EXPIREMENT – 1

NAME-DEV SUMMI
SAP ID- 1000014710
ROLL NO.- 200103900
•
• AIM- To Study VI Charecterstics of a diode
• THEORY –
Structure of P-N junction diode
The diode is a device formed from a junction of n-type and p-type semiconductor material.
The lead connected to the p-type material is called the anode and the lead connected to the n-
type material is the cathode. In general, the cathode of a diode is marked by a solid line on
the diode.

Figurer:1

Function of a P-N junction diode in Forward Bias

The positive terminal of battery is connected to the P side(anode) and the negative terminal
of battery is connected to the N side(cathode) of a diode, the holes in the p-type region and
the electrons in the n-type region are pushed toward the junction and start to neutralize the
depletion zone, reducing its width. The positive potential applied to the p-type material
repels the holes, while the negative potential applied to the n-type material repels the
electrons. The change in potential between the p side and the n side decreases or switches
sign. With increasing forward-bias voltage, the depletion zone eventually becomes thin
enough that the zone's electric field cannot counteract charge carrier motion across the p–n
junction, which as a consequence reduces electrical resistance. The electrons that cross the
p–n junction into the p-type material (or holes that cross into the n-type material) will diffuse
into the nearby neutral region. The amount of minority diffusion in the near-neutral zones
determines the amount of current that may flow through the diode.

Function of a P-N junction diode in Reverse Bias

The positive terminal of battery is connected to the N side(cathode) and the negative terminal
of battery is connected to the P side(anode) of a diode. Therefore, very little current will flow
until the diode breaks down.

The positive terminal of battery is connected to the N side(cathode) and the negative terminal
of battery is connected to the P side(anode) of a diode, the 'holes' in the p-type material are
pulled away from the junction, leaving behind charged ions and causing the width of the
depletion region to increase. Likewise, because the n-type region is connected to the positive
terminal, the electrons will also be pulled away from the junction, with similar effect. This
increases the voltage barrier causing a high resistance to the flow of charge carriers, thus
allowing minimal electric current to cross the p–n junction. The increase in resistance of the
p–n junction results in the junction behaving as an insulator.
The strength of the depletion zone electric field increases as the reverse-bias voltage increases.
Once the electric field intensity increases beyond a critical level, the p–n junction depletion
zone breaks down and current begins to flow, usually by either the Zener or the avalanche
breakdown processes. Both of these breakdown processes are non-destructive and are
reversible, as long as the amount of current flowing does not reach levels that cause the
semiconductor material to overheat and cause thermal damage.

Forward and reverse biased characteristics of a

Silicon diode
In forward biasing, the positive terminal of battery is connected to the P side and the negative
terminal of battery is connected to the N side of the diode. Diode will conduct in forward
biasing because the forward biasing will decrease the depletion region width and overcome
the barrier potential. In order to conduct, the forward biasing voltage should be greater than
the barrier potential. During forward biasing the diode acts like a closed switch with a potential
drop of nearly 0.6 V across it for a silicon diode. The forward and reverse bias characteristics
of a silicon diode. From the graph, you may notice that the diode starts conducting when the
forward bias voltage exceeds around 0.6 volts (for Si diode). This voltage is called cut-in
voltage.
In reverse biasing, the positive terminal of battery is connected to the N side and the negative
terminal of battery is connected to the P side of a diode. In reverse biasing, the diode does not
conduct electricity, since reverse biasing leads to an increase in the depletion region width;
hence current carrier charges find it more difficult to overcome the barrier potential. The diode
will act like an open switch and there is no current flow.

Forward and reverse biased characteristics of a

Germanium diode
In forward biasing, the positive terminal of battery is connected to the P side and the negative
terminal of battery is connected to the N side of the diode. Diode will conduct in forward
biasing because the forward biasing will decrease the depletion region width and overcome
the barrier potential. In order to conduct, the forward biasing voltage should be greater than
the barrier potential. During forward biasing the diode acts like a closed switch with a potential
drop of nearly 0.3 V across it for a germanium diode. The forward and reverse bias
characteristics of a germanium diode. From the graph, you may notice that the diode starts
conducting when the forward bias voltage exceeds around 0.3 volts (for Ge diode). This
voltage is called cut-in voltage.

In reverse biasing, the positive terminal of battery is connected to the N side and the negative
terminal of battery is connected to the P side of a diode. In reverse biasing, the diode does not
conduct electricity, since reverse biasing leads to an increase in the depletion region width;
hence current carrier charges find it more difficult to overcome the barrier potential. The diode
will act like an open switch and there is no current flow.

Diode Equation
In the forward-biased and reversed-biased regions, the current (IfIf), and the voltage (VfVf),
of a semiconductor diode are related by the diode equation:

If=Is×(expVfn×VT−1)If=Is×(expVfn×VT−1)

where,
IsIs is reverse saturation current or leakage current,
IfIf is current through the diode(forward current),
VfVf is potential difference across the diode terminals(forward voltage)
VTVT is thermal voltage, given by
VT=k×TqVT=k×Tq

and
k is Boltzmann’s constant = 1.38x10−23 J /°Kelvin,
q is the electronic charge = 1.6x10−19 joules/volt(Coulombs),
T is the absolute temperature in °Kelvin(°K = 273 + temperature in °C),
At room temperature (25 °C), the thermal voltage is about 25.7 mV,
n is an empirical constant between 0.5 and 2

The empirical constant, n, is a number that can vary according to the voltage and current
levels. It depends on electron drift, diffusion, and carrier recombination in the depletion
region. Among the quantities affecting the value of n are the diode manufacture, levels of
doping and purity of materials.

If n=1, the value of k×Tqk×Tq is 26 mV at 25°C.

When n=2, the value of k×Tqk×Tq becomes 52 mV. For germanium diodes, n is usually
considered to be close to 1. For silicon diodes, n is in the range of 1.3 to 1.6.

PROCEDURE
• Forward Bias-Si Diode
1. Set DC voltage to 0.2 V .
2. Select the diode.
3. Set the resistor.
4. Voltmeter is placed parallel to Silicon diode and ammeter series with resistor.
5. The positive side of battery to the P side(anode) and the negative of battery to
the N side(cathode) of the diode.
 6. Now vary the voltage upto 5V and note the Voltmeter and Ammeter reading for
particular DC voltage .
7. Take the readings and note Voltmeter reading across Silicon diode and
Ammeter reading.
8. Plot the V-I graph and observe the change.
9. Calculate the dynamic resistance of the diode. rd=ΔV/ΔI
10.Therefore from the graph we see that the diode starts conducting when the
forward bias voltage exceeds around 0.6 volts (for Si diode). This voltage is
called cut-in voltage.

• Reverse Bias-Si Diode

1. Set DC voltage to 0.2 V .
2. Select the diode.
3. Set the resistor.
4. Voltmeter is placed parallel to Silicon diode and ammeter series with resistor.
5. The positive terminal of battery is connected to the N side(cathode) and the
negative terminal of battery is connected to the P side(anode) of a diode.
6. Now vary the voltage upto 30V and note the Voltmeter and Ammeter reading
for DC voltage .
7. Take the readings and note Voltmeter reading across Silicon diode and
Ammeter reading.
8. Plot the V-I graph and observe the change.
• Forward Bias-Ge Diode
1. Set DC voltage to 0.2 V .
2. Use the resistor of 1K ohms and a Germanium diode.
3. Voltmeter is placed parallel to Germanium diode and ammeter series with
resistor.
4. The positive terminal of battery is connected to the P side(anode) and the
negative terminal of battery is connected to the N side(cathode) of the diode.
5. Now vary the voltage upto 30V and note the Voltmeter and Ammeter reading
for particular DC voltage .
6. Take the readings and note Voltmeter reading across Germanium diode and
Ammeter reading.
7. Plot the V-I graph and observe the change.
8. Therefore from the graph we see that the diode starts conducting when the
forward bias voltage exceeds around 0.3 volts (for Ge diode). This voltage is
called cut-in voltage.
• Reverse Bias-Ge Diode
1. Set DC voltage to 0.2 V .
2. Use the resistor of 1K ohms and a Germanium diode.
3. Voltmeter is placed parallel to Germanium diode and ammeter series with
resistor.
4. The positive terminal of battery is connected to the N side(cathode) and the
negative terminal of battery is connected to the P side(anode) of a diode.
5. Now vary the voltage upto 30V and note the Voltmeter and Ammeter reading
for DC voltage .
6. Take the readings and note Voltmeter reading across Silicon diode and
Ammeter reading.
7. Plot the V-I graph and observe the change.

SIMULATION
2/11/2021 Forward Biased-Silicon Diode

Forward Bias Silicon Diode

INSTRUCTION
CONTROLS
12 18
6 24
0 30 Select Diode: 1N4001 VF 0.6
EXPERIMENTAL TABLE R 1292 A 3.40 DC volt : Volt
Resistance : ohms
Serial Forward Forward
No. Voltage(Volt) Current(mAmp)
1 0 0 1 Add to Table Plot Clear

2 0.526 0.155 0 2
3 0.529 0.232 V 0.574
4 0.535 0.387
5 0.539 0.542 Print It Check for Reverse Bias
6 0.541 0.619
7 0.543 0.696
8 0.546 0.851 VDC 5
9 0.550 1.08
10 0.553 1.24
11 0.555 1.39
12 0.558 1.63
13 0.561 1.86
14 0.563 2.09
15 0.565 2.24

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2/11/2021 Forward Biased-Silicon Diode

Forward Bias Silicon Diode

INSTRUCTION
12 18 CONTROLS
6 24
0 30

4.61
Select Diode: 1N4001
7 8
EXPERIMENTAL TABLE DC volt :
Resistance :
3 4 1
Serial Forward Forward 10
954
No. Voltage(Volt) Current(mAmp) 0 2
1 0 0 Add to Table Plot

2 0.531 0.105 5 6
3 0.534 0.210 0.582
4 0.543 0.524
Check
5 0.549 0.838 connection
11
6 0.554 1.15
7 0.557 1.36 Print It Check for
1 9
8 0.561 1.68 5
9 0.564 1.99 12
10 0.567 2.31
11 0.569 2.62
12 0.572 2.93
13 0.574 3.25
14 0.576 3.56
15 0.578 3.88

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2/11/2021 Reverse Biased

Reverse Bias – Silicon Diode

INSTRUCTION
CONTROLS
8
4 12
0 16 Select Diode: Choose Diode VR Value
R 1153
EXPERIMENTAL TABLE A 0.100 DC volt : Volt
Resistance : ohms
Serial Reverse Reverse
No. Voltage(Volt) Current(μAmp)
1 0.161 0.100 1 Add to Table Plot Clear

2 1.57 0.100 0 2
3 3.17 0.100 V 29.0
4 4.80 0.100
5 6.31 0.100 Print It
6 7.97 0.100
7 9.54 0.100
8 11.2 0.100 VDC 30.2
9 13.2 0.100
10 14.9 0.100
11 16.6 0.100
12 18.2 0.100
13 19.9 0.100
14 21.3 0.100
15 23.2 0.100

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2/11/2021 Reverse Biased

Reverse Bias – Silicon Diode

INSTRUCTION 8
4 12 CONTROLS
0 16

23.2129131 Select Diode: 1N4001 VR

7 8
EXPERIMENTAL TABLE DC volt :
1 Resistance :
Serial Reverse Reverse 3 1001 4 10
No. Voltage(Volt) Current(μAmp) 0 2

1 0.161 0.100 Add to Table Plot

5 6
2 1.12 0.100
29.0 Check
3 1.25 0.100
connection
4 1.34 0.100
5 2.16 0.100 Print It
11
6 2.85 0.100
7 4.33 0.100 1 9
30.2
8 6.12 0.100
9 7.64 0.100 12
10 9.88 0.100
11 11.3 0.100
12 12.7 0.100
13 14.4 0.100
14 16.0 0.100
15 17.5 0.100

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2/11/2021 Forward Biased-Ge Diode

Forward Bias – Germanium Diode

INSTRUCTION
CONTROLS
12 18
6 24
0 30 DC volt : Volt
EXPERIMENTAL TABLE R 1 A 29.6 Resistance : Kohms

Serial Forward Forward

No. Voltage(Volt) Current(mAmp)
1 0 0 1 Add to Table Plot Clear

2 0.278 1.60 0 2
3 0.288 3.95 V 0.314
4 0.294 6.15
5 0.297 7.75 Print It
6 0.300 10.1
7 0.303 12.5
8 0.305 14.6 VDC 29.85
9 0.307 17.1
10 0.308 19.1
11 0.309 20.8
12 0.310 23.3
13 0.312 25.3
14 0.314 29.6

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2/11/2021 Reverse Biased-Ge Diode

Reverse Bias – Germanium Diode

INSTRUCTION
CONTROLS
8
4 12
0 16 DC volt : Volt
R 1
EXPERIMENTAL TABLE A 30000 Resistance : Kohms

Serial Reverse Reverse

No. Voltage(Volt) Current(μAmp)
1 0.200 0 1 Add to Table Plot Clear

2 2.20 0 0 2
3 4.50 0 V 30.0
4 6.30 0
5 7.90 0 Print It
6 10.1 0
7 11.7 0
8 13.4 0 VDC 30
9 14.9 0
10 16.8 0
11 18.9 0
12 20.9 0
13 22.9 0
14 25.6 0
15 27.9 0

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RESULT
The study has been successfully completed.