Qucs

A Tutorial
Using Qucs in Textmode

Clemens Novak

Copyright
c 2013 Clemens Novak <clemens@familie-novak.net>

Permission is granted to copy, distribute and/or modify this document under the
terms of the GNU Free Documentation License, Version 1.1 or any later version
published by the Free Software Foundation. A copy of the license is included in
the section entitled ”GNU Free Documentation License”.
Introduction
Qucs consists of two parts: The simulator backend and a frontend, provding a
GUI for drawing schematics, controlling simulation, and displaying the simula-
tion results. The operation of the simulation backend is controlled via a text file
(called netlist in the following) which describes the circuit to be simulated and the
simulation(s) to perform in a textual manner. The simulation backend outputs
simulation data. This document describes the syntax of netlist files, shows how
the netlists are actually used to control Qucs, and finally demonstrates how the
simulation data can be visualized via GNU Octave.
Controlling Qucs via netlists and using a separate program for visualizing simula-
tion data may seem complex at first glance; this approach, however, poses the ad-
vantage of allowing more flexible usage scenarios: The potentially cpu-consuming
circuit simulation could be executed on a powerful (even remote) server, while
the result visualization can be done locally on a different computer. By creating
netlists via other programs / scripts, it is easy to setup batch simulations.

Outline
After defining the prerequisites, Chaper presents a basic example netlist and
shows how the simulation data can be visualized in Octave. Chapter describes
the various devices and schematic elements provided by Qucs; Chapter 0.0.26
describes the simulation commands.

Basics
Prerequisites
Qucs installed qucsator command available
The m-files located under qucs/qucs/octave.

Type:Name [node list] [parameters]

Every schematic element has a type and is instantiated with a specific name.

Example
In this chapter we will start with a simple example of performing an AC simulation
of the circuit shown in Fig. 1.

1
 in R1
out

AC1
C1

gnd

Figure 1: Circuit

The texts in red denote the node names and can be chosen freely. The netlist
corresponding to the circuit is shown below.

Vac:V1 in gnd U="1 V" f="1 kHz"

R:R1 out in R="1 kOhm"
C:C1 out gnd C="10 nF"

It can be seen that the file is structured line-wise; every line instantiates one
schematic element. The netlist instantiates

• a resistor R1 with resistance R = 1kΩ,

• a capacitor C1 with capacityC = 10nF, and

• an AC source AC1 with ”1”V peak-peak voltage(??) and a frequency of 1kHz.

Storing this netlist in a file rc_ac.net and feeding it into the simulator

qucsator < rc_ac.net

yields the following result:

parsing netlist...
checking netlist...
checker error, no actions defined: nothing to do

Qucs does not know what to do as we did not define any simulations to perform!

2
AC Sweep
Deciding to perform an AC sweep, we add the another line to the netlist, yielding:

Vac:V1 in gnd U="1 V" f="1 kHz"

R:R1 out in R="1 kOhm"
C:C1 out gnd C="10 nF"

.AC:AC1 Type="log" Start="1 Hz" Stop="10 MHz" Points="300" Noise="no"

Using this modified netlist with qucs starts an AC analysis of the circuit. The
simulation data is written to stdout; for further processing we save the data in a
file called rc_ac.dat.

qucsator < rc_ac.net > rc_ac.dat

The saved data from the simulation can be processed via Octave or Python; the
next two subsections continue the example.

Output Voltage vs. Frequency

100
out.v

10-1

10-2
Voltage

10-3

10-4

-5
10

10-6 0 1 2 3 4 5 6 7
10 10 10 10 10 10 10 10
Frequency

Figure 2: Simulation Result

3
Analysis with Octave
Starting GNU Octave and issuing the following commands

data=loadQucsDataSet(’temp.dat’)
loglog(data(1).data, data(3).data)

produces a log-log plot of the output voltage versus the frequency. A slightly more
polished plot is shown in Fig. 2.

Analysis with Python

Similar to the octave scripts, Qucs provides a Python script which allows parsing
of the generated simulation data file. The code example below shows how to load
and parse the data file with Python. The plot using Matplotlib is shown in Fig.
4.

import numpy as np
import matplotlib.pyplot as plt
import parse_result as pr

data = pr.parse_file(’rc_ac.dat’)

x = data[’acfrequency’]
y = np.abs(data[’out.v’])

plt.loglog(x, y, ’-r’)
plt.grid()
plt.xlabel(’Frequency’)
plt.xlabel(’Voltage’)
plt.legend([’out.v’])
plt.show()
plt.savefig(’rc_ac_python.eps’) # save plot as eps file

4
 Output Voltage vs. Frequency
100
out.v

10-1
Voltage

10-2

10-3 0
10 101 102 103 104 105 106 107
Frequency

Figure 3: Simulation Result

Nested Simulations. Qucs allows for nested simulations; as an example we

consider an AC analysis together with a parameter sweep. The AC analysis is set
up as before, but in addition the value of the capacitor C1 is increased in 5 steps
from 10nF to 100nF. The netlist for this simulation is as follows.

Vac:V1 in gnd U="1 V" f="1 kHz"

R:R1 out in R="1 kOhm"
C:C1 out gnd C="Cx"

.SW:SW1 Sim="AC1" Type="lin" Param="Cx" Start="10 nF" Stop="100 nF" Points="5"

.AC:AC1 Start="1 Hz" Stop="10 MHz" Points="100" Type="log" Noise="no"

The provided Python script can parse data files produced by such a nested simula-
tion as well; in case of two nested simulations it returns not vectors, but matrices.
The Python script below parses the simulation data file and plots the output
voltage versus the frequency for two different capacitor values (10nF and 100nF,
respectively). The corresponding plot is shown in Fig. ??.

5
import numpy as np
import matplotlib.pyplot as plt
import parse_result as pr

data = pr.parse_file(’rc_ac_sweep.dat’)

x = data[’acfrequency’]
y = np.abs(data[’out.v’])
c = data[’Cx’]

plt.loglog(x,y[0,:],’-r’)
plt.loglog(x,y[4,:],’-g’)
plt.legend([’Cx=’ + str(c[0]), ’Cx=’ + str(c[4])])
plt.xlabel(’Frequency’)
plt.ylabel(’Voltage’)
plt.title(’Output Voltage vs. Frequency’)
plt.grid()
plt.savefig(’rc_ac_sweep_python.eps’)
plt.show()

6
 Output Voltage vs. Frequency
100
Cx=1e-08
Cx=1e-07

10-1
Voltage

10-2

10-3

10-4 0
10 101 102 103 104 105 106 107
Frequency

Figure 4: Simulation Result

Transient Simulation
We can use almost the same circuit to perform a transient analysis

Vpulse:V1 in gnd U1=0 U2=1 T1="1 ns" T2="1 ms"

R:R1 out in R="1 kOhm"
C:C1 out gnd C="100 nF"

.TR:TR Type=lin Start="0" Stop="1.5 ms" Points="51"

Here we have replaced the AC sourc with a voltage source generating pulses and
told qucs to perform a transient analysis from 0 to 1.5ms. Storing the simulation
results in a file and using octave to plot the results (analoguous to the previsou
Subsection) yields the plot shown in Fig. 5-

7
 Output Voltage vs. Time
1
in.v
out.v

0.8

0.6
Voltage

0.4

0.2

0
0 0.0005 0.001 0.0015 0.002
Time

Figure 5: Simulation Result

Qucs Devices
Passive Devices
0.0.1 Resistor
R:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

R ohmic resistance in Ohms n/a yes
Temp simulation temperature in degree Celsius 26.85 no
Tc1 first order temperature coefficient 0.0 no
Tc2 second order temperature coefficient 0.0 no
Tnom temperature at which parameters were 26.85 no
extracted

0.0.2 Capacitor
C:Name Node1 Node2 [Parameters]

8
 Parameter Name Default Value Mandatory
C capacitance in Farad n/a yes
V initial voltage for transient simulation n/a no

0.0.3 Inductor
L:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

L inductance in Henry n/a yes
I initial current for transient simulation n/a no

Nonlinear Components
0.0.4 Diode
Diode:Name Cathode-Node Anode-Node [Parameters]

9
 Parameter Name Default Value Mandatory
Is saturation current 1e-15 A yes
N emission coefficient 1 yes
Cj0 zero-bias junction capacitance 10 fF yes
M grading coefficient 0.5 yes
Vj junction potential 0.7 V yes
Fc forward-bias depletion capacitance coef- 0.5 no
ficient
Cp linear capacitance 0.0 fF no
Isr recombination current parameter 0.0 no
Nr emission coefficient for Isr 2.0 no
Rs ohmic series resistance 0.0 Ohm no
Tt transit time 0.0 ps no
Ikf high-injection knee current (0=infinity) 0 no
Kf flicker noise coefficient 0.0 no
Af flicker noise exponent 1.0 no
Ffe flicker noise frequency exponent 1.0 no
Bv reverse breakdown voltage 0 no
Ibv current at reverse breakdown voltage 1 mA no
Temp simulation temperature in degree Celsius 26.85 no
Xti saturation current temperature exponent 3.0 no
Eg energy bandgap in eV 1.11 no
Tbv Bv linear temperature coefficient 0.0 no
Trs Rs linear temperature coefficient 0.0 no
Ttt1 Tt linear temperature coefficient 0.0 no
Ttt2 Tt quadratic temperature coefficient 0.0 no
Tm1 M linear temperature coefficient 0.0 no
Tm2 M quadratic temperature coefficient 0.0 no
Tnom temperature at which parameters were 26.85 no
extracted
Area default area for diode 1.0 no

0.0.5 Bipolar Junction Transistor with Substrate

BJT:Name Base-Node Collector-Node Emitter-Node Substrate-Node [Parameters]

10
Parameter Name Default Value Mandatory
Type Polarity [npn, pnp] n/a yes
Is saturation current 1e-16 yes
Nf forward emission coefficient 1 yes
Nr reverse emission coefficient 1 yes
Ikf high current corner for forward beta 0 yes
Ikr high current corner for reverse beta 0 yes
Vaf forward early voltage 0 yes
Var reverse early voltage 0 yes
Ise base-emitter leakage saturation current 0 yes
Ne base-emitter leakage emission coefficient 1.5 yes
Isc base-collector leakage saturation current 0 yes
Nc base-collector leakage emission coefficient 2 yes
Bf forward beta 100 yes
Br reverse beta 1 yes
Rbm minimum base resistance for high cur- 0 yes
rents
Irb current for base resistance midpoint 0 yes
Rc collector ohmic resistance 0 yes
Re emitter ohmic resistance 0 yes
Rb zero-bias base resistance (may be high- 0 yes
current dependent)
Cje base-emitter zero-bias depletion capaci- 0 yes
tance
Vje base-emitter junction built-in potential 0.75 yes
Mje base-emitter junction exponential factor 0.33 yes
Cjc base-collector zero-bias depletion capaci- 0 yes
tance
Vjc base-collector junction built-in potential 0.75 yes
Mjc base-collector junction exponential factor 0.33 yes
Xcjc fraction of Cjc that goes to internal base 1.0 yes
pin
Cjs zero-bias collector-substrate capacitance 0 yes
Vjs substrate junction built-in potential 0.75 yes
Mjs substrate junction exponential factor 0 yes
Fc forward-bias depletion capacitance coef- 0.5 yes
ficient
Tf ideal forward transit time 0.0 yes
Xtf coefficient of bias-dependence for Tf 0.0 yes
Vtf voltage dependence of Tf on base- 0.0 yes
collector voltage
Itf high-current effect on Tf 0.0 yes
Tr ideal reverse transit time 11 0.0 yes
Temp simulation temperature in degree Celsius 26.85 no
Kf flicker noise coefficient 0.0 no
Af flicker noise exponent 1.0 no
Ffe flicker noise frequency exponent 1.0 no
Kb burst noise coefficient 0.0 no
Ab burst noise exponent 1.0 no
Fb burst noise corner frequency in Hertz 1.0 no
Ptf excess phase in degrees 0.0 no
0.0.6 Diac
Diac:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

Vbo (bidirectional) breakover voltage 30 V yes
Ibo (bidirectional) breakover current 50 uA yes
Cj0 parasitic capacitance 10 pF no
Is saturation current 1e-10 A no
N emission coefficient 2 no
Ri intrinsic junction resistance 10 Ohm no
Temp simulation temperature 26.85 no

0.0.7 Silicon Controlled Rectifier (SCR)

xxx:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

Vbo breakover voltage 400 V todo
Igt gate trigger current 50 uA todo
Cj0 parasitic capacitance 10 pF todo
Is saturation current 1e-10 A todo
N emission coefficient 2 todo
Ri intrinsic junction resistance 10 Ohm todo
Rg gate resistance 5 Ohm todo
Temp simulation temperature 26.85 todo

0.0.8 Triac (Bidirectional Thyristor)

xxx:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

Vbo (bidirectional) breakover voltage 400 V todo
Igt (bidirectional) gate trigger current 50 uA todo
Cj0 parasitic capacitance 10 pF todo
Is saturation current 1e-10 A todo
N emission coefficient 2 todo
Ri intrinsic junction resistance 10 Ohm todo
Rg gate resistance 5 Ohm todo
Temp simulation temperature 26.85 todo

12
0.0.9 Resonance Tunnel Diode
xxx:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

Ip peak current 4 mA todo
Iv valley current 0.6 mA todo
Vv valley voltage 0.8 V todo
Wr resonance energy in Ws 2.7e-20 todo
eta Fermi energy in Ws 1e-20 todo
dW resonance width in Ws 4.5e-21 todo
Tmax maximum of transmission 0.95 todo
de fitting factor for electron density 0.9 todo
dv fitting factor for voltage drop 2.0 todo
nv fitting factor for diode current 16 todo
Cj0 zero-bias depletion capacitance 80 fF todo
M grading coefficient 0.5 todo
Vj junction potential 0.5 V todo
te life-time of electrons 0.6 ps todo
Temp simulation temperature in degree Celsius 26.85 todo
Area default area for diode 1.0 todo

0.0.10 Junction Field-effect Transistor

JFET:Name Gate-Node Drain-Node Source-Node [Parameters]

13
 Parameter Name Default Value Mandatory
Type polarity [nfet, pfet] n/a yes
Vt0 threshold voltage -2.0 V yes
Beta transconductance parameter 1e-4 yes
Lambda channel-length modulation parameter 0.0 yes
Rd parasitic drain resistance 0.0 yes
Rs parasitic source resistance 0.0 yes
Is gate-junction saturation current 1e-14 yes
N gate-junction emission coefficient 1.0 yes
Isr gate-junction recombination current pa- 1e-14 yes
rameter
Nr Isr emission coefficient 2.0 yes
Cgs zero-bias gate-source junction capaci- 0.0 yes
tance
Cgd zero-bias gate-drain junction capacitance 0.0 yes
Pb gate-junction potential 1.0 yes
Fc forward-bias junction capacitance coeffi- 0.5 yes
cient
M gate P-N grading coefficient 0.5 yes
Kf flicker noise coefficient 0.0 no
Af flicker noise exponent 1.0 no
Ffe flicker noise frequency exponent 1.0 no
Temp simulation temperature in degree Celsius 26.85 no
Xti saturation current temperature exponent 3.0 no
Vt0tc Vt0 temperature coefficient 0.0 no
Betatce Beta exponential temperature coefficient 0.0 no
Tnom temperature at which parameters were 26.85 no
extracted
Area default area for JFET 1.0 no

0.0.11 MOS field-effect transistor with substrate

MOSFET:Name Gate-Node Drain-Node Source-Node Bulk-Nod[Parameters]

14
Parameter Name Default Value Mandatory
Type polarity [nfet, pfet] n/a yes
Vt0 zero-bias threshold voltage 1.0 V yes
Kp transconductance coefficient in A/V2 2e-5 yes
Gamma bulk threshold in sqrt(V) yes
Phi surface potential 0.6 V yes
Lambda channel-length modulation parameter in 0.0 yes
1/V
Rd drain ohmic resistance 0.0 Ohm no
Rs source ohmic resistance 0.0 Ohm no
Rg gate ohmic resistance 0.0 Ohm no
Is bulk junction saturation current 1e-14 A yes
N bulk junction emission coefficient 1.0 yes
W channel width 1 um no
L channel length 1 um no
Ld lateral diffusion length 0.0 no
Tox oxide thickness 0.1 um no
Cgso gate-source overlap capacitance per me- 0.0 no
ter of channel width in F/m
Cgdo gate-drain overlap capacitance per meter 0.0 no
of channel width in F/m
Cgbo gate-bulk overlap capacitance per meter 0.0 no
of channel length in F/m
Cbd zero-bias bulk-drain junction capacitance 0.0 F no
Cbs zero-bias bulk-source junction capaci- 0.0 F no
tance
Pb bulk junction potential 0.8 V no
Mj bulk junction bottom grading coefficient 0.5 no
Fc bulk junction forward-bias depletion ca- 0.5 no
pacitance coefficient
Cjsw zero-bias bulk junction periphery capaci- 0.0 no
tance per meter of junction perimeter in
F/m
Mjsw bulk junction periphery grading coeffi- 0.33 no
cient
Tt bulk transit time 0.0 ps no
Nsub substrate bulk doping density in 1/cm3 0.0 no
Nss surface state density in 1/cm2 0.0 no
Tpg gate material type: 0 = alumina; -1 = 0 no
same as bulk; 1 = opposite to bulk
Uo surface mobility in cm2 /Vs 600.0 no
Rsh drain and source diffusion sheet resis- 0.0 no
tance in Ohms/square 15
Nrd number of equivalent drain squares 1 no
Nrs number of equivalent source squares 1 no
Cj zero-bias bulk junction bottom capaci- 0.0 no
tance per square meter of junction area
in F/m2
Js bulk junction saturation current per 0.0 no
square meter of junction area in A/m2
Ad drain diffusion area in m2 0.0 no
Sources
0.0.12 DC Voltage Source
V:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

U voltage in Volts yes

0.0.13 AC Voltage Source

Vac:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

U peak voltage in Volts n/a yes
f frequency in Hertz n/a no
Phase initial phase in degrees 0 no
Theta damping factor (transient simulation 0 no
only)

0.0.14 Voltage Controlled Voltage Source

VCVS:Name Node1 Node2 Node3 Node4 [Parameters]

Node1 is the input , Node2 is the output, Node3 is the ground for the input, and
Node4 is the ground for the output.
Parameter Name Default Value Mandatory
G forward transfer factor 1.0 todo
T delay time 0 todo

0.0.15 Voltage Controlled Current Source

VCVS:Name Node1 Node2 Node3 Node4 [Parameters]

Node1 is the input , Node2 is the output, Node3 is the ground for the input, and
Node4 is the ground for the output.
Parameter Name Default Value Mandatory
G forward transconductance 1.0 todo
T delay time 0 todo

16
0.0.16 Current Controlled Voltage Source
VCVS:Name Node1 Node2 Node3 Node4 [Parameters]

Node1 is the input , Node2 is the output, Node3 is the ground for the input, and
Node4 is the ground for the output.
Parameter Name Default Value Mandatory
G forward transfer factor 1.0 todo
T delay time 0 todo

0.0.17 Current Controlled Current Source

VCVS:Name Node1 Node2 Node3 Node4 [Parameters]

Node1 is the input , Node2 is the output, Node3 is the ground for the input, and
Node4 is the ground for the output.
Parameter Name Default Value Mandatory
G forward transfer factor 1.0 todo
T delay time 0 todo

0.0.18 Voltage Pulse

Vpulse:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

U1 voltage before and after the pulse 0V yes
U2 voltage of the pulse 1V yes
T1 start time of the pulse 0 yes
T2 ending time of the pulse 1 ms yes
Tr rise time of the leading edge 1 ns no
Tf fall time of the trailing edge 1 ns no

0.0.19 Current Pulse

Ipulse:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

I1 current before and after the pulse 0V yes
I2 current of the pulse 1V yes
T1 start time of the pulse 0 yes
T2 ending time of the pulse 1 ms yes
Tr rise time of the leading edge 1 ns no
Tf fall time of the trailing edge 1 ns no

17
0.0.20 Rectangle Voltage
Vrect:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

U voltage of high signal 1V yes
TH duration of high pulses 1 ms yes
TL duration of low pulses 1 ms yes
Tr rise time of the leading edge 1 ns todo
Tf fall time of the leading edge 1 ns todo
Td initial delay time 0 ns todo

0.0.21 Rectangle Current

Irect:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

I current at high pulse 1 mA yes
TH duration of high pulses 1 ms yes
TL duration of low pulses 1 ms yes
Tr rise time of the leading edge 1 ns todo
Tf fall time of the leading edge 1 ns todo
Td initial delay time 0 ns todo

0.0.22 Exponential Voltage Source

Vexp:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

U1 voltage before rising edge 0V todo
U2 maximum voltage of the pulse 1V todo
T1 start time of the exponentially rising edge 0 todo
T2 start of exponential decay 1 ms todo
Tr rise time of the rising edge 1 ns todo
Tf fall time of the falling edge 1 ns todo

0.0.23 Exponential Current Source

Vexp:Name Node1 Node2 [Parameters]

18
 Parameter Name Default Value Mandatory
I1 Current before rising edge 0V todo
I2 maximum current of the pulse 1A todo
T1 start time of the exponentially rising edge 0 todo
T2 start of exponential decay 1 ms todo
Tr rise time of the rising edge 1 ns todo
Tf fall time of the falling edge 1 ns todo

0.0.24 AC Voltage Source with Ammplitude Modulator

AM_Mod:Name Node1 Node2 Node3 [Parameters]
Node1 is the modulated output, Node2 is the common ground, and Node3 is the
modulation input.
Parameter Name Default Value Mandatory
U peak voltage in Volts 1V todo
f frequency in Hertz 1 GHz todo
Phase initial phase in degrees 0 todo
m modulation level 1.0 todo

0.0.25 AC Voltage Source with Ammplitude Modulator

AM_Mod:Name Node1 Node2 Node3 [Parameters]
Node1 is the modulated output, Node2 is the common ground, and Node3 is the
modulation input.
Parameter Name Default Value Mandatory
U peak voltage in Volts 1V todo
f frequency in Hertz 1 GHz todo
Phase initial phase in degrees 0 todo
m modulation level 1.0 todo

0.0.26 AC Voltage Source with Phase Modulator

PM_Mod:Name Node1 Node2 Node3 [Parameters]
Node1 is the modulated output, Node2 is the common ground, and Node3 is the
modulation input.
Parameter Name Default Value Mandatory
U peak voltage in Volts 1V todo
f frequency in Hertz 1 GHz todo
Phase initial phase in degrees 0 todo
M modulation index 1.0 todo

19
Simulation Commands
DC Simulation
.DC:Name [Parameters]

Parameter Name Default Value Mandatory

Temp simulation temperature in degree Celsius 26.85 no
reltol relative tolerance for convergence 0.001 no
absol absolute tolerance for currents 1 pA no
vntol absolute tolerance for voltages 1 uV no
saveOPs put operating points into dataset [yes,no] no
MaxIter maximum number of iterations until error 150 no
saveAll save subcircuit nodes into dataset [yes,no] no no
convHelper preferred convergence algorithm [none, none
gMinStepping, SteepestDescent, Line-
Search, Attenuation, SourceStepping]
Solver method for solving the circuit matrix CroutLU no
[CroutLU, DoolittleLU, HouseholderQR,
HouseholderLQ, GolubSVD]

AC Simulation
.AC:Name [Parameters]

Parameter Name Default Value Mandatory

Type sweep type [lin,log,list,const] n/a yes
Start start frequency in Hertz n/a yes
Stop stop frequency in Hertz n/a yes
Points number of simulation steps n/a yes
Noise calculate noise voltages no no

Parameter Sweep
.SW:Name [Parameters]

20
 Parameter Name Default Value Mandatory
Sim simulation to perform parameter sweep n/a yes
on
Type sweep type [lin,log,list,const] n/a yes
Param parameter to sweep n/a yes
Stop start value for sweep n/a yes
Start stop value for sweep n/a yes

Transient Simulation
.TR:Name [Parameters]
Parameter Name Default Value Mandatory
Type sweep type [lin,log,list,const] todo todo
Start start time in seconds todo todo
Stop stop time in seconds todo todo
Points number of simulation time steps 11(todo) todo
IntegrationMethod integration method [Euler, Trapezoidal, Trapezoidal todo
Gear, AdamsMoulton]
Order order of integration method 2 todo
InitialStep initial step size in seconds 1 ns (todo) todo
MinStep minimum step size in seconds 1e-16 todo
MaxIter maximum number of iterations until error 150 todo
reltol relative tolerance for convergence 0.001 todo
abstol absolute tolerance for currents 1 pA todo
vntol absolute tolerance for voltages 1 uV todo
Temp simulation temperature in degree Celsius 26.85 todo
LTEreltol relative tolerance of local truncation error 1e-3 todo
LTEabstol absolute tolerance of local truncation er- 1e-6 todo
ror
LTEfactor overestimation of local truncation error 1 todo
Solver method for solving the circuit matrix CroutLU todo
[CroutLU, DoolittleLU, HouseholderQR,
HouseholderLQ, GolubSVD]
relaxTSR relax time step raster [no, yes] yes todo
initialDC perform an initial DC analysis [yes, no] yes todo
MaxStep maximum step size in seconds 0 todo

S Parameter Simulation
xxx:Name Node1 Node2 [Parameters]

21
 Parameter Name Default Value Mandatory
Type sweep type [lin,log,list,const] todo todo
Start start frequency in Hertz 1 GHz todo
Stop stop frequency in Hertz 10 GHz todo
Points number of simulation steps 19 todo
Noise calculate noise parameters no todo
NoiseIP input port for noise figure 1 todo
NoiseOP output port for noise figure 2 todo
saveCVs put characteristic values into dataset no todo
[yes,no]
saveAll save subcircuit characteristic values into no todo
dataset [yes,no]

0.0.27 xxx
xxx:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

L inductance in Henry n/a yes

0.0.28 Silicon Controlled Rectifier (SCR)

xxx:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

Vbo breakover voltage 400 V todo
Igt gate trigger current 50 uA todo
Cj0 parasitic capacitance 10 pF todo
Is saturation current 1e-10 A todo
N emission coefficient 2 todo
Ri intrinsic junction resistance 10 Ohm todo
Rg gate resistance 5 Ohm todo
Temp simulation temperature 26.85 todo

0.0.29 Triac (Bidirectional Thyristor)

xxx:Name Node1 Node2 [Parameters]

22
 Parameter Name Default Value Mandatory
Vbo (bidirectional) breakover voltage 400 V todo
Igt (bidirectional) gate trigger current 50 uA todo
Cj0 parasitic capacitance 10 pF todo
Is saturation current 1e-10 A todo
N emission coefficient 2 todo
Ri intrinsic junction resistance 10 Ohm todo
Rg gate resistance 5 Ohm todo
Temp simulation temperature 26.85 todo

0.0.30 Resonance Tunnel Diode

xxx:Name Node1 Node2 [Parameters]

Parameter Name Default Value Mandatory

Ip peak current 4 mA todo
Iv valley current 0.6 mA todo
Vv valley voltage 0.8 V todo
Wr resonance energy in Ws 2.7e-20 todo
eta Fermi energy in Ws 1e-20 todo
dW resonance width in Ws 4.5e-21 todo
Tmax maximum of transmission 0.95 todo
de fitting factor for electron density 0.9 todo
dv fitting factor for voltage drop 2.0 todo
nv fitting factor for diode current 16 todo
Cj0 zero-bias depletion capacitance 80 fF todo
M grading coefficient 0.5 todo
Vj junction potential 0.5 V todo
te life-time of electrons 0.6 ps todo
Temp simulation temperature in degree Celsius 26.85 todo
Area default area for diode 1.0 todo

23