Scribd
Upload
11K views3 pages

Transition Capacitance

The document introduces transition capacitance in semiconductor junctions. It explains that transition capacitance (CT) represents the change in charge stored in the depletion region with respect to a change in junction voltage. CT is analogous to a parallel plate capacitor, with the width of the depletion region W representing the distance between plates. As reverse bias increases, W also increases, reducing the value of CT. Under forward bias, CT is negligible compared to diffusion capacitance CD.

Uploaded by

Vikas Chandra
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
11K views3 pages

Transition Capacitance

The document introduces transition capacitance in semiconductor junctions. It explains that transition capacitance (CT) represents the change in charge stored in the depletion region with respect to a change in junction voltage. CT is analogous to a parallel plate capacitor, with the width of the depletion region W representing the distance between plates. As reverse bias increases, W also increases, reducing the value of CT. Under forward bias, CT is negligible compared to diffusion capacitance CD.

Uploaded by

Vikas Chandra
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

AN INTRODUCTION TO “TRANSITION

CAPACITANCE”
BY VIKAS CHANDRA
III-SEM JABALPUR
17/12/2008
In the reverse bias region we have the transition or
depletion region capacitane (CT), whereas in the forward
bias region we have the diffusion (CD) or storage
capacitance.
The transition capacitance represents the change in
charge stored in the depletion region with respect to a
change in junction voltage.
The increase in the level of reverse bias caused the width
of the depletion region, W to increase. An increase in the
width of the depletion region, W is accompanied by
additional uncovered ions in the space charge or
transition region.
Because positive ions exist on one side of the junction
and negative ions on the other, the transition
capacitance, CT is analogous to a parallel plate capacitor
for which we have

CT=εA/w Farads

where
A= Junction area
ε= Permittivity of the semiconductor
We must note that w is a function area of the reversed
biased voltage so that transittion capacitance CT is
voltage dependent.
For a step graded junction, the width of the depletion
region, W is inversely proportional to the square root of
the reverse bias voltage.
Under forward biased condition, the value of transittion
capacitance is to small compared to diffusion capacitance
that it is generally neglected . Similarly in a reverse
biased diode, a small amount of carrier diffusion exists,
but this capacitance is negligible when compared to
transition capacatance.

Transition & Diffusion capacitance verse applied bias


for a silicon diode

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy