Experiment - 2

VI CHARCATERISTICS OF DIODE

Theory

Objectives

At the end of the experiment, the student should be able to

1. Explain the structure of a P-N junction diode
2. Explain the function of a P-N junction diode
3. Explain forward and reverse biased characteristics of a Silicon diode
4. Explain forward and reverse biased characteristics of a Germanium diode

Structure of P-N junction diode

The diode is a device formed from a junction of n-type and p-type

semiconductor material. The lead connected to the p-type material is called
the anode and the lead connected to the n-type material is the cathode. In
general, the cathode of a diode is marked by a solid line on the diode.
 Function of a P-N junction diode in Forward Bias

The positive terminal of battery is connected to the P side(anode) and the

negative terminal of battery is connected to the N side(cathode) of a diode,
the holes in the p-type region and the electrons in the n-type region are
pushed toward the junction and start to neutralize the depletion zone,
reducing its width. The positive potential applied to the p-type material repels
the holes, while the negative potential applied to the n-type material repels
the electrons. The change in potential between the p side and the n side
decreases or switches sign. With increasing forward-bias voltage, the
depletion zone eventually becomes thin enough that the zone's electric field
cannot counteract charge carrier motion across the p–n junction, which as a
consequence reduces electrical resistance. The electrons that cross the p–n
junction into the p-type material (or holes that cross into the n-type material)
will diffuse into the nearby neutral region. The amount of minority diffusion
in the near-neutral zones determines the amount of current that may flow
through the diode.
 Function of a P-N junction diode in Forward Bias

The positive terminal of battery is connected to the N side(cathode) and the

negative terminal of battery is connected to the P side(anode) of a diode.
Therefore, very little current will flow until the diode breaks down.

The positive terminal of battery is connected to the N side(cathode) and the

negative terminal of battery is connected to the P side(anode) of a diode, the
'holes' in the p-type material are pulled away from the junction, leaving
behind charged ions and causing the width of the depletion region to increase.
Likewise, because the n-type region is connected to the positive terminal, the
electrons will also be pulled away from the junction, with similar effect. This
increases the voltage barrier causing a high resistance to the flow of charge
carriers, thus allowing minimal electric current to cross the p–n junction. The
increase in resistance of the p–n junction results in the junction behaving as
an insulator.
The strength of the depletion zone electric field increases as the reverse-bias
voltage increases. Once the electric field intensity increases beyond a critical
level, the p–n junction depletion zone breaks down and current begins to
flow, usually by either the Zener or the avalanche breakdown processes. Both
of these breakdown processes are non-destructive and are reversible, as long
as the amount of current flowing does not reach levels that cause the
semiconductor material to overheat and cause thermal damage.
Forward and reverse biased characteristics of a Silicon diode

In forward biasing, the positive terminal of the battery is connected to the P

side and the negative terminal of the battery is connected to the N side of the
diode. The diode will conduct forward biasing because the forward biasing
will decrease the depletion region width and overcome the barrier potential.
In order to conduct, the forward biasing voltage should be greater than the
barrier potential. During forward biasing the diode acts like a closed switch
with a potential drop of nearly 0.6 V across it for a silicon diode. The forward
and reverse bias characteristics of a silicon diode. From the graph, you may
notice that the diode starts conducting when the forward bias voltage exceeds
around 0.6 volts (for Si diode). This voltage is called cut-in voltage.

In reverse biasing, the positive terminal of battery is connected to the N side

and the negative terminal of battery is connected to the P side of a diode. In
reverse biasing, the diode does not conduct electricity, since reverse biasing
leads to an increase in the depletion region width; hence current carrier
charges find it more difficult to overcome the barrier potential. The diode will
act like an open switch and there is no current flow.
 Diode Equation

In the forward-biased and reversed-biased regions, the current If nd the

voltage Vf of a semiconductor diode are related by the diode equation:

where,
Is is reverse saturation current or leakage current,
If is current through the diode(forward current),
Vf is potential difference across the diode terminals(forward voltage)
VT is thermal voltage, given by

and
k is Boltzmann’s constant = 1.38x10−23 J /°Kelvin,
q is the electronic charge = 1.6x10−19 joules/volt(Coulombs),
T is the absolute temperature in °Kelvin(°K = 273 + temperature in °C),At
room temperature (25 °C), the thermal voltage is about 25.7 mV,n is an
empirical constant between 0.5 and 2

The empirical constant, n, is a number that can vary according to the voltage
and current levels. It depends on electron drift, diffusion, and carrier
recombination in the depletion region. Among the quantities affecting the
value of n are the diode manufacture, levels of doping and purity of materials.

If n=1, the value of is 26 mV at 25°C.

When n=2, the value of becomes 52 mV. For germanium diodes, n is
usually considered to be close to 1. For silicon diodes, n is in the range of 1.3
to 1.6.
Procedure

Forward Bias-Ge Diode

1. Set DC voltage to 0.2 V .

2. Use the resistor of 1K ohms and a Germanium diode.
3. A voltmeter is placed parallel to the Germanium diode and ammeter series
with a resistor.
4. The positive terminal of the battery is connected to the P side(anode) and
the negative terminal of the battery is connected to the N side(cathode) of
the diode.
5. Now vary the voltage up to 30V and note the Voltmeter and Ammeter
reading for particular DC voltage.
6. Take the readings and note Voltmeter reading across Germanium diode
and Ammeter reading.
7. Plot the V-I graph and observe the change.
8. Therefore from the graph, we see that the diode starts conducting when
the forward bias voltage exceeds around 0.3 volts (for Ge diode). This
voltage is called cut-in voltage.
Reverse Bias-Si Diode

1. Set DC voltage to 0.2 V.

2. Select the diode.
3. Set the resistor.
4. A voltmeter is placed parallel to the Silicon diode and ammeter series
with a resistor.
5. The positive terminal of the battery is connected to the N side(cathode)
and the negative terminal of the battery is connected to the P side(anode)
of a diode.
6. Now vary the voltage up to 30V and note the Voltmeter and Ammeter
reading for DC voltage.
7. Take the readings and note Voltmeter reading across Silicon diode and
Ammeter reading.
8. Plot the V-I graph and observe the change.
Observations

Forward Bias-Ge Diode

Reverse Bias-Si Diode
Observation Table

Forward Bias-Ge Diode

No. Voltage(Volt) Current(mAmp)

1 0 0
2 0.280 1.90
3 0.288 3.90
4 0.293 5.90
5 0.297 7.90
6 0.300 9.90
7 0.302 11.9
8 0.304 13.9
9 0.306 15.9
10 0.307 17.9
11 0.308 19.9
12 0.310 21.9
13 0.311 23.9
14 0.312 25.9
15 0.313 27.9
16 0.314 29.9

Reverse Bias-Si Diode

No. Voltage(Volt) Current(mAmp)

1 0.161 0.100
2 1.03 0.100
3 1.93 0.100
4 2.85 0.100
5 3.77 0.100
6 4.71 0.100
7 9.45 0.100
8 14.3 0.100
9 19.1 15.5384
10 24.1 19.3846
11 29.0 23.2307
12 - -
13 - -
14 - -
15 - -
16 - -
LT Spice

Forward Bias

Circuit Daigram

Graph for V(n001)

Forward Bias

Graph for I(D1)

Reverse Bias

Circuit Daigram

Graph for V(n001)

Reverse Bias

Graph for I(D1)