Dielectric Modulated Double Gate Hetero Dielectric TFET

(DM-DGH-TFET) Biosensors: Gate Misalignment

Analysis on Sensitivity
N.Nagendra Reddy Deepak Kumar Panda
Microelectronics and VLSI Design Group Microelectronics and VLSI Design Group
School of Electronics Engineering School of Electronics Engineering
VIT-AP University VIT-AP University
Andhra Pradesh, India-522237. Andhra Pradesh, India-522237.
deepakiitkgp04@gmail.com

Abstract - In this article, we have investigated the Gate miss unique detection techniques, diagnosis methods. The biosensor
alignment effects on the performance of the Double gate hetero has become a part of every human life with its widespread
dielectric TFET(DGH-TFET) biosensor device in terms of applications like medical detection, diagnosis, food quality
subthreshold swing(SS), ON-current (Ion), OFF Current (Ioff), checking, environmental monitoring, drug discovery, drug
Threshold voltage (Vth) and the ration of ON-current (Ion) to the
delivery, etc. The advancement in technology developed
OF-current (Ion/Ioff). For the first time, we have thoroughly
investigated the miss alignment of gate electrodes effect on the different kinds of a biosensor, including the following list:
sensitivity of the double gate TFET based biosensor where electrochemical, optical, ion-sensitive electrodes,
actually considered the symmetric gate structure with no piezoelectric, etc. Since the biosensors have an excellent
deviation in the gate alignment, however practically which is not advantage compared to the In-vitro-diagnosis(IVD) method,
possible. With due respect to the investigation carried in this they still face difficulties in terms of low sensitivity, primer
work along with the sensitivity analysis, it observed that position preparation for interaction, high-cost labelling process, and
and the alignment of both top and bottom gate show significant complex design. There is a requirement of the next-generation
impact on the sensitivity of the biosensor. The misalignment of the
biosensor to suppress these difficulties to smooth conduction
double gate is executed by altering the position of the top gate in
overlapped state and underlapped state concerning the bottom
of the POCT.
gate of the proposed double gate TFET biosensor. The
underlapped gate structure degrades the performance device The FET based biosensors[2-10] are emerged as the potential
compared to the symmetric aligned gate structure, but the candidate to represents the next generation biosensor with the
overlapped gate structure improves the device's overall following advantages 1) label-free detection of the target
performance. The investigation is carried by taking the biomolecules, hence the cost of detection and complexity for
misalignment effect in the range of 10 nm in both overlapped and the label preparation is reduced.2) possibility of
underlapped cases. The underlapped alignment gate structure miniaturization of device size with high scalability 3)
falls of the subthreshold sensitivity by 30%, where the overlapped
Compatible with the standard CMOS technology to fabricate
gate structure become the advantage for shoot up the sensitivity
of the doublet gate hetero dielectric TFET biosensor by 25% and
the device with low-cost in mass production 3) High sensitivity
the underlapped gate structure improves the threshold voltage with drastically reduced time for the detection 4) simple
sensitivity 45% on an average. operation with user-friendly interface of the output result
. where an untrained person also analyzes the results. Different
methods and techniques were proposed for the FET-based
Index Terms -Biosensor, Double Gate, Dielectric
biosensor to detect the target biomolecules out of all the
modulation(DM), TFET, Gate Misalignment, Underlapped gate.
methods, the dielectric modulation-based detection techniques
I. INTRODUCTION far ahead of others because of the provision of label-free
detection [10-12]. The label-free detection technique uses the
In recent times, the demand for the Point-of-care-testing molecular properties of the target biomolecules; i.e. dielectric
(POCT) tools increased rapidly to safeguard humankind from constant values are used for the detection instead of creating a
pathogenic microorganisms, and the preset corona pandemic label for the detection. The DM technique reduces the design
around the world is an excellent example of the impact of cost by eliminating the cost for the label preparation and the
these microorganisms on human life. The world has witnessed complexity of the design [11-12].
several dangerous pandemic situations due to the silent
outbreak of the pathogenic microorganism. The biosensing The detection of neutrally charged biomolecules is highly
technology created the way to realise the real-time POCT with challenging, and many methods cannot detect the presence of
the aid of advanced science and technology[1-2]. The field of neutrally charged biomolecules, but the dielectric modulation
bio-sensing attracted and created considerable interest among technique can detect both charged and neutral biomolecules
researchers and completely changed the state of this field with
without any additional arrangement. In the dielectric polarity of the gate voltage. Researchers try to eliminate these
modulation techniques, a nano-gap cavity is created under the hitches by the mean of structural modification and unique
gate electrode to immobilize the target biomolecules. The detection techniques[14-21]. The structural modification gives
nanocavity is created by performing the selective etching of the fruitful result for improvement of the On current of the
the gate oxide material with various etching techniques like TFET and huge literature has reported by marking its added
dry and wet etching techniques. To detect the target benefits to the TFET biosensors. The ambipolar behavior of
biomolecules, first, the target biomolecules are made to the TFET no more a draw for the application of biosensors
immobilize in the nanocavity under the gate conductor. Once where biosensors which are utilizing the ambipolar behavior
the biomolecules are immobilized in the nanocavity, the reported high sensitivity [18-21].
practical dielectric constant value of the biomolecules comes
into force which influences the charge at the interface of both There are many different structural approaches were reported
oxide and semiconductor material surfaces. The change in the in the literature like U-shaped TFET [22], L-shaped
interface charges(i.e. the charge at the interface of oxide and TFET[23], Z-shaped TFET[19] and gate all around TFET[18]
the semiconductor interface) alters the effective electrical and etc. The one of the unique and common structural
parameters of the biosensor in terms of threshold voltage, modification is the inclusion of the double gate in the design of
subthreshold swing and on current.The sensitivity of the the TFET biosensor. The double gate TFET is the one high
device is measured by considering the electrical parameter impacted structural modification method for improving the
values of the device measured in the absence of the sensitivity of the TFET based biosensor in terms of ON
biomolecules in the nano cavity to the measured electrical current, low off state current with high controllability over the
parameters values of the biosensor in the presence of channel region[12-23]. So because of the above given reason
biomolecules in the nano cavity. The absence of the the double gate structure of the TFET become very popular
biomolecules was represented by filling the cavity with air and preferable for the design of the biosensor and every one
which is having the dielectric constant value K=1[11-12]. included the double gate structure to enhance the sensitivity of
the TFET biosensor. Here every one try to adopt the advantage
The sensitivity of the Dielectric Modulation FET based of the double gate structure to improves the sensitivity but not
biosensor directly depends on the gating effect of the given any priority about the alignment of the gate in the design
semiconductor device. The gating effect is defined as with of biosensor.
conjugation of the immobile target biomolecule under the
nanocavity of the gate electrode influence the effective charge Here in this work for the first time we have investigated gate
variation at the surface of the semiconductor and the oxide misalignment effect on the sensitivity of a double gate TFET
interface. As high as the FET device can receive the gating based biosensor. Generally, the possibility of getting
effect, the FET-based biosensor will deliver much high symmetric gate structure is highly complicated because of
sensitivity, but the high response for the gating effect will be multiple fabrication steps and etching process involved, so
observed in the subthreshold region. The sensitivity of the there is chance of deviation of gate structure from the desired
conventional classical FET(CCFET) device is limited due to symmetric structure and these misalignment effect degrades
the limitation in the minimum achievable subthreshold swing the device performance [24-26][. Here in this work we have
(SS>60mv/dec) so that the conventional FET based biosensors tried to estimate the gate misalignment effect on the sensitivity
sensitivity is limited by the mean of hectic issues like high of the dielectric modulate double gate hetero dielectric TFET
subthreshold swing and short channel effects(SEC’s)[13]. The (DM-DGH-TFET) biosensor. The hetero dielectric material
Short channel effects (SEC’s) further limit the sensitivity of improves the sensitivity of the device. The entire investigation
the CFET based biosensors, and the device cannot deliver the accomplished by assuming gate misalignment of TFET
desired result [13]. biosensor in two possible cases.i.e. case I: The underlapped
Top gate with the bottom gate by two scale 5nm and 10nm.
The Tunnel FET(TFET) becomes the suitable alternative for Case II: The overlapped top gate with respect to the bottom
the CFET devices with its superior characteristics to suppress gate by two scales 5nm and 10nm. The entire work is carried
the challenges faced by the CFET[14]. The TFET device uses in to threes section where the section II describes the structure
the unique charge carrier transport mechanism, i.e. the band to and simulation setup of the proposed DM-DGH-TFET device
band tunneling of the charge carrier and exhibits excellent with the possible combination of the different biomolecules
subthreshold behavior (SS<60mv/dec). The powerful ranging from different dielectric constant values. The results
subthreshold feature of TFET device made it a desirable and the discussion were given in the section III and the
candidate for biosensing application because for the biosensors conclusion is given in section IV.
high sensitivity is limited to the subthreshold region. The
II: DEVICE STRUCTURE AND SIMULATION SETUP
Tunnel FET device severely suffers from hectic issues like low
On state current (Ion) and ambipolar behaviour. The ambipolar The schematic representation of the proposed double gate
behaviour of the TFET makes the device is not suitable for the hetero dielectric TFET based biosensor is shown in figure 1,
use of digital circuits because the TFET works for the both where the cavity is created in the gate oxide region of SiO2.
Here we are using a 1nm buffer layer in the cavity region of with respect to the bottom gate of the DGH-TFET device. The
the DM-DGH-TFET biosensor for having good interaction and second possible case considered here is the overlapped gate
immobilization of target biomolecules with the semiconductor with respect to the bottom gate. Here in the two possible cases,
interface. Here we are using the hetero dielectric material for we have only varied the position of the top gate to incorporate
the gate electrode with the HfO2 and SiO2 to improve the the misalignment effect of the DM-DGH-TFET biosensor. The
stability of the TFET device in terms of current and ambipolar structural parameters for the simulation of the DGH-TFET
behaviour. biosensor are considered as follows, the channel length is
(LCH) is taken as 25 nm with the uniform doping of 1X10 16
cm-3(p-type), then drain and the source are taken as the equal
length with 30 nm with uniform doping of the 1X1020 cm-3
with is P-type, and the drain is doped with 1X1018 cm-3 with
N-type material. The thickness of the gate oxide (T ox) is taken
as 3 nm, and the cavity length (L cavity) is taken as 10 nm, and
the thickness is (Tcavity) is taken as 2nm to immobilize the
target biomolecules. The buffer oxide thickness is considered
(Tbox) 1nm, and the gate metal work function is taken as the
(Øm) is 4.3 eV. Here at the time of device simulation it is
considered as the cavity is fully occupied by the target
Figure:1. Structural illustration of proposed Double Gate biomolecules with a range of dielectric constant (K) values.
hetero dielectric Tunnel FET(DM-DGH-TFET) biosensor with
symmetric alignment of gate. The Silvaco ATLAS TCAD \tool is used for getting
simulations for the proposed DGH-TFET biosensor [27],
including the misalignment of the gate. The tunneling
probability at the interface of silicon and oxide is calculated by
using the non-local band –to band (BTBT) model used for the
accurate estimation, , the auger model, fermi-Dirac carrier
distribution, the Shockley-Read –Hall (SRH)
recombination/generation model, bandgap narrowing model
and electric field depended mobility models are used for the
simulation of the device. The doublet gate hetero dielectric
model is calibrated with the W. Y. Choi et al. to realize the
real-time device showed in figure 4(a), and the simulation
result clearly indicates that the device is giving precisely
(a) relative values to the W. Y. Choi et al.

III: RESULTS AND DISCUSSIONS:

Here in this segment, we've discussed the complete

investigation of the electrostatic behaviour of the DGH-TFET
biosensor by considering the possible misalignment of the gate
electrode as a result of the shift in the biomolecules inside the
nangap under the gate electrode. To investigate the effect of
the gate electrode misalignment on the device's sensitivity, we
have taken two different possible cases for investigation given
as follows.
(b)
Figure:2. Schematic representation of the Symmetric Double Case 1: In this case, we are considering t the
Gate TFET biosensor with (a) Case one by considering the possibility of a shortening the length of the top gate(LTG)
Underlapped top gate with the bottom gate (b) Case 2 is with respect to the length of bottom gate (LBT) (i.e. (LTG)<
overlapped top gate structure with the bottom gate. (LBT)) and here we have considered it as the underlapped
top gate in the channel region. The length of the
Figure 2 represent the two possible causes for the underlapped top gate is varied by 5 nm and 10 nm. The
misalignment of the gate electrodes, and here we are Figure 2(a) represents the description of the underlapped
considering these two possible cases; the first case is the gate structure.
underlapped gate structure, i.e. the top gate is underlapped
 Case 2: Now, for the second case, we have considering
the extended length of the top gate length (LTG) with
respect to the bottom gate (LBT) (i.e. (LTG) > (LBG)) and
here we have treated it as the overlapped gate in the
source region with the extension of the top gate electrode.
The overlapped gate length is varied by 5 nm and 10 nm
for the analysing the sensitivity of the DGH-TFET
biosensor. Figure 2(b) represents the overlapped gate
structure.

Before starting the analysis of the gate misalignment effect on

the DGH-DM-TFET biosensor's sensitivity, we measured the
electrical parameters and their respective sensitivity by taking
symmetric gate (matched gate, i.e. LTG= LBG=0) structure as
the reference. The symmetric gate structure is simulated by
interchanging the biomolecules having different dielectric
constant values (i.e. Streptavidin (K=2.1,Uricase
(K=1.54),Biotin(K=2.63)). The sensitivity analysis of the
double gate TFET based biosensor is started with case 1,
where the underlapped gate is considered with the reduced (a)
gate length (LTG)< (LBT) with two reduced values, 5 nm and
10 nm. Figure 2 illustrates the underlapped case where the
reduced length is indicated with the red colour. The decreased
length of the top gate in case 1 is unable to cover the
biosensor's immobilized nanocavity, which results in the
loosing of electrostatic controllability over the channel region.

(b)
Figure:4.(a) Calibration of the proposed device with W. Y.
Choi etal[33] (b)Transfer characteristics of the DGH-TFET
biosensor for K=1.54(Uricase) with all the possible condition
of misalignment of gate with overlap and underlap.

constant biomolecule. But in the case of the underlapped gate,

the length is reduced, and it cannot influence the electrostatic
parameter at the interface of the silicon and oxide. Figure 3
illustrates the energy band diagram of the proposed device
with all the possible cases of gate misalignment, and from this
Figure, we can observe the underlapped gate increases the
Figure:3. The Energy band diagram of the DGH-TFET energy band gap and reduces the tunneling of the charge
biosensor by considering all possible case for carriers. This is because when the gate length becomes shorter
K=1.54(Uricase). than the actual length,, it cannot produce the high gating effect.
The underlapped gate structure reduces the electrostatic
In the dielectric modulation-based detection technique, the control inside the channel because of the reduced gate length
gate electrode plays a key role in identifying biomolecule by over the cavity of the DM-DGH-TFET biosensor. As the
imposing the variation of the electrostatic potential at the underlapped gate length increased from 5 nm to 10 nm, the
interface of silicon and oxide with the change in the dielectric energy bandgap also increased, and this indicates that the
channel controllability directly depends on the overlapped SS of the DM-DGH-TFET biosensor by considering the
length of the gate to the channel [30-32]. underlapped gate misalignment effect i.e. with different
biomolecules biomolecule (Air, Uricase, streptavidin, Biotin).
In case 2 for the overlapped case, the tunneling length is
reduced as the gate overlapping length changed from 5 nm to Figure 4(b) indicates that the drain current is increased for the
10 nm, which we can observe clearly from Figure 3, and the overlapped gate and reduced for the underlapped gate structure
overlapped gate structure reduces the energy band gap and compared with the symmetric gate structure. The device's
escalates the tunneling rate of the charge carriers compared to sensitivity is measured by considering the subthreshold swing
the symmetric gate structure. The overlapped lenth of the gate and the threshold voltage of the device because the gate
over the source domain of the DM-DGH-TFET biosensor misalignment shows the high impact on the SS, ratio of
enhances the high electric field near the source-channel (ION/IOFF) and the threshold voltage (Vth).
tunneling junction; as a result, the tunneling length of the
charge carriers reduces, and the On state current of the device Figure 5(a) represent the subthreshold swing operating values
is increased. Figure 3 illustrate about drain current (ID) plot for of the proposed DM-DGH-TFET biosensor with the variation
the proposed DM-DGH-TFET biosensor by considering the of dielectric constant values for the symmetric gate structure,
gate misalignment by immobilizing the Uricase inside the nano and here the plot of SS indicating that as the dielectric constant
cavity region. of the biomolecule is increasing, the SS is reducing drastically
this is due to the increment in the dielectric constant of the
targeted biomolecule and it increases more surface charge
interaction at the oxide and silicon interface .As the surface
potential of the device increase, it improves the device
performance in terms of SS and On current (Ion)current. The
subthreshold swing characteristic of ULG (underlapped Gate)
and OLG (overlapped Gate) misalignment effect were shown
in Figure 5 (b) and Figure 6; from these two Figures, the OLG
case of the proposed device enhances the subthreshold swing
characteristics by reporting less reading than the symmetric
gate structure, but the ULG structure degrades the device
performance by reporting high SS values [28-29].

(a)

46.0m
K=1(Air)

45.5m
Subthreshold Swing(mv)

45.0m

44.5m Streptavidin(K=2.1)
(Uricase K=1.57)
44.0m
Biotine(k=2.63)

43.5m Figure:6. (a) The comparison plot of subthreshold swing of the

symmetric Gate
ULGL=5 nm DM-DGH-TFET biosensor by referring to the overlapped case
43.0m ULGL=10 nm of gate misalignment effect with different biomolecules
biomolecule (Air, Uricase, streptavidin, Biotin).
1.0 1.5 2.0 2.5
Dielectric constant value of Biomolecules(K)
This is because in the ULG structure, the channel was not
(b)
Figure:5. (a) The subthreshold Swing plot for the Symmetric controlled by the particular part of the top gate, and only the
gate DM-DGH-TFET biosensor for different biomolecules bottom gate is able to control the entire channel, i.e. the ULG
(Air, Uricase, streptavidin, Biotin) (b) The comparison plot of structure increase the oxide capacitance at the interface of the
silicon; as a result, the effective surface potential is decreased
and increase the minimum subthreshold slop. But in the case constant values of the biomolecules (.(b) The comparison plot
of OLG structure, the subthreshold swing is reduced this of subthreshold sensitivity for the DGH-TFET biosensor by
because of `the high controllability of the gate over the channel considering the possible gate misalignment effects for
temporary increase the effective surface potential and different biomolecules in the cavity region(Biotin(K=2.63),
minimizes the Subthreshold swing of the device. The Streptavidin (K=2.1), Uricase (K=1.54)).
subthreshold sensitivity of the proposed device is measured by
the following mathematical relation given below. The sensitivity is measured by the above mathematical relation
for all the cases of the symmetric gate and the OLG and ULG
SS(air)-SS(bio) of the proposed DM-DGH-TFET biosensor. The subthreshold
Sensitivity (SSS) = sensitivity of the proposed biosensor by considering all the
SS(air) possible combinations of the gate misalignment for different
To measure the sensitivity, we need to consider the reference biomolecules is show in the figure 6 and After clearly
value in the absence of the biomolecule, so to represents the observing Figure 6, it is clearly indicating that the OLG
absence of biomolecules, we fill the cavity with air (K=1) and structure improves subthreshold sensitivity the proposed DM-
take this value as the reference readings and then the cavity is DGH-TFET biosensor by 40% compared to the symmetric
mad to immobilize with target biomolecules having different gate structure [29-32], whereas the ULG structure diminishes
dielectric constant values and the corresponding values are the sensitivity.
taken.

(a) (a)

(b)
(b) Figure:7. (a) Threshold voltage plot for the DM-DGH-TFET
Figure:6. (a) The subthreshold (SSS )sensitivity plot for the biosensor with all possible cases of gate misalignment for
symmetric DGH-TFET biosensor for the different dielectric different target biomolecules (Biotin(K=2.63), Streptavidin
(K=2.1), Uricase (K=1.54),Air(K=1)) (b) The threshold symmetric gate structure of the DM-DGH-TFET biosensor.
voltage sensitivity plot for the symmetric gate of DGH-TFET The underlapped gate structure shows a reduction in the
biosensor with target biomolecule Uricase (K=1.54). threshold voltage with increasing in the underlapped away
from the source-channel junction of the DM-DGH-TFET
The threshold-voltage variation for the three cases of the biosensor and it show a 50% decrement in the threshold
proposed DM-DGH-TFET biosensor is shown in Figure 7(a), voltage compared to symmetric gate structure. So this is well
along with the interpretation of different biomolecules suitable for biosensors with low threshold application. The
immobilized nano gap under the gate electrode region. The drain current severely decreases with increasing the
OLG structure of the proposed device show nearby threshold misalignment in the gate of the DM-DGH-TFET biosensor, so
voltage characteristics compared to the symmetric gate it is preferred to be the misalignment effects should be
structure, but for the case of the ULG structure, the threshold eliminated to get an ideal biosensor.
voltage is reduced as the underlapped length is increased this
is because as the underlapped length increases, it will not cove
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