Sensing and Imaging (2025) 26:25

https://doi.org/10.1007/s11220-025-00558-w

BRIEF REPORT

Analysis of Dual Material Gate InSb/Si Heterojunction

Silicon on Insulator Tunnel Field Effect Transistor
(DMG‑HJ‑SOI‑TFET) Biosensor for CREB‑2 Protein Detection

Pratikhya Raut1 · Deepak Kumar Panda2 · Ahmed Nabih Zaki Rashed3,4

Received: 21 November 2024 / Revised: 4 February 2025 / Accepted: 16 February 2025

© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature
2025

Abstract
Breast Cancer has emerged as a prominent cause of cancer-related mortality in
recent years, and it is now one of the most commonly diagnosed type of carcinoma.
Breast Cancer identification at an early stage has the potential to drastically cut mor-
tality rates by allowing for sophisticated medical therapies. The Dual Material Gate
InSb/Si (Indium antimonide/silicon) Heterojunction Silicon on Insulator Tunnel
Field Effect Transistor (DMG-HJ-SOI-TFET) device, specifically built for the label
free identification of breast cancer cells (BCC), is comprehensively examined in this
study. Dielectric modulation is used for label free detection of BCC by utilising their
distinct dielectric constant values (K). The DMG-HJ-SOI-TFET device’s hetero-
junction architecture improves both stability and sensitivity by allowing charge car-
riers to flow across different energy bands. The device employs an InSb/Si hetero-
junction with an N + pocket at the drain-channel junction. The nanocavity is formed
between the gate electrode and the channel region, towards the drain side. InSb is
utilised as a source material to increase the ON current. The simulation analysis
exhibits high sensitivity, particularly for T47D breast cancer cells, with a dielectric
constant K = 32, a subthreshold voltage of 39 mV/dec, and an on-current sensitivity
­SIon​of ­104 was achieved. The key advantages of the proposed structure are its great
flexibility, portability, minimal power consumption, and sensitivity, opening up new
opportunities for the development of highly sensitive biosensors. The device exhib-
its excellent control over the channel and reduces leakage current. The biomolecule
sensing mechanism relies on ambipolar current, which depends on the dielectric
constant of the nanocavity. Increased dielectric constant leads to improved sensitiv-
ity of the device. This biosensor exhibit enhanced sensitivity for biomolecule detec-
tion at low operating voltages, leading to significant improvements in both sensitiv-
ity and selectivity. Its ability to provide precise sensitivity assessments makes it a
promising candidate for point-of-care breast cancer diagnostics.

Extended author information available on the last page of the article

Vol.:(0123456789)
 25 Page 2 of 21 Sensing and Imaging (2025) 26:25

Keywords Breast cancer · Dielectric modulation · Heterojunction · Sensitivity ·

Silicon on insulator · TFET

1 Introduction

Modern times have witnessed a significant increase in cancer-related mortality. Can-

cer arises when uncontrolled cell development causes the invasion of neighbouring
cells and tissues. Genetic alterations also cause cancer. Tumours emerge as an unu-
sual cluster of several cell types caused by uncontrolled cell division. Cancer is clas-
sified into subtypes based on the origin of the malignant cells and where the disease
first manifests itself in the body. Colorectal, breast, and lung cancers are well-known
and common on a global scale due to their high incidence rates. Breast cancer affects
a significant proportion of women, accounting for nearly 60% of all malignancies
that affect them. Increasing the likelihood of successful therapy can have a signifi-
cant impact on cancer patients’ survival rates. Notably, technological developments
have made it possible to identify breast cancer at an earlier stage. Modern imaging
techniques, such as magnetic resonance imaging (MRI) and computed tomography
and are good instances of this advancement.
These techniques can achieve sensitivity levels ranging from 93 to 100%. None-
theless, it is critical to recognise that these tools are expensive and often only avail-
able in hospital settings. Furthermore, its operation necessitates highly competent
workers with extensive knowledge. Also, there is an urgent need to address the
healthcare needs of women living in remote rural areas by providing them with easy
access to advanced diagnostic services. This emphasises the need for a quick and
inexpensive diagnostic approach. It is generally recognised in the medical commu-
nity that a correct diagnosis comes before any sort of therapy. As a result, the cur-
rent portable biosensor emerges as a potential solution for early illness detection that
is both simple and affordable.
There are two sorts of biosensors in general: label based biosensors and label
free biosensors. Label free biosensors have gained a lot of interest because of their
simple design, low cost, and user-friendliness. The present research looks towards
label free diagnosis of breast cancer by analysing the dielectric constant (K value)
of cancer cells. [1–3]. Modern biosensors with remarkable sensitivity and selectiv-
ity have emerged as a result of rapid advances in nanotechnology and semiconduc-
tor device engineering. Among these, Tunnel Field Effect Transistors (TFETs) have
garnered a lot of interest because of their steep subthreshold slopes, high current
switching ratios, and low power consumption. TFETs have developed into extremely
effective devices for biomedical applications, such as the detection of biomolecules
like proteins, nucleic acids, and other biological markers, owing to the integration of
heterogeneous materials and sophisticated design features [4–10]. The Dual Mate-
rial Gate InSb/Si Heterojunction Silicon-on-Insulator Tunnel Field Effect Transis-
tor (DMG-HJ-SOI-TFET) biosensor is one such sophisticated structure that presents
encouraging opportunities for the detection of particular proteins, such as the cAMP
Response Element-Binding Protein 2 (CREB-2).
Sensing and Imaging (2025) 26:25 Page 3 of 21 25

ATF4, or cAMP Response Element-Binding Protein 2 (CREB-2), is a transcrip-

tion factor that controls a number of biological functions, such as metabolism, mem-
ory formation, and stress response. Numerous pathogenic illnesses, such as cancer,
metabolic diseases, and neurodegenerative disorders, have been connected to abnor-
mal expression of CREB-2 [11]. Therefore, it is essential to accurately and promptly
detect the CREB-2 protein in order to comprehend illness causes and create suc-
cessful treatment plans. Although they are dependable, traditional protein detection
techniques like western blotting and enzyme-linked immunosorbent assays (ELISA)
often require for costly chemicals, lengthy processing periods, and substantial sam-
ple preparation. As a result, there is an increasing demand for very sensitive, real-
time, label-free detection techniques, which can be accomplished with the use of
sophiscated biosensing technology.
The DMG-HJ-SOI-TFET biosensor offers a unique and effective protein detec-
tion approach in this regard. To attain improved performance metrics, this biosensor
makes use of a number of crucial elements of advanced TFET design, including as
heterojunctions, dual-material gate architecture, and silicon-on-insulator (SOI) con-
figuration. Reduced short-channel effects and enhanced current driving capabilities
are the results of the dual-material gate (DMG) design’s contribution to better elec-
trostatic control over the channel. The device’s sensitivity is greatly increased by the
high band-to-band tunnelling rate that is guaranteed by the heterojunction that forms
between silicon (Si) and indium antimonide (InSb). The performance of the bio-
sensor is further enhanced by the SOI structure’s improved isolation and decreased
parasitic capacitance.
The DMG-HJ-SOI-TFET biosensor’s operation is based on the modification of
the tunnelling current when the target biomolecule—in this example, the CREB-2
protein—is present. The binding event causes a change in the surface potential,
which in turn modifies the band-to-band tunnelling current when the biosensor sur-
face is interacts with certain receptor molecules that bind to CREB-2 specifically.
Highly sensitive and quantitative detection is made possible by the measurement
and correlation of this change in current with the amount of CREB-2 present in the
sample. Because of its high electron mobility and narrow bandgap, InSb is a perfect
choice for high-performance TFET-based biosensors and its integration improves
tunnelling efficiency. FET based biosensors are gaining popularity and are gradu-
ally replacing traditional laboratory-based diagnostic methods, particularly among
doctors and technicians who prefer their quick and exact results. Ion sensitive FET
based biosensors have received extensive attention due to their enhanced reactivity
to charged biomolecules. However, their sensitivity decreases when they come into
contact with biomolecules that lack charges.
Both conditions favour dielectrically controlled field-effect transistors.A DM-
FET (Dielectrically Modified Field-Effect Transistor) is different from a regular
FET because it has a cavity near the edge of the gate dielectric where the target
molecules can interact. MOSFETs (Metal–Oxide–Semiconductor Field-Effect Tran-
sistors) have limitations such as a low switching current ­(Ion/Ioff) ratio, a significant
leakage current and a subthreshold swing, and which significantly restrict their ver-
satility. This study presents a TFET based (Tunnel Field Effect Transistor) biosensor
for cancer detection [12–20] to address the limitations encountered by conventional
 25 Page 4 of 21 Sensing and Imaging (2025) 26:25

FETs. However, ambipolar conduction and a low on current (­ Ion) are disadvantages
of TFETs. The TFET device is comprised of two tunnelling junctions that gener-
ate drain current for any gate bias voltage, resulting in undesirable negative gate
bias and ambipolar conduction. This dual conduction mode is unsuitable for digital
applications, necessitating the investigation of optimal ways to customise the device
for these applications, a situation that is inversely related to medical diagnostics
[21–25].
Numerous research works have investigated the application of TFET devices
for biomolecule detection via ambipolar conduction Their major goal is to detect
diseases in their early stages. For specific purposes, the proposed approach in this
study uses a heterojunction TFET device with indium antimonide (InSb) as the
source material. InSb has a narrower energy gap (about 0.17 eV) than other materi-
als, greater carrier mobility, and a lower effective mass. Because of its low tunneling
barrier, InSb has a greater Band-to-Band Tunnelling (BTBT) transmission rate than
silicon (Si) and germanium (Ge). As a result, TFETs based on InSb/Si can achieve
minimal subthreshold swing and high I­ on current values at the same time. The simu-
lated InSb/Si TFET consists of an N ­ + pocket in the drain region that has greater
doping levels than the drain doping. The use of InSb on the source side shortens
the overall tunnelling distance for charge carriers at the primary tunnelling junction.
This effect, known as source-channel interference, increases the I­ on current substan-
tially [26–31]. The device’s gate dielectric oxide layer is comprised of aluminium
oxide ­(Al2O3), which has a permittivity close to 10. A material’s permittivity is 0
in a vacuum. A ­ l2O3 reduces the leakage current of the simulated device because its
dielectric constant is greater than silicon dioxide’s ­(SiO2) without affecting the oxide
band gap [28–30]. Also, ­Al2O3 has a larger band gap than silicon dioxide. It is feasi-
ble to enhance the physical thickness of the gate dielectric without sacrificing charge
sensitivity by using A­ l2O3, a dielectric material with a high dielectric constant (K).
When compared to traditional biosensors, those based on S ­ iO2 offer a num-
ber of significant advantages. These benefits include improved homogeneity,
increased durability, surface protection, lower defect density, nanoscale scal-
ability, and improved sensitivity and precision. In terms of detection sensitivity
and accuracy, these devices represent a major advancement over typical planar
designs. Apart from these this proposed structure provides numerous benefits,
including rapid detection, the ability to be implanted, and portability for biosens-
ing applications. Furthermore, the proposed bio sensing device can be seam-
lessly incorporated into microdevices by wireless integration, enabling the timely
identification of diseases. InSb/Si TFETs can perform significantly better than Si
TFETs in the context of tunnel field-effect transistors (TFETs), especially in terms
of subthreshold swing, drive current, and power efficiency. Compared to silicon,
InSb/Si TFETs have a lower bandgap and higher electron mobility. As a result,
there is a lower off state leakage and faster switching due to a reduced subthresh-
old swing. The device’s overall efficiency is enhanced by the increased tunnelling
current and higher drive currents that result from the higher electron mobility
and smaller effective mass in InSb. The improved subthreshold swing and drive
current result in increased power efficiency, rendering them more suitable for
low-power applications. In applications where power efficiency and performance
Sensing and Imaging (2025) 26:25 Page 5 of 21 25

are critical, such as mobile devices, IoT devices, and high-performance comput-
ing, the performance improvements in InSb/Si TFETs can be crucial. There are
numerous reasons why the increased complexity of fabrication can be justified
by the improved performance. High performance and efficiency are frequently
required by advanced applications, which can be met by InSb/Si TFETs.The ini-
tial investment in more intricate fabrication techniques can be counterbalanced
by the long-term advantages of improved performance and reduced power con-
sumption. By providing superior products, companies can establish a competitive
advantage in the market by incorporating advanced technologies such as InSb/Si
TFETs.
In order to tackle the heightened intricacy of InSb/Si TFETs’ fabrication, a num-
ber of sophisticated fabrication techniques can be utilised: these include Epitaxial
Growth, which involves the growth of superior InSb layers on silicon substrates
via molecular beam epitaxy (MBE) and metal–organic chemical vapour deposition
(MOCVD), as well as Heterogeneous Integration like advanced bonding and inte-
gration methods can be developed to combine InSb and Si layers more effectively. A
cavity has been included as a critical component of the dielectric modulation process
to allow biomolecules to flow freely. Changes in this context have a direct impact on
the device’s surface potential variation, which is influenced by the dielectric con-
stant (K) of the target biomolecules immobilised within the device’s cavity region.
The immobilisation of cancer cells in this area has an impact on the device’s oxide
capacitance, changing its electrical properties. This study focuses on the develop-
ment of ambipolar currents, which have the potential to be used in biosensing.
To tackle these scalability challenges, various strategies may be evaluated:
Alternative Deposition Technique such as Atomic layer deposition (ALD) and
plasma-enhanced chemical vapour deposition (PECVD) present scalable and cost-
effective solutions. These methods enable effective control of thin-film deposi-
tion and can be modified for high-throughput production through suitable process
optimisation.
A hybrid strategy that integrates high-precision techniques such as MBE or
MOCVD for essential layers, particularly those necessitating atomic-level accuracy,
alongside more economical methods for non-essential layers, may provide an effec-
tive equilibrium between performance and manufacturability.
Standardisation and process automation in MBE and MOCVD processes enhance
consistency, reduce variability, and decrease reliance on skilled operators. This may
enhance yield and decrease total costs.
So, Research into innovative materials and deposition techniques that can achieve
the performance of InSb/Si heterojunctions, while facilitating easier and more scal-
able fabrication, is crucial. Advancements in the synthesis and integration of nano-
materials may facilitate the development of cost-effective biosensor manufacturing.
The paper is organised as follows: Section II outlines a comprehensive descrip-
tion of the device’s structure, including specific parameters and simulation models.
In Section III, a thorough and methodical examination of the results is presented,
with a particular emphasis on the device’s sensitivity and selectivity. Section IV
explores the impact of biomolecule fill factor and steric hindrance on sensitivity.
Finally, the concluding remarks have been briefly summarised in section V.
 25 Page 6 of 21 Sensing and Imaging (2025) 26:25

2 Device Structure and Simulation Set up

A two-dimensional structure of a biosensor based on a dual-material DMG-HJ-

SOI-TFET architecture with dielectric modulation is shown in Fig. 1. Si is doped to
1 × ­1018 ­cm−3 in the channel and drain areas, and 1 × ­1019 ­cm−3 in the source region,
InSb is doped to a concentration of 1 × ­1018 ­cm−3. A 5 × ­1018 ­cm−3 ­N+ doped pocket
is added at the channel’s drain junction in order to reduce ambipolar conduction.
The purpose of this pocket is to lessen ambipolar conduction inside the device.
The gate material is made of two different metals with differing work functions
(ФM1 = 4.1 eV and ФM2 = 4.9 eV), which enables gate engineering integration into
the proposed biosensor. By improving ­Ion and decreasing ambipolar current, this
work function difference regulates the effective tunnelling length at the device’s two
tunnelling junctions. This work function difference enhances Ion and reduces ambi-
polar current, effectively regulating the effective tunnelling length at both tunnelling
junctions in the device. When compared to traditional planar designs, the proposed
design yields steady performance and greatly enhances TFET device performance.

Fig. 1  a 2D structural arrange-

ment of simulated DMG-HJ-
SOI-TFET Biosensor b Calibra-
tion of the proposed device
using the experimental findings
presented by Woo Young et al.
Sensing and Imaging (2025) 26:25 Page 7 of 21 25

Two strategically placed nano-cavities are used in the configuration shown in

Fig. 1 to immobilise the target biomolecules. Each of these cavities have the same
length (10 nm) and thickness of 4 nm. ­SiO2 is used as an adhesive coating in the hol-
low area of the device to bind cancer cells within its nano-region. Because of A­ l2O3
higher sensitivity than S
­ iO2, it has become the preferred gate dielectric in the con-
text of nanoscale FET-based biosensors. The lattice mismatch factor between two
materials is given by the Eq. (1)
𝛼substrate − 𝛼epilayer
LatticeMismatch(%) = × 100% (1)
𝛼substrate

where, 𝛼substrate is the lattice constant of the substrate material and 𝛼epilayer is the lat-
tice constant of the epilayer material.
So here substrate is silicon whose value is 5.431A˚
Lattice constant of Indium Antimonide (InSb): = 6.479 A˚
Substituting the values in the above equation we get the value for lattice mis-
match as − 19.29%.
The lattice mismatch between InSb and Si (~ 19.29%) can cause strain in the
epitaxial InSb layer, resulting in defects like dislocations that decrease device per-
formance. Using graded buffer layers and optimised growth processes can assist
manage strain and defects. Surface states and interface traps at the InSb/Si inter-
face or the dielectric/semiconductor interface can trap charge carriers, influencing
the threshold voltage, subthreshold swing, and overall device stability. However, by
using proper surface passivation and high-quality gate dielectrics, these impacts can
be minimised. Also Non-ideal band-to-band tunnelling at the source/channel junc-
tion can cause leakage currents, especially at higher temperatures, lowering the
device’s off-state performance; however, utilising high-k dielectrics and guarantee-
ing high-quality deposition can assist limit gate leakage. InSb/Si Heterojunction SOI
TFET (DMG-HJ-SOI-TFET) offers promising advantages by optimizing the influ-
encing factors can be crucial for achieving high performance and reliability in prac-
tical applications as well as in for biosensing applications. Table 1 provides a com-
prehensive list of specified parameters for the dimensions of the simulated structure.
Table 2 also provides a reference list of target breast cancer cells together with

Table 1  Simulation Parameters Parameter Value

Box Thickness ­(Tbox) 6 nm

Gate dielectric Thickness ­(TAl2O3) 6 nm
Channel Length ­(Lchannel) 30 nm
Source Dimension ­(Lsource) 25 nm
Drain Dimension ­(LDrain) 25 nm
N+ Pocket Length ­(Lpockets) 10 nm
N+ Pocket Thickness ­Tpockets) 5 nm
Substrate thickness (Tsi) 10 nm
Gate Oxide Length ­(LAl2O3) 15 nm
Cavity Length (­ LBio1, ­LBio2) 10 nm,10 nm
 25 Page 8 of 21 Sensing and Imaging (2025) 26:25

Table 2  List of Breast Cancer Breast Cancer The K value of

Biomolecules with a K values biomolecule biomolecules

T47D 32
MCF-10A 4.5
MDA-MB-231 24.5
MCF7 27.5
HS578t 22

non-cancerous breast biomolecules. For device simulation, the Synopsys TCAD tool
[32] is used, incorporating effective models such as, non-local BTBT, SRH, Fermi
Dirac, Auger and field-dependent mobility models and Lombardi CVT and explana-
tion for each model has been discussed below:
Non-local BTBT- The non-local band-to-band tunnelling (BTBT) model is a
sophisticated approach that is employed in semiconductor device simulations to
more precisely describe the tunnelling process. It considers the entire spatial area
where the tunnelling process takes place, accounting for the several possible land-
scapes inside the device. A more comprehensive explanation of the tunnelling pro-
cess is given by accounting for the variations in the energy bands over a spatial
region. Also considers the distribution of carriers across a spatial region, acknowl-
edging that carriers may tunnel from various points in the source to the drain.
SRH Model- The Shockley–Read–Hall (SRH) model is a fundamental frame-
work utilised to explain the process of recombination and creation of charge car-
riers in semiconductors. This occurs through the presence of defect states, some-
times referred to as trap states, located within the band gap. The importance of this
model lies in its ability to comprehend the non-ideal consequences in semiconductor
devices, including leakage currents and diminished carrier lifetimes. These effects
have a substantial influence on device performance, particularly in devices like Tun-
nel FETs (TFETs) and biosensors.
Fermi Dirac-The Fermi–Dirac model is a statistical distribution model that
explains the behaviour of particles, namely electrons, which adhere to the Pauli
exclusion principle. This principle states that no two fermions may occupy the
same quantum state at the same time. This model is crucial for comprehending the
behaviour of electrons in semiconductors, metals, and other systems where quantum
mechanical phenomena play a key role.
Auger and Field Dependant Mobility Model-Auger recombination is a non-
radiative phenomenon in which the energy released during the recombination of
an electron–hole pair is transferred to another carrier, causing it to get excited and
reach a higher energy level. This procedure is crucial in semiconductors with sub-
stantial amounts of doping and in devices that operate with high injection levels,
such as LEDs and laser diodes. The electric fields of Tunnel Field-Effect Transis-
tors (TFETs) can reach significant magnitudes, particularly in close proximity to
the tunnelling junction. To effectively simulate carrier movement in these locations,
field-dependent mobility models are necessary. The on-state current of the device
Sensing and Imaging (2025) 26:25 Page 9 of 21 25

can be limited by velocity saturation effects, which in turn can have an impact on the
device’s switching speed and overall performance.
Lombardi CVT (Constant Voltage and Temperature) Model -This model is
employed in the field of electronics to describe the behaviour of specific devices,
particularly semiconductor devices, under constant voltage and temperature
conditions.
Air (k≈1) is commonly used as a reference medium due to its low dielectric con-
stant, offering a distinct contrast when biomolecules (k≈3–10) interact with the sen-
sor. These biomolecules attach to the surface through various mechanisms, includ-
ing physical adsorption (via van der Waals forces and hydrophobic interactions),
chemical adsorption (through covalent bonding and ionic interactions), and specific
binding (such as antibody-antigen interactions). All simulations were conducted
under equilibrium conditions.

3 Device Fabrication

Figure 2 illustrates the fabrication procedures for the proposed structure. The process
commences with a p-type silicon wafer, which is then subjected to thermal oxidation
to produce a buried oxide (BOX) ­SiO2 layer. A specific area of the buried oxide
layer will be covered with p-silicon. This is followed by the doping of InSb onto the
remaining buried oxide layer. Oxidation and selective etching are performed to dope
the drain with arsenic impurities. Next, an n-doped drain pocket is grown toward the
drain region using MBE or LPCVD techniques at temperatures below 750 °C. S ­ iO2
is deposited in a specific region to form an adhesive layer that binds biomolecules.
The atomic layer deposition technique is then employed to deposit an ­Al2O3 layer at
300 °C. E-beam evaporation is employed to create metal contacts. Finally, a nano-
cavity is created by etching away the ­Al2O3 layer above the adhesive ­SiO2 layer.
The dual material gate configuration involves precise control of gate length and
alignment. Misalignment or process variation can produce non-uniform electric
fields, influencing tunnelling probability and sensitivity. But overall DMG structure

Fig.2  Brief process flow for the fabrication of the proposed biosensor Ref [33]
 25 Page 10 of 21 Sensing and Imaging (2025) 26:25

has considerable advantages since it allows for better control over the threshold volt-
age and enhances the electric field at the heterojunction, boosting the ON-state cur-
rent and subthreshold swing.
SOI technology can introduce parasitic capacitances that degrade device perfor-
mance, especially in high-frequency biosensing applications. But it provides supe-
rior isolation, reducing leakage currents and allowing for ultra-low power operation.
This makes it ideal for applications that require long-term, continuous biosensing.
Low TFET current values reduce the sensor’s signal-to-noise ratio (SNR) by making
it more vulnerable to outside noise but can attain a high SNR with the right signal
processing and noise reduction methods. Also, TFETs’ low OFF-state current pro-
vides very low standby power consumption, which is a major benefit for biosensors
that are powered by batteries.

4 Results and Discussion

For verifying the precision of the simulation results, the device is calibrated against
the experimental data illustrated by Woo Young Choi et al. [11], as shown in
Fig. 1(b). This section thoroughly evaluates the device’s performance across various
simulation results. Notably, the proposed device closely corresponds to the experi-
mental results, affirming the soundness of the proposed methodology for designing
the device.
The proposed TFET device enables label free identification of target cancer cells
using continuous dielectric measurements. Figure 1(b) depicts the model device in
cross-section, with chambers on both sides of the gate electrode capable of accom-
modating a higher quantity of the charged target sample. The device fabrication
phases are depicted in Fig. 2, and several advanced approaches are available to gen-
erate a highly exact device structure, simplifying the physical fabrication process
while ensuring cost-effectiveness.
Figure 3(a) represents the drain current plot of the proposed device for various
BCC values.The gate control on the channel area and the gate potential supplied
both influence the discharge current of the TFET device. This is achieved by modi-
fying the tunnelling barrier length at the source-channel junction. The reason for
this is that the proposed step channel structure of the device effectively increases
the (Ion) current and suppresses the ambipolar currents. The currents of these two
TFET devices are used to measure the sensitivity of the device. The ambipolar and
leakage currents were reduced by the step channel structure, which was proposed
for the device. In order to immobilise the target biomolecules, additional cavity over
the reduced channel thickness was created. Initially, the effective tunnelling width is
reduced by the increase in the K value of the target BCC in the cavity region over
the primary tunnelling junction, which in turn increases the on current of the device.
In reaction to fluctuations in the BCC’s K value, the dual cavity design influ-
ences both tunnelling junctions of the device. As a result, with larger K values
associated with the target biomolecules, the device exhibits a higher drain cur-
rent. The device is designed with a ­N+ pocket that is substantially doped com-
pared to the drain doping, resulting in a differential in doping concentration
Sensing and Imaging (2025) 26:25 Page 11 of 21 25

Fig. 3  a Drain current plot b Surface Potential plot of proposed biosensor for various cancer biomol-
ecules

within the drain region. As seen in Fig. 3(a), this mismatch increases the tun-
nelling junction width at the secondary tunnelling junction, thereby reducing the
ambipolar current.
Figure 3(b) depicts the potential energy distribution for the proposed device
across multiple cancer protein molecules. The figure shows how an increase in
the K value of the target biomolecule effects the device’s net potential, conse-
quently enhancing the biosensor’s sensitivity.
As the K value of the target biomolecules increases a more noticeable influ-
ence is detected beneath the device’s gate dielectric, resulting in an increase in
net charge and, as a result, an increase in the device’s potential. This phenomenon
is vividly depicted in Fig. 4, which depicts the device’s electric field and poten-
tial distribution. Notably, the electrical properties of the device, particularly the

Fig. 4  Electric field distribution plot along the channel of Proposed DMG-HJ-SOI-TFET Biosensor of
DMG-HJ- SOI-TFET device
 25 Page 12 of 21 Sensing and Imaging (2025) 26:25

electric field and potential distribution, show improved stability when the K value
of the cancer biomolecule increases.
The proposed device’s exceptional sensitivity to changes in the surface elec-
tric field is highlighted by the visualisation of the electric field. The device has
a great sensitivity, which allows it to detect even minor changes in the K value
of cancer cells within the cavity. This increased sensitivity is due to the intrin-
sic heterogeneity of the devices employed in biosensor fabrication. The device
achieves a subthreshold swing (SS) of 38 mV/Dec for the T47D cancer cell with a
K value of 32, as shown in Fig. 5.
Figure 5 depicts the variance in the proposed biosensor’s subthreshold swing
and corresponding subthreshold sensitivity throughout the specified BCC. This
figure depicts the device’s sensitivity and the modified the electrical param-
eters to obtain measurable sensitivity, allowing the detection of unknown tar-
get biomolecules in the provided sample. It clearly shows how changes in the
device’s electrical properties can be used to plot its sensitivity. Figure 6 depicts
the proposed device’s subthreshold sensitivity ­(SSS) for the target BCC specified
in Table 2 separately for a more focused assessment of the device’s performance
in terms of subthreshold sensitivity. The subthreshold sensitivity has been calcu-
lated by using the formula given in the Eq. (2) below.
SS(air) − SS(bio)
SSS = (2)
SS(air)

In Fig. 7, the on-current of the device is depicted, showing a linear increase

in the on current ­(Ion) corresponding to an increment in the K value of the can-
cer biomolecules. The on-current sensitivity (­SIon) of a device is calculated
using a previously developed sensitivity Eq. (2), with the switching current

Fig. 5  Subthreshold slope (SS) and sensitivity ­(SSS) plot of the simulated device
Sensing and Imaging (2025) 26:25 Page 13 of 21 25

Fig. 6  Sensitivity (SSS) plot of proposed DMG-HJ- SOI-TFET Biosensor

Fig. 7  Ion plot for the DMG-HJ-

SOI-TFET device, considering
different types of breast cancer
cells

parameter replaced by the device’s Ion parameter. Figure 8 depicts the related ­SIon
plot.
Because of its heterostructure, the proposed device has a superior threshold
voltage characteristic. The corresponding sensitivity is shown in Fig. 8. The
device shows a wide range of sensitivity to threshold voltage alterations caused
by differences in the quantity of target cancer cells in the cavity region, as
depicted in the Fig 8. The change in the threshold voltage of the device is used for
calculating the sensitivity of the biosensor by using the following relation given
by equation (3)
 25 Page 14 of 21 Sensing and Imaging (2025) 26:25

Fig. 8  Threshold voltage

sensitivity ­(Svth) plot for the
DMG-HJ-SOI-TFET device,
considering different types of
BCC

Vth (bio) −Vth (air)

SVth = (3)
Vth (air)

The sensitivity of the device to even small changes in the K value, resulting from
the introduction and placement of a non-cancerous cell inside the cavity, is demon-
strated in Fig. 8. Biomolecules with altered K values have a higher net charge at the
oxide and semiconductor surfaces. As a result, this lowers the intrinsic potential and
requires a lower gate bias to turn on the device.
Because target biomolecules have a constant dielectric selectivity, a higher
K value (K = 22, 24, 5, 27.5, 32) indicates a better device selectivity. To measure
the selectivity of the proposed device, it was assessed how well it can discriminate
among the target BCC. The non-cancerous biomolecule MCF-10A (K = 4.5) is uti-
lised as the reference to determine device selectivity.
The ­Ion selectivity and ­Ion/Ioff selectivity with a BCC in comparison to K = 4.5 are
shown in Fig. 9 and 10. The highest on-current selectivity recorded at K = 32 was

Fig.9  Ion selectivity of SOI-

TFET Biosensor derived against
the non-cancerous biomolecules
Sensing and Imaging (2025) 26:25 Page 15 of 21 25

Fig. 10  Plotting the I­ on/Ioff selec-

tivity of the proposed DMG-HJ-
SOI-TFET Biosensor

6770, demonstrating the device’s effective target biomolecule separation. Further-

more, 38.7 was the maximum ­Ion/Ioff selectivity recorded at K = 32, indicating the
device’s selectivity in distinguishing between target and reference biomolecules.
Impact of Biomolecules Fill factor on Device Sensitivity
The ideal scenario in which the target cancer biomolecules fully occupy the
device’s cavity is used to obtain the simulation results for the proposed device. But
reaching this state of scenario is difficult because of important biomolecule related
problems, such fill factor, which cause steric hindrance. The examination of multiple
non-uniform step patterns of biomolecules within the cavity region of the biosen-
sor is prompted by the steric hindrance problem. This analysis seeks to quantify the
impact and deviations from the ideal situation on sensitivity. All potential target bio-
molecule filling patterns in the cavity region of the proposed biosensor are shown
in Fig. 11. Ten distinct approaches are investigated for the filling of the biomole-
cule combination: step increases, step decreases, vertical lines with gaps, and other
variations. This extensive research aids in understanding the impact of various fill-
ing patterns on sensitivity while taking into account the limitations given by steric
hindrance.
The relationship between biomolecule occupancy and capacitance is governed
by how biomolecules alter the effective dielectric constant of the sensing region.
As biomolecules bind to the sensor surface, they replace the surrounding medium
(typically air or buffer solution) with their own dielectric properties, leading to
capacitance changes. As more biomolecules bind, the effective dielectric constant
increases, leading to a higher capacitance. The positioning and fill factor of immo-
bilised biomolecules have a significant impact on the device’s electrical properties,
impacting its sensitivity. This effect occurs when the unfilled cavity space by the tar-
get biomolecules is filled with air, resulting in a net change in the device’s K value.
The gadget detects a change in the gate dielectric constant value, indicating a varia-
tion in its electrical properties. This difference is visible in the biosensor when com-
paring a partially filled cavity to a fully filled cavity. Figure 12 (a) and (b) displays
the electrical potential and electric field of the proposed biosensor for various fill
 25 Page 16 of 21 Sensing and Imaging (2025) 26:25

Fig. 11  Different possible filling

of the target biomolecules in the
cavity of DMG-HJ-SOI-TFET
Biosensor

Fig. 12  a Electric field distribution for Different possible patterns in the cavity of DMG-HJ-SOI-TFET
device. b Surface potential distribution for different possible patterns in the cavity of DMG-HJ-SOI-
TFET device

factors. Notably, in any pattern, a partially filled cavity generates less potential than
a fully filled one. This fig shows that the device yields highly stable results even
when the cavity is just partially filled. The surface potential plot shows just a minor
change in the device’s surface potential from a fully filled cavity to a half-filled cav-
ity, highlighting the device’s robust performance.
From Fig. 12(a) and Fig. 12(b), it is evident that the relationship between
cavity thickness and sensitivity in the proposed biosensor involves a trade-off
between field concentration and biomolecule capture efficiency. A thinner cav-
ity enhances sensitivity by generating a highly concentrated electric field and
Sensing and Imaging (2025) 26:25 Page 17 of 21 25

Table 3  Comparison of Our work with the Previous Published Literatures

References LG VDS/VG Dielectric Constant (K) Ion sensitivity

36 50 nm 0.5/0.5 12 450
37 50 nm 0.8/0.8 12(neutral)
12(negative)
12(positive) 4.351 × ­108
(neutral)
1.03 × ­108(negative)
1.514 × ­109(positive)
38 10 µm -1.5/3.0 12 12.57
Our Work 15 0.5/0.5 32 (T47D) 6770

Fig. 13   a On current sensitivity b Switching current sensitivity plot for different possible patterns in the
cavity of DMG-HJ-SOI-TFET Biosensor.

strong evanescent field interactions, making it more responsive to small dielec-

tric changes. However, its limited space restricts biomolecule binding, poten-
tially reducing overall detection efficiency. Conversely, a thicker cavity allows for
greater biomolecule adsorption, increasing total detection capacity but dispers-
ing the electric field over a larger volume, thereby reducing sensitivity to minor
dielectric variations. While thin cavities are ideal for single-molecule detection,
thicker cavities are more suitable for bulk detection. To achieve an optimal bal-
ance between sensitivity and biomolecule binding, an intermediate cavity thick-
ness—approximately half the evanescent field penetration depth—
can be chosen based on the specific biosensing application. Table 3 provides a
comparative analysis with existing biosensing studies.
Figure 13 illustrates the ­Ion current and switching current ­(Ion/Ioff) sensitivity
plot for different possible patterns in the cavity of the DMG-HJ-SOI-TFET Bio-
sensor. To measure the sensitivity of the simulated DMG-HJ-SOI-TFET biosen-
sor, we use the current ratio as one of the parameters, and the following Eq. (4)
gives the relation to measuring the device sensitivity.
 25 Page 18 of 21 Sensing and Imaging (2025) 26:25

I Ion (Bio)_I Ion (Air)

Ioff Ioff
S Ion = (4)
Ioff I Ion (Air)
Ioff

This figure reveals that biomolecules filling the cavity near the tunneling junction
exert a higher impact compared to those filling away from the tunneling junction.
The cavity filled near the tunneling junction effectively reduces the tunneling length
of the charge carrier, influencing the dielectric constant value of the biomolecules.
Consequently, cavity filling near the tunneling junction has a more pronounced
impact than other filled patterns of the target biomolecules.
In conclusion, the proposed device shows potential for measuring pertinent can-
cer biomolecules. It offers the possibility of producing a simple one-ended device
that could replace Point-of-Care Testing (PoCT) equipment. By creating proper
transduction and sensor measures for biomolecules, this discovery holds potential
for identifying cancer and chronic disorders.
Table 4 show the Comparison of different linearity and nonlinearity parameters
of the proposed device (DMG-HJ-SOI-TFET) and DMG-Si -TFET. From this table
it is observed that DMG-HJ-SOI-TFET shows better linearity and optimum bias
point. Hence our proposed biosensor will show good linearity.

5 Conclusion

In this manuscript, a Dual Material Gate InSb/Si Hetero Junction SOI-TFET (DMG-
HJ-SOI-TFET) based biosensor for label-free detection of breast cancer cells is
introduced. This biosensor has improved sensitivity for biomolecule detection at low
working voltages, resulting in significant increases in both sensitivity and selectiv-
ity values. Because the device ensures precise sensitivity assessments, it is a good
choice for point-of-care breast cancer testing. The simulated biosensor has a high
sensitivity, especially for T47D breast cancer cells, with a K value of 32 and a sub-
threshold voltage of 39 mV/dec and an on-current sensitivity ­(SIon) of ­104. The pro-
posed TFET biosensor has a high sensitivity that is robust, making it suitable for
low-power operation and efficient disease diagnostics with minimal power usage.
This efficiency makes it ideal for battery-operated biomedical diagnostic devices,
where power constraints are crucial. "These characteristics all contribute to the

Table 4  Comparison of different Parameter DMG-HJ-SOI-TFET DMG-Si -TFET

linearity and nonlinearity
parameters of the proposed gm3(A/V3) 2.9 9.8
device (DMG-HJ-SOI-TFET)
and DMG-Si -TFET TFP(GHz/V) 10.9 48.6
VIP2(V) 2.1 43
VIP3(V) 5.8 9.4
IIP3(dBm) -38 -30
Sensing and Imaging (2025) 26:25 Page 19 of 21 25

creation of a highly effective instrument for testing breast cancer cells. This device
has the potential to bring in a new era of cancer testing at the point of care in the
near future, allowing for faster and real-time diagnosis even in geographically iso-
lated regions.

Author contributions The work is done by Dr Pratikhya Raut and Dr. Deepak Panda made the writing
and editing this manuscript. Dr Ahmed Nabih helps in revising the manuscript.

Funding There is no funding received for performing this research work.

Data Availability No datasets were generated or analysed during the current study.

Declarations
Competing Interest The authors declare no competing interests.

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Authors and Affiliations

Pratikhya Raut1 · Deepak Kumar Panda2 · Ahmed Nabih Zaki Rashed3,4

* Deepak Kumar Panda

deepakiitkgp04@gmail.com
1
Department of ECE, Velagapudi Ramakrishna Siddhartha Engineering College Deemed to be
University, Kanuru, Vijayawada, Andhra Pradesh, India
2
Department of ECE, Amrita School of Engineering Amaravati, Amrita Vishwa Vidyapeetham,
Amaravati, Andhra Pradesh 522503, India
3
Electronics and Electrical Communications Engineering Department, Faculty of Electronic
Engineering, Menoufia University, Shibin el Kom 32951, Menoufia, Egypt
4
Department of VLSI Microelectronics, Saveetha School of Engineering, Saveetha Institute
of Medical and Technical Sciences, SIMATS, Saveetha University, Chennai, India