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NTE2389 Mosfet N CH, Enhancement Mode High Speed Switch TO220 Type Package

This document provides specifications for an NTE2389 MOSFET, which is an N-channel enhancement mode transistor in a TO220 package. It lists maximum ratings and electrical characteristics including breakdown voltage, threshold voltage, on-resistance, switching times, and reverse recovery properties. The MOSFET is suitable for high-speed switching applications with a continuous drain current rating of 35A.

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73 views2 pages

NTE2389 Mosfet N CH, Enhancement Mode High Speed Switch TO220 Type Package

This document provides specifications for an NTE2389 MOSFET, which is an N-channel enhancement mode transistor in a TO220 package. It lists maximum ratings and electrical characteristics including breakdown voltage, threshold voltage, on-resistance, switching times, and reverse recovery properties. The MOSFET is suitable for high-speed switching applications with a continuous drain current rating of 35A.

Uploaded by

toroal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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NTE2389

MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO220 Type Package
Absolute Maximum Ratings: (TA = +25mC unless otherwise specified)
Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain−Gate Voltage (RGS = 20kW), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152A
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . W30V
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175mC
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55m to +175mC
Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2mC/W
Typical Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mC/W

Electrical Characteristics: (TA = +25mC unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit
Static Ratings
Drain−Source Breakdown Voltage BVDSS ID = 0.25mA, VGS = 0 60 − − V
Gate Threshold Voltage VGS(th) ID = 1mA, VDS = VGS 2.1 3.0 4.0 V
Zero Gate Voltage Drain Current IDSS VDS = 60V, TJ = +25mC − 1 10 mA
VGS = 0
TJ = +125mC − 0.1 1.0 mA
Gate−Source Leakage Current IGSS VGS = W30V, VDS = 0 − 10 100 nA
Drain−Source On−State Resistance RDS(on) ID = 20A, VGS = 10V − 40 45 mW
Dynamic Ratings
Forward Transconductance gfs ID = 20A, VDS = 25V 8 13.5 − mhos
Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz − 1650 2000 pF
Output Capacitance Coss − 560 750 pF
Reverse Transfer Capacitance Crss − 300 400 pF
Rev. 10−13
Electrical Characteristics (Cont’d): (TA = +25mC unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Ratings (Cont’d)
Turn−On Time td (on) VCC = 30V, VGS = 10V, − 25 40 ns
tr ID = 3A, RGS = 50W − 60 90 ns
Turn−Off Time td (off) − 125 160 ns
tf − 100 130 ns
Internal Drain Inductance Ld Measured from contact screw − 3.5 − nH
on tab to center of die
Measured from drain lead 6mm − 4.5 − nH
from package to center of die
Internal Source Inductance Ls Measured from source lead − 7.5 − nH
6mm from package to source
bond pad
Reverse Diode
Continuous Reverse Drain Current IDR − − 41 A
Pulsed Reverse Drain Current IDRM − − 164 A
Diode Forward On−Voltage VSD IF = 41A, VGS = 0 − 1.4 2.0 V
Reverse Recovery Time trr IF = 41A, VGS = 0, VR = 30V − 60 − ns
−diF/dt = 100A/ms
Reverse Recovery Charge Qrr − 0.3 − mC

.420 (10.67) D
Max

.110 (2.79)

G
.147 (3.75) .500
Dia Max (12.7)
Max S

.250 (6.35)
Max

.500
(12.7)
Min
.070 (1.78) Max

Gate Source

.100 (2.54) Drain/Tab

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