Transistor Circuit Configurations

A transistor is a 3-terminal device but in transistor operation, four terminals are required: two for
input and two for output. This means that one of the terminals must be made common to both
input and output. There are three types of configurations:
(i) Common Base (CB) (II) common emitter (CE) (iii) common collector (CC)

Common Base (CB)

E C
A change in emitter current produces
NPN
similar change in collector current due IE IC
to change in diffusion of electrons or
holes across the junctions. The VIN
impedance of the two circuits are B
RL VOUT
different thus some voltage and power
gains can be achieved since a current IB
variation in the low resistance emitter - + - +
base circuit has similar current
variation in the high resistance
collector base circuit. VEE VCC

dc = -IC/IE (negative sign due to flow of IC Fig 1.9a Common Base Configuration Circuit
into the transistor and IE out of the transistor)

Ignoring –ve sign dc = IC/IE

ac = -IC/IE where VCB is constant

For all practical purposes dc and ac have the same values. The higher the value of  the
better the transistor action since IC ranges from 0.95 to 0.99. Collector current is made up of
two parts (i) The component dependent upon the emitter current ( IC) which is produced by the
normal (majority carriers) transistor action and (II) the leakage current (ICBO or ICO) due to the
movement of minority carriers across the base collector junction on account of it being reversed
biased. Thus the leakage current flows in the direction of I C and ICO is extremely temperature
dependent and is made up of thermally generated minority carriers.
Total collector current

IC = IE + ICO … (14)

 = (IC – ICO)/ IE IC/IE (ICO being negligible) … (15)

IB = IE – IC … (16)

= IE – (IE + ICO)

IB = (1 – ) IE – ICO … (17)

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Characteristics of a Common Base Configuration
The performance of a transistor when connected in a circuit may be determine from their
characteristic curves that relate different dc currents and voltages of a transistor.

Fig 1.9b Circuit arrangement for determination of Input output characteristic curves of a
transistor in a CB configuration
Such curves are known as static curves. There are two important characteristics of a transistor:
The input characteristics and the output characteristics. Both of which are determined using fig
1.9.
Input characteristics
This is the curve drawn between IE & VEB for a given value of VCB (I,e, VCB is maintained
constant). VEB is set a several convenient levels at which IE is notedl, Then a curve is plotted of
IE vs VEB. This value is used to determine
the input resistance of the transistor
(which is the reciprocal of the slope).
rin = VEB /IE (VCB Constant)
Since a small increase in VEB causes a
large increase in IE, rin is quite low, here
the value of rin varies from point to point
because the curve is non linear. But rin’s
value over the linear part is about 100
and even large at lower VEB. This
dependence of rin on VEB causes signal
distortion.

Fig 1.10: Input characteristics for a CB NPN transistor

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Output Characteristics
This is the curve plotted of IC vs VCB for a given value of emitter current IE (i.e. IE constant)
(i) IC varies with VCB only for very low voltage below 1V. but transistor is never operated in
this region.
(ii) In active region (emitter forward biased and collector reverse biased) collector current is
almost equal to emitter current and appears to remain constant when VCB is
increased. IC is slightly lesser than IE. Transistors are normally operated in the active
region.
(iii) Although IC is practically independent of VCB over the active region. If VCB is increased
over a certain value, IC eventually increases rapidly because of avalanche or zener
effects. This condition is known as punch through or reach through and it causes
large currents to flow that can destroy the transistor. This is as a result of the
extension of the depletion layer am dos a direct consequence of increased VCB.
(iv) Very large change in collector voltage causes very small change in collector current
because output resistance is very high
rout = VCB/IC (IE constant)
(v) In cutoff region (where both sides are reversed biased) small collector current flows
(called ICBO or ICO leakage current) even when the emitter current is 0 i.e IE = 0.
(vi) In saturation region, where both junction are forward biased, the collector current IC flows
even when VCB = 0, because there is still a potential barrier existing at the collector
base junction and this assists in the flow IC. To stop it, the collector base junction has
to be forward biased, consequently the collector current IC is reduced to zero when
VCB is increased negatively.
It has been determined that a small signal voltage impressed on the low resistance input
(emitter) circuit of a
transistor causes a
relatively large emitter
current. Almost the same
amount of current will
flow in the high
resistance output
(collector) circuit of
transistors where the
voltage may be very high.
Evidently, then both the
output voltage and power
can be quite large as
compared to the tiny
input voltage and power
present at the emitter.
Fig 1.11: Output characteristics for a CB NPN transistor
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Current gain characteristics.
This is also referred to as the forward transfer characteristics, can be determined by keeping
VCB constant at a convenient value and recording IC value measured for different settings of IE
and then plotting IC vs IE. A vertical line is drawn through a selected value of VCB and
corresponding values of IE and IC are read off along thin line. A graph is plotted between IC and
IE and the values labeled with the VCB used.
Note that for IE = 2mA, the line (representing IC) is always less than 2mA. Similarly for all values
of IE, IC < IE.

Fig 1.12 Current Gain Characteristics for Common Base NPN Transistor
Question:

Common Emitter Configuration C

The bias voltages are applied between IC
the base emitter and the collector B NPN
emitter. The emitter base junction is IB
forward biased; the base is made more
VIN RL VOUT
positive than the emitter by VBB. The E
collector emitter is reverse biased; the
IE
collector is made more positive than the + - - +
emitter by VCC. The base current IB
flows in the input circuit and the VCC
collector current flows in the output
VEE
circuit. Fig 1.13a Common Emitter Configuration Circuit

The current gain between the input and the output is obtained because the input resistance is
lesser than the output resistance, therefore there is high voltage and power gains. The common
emitter causes a reversal between the input and output signals.

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The common emitter configuration is commonly used because of its high voltage and power
gains and moderate output to input impedance ratio.
Base current amplification ratio  = change in collector current(output current) / change in base
current(input current)
 = IC/IB … (19)

In almost all transistors base current IB is usually 5% less than emitter current IE and so  is
usually higher than 20.  usually ranges from 20 to 100.

Also  = IC = IC = (IC/IE) =  … (20)

IB IE – IB 1 –(IB/IE) 1–
In CE configuration a small collector current floes even when the base current is zero i.e base
lead is open. This is the collector cut off current ICEO and must be larger than ICBO.
IE = IB + IC … (21)
& IC = IE + ICBO = (IB + IC) + ICBO or IC(1 – ) =  IB + ICBO

Or IC =  IB + ICBO … (22)
1– 1–
Total current IC = IB + ICEO … (23)
Comparing (22) and (23)
=  … (24)
1–
ICEO =  ICBO … (25)
1–
Substituting for ICEO in (23)
IC = IB +  ICBO = IB + ( + 1) ICBO … (26)
1–
From (26) 1/(1 – ) =  + 1
When no signal is applied, then the ratio of IC to IB is called dc, when signal is applied IC/IB is
called ac.

Characteristics of Common Emitter Configuration

This circuit is used in the determination of transistor emitter characteristic. The voltage is applied
between the base and emitter terminals and the output is taken from collector and emitter
terminals. Inputs and outputs voltages and currents are measured by voltmeters and ammeters
as shown.

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Fig 1.13: Circuit Arrangement for Determination of Input and Output Characteristics of a
Transistor in CE Configuration
Input Characteristics: is the curve drawn of IB vs VBE for a constant value of VCE.
(1) The input characteristics of CE are quite similar to those of forward biased diode.
(2) In comparison to Common Base Configuration, base (input) current increases less rapidly
with the increase in base voltage VBE, This means that the input resistance is larger in CE
than in CB arrangement, Initial non-linearity of curve make the input resistance to vary
from point to point, the linear part of the
curve is of the order of a few hundred
ohms.
(3) An increase in the VCE causes the IB to
be lower for a given level of VBE. As
more charge carriers from the emitter
flows across the collector base junction
because of the increased VCE; few flow
out through the base. The effect of VBE
on input characteristics is ignored.
The ratio of change of VBE to the resulting
change in IB at constant VBE is known as
dynamic input resistance (reciprocal of the
slope)
rin = VBE/IB (VCE constant) … (27)
Fig 1.14 Input Characteristics for Common Emitter NPN Transistor

Output Characteristics: is the curve drawn of IC vs VCE for a constant value of IB.
(1) IC varies with VCE for VCE values between 0 and 1V then becomes almost constant
independent of VCE. Transistors operate above1V

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 (2) The output characteristics of CE has a slope as when compared to CB almost horizontal
characteristics. This is means that the input resistance of CE is less than CB.
(3) In active region (collector junction reverse biased and emitter junction forward biased) for
small values of IB, the effect of collector voltage VC over IC is mall but for large values of IB
this effect increases but the difference is that IC is larger than IB. Therefore current gain is
larger than unity.
The transistor must always be operated in the active region when employed as an
amplifying device.
(4) With low values, ideally zero of VCE the transistor is said to be operated in saturated region
and in this region, base current IB does not cause a corresponding change in collector IC.
(5) With must higher VCE, the collector-base junction completely breaks down and because of
this avalanche breakdown, collector current IC increases rapidly and the transistor gets
damaged.
(6) In cutoff region, small amount of collector current I C flows even where base current IB = 0.
This is called ICEO. Since main current IC is zero. The transistor is said to be cutoff.
(7) Moderate output to input impedance ratio make this configuration ideal for coupling
between various transistor stages.
The ratio of change in collector-emitter voltage VCC to the change in collector current IC at
constant base current is known as dynamic
output resistance
rout = VCC/IC (IB constant) … (28)
(8) The output resistance of CE configuration
is less than that of CB as the slope of the
output resistance is more in this case. Its
value is of the order of 50k
(9) The output characteristics can be used to
determine the dc current gain  and the
as current gain 0
Dc current gain  = IC/IB … (29)
AC current gain 0 = IC/IB
(VCE constant)… (30)

Fig 1.15 Output Characteristics for Common Emitter NPN Transistor

Current Gain Characteristics can be determined from the output characteristics from the curve
drawn from IC vs IB, VCE kept constant.

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Fig 1.16 Current Gain Characteristics for CE NPN Transistor.

Common Collector Configuration

The input is applied between the base and the collector while the output is taken across emitter
and collector. The circuit is essentially the same as the CE configuration except that the load
resistor RL is now placed at the emitter circuit instead of the collector circuit. In this circuit, the
base current flows in the input while the emitter current flows in the output. So the change in
emitter current IE to the change in base current IB gives the current amplification factor , the
circuit provides nearly the same current gain as in the case of CE arrangement because IE 
IC.
With base current IB equal to ICO the emitter current IE is zero so no current flows in the load
resistor RL; with the increase in input current I the transistor passes through the active region
and finally reaches saturation. Almost all the supply voltage except for a small voltage drop
across the transistor appears across the load resistor RL.
Equations are: E
IC = IE + ICBO … (31)
IE
& IE = IB + IC = IB + IE + ICBO … (32)
B NPN
IB
Or IE (1 – ) = IB + ICBO … (33)
VIN RL VOUT
Or IE = IB + ICBO … (34) C
1– 1–
IC
= ( + 1)IB + ( + 1)ICBO … (35)
+ - + -
Current Gain  = IE /IB … (36) VBB VEE
Fig 1.17a Common Collector Configuration
Circuit 8
= IE = IE /IC = 1/ = 1 =+1 … (37)
IE – IC (IE /IC) -1 (1/) – 1 1–

Characteristics of Common Collector Configuration

The common collector arrangements give very high input impedance and very low output
impedance and therefore the voltage gain is always less than unity. Hence this configuration is
seldom used for amplification. However owing to its relatively high input impedance and low
output impedance, this configuration is used for impedance matching i.e for driving low
impedance source. This configuration is also called emitter follower.

Fig 1.17b Input Characteristics for Common Collector NPN Transistor

Fig 1.18 Output Characteristics for Common Collector NPN Transistor

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Table 1.3 Comparison of Characteristics of Transistors in Different Configurations
S/N Configuration Common Base Common Emitter Common Collector
Characteristics
(1) Input Low (about 100) Medium (about Very High (about
Impedance 800) 750k)
(2) Output Very High (about High (about 50k) Low (about 50)
Impedance 500k)
(3) Current Gain Less than unity but High (about 80) High (about 100)
usually more than
0.9 (about 0.98)
(4) Voltage Gain About 150 About 500 Less than unity
(5) Leakage Very small (0.5A Very large (500A Very large
Current for Ge and 1A for for Ge and 20A for
Si ) Si)
(6) Output Signal In phase with input Reverse In phase with input
Phase
(7) Applications For high frequency For Audio frequency For impedance
applications applications matching

Transistor Load Line (Using CE configuration)

The concept of load line is very important in understanding the working of a transistor. It is
defined as the locus of operating point on the output characteristic of the transistor. It is the line
on which the operating point moves when ac signal is applied to the transistor.
DC Load Lines
In the circuit VCC is the supply voltage to
collector, RC or RL is the collector
resistance or load resistance, and VCC is
the collector-to-emitter voltage. Applying
Kirchoff’s voltage law to the output or
collector circuit we have:
VCC = VCE + IC RC … (38)
Or IC = VCC – VCE = -VCE + VCC
RC RC RC
… (39)
Fig1.19 Common Emitter NPN Transistor Amplifier Circuit

This equation is to be plotted on the output characteristics of the transistor V CE or IC are variable.
Identify this equation with y = mx + c

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IC = -1 VCE + VCC where m = -1/RC (slope of the line), x = VCE; and c = VCC/RC
RC RC i.e. IC = VCC/RC (intercept of line on vertical axis); y = IC
From eq (38)
Consider the following particular situations
(i) When VCE = 0 then VCC = 0 + IC RC IC = VCC/RC … (40) (intercept pt A on IC y axis)
(ii) When IC = 0 then VCC = VCE = 0  VCC = VCE …(41)(intercept pt B on VCE x axis)

By joining these two points A and B, dc load line is obtained. The dc load line represents the
dynamic characteristic of the device and gives the values of collector current IC and collector-
emitter voltage corresponding to zero signal conditions.
Quiescent Point: This is a point on the dc load line which represents collector emitter voltage
VCE and collector current IC in the absence of ac signal. It is also called the operating point
because the variations in VCE and IC takes place about this point when signal is applied.
The best position for this point is midway between cutoff and saturation where V CE = ½ VCE.
Point Q is the quiescent point marked in the output characteristics curve, Selection of the
operatingpoint is done as per application for which the device is to be used. For example in the
case of a small signal amplifier in which power is conserved; operating point is selected so as to
give lowest quiescent value of IC. While for an amplifier operated to deliver small amount of
power, operating point is selected so that available quiescent current is about ½ of the
permissible collector current IC.

Fig 1.20 Common Emitter Transistor Output Characteristics with Dc and AC Load Lines

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AC Load Lines
When an ac signal is applied, the transistor voltage VCE and the collector current IC vary above
and below the quiescent point Q. So point Q is common to both dc and ac load lines.
The ac load line gives the values of collector current IC and collector-emitter voltage VCE
when ac signal is applied.
To draw the as load line, take a convenient collector current change IC and compute the
corresponding collector emitter change VCE = - ICRC to obtain another point lying on the ac
load line. Now the ac load line can be drawn by joining this point and point Q. AC load line is
steeper than dc load line, but the two lines intercept at the quiescent point Q determined by the
biasing dc voltages and currents. AC load line takes into account the ac load resistance while
the dc load line considers only the dc load resistance.

Table 1.4: Standard Notations for Voltages and Currents

S/N Particular DC or average RMS ac Instantaneous ac
1. Emitter current IE Ie ie
2. Base current IB Ib ib
3. Collector current IC Ic ic
4. Collector-emitter voltage VCE Vce vce
5. Emitter-base voltage VEB Veb veb
6. Collector-base voltage VCB Vcb vcb
7. Emitter supply voltage VEE - -
8. Base supply voltage VBB - -
9. Collector supply voltage VCC - -
10. Emitter voltage-to-ground VE Ve ve
11. Base voltage-to-ground VB Vb vb
12. Collector voltage-to-ground VC Vc vc

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