Scribd
Upload
14 views3 pages

2SK1134 Nte2920

The NTE2920 is an N-Ch enhancement mode MOSFET designed for high-speed switching applications, with a maximum drain current of 70A and a drain-source voltage rating of 60V. It features a low on-resistance of 0.014Ω and operates within a temperature range of -55°C to +175°C. The device is packaged in a TO3P type and offers fast switching capabilities with various electrical characteristics detailed for performance evaluation.

Uploaded by

greider0110
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
14 views3 pages

2SK1134 Nte2920

The NTE2920 is an N-Ch enhancement mode MOSFET designed for high-speed switching applications, with a maximum drain current of 70A and a drain-source voltage rating of 60V. It features a low on-resistance of 0.014Ω and operates within a temperature range of -55°C to +175°C. The device is packaged in a TO3P type and offers fast switching capabilities with various electrical characteristics detailed for performance evaluation.

Uploaded by

greider0110
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

NTE2920

MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO3P Type Package D

Features:
D Drain Current: ID = 70A at TC = +25C
D Drain Source Voltage: VDSS = 60V Min
G
D Static Drain−Source On−Resistance: RDS(on) = 0.014 Max
D Fast Switching
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Continuous Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Continuous Drain Current, ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A
Single Pulse Drain Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W

Electrical Characteristics: (TC = +25C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit
Drain−Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 − − V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 − 4.0 V
Drain−Source On−Resistance RDS(on) VGS = 10V, ID = 54A − − 0.014 
Gate−Source Body Leakage Current IGSS VGS = 20V, VDS = 0V − − 100 nA
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V − − 25 A
Forward ON−Voltage VSD IS = 90A, VGS = 0V − − 2.5 V
Forward Transconductance gfs VDS = 25V, ID = 54A 25 − − S
Rev. 11−15
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Total Gate Charge Qg ID = 64A, VDS = 48V, VGS = 10V, − − 160 nC
Note 1
Gate−to−Source Charge Qgs − − 48 nC
Gate−to−Drain (“Miller”) Charge Qgd − − 54 nC
Turn−On Delay Time td(on) VDD = 30V, ID = 64A, RG = 6.2, − 20 − ns
RD = 0.45, Note 1
Rise Time tr − 160 − ns
Turn−Off Delay Time td(off) − 83 − ns
Fall Time tf − 150 − ns
Internal Drain Inductance LD Between lead, .250in. (6.0) mm from − 5.0 − nH
package and center of die contact
Internal Source Inductance LS − 13 − nH
Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz − 4500 − pF
Output Capacitance Coss − 2000 − pF
Reverse Transfer Capacitance Crss − 300 − pF

Source−Drain Ratings and Characteristics:


Parameter Symbol Test Conditions Min Typ Max Unit
Continuous Source Current (Body Diode) IS Note 2 − − 70 A
Pulsed Source Current (Body Diode) ISM Note 1 − − 360 A
Diode Forward Voltage VSD TJ = +25C, IS = 90A, VGS = 0V, − − 2.5 V
Note 3
Reverse Recovery Time trr TJ = +25C, IF = 64A, − 270 540 ns
di/dt = 100A/s, Note 1
Reverse Recovery Charge Qrr − 1.1 2.2 C
Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD)

Note 1. Pulse width  300s; duty cycle  2%.


Note 2. Current limited by the package, (Die Current = 90A).
Note 3. Repetitive rating; pulse width limited by maximum junction temperature.
.190 (4.82) .615 (15.62)

.787
(20.0)
.591
(15.02) .126
(3.22)
Dia

.787
(20.0)

G D S

.215 (5.47)

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy