside the realm of
spikes. semiconductors.
• Power line conditioners, which are designed to isolate DATACOM
equipment from raw utility power and regulated
voltages within narrow limits. Local area networks and other computer links require
protection against high energy transients originating on their
Both UPS and power line conditioners are far more data lines. In addition, transients on adjacent power lines
expensive than surge protector modules. produce electromagnetic fields that can be coupled onto
THE 6 MAJOR CATEGORIES OF unprotected signal lines. Datacom protectors have a ground
SURGE PROTECTION MODULES terminal or pigtail which must be tied to the local equipment
Plug-in ground with as short a lead as possible. Datacom protectors
Hardwired should be installed on both ends of a data link, or at all nodes
Utility in a network. This protection is in addition to the ac line
Datacom transient protection, which is served by the plug-in or
Telecom hardwired protection modules. Some datacom protector
RF and microwave modules contain multi-stage hybrid circuits, specially
tailored for specific applications, such as 4–20 mA analog
PLUG-IN MODULES current loops.
Plug-in modules come in a variety of sizes and shapes, and TELECOM
are intended for general purpose use. They permit the
protection of vulnerable electronic equipment, such as home Included here are devices used to protect central office and
computers, from overvoltage transients on the 115 vac line. station telecommunications (telecom) equipment against
These products are sold in retail outlets, computer stores and voltage surges. None of these devices are grounded through
via mail order. Most models incorporate a circuit breaker or an ac power receptacle. Those that are grounded through an
fuse, and an on/off switch with a neon indicator. The module ac power receptacle are categorized as plug-in modules. Not
may have any number of receptacles, with common models only can overvoltages cause disruptions of telecom service,
having from two to six. These products comply with UL but they can destroy the sophisticated equipment connected
1449, and are generally rated to withstand the application of to the network. Also, users or technicians working on the
multiple transients, as specified in IEEE 587. Plug-in equipment can be injured should lightning strike nearby. It
modules generally provide their protection through the use is estimated that 10 to 15 people are killed in the U.S. each
of these devices which are typically connected between line year while talking on the telephone during lightning storms.
and neutral, and between neutral and ground. For these reasons, surge protectors are used both in central
offices and in customer premises.
HARDWIRED There are three types of telecom surge protectors now in
Hardwired modules take on a wide variety of styles, service: air-gap carbon block, gas tube, and solid state. The
depending upon their designed application. They provide desire of the telecom market is to convert as many of the
protection for instrumentation, computers, automatic test non-solid state implementations into solid state as cost will
equipment, industrial controls, motor controls, and for permit.
certain telecom situations.
Many of these modules provide snubbing networks SELECTING TVS COMPONENTS
employing resistors and capacitors to produce an RC time From the foregoing discussion it should be clear that the
constant. Snubbers provide common mode and differential silicon junction avalanche diode offers more desirable
mode low-pass filtering to reduce interference from line to characteristics than any other TVS component. Its ability to
equipment, and are effective in reducing equipment clamp fast rising transients without overshoot, low clamping
generated noise from being propogated onto the line. factor, non-latching behavior, and lack of a wearout
Snubbers leak current however, and many of these modules mechanism are the overriding considerations. Its one-shot
are designed with heat sinks and require mounting to a surge capability is lower than most other TVS devices but is
chassis. The surge protection is performed in a similar normally adequate for the application. Should an unusually
manner to the plug-in modules mentioned earlier. severe event occur, it will short yet still protect the
Hardwired products, therefore, present a prime opportunity equipment.
for avalanche TVS components.

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 For example, an RS-232 data line is specified to operate Telephone and RS-422 lines are called balanced lines
with a maximum signal level of ± 25 V. Failure analysis because the signal is placed between two lines which are
studies11 have shown that the transmitters and receivers “floating” with respect to ground. A signal appears between
used on RS-232 links tolerate 40 V transients. A each signal line and ground but is rejected by the receiver;
1.5KE27CA diode will handle the maximum signal level only the difference in potential between the two signal lines
while holding the peak transient voltage to less than 40 V is recognized as the transmitted signal. This system has been
with a 40 A 10/1000 pulse which is adequate for all indoor in use for decades as a means of providing improved noise
and most outdoor data line runs. As a practical matter, few immunity, but protection from transient surge voltages is
data links use 25 V signals; 5 V is most common. more complex.
Consequently, much lower voltage silicon diodes may be A cost-effective means of protecting a balanced line is
used which will allow a corresponding increase in surge shown in Figure 23. The bridge diode arrangement allows
current capability. For example, a 10 V breakdown device protection against both positive and negative transients to be
from the same 1500 W family will clamp to under 15 V achieved, an essential requirement but the TVS devices Z1
(typically 12 V) when subjected to a 100 A pulse. and Z2 need only be unidirectional. The diodes are chosen
Telecommunications lines which must accommodate the to have low capacitance to reduce loading on the line and
ring voltage have much more severe requirements. For low turn-on impedance to avoid causing an overshoot on the
example, one specification11 from Bellcore suggests that clamped voltage level. Although a zener TVS is shown, a
leakage current be under 20 mA over the temperature range TSS is more appropriate when a telephone line having ring
from –40°C to +65°C with 265 V peak ac applied. To meet voltages is to be protected.
this specification using Zener TVS parts, devices must be
stacked. Devices which breakdown at 160 V are chosen to
accommodate tolerances and the temperature coefficient. A D1 D2
part number with a 10% tolerance on breakdown could
supply a unit which breaks down at 144 V. At –40°C
breakdown could be 133 V. The breakdown of two devices
stacked just barely exceeds the worst case ring peak of
265 V. A 1500 W unit has a surge capability of 6.5 A
(10/1000) which is too low to be satisfactory while higher
D3 D4
power units are too expensive as a rule.
Another problem which telephone line service presents to
a surge suppressor is survival during a power cross. An
avalanche diode is impractical to use because the energy Z1 Z2
delivered by a power cross will produce diode failure before
any overcurrent protective element can react.
As indicated by the Bell South studies, the thyristor TVS
is ideal for telephone line applications. Suppliers offer
unidirectional and bidirectional units which meet the FCC Figure 23. A Method of Reducing Capacitance and
impulse wave requirements as shown in Table 1. In addition, Protecting a Balanced Line
the thyristor can handle several cycles of 50/60 Hz power
before failure. The ON Semiconductor MKT1V200 series, Since transients are usually common-mode, it is important
for example, can handle 10 A for 4 cycles, which is enough that the TVS circuit operate in a balanced fashion;
time for a low current fuse or other current activated otherwise, common mode transients can cause differential
protective device to react. mode disturbances which can be devastating to the line
receiver. For example, suppose that an identical positive
APPLICATION CONSIDERATIONS common mode surge voltage appears from each
In most cases, it is not advisable to place a zener TVS line-to-ground. Diodes D2 and D4 will conduct the transients
directly across a data line because of its relatively high to Z2. However, if one of these diodes has a slower turn-on
capacitance. The arrangement previously discussed and or higher dynamic impedance than the other, the voltage
shown in Figure 21 works well for an unbalanced line such difference caused by the differing diode response appears
as RS-232. When using discrete steering diodes, they should across the signal lines. Consequently, the bridge diodes must
have low capacitance and low turn-on impedance to avoid be chosen to be as nearly identical as possible.
causing an overshoot on the clamped voltage level. Should a differential mode transient appear on the signal
Most noise and transient surge voltages occur on lines lines, it will be held to twice that of the line-to-ground
with respect to ground. A signal line such as RS-232 which clamping level. In many cases a lower clamping level is
uses ground as a signal reference is thus very vulnerable to needed which can be achieved by placing another TVS
noise and transients. It is, however, easy to protect using a across the signal lines. It must be a bidirectional low
single TVS at each end of the line.

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capacitance device. With a line-to-line TVS in the circuit resulting current flow. To insure that this occurs,
diode matching is not required. semiconductor devices use heavy gauge clips or bonding
Other schemes appearing in the literature use two wires between the chip and terminals. In addition, parts are
bidirectional TVS devices from each line-to-ground as available in plastic packages having a spring type shorting
shown in Figure 24 that of the line-to-ground voltage. To bar which shorts the terminals when the package softens at
avoid generating a differential mode signal, the TVS must the very high temperatures generated during a severe
be closely matched or a third TVS must be placed overload.
line-to-line. By using a third TVS differential mode The shorted TVS protects the equipment, but the line
transients can be held to a low level. feeding it could be destroyed if the source of energy which
shorted the TVS is from a power cross. Therefore, it is wise
TIP and necessary for a UL listing to provide a series element
such as a fuse or PTC device to either open the circuit or
restrict its value to a safe level.
T1 The design of circuit boards is critical and layout must be
done to minimize any lead or wiring inductance in series
T3 with the TVS. Significant voltage is developed in any loop
T2 subject to transients because of their high current amplitudes
and fast risetimes.
REFERENCES
RING 1. D. W. Bodle and P. A. Gresh, “Lightning Surges in
Paired Telephone Cable Facilities,” The Bell System
Figure 24. Protecting a Balanced Line with Technical Journal, Vol. 4, March 1961, pp. 547–576.
Bidirectional TSS Devices
2. D. G. Stroh, “Static Electricity Can Kill Transistors,”
The arrangement of Figure 25 offers the advantage of Electronics, Vol. 35, 1962, pp. 90–91.
lower capacitance when differential mode transient 3. J. D. Norgard and C. L. Chen, “Lightning-Induced
protection is required. If all three TSS devices have the same Transients on Buried Shielded Transmission Lines,”
capacitance (C), the line-to-line and line-to-ground IEEE Transactions on EMC, Vol. EMC28, No. 3,
capacitance of Figure 24 is 1.5C. However, the arrangement August 1986, pp. 168–171.
of Figure 25 exhibits a capacitance of only C/2. To design the
4. O. M. Clark, “Transient Voltage Suppression (TVS),”
circuit to handle the same simultaneous common mode
energy as the circuit of Figure 24, T3 must be twice as large 1989, pp. 6–7.
as T1 and T2. In this case the capacitance of T3 is doubled 5. Clark, p. 7.
which causes the line-to-ground capacitance to be 2C/3, still 6. World Information Technologies, “U. S. Electrical and
a considerable improvement over the arrangement of Electronic Surge Protection Markets,” 1989, p. 5.
Figure 24. 7. T. J. Tucker, “Spark Initiation Requirements of a
TIP Secondary Explosive,” Annals of the New York
Academy of Sciences, Vol. 152, Article I, 1968, pp.
643–653.
T1 8. H. K. Florig, “The Future Battlefield: A Blast of
Gigawatts?,” IEEE Spectrum, Vol. 25, No. 3, March
T3
1988, pp. 50–54.
T2 9. Mel Thrasher, “A Solid State Solution,” Telephony,
June 1989, pp. 48–52.
10. A. Urbieta, “Sensitivity Study to EOS/SSD of Bipolar
RING Integrated Circuits,” EOS-8, 1986.
11. M. Tetreault and F.D. Martzloff, “Characterization of
Figure 25. Preferred Method of Protecting a Disturbing Transient Waveforms on Computer Data
Balanced Line Using Bidirectional TSS Devices Communication Lines,” EMC Proceedings, Zurich,
Protectors are usually designed to be “fail safe” if their March 1985, pp. 423–428.
energy ratings are exceeded, but the definition of “fail safe” 12. F. Martzloff, “Coupling, Propagation, and Side Effects
is often dependent upon the application. The most common of Surges in an Industrial Building Wiring System,”
requirement is that the surge voltage protective element Conference Record of IEEE IAS Meeting, 1988, pp.
should fail short and remain shorted regardless of the 1467–1475.

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 IMPORTANT REGULATORY REQUIREMENTS UL943. This requirement defines a 0.5 µs/100 kHz
AND GUIDELINES waveform for ground fault and other switching applications.
GENERAL VDE 0420. Industrial remote control receivers are
DOD-STD-1399, MIL-STD-704, MIL-STD-1275, detailed, and test procedures defined.
MIL-STD-461C. These military specifications are VDE 0860/Part 1/II. This includes a description of
important, if we intend to target devices for military or 0.2/200 µs, 10kV test requirements.
commercial aviation markets. TELECOM
IEEE 587. This specification describes multiple transient CCITT IX K.17, K.20, K.15. These documents relate to
waveforms. repeaters.
UL1449. This is a compulsory test which demonstrates EIA PM-1361. This document covers requirements for
performance to criteria establishing the maximum voltage telephone terminals and data processing equipment.
that can pass through a device after clamping has taken FTZ 4391 TV1. This is a general German specification
place. It is important that we comply, and say so on our data for telecom equipment.
sheets. FCC Part 68. The Federal Communications Commission
INDUSTRIAL (FCC) requirements for communications equipment is
ANSI/IEEE C62.41. Established by the American defined. Of special note is §68.302, dealing with telecom
National Standards Institute (ANSI) and the Institute of power lines.
Electrical and Electronic Engineers (IEEE), this guideline NT/DAS/PRL/003. Telephone instrument, subscriber
tests the effectiveness of devices to typical power equipment and line requirements are documented.
disturbances. To meet the most rigorous category of this PTT 692.01. This is a general Swiss specification for
spec, a device or module must be capable of withstanding a telecom exchange equipment.
maximum repetitive surge current pulse of 3000 amps with REA PE-60. The Rural Electrification Administration
a 8/20 µs waveform. (REA) has documented the predominant waveform for
IEC TC 102 D. Requirements for remote control induced lightning transients. This test is now commonly
receivers for industrial applications are detailed in this known as the 10/1000 µs pulse test.
International Electrotechnical Commission (IEC) REA PE-80. The REA defines requirements for gas tubes
document. and similar devices for telecom applications.
IEC 255-4 and IEC TC 41. These documents describe TA-TSY-000974. This technical advisory by Bellcore
testing for static relays for industrial use. defines double exponential waveforms, which are the basis
IEC 801-1 thru -3. These are specifications for various for many telecom applications norms.
industrial control applications. UL 1459 and UL 4978. These document detail tests for
IEC 801-4. The IEC specifies transient voltage impulses standard telephone equipment and data transmission.
which occur from the switching of inductive loads. We must TA-TSY-000974. This technical advisory by Bellcore
be aware of the importance of this specification, especially defines double exponential waveforms, which are the basis
in Europe, and characterize our devices’ performance to it. for many telecom applications norms.
IEEE 472/ANSI C 37.90.1. Requirements for protective UL 1459 and UL 4978. These document detail tests for
relays, including 10/1000 nS waveform testing is described. standard telephone equipment and data transmission.

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AN784/D

Transient Power Capability

of Zener Diodes
Prepared by
Applications Engineering and
Jerry Wilhardt, Product Engineer — http://onsemi.com
Industrial and Hi-Rel Zener Diodes
APPLICATION NOTE

INTRODUCTION 1. The surge data may be presented in terms of actual surge

Because of the sensitivity of semiconductor components power instead of nominal power.
to voltage transients in excess of their ratings, circuits are 2. Product improvements have occurred since the data
often designed to inhibit voltage surges in order to protect sheet was published.
equipment from catastrophic failure. External voltage 100
transients are imposed on power lines as a result of lightning 50

P PK(NOM) , NOMINAL PEAK POWER (kW)

strikes, motors, solenoids, relays or SCR switching circuits, 20
which share the same ac source with other equipment. 10
Internal transients can be generated within a piece of 5
equipment by rectifier reverse recovery transients, 2 1N6267 SERIES
switching of loads or transformer primaries, fuse blowing, 1
solenoids, etc. The basic relation, v = L di/dt, describes most 0.5
5 WATT TYPES
equipment developed transients. 0.2 1 TO 3 W TYPES
0.1 PLASTIC DO41
ZENER DIODE CHARACTERISTICS 0.05
Zener diodes, being nearly ideal clippers (that is, they 250 mW TO 1 W TYPES
0.02
GLASS DO35 & GLASS DO41
exhibit close to an infinite impedance below the clipping 0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
level and close to a short circuit above the clipping level), are
PULSE WIDTH (ms)
often used to suppress transients. In this type of application,
Power is defined as VZ(NOM) x IZ(PK) where VZ(NOM) is the nominal
it is important to know the power capability of the zener for
zener voltage measured at the low test current used for voltage
short pulse durations, since they are intolerant of excessive classification.
stress.
Some ON Semiconductor data sheets such as the ones for Figure 1. Peak Power Ratings of Zener Diodes
devices shown in Table 1 contain short pulse surge
capability. However, there are many data sheets that do not 3. Larger dice are used, or special tests are imposed on the
contain this data and Figure 1 is presented here to product to guarantee higher ratings than those shown on
supplement this information. Figure 1.
4. The specifications may be based on a JEDEC
Table 1. Transient Suppressor Diodes registration or part number of another manufacturer.
Series Steady
The data of Figure 1 applies for non-repetitive conditions
Numbers State Power Package Description and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
1N4728 1W DO-41 Double Slug Glass
of Figure 2. Average power must be derated as the lead or
1N6267 5W Case 41A Axial Lead Plastic ambient temperature rises above 25°C. The average power
1N5333A 5W Case 17 Surmetic 40 derating curve normally given on data sheets may be
1N746/957 400 mW DO-35 Double Slug Glass
normalized and used for this purpose.
A/4371 At first glance the derating curves of Figure 2 appear to be
in error as the 10 ms pulse has a higher derating factor than
1N5221A 500 mW DO-35 Double Slug Glass
the 10 µs pulse. However, when the derating factor for a
Some data sheets have surge information which differs given pulse of Figure 2 is multiplied by the peak power value
slightly from the data shown in Figure 1. A variety of reasons of Figure 1 for the same pulse, the results follow the
exist for this: expected trend.

 Semiconductor Components Industries, LLC, 2001 402 Publication Order Number:

March, 2001 – Rev.0 AN784/D
 AN784/D

When it is necessary to use a zener close to surge ratings, CIRCUIT CONSIDERATIONS

and a standard part having guaranteed surge limits is not It is important that as much impedance as circuit
suitable, a special part number may be created having a surge constraints allow be placed in series with the zener diode and
limit as part of the specification. Contact your nearest the components to be protected. The result will be a lower
ON Semiconductor OEM sales office for capability, price, clipping voltage and less zener stress. A capacitor in parallel
delivery, and minimum order criteria. with the zener is also effective in reducing the stress imposed
by very short duration transients.
MATHEMATICAL MODEL
To illustrate use of the data, a common application will be
1
analyzed. The transistor in Figure 3 drives a 50 mH solenoid
0.7
0.5
which requires 5 amperes of current. Without some means
of clamping the voltage from the inductor when the
0.3
transistor turns off, it could be destroyed.
DERATING FACTOR

0.2
PULSE WIDTH
10 ms
0.1 26 Vdc
0.07 50 mH, 5 Ω
0.05 1 ms

0.03 10 ms
100 µs 2s
0.02
10 µs Used to select a zener diode having the proper voltage
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100 and power capability to protect the transistor.
D, DUTY CYCLE (%) Figure 3. Circuit Example

Figure 2. Typical Derating Factor for Duty Cycle The means most often used to solve the problem is to
connect an ordinary rectifier diode across the coil; however,
Since the power shown on the curves is not the actual
this technique may keep the current circulating through the
transient power measured, but is the product of the peak
coil for too long a time. Faster switching is achieved by
current measured and the nominal zener voltage measured
allowing the voltage to rise to a level above the supply before
at the current used for voltage classification, the peak current
being clamped. The voltage rating of the transistor is 60 V,
can be calculated from:
P(PK)
indicating that approximately a 50 volt zener will be
IZ(PK) = (1) required.
VZ(NOM) The peak current will equal the on-state transistor current
The peak voltage at peak current can be calculated from: (5 amperes) and will decay exponentially as determined by
the coil L/R time constant (neglecting the zener impedance).
VZ(PK) = FC × VZ(NOM) (2) A rectangular pulse of width L/R (0.01 sec) and amplitude
of IPK (5 A) contains the same energy and may be used to
where FC is the clamping factor. The clamping factor is select a zener diode. The nominal zener power rating
approximately 1.20 for all zener diodes when operated at therefore must exceed (5 A × 50) = 250 watts at 10 ms and
their pulse power limits. For example, a 5 watt, 20 volt zener a duty cycle of 0.01/2 = 0.5%. From Figure 2, the duty cycle
can be expected to show a peak voltage of 24 volts regardless factor is 0.62 making the single pulse power rating required
of whether it is handling 450 watts for 0.1 ms or 50 watts for equal to 250/0.62 = 403 watts. From Figure 1, one of the
10 ms. This occurs because the voltage is a function of 1N6267 series zeners has the required capability. The
junction temperature and IR drop. Heating of the junction is 1N6287 is specified nominally at 47 volts and should prove
more severe at the longer pulse width, causing a higher satisfactory.
voltage component due to temperature which is roughly Although this series has specified maximum voltage
offset by the smaller IR voltage component. limits, equation 3 will be used to determine the maximum
For modeling purposes, an approximation of the zener zener voltage in order to demonstrate its use.
resistance is needed. It is obtained from:
47(1.20 – 1) 9.4
VZ(NOM)(FC-1) RZ = = = 0.9Ω
RZ(NOM) = (3) 500/47 10.64
PPK(NOM)/VZ(NOM)
At 5 amperes, the peak voltage will be 4.5 volts above
The value is approximate because both the clamping nominal or 51.5 volts total which is safely below the 60 volt
factor and the actual resistance are a function of temperature. transistor rating.

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AN843/D

A Review of Transients and

Their Means of Suppression
Prepared by
Steve Cherniak
Applications Engineering http://onsemi.com

APPLICATION NOTE

INTRODUCTION di
a voltage equal to L dt . The energy (J) in the transient is equal
One problem that most, if not all electronic equipment
to 1/2Li2 and usually exists as a high power impulse for a
designers must deal with, is transient overvoltages.
relatively short time (J = Pt).
Transients in electrical circuits result from the sudden
If load 2 is shorted (Figure 1), devices parallel to it may
release of previously stored energy. Some transients may be
be destroyed. When the fuse opens and interrupts the fault
voluntary and created in the circuit due to inductive
current, the slightly inductive power supply produces a
switching, commutation voltage spikes, etc. and may be
easily suppressed since their energy content is known and transient voltage spike of V  L di with an energy content of
dt
predictable. Other transients may be created outside the J = 1/2Li2. This transient might be beyond the voltage
circuit and then coupled into it. These can be caused by limitations of the rectifiers and/or load 1. Switching out a
lightning, substation problems, or other such phenomena. high current load will have a similar effect.
These transients, unlike switching transients, are beyond the
control of the circuit designer and are more difficult to TRANSFORMER PRIMARY
identify, measure and suppress. BEING ENERGIZED
Effective transient suppression requires that the impulse If a transformer is energized at the peak of the line voltage
energy is dissipated in the added suppressor at a low enough (Figure 2), this voltage step function can couple to the stray
voltage so the capabilities of the circuit or device will not be capacitance and inductance of the secondary winding and
exceeded. generate an oscillating transient voltage whose oscillations
depend on circuit inductance and capacitance. This
REOCCURRING TRANSIENTS transient’s peak voltage can be up to twice the peak
Transients may be formed from energy stored in circuit amplitude of the normal secondary voltage.
inductance and capacitance when electrical conditions in the In addition to the above phenomena the capacitively
circuit are abruptly changed. coupled (CS) voltage spike has no direct relationship with
Switching induced transients are a good example of this; the turns ratio, so it is possible for the secondary circuit to see
dt

the change in current di in an inductor (L) will generate the peak applied primary voltage.

FUSE
+
POWER A +
SUPPLY 0
SHORT
LOAD LOAD ACROSS VAB
B 1 2 LOAD 2

-
-

Figure 1. Load Dump with Inductive Power Supply

 Semiconductor Components Industries, LLC, 2001 404 Publication Order Number:

March, 2001 – Rev.0 AN843/D
 AN843/D

+
CS

VLine
SWITCH PEAK SHOULD
BE 30% LIGHTER
A -
+
LOAD
MAY HAVE STRAY
B INDUCTANCE OR VAB
CAPACITANCE
SWITCH
VAB - CLOSED

Figure 2. Situation Where Transformer Capacitance Causes a Transient

TRANSFORMER PRIMARY Transients produced by interrupting transformers

BEING DE-ENERGIZED magnetizing current can be severe. These transients can
If the transformer is driving a high impedance load, destroy a rectifier diode or filter capacitor if a low
transients of more than ten times normal voltage can be impedance discharge path is not provided.
created at the secondary when the primary circuit of the
SWITCH “ARCING”
transformer is opened during zero-voltage crossing of the ac
line. This is due to the interruption of the transformer When a contact type switch opens and tries to interrupt
magnetizing current which causes a rapid collapse of the current in an inductive circuit, the inductance tries to keep
magnetic flux in the core. This, in turn, causes a high voltage current flowing by charging stray capacitances. (See
transient to be coupled into the transformer’s secondary Figure 4.)
winding (Figure 3).

LINE
VOLTAGE

SWITCH
MAGNETIZING
CURRENT AND
AC Im
FLUX
LINE
LOAD
SECONDARY
VOLTAGE SWITCH
OPENED

Figure 3. Typical Situation Showing Possible Transient When Interrupting

Transformer Magnetizing Current

VCap

TRANSIENT
LINE
SENSITIVE
VOLTAGE
LOAD
VLine

Figure 4. Transients Caused by Switch Opening

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This can also happen when the switch contacts bounce Vpk
open after its initial closing. When the switch is opened (or 0.9 Vpk
bounces open momentarily) the current that the inductance t = 10 µs (f = 100 kHz)
wants to keep flowing will oscillate between the stray
capacitance and the inductance. When the voltage due to the
oscillation rises at the contacts, breakdown of the contact
gap is possible, since the switch opens (or bounces open) 0.1 Vpk
relatively slowly compared to the oscillation frequency, and 0.5 µs
the distance may be small enough to permit “arcing.” The
arc will discontinue at the zero current point of the
oscillation, but as the oscillatory voltage builds up again and
the contacts move further apart, each arc will occur at a 60% OF Vpk
higher voltage until the contacts are far enough apart to
interrupt the current. Figure 5. 0.5 µs 100 kHz Ring Wave

WAVESHAPES OF SURGE VOLTAGES The oscillating portion of the waveform produces voltage
Indoor Waveshapes polarity reversal effects. Some semiconductors are sensitive
Measurements in the field, laboratory, and theoretical to polarity changes or can be damaged when forced into or
calculations indicate that the majority of surge voltages in out of conduction (i.e. reverse recovery of rectifier devices).
indoor low-voltage power systems have an oscillatory The sensitivity of some semiconductors to the timing and
waveshape. This is because the voltage surge excites the polarity of a surge is one of the reasons for selecting this
natural resonant frequency of the indoor wiring system. In oscillatory waveform to represent actual conditions.
addition to being typically oscillatory, the surges can also
Outdoor Locations
have different amplitudes and waveshapes in the various
places of the wiring system. The resonant frequency can Both oscillating and unidirectional transients have been
range from about 5 kHz to over 500 kHz. A 100 kHz recorded in outdoor environments (service entrances and
frequency is a realistic value for a typical surge voltage for other places nearby). In these locations substantial energy is
most residential and light industrial ac wire systems. still available in the transient, so the waveform used to
The waveshape shown in Figure 5 is known as an “0.5 µs model transient conditions outside buildings must contain
– 100 kHz ring wave.” This waveshape is reasonably greater energy than one used to model indoor transient
representative of indoor low-voltage (120 V – 240 V) wiring surges.
system transients based on measurements conducted by Properly selected surge suppressors have a good
several independent organizations. The waveshape is reputation of successful performance when chosen in
defined as rising from 10% to 90% of its final amplitude in conjunction with the waveforms described in Figure 6. The
0.5 µs, then decays while oscillating at 100 kHz, each peak recommended waveshape of 1.2 × 50 µs (1.2 µs is associated
being 60% of the preceding one. with the transients rise time and the 50 µs is the time it takes
The fast rise portion of the waveform can induce the for the voltage to drop to 1/2Vpk) for the open circuit voltage
effects associated with non-linear voltage distribution in and 8 × 20 µs for the short circuit current are as defined in
windings or cause dv/dt problems in semiconductors. IEEE standard 28-ANSI Standard C62.1 and can be
Shorter rise times can be found in transients but they are considered a realistic representation of an outdoor transients
lengthened as they propagate into the wiring system or waveshape.
reflected from wiring discontinuities.

V I
Vpk Ipk
0.9 Vpk 0.9 Ipk

0.5 Ipk
0.5 Vpk
0.3 Vpk
0.1 Vpk 0.1 Ipk

t1 t2 t2 × 1.25 = 8 µs
t1 × 1.67 = 1.2 µs 20 µs
50 µs

(a) Open-Circuit Voltage Waveform (b) Discharge Current Waveform

Figure 6. Unidirectional Wave Shapes

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The type of device under test determines which branch of a power distribution system and can also be caused
waveshape in Figure 6 is more appropriate. The voltage by lightning.
waveform is normally used for insulation voltage withstand
tests and the current waveform is usually used for discharge AC POWER LINE TRANSIENTS
current tests. Transients on the ac power line range from just above
normal voltage to several kV. The rate of occurrence of
RANDOM TRANSIENTS transients varies widely from one branch of a power
The source powering the circuit or system is frequently distribution system to the next, although low-level transients
the cause of transient induced problems or failures. These occur more often than high-level surges.
transients are difficult to deal with due to their nature; they Data from surge counters and other sources is the basis for
are totally random and it is difficult to define their the curves shown in Figure 7. This data was taken from
amplitude, duration and energy content. These transients are unprotected (no voltage limiting devices) circuits meaning
generally caused by switching parallel loads on the same that the transient voltage is limited only by the sparkover
distance of the wires in the distribution system.
20

HIGH EXPOSURE
10
9
8
7
6
5

4
P
E MEDIUM EXPOSURE
A 3
K

S
U 2
R
G
E

V LOW EXPOSURE
O
L 1
T 0.9
A 0.8
G 0.7
E
0.6
(kV) 0.5

0.4

0.3

0.2

0.1
0.01 0.1 1 10 100 1000
SURGES PER YEAR
Figure 7. Peak Surge Voltage versus Surges per Year*
*EIA paper, P587.1/F, May, 1979, Page 10

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The low exposure portion of the set of curves is data open circuit voltages do not change very much throughout
collected from systems with little load-switching activity the structure since the wiring does not provide much
that are located in areas of light lightning activity. attenuation. There are three categories of service locations
Medium exposure systems are in areas of frequent that can represent the majority of locations from the
lightning activity with a severe switching transient problem. electrical service entrance to the most remote wall outlet.
High exposure systems are rare systems supplied by long These are listed below. Table 1 is intended as an aid for the
overhead lines which supply installations that have high preliminary selection of surge suppression devices, since it
sparkover clearances and may be subject to reflections at is very difficult to select a specific value of source
power line ends. impedance.
When using Figure 7 it is helpful to remember that peak
transient voltages will be limited to approximately 6 kV in Category I: Outlets and circuits a “long distance” from
indoor locations due to the spacing between conductors electrical service entrance. Outlets more than 10 meters
using standard wiring practices. from Category II or more than 20 meters from Category
III (wire gauge #14 – #10)
TRANSIENT ENERGY LEVELS AND
SOURCE IMPEDANCE Category II: Major bus lines and circuits a “short distance”
The energy contained in a transient will be divided between from electrical service entrance. Bus system in industrial
the transient suppressor and the source impedance of the plants. Outlets for heavy duty appliances that are “close”
transient in a way that is determined by the two impedances. to the service entrance.
With a spark-gap type suppressor, the low impedance of the
Distribution panel devices.
Arc after breakdown forces most of the transient’s energy to
Commercial building lighting systems.
be dissipated elsewhere, e.g. in a current limiting resistor in
series with the spark-gap and/or in the transient’s source Category III. Electrical service entrance and outdoor
impedance. Voltage clamping suppressors (e.g. zeners, locations.
mov’s, rectifiers operating in the breakdown region) on the Power line between pole and electrical service entrance.
other hand absorb a large portion of the transient’s surge Power line between distribution panel and meter.
energy. So it is necessary that a realistic assumption of the Power line connection to additional near-by buildings.
transient’s source impedance be made in order to be able to Underground power lines leading to pumps, filters, etc.
select a device with an adequate surge capability.
The 100 kHz “Ring Wave” shown in Figure 5 is intended Categories I and II in Table 1 correspond to the extreme
to represent a transient’s waveshape across an open circuit. range of the “medium exposure” curve in Figure 7. The
The waveshape will change when a load is connected and the surge voltage is limited to approximately 6 kV due to the
amount of change will depend on the transient’s source sparkover spacing of indoor wiring.
impedance. The surge suppressor must be able to withstand
the current passed through it from the surge source. An The discharge currents of Category II were obtained from
assumption of too high a surge impedance (when testing the simulated lightning tests and field experience with
suppressor) will not subject the device under test to suppressor performance.
sufficient stresses, while an assumption of too low a surge The surge currents in Category I are less than in Category
impedance may subject it to an unrealistically large stress; II because of the increase in surge impedance due to the fact
there is a trade-off between the size (cost) of the suppressor that Category I is further away from the service entrance.
and the amount of protection obtained. Category III can be compared to the “High Exposure”
In a building, the transient’s source impedance increases situation in Figure 7. The limiting effect of sparkover is not
with the distance from the electrical service entrance, but available here so the transient voltage can be quite large.
Table 1. Surge Voltages and Currents Deemed to Represent the Indoor Environment Depending Upon Location
Energy (Joules) Dissipated in a
Suppressor with a Clamping Voltage of(3)
Category Waveform Surge Voltage(1) Surge Current(2) 250 V 500 V 1000 V
I 0.5 µs 100 kHz 6 kV 200 A 0.4 0.8 1.6
Ring Wave
II 0.5 µs 100 kHz 6 kV 500 A 1 2 4
Ring Wave
1.2 × 50 µs 6 kV
8 × 20 µs 3 kA 20 40 80
III 1.2 × 50 µs 10 kV or more
8 × 20 µs 10 kA or more
Notes: 1. Open Circuit voltage
Notes: 2. Discharge current of the surge (not the short circuit current of the power system)
Notes: 3. The energy a suppressor will dissipate varies in proportion with the suppressor’s clamping voltage, which can be different with different system voltages (assuming the same
Notes: 3. discharge current).

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LIGHTNING TRANSIENTS Dump” can cause the most destructive transients; it is when
There are several mechanisms in which lightning can the battery becomes disconnected from the charging system
produce surge voltages on power distribution lines. One of during high charging rates. This is not unlikely when one
them is a direct lightning strike to a primary (before the considers bad battery connections due to corrosion or other
substation) circuit. When this high current, that is injected wiring problems. Other problems can exist such as steady
into the power line, flows through ground resistance and the state overvoltages caused by regulator failure or 24 V
surge impedance of the conductors, very large transient battery jump starts. There is even the possibility of incorrect
voltages will be produced. If the lightning misses the battery connection (reverse polarity).
primary power line but hits a nearby object the lightning Capacitive and/or inductive coupling in wire harnesses as
discharge may also induce large voltage transients on the well as conductive coupling (common ground) can transmit
line. When a primary circuit surge arrester operates and these transients to the inputs and outputs of automotive
limits the primary voltage the rapid dv/dt produced will electronics.
effectively couple transients to the secondary circuit through The Society of Automotive Engineers (SAE) documented
the capacitance of the transformer (substation) windings in a table describing automotive transients (see Table 2) which
addition to those coupled into the secondary circuit by is useful when trying to provide transient protection.
normal transformer action. If lightning struck the secondary Considerable variation has been observed while gathering
circuit directly, very high currents may be involved which data on automobile transients. All automobiles have their
would exceed the capability of conventional surge electrical systems set up differently and it is not the intent of
suppressors. Lightning ground current flow resulting from this paper to suggest a protection level that is required. There
nearby direct to ground discharges can couple onto the will always be a trade-off between cost of the suppressor and
common ground impedance paths of the grounding the level of protection obtained. The concept of one master
networks also causing transients. suppressor placed on the main power lines is the most
cost-effective scheme possible since individual suppressors
AUTOMOTIVE TRANSIENTS at the various electronic devices will each have to suppress
Transients in the automotive environment can range from the largest transient that is likely to appear (Load Dump),
the noise generated by the ignition system and the various hence each individual suppressor would have to be the same
accessories (radio, power window, etc.) to the potentially size as the one master suppressor since it is unlikely for
destructive high energy transients caused by the charging several suppressors to share the transient discharge.
(alternator/regulator) system. The automotive “Load

Table 2. Typical Transients Encountered in the Automotive Environment

Length of Energy Capability Possible Frequency

Transient Cause Voltage Amplitude of Application
∞
Steady State Failed Voltage Regulator Infrequent
+18 V
∞
5 Minutes Booster starts with 24 V battery Infrequent
±24 V

Load Dump — i.e., disconnection of battery during ≥ 10 J

4.5–100 ms Infrequent
high charging rates ≤ 125 V
<1J
≤ 0.32 s Inductive Load Switching Transient Often
–300 V to +80 V

<1J
≤ 0.2 s Alternator Field Decay Each Turn-Off
–100 V to –40 V
< 0.5 J ≤ 500 Hz
Ignition Pulse
90 ms Several Times in
Disconnected Battery ≤ 75 V vehicle life
<1J
1 ms Mutual Coupling in Harness Often
≤ 200 V
< 0.001 J 3 500 Hz
15 µs Ignition Pulse Normal
3V Continuous

Accessory Noise ≤ 1.5 V 50 Hz to 10 kHz

Transceiver Feedback ≈ 20 mV R.F.

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There will, of course, be instances where a need for intergranular boundaries. These boundaries are the source of
individual suppressors at the individual accessories will be the MOV’s non-linear electrical behavior.
required, depending on the particular wiring system or MOV electrical characteristics are mainly controlled by
situation. the physical dimensions of the polycrystalline structure
since conduction occurs between the zinc oxide grains and
TRANSIENT SUPPRESSOR TYPES the intergranular boundaries which are distributed
Carbon Block Spark Gap throughout the bulk of the device.
This is the oldest and most commonly used transient The MOV polycrystalline body is usually formed into the
suppressor in power distribution and telecommunication shape of a disc. The energy rating is determined by the
systems. The device consists of two carbon block electrodes device’s volume, voltage rating by its thickness, and current
separated by an air gap, usually 3 to 4 mils apart. One handling capability by its area. Since the energy dissipated
electrode is connected to the system ground and the other to in the device is spread throughout its entire metal oxide
the signal cable conductor. When a transient over-voltage volume, MOV’s are well suited for single shot high power
appears, its energy is dissipated in the arc that forms between transient suppression applications where good clamping
the two electrodes, a resistor in series with the gap, and also capability is not required.
in the transient’s source impedance, which depends on The major disadvantages with using MOV’s are that they
conductor length, material and other parameters. can only dissipate relatively small amounts of average
The carbon block gap is a fairly inexpensive suppressor power and are not suitable for many repetitive applications.
but it has some serious problems. One is that it has a Another drawback with MOV’s is that their voltage
relatively short service life and the other is that there are clamping capability is not as good as zeners, and is
large variations in its arcing voltage. This is the major insufficient in many applications.
problem since a nominal 3 mil gap will arc anywhere from Perhaps the major difficulty with MOV’s is that they have
300 to 1000 volts. This arcing voltage variation limits its use a limited life time even when used below their maximum
mainly to primary transient suppression with more accurate ratings. For example, a particular MOV with a peak current
suppressors to keep transient voltages below an acceptable handling capability of 1000 A has a lifetime of about 1 surge
level. at 1000 Apk, 100 surges at 100 Apk and approximately 1000
surges at 65 Apk.
Gas Tubes
The gas tube is another common transient suppressor, TRANSIENT SUPPRESSION
especially in telecommunication systems. It is made of two USING ZENERS
metallic conductors usually separated by 10 to 15 mils Zener diodes exhibit a very high impedance below the
encapsulated in a glass envelope which is filled with several zener voltage (VZ), and a very low impedance above VZ.
gases at low pressure. Gas tubes have a higher current Because of these excellent clipping characteristics, the zener
carrying capability and longer life than carbon block gaps. diode is often used to suppress transients. Zeners are
The possibility of seal leakage and the resultant of loss intolerant of excessive stress so it is important to know the
protection has limited the use of these devices. power handling capability for short pulse durations.
Selenium Rectifiers
Most zeners handle less than their rated power during
normal applications and are designed to operate most
Selenium transient suppressors are selenium rectifiers
effectively at this low level. Zener transient suppressors
used in the reverse breakdown mode to clamp voltage
such as the ON Semiconductor 1N6267 Mosorb series are
transients. Some of these devices have self-healing
designed to take large, short duration power pulses.
properties which allows the device to survive energy
This is accomplished by enlarging the chip and the
discharges greater than their maximum capability for a
effective junction area to withstand the high energy surges.
limited number of surges. Selenium rectifiers do not have
The package size is usually kept as small as possible to
the voltage clamping capability of zener diodes. This is
provide space efficiency in the circuit layout, and since the
causing their usage to become more and more limited.
package does not differ greatly from other standard zener
METAL OXIDE VARISTORS (MOV’S) packages, the steady state power dissipation does not differ
An MOV is a non-linear resistor which is voltage greatly.
dependent and has electrical characteristics similar to Some data sheets contain information on short pulse surge
back-to-back zener diodes. As its name implies it is made up capability. When this information is not available for ON
of metal oxides, mostly zinc oxide with other oxides added Semiconductor devices, Figure 8 can be used. This data
to control electrical characteristics. MOV characteristics are applies for non-repetitive conditions with a lead temperature
compared to back-to-back zeners in Photos 2 through 7. of 25°C.
When constructing MOV’s the metal oxides are sintered It is necessary to determine the pulse width and peak
at high temperatures to produce a polycrystalline structure power of the transient being suppressed when using
of conductive zinc oxide separated by highly resistive Figure 8. This can be done by taking whatever waveform

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the transient is and approximating it with a rectangular pulse Eqtn 1: VZ(pK) = FC (VZ(nom))
with the same peak power. For example, an exponential
Unless otherwise specified FC is approximately 1.20 for
discharge with a 1 ms time constant can be approximated by
zener diodes when operated at their pulse power limits.
a rectangular pulse 1 ms wide that has the same peak power
For example, a 5 watt, 20 volt zener can be expected to
as the transient. This would be a better approximation than
show a peak voltage of 24 volts regardless of whether it is
a rectangular pulse 10 ms wide with a correspondingly lower
handling 450 watts for 0.1 ms or 50 watts for 10 ms. (See
amplitude. This is because the heating effects of different
Figure 8.)
pulse width lengths affect the power handling capability, as
This occurs because the zener voltage is a function of both
can be seen by Figure 8. This also represents a conservative
junction temperature and IR drop. Longer pulse widths
approach because the exponential discharge will contain ≈
cause a greater junction temperature rise than short ones; the
1/2 the energy of a rectangular pulse with the same pulse
increase in junction temperature slightly increases the zener
width and amplitude.
voltage. This increase in zener voltage due to heating is
100 roughly offset by the fact that longer pulse widths of
P PK(NOM) , NOMINAL PEAK POWER (kW)

50 identical energy content have lower peak currents. This

20 results in a lower IR drop (zener voltage drop) keeping the
10 clamping factor relatively constant with various pulse
5 widths of identical energy content.
2 1N6267 SERIES An approximation of zener impedance is also helpful in
1 the design of transient protection circuits. The value of
0.5
5 WATT TYPES
RZ(nom) (Eqtn 2) is approximate because both the clamping
0.2 1 TO 3 W TYPES factor and the actual resistance is a function of temperature.
0.1 PLASTIC DO41
0.05 V2Z(nom) (FC –1)
250 mW TO 1 W TYPES Eqtn 2: RZ(nom) =
0.02 PpK(nom)
GLASS DO35 & GLASS DO41
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 VZ(nom) = Nominal Zener Voltage
PULSE WIDTH (ms) PpK(nom) = Found from Figure 8 when device type and
Figure 8. Peak Power Ratings of Zener Diodes pulse width are known. For example, from Figure 8 a
1N6267 zener suppressor has a PpK(nom) of 1.5 kW at a
When used in repetitive applications, the peak power must pulse width of 1 ms.
be reduced as indicated by the curves of Figure 9. Average As seen from equation 2, zeners with a larger PpK(nom)
power must be derated as the lead or ambient temperature capability will have a lower RZ(nom).
exceeds 25°C. The power derating curve normally given on
data sheets can be normalized and used for this purpose. ZENER versus MOV TRADEOFFS
1 The clamping characteristics of Zeners and MOV’s are
0.7 best compared by measuring their voltages under transient
0.5 conditions. Photos 1 through 9 are the result of an
0.3 experiment that was done to compare the clamping
DERATING FACTOR

0.2 characteristics of a Zener (ON Semiconductor 1N6281,

PULSE WIDTH approximately 1.5J capability) with those of an MOV (G.E.
10 ms V27ZA4, 4J capability); both are 27 V devices.
0.1
0.07 Photo 1 shows the pulse generator output voltage. This
0.05 1 ms generator synthesizes a transient pulse that is characteristic
0.03 of those that may appear in the real world.
100 µs Photos 2 and 3 are clamping voltages of the MOV and
0.02
10 µs
Zener, respectively with a surge source impedance of 500 Ω.
0.01 Photos 4 and 5 are the clamping voltages with a surge
0.1 0.2 0.5 1 2 5 10 20 50
source impedance of 50 Ω
.
D, DUTY CYCLE (%)
Photos 6 and 7 simulate a condition where the surge
Figure 9. Typical Derating Factor for Duty Cycle source impedance is 5 Ω
.
Photos 8 and 9 show a surge source impedance of 0.55 Ω,
The peak zener voltage during the peak current of the which is at the limits of the Zener suppressor’s capability.
transient being suppressed can be related to the nominal
zener voltage (Eqtn 1) by the clamping factor (FC).

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PHOTO 1
Open Circuit Transient Pulse
10 Vert: 20 V/div
09 Horiz: 0.5 ms/div
0 Vpeak = 90 V

1
00
%

PHOTO 2
10 MOV (27 V)
09 Vert: 10 V/div
0 Horiz: 0.5 ms/div
Transient Source Impedance: 500 Ω
Vpeak = 39.9 V

1
00
%

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PHOTO 3
Zener (27 V)
10
Vert: 10 V/div
09
0 Horiz: 0.5 ms/div
Transient Source Impedance: 500 Ω
Vpeak = 27 V

1
00
%

PHOTO 4
10
MOV (27 V)
09
Vert: 10 V/div
0
Horiz: 0.5 ms/div
Transient Source Impedance: 50 Ω
Vpeak = 44.7 V

1
00
%

PHOTO 5
10 Zener (27 V)
09 Vert: 10 V/div
0 Horiz: 0.5 ms/div
Transient Source Impedance: 50 Ω
Vpeak = 27 V

1
00
%

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PHOTO 6
10 MOV (27 V)
09 Vert: 10 V/div
0 Horiz: 0.5 ms/div
Transient Source Impedance: 5 Ω
Vpeak = 52 V

1
00
%

10 PHOTO 7
09 Zener (27 V)
0 Vert: 10 V/div
Horiz: 0.5 ms/div
Transient Source Impedance: 5 Ω
Vpeak = 28 V

1
00
%

PHOTO 8
MOV (27 V)
Vert: 10 V/div
Horiz: 0.5 ms/div
Transient Source Impedance: 0.55 Ω
Vpeak = 62.5 V

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PHOTO 9
Zener (27 V)
Vert: 10 V/div
Horiz: 0.5 ms/div
Transient Source Impedance: 0.55 Ω
Vpeak: 30.2 V
Peak Power: Approx 2000 Wpeak
(The limit of this device’s capability)

As can be seen by the photographs, the Zener suppressor be placed as close to the load as possible to minimize
has significantly better voltage clamping characteristics overshoot due to wiring (or any inductive) effect. (See
than the MOV even though that particular Zener has less Figure 11b.)
than one-fourth the energy capability of the MOV it was
compared with. However, the energy rating can be
misleading because it is based on the clamp voltage times the
A A
surge current, and when using an MOV, the high impedance
OR
results in a fairly high clamp voltage. The major tradeoff
B B
with using a zener type suppressor is its cost versus power
handling capability, but since it would take an “oversized”
MOV to clamp voltages (suppress transients) as well as the
zener, the MOV begins to lose its cost advantage. Figure 10. Zener Arrangement for
If a transient should come along that exceeds the Bidirectional Clamping

ÎÎÎ
capabilities of the particular Zener, or MOV, suppressor that

ÎÎÎ
was chosen, the load will still be protected, since they both
fail short. Zin
The theoretical reaction time for Zeners is in the
picosecond range, but this is slowed down somewhat with
LOAD VL
lead and package inductance. The 1N6267 Mosorb series of
transient suppressors have a typical response time of less Vin
than one nanosecond. For very fast rising transients it is
important to minimize external inductances (due to wiring,
etc.) which will minimize overshoot. Figure 11a. Using Zener to Protect Load
Connecting Zeners in a back-to-back arrangement will Against Transients
enable bidirectional voltage clamping characteristics. (See
Figure 10.)
If Zeners A and B are the same voltage, a transient of TRANSIENT
either polarity will be clamped at approximately that voltage INPUT
since one Zener will be in reverse bias mode while the other
will be in the forward bias mode. When clamping low PEAK VOLTAGE
voltage it may be necessary to consider the forward drop of ZENER DUE TO OVERSHOOT
the forward biased Zener. VOLTAGE
The typical protection circuit is shown in Figure 11a. In
almost every application, the transient suppression device is
placed in parallel with the load, or component to be
protected. Since the main purpose of the circuit is to clamp Figure 11b. Overshoot Due to Inductive Effect
the voltage appearing across the load, the suppressor should

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Zener capacitance prior to breakdown is quite small (for These transients may be generated by normal circuit
example, the 1N6281 27 Volt Mosorb has a typical operations such as inductive switching circuits, energizing
capacitance of 800 pF). Capacitance this small is desirable and deenergizing transformer primaries, etc. They do not
in the off-state since it will not attenuate wide-band signals. present much of a problem since their energy content,
When the Zener is in the breakdown mode of operation duration and effect may easily be obtained and dealt with.
(e.g. when suppressing a transient) its effective capacitance Random transients found on power lines, or lightning
increases drastically from what it was in the off-state. This transients, present a greater threat to electronic components
makes the Zener ideal for parallel protection schemes since, since there is no way to be sure when or how severe they will
during transient suppression, its large effective capacitance be. General guidelines were discussed to aid the circuit
will tend to hold the voltage across the protected element designer in deciding what size (capability and cost)
constant; while in the off-state (normal conditions, no suppressor to choose for a certain level of protection. There
transient present), its low off-state capacitance will not will always be a tradeoff between suppressor price and
attenuate high frequency signals. protection obtained.
Input impedance (Zin) always exists due to wiring and Several different suppression devices were discussed with
transient source impedance, but Zin should be increased as emphasis on Zeners and MOV’s, since these are the most
much as possible with an external resistor, if circuit popular devices to use in most applications.
constraints allow. This will minimize Zener stress.
REFERENCES
CONCLUSION 1. GE Transient Voltage Suppression Manual, 2nd
The reliable use of semiconductor devices requires that edition.
the circuit designer consider the possibility of transient
overvoltages destroying these transient-sensitive 2. ON Semiconductor Zener Diode Manual.
components.

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 DESIGN CONSIDERATIONS AND PERFORMANCE
OF ON SEMICONDUCTOR TEMPERATURE-COMPENSATED
ZENER (REFERENCE) DIODES

Prepared by
Zener Diode Engineering
and
Ronald N. Racino
Reliability and Quality Assurance

INTRODUCTION 6.4

This application note defines ON Semiconductor

temperature-compensated zener (reference) diodes, 6.2 6.2 - VOLT REFERENCE DIODE
explains the device characteristics, describes electrical (COMBINATION OF ZENER
AND FORWARD DICE)
testing, and discusses the advanced concepts of device
reliability and quality assurance. It is a valuable aid to those 6
who contemplate designing circuits requiring the use of
these devices.
5.8
Zener diodes fall into three general classifications:
ZENER DIE
Regulator diodes, reference diodes and transient voltage
(REFERENCED TO IZT = 7.5 mA)
DIODE VOLTAGE DROP (V)
suppressors. Regulator diodes are normally employed in
5.6
power supplies where a nearly constant dc output voltage is
required despite relatively large changes in input voltage or
load resistance. Such devices are available with a wide range 5.4
of voltage and power ratings, making them suitable for a
wide variety of electronic equipments.
Regulator diodes, however, have one limitation: They are 0.8
temperature-sensitive. Therefore, in applications in which
the output voltage must remain within narrow limits during
input-voltage, load-current, and temperature changes, a 0.6
temperature-compensated regulator diode, called a FORWARDBIASED COMPENSATING DIE
reference diode, is required.
0.4
The reference diode is made possible by taking advantage
of the differing thermal characteristics of forward- and
reverse-biased silicon p-n junctions. A forward-biased
0.2
junction has a negative temperature coefficient of
approximately 2 mV/°C, while reverse-biased junctions
have positive temperature coefficients ranging from about 0
2 mV/°C at 5.5 V to 6 mV/°C at 10 V. Therefore it is -75 -50 -25 0 +25 +50 +75 +100
possible, by judicious combination of forward- and TEMPERATURE (°C)
reverse-biased junctions, to fabricate a device with a very Figure 1. Temperature Compensation
low overall temperature coefficient (Figure 1). of a 6.2 Volt Reference Diode (1N821 Series)
The principle of temperature compensation is further
illustrated in Figure 2, which shows the voltage-current
characteristics at two temperature points (25 and 100°C) for temperature range defined by these points is not necessarily
both a forward- and a reverse-biased junction. The diagram the same for both junctions, thus the temperature
shows that, at the specified test current (IZT), the absolute compensation may not be linear over the entire range.
value of voltage change (∆V) for the temperature change Figure 2 also indicates that the voltage changes of the two
between 25 and 100°C is the same for both junctions. junctions are equal and opposite only at the specified test
Therefore, the total voltage across the combination of these current. For any other value of current, the temperature
two junctions is also the same at these temperature points, compensation may not be complete.
since one ∆V is negative and the other is positive. However,
the rate of voltage change with temperature over the

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 DIRECTION OF CURRENT FLOW 2. Voltage-Temperature Stability. The temperature
stability of zener voltage is sometimes expressed by means
of the temperature coefficient. This parameter is usually
defined as the percent voltage change across the device per
PACKAGE degree centigrade. This method of indicating voltage
+ 25°C
OUTLINE stability accurately reflects the voltage deviation at the test
+∆V temperature extremes but not necessarily at other points
I 100°C VR within the specified temperature range. This fact is due to
I
25°C variations in the rate of voltage change with temperature for
IZT IZT
VF - the forward- and reverse-biased dice of the reference diode.
-∆V 100°C
Therefore, the temperature coefficient is given in
ON Semiconductor data sheets only as a quick reference,
for designers who are accustomed to this method of
FORWARDBIASED REVERSEBIASED specification.
PN JUNCTION ZENER JUNCTION
A more meaningful way of defining temperature stability
is the “box method.” This method, used by
Figure 2. Temperature Compensation of ON Semiconductor, guarantees that the zener voltage will
P-N Junctions
not vary by more than a specified amount over a specified
temperature range at the indicated test current, as verified by
IMPORTANT ELECTRICAL CHARACTERISTICS
tests at several temperatures within this range.
OF REFERENCE DIODES
Some devices are accurately compensated over a wide
The three most important characteristics of reference temperature range (–55°C to 100°C), others over a narrower
diodes are 1) reference voltage, 2) voltage-temperature range (0 to 75°C). The wide-range devices are, as a rule,
stability, and 3) voltage-time stability. more expensive. Therefore, it would be economically
1. Reference Voltage. This characteristic is defined as the wasteful for the designer to specify devices with a
voltage drop measured across the diode when the specified temperature range much wider than actually required for the
test current passes through it in the zener direction. It is also specific device application.
called the zener voltage (VZ, Figure 3). On the data sheets, During actual production of reference diodes, it is difficult
the reference voltage is given as a nominal voltage for each to predict the compensation accuracy. In the interest of
family of reference diodes. maximum economy, it is common practice to test all devices
The nominal voltages are normally specified to a coming off the production line, and to divide the production
tolerance of ±5%, but devices with tighter tolerances, such lot into groups, each with a specified maximum ∆VZ. Each
as ±2% and ±1%, are available on special order. group, then, is given a different device type number.

0.3

0.2
I F (mA)

0.1

VR (V)
-6 -4 -2
IZ 2 4 6 8 10 12 14 16
VZ
VF (V)

-0.1
I R (mA)

-0.2

-0.3

Figure 3. Typical Voltage – Current Characteristic of Reference Diodes

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 On the data sheet, the voltage-temperature characteristics The reason that the device reference voltage may change
of the most widely used device types are illustrated in a in either the negative or positive direction is that after
graph similar to the one shown in Figure 4. The particular assembly, some of the devices within a lot may be
production line represented in this figure produces 6.2 volt overcompensated while others may be undercompensated.
devices, but the line yields five different device type In any design, the “worst-case” condition must be
numbers (1N821 through 1N829), each with a different considered. Therefore, in the above example, it can be
temperature coefficient. The 1N829, for example, has a assumed that the maximum voltage change will not exceed
maximum voltage change of less than 5 mV over a 31 mV.
temperature range of –55 to +100°C, while the 1N821 may It should be understood, however, that the above
have a voltage change of up to 96 mV over the same calculations give the maximum possible voltage change for
temperature range. the device type, and by no means the actual voltage change
for the individual unit.
100
3. Voltage-Time Stability. The voltage-time stability of
IZT = 7.5 mA 1N821,A
a reference diode is defined by the voltage change during
75 operating time at the standard test current (IZT) and test
∆VZ , MAXIMUM VOLTAGE CHANGE (mV)

temperature (TA). In general, the voltage stability of a

50 ∆VZ = +31 mV 1N823,A reference diode is better than 100 ppm per 1000 hours of
operation.
1N825,A
10
(Referenced to -55°C)

25 -55°C +100°C
1N827,A
9
0 1N829,A +25°C
1N827,A I Z , ZENER CURRENT (mA) 8
IZT
-25 7.5
1N825,A 7

-50 ∆VZ = -31 mV

1N823,A 6
+100°C +25°C
-75 5
-55°C
1N821,A
-100 4
-55 0 50 100 -75 -50 -25 0 25 50
∆VZ, MAXIMUM VOLTAGE CHANGE (mV)
In the past, design data and characteristic curves on data sheets for (Referenced to IZT = 7.5 mA)
reference diodes have been somewhat limited: The devices have
been characterized principally at the recommended operating point. Figure 5. Current Dependence of Zener Voltage
ON Semiconductor has introduced a data sheet, providing device at Various Temperatures
data previously not available, and showing limit curves that permit (1N821 Series)
worst-case circuit design without the need for associated tests re-
quired in conjunction with the conventional data sheets.

Figure 4. Temperature Dependence THE EFFECT OF CURRENT VARIATION ON

of Zener Voltage (1N821 Series) ZENER VOLTAGE
The nominal zener voltage of a reference diode is
Graphs such as these permit the selection of the specified at a particular value of current, called the zener test
lowest-cost device that meets a particular requirement. They current (IZT). All measurements of voltage change with
also permit the designer to determine the maximum voltage temperature are referenced to this test current. If the
change of a particular reference diode for a relatively small operating current is varied, all these specifications will
change in temperature. This is done by drawing vertical lines change.
from the desired temperature points at the abscissa of the The effect of current variation on zener voltage, at various
graph to intersect with each the positive- and negative-going temperatures, is graphically illustrated on the 1N821 data
curves of the particular device of interest. Horizontal lines sheet as “Zener Current versus Maximum Voltage Change.”
are then drawn from these intersects to the ordinate of the A typical example of such a graph is shown for the 1N821
graph. The difference between the intersections of these series in Figure 5. The voltage change shown is due entirely
horizontal lines with the ordinate yields the maximum to the impedance of the device at the fixed temperature. It
voltage change over the temperature increment. For does not reflect the change in reference voltage due to the
example, for the 1N821, a change in ambient temperature change in temperature since each curve is referenced to IZT
from 0 to 50°C results in a voltage change of no more than = 7.5 mA at the indicated temperature. As shown, the
about ±31 mV.

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greatest voltage change occurs at the highest temperature OTHER CHARACTERISTICS
represented in the diagram. (See “Dynamic Impedance” In addition to the three major characteristics discussed
under the next section). earlier, the following parameters and ratings of reference
Figure 5 shows that, at 25°C, a change in zener current diodes may be considered in some applications.
from 4 to 10 mA causes a voltage shift of about 90 mV.
Comparing this value with the voltage-change example in Power Dissipation
Figure 4 (31 mV), it is apparent that, in general, a greater
The maximum dc power dissipation indicates the power
voltage variation may be due to current fluctuations than to
level which, if exceeded, may result in the destruction of the
temperature change. Therefore, good current regulation of
device. Normally a device will be operated near the
the source should be a major consideration when using
specified test current for which the data-sheet specifications
reference diodes in critical applications.
are applicable. This test current is usually much below the
It is not essential, however, that a reference diode be
current level associated with the maximum power
operated at the specified test current. The new
dissipation.
voltage-temperature characteristics for a change in current
can be obtained by superimposing the data of Figure 5 on Dynamic Impedance
that of Figure 4. A new set of characteristics, at a test current
of 4 mA, is shown for the 1N823 in Figure 6, together with Zener impedance may be construed as composed of a
the original characteristics at 7.5 mA. current-dependent resistance shunted by a
voltage-dependent capacitance. Figure 7 indicates the
typical variations of dynamic zener impedance (ZZ) with
current and temperature for the 1N821 reference diode
+100 series. These diagrams are given in the 1N821 data sheet. As
∆ VZ (mV) (REFERENCED TO -55° C)

shown, the zener impedance decreases with current but

+50 increases with ambient temperature.
7.5 mA
0
1000
Z Z , MAXIMUM ZENER IMPEDANCE (OHMS)

800
600
-50 400
200
4 mA
-100 100
80
60
-150 40
20 100°C
-55°C
-200 10
-50 0 50 100 8
6
TEMPERATURE (°C) 4
2
Figure 6. Voltage Change with Temperature 25°C
1
for 1N823 at Two Different Current Levels 1 2 4 6 8 10 20 40 60 80 100
IZ, ZENER CURRENT (mA)
From these characteristics, it is evident that the voltage
change with temperature for the new curves is different from Figure 7. Variation of Zener Impedance
that for the original ones. It is also apparent that if the test With Current and Temperature (1N821 Series)
current varies between 7.5 and 4 mA, the voltage changes
would lie along the dashed lines belonging to the given The impedance of a reference diode is normally specified
temperature points. This clearly shows the need for a at the test current (IZT). It is determined by measuring the ac
well-regulated current source. voltage drop across the device when a 60 Hz ac current with
It should be noted, however, that even when a an rms value equal to 10% of the dc zener current is
well-regulated current supply is available, other factors superimposed on the zener current (IZT). Figure 8 shows the
might influence the current flowing through a reference block diagram of a circuit used for testing zener impedance.
diode. For example, to minimize the effects of
temperature-sensitive passive elements in the load circuit on
current regulation, it is desirable that the load in parallel with
the reference diode have an impedance much higher than the
dynamic impedance of the reference diode.

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 DC POWER SIGNAL
1k 1k 0.1µF
SUPPLY GENERATOR
A
88i8.8
HP
712A
8888

600 88i8.8
HP
650A
8888

READ
(A) 10M METER
DUMMY
SET
E1 LOAD
S1 100pF AC
E1-E2 READ VTVM
Rx= Rx=Zz
E2 E2
SET (B) 88i8.8
HP
400H
8888

R2
1 DC
VTVM

88i8.8
HP
412A
8888

Figure 8. Block Diagram of Test Circuit for Measuring Dynamic Zener Impedance

ELECTRICAL TESTING device design and process development stages to establish

All devices are tested electrically as a last step in the a firm foundation for a comprehensive reliability program.
manufacturing process. The design is then evaluated by thorough reliability testing,
The subsequent final test procedures represent an and the results are supplied to the Design Engineering
automated and accurate method of electrically classifying department. This closed-loop feedback procedure provides
reference diodes. First, an electrical test is performed on all valuable information necessary to improve important design
devices to insure the correct voltage-breakdown and features such as electrical instability due to surface effects,
stability characteristics. Next, the breakdown voltage and mechanical strength, and uniformly low thermal resistance
dynamic impedance are measured. Finally, the devices are between the die and ambient environment.
placed in an automatic data acquisition system that Process Control
automatically cycles them through the complete There are more than 2000 variables that must be kept
temperature range specified. The actual voltage under control to fabricate a reliable reference diode. The
measurements at the various temperature points are retained in-process quality control group controls most of these
in the system computer memory until completion of the full variables. It places a strict controls on all aspects of
temperature excursion. The computer then calculates the manufacturing from materials procurement to the finished
changes in voltage for each device at each test temperature product. Included in this broad spectrum of controls are:
and classifies all units on test into the proper category. The • Materials Control. All materials purchased or
system provides a printed readout for every device, fabricated in-plant are checked against rigid specifications.
including the voltage changes to five digits during A quality check on vendors’ products is kept up to date to
temperature cycling, and the corresponding EIA type insure that only materials of a proven quality level will be
number, as well as the data referring to test conditions such purchased.
as device position, lot number, and date. • In-Process Inspection and Control. Numerous on-line
inspection stations maintain a statistical process control
DEVICE RELIABILITY AND
program on specific manufacturing processes. If any of
QUALITY ASSURANCE
these processes are found to be out of control, the discrepant
Insuring a very low failure rate requires maximum material is diverted from the normal production flow and the
performance in all areas effecting device reliability: Device cognizant design engineer notified. Corrective action is
design, manufacturing processes, quality control, and initiated to remedy the cause of the discrepancy.
reliability testing. ON Semiconductor’s basic reliability
Reliability Testing
concept is based on the belief that reference diode reliability
is a complex yet controllable function of all these variables. The Reliability Engineering group evaluates all new
Under this “total reliability” concept, ON Semiconductor products and gives final conclusions and recommendations
can mass-produce high-reliability reference diodes. to the device design engineer. The Reliability Engineering
The reliability of a reference diode fundamentally group also performs independent testing of all products and
depends upon the device design, regardless of the degree of includes, as part of this testing program,
effort put into device screening and circuit designing. step-stress-to-failure testing to determine the maximum
Therefore, reliability measures must be incorporated at the capabilities of the product.

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 SOME STRAIGHT TALK ABOUT MOSORBS
TRANSIENT VOLTAGE SUPPRESSORS

INTRODUCTION IMPORTANT SPECIFICATIONS FOR

Distinction is sometimes made between devices MOSORB PROTECTIVE DEVICES
trademarked Mosorb (by ON Semiconductor Inc.), and Typically, a Mosorb suppressor is used in parallel with the
standard zener/avalanche diodes used for reference, components or circuits being protected (Figure 1), in order
low-level regulation and low-level protection purposes. It to shunt the destructive energy spike, or surge, around the
must be emphasized from the beginning that Mosorb more sensitive components. It does this by avalanching at its
devices are, in fact, zener diodes. The basic semiconductor “breakdown” level, ideally representing an infinite
technology and processing are identical. The primary impedance at voltages below its rated breakdown voltage,
difference is in the applications for which they are designed. and essentially zero impedance at voltages above this level.
Mosorb devices are intended specifically for transient In the more practical case, there are three voltage
protection purposes and are designed, therefore, with a large specifications of significance, as shown in Figure 1a.
effective junction area that provides high pulse power
a) VRWM is the maximum reverse stand-off voltage at
capability while minimizing the total silicon use. Thus,
Mosorb pulse power ratings begin at 500 watts – well in which the Mosorb is cut off and its impedance is at its
excess of low power conventional zener diodes which in highest value – that is, the current through the device is
many cases do not even include pulse power ratings among essentially the leakage current of a back-biased diode.
their specifications. b) V(BR) is the breakdown voltage – a voltage at which the
MOVs, like Mosorbs, do have the pulse power
device is entering the avalanche region, as indicated by
capabilities for transient suppression. They are metal oxide
varistors (not semiconductors) that exhibit bidirectional a slight (specified) rise in current beyond the leakage
avalanche characteristics, similar to those of back-to-back current.
connected zeners. The main attributes of such devices are c) VRSM is the maximum reverse voltage (clamping
low manufacturing cost, the ability to absorb high energy voltage) which is defined and specified in conjunction
surges (up to 600 joules) and symmetrical bidirectional
with the maximum reverse surge current so as not to
“breakdown” characteristics. Major disadvantages are: high
clamping factor, an internal wear-out mechanism and an exceed the maximum peak power rating at a pulse
absence of low-end voltage capability. These limitations width (tp) of 1 ms (industry std time for measuring
restrict the use of MOVs primarily to the protection of surge capability).
insensitive electronic components against high energy
transients in application above 20 volts, whereas, Mosorbs
are best suited for precise protection of sensitive equipment
even in the low voltage range – the same range covered by
conventional zener diodes. The relative features of the two
device types are covered in Table 1.

RELATIVE FEATURES OF MOVs and MOSORBS

Table 1.
MOV Mosorb/Zener Transient Suppressor
• High clamping factor. • Very good clamping close to the operating voltage.
• Symmetrically bidirectional. • Standard parts perform like standard zeners. Symmetrical bidirec-
tional devices available for many voltages.
• Energy capability per dollar usually higher than a silicon device. • Good clamping characteristic could reduce overall system cost.
However, if good clamping is required the energy capability would
have to be grossly overspecified resulting in higher cost.
• Inherent wear out mechanism clamp voltage degrades after every • No inherent wear out mechanism.
pulse, even when pulsed below rated value.
• Ideally suited for crude ac line protection. • Ideally suited for precise DC protection.
• High single-pulse current capability. • Medium multiple-pulse current capability.
• Degrades with overstress. • Fails short with overstress.
• Good high voltage capability. • Limited high voltage capability unless series devices are used.
• Limited low voltage capability. • Good low voltage capability.

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 In practice, the Mosorb is selected so that its VRWM is In the data sheets of some protective devices, the
equal to or somewhat higher than the highest operating parameter for response time is emphasized. Response time
voltage required by the load (the circuits or components to on these data sheets is defined as the time required for the
be protected). Under normal conditions, the Mosorb is voltage across the protective device to rise from 0 to V(BR),
inoperative and dissipates very little power. When a and relates primarily to the effective series impedance
transient occurs, the Mosorb converts to a very low dynamic associated with the device. This effective impedance is
impedance and the voltage across the Mosorb becomes the somewhat complex and changes drastically from the
clamping voltage at some level above V(BR). The actual blocking mode to the avalanche mode. In most applications
clamping level will depend on the surge current through the (where the protective device shunts the load) this response
Mosorb. The maximum reverse surge current (IRSM) is time parameter becomes virtually meaningless as indicated
specified on the Mosorb data sheets at 1 ms and for a by the waveforms in Figures 1b and 1c. If the response time
logrithmically decaying pulse waveform. The data sheet as defined is very long, it still would not affect the
also contains curves to determine the maximum surge performance of the surge suppressor.
current rating at other time intervals. However, if the series inductance becomes appreciable, it
Typically, Mosorb devices have a built-in safety margin at could result in “overshoot” as shown in Figure 1d that would
the maximum rated surge current because the clamp voltage, be detrimental to circuit protection. In Mosorb devices,
VRSM, is itself, guardbanded. Thus, the parts will be series inductance is negligible compared to the inductive
operating below their maximum pulse-power (Ppk) rating effects of the external circuitry (primarily lead lengths).
even when operated at maximum reverse surge current). Hence, Mosorbs contribute little or nothing to overshoot
If the transients are random in nature (and in many cases and, in essence, the parameter of response time has very little
they are), determining the surge-current level can be a significance. However, care must be exercised in the design
problem. The circuit designer must make a reasonable of the external circuitry to minimize overshoot.
estimate of the proper device to be used, based on his
knowledge of the system and the possible transients to be SUMMARY
encountered. (e.g., transient voltage, source impedance and In selecting a protective device, it is important to know as
time, or transient energy and time are some characteristics much as possible about the transient conditions to be
that must be estimated). Because of the very low dynamic encountered. The most important device parameters are
impedance of Mosorb devices in the region between V(BR) reverse working voltage (VRWM), surge current (IRSM), and
and VRSM, the maximum surge current is dependent on, and clamp voltage (VRSM). the product of VRSM and IRSM yields
limited by the external circuitry. the peak power dissipation, which is one of the prime
In cases where this surge current is relatively low, a categories for device selection.
conventional zener diode could be used in place of a Mosorb The selector guide, in this book, gives a broad overview
or other dedicated protective device with some possible of the Mosorb transient suppressors now available from ON
savings in cost. The surge capabilities most of Semiconductor. For more detailed information, please
ON Semiconductor’s zener diode lines are discussed in contact your ON Semiconductor sales representative or
ON Semiconductor’s Application Note AN784. distributor.

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 Z

Vout PROTECTED
Vin
LOAD
MOSORB

Figure 1.

VOLTAGE VOLTAGE

Vin Vin

Vout Vout

VRSM VRSM

V(BR) V(BR)
VRWM VRWM
TIME
TIME
tp
tclamping, VERY SHORT
tp = PULSE WIDTH OF INCOMING TRANSIENT

Figure 1a. Figure 1b.

VOLTAGE VOLTAGE

Vin
Vin
OVERSHOOT

Vout Vout

VRSM VRSM

V(BR) V(BR)
VRWM VRWM

TIME
TIME

tclamping, VERY LONG tclamping, WITH OVERSHOOT

Figure 1c. Figure 1d.

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 TYPICAL MOSORB APPLICATIONS
DC Power Supplies Input/Output Regulator Protection
IC
+ + VOLTAGE +
REGULATOR
DC
AC Vout
MOSORBS POWER MOSORB MOSORB
INPUT MOSORB
SUPPLY

- - -

Op Amp Protection DC Motors – Reduces EMI Memory Protection

+B + +5 V

MOSORB DC
MOTOR MOSORB MOSORB
- MOS -8 V
IC MEMORY
OP AMP
MOSORB MOSORB
-10 V
MOSORB
MOSORB
-B
Inductive Switching Transistor Protection

VDD

VGG
ADDRESS BUS

RAM ROM

DATA BUS CPU

MOSORB MOSORB
I/O

CONTROL BUS CLOCK

Gnd
MOSORBS
Microprocessor Protection

A
KEYBOARD
TERMINAL B FUNCTIONAL
I/O
PRINTER C DECODER
ETC. D

Gnd

MOSORBS
Computer Interface Protection

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AR450 – CHARACTERIZING OVERVOLTAGE TRANSIENT SUPPRESSORS

Prepared by
Al Pshaenich
ON Semiconductor Power Products Division

The use of overvoltage transient suppressors for R1 R2

VZ
protecting electronic equipment is prudent and S1 S2
IZ
economically justified. For relatively low cost, expensive
IZ
circuits can be safely protected by one or even several of the VIN C DUT
10%
transient suppressors on the market today. Dictated by the
type and energy of the transient, these suppressors can take tW
on several forms.
For example, in the telecommunication field, where Figure 1a. Simplified Exponential Tester
lightning induced transients are a problem, such primary
suppressors as gas tubes are often used followed by
VEE
secondary, lower energy suppressors. In an industrial or
automotive environment, where transients are IZ
systematically generated by inductive switching, the
transient energy is more well-defined and thus adequately
suppressed by relatively low energy suppressors. These RL tW
lower energy suppressors can be zener diodes, rectifiers with
IZ
defined reverse voltage ratings, metal oxide varistors DUT
(MOVs), thyristors, and trigger devices, among others. Each
device has its own niche: some offer better clamping factors
than others, some have tighter voltage tolerances, some are Figure 1b. Simplified Rectangular Tester
higher voltage devices, others can sustain more energy and Using PNP Switch
still others, like the thyristor family, have low on-voltages.
The designer’s problem is selecting the best device for the Figure 1. Basic Surge Current Testers
application.
Thus, the intent of this article is twofold: automate this circuit, the series switches S1 and S2 can be
replaced with appropriately controlled transistors or SCRs.
1. To describe the operation of the surge current test
One method of easily implementing a rectangular surge
circuits used in characterizing lower energy transient current pulse is shown in the simplified schematic of
suppressors. Figure 1b. A PNP transistor switch connected to the
2. To define the attributes of the various suppressors, positive supply VEE applies power to the DUT. The current
allowing the circuit designer to make the is obviously set by varying either VEE and/or RL. If however,
the transistor switch were replaced with a variable, constant
cost/performance tradeoffs.
current source, measurement procedures are simplified as
Surge suppressors are generally specified with how the limiting resistor need not be selected for various
exponentially decaying and/or rectangular current pulses. current conditions.
The exponential surge more nearly simulates actual surge As in most surge current evaluations, the DUT is
current conditions – capacitor discharges, line and switching ultimately subjected to destructive energy (current, voltage,
transients, lightning induced transients, etc., whereas pulse width), the failure points noted, and the derated points
rectangular surge currents are usually easier to implement plotted to produce the energy limitation curve. Of particular
and control. interest is the junction temperature at which the DUTs are
To generate an exponential rating, a charged capacitor is operated, be it near failure or at the specified derated point.
simply dumped into the device under test (DUT) and the This measurement relates to the overall reliability of the
energy of each successive pulse increased until the device suppressor, i.e., can the suppressor sustain one surge current
ultimately fails. The simplified circuit of Figure 1a describes pulse or a thousand, and will it be degraded when operated
the circuit. By varying the size of the capacitor C, the above the specified maximum operating temperature?
limiting resistor R2, and the voltage to which C is charged The Rectangular Current Surge Suppressor Test Circuit to
to, various peak currents and pulse widths (defined to the be described addresses these questions by implementing and
10% discharge point in this paper) can be obtained. To measuring the rectangular current capability of the

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suppressor and determining the device junction temperature CMOS gate ICs. The remaining blocks are the Sample and
TJ shortly after the end of the surge current pulse. Knowing Hold (S/H) circuit and two detectors for determining the
TJ, the energy to the DUT can be limited just short of failure status of failed DUTs, either shorted devices or open.
and thus a complete surge curve generated with only one, or Shown in Figures 3 and 4 respectively, are the complete
a few DUTs (Figure 6). Second, with the junction circuit and significant waveforms. Clocking for the system
temperature known, a reliability factor can be determined is derived from a CMOS, two inverters, astable MV (gates
for a practical application. 1A and 1B) whose output triggers the two input NOR gate
configured monostable MV (gates 1C and 1D) to produce
CIRCUIT OPERATION FOR THE the Pulse Generator output pulse (Figure 4b). Alternatively,
RECTANGULAR CURRENT TESTER a single pulse can be obtained by setting switch S2 to the One
The Surge Suppressor Test Circuit block diagram is Shot position and depressing the pushbutton Start switch S1.
shown in Figure 2 with the main blocks being the Constant Contact bounce is suppressed by the 100 ms MV (gates 4C
Current Amplifier supplying IZ to the DUT (a zener diode and D). Frequency of the astable MV, set by potentiometer
in this instance) during the power pulse and the Diode R1, can vary from about 200 Hz to 0.9 Hz and the pulse
Forward Current Switch supplying IF during the width, controlled by R2 and the capacitor timing selector
temperature sensing time. These two pulses are applied switch S3, from about 300 µs to 1.3 s.
sequentially, first the much larger IZ, and then the very small The positive going Pulse Generator output feeds the
sense current IF. During the IF time, the forward voltage VF Constant Current Amplifier IZ and turns on, in order, NPN
of the diode is measured from which the junction transistor Q1, PNP transistor Q3, NPN Darlington Q4, PNP
temperature of the zener diode can be determined. This is Power Darlington Q6 and parallel connected PNP Power
simply done by calibrating the forward biased DUT with a Transistors Q8 and Q9. Transistor Q4 is configured as a
specified low value of IF in a temperature chamber, one point constant current source whose current is set by the variable
at 25°C and a second point at some elevated temperature. base voltage potentiometer R3. Thus, the voltage to the
The result is the familiar diode forward voltage versus bases of Q6, Q8 and Q9 are also accordingly varied.
temperature linear plot with a slope of about –2 mV/°C for Transistors Q8 and Q9 (MJ14003, IC continuous of 60 A),
typical diodes (Figure 7a). Comparing the plot with the test also connected as constant current sources with their 0.1 Ω
circuit measured VF yields the DUT junction temperature emitter ballasting resistors, consequently can produce a
for that particular pulse width and IZ (Figure 7b). rectangular current pulse from a minimum of about 0.5 A
and still have adequate gain for 1 ms pulses of 150A peak.
Due to propagation delays of this amplifier, the IZ current
waveform is as shown in Figure 4f. Since Q8 and Q9 must
25 µS
be in the linear region for constant current operation, these
BLANKING GATE
MV transistors are power dissipation limited at high currents to
the externally connected power supply V+ of 60 V. Thus the
SHORT maximum DUT voltage, taking into account the clamping
SAMPLE
PULSE DETECTOR factor of the device, should be limited to about 50 V. At
wider pulse widths and consequently lower currents before
300 µS the DUT fails, the V+ supply should be proportionally
CLOCK SENSE OPEN reduced to minimize Q8, Q9 dissipation. As an example, a
MV DETECTOR 28 V surge suppressor operating at 100 ms pulse widths can
be tested to destructive limits with V+ of about 40 V.
VF
PULSE IZ S/H Although a zener diode is shown as the DUT in the
GEN schematic, the test devices can be any rectifier with defined
IZ
DUT reverse voltage, e.g., surge suppressors.
IF Immediately after the power pulse is applied to the DUT,
IF the negative going sense pulse from the 300 µs MV (Gate
2A, Figure 4e) turns on series connected PNP transistor Q10
Figure 2. Surge Suppressor Test
and NPN transistor Q11 of the Diode Forward Current
Circuit Block Diagram
Switch IF. Sense current, set by current limiting resistor
selector switch S4, thus flows up from ground through the
The System Clock, Pulse Generator, the several forward biased DUT, the limiting resistor, and Q11 to the
monostable multivibrators (25 µs Blanking, Sample Pulse –15 V supply. The result, by monitoring the cathode of the
and 300 µs Sense MVs) and Gate are fashioned from three DUT, is a 300 µs wide, approximately –0.6 V pulse.

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 120 V 1.2 k
+15 V +15 V U8
S1 START SW SYNC +15 V 1/2 W 3
U4C,D MC +15 V
+15 V 1.8M (1/2) MC14001 7815
0.001 µF 1.2M TRIAD +
8 10 0.1 µF 270 pF F90X 2
12 11 390 pF
9 4C 1 3
13 4D R2 5M 5 4
+15 V 2 2A RED (2) 200 µF 0.1 µF
47 k 100 k PW CONT 6 2B 25 V
100 k
1k MDA101A PWR ON
47 k +15 V
39 k + - LED
100 mS MV 1 SHOT SWS2 270 pF 2 2 µC 3
6 5 0.0033 µF 270 pF 16 300 µs -15 V
CONTACT BOUNCE 1A 1 4 1B 3 1D 9 14 13 330 pF 1F 11 7915
7 1C 12 SENSE M.V. 200 µF
2 15 1E 1
FREE 47 k W SW 0.4 µF 25 V U9
22 k 100 k S3
SW RUN 8 100 k U2 0.1 µF
1M S6 0.1 N MC14001 200 µF
R1 P.W. M.V. +15 V
25 V
5M +15 V
CLOCK U1 25 µs M.V. +15 V
60 µs < T2N < 8.5 mS 390 k
MC14572
0.01 µF 7 ms < T2W < 1.1 S 270 pF 100 k 10 k
FREQ CONT
8 10
5 ms < T1 < 1.2S 12 12 14 8 µs
9 2C Q18
13 3D U3 1 3 5 13 2D SAMPLE
MC14001 2 3A 4 8 100 k 390 pF 2N3904
6 3B 10 7 220 pF PULSE
47 k 9 3C
1N914
I2 SWITCH 100 µS SAMPLE DELAY M.V.
4,7 k ≤ 60 V 10.000 µF
15 k V+ 75 V +15 V
10 k 1W
1/2 W 0.001 µF
+15 V 0.1 µF 10 k
Q5 8599 390 1k 2W
MPS (2)
22 0.1 Ω +15 V (1/2) MC14001
1/2 W 25 W SHORT 6 4 10 k Q14 SHORT LED #1
10 k Q7 DET #2 5 4B 470
3.9 k 0.1 µF MPS8099 1W P.W.
Q2 2N6668 Q8 100

428
2N3906 Q9 k 10 k SHORT
1N914 10 k DETECTOR #1 RED
Q16 25 µs
5.6 k 2N3906 5 pF 1k (2) 0.001 µF U4A,B 4.7 k 2N5060
Q3 Q6
Q1 1/2 W 2 3
Q12 0.001 SENSE 300 µS

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2N3904 680 V2 MR821 1 4A +15 V
1/2 W 1.2 k 820 2N6287 43 k CI R4 47 k 2N3906 0.1 µF 1k
47 k 22 k DELAY 100 µS
22 k 10 +15 V 2N3906
R3 SW S4 10 k 100 k 1N914
MPSA29 4.7 k U5A Q15 SAMPLE 8 µS
1k 25 mA DUT RED
Q4 5 mA 150 k 2 (1/2) MC1458
300 10 mA - 1 1k OPEN LED
1/2 W -15 V U5B
180 +15 V 3 SHORT GATE
560 1k 0.1 µF + (1/2) MC1458
2.7 k 1.3 k 10 k LED #2 I2
RED
I2 47 k 1k 10 k +15 V
470 V2
10 mΩ 1W DUT
0.1 µF

Figure 3. Surge Suppressors Surge Current Fixture

1N914
10 k 0.1 µF -0.7 +3 V
100 k
+15 V +15 V 0.1 µF 4.7 k 2N5060
47 k Q17
12 k 5 8
Q11 + 7 4.7 k
Q10 3 7
2N3906 MPS8099 + 6 +15 V +15 V 6
3.3 k 2 -
- 0.1 µF 0.1 µF 0.1 µF 1k
1N914 4
-15 V 4 25 k 0.1 µF 0.1 µF
100 k 10 k
IF SWITCH 0.1 µF
-15 V 1 5
S D 3 OPEN DETECTOR
+ 7 6 1k -15 V
U6 LF355 Q13 2 VF
2N4858 -
0.1 µF
4
S/H RESET SW S5
-15 V
U7 LF355
 For accurate measurements of this pulse amplitude, (Figure 4D) is required to blank out turn-on switching
sample and hold circuitry is employed. This consists of unity transients to produce the waveform shown in Figure 4I.
gain buffer amp U6, series FET switch Q13 and capacitor During the power pulse, U5A is normally high for a good
hold buffer amp U7. The sample pulse (Figure 4H) to the DUT (Figure 4J). This waveform is NOR’d with gate 3B
gate of the FET is delayed about 100 µs (by monostable MV (inverted waveform of Figure 4I) to produce a low level
G-2C and G-2D) to allow for switching and thermal (0 V) gate 3C output (Figure 4K).
transients to settle down. This pulse is derived from the If, however, the DUT is shorted, U5A output switches low
negative going, trailing edge output pulse of Gate 2D cutting resulting in a positive pulse output from G3C. This pulse
off transistor Q18 for the RC time constant in its base circuit. triggers the SCR on, lighting the LED in its anode circuit and
The result is an approximate 8 µs wide sample pulse. turning on the PNP transistor Q2 across the emitter-base of
Consequently, the DC output voltage from hold amplifier Q3, thus clamping off the IZ power pulse. The circuit (Q16)
U7 is a measure of the DUT junction temperature. can be reset by opening switch S5.
Invariably, most DUTs will fail short. When the surge By and large, this Short Detector circuit was found
suppressor tester is in the Free-run Mode, the power pulse adequate to protect transistors Q8 and Q9. However, for
subsequent to the DUT shorting could excessively stress the some wide pulse widths, relatively high current conditions,
constant current drivers Q8 and Q9. To prevent this the propagation delay through the Short Detector was too
occurrence, the Short Detector circuit was implemented. great, resulting in excessive FBSOA (Forward Bias Safe
This circuit consists of comparator U5A, 2 input NOR gate Operating Area) stress on Q8 and Q9. Consequently, a faster
configured 25 µs monostable MV (G1E and G1F), Gate Short Detector #2 was implemented.
Circuit G3A, 3B and 3C, and SCR Q16. The 25 µs MV

CLOCK
(4A)
G1B

(4B) PULSE GEN

G1D

(4C) PULSE GEN

G1C

25 µS MV
(4D) G1E

300 µS
(4E) SENSE MV
G2A

(4F) IZ

100 µS SAMPLE
(4G)
DELAY MV G2D

8 µS +15 V
(4H) SAMPLE PULSE Q8 -14 V

GATE
(4I)
G3C
GOOD
SHORT
(4J) SHORT
COMPARATOR U6A

SHORT SCR SHORT

(4K)
TRIGGER G3C GOOD
GOOD
VF -0.6 V
(4L) OPEN
U6 -14 V
OPEN
OPEN SCR GOOD
(4M)
TRIGGER U5B

Figure 4. Surge Suppressor Test Circuit Waveforms

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 This circuit, connected to the collectors of Q8 and Q9, uses high voltage (V+ = 200 to 350 V) and large capacitors
a differentiating network (R4, C1) to discriminate between (>3000 µF), the power dissipated in the current limiting
the normally relatively slow fall time of the voltage pulse on resistor R1 can be substantial, thus necessitating the
the DUT, and the exceedingly fast fall time when the device illustrated 20 W rating. For longer charging times, switch S3
fails. Thus, the R4-C1 time constant (5 ns) will only generate is closed, doubling the timing capacitor and the astable MV
a negative going trigger to PNP transistor Q12 when the DUT on time.
voltage collapses during device failure. The positive going To discharge capacitor C1 and thereby generate the
output from Q12 resets the flip-flop (gates 4A and 4B), which exponential surge current, the SCR must be fired. This
turns on the NPN transistor Q14. This transistor supplies trigger is generated by the positive going one second pulse
drive to the two PNP clamp transistors (Q5 and Q7) placed from gate 1A being integrated by the R2C2 network, and
respectively across the emitter-bases of the high, constant then shaped by gates 1C and 1D. The net result of about 100
current stages Q6 and Q8 and Q9. Propagation delay is thus µs time delay from gate 1D ensures noncoincident timing
minimized, providing greater protection to the power stages conditions. This pulse output is then differentiated by C3-R3
of the tester. As an added safety feature, the positive going with the positive going leading edge turning on Q3, Q4 and
output from Gate 3C when Short Detector #1 is activated is finally the SCR with about a 4 ms wide, 15 mA gate pulse.
also used to trigger the flip-flop. Consequently, the DUT is subjected to a surge current pulse
On the few occasions when the DUT fails open, then the whose magnitude is dictated by the voltage on the capacitor
Open Detector consisting of comparator U5B and SCR Q17 C1 and value of resistor RS, and also whose pulse width to
comes into play. This circuit measures the DUT integrity the 10% point is 2.3 RSC1. For a fixed pulse width, the DUT
during the sense time. For a good DUT (VF < –1 V), U5B is then stressed with increasing charge (by increasing V+)
output remains low (see Figures 4L and 4M). However for until failure occurs, usually a shorted device.
an open DUT, VF switches to the negative rail and U5B goes If the DUT is the SCR (or MOS SCR), the failed condition
high, turning on Q17. As in the Short Detector, Q2 clamps is obvious as the capacitor C1 will not be allowed to charge
off the IZ power amplifier. for subsequent timing cycles. However, when the DUT is the
All of the circuitry including the +15 V and –15 V zener, rectifier, SIDAC or even an MOV, and the SCR is an
regulated power supplies are self-contained, with the adequately rated switch, the circuit will still discharge
exception of the V+ supply. For high current, narrow pulse through the shorted DUT, but now the SCR alone will be
width testing, this external supply should have 10 to 15 A stressed by the surge current. A shorted DUT can be detected
capability. If not, additional energy storing capacitors across by noting the voltage across the device during testing.
the supply output may be required. One problem encountered when stressing SCRs with high
voltage is when the DUT fails short. The limiting resistor
CIRCUIT OPERATION FOR THE R1, which is only rated for 20 W, would now experience
EXPONENTIAL SURGE CURRENT TESTER continuous power dissipation for the full On time – as much
To generate the surge current curve of peak current versus as 123 W ([350 V]2/1K). To prevent this occurrence, the PR1
exponential discharge pulse width, the test circuit of Short Protection Circuit is incorporated. Since this is only a
Figure 5 was designed. This tester is an implementation of problem when high V+’s (>100 V) are used, the circuit can
the simplified capacitor discharge circuit shown in be switched in or out by means of switch S2. When
Figure 1A, with the PNP high voltage transistor Q2 activated, this circuit monitors the voltage on capacitor C1
allowing the capacitor C to charge through limiting resistor some time after the charging cycle begins. If the capacitor is
R1 and a triggered SCR discharging the capacitor. As shown charging, normal operation occurs. However, if the SCR
in Figure 5, the DUTs can be of any technology, although the DUT is shorted, the absence of voltage on the capacitor is
device connected to the capacitor and discharge limiting detected and the system is disabled.
resistor RS is shown as an MOS SCR. It could just as well The circuit consists of one CMOS IC with NAND gates
have been an SCR as the DUT or as the switch for the zener 2A and 2B comprising a one second monostable time delay
diode, rectifier, SIDAC, etc., DUTs. MV and gates 2C and 2D forming a comparator and NAND
System timing for this Exponential Surge Current Tester gate, respectively.
is derived from a CMOS quad 2 input NOR gate with gates The negative going, trailing edge of gate 2A is
1A and 1B comprising a non-symmetrical astable MV of differentiated by R4-C4, and amplified by Q5 to form a
about 13 seconds on and about one second off (switch S3 positive, 10 ms wide pulse (delayed by 1 sec) to gate 2D
open). The positive On pulse from gate 1B turns on the 500 input. If the capacitor C1 is shorted, gate 2C output is high,
V power MOSFET Q1 and the following PNP transistor Q2. allowing the now negative pulse from gate 2D to turn on
The extremely high current gain FET allows for the large PNP transistor Q6 and SCR Q7. This latches the input to the
base current variation of Q2 with varying supply voltage astable MV gate 1A low, disabling the timing and
(V+). This capacitor charging circuit has a 400 V blocking consequently removing the power from R1. Resetting the
capability (limited by the VCEO of Q2) and thus the capacitor tester for a new device is accomplished by depressing the
C1 used should be comparably rated. When operating with pushbutton switch S1.

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 5 4
+15 V
1 6 1D
+15 V 3 +15 V
2 1C
C3 10K
1.5K
0.1 µF Q4
47K 1/2 W
C2 +15 V 2N3906
+15 V 0.001 µF V+ ≤350 V R3
GRN 10K
2N3904 10K
LED
+15 V 15K Q3
R2 1K
MC14011 22K 20 W 2N3904
100 k
1M 1N914
22K
14 Q1
12 11 1K Q2
8 MTP2N50
10 13 1B MJE5852
9 1A
7
1K ZENER DUT
20 W R1

CAP RS
18M 1.8M DISCHARGE
SW RECTIFIER DUT
1N914 S4
22M 0.47 µF ON TIME 1N4005
13S C1 SIDAC DUT
SW 10
0.47 µF S3 25S
2W DUT SHORT
1K INDICATOR
MOS SCR +15 V
SCR DUT
DUT/SW 10K
150K
2W RED
LED

1K
1/2 W
+15 V +15 V
12 SW S1
1N914 11 47K
0.1 µF 8 10
1N914 13 2D
22K 9 2C
C4 R4 22K SW RESET
100K 0.1 µF 47K S2
+15 V Q5 LV
2N3906 1M
+15 V HV
Q6
5 2N3906 2N5060
1 4 +15 V
3 0.01 µF Q7
6 2B
2 2A 6.8K
10K
15M
1 SEC DELAY MV
MC14011 1K 0.1 µF

Figure 5. Exponential Surge Current Tester

Exponential surge current curves, as well as rectangular, voltages generally greater than 30 V. Also, since energy
are generated by destructive testing of at least several DUTs capability is related to die size, this parameter is also listed.
at various pulse widths and derating the final curve by For several devices, both rectangular and exponential surge
perhaps 20–30%. These tests were conducted at low duty current pulses are listed. Other devices were tested with only
cycles (<2%). To ensure multicycle operation, the DUTs are rectangular pulses (where the junction temperature can be
then tested for about 1000 surges at a derated point on the determined) and still others, whose applications include
curve. crowbars, with exponential current only.
TEST RESULTS AVALANCHE RECTIFIER
In trying to make a comparison of the several different The Rectangular Surge Current Tester was originally
technologies of transient suppressors, some common designed for characterizing rectifier surge suppressors used
denominator has to be chosen, otherwise, the amount of in automotive applications. For this operation, where
testing and data reduction becomes unwieldy. For this temperatures under the hood can reach well over 125°C, it
exercise, voltage was used, generally in the 20 V to 30 V is important to know the device junction temperature at
range, although some of the more unique suppressors elevated ambient temperature. Figures 6 and 7 describe the
(SIDACs, MOS SCRs, SCRs) were tested at their operating results of such testing on a typical suppressor, the 24 V–32 V
voltage. As an example, the SIDAC trigger families of MR2520L. It should be noted that these axial lead
devices were tested with voltages greater than their suppressors, as well as all other axial lead devices tested,
breakover voltage (104 V to 280 V) and the SCRs were were mounted between two spring loaded clips spaced 1
subjected to exponential surge currents derived from inch apart.

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 As shown in Figure 6 of the actual current failure points 1
of the DUTs, at least four devices were tested at the various MR2520L AVALANCHE RECTIFIER

V F , FORWARD VOLTAGE (VOLTS)

SURGE SUPPRESSOR
pulse widths, tw (in this example from 0.5 ms to 100 ms). 0.8 IF = 10 mA
Also shown in Figure 6 is the curve derived with a single
DUT at an energy level just short of failure. This
0.6
measurement was obtained by maintaining a constant
rectifier forward voltage drop, VF (0.25 V) for all pulse
widths (junction temperature, TJ of 230°C) by varying the 0.4
avalanche current. Thus, one device can be used,
non-destructively, to generate the complete rectangular 0.2
surge current curve.
It should also be pointed out that the definition for the 0
exponential tw in this article is the current discharge point to 0 50 100 150 200 250 300 350
TJ, JUNCTION TEMPERATURE (°C)
the 10% value of the peak test current IZM. Expressed in time
constant τ, this would be 2.3 RC. Some data sheets describe Figure 7a. Temperature Calibration Curve
tw to the 50% point of IZM (0.69 τ) and others to 5 τ. To Of The MR2520L
normalized these time scales (abscissa of curves) simply
change the scales accordingly; i.e., IZM/2 pulse widths would RECTANGULAR IZ VF TJ
be multiplied by 2.3/0.69 = 3.33 for tw at 10% current pulses. PULSE (A) (V) (°C)
Figure 7a describes the actual temperature calibration tW = 10 ms
I = 10 mA
F
11 0.64 225
curve (measured in a temperature chamber) of the
MR2520L and Figure 7b, the junction temperature of the 10 0.57 75
DUT at various 10 ms rectangular pulse current amplitudes. Figure 7b. Measured 20 0.48 120
These temperatures are taken from the calibration curve (in Forward Voltage 30 0.36 180
actuality, an extremely linear curve), knowing the rectifier 40 0.25 230
forward voltage drop immediately (within 100 µs) after
50 0.15 290
cessation of power. Note that the junction temperature just
DUT
prior to device failure is about 290°C. 55 0.10
FAILED

200 Figure 7. Calculated Junction Temperature

MR2520L RECTIFIER Of The MR2520L Surge Suppressor
I Z , PEAK SURGE CURRENT (AMPS)

SURGE SUPPRESSOR, At Various Avalanche Currents

RECTANGULAR PULSE
100
VZ = 28 V TYP
TA = 25°C
apparent that the device is very conservatively specified.
50 Also, the relative magnitudes of the two curves reflect the
differences in the rms values of the two respective pulses.
ACTUAL DUTS FAILURE POINTS
ONE DUT WITH VF = 0.25 V SIDAC
20 TJ = 230°C
SIDACs are increasingly being used as overvoltage
transient suppressors, particularly in telephone applications.
10 Being a high voltage bilateral trigger device with relatively
0.5 1 2 5 10 20 50 100
tW, RECTANGULAR PULSE WIDTH (ms) high current capabilities, they serve as a costeffective
overvoltage protection device. As in other trigger devices,
Figure 6. Experimental Rectangular Surge when the SIDACs breakover voltage is exceeded, the device
Current Capability Of The MR2520L Rectifier switches to a low voltage conduction state, allowing an
Surge Suppressor inordinate amount of surge current to be passed. This is well
illustrated by the surge current curves of Figure 9 which
ZENER OVERVOLTAGE TRANSIENT describe the small die size ([37]2mil) axial lead, Case 59-04,
SUPPRESSOR MKP9V240 SIDAC. The curves show that this 240 V device
Illustrated in Figure 8 are the actual rectangular and was able to handle, to failure, as much as 31 A and 15 A,
exponential surge current curves of the P6KE30 overvoltage respectively, for 1 ms exponential and rectangular current
transient suppressor, an axial lead, Case 17, 30 V zener pulses. Under the same pulse conditions, the large die
diode characterized and specified for surge currents. This ([78]2mil) MK1V270 SIDAC handled 170 A and 60 A,
device is specified for 600 W peak for a 1 ms exponential respectively, as shown in Table 2.
pulse measured at IZM/2. From the exponential curve, it is

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 100 OVERALL RATINGS
I Z , PEAK SURGE CURRENT (AMPS) P6KE30 OVERVOLTAGE
50 TRANSIENT SUPPRESSOR The compilation of all of the testing to date on the various
EXPONENTIAL VZ = 30 V transient suppressors is shown in Tables 1 and 2. Table 1
PSPEC = 600 W pk describes the zener suppressors, avalanche rectifiers and
IZ
@ MOVs, comparing the die size and normalized costs
2
10 (referenced to the MOV V39MA2A). From this data, the
RECTANGULAR designer can make a cost/performance judgment.
5 Of interest is that the small pellet MOV is not the least
IZ expensive device. The P6KE30 overvoltage transient
10 suppressor costs about 85% of the MOV, yet it can handle
tW % about three times the current (2.5 A to 0.7 A) for a 100 ms
1 rectangular pulse. Under these conditions, the resultant
0.1 0.5 1 5 10 50 100 500 1000
clamping voltages for the zener and MOV were 32 V and
tW, PULSE WIDTH (ms)
60 V respectively.
Figure 8. Surge Current Capability Of The P6KE30 Also shown in the table is a 1.5 W zener diode specified
Overvoltage Transient Suppressor As A Function Of for zener applications. This low surge current device costs
Exponential & Rectangular Pulse Widths
three times the MOV, illustrating that tight tolerance zener
diodes are not cost effective and that the user should use
devices designed and priced specifically for the suppressor
100 application.
SIDAC MKP9V240
Thyristor type surge suppressors are shown in Table 2.
I Z , PEAK SURGE CURRENT (AMPS)

240 V
50 They include four SIDAC series, two SCRs designed and
CASE 5904
372 MILS characterized specifically for crowbar applications and also
20 EXPONENTIAL the MOS SCR MCR1000. The MOS SCR, a process
variation of the vertical structure power MOSFET,
10 combines the input characteristics of the FET with the
RECTANGULAR
latching action of an SCR.
5
All devices were surge current tested with the resultant
IZ peak currents being impressively high. The TO-220 (150)2
2 10 mil SCR MCR69 for example, reached peak current levels
tW %
approaching 700 A for a 1 ms exponential pulse. The
1
0.2 0.5 1 2 5 10 20 50 100 guaranteed, derated, time base translated curves for the
tW, PULSE WIDTH (ms) crowbar SCR family of devices are shown in Figure 10, as
is the MK1V SIDAC in Figure 11.
Figure 9. Measured Surge Current To Failure
Figures 12A–C describe the guaranteed, reverse surge
Of A SIDAC MKP9V240
design limits for the avalanche rectifier devices. These three
figures illustrate, respectively, the peak current, power and
energy capabilities of these overvoltage transient
suppressors derived from exponential testing. The peak
power, Ppk, ordinate of the curve is simply the product of the
derated IZ and VZ and the energy curve, the product of Ppk
and tw.

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 1
C = 8400 µF TA = 25°C Ipk N = 2000 PULSES
ESR ≈ 25 mΩ N = 2000 PULSES

NORMALIZED PEAK SURGE CURRENT

VC ≤ 60 V f = 3 PULSES/MIN.
Ipk , PEAK CURRENT (AMPS)

3000 MCR71 0.8

tW 5 TC
MCR70
1000
MCR69
MCR68 0.6
300
MCR67
100
0.4
30

0.1 0.5 1 5 10 50 100 0 25 50 75 100 125

tW, BASE PULSE WIDTH (ms) TA, AMBIENT TEMPERATURE (°C)
a. Peak Surge Current versus Pulse Width b. Peak Surge Current versus
Ambient Temperature

Figure 10. SCR Crowbar Derating Curves

100 300

I RSM , PEAK REVERSE CURRENT (AMPS)

MR2530L
SIDAC MK1V115 TC = 25°C, DUTY CYCLE ≤ 1%
I Z , PEAK SURGE CURRENT (AMPS)

50 V(BO) = 115 V MAX 200

TA = 25°C MR2525L
30
100
MR2520L
10 70
IZ 50
5
3 10%
30
tW SEE NOTE FOR TIME
20 CONSTANT DEFINITION
1
0.3 0.5 1 3 5 10 30 50 100 300 1 2 5 10 20 50 100 200 500 1000
tW, PULSE WIDTH (ms) τ, TIME CONSTANT (ms)

Figure 11. Exponential Surge Current Figure 12a. Peak Current

Capability Of The MK1V SIDAC, Pulse Width
versus Peak Current

300
WRSM , PEAK REVERSE ENERGY (JOULES)

10000
PRSM , PEAK REVERSE POWER (WATTS)

TC = 25°C, DUTY CYCLE ≤ 1%

7000 MR2530L 200

5000 MR2525L
TC = 25°C, DUTY CYCLE ≤ 1%
100
3000 MR2520L

2000 50

MR2530L

1000 30
SEE NOTE FOR TIME MR2525L SEE NOTE FOR TIME
700 CONSTANT DEFINITION 20 CONSTANT DEFINITION
MR2520L
500
1 2 5 10 20 50 100 200 500 100 1 2 5 10 20 50 100 200 500 1000
τ, TIME CONSTANT (ms) 0 τ, TIME CONSTANT (ms)
NOTE: τ = RC
Figure 12b. Peak Power Figure 12c. Energy
Figure 12. Guaranteed Reverse Surge Design Limits for the
MR2525L & MR2530L Overload Transient Suppressors

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 Table 1. Measured Surge Current Capability of Transient Suppressors
Spec. Peak Current at Pulse Widths, Ipk (Amps)
Clamping
1 ms 10 ms 20 ms 100 ms Factor Norm.
Device Power Die V1ms
1 ms Cost
Type Title Part No. Case Volt (Energy) Size Exp. Rect. Exp. Rect. Exp. Rect. Exp. Rect. V100ms *

Surge Supp., 2.5KW 1502 27V  1.2

MR2520L 24-32 V 85 A 40 30 18
Avalanche Overvoltage Peak mil 22V
194 05
194-05
Rectifier Transient 10KW 1962
MR2525L 24-32 V 150 A 70 54 37 31 4.0
Suppressor Peak mil  1.3
23

1N5936A 30 V 12 A 5 6 2.5 5 2 3 1.3 41  1.4

1.5 W Zener 1.5 W 372 30
DO 41
DO-41 32
3.2
Diode Cont. mil 28
1N5932A 20 V 23 A 6 10 2.8 7 2.3 5 1.4  1.2
23

P6KE30 30 V 43 A 14 14 5 10 4.5 5 2.5 41  1.3

Overvoltage
600 W 602 32
Zener Transient 17 0 85
0.85
Peak mil 16
Suppressor P6KE10 10 V 24 A 12 9 5.5  1.2
13

1.5KE30 30 V 35 A 10 4 35
 1.1
1500 W 1042 33
MOSORB 41A 02
41A-02 18
1.8
Peak mil 30V
1.5KE24 24 V 45 A 14 6  1.1
28V

Metal
V39MA2A
Axial
Lead
28 V Joules
0.16

3 mm 9A 5 0.7
80V
60V
6A
0.7A
1.0
MOV** Oxide
Varistor V33ZA1
Radial
Lead
26 V Joules
1.0

7 mm 35 4A
105V
80V
35A
4A
1.4

**G.E.

Table 2. Measured Surge Current Of Thyristor Type Devices

Ipk @ tW

1 ms 10 ms Norm
Voltage Die Cost
Technology Device Ratings Case Size Exponent. Rectang. Exponent. Rectang. *
MKP9V130 Series 104 V–135 V 40 A 13 A 16 A 8A
59 04
59–04 372 mil 0 87
0.87
MKP9V240 Series 220 V–280 V 31 A 15 A 20 A 8A
SIDAC
MK1V135 Series 120 V–135 V 140 A 80 A 55 A 30 A
267 01
267–01 782 mil 11
1.1
MK1V270 Series 220 V–280 V 170 A 60 A 90 A 28 A

MCR68 Series 922 mil 300 A 170 A 1.2

SCR 25 V
V–400
400 V
MCR69 Series 1502 mil 700 A 400 A 1.9
TO 220
TO–220
127 mil
MOS SCR MCR1000 Series 200 V–600 V x 250 A 170 A 9.3
183 mil
*Normalized to G.E. MOV V39MA2A, Qty 1-99, 1984 Price

Additionally, the published non-repetitive peak power zener operating at a 1.0% duty cycle, the respective derating
ratings of the various zener diode packages are illustrated in factors for 10 µs and 10 ms pulses are 0.08 and 0.47. The
Figure 13. Figure 14 describes the typical derating factor for non-repetitive peak power capabilities for these two pulses
repetitive conditions of duty cycles up to 20%. Using these (10 µs and 10 ms) are about 1300 W and 50 W respectively,
two empirically derived curves, the designer can then resulting in repetitive power and current capabilities of
determine the proper zener for the repetitive peak current about 104 W and 24 W and consequently 5.2 A and 1.2 A.
conditions.
At first glance the derating of curves of Figure 14 appear MOV
to be in error as the 10 ms pulse has a higher derating factor All of the surge suppressors tested with the exception of
than the 10 µs pulse. However, when the mathematics of the MOV are semiconductors. The MOV is fabricated from
multiplying the derating factor of Figure 14 by the peak a ceramic (Zn0), non-linear resistor. This device has wide
power value of Figure 13 is performed, the resultant acceptance for a number of reasons, but for many
respective power and current capability of the device applications, particularly those requiring good clamping
follows the expected trend. For example, for a 5 W, 20 V

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 100 SOURCE IMPEDANCE RS = 500 Ω
PPK(NOM), NOMINAL PEAK POWER (kW) 50
20
10
5
2 1N6267 SERIES
1
0.5
5 WATT TYPES
0.2 1 TO 3 W TYPES
0.1 PLASTIC DO41
0.05
250 mW TO 1 W TYPES
0.02
GLASS DO35 & GLASS DO41
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
PULSE WIDTH (ms)
Power is defined as VZ(NOM) x IZ(PK) where VZ(NOM) is the
nominal zener voltage measured at the low test current used for
voltage classification.

Figure 13. Peak Power Ratings of Zener Diodes

27 V MOV
G.E. V27ZA4, 4 JOULES CAPABILITY
1 Figure 15a.
0.7
0.5 SOURCE IMPEDANCE RS = 500 Ω

0.3
DERATING FACTOR

0.2
PULSE WIDTH
0.1 10 ms
0.07
0.05 1 ms

0.03
100 µs
0.02
10 µs
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
D, DUTY CYCLE (%)

Figure 14. Typical Derating Factor for Duty Cycle

factors, the MOV is found lacking; (clamping factor is

defined as the ratio of VZ at the test current to that at 1.0 mA).
This is photographically illustrated in Figure 15 which
compares a 27 V zener (1N6281) with a 27 V MOV 27 V ZENER DIODE
(V27ZA4). The input waveform, through a source ON Semiconductor 1N6281, APPROX. 1.5 JOULES
impedance resistance to the DUTs, was an exponentially Figure 15b.
decaying voltage waveform of 90 V peak. Figures 15A and
continuous device (39 V ±10% at 1 mA) at the pulse widths
B compare the output waveforms (across the DUTs) when
and currents tested, the resultant voltage VZ across the MOV
the source impedance was 500 Ω and Figures 15C and D for
– 80 V at about 6 A – necessitated a high voltage fixture. This
a 50 Ω condition. The zener clamped at about 27 V for both
was accomplished with a circuit similar to that of Figure 1B.
impedances whereas the MOV was about 40 V and 45 V
But MOVs do have their own niche in the marketplace, as
respectively.
described in Table 3, the Relative Features of MOVs and
Surge current capabilities of a comparably powered MOV
MOSORBs.
were also determined, as shown in the curve of Figure 16.
Although the MOV, a V39MA2A, is specified as a 28 V

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 SOURCE IMPEDANCE RS = 50 Ω 10

I Z , PEAK SURGE CURRENT (AMPS)

5
3

1
G.E. V39MA2A MOV
0.5 VDCM = 28 V
VNOM = 39 V @ 1 mA
0.3 TA = 25°C

0.1
1 3 5 10 30 50 100
tW, PULSE WIDTH (ms)

Figure 16. Rectangular Surge Current Capability

Of The V39MA2A MOV

27 V MOV

Figure 15c. Table 3. Relative Features of MOVs

and MOSORBs
MOSORB/Zener Transient
SOURCE IMPEDANCE RS = 50 Ω
MOV Suppressor
High Clamping Factor Very good clamping close to
the operating voltage.
Symmetrically bidirectional Standard parts perform like
standard zeners. Symmetrical
bidirectional devices available
for many voltages.
Energy capability per dollar Good clamping
usually much greater than a characteristics could reduce
silicon device. However, if overall cost.
good clamping is required a
higher energy device would be
needed, resulting in higher
cost.
Inherent wear out mechanism, No inherent wear out
clamp voltage degrades after mechanism.
every pulse, even when
pulsed below rated value.
Ideally suited for crude AC line Ideally suited for precise DC
27 V ZENER DIODE protection. protection.
Figure 15d. High single-pulse current Medium multiple-pulse
capability. current capability.
Figure 15. Clamping Characteristics of a
Degrades with overstress. Fails short with overstress.
27 V Zener Diode and 27 V MOV
Good high voltage capability. Limited high voltage capability
unless series devices are
used.
Limited low voltage capability. Good low voltage capability.

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 SUMMARY REFERENCES
The surge current capabilities of low energy overvoltage
1. Cherniak, S., A Review of Transients and Their Means
transient suppressors have been demonstrated, including
cost/performance comparison of rectifiers, zeners, thyristor of Suppression, ON Semiconductor Application Note
type suppressors, and MOVs. Both rectangular and AN843.
exponential testing have been performed with the described 2. Wilhardt, J., Transient Power Capability of Zener
testers. Additionally, the Rectangular Current Surge Tester Diodes, ON Semiconductor Application Note AN784.
has the capability of measuring the diode junction
temperature of zeners and rectifiers at various power levels, 3. Pshanenich, A., Characterizing the SCR for Crowbar
thus establishing safe operating limits. Applications, ON Semiconductor Application Note
AN879.
4. Pshaenich, A., The SIDAC, A New High Voltage
Trigger that Replaces Circuit Complexity and Cost,
ON Semiconductor Engineering Bulletin EB-106.
5. General Electric, Transient Voltage Suppression
Manual, Second Edition.

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 MEASUREMENT OF ZENER VOLTAGE TO THERMAL EQUILIBRIUM
WITH PULSED TEST CURRENT

Prepared by
Herb Saladin
Discrete Power Application Engineering

INTRODUCTION current (IZT) pulse width other than the pulse width used by
This paper discusses the zener voltage correlation the manufacturer.
problem which sometimes exists between the manufacturer Thermal equilibrium (TE) is reached when diode junction
and the customer’s incoming inspection. A method is shown temperature has stabilized and no further change will occur
to aid in the correlation of zener voltage between thermal in VZ if the IZT time is increased.2 This absolute value can
equilibrium and pulse testing. A unique double pulsed vary depending on the mounting method and amount of
sample and hold test circuit is presented which improves the heatsinking. Therefore, thermal equilibrium conditions
accuracy of correlation.1 have to be defined before meaningful correlation can exist.
Several zener voltages versus zener pulsed test current Normalized VZ curves are shown for four package styles
curves are shown for four package styles. An appendix is and for three to five voltage ratings per package. Pulse
attached for incoming inspection groups giving detailed widths from 1 ms up to 100 seconds were used to arrive at
information on tolerances involved in correlation. or near thermal equilibrium for all packages with a given
For many years the major difficulty with zener diode method of mounting.
testing seemed to be correlation of tight tolerance voltage
Mounting
specifications where accuracy between different test setups
was the main problem. The industry standard and the EIA There are five conditions that can affect the correlation of
Registration system adopted thermal equilibrium testing of VZ measurements and are: 1) instrumentation, 2) TA, 3) IZT
zener diodes as the basic test condition unless otherwise time, 4) PD and 5) mounting. The importance of the first
specified. Thermal equilibrium was chosen because it was four conditions is obvious but the last one, mounting, can
the most common condition in the final circuit design and it make the difference between good and poor correlation. The
was the condition that the design engineers needed for their mounting can have a very important part in VZ correlation
circuit design and device selection. Thermal equilibrium as it controls the amount of heat and rate of heat removal
testing was also fairly simple to set-up for sample testing at from the diode by the mass and material in contact with the
incoming inspection of standard tolerance zeners. diode package.
In recent years with the advent of economical Two glass axial lead packages (DO-35 and DO-41),
computerized test systems many incoming inspection areas curves (Figures 5 and 6) were measured with standard
have implemented computer testing of zener diodes which Grayhill clips and a modified version of the Grayhill clips to
has been generating a new wave of correlation problems permit lead length adjustment.
between customers and suppliers of zener diodes.
Test Circuit
The computerized test system uses short duration pulse
test techniques for testing zener diodes which does not The test circuit (Figure 8) consists of standard CMOS
directly match the industry standard thermal equilibrium logic for pulse generation, inverting and delaying. The logic
test specifications. drives three bipolar transistors for generation of the power
This paper was prepared in an attempt to clarify the pulse for IZT. VZ is fed into an unique sample and hold (S/H)
differences between thermal equilibrium and short duration circuit consisting of two high input impedance operational
pulse testing of zener diodes, to provide a test circuit that amplifiers and a field effect transistor switch.
allows evaluation at various pulse widths and a suggested For greater accuracy in VZ measurements using a single
procedure for incoming inspection areas that will allow pulse test current, the FET switch is double pulsed. Double
meaningful correlation between thermal equilibrium and pulsing the FET switch for charging the S/H capacitor
pulse testing. increases accuracy of the charge on the capacitor as the
In the measurement of zener voltage (VZ), the second pulse permits charging the capacitor closer to the
temperature coefficient effect combined with test current final value of VZ.
heating can present a problem if one is attempting to The timing required for the two pulse system is shown in
correlate VZ measurements made by another party (Final waveform G-3C whereby the initial sample pulse is delayed
Test, Quality Assurance or Incoming Inspection).2 This from time zero by a fixed 100 µs to allow settling time and
paper is intended as an aid in determining VZ at some test the second pulse is variable in time to measure the analog
input at that particular point. The power pulse (waveform
G-2D) must also encompass the second sample pulse.

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 To generate these waveforms, four time delay monostable Table 1. S3 — Pulse Width
multivibrators (MV) are required. Also, an astable MV, is
Switch
required for free-running operation; single pulsing is simply *C(µF)
Position t(ms)
initiated by a push-button switch S1. All of the pulse
generators are fashioned from two input, CMOS NOR gates; 1 0.001 1
2 0.004 3
thus three quad gate packages (MC14001) are required.
3 0.006 5
Gates 1A and 1B form a classical CMOS astable MV clock 4 0.01 10
and the other gates (with the exception of Gate 2D) comprise 5 0.04 30
the two input NOR gate configured monostable MV’s. The 6 0.06 50
Pulse Width variable delay output (Gate 1D) positions the 7 0.1 100
8 0.4 300
second sample pulse and also triggers the 100 µs Delay MV 9 0.6 500
and the 200 µs Extended Power Pulse MV, The respective 10 1.0 1K
positive going outputs from gates 3A and 2C are diode 11 1.2 3K
NOR’ed to trigger the Sample Gate MV whose output will 12 6.0 5K
consequently be the two sample pulses. These pulses then 13 10 10K
*Approximate Values
turn on the PNP transistor Q1 level translator and the
following S/H N-channel FET series switch Q2. Op amps
Using Curves
U4 and U5, configured as voltage followers, respectively
provide the buffered low output impedance drive for the Normalized VZ versus IZT pulse width curves are shown
input and output of the S/H. Finally, the pulse extended in Figure 1 through 6. The type of heatsink used is shown or
Power Gate is derived by NORing (Gate 2D) the Pulse specified for each device package type. Obviously, it is
Width Output (Gate 1D) with the 200 µs MV output (Gate beyond the scope of this paper to show curves for every
2C). This negative aging gate then drives the Power voltage rating available for each package type. The object
Amplifier, which, in turn, powers the D.U.T. The power was to have a representative showing of voltages including
amplifier configuration consists of cascaded transistors when available, one diode with a negative temperature
Q3–Q5, scaled for test currents up to 2 A. coefficient (TC).
Push button switch (S4) is used to discharge the S/H These curves are actually a plot of thermal response
capacitor. To adjust the zero control potentiometer, ground versus time at one quarter of the rated power dissipation.
the non-inverting input (Pin 3) of U4 and discharge the S/H With a given heatsink mounting, VZ can be calculated at
capacitor. some pulse width other than the pulse width used to specify
VZ.
Testing For example, refer to Figure 5 which shows normalized
The voltage VCC, should be about 50 volts higher than the VZ curves for the axial lead DO-35 glass package. Three
D.U.T. and with RC selected to limit the IZT pulse to a value mounting methods are shown to show how the mounting
making VZT IZT = 1/4 PD (max), thus insuring a good current effects device heating and thus VZ. Curves are shown for a
source. All testing was performed at a normal room 3.9 V diode (1N5228B) which has a negative TC and a 12 V
temperature of 25°C. A single pulse (manual) was used and diode (1N5242B) having a positive TC.
at a low enough rate that very little heat remained from the In Figure 5, the two curves generated using the Grayhill
previous pulse. mountings are normalized to VZ at TE using the
The pulse width MV (1C and 1D) controls the width of the ON Semiconductor fixture. There is very little difference in
test pulse with a selector switch S3 (see Table 1 for capacitor VZ at pulse widths up to about 10 seconds and mounting only
values). Fixed widths in steps of 1, 3 and 5 from 1 ms to 10 causes a very small error in VZ. The maximum error occurs
seconds in either a repetitive mode or single pulse is at TE between mountings and can be excessive if VZ is
available. For pulse widths greater than 10 seconds, a stop specified at TE and a customer measures VZ at some narrow
watch was used with push button switch (S1) and with the pulse width and does not use a correction factor.
mode switch (S2) in the > 10 seconds position. Using the curves of Figure 5, VZ can be calculated at any
For all diodes with VZ greater than about 6 volts a resistor pulse width based upon the value of VZ at TE which is
voltage divider is used to maintain an input of about 6 V to represented by 1 on the normalized VZ scale. If the 1N5242B
the first op amp (U4) so as not to overload or saturate this diode is specified at 12 V ± 1.0% at 90 seconds which is at
device. The divider consists of R5 and R6 with R6 being TE, VZ at 100 ms using either of the Grayhill clips curves
10 kΩ and R5 is selected for about a 6 V input to U4. would be 0.984 of the VZ value at TE or 1 using the
Precision resistors or accurate known values are required for ON Semiconductor fixture curve. If the negative TC diode
accurate voltage readout. is specified at 3.9 V ± 1.0% at TE (90 seconds), VZ at 100
ms would be 1.011 of VZ at TE (using ON Semiconductor
fixture curve) when using the Grayhill Clips curves.

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 In using the curves of Figure 5 and 6, it should be kept in subtracted or added to the calculated VZ depending upon
mind that VZ can be different at TE for the three mountings whether the diode has a negative or positive TC.
because diode junction temperature can be different for each
mounting at TE which is represented by 1 on the VZ General Discussion
normalized scale. Therefore, when the correlation of VZ The TC of zener diodes can be either negative or positive,
between parties is attempted, they must use the same type of depending upon die processing. Generally, devices with a
mounting or know what the delta VZ is between the two breakdown voltage greater than about 5 V have a positive
mountings involved. TC and diodes under about 5 V have a negative TC.
The Grayhill clips curves in Figure 6 are normalized to the
ON Semiconductor fixture at TE as in Figure 5. Figures 1 Conclusion
through 4 are normalized to VZ at TE for each diode and Curves showing VZ versus IZT pulse width can be used to
would be used as Figures 5 and 6. calculate VZ at a pulse width other than the one used to
Measurement accuracy can be affected by test equipment, specify VZ. A test circuit and method is presented to obtain
power dissipation of the D.U.T., ambient temperature and VZ with a single pulse of test current to generate VZ curves
accuracy of the voltage divider if used on the input of the first of interest.
op-amp (U4). The curves of Figures 1 through 6 are for an
ambient temperature of 25°C, at other ambients, θVZ has to References
be considered and is shown on the data sheet for the
1N5221B series of diodes. θVZ is expressed in mV/°C and 1. Al Pshaenich, “Double Pulsing S/H Increases System
for the 1N5228B diode is about –2 mV/°C and for the Accuracy”; Electronics, June 16, 1983.
1N5242B, about 1.6 mV/°C. These values are multiplied by
2. ON Semiconductor Zener Diode Manual, Series A,
the difference in TA from the 25°C value and either
1980.

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 FIGURES 1 thru 8 — Conditions: Single Pulse, TA = 25°C, VZ IZT = 1/4 PD (Max) Each device normalized to VZ at TE.

AXIAL LEAD PACKAGES: MOUNTING STANDARD GRAYHILL CLIPS

1.06 1.06
VZ , ZENER VOLTAGE (NORMALIZED)

VZ , ZENER VOLTAGE (NORMALIZED)

1.04 1.04

1.02 VZ = 3.9 V 1.02 VZ = 3.9 V

1 1
6.2 V 6.2 V
0.98 12 V 0.98
12 V
0.96 75 V 0.96

0.94 0.94

0.92 0.92
1 4 10 40 100 400 1K 4K 10K 40K 100K 1 4 10 40 100 400 1K 4K 10K 40K100K
PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms)

Figure 1. DO-35 (Glass) 500 mW Device Figure 2. DO-41 (Glass) 1 Watt Device

1.06 1.06
VZ , ZENER VOLTAGE (NORMALIZED)
VZ , ZENER VOLTAGE (NORMALIZED)

VZ = 3.9 V
1.04 1.04

1.02 VZ = 3.3 V 1.02

1 6.2 V 1

0.98 0.98 6V
12 V
0.96 0.96 13 V

0.94 0.94 68 V 150 V

0.92 0.92
1 4 10 40 100 400 1K 4K 10K 40K 100K 1 4 10 40 100 400 1K 4K 10K 40K100K
PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms)

Figure 3. DO-41 (Plastic) 1.5 Watt Device Figure 4. Case 17 (Plastic) 5 Watt Device

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 THREE MOUNTING METHODS: DO-35 AND DO-41

1.022 1.004
MOUNTINGS:

VZ , ZENER VOLTAGE (NORMALIZED)

1N4742A
1.018 1 GRAYHILL CLIPS
VZ = 12 V STANDARD, L = 11/16″
MOUNTINGS: MODIFIED, L = 3/8″
1.014 0.996
GRAYHILL CLIPS
1N5228B (VZ = 3.9 V) MODIFIED, L = 3/8″
1.012 0.992
STANDARD,
L = 11/16″ ON SEMICONDUCTOR
0.988
1.008 FIXTURE
VZ , ZENER VOLTAGE (NORMALIZED)

L = 1/2″
0.984
1.004
ON SEMICONDUCTOR 0.98
1 FIXTURE L = 1/2″
0.976
0.996 1 4 10 40 100 400 1K 4K 10K 40K 100K
PW, PULSE WIDTH (ms)
0.992 GRAYHILL CLIPS MODIFIED
STANDARD, L = 11/16″ L = 3/8″ Figure 6. DO-41 (Glass) 1 Watt Device
0.988

0.984

0.98 1N5242B (VZ = 12 V)

0.976

0.972 MOUNTING FIXTURE

0.968
1 4 10 40 100 400 1K 4K 10K 40K 100K
PW, PULSE WIDTH (ms) 1.69

Figure 5. DO-35 (Glass) 500 mW Device

.75

1.41

2.31

.78

Figure 7. Standard Grayhill Clips

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 START SW +12 V
S1 TIMING WAVEFORMS
P.W.
CONTROL GATE
+12 V
5M G1D
+12 V R3 T2 ≈ 0.6C2 (R2 + R3)
0.1 10 k >10 SEC
ONE G2A
VDD SHOT
R2 100 k
1A 0.001 µF C2
1B
FREE 1C G2C 200 µs
RUN 1D
C3 1
100 ≈2 R1 R1 G2D
100 k
S3
C4
MODE 2 PULSE 100 µs
C1 SEL SW WIDTH G3A
S2A C5 MV
T1 ≈ 2.2R1C1
3
S2B SEE 100 µs 100 µs
C15 TABLE 1 G3C
MC14001
1N914 13

VCC ≤ 250 V
+12 V U3 +12 V +12 V
U3
3/4 MC14001
1/2 MC14001
1k Q5B
MJE
VDD 680 k EXTENDED POWERPULSE MV 330 k Q5A 5850
0.001 µF MJE35
510 pF
2A 0.001 µF 1N914
2B 510 pF 12 k
2C SAMPLE GATE MV 68 k
3C 2W
3D

444
27 k 47 k RC
+12 V Q4
200 µs
*FOR DUT
CURRENTS:
+12 V +12 V 200 mA ≤ IZT ≤ 2 A

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100 µs 0.001 1N914 DUT
DELAY MV µF 22 k
47 k VCC ≤ 250 V
0.001 µF VDD 330 k 47 k
Q1
3A 2N3906
3B 47 k
510 pF
27 k
VCC ≤ 250 V 10 k
+12 V

1/4 MC14001 -12 V 33 pF 1N914

Figure 8. Zener Voltage Double Pulsing S/H Test Circuit

U2
1/2 MC14001 22 k 1k
U3 12 k Q5A*
1N914
2D Q3 MJE350 +12 V +12 V
2N ZERO
100 k 1N914 CONTROL
3906 S4
22 pF 68 k 25 k + 12 V
2W U4
27 k 4.7 k 12 k RC MC1741 0.1 µF
Q2
R5 VIN 0.1 µF
+ S D
Q4 ** +
- 2N4856
**Tek Current Probe DUT R6 10 k - K
**P6302/AM503 0.1 µF VO =
10 k
0.1 µF 0.1 VIN
-12 V µF
VIN (10 k) VIN U5 -12 V
MPSA42 VIN = = LF155J
R5 + 10 k K
POWER AMPLIFER
 APPENDIX A
Recommended Incoming Inspection Procedures
Zener Voltage Testing
Pulsed versus Thermal Equilibrium

This section is primarily for use of incoming inspection stable junction temperatures). The device should also be
groups. The subject covered is the measurement of zener powered from a constant current source to limit changes of
voltage (VZ) and the inherent difficulty of establishing power dissipated and impedance.
correlation between supplier and buyer when using pulsed All of the above leads us to an understanding of why
test techniques. This difficulty, in part, is due to the various pulse testers will give differing VZ readings; these
interpretation of the data taken from the variety of available differences are, in part, due to the time duration of test (pulse
testers and in some cases even from the same model types. width), duty cycle when data logging, contact resistance,
It is therefore, our intent to define and reestablish a tolerance, temperature, etc. To resolve all of this, one only
standardized method of measurement to achieve correlation needs a reference standard to compare their pulsed results
no matter what test techniques are being used. This against and then adjust their limits to reflect those
standardization will guarantee your acceptance of good differences. It should be noted that in a large percentage of
product while maintaining reliable correlation. applications the zener diode is used in thermal equilibrium.
ON Semiconductor guarantees all of it’s axial leaded
DEFINITION OF TERMS zener products (unless otherwise specified) to be within
Temperature Coefficient (TC): specification ninety (90) seconds after the application of
power while holding the lead temperatures at 30 ± 1°C, 3/8
The temperature stability of zener voltages is sometimes
of an inch from the device body, any fixture that will meet
expressed by means of the temperature coefficient (TC).
that criteria will correlate. 30°C was selected over the
This parameter is usually defined as the percent voltage
normally specified 25°C because of its ease of maintenance
change across the device per degree centigrade, or as a
(no environmental chambers required) in a normal room
specific voltage change per degree centigrade. Temperature
ambient. A few degrees variation should have negligible
changes during test are due to the self heating effects caused
effect in most cases. Hence, a moderate to large heatsink in
by the dissipation of power in the zener junction. The VZ will
most room ambients should suffice.
change due to this temperature change and will exhibit a
Also, it is advisable to limit extraneous air movements
positive or negative TC, depending on the zener voltage.
across the device under test as this could change thermal
Generally, devices with a zener voltage below five volts will
equilibrium enough to affect correlation.
have a negative TC and devices above five volts will exhibit
a positive TC. SETTING PULSED TESTER LIMITS
Thermal Equilibrium (TE) Pulsed test techniques do not allow a sufficient time for
Thermal equilibrium (TE) is reached when the diode zener junctions to reach TE. Hence, the limits need to be set
junction temperature has stabilized and no further change at different values to reflect the VZ at lower junction
will occur. In thermal equilibrium, the heat generated at the temperatures. Since there are many varieties of test systems
junction is removed as rapidly as it is created, hence, no and possible heatsinks, the way to establish these limits is to
further temperature changes. actually measure both TE and pulsed VZ on a serialized
sample for correlation.
MEASURING ZENER VOLTAGE The following examples show typical delta changes in
pulsed versus TE readings. The actual values you use for
The zener voltage, being a temperature dependent pulsed conditions will depend on your tester. Note, that there
parameter, needs to be controlled for valid VZ correlation. are examples for both positive and negative temperature
Therefore, so that a common base of comparison can be coefficients. When setting the computer limits for a positive
established, a reliable measure of VZ can only occur when TC device, the largest difference is subtracted from the
all possible variables are held constant. This common base upper limit and the smallest difference is subtracted from the
is achieved when the device under test has had sufficient lower limit. In the negative coefficient example the largest
time to reach thermal equilibrium (heatsinking is required to change is added to the lower limit and the smallest change
stabilize the lead or case temperature to a specified value for is added to the upper limit.

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ON Semiconductor Zeners • Thermal equilibrium specifications:
• Thermal equilibrium specifications: VZ at 10 mA, 2.7 V minimum, 3.3 V maximum:
VZ at 10 mA, 9 V minimum, 11 V maximum: (Negative TC)
(Positive TC)
TE Pulsed Difference
TE Pulsed Difference 2.78 V 2.83 V +0.05 V
2.84 V 2.91 V +0.07 V
9.53 V 9.45 V –0.08 V
2.78 V 2.84 V +0.05 V
9.35 V 9.38 V –0.07 V
2.86 V 2.93 V +0.07 V
9.46 V 9.83 V –0.08 V
2.82 V 2.87 V +0.05 V
9.56 V 9.49 V –0.07 V
9.50 V 9.40 V –0.10 V Computer test limits:
Computer test limits: Set VZ min. limit at 2.7 V + 0.07 V = 2.77 V
Set VZ max. limit at 11 V – 0.10 V = 10.9 V Set VZ max. limit at 3.3 V + 0.05 V = 3.35 V
Set VZ min. limit at 9 V – 0.07 V = 8.93 V

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 ON SEMICONDUCTOR MAJOR WORLDWIDE SALES OFFICES
UNITED STATES CANADA INTERNATIONAL (continued)
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TEXAS INDIA
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UTAH ISRAEL N. AMERICAN TECHNICAL SUPPORT
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 ON SEMICONDUCTOR STANDARD DOCUMENT TYPE DEFINITIONS

DATA SHEET CLASSIFICATIONS

A Data Sheet is the fundamental publication for each individual product/device, or series of products/devices, containing detailed
parametric information and any other key information needed in using, designing–in or purchasing of the product(s)/device(s) it describes.
Below are the three classifications of Data Sheet: Product Preview; Advance Information; and Fully Released Technical Data
PRODUCT PREVIEW
A Product Preview is a summary document for a product/device under consideration or in the early stages of development. The
Product Preview exists only until an “Advance Information” document is published that replaces it. The Product Preview is often
used as the first section or chapter in a corresponding reference manual. The Product Preview displays the following disclaimer at
the bottom of the first page: “This document contains information on a product under development. ON Semiconductor reserves the
right to change or discontinue this product without notice.”
ADVANCE INFORMATION
The Advance Information document is for a device that is NOT fully qualified, but is in the final stages of the release process,
and for which production is eminent. While the commitment has been made to produce the device, final characterization and
qualification may not be complete. The Advance Information document is replaced with the “Fully Released Technical Data”
document once the device/part becomes fully qualified. The Advance Information document displays the following disclaimer at
the bottom of the first page: “This document contains information on a new product. Specifications and information herein are subject
to change without notice.”
FULLY RELEASED TECHNICAL DATA
The Fully Released Technical Data document is for a product/device that is in full production (i.e., fully released). It replaces the
Advance Information document and represents a part that is fully qualified. The Fully Released Technical Data document is virtually
the same document as the Product Preview and the Advance Information document with the exception that it provides information
that is unavailable for a product in the early phases of development, such as complete parametric characterization data. The Fully
Released Technical Data document is also a more comprehensive document than either of its earlier incarnations. This document
displays no disclaimer, and while it may be informally referred to as a “data sheet,” it is not labeled as such.
DATA BOOK
A Data Book is a publication that contains primarily a collection of Data Sheets, general family and/or parametric information,
Application Notes and any other information needed as reference or support material for the Data Sheets. It may also contain cross reference
or selector guide information, detailed quality and reliability information, packaging and case outline information, etc.
APPLICATION NOTE
An Application Note is a document that contains real–world application information about how a specific ON Semiconductor
device/product is used, or information that is pertinent to its use. It is designed to address a particular technical issue. Parts and/or software
must already exist and be available.
SELECTOR GUIDE
A Selector Guide is a document published, generally at set intervals, that contains key line–item, device–specific information for
particular products or families. The Selector Guide is designed to be a quick reference tool that will assist a customer in determining the
availability of a particular device, along with its key parameters and available packaging options. In essence, it allows a customer to quickly
“select” a device. For detailed design and parametric information, the customer would then refer to the device’s Data Sheet. The Master
Components Selector Guide (SG388/D) is a listing of ALL currently available ON Semiconductor devices.
REFERENCE MANUAL
A Reference Manual is a publication that contains a comprehensive system or device–specific descriptions of the structure and function
(operation) of a particular part/system; used overwhelmingly to describe the functionality or application of a device, series of devices or
device category. Procedural information in a Reference Manual is limited to less than 40 percent (usually much less).
HANDBOOK
A Handbook is a publication that contains a collection of information on almost any give subject which does not fall into the Reference
Manual definition. The subject matter can consist of information ranging from a device specific design information, to system design, to
quality and reliability information.
ADDENDUM
A documentation Addendum is a supplemental publication that contains missing information or replaces preliminary information in the
primary publication it supports. Individual addendum items are published cumulatively. The Addendum is destroyed upon the next revision
of the primary document.

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 DLD601/D
Rev. 1, Mar-2001

One-Gate Logic

One-Gate Logic
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