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NPN Silicon RF Power Transistor: Description: ASI 2N3375 Package Style To-60 (Isolated)

This document provides a summary of the specifications and features of the ASI 2N3375 NPN silicon RF power transistor. The transistor is designed for applications such as amplifiers, oscillators, and drivers in the VHF-UHF region. It has a maximum collector current of 1.5 A, collector-emitter voltage of 40 V, and power dissipation of 11.6 W at 25°C ambient temperature. Key characteristics include a current gain of at least 10, saturation voltage of 1 V or less, and operating frequencies up to 500 MHz.

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Andressa Tavares Carvalho
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76 views1 page

NPN Silicon RF Power Transistor: Description: ASI 2N3375 Package Style To-60 (Isolated)

This document provides a summary of the specifications and features of the ASI 2N3375 NPN silicon RF power transistor. The transistor is designed for applications such as amplifiers, oscillators, and drivers in the VHF-UHF region. It has a maximum collector current of 1.5 A, collector-emitter voltage of 40 V, and power dissipation of 11.6 W at 25°C ambient temperature. Key characteristics include a current gain of at least 10, saturation voltage of 1 V or less, and operating frequencies up to 500 MHz.

Uploaded by

Andressa Tavares Carvalho
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2N3375

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI 2N3375 is Designed for
Class A,B,C Amplifier,Oscillator and PACKAGE STYLE TO- 60(ISOLATED)
Driver Applications Covering the
VHF-UHF Region.

FEATURES INCLUDE:
• Isolated Package

MAXIMUM RATINGS
IC 1.5 A
VCE 40 V
O
PDISS 11.6 W @ TC = 25 C
O O
TJ -65 C to +200 C
O O
TSTG -65 C to +200 C
1 = EMITTER 2 = BASE
O
θJC 15 C/W 3 = COLLECTOR

CHARACTERISTICS O
TC = 25 C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 40 V
BVCEX VBE = -1.5 V IC = 100 mA 65 V
BVCBO IC = 500 µA 65 V
ICEO VCE = 30 V 100 µA
IEBO VEB = 4.0 V 100 µA
hFE VCE = 5.0 V IC = 250 mA 10 ---
VCE(SAT) IC = 500 mA IB = 100 mA 1.0 V

Cob VCB = 30 V f = 1.0 MHz 10 pF


ft VCE = 28 V IC = 150 mA f = 100 MHz 500 MHz

Pout 3.0 W
GP VCE = 28 V Pin = 1.0 W f = 400 MHz dB
4.8
η 40 %

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice.

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