High Efficiency

For LED Backlight 2ch LED Driver IC

BL0200 Series

General Descriptions Package

BL0200 series are 2ch output LED driver IC for LED SOP18
backlight, and it can do dimming to 0.02 % by external
PWM signal.
This IC realizes a high efficiency by the boost
convertor control that absorbs variability on VF.
The product easily achieves high cost-performance
LED drive system with few external components and
enhanced protection functions.

Features and Benefit Not to scale

Boost convertor Lineup

● Current-Mode type PWM Control
● PWM frequency is 100 kHz o r 200 kHz VREG
Products Frequency Built-in Function
● Maximum On Duty is 90 % Accuracy
BL0202C 200 kHz Enable Function of
LED current control ± 1.5 %
BL0202B 100 kHz IC
● Individual PWM Dimming Control
● Analog Dimming BL0200C 200 kHz ±2% Error Signal Output
● High contrast ratio is 1 / 5000
● Accuracy of Reg output voltage is ± 1.5 % or ± 2 %
Applications
Protection functions
● Enable Function of IC (BL0202B, BL0202C) ● LED backlights
● Error Signal Output (BL0200C) ● LED lighting etc.
● Overcurrent Protection for Boost Circuit (OCP)
----------------------------------------------Pulse-by-pulse
● Overcurrent Protection for LED Output (LED_OCP)
----------------------------------------------Pulse-by-pulse
● Overvoltage Protection (OVP) ----------- Auto restart
● Output Open/Short Protection ------------ Auto restart
● Thermal Shutdown (TSD)----------------- Auto restart

Typical Application Circuit

BL0202B/C BL0200C
VCC DRV1 VCC DRV1

VREF OC1 VREF OC1

PWM1 PWM1
PWM2 SW1 PWM2 SW1
EN ER
IFB1 IFB1

DRV2 DRV2

OC2 OC2

REG REG
OVP OVP
COMP1 COMP1
SW2 SW2
COMP2 COMP2
GND IFB2 GND IFB2

TC_BL0202_1_R1 TC_BL0200C_1_R1

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CONTENTS
Lineup ----------------------------------------------------------------------------------------- 1
Applications ---------------------------------------------------------------------------------- 1
1. Absolute Maximum Ratings --------------------------------------------------------- 3
2. Electrical characteristics ------------------------------------------------------------- 4
3. Functional Block Diagram ----------------------------------------------------------- 6
4. Pin List Table --------------------------------------------------------------------------- 7
5. Typical Application Circuit --------------------------------------------------------- 8
6. Package Diagram ---------------------------------------------------------------------- 9
7. Marking Diagram --------------------------------------------------------------------- 9
8. Functional Description -------------------------------------------------------------- 10
8.1 Startup Operation（BL0200C） -------------------------------------------- 10
8.2 Startup Operation（BL0202B, BL0202C） ------------------------------ 11
8.3 Constant Current Control Operation ----------------------------------- 12
8.4 PWM Dimming Function -------------------------------------------------- 13
8.5 Gate Drive --------------------------------------------------------------------- 13
8.6 Error Signal Output Function (BL0200C) ----------------------------- 14
8.7 Protection Function --------------------------------------------------------- 14
9. Design Notes --------------------------------------------------------------------------- 18
9.1 Peripheral Components ---------------------------------------------------- 18
9.2 Inductor Design Parameters----------------------------------------------- 18
9.3 PCD Trace Layout and Component Placement ----------------------- 19
10. Reference Design of Power Supply ----------------------------------------------- 21
10.1 BL0202B ----------------------------------------------------------------------- 21
10.2 BL0200C ----------------------------------------------------------------------- 23
OPERATING PRECAUTIONS -------------------------------------------------------- 25
IMPORTANT NOTES ------------------------------------------------------------------- 26

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1. Absolute Maximum Ratings

 The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC.
 Unless otherwise specified, TA is 25 °C
Test
Parameter Symbol Pins Rating Unit Notes
Conditions
REG Pin Source Current IREG 1–9 −1 mA
OVP Pin Voltage VOVP 2–9 − 0.3 to 5 V
PWM1 Pin Voltage VPWM1 3–9 − 0.3 to 5 V
Single pulse
IFB1 Pin Clamp Current IFB1 5 µs
5–9 − 10 mA
OC1 Pin Voltage VOC1 6–9 − 0.3 to 5 V
DRV1 Pin Voltage VDRV1 7–9 − 0.3 to VCC + 0.3 V
SW1 Pin Voltage VSW1 8–9 − 0.3 to VCC + 0.3 V
VCC Pin Voltage VCC 10 – 9 − 0.3 to 20 V
SW2 Pin Voltage VSW2 11 – 9 − 0.3 to VCC + 0.3 V
DRV2 Pin Voltage VDRV2 12 – 9 − 0.3 to VCC + 0.3 V
OC2 Pin Voltage VOC2 13 – 9 − 0.3 to 5 V
Single pulse
IFB2 Pin Clamp Current IFB2 14 – 9 − 10 mA
5 µs
PWM2 Pin Voltage VPWM2 16 – 9 − 0.3 to 5 V
BL0202B
EN Pin Voltage VEN 17 – 9 − 0.3 to 5 V BL0202C
ER Pin Voltage VER 17 – 9 − 0.3 to VREG V BL0200C
VREF Pin Voltage VREF 18 – 9 − 0.3 to 5 V
Operating Ambient Temperature Top − − 40 to 85 °C
Storage Temperature Tstg − − 40 to 125 °C
Junction Temperature Tj − 150 °C

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2. Electrical characteristics
 The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC.
 Unless otherwise specified, TA is 25 °C, VCC = 12 V
Test
Parameter Symbol Pins Min. Typ. Max. Unit Notes
Conditions
Start / Stop Operation
Operation Start Voltage* VCC(ON) 10 – 9 8.5 9.6 10.5 V
BL0202B
7.8 8.6 9.2 BL0202C
Operation Stop Voltage VCC(OFF) 10 – 9 V
8.0 9.1 10.0 BL0200C
Circuit Current in Operation ICC(ON) 10 – 9 − 5.3 8.0 mA
Circuit Current in
ICC(OFF) VCC = 7.5 V 10 – 9 − 70 200 µA
Non-Operation
BL0202B
4.925 5.000 5.075 BL0202C
REG Pin Output Voltage VREG 1–9 V
4.9 5.0 5.1 BL0200C

Oscillation

fPWM1 7–9 95 100 105 BL0202B

PWM Operation Frequency kHz
fPWM2 12 – 9 190 200 210
BL0200C
BL0202C
DMAX1 7–9
Maximum ON Duty 85 90 95 %
DMAX2 12 – 9
tMIN1 7–9
Minimum ON Time 200 310 400 ns
tMIN2 12 – 9
COMP Pin Voltage at VCOMP1(ON) 4–9
0.35 0.50 0.65 V
Oscillation Start VCOMP2(ON) 15 – 9
COMP Pin Voltage at VCOMP1(OFF) 4–9
0.10 0.25 0.40 V
Oscillation Stop VCOMP2(OFF) 15 – 9
VREF / IFB Pin
VREF Pin Minimum Setting
VREF(MIN) VREF = 0 V 18 – 9 0.05 0.25 0.45 V
Voltage
VREF Pin Maximum Setting
VREF(MAX) VREF = 5 V 18 – 9 1.75 2.00 2.35 V
Voltage
IFB Pin Voltage at COMP VIFB1(COMP1) 5–9
VREF = 1 V 0.55 0.60 0.65 V
Charge Switching VIFB2(COMP2) 14 – 9
IFB Pin Overcurrent Protection VIFB1(OCH) 5–9
3.8 4.0 4.2 V
High Threshold Voltage VIFB2(OCH) 14 – 9
IFB Pin Overcurrent Protection VIFB1(OCL) 5–9
VREF = 1 V 1.9 2.0 2.1 V
Low Threshold Voltage VIFB2(OCL) 14 – 9
IFB Pin Overcurrent Protection VIFB1(OCL-OFF) 5–9
VREF = 1 V 1.5 1.6 1.7 V
Release Threshold Voltage VIFB2(OCL-OFF) 14 – 9
IFB Pin Voltage at Auto Restart VIFB1(AR) 5–9
VREF = 1 V 0.45 0.50 0.55 V
Operation VIFB2(AR) 14 – 9
IIFB1(B) VIFB1 = 5 V 5–9
IFB Pin Bias Current − − 1 µA
IIFB2(B) VIFB2 = 5 V 14 – 9
BL0202B
Current Detection Threshold VIFB1 5–9 0.98 1.00 1.02 BL0202C
VREF = 1 V V
Voltage VIFB2 14 – 9 0.985 1.000 1.015 BL0200C

COMP Pin
COMP Pin Maximum Output VCOMP1(MAX) VIFB1 = 0.7 V 4–9
4.8 5.0 − V
Voltage VCOMP2(MAX) VIFB2 = 0.7 V 15 – 9

* VCC(ON) > VCC(OFF)

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Test
Parameter Symbol Pins Min. Typ. Max. Unit Notes
Conditions
COMP Pin Minimum Output VCOMP1(MIN) VIFB1 = 2.0 V 4–9
− 0 0.2 V
Voltage VCOMP2(MIN) VIFB2 = 2.0 V 15 – 9
Transconductance gm − − 640 − µS
ICOMP1(SRC) VIFB1 = 0.7 V 4 – 9
COMP Pin Source Current VIFB2 = 0.7 V 15 – 9
−77 −57 −37 µA
ICOMP2(SRC)
ICOMP1(SNK) VIFB1 = 1.5 V 4 – 9
COMP Pin Sink Current VIFB2 = 1.5 V 15 – 9
37 57 77 µA
ICOMP2(SNK)
COMP Pin Charge Current at ICOMP1(S) VCOMP1 = 0 V 4 – 9
VCOMP2 = 0 V 15 – 9
−19 −11 −3 µA
Startup ICOMP2(S)
ICOMP1(R) 4–9
COMP Pin Reset Current 200 360 520 µA
ICOMP2(R) 15 – 9
EN Pin
Operation Start EN Pin Voltage VEN(ON) 17 – 9 1.2 2.0 2.6 V
BL0202B
Operation Stop EN Pin Voltage VEN(OFF) 17 – 9 0.8 1.4 1.8 V BL0202C
EN Pin Sink Current IEN VEN = 3 V 17 – 9 20 55 120 µA
ER Pin
ER Pin Sink Current during
IER VER = 1 V 17 – 9 2.5 4.4 6.3 mA BL0200C
Non-Alarm
Boost Parts Overcurrent Protection (OCP)
VCOMP1
OC Pin Overcurrent Protection VOCP1 6–9
= VCOMP2 0.57 0.60 0.63 V
Threshold Voltage VOCP2 = 4.5 V 13 – 9
Overvoltage Protection (OVP)
OVP Pin Overvoltage
VOVP 2–9 2.85 3.00 3.15 V
Protection Threshold Voltage
OVP Pin OVP Release
VOVP(OFF) 2–9 2.60 2.75 2.90 V
Threshold Voltage
PWM Pin
PWM Pin ON Threshold VPWM1(ON) 3–9
1.4 1.5 1.6 V
Voltage VPWM2(ON) 16 – 9
PWM Pin OFF Threshold VPWM1(OFF) 3–9
0.9 1.0 1.1 V
Voltage VPWM2(OFF) 16 – 9
RPWM1 3–9
PWM Pin Impedance 100 200 300 kΩ
RPWM2 16 – 9
SW / DRV Pin
ISW1(SRC) 8–9
SW Pin Source Current − −85 − mA
ISW2(SRC) 11 – 9
ISW1(SNK) 8–9
SW Pin Sink Current − 220 − mA
ISW2(SNK) 11 – 9
IDRV1(SRC) 7–9
DRV Pin Source Current − −0.36 − A
IDRV2(SRC) 12 – 9
IDRV1(SNK) 7–9
DRV Pin Sink Current − 0.85 − A
IDRV2(SNK) 12 – 9
Thermal Shutdown Protection (TSD)
Thermal Shutdown Activating
Tj(TSD) − 125 − − °C
Temperature
Hysteresis Temperature of TSD Tj(TSD)HYS − − 65 − °C
Thermal Resistance
Thermal Resistance from
θj-A − − − 95 °C/W
Junction to Ambient

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3. Functional Block Diagram

BL0202B, BL0202C

VCC 10 1 REG

VCC UVLO VCC

EN 17 REG ON/OFF
Drive 8 SW1
PWM1 Pulse TSD
PWM1 3
Detector
VCC

PWM2 Pulse
PWM2 16
Detector
Drive 11 SW2
PWM OSC
Main Logic
VCC
Overvoltage
OVP 2
Detector 7
Drive DRV1

VREF 18 VCC
Abnormal
Detector Auto Restart Drive 12 DRV2
Protection

IFB1 Feedback1 OC1 Control

6 OC1
5 Control
Slope
Compensation
Feedback2
IFB2 OC2 Control
14 Control 13 OC2
15 4 9
COMP2 COMP1 GND BD_BL202_R1

BL0200C

VCC 10 1 REG
VCC
VCC UVLO
REG ON/OFF
Drive 8 SW1
PWM1 Pulse TSD
PWM1 3
Detector VCC

PWM2 Pulse
Drive 11 SW2
PWM2 16
Detector
PWM OSC
Main Logic VCC

Overvoltage Drive 7 DRV1

OVP 2
Detector

VCC
VREF 18
Abnormal Drive 12 DRV2
Detector Auto Restart
Protection
17 ER
IFB1 Feedback1 OC1 Control
6 OC1
5 Control
Slope
Compensation
Feedback2
IFB2 OC2 Control
14 Control 13 OC2
15 4 9
COMP2 COMP1 GND BD_BL200_R1

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4. Pin List Table

Number Name Function
REG 1 18 VREF 1 REG Internal regulator output
OVP 2 17 EN / ER 2 OVP Overvoltage detection signal input

PWM1 3 16 PWM2
3 PWM1 PWM dimming signal input (1)
4 COMP1 Phase compensation and soft-start setting (1)
COMP1 4 15 COMP2
Feedback signal input of current detection
IFB1 5 14 IFB2 5 IFB1
(1)
OC1 6 13 OC2 Current mode control signal input (1) and
6 OC1
overcurrent protection signal input (1)
DRV1 7 12 DRV2
7 DRV1 Boost MOSFET gate drive output (1)
SW1 8 11 SW2
8 SW1 Dimming MOSFET gate drive output (1)
GND 9 10 VCC 9 GND Ground
10 VCC Power supply voltage input
11 SW2 Dimming MOSFET gate drive output (2)
12 DRV2 Boost MOSFET gate drive output (2)
Current mode control signal input (2) and
13 OC2
overcurrent protection signal input (2)
Feedback signal input of current detection
14 IFB2
(2)
15 COMP2 Phase compensation and soft-start setting (2)
16 PWM2 PWM dimming signal input (2)
EN Enable signal input (BL0202B, BL0202C)
17
ER Error signal output (BL0200C)
18 VREF Detection voltage setting

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5. Typical Application Circuit

LED_OUT2(+)

F1 D9 LED_OUT2(-)
P_IN
L2 D6

LED_OUT1(+)
R50 L1 D1
Q4 D8 LED_OUT1(-)
C21 C18
R22
D10 Q2
R45
Q3 R49 R63 R1
C1 C2
D3
R61 R17
D7 Q1 R2
R21
R44 R47 R48 R15
D2 R3 R24
R16 R19
R20
R4
P_GND

C8
R46 R62
R18
10 U1 9
VCC GND
11 8
SW2 SW1
12 7
DRV2 DRV1

BL0202
13 6 OC1
OC2 R23
14 5
IFB2 IFB1
15 4
COMP2 COMP1 R27
R38
PWM2_IN 16 3
PWM2 PWM1
ON/OFF 17 2
EN OVP
R39
VCC_IN 18 1
VREF REG
C12
C4
R42
R41 C20 R37
C7
R34 R35
R32
R36 C11 C19 C22 C13 C14 C10 C15 C16 C3 C5 C6 R26
R33
S_GND
R25
PWM1_IN
TC_BL0202_2_R1

Figure 5-1 BL0202B and BL0202C Typical Application Circuit

LED_OUT2(+)

F1 D9 LED_OUT2(-)
P_IN
L2 D6

LED_OUT1(+)
R50 L1 D1
Q4 D8 LED_OUT1(-)
C21 C18
R22
D10 Q2
R45
Q3 R49 R63 R1
C1 C2
D3
R61 R17
D7 Q1 R2
R21
R44 R47 R48 R15
D2 R3 R24
R16 R19
R20
R4
P_GND

C8
R46 R62
R18
10 U1 9
VCC GND
11 8
SW2 SW1
12 7
BL0200C

DRV2 DRV1
13 6 OC1
OC2 R23
14 5
IFB2 IFB1
15 4
COMP2 COMP1 R27
R38
PWM2_IN 16 3
R39 PWM2 PWM1
ER_OUT 17 2
ER OVP
18 1
Q5 VREF REG
VCC_IN C12
R37

R28 R29 R40

C4
R42
R31 R41 C20
ON/OFF Q6 C7
R34 R35
R32
C9 R30 R36 C11 C19 C22 C13 C14 C10 C15 C16 C3 C5 C6 R26
R33
S_GND
R25
PWM1_IN
TC_BL0202_2_R1

Figure 5-2 BL0200C Typical Application Circuit

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6. Package Diagram
 SOP18

NOTES：
1) Dimension is in millimeters
2) Pb-free. Device composition compliant with the RoHS directive

7. Marking Diagram

18
B L 0 2 0 × ×
Part Number
S K Y M D
Lot Number
Y is the last digit of the year (0 to 9)
1
M is the month (1 to 9, O, N or D)
D is a period of days (1 to 3) :
1 : 1st to 10th
2 : 11th to 20th
3 : 21st to 31st
Sanken Control Number

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8. Functional Description ICC

ICC（ON）
 All of the parameter values used in these descriptions
are typical values, unless they are specified as
minimum or maximum.

Start
Stop
 With regard to current direction, "+" indicates sink
current (toward the IC) and "–" indicates source
current (from the IC).
 The IC incorporates two boost converter circuits in one VCC
package, and can independently control each output VCC（OFF） VCC（ON）
current.
 The operation of control circuit for LED_OUT1 is
Figure 8-2 VCC versus ICC
same operation as the control circuit for LED_OUT2.
When the one of output is not used, the control signal
input pin (PWM, IFB and OC pin) of unused output When the on-duty of the PWM dimming signal is
should be connected to GND pin. small, the charge current at the COMP pin is controlled
as follows in order to raise the output current quickly at
startup.
8.1 Startup Operation（BL0200C） Figure 8-3 shows the operation waveform with the
PWM dimming signal at startup.
Figure 8-1 shows the VCC pin peripheral circuit. The
VCC pin is the power supply input for control circuit VCC pin voltage
from the external power supply. VCC(ON)
When the VCC pin voltage increases to the Operation 0
Start Voltage, VCC(ON) = 9.6 V, the control circuit starts Constant current control
operation. After that, when the PWM pin voltage exceeds IFB pin voltage VREF pin voltage
VIFB(COMP.VR)
the PWM Pin ON Threshold Voltage, VPWM(ON) of 1.5 V
(less than absolute maximum voltage of 5 V), the COMP 0
Pin Charge Current at Startup, ICOMP(S) = −11 µA, flows PWM pin
from the COMP pin. This charge current flows to Dimming signal
capacitors at the COMP pin. When the COMP pin
0
voltage increases to the COMP Pin Voltage at Oscillation
COMP pin
Start, VCOMP(ON) = 0.50 V or more, the control circuit charge current
starts switching operation. 0
As shown in Figure 8-2, when the VCC pin voltage ICOMP(S)
decreases to the Operation Stop Voltage, VCC(OFF) = 9.1 V, ICOMP(SRC)
the control circuit stops operation, by the UVLO
(Undervoltage Lockout) circuit, and reverts to the state COMP pin
before startup. voltage
VCOMP(ON)
0
External power supply
IC switching
status OFF ON
3
10 PWM1
VCC U1
Figure 8-3 Startup operation during PWM dimming
COMP1 GND
4 9
C7 C8 While the IFB pin voltage increases to the IFB Pin
R42 Voltage at COMP Charge Switching, VIFB(COMP.VR), a
C16
capacitors at the COMP pin are charged by ICOMP(S) = −11
C15 µA. During this period, they are charged by the COMP
Pin Source Current, ICOMP(SRC) = −57 µA, when the PWM
pin voltage is 1.5 V or more. Thus, the COMP pin
Figure 8-1 VCC pin peripheral circuit voltage increases immediately. When the IFB pin voltage
increases to VIFB(CMP1.VR) or more, the COMP pin source
current is controlled according to the feedback amount,
and the output current is controlled to be constant. The
on-duty gradually becomes wide according to the

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increase of the COMP pin voltage, and the output power VCC pin voltage decreases to the Operation Stop
increases (Soft start operation). Thus, power stresses on Voltage, VCC(OFF) = 8.6 V, the control circuit stops
components are reduced. operation, by the UVLO (Undervoltage Lockout) circuit,
When the VCC pin voltage decreases to the operation and reverts to the state before startup.
stop voltage or less, or the Auto Restart operation (see The value of R39 connected to EN pin is set as
the Section 8.7 Protection Function) after protection is follows;
achieved, then the control circuit stops switching
operation, and capacitors at the COMP pin are VEN _ IN  VEN( ON ) (max)
discharged by the COMP Pin Reset Current, R 39  　
ICOMP(R) = 360 µA simultaneously. The soft start I EN (max)
operation is achieved at restart.
The IC is operated by Auto Restart 1 at startup VEN _ IN  2.6(V)
 　 (8-1)
operation. See the Section 8.7 Protection Function about 120(A)
the caution of startup operation.
VIFB(COMP.VR) is determined by the VREF pin voltage,
as shown in Figure 8-4. When VREF pin voltage is 1V, Where,
the value of VIFB(COMP.VR) becomes 0.60 V. VEN_IN is EN pin input voltage (less than absolute value
of EN pin voltage, 5 V ). VEN(ON)(max) is the maximum
rating of EN Pin Operation Start Voltage. IEN(max) is
VIFB(COMP.VR) the maximum rating of EN Pin Sink Current.

1.2V In case VEN_IN = 3.5V, the value of R39 should be set

7.5 kΩ or less.

0.6V External power supply 8

VCC BL0202B/C
3
PWM1
0.15V ON/OFF 5
EN
0.25V 1V 2V R39
COMP1 GND
VREF pin voltage C8 4 9

C22
VEN_IN R42
Figure 8-4 VREF pin voltage versus IFB pin voltage at C7
COMP charge switching C16
C15

8.2 Startup Operation（BL0202B, BL0202C） Figure 8-5 The peripheral circuit of VCC pin and EN pin

BL0202B and BL0202C have Enable Function. Figure

8-5 shows the peripheral circuit of VCC pin and EN pin, VCC pin voltage
Figure 8-6 shows the operational waveforms. VCC(ON) VCC(OFF)
The VCC pin is the power supply input for control 0
circuit from the external power supply. The EN pin is
EN pin voltage
ON/OFF signal input from the external circuit.
When the both VCC pin voltage, VCC, and EN pin VEN(ON)
VEN(OFF)
voltage, VEN, increase to the each operation voltage or 0
more, the control circuit starts operation (VCC ≥ REG pin voltage
VCC(ON) = 9.6 V and VEN ≥ VEN(ON) = 2.0 V).
0
After that, when the PWM pin voltage exceeds the
PWM Pin ON Threshold Voltage, VPWM(ON) of 1.5 V COMP pin voltage
(less than absolute maximum voltage of 5 V), the COMP VCOMP(ON)
Pin Charge Current at Startup, ICOMP(S) = −11 µA, flows VCOMP(OFF)
0
from the COMP pin. This charge current flows to
capacitors at the COMP pin. When the COMP pin IC switching status
voltage increases to the COMP Pin Voltage at Oscillation OFF ON OFF ON OFF
Start, VCOMP(ON) = 0.50 V or more, the control circuit
starts switching operation.
As shown in Figure 8-2, when the EN pin voltage Figure 8-6 Operational waveforms
decreases to the Operation Stop Voltage VEN(OFF) = 1.4 V
or less, the control circuit stops operation. And when the

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When the on-duty of the PWM dimming signal is capacitors at the COMP pin are discharged by the COMP
small, the charge current at the COMP pin is Pin Reset Current, ICOMP(R) = 360 µA. Because the
controlled as follows in order to raise the output on-duty gradually becomes wide after cycling power to
current quickly at startup. the IC, the soft start operation is achieved at restart.
Figure 8-7 shows the operation waveform with the The IC is operated by Auto Restart 1 at startup
PWM dimming signal at startup. operation. See the Section 8.7 Protection Function about
the caution of startup operation.
VIFB(COMP.VR) is determined by the VREF pin voltage as
VCC pin voltage shown in Figure 8-4.
VCC(ON)
0
EN pin voltage 8.3 Constant Current Control Operation
VEN(ON)
Figure 8-8 shows the IFB pin peripheral circuit.
0
When the dimming MOSFET (Q2, Q4) turns on, the
Constant current control
IFB pin voltage LED output current, IOUT(CC), is detected by the current
VREF pin voltage
VIFB1(COMP.VR) detection resistor, R15 and R61. The IC compares the
0
IFB pin voltage with the VREF pin voltage by the
internal error amplifier, and controls the IFB pin voltage
PWM pin so that it gets close to the VREF pin voltage.
Dimming signal The reference voltage at the VREF pin is the divided
voltage of the REG pin voltage, VREG = 5 V, by R32 to
0
R35, and thus this voltage can be externally adjusted.
COMP pin
charge current
The setting current, IOUT(CC), of the LED_OUT can be
0 calculated as follows.
ICOMP(S)
ICOMP(SRC) VREF
I OUT ( CC)  (8-2)
R SEN
COMP pin
voltage
VCOMP(ON) Where:
0 VREF is the VREF pin voltage. The value is
IC switching recommended to be 0.5 V to 2.0 V.
status OFF ON RESN is the value of output current detection resistor

Figure 8-7 Startup operation during PWM dimming 10 U1

VCC
REG 1 5V
LED_OUT1(+)
While the IFB pin voltage increases to the IFB Pin R34
Voltage at COMP Charge Switching, VIFB(COMP.VR), a
IOUT(CC)
capacitors at the COMP pin are charged by ICOMP(S) = −11 R35
µA. During this period, they are charged by the COMP Error Amp. VREF 18
Pin Source Current, ICOMP(SRC) = −57 µA, when the PWM LED_OUT1(-)
R32
pin voltage is 1.5 V or more. Thus, the COMP pin
voltage increases immediately. R33 Q2
When the IFB pin voltage increases to VIFB(COMP.VR) or
more, the COMP pin source current is controlled IFB1 5
Abnormal
according to the feedback amount, and the output current Detector
R15
is controlled constant. Output current
The on-duty gradually becomes wide according to the detection resistor
increase of the COMP pin voltage, and the output power
increases (Soft start operation). Thus, power stresses on Figure 8-8 IFB pin peripheral circuit
components are reduced.
When the VCC pin voltage or EN pin voltage
decreases to the operation stop voltage or less, or the
Auto Restart operation (see the Section 8.7 Protection
Function) after protection is achieved, then the control
circuit stops switching operation, and simultaneously

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8.4 PWM Dimming Function

8.5 Gate Drive
Figure 8-9 shows the peripheral circuit of PWM pin
and SW pin. Figure 8-11 shows the peripheral circuit of DRV pin
The PWM pin is used for the PWM dimming signal and SW pin and FSET pin. The DRV pin is for boost
input. The SW pin drives the gate of external dimming MOSFET, Q1 and Q3. The SW pin is for dimming
MOSFET (Q2, Q4). The SW pin voltage is turned on / MOSFET, Q2 and Q4. Table 8-1 shows drive voltages
off by PWM signal and thus the dimming of LED is and currents of DRV pin and SW pin.
controlled by PWM signal input. ● Power MOSFET should be selected so that these
As shown in Figure 8-10, when the PWM pin voltage VGS(th) threshold voltages are less than VCC enough
becomes the PWM Pin ON Threshold Voltage, over entire operating temperature range.
VPWM(ON) = 1.5 V or more, the SW pin voltage becomes
VCC. When the PWM pin voltage becomes the PWM Pin ● Peripheral components of Power MOSFET, gate
OFF Threshold Voltage, VPWM(OFF) = 1.0 V or less, the resistors and diode, affect losses of power MOSFET,
SW pin voltage becomes 0.1 V or less. The PWM pin has gate waveform (ringing caused by the printed circuit
the absolute maximum voltage of −0.3 V to 5 V, and the board trace layout), EMI noise, and so forth, these
input impedance, RPWM, of 200 kΩ. values should be adjusted based on actual operation in
The PWM dimming signal should meet these the application.
specifications and threshold voltages of VPWM(ON) and
VPWM(OFF). ● The resistors between gate and source (R19, R24, R47
and R63) are used to prevent malfunctions due to steep
dv/dt at turn-off of the power MOSFET, and these
LED_OUT1(+)
3 PWM1 U1 resistors are connected near each the gate of the power
MOSFETs and the ground line side of the current
PWM_IN
PWM Pulse
LED detection resistance. The reference value of them is
Detector from 10 kΩ to 100 kΩ.
VCC
LED_OUT1(−)
PWM OSC SW1 8
Drive Q2
Main Logic Table 8-1 Drive voltage and current
R15
Drive voltage, VDRV Drive current, IDRV
Pins
High Low Source Sink
Figure 8-9 The peripheral circuit of PWM pin DRV VCC ≤ 0.1 V −0.36 A 0.85 A
and SW pin.
SW VCC ≤ 0.1 V −85 mA 220 mA

PWM pin voltage

VPWM(ON) D1 LED_OUT1(+)
L1
VPWM(OFF) C1 C2
Q1
R17
０ R22
Time Q2
SW pin voltaege R16 D2
R20 D3
R21 R24 R15
VCC 7
R19
≤ 0.1V U1 VCC
DRV1
Drive
０ VCC
PWM OSC
Time Main Logoc SW1 8
Drive

GND 9
Figure 8-10 The waveform of PWM pin and SW pin

Figure 8-11 The peripheral circuit of DRV pin,

SW pin and FSET pin

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BL0200 Series

8.6 Error Signal Output Function (BL0200C) Auto Restart 1:

As shown in Figure 8-13, the IC repeats an intermitted
When an external circuit such as microcomputer uses oscillation operation, after the detection of any one of
the error signal output, configure the peripheral circuit of abnormal states 1 to 5 in Table 8-2. This intermitted
ER pin using the pull-up resistor, R40 and the protection oscillation is determined by tARS1 or tARS2, and tAROFF1.
resistor of ER pin, R39, as shown in Figure 8-12. The tARS1 is an oscillation time in the first intermitted
The ER pin is connected to internal switch. When the oscillation cycle, TAR1. The tARS2 is an oscillation time in
protection function is active, the internal switch becomes the second and subsequent intermitted oscillation cycle,
OFF and ER_OUT becomes REG pin voltage from 0 V. TAR2. The tAROFF1 is a non-oscillation time in all
The resistances of R39 and R40 are about 10 kΩ. intermitted oscillation cycle.
In case PWM dimming frequency is low and the
on-duty is small, the startup operation, the restart
REG
1 operation from on-duty = 0 % and the restart operation
R40 from intermitted oscillation operation need a long time.
ER Thus the value of tARS1 and tARS2 depend on frequency
ER_OUT and on-duty of the PWM dimming signal, as shown in
Auto restart 17 R39
protection Figure 8-15 and Figure 8-16 for BL020×C, Figure 8-17
GND and Figure 8-18 for BL0202B.
7 C12
Table 8-3 shows the Auto Restart 1 oscillation time,
tARS1, tARS2, and the Auto Restart 1 non-oscillation time,
tAROFF1, at on-duty = 100 %.
Figure 8-12 ER pin peripheral circuit

Table 8-3 Oscillation time and non-oscillation time

8.7 Protection Function (at on-duty = 100 %)

As shown in Table 8-2, the IC performs protection Oscillation Oscillation non-oscillation

operations according to kind of abnormal state. In all time, tARS1 time, tARS2 time, tAROFF1
protection functions, when the fault condition is removed, BL0200C
31 ms 20.5 ms About 635 ms
the IC returns to normal operation automatically. The BL0202C
intermitted oscillation operation reduces stress on the BL0202B 61.4 ms 41.0 ms About 1.3 s
power MOSFET, the secondary rectifier diode, and so
forth.
Auto Restart 2:
As shown in Figure 8-14, the IC stops the switching
Table 8-2 Relationship between a kind of abnormal state operation immediately after the detection of abnormal
and protection operations states 6 or 7 in Table 8-2, and repeats an intermitted
Protection oscillation operation. In the intermitted oscillation cycle,
Abnormal States the tARSW is an oscillation time, the tAROFF1 is a
Operations
non-oscillation time.
1 Overcurrent of boost circuit (OCP) The value of tARSW is a few microseconds. The value
Overcurrent of LED output of tARS2 is derived from Figure 8-18, and tAROFF2 is
2 calculated as follows:
(LED_OCP)
Overvoltage of LED_OUT(+) Auto
3
(OVP) Restart 1
Short mode between t AROFF 2  t ARS 2  t ARSW  t AROFF 1 (8-3)
4
LED_OUT(−) and GND
Short mode of LED current
5 In case the on-duty is 100%, the value of tAROFF2
detection resistor (RSEN_Short)
Short mode of both ends of LED becomes as follows:
6
output Auto
Open mode of LED current Restart 2 L0200C、BL0202C：
7
detection resistor (RSEN_Open) tAROFF2 ≒ 20.5 + 635 = 655.5 (ms)
Overtemperature of junction of IC Auto
8 BL0202B：
(TSD) Restart 3
tAROFF2 ≒ 0.041 + 1.3 = 1.341 (s)

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Auto Restart 3: fDM : PWM dimming frequency

The IC stops the switching operation immediately after 2500
the detection of abnormal states 8 in Table 8-2, and keeps fDM = 100 Hz
a non-oscillation. 2000 fDM = 300 Hz

tARS1 (ms)
1500
Release
Abnormal 1000
state
500
Return to
tARS1 tARS2 tARS2
normal
SW pin operation 0
voltage 0.01 0.1 1 10 100
Duty (%)
０
tAROFF1 tAROFF1 tAROFF1 Time Figure 8-15 PWM dimming on-duty vs. tARS1 (BL020×C)
TAR1 TAR2 TAR2
fDM : PWM dimming frequency
1400
1200 fDM = 100 Hz
Figure 8-13 Auto Restart 1 fDM = 300 Hz
1000

tARS1 (ms) 800

Release 600
Abnormal
400
state
Return to 200
normal
SW pin tARSW tARSW operation 0
voltage 0.01 0.1 1 10 100
tAROFF2 tAROFF2 tAROFF2 Duty (%)
０
Time Figure 8-16 PWM dimming on-duty vs. tARS2 (BL020×C)
tARS2 tARS2
tAROFF1 tAROFF1 tAROFF1 fDM : PWM dimming frequency
2500
fDM = 100 Hz
Figure 8-14 Auto Restart 2 2000 fDM = 300 Hz
tARS1 (ms)

1500

1000

500

0
0.01 0.1 1 10 100
Duty (%)
Figure 8-17 PWM dimming on-duty vs. tARS1 (BL0202B)

fDM : PWM dimming frequency

1400
1200 fDM = 100 Hz
fDM = 300 Hz
1000
800
tARS2 (ms)

600
400
200
0
0.01 0.1 1 10 100
Duty (%)

Figure 8-18 PWM dimming on-duty vs. tARS2 (BL0202B)

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The operating condition of Auto Restart 1 and 2 is as 1) In case IFB pin voltage increased
follows: When the FB pin voltage increase to VIFB(OCL.VR) in
Figure 8-20, or more, the operation of the IC switches
< The operating condition of Auto Restart 1 > to Auto Restart 1. When the fault condition is
The Auto Restart 1 is operated by the detection signals removed and the IFB pin voltage decreases to
of the OC pin or IFB pin. VIFB(OCL-OFF.VR) in Figure 8-20, or less, the IC returns
to normal operation automatically.
● Operation by the detection signal of OC pin:
When the OC pin voltage increase to the OC Pin 2) In case IFB pin voltage decreased
Overcurrent Protection Threshold Voltage, When the FB pin voltage decrease to VIFB(AR.VR) in
VOCP = 0.60 V, or more, the operation of the IC Figure 8-20, or more, the operation of the IC switches
switches to Auto Restart 1. When the fault condition is to Auto Restart 1. When the fault condition is
removed and the OC pin voltage decreases to under removed and the IFB pin voltage increases to above
VOCP, the IC returns to normal operation automatically. VIFB(COMP), the IC returns to normal operation
automatically.
● Operation by the detection signal of IFB pin:
As shown in Figure 8-19, IFB pin has two types of
threshold voltage. These threshold voltages depend on < The operating condition of Auto Restart 2 >
the VREF pin voltage, as shown in Figure 8-20. The Auto Restart 2 is operated by the detection signal
of the IFB pin.
As shown in Figure 8-21, when the FB pin voltage
IFB pin
voltage increase to the IFB Pin Overcurrent Protection High
VIFB(OCL.VR) Threshold Voltage, VIFB(OCH) = 4.0 V, or more, the
VIFB(OCL-OFF.VR) operation of the IC switches to Auto Restart 2, and the IC
stops switching operation immediately. When the fault
VIFB(AR.VR) VIFB(COMP)
condition is removed and the IFB pin voltage decreases
０ to under VIFB(OCH), the operation of the IC switches to
Time
Return to normal operation Auto Restart 1.
SW pin
voltage
IFB pin
０ voltage
Time VIFB(OCH)
Auto Restart 1 VIFB(OCL-OFF.VR)
０
Return to normal
Figure 8-19 IIFB pin threshold voltage SW pin operation
voltage
and Auto Restart 1 operation

０
VIFB(OCL.VR) : IFB Pin Overcurrent Protection Low Threshold Voltage Time
VIFB(OCL-OFF.VR) :IFB Pin Overcurrent Protection Release Threshold Voltage Auto Restart 2 Auto Restart 1
VIFB(AR.VR) :IFB Pin Auto Restart Operation Threshold Voltage
10.0

Figure 8-21 IFB pin threshold voltage

VIFB(OCL.VR)
4.0V and Auto Restart 2 operation
IFB pin threshold voltages (V)

3.2V
VIFB(OCL.VR)

VIFB(AR.VR) < Caution of startup operation >

1.0 1.0V When the LED current is low and the IFB pin voltage
is less than VIFB(AR.BR), during startup for example, the IC
0.5V is operated by Auto Restart 1. If the startup time is too
0.4V
long, the IC operation becomes the intermitted oscillation
by the Auto Restart 1. It becomes cause of the fault
startup operation, thus the startup time should be set less
0.125V
0.1 than tARS1 in Figure 8-13.
0.1 0.25V 1.0
VREF pin voltage (V)

Figure 8-20 VREF pin voltage versus

IFB pin threshold voltages

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The protection operation according to the abnormal (2) When IFB pin voltage becomes VIFB(OCL.VR) or more
states in Table 8-2 is described in detail as follows: (see Figure 8-20), the IC switches to Auto Restart 1.

(3) The LED current increases further and when the IFB
8.7.1 Overcurrent of Boost Converter Part pin voltage increases to the IFB Pin Overcurrent
(OCP) Protection High Threshold Voltage, VIFB(OCH) = 4.0 V
or more, the IC switches to Auto Restart 2.
When the OC pin detects the overcurrent of boost
circuit, the IC switches to Auto Restart 1.
Figure 8-22 shows the peripheral circuit of OC pin. LED_OUT1(+)
U1 IFB1 5
When the boost MOSFET (Q1, Q3) turns on, the current
flowing to L1 is detected by the current detection resistor Feed back1
(R20, R48), and the voltage on R4 is input to the OC pin. control

When the OC pin voltage increases to the OC Pin COMP1 4

LED_OUT1(-)
Overcurrent Protection Threshold Voltage, VOCP = 0.60
V or more, the on-duty becomes narrow by R42 C16 Q2
OC1 control
pulse-by-pulse basis, and the output power is limited.

C15 R15
L1 LED_OUT1(+) Output current
detection resistor
D1
IL(ON) LED_OUT1(-)

Q1 Q2 Figure 8-23 The peripheral circuit of IFB pin

C2 and COMP pin
R20 R18 R15

8.7.3 Overvoltage of LED_OUT (+) (OVP)

U1 6
OC1
The OVP pin detects LED_OUT (+) voltage as shown
C3
9 in Figure 8-24.
GND
When the LED_OUT (+) or the IFB pin is open and
the OVP pin voltage increases to the OVP Pin
Overvoltage Protection Threshold Voltage, VOVP = 3.00
Figure 8-22 OC pin peripheral circuit
V, the IC immediately stops switching operation. When
the OVP pin voltage decreases to the OVP Pin
Overvoltage Protection Release Threshold Voltage,
8.7.2 Overcurrent of LED Output VOVP(OFF) = 2.75 V or the IFB pin voltage decreases to
(LED_OCP) VIFB(AR.VR) in Figure 8-20, then the IC switches to Auto
Restart 1.
Figure 8-23 shows the peripheral circuit of IFB pin
and COMP pin.
When the dimming MOSFET (Q2, Q4) turns on, the LED_OUT2(+)

output current is detected by the detection resistor (R15, D6

LED_OUT1(+)
R61). When the boost operation cannot be done by C18
Q4

failure such as short circuits in LED string, the IFB pin D1 D9 D8

voltage is increased by the increase of LED current.

There are three types of operation modes in LED_OCP R61
C2 R1
state.
R2 Q2
U1
(1) When the IFB pin voltage is increased by the increase R3
R15
of LED current, COMP pin voltage is decreases. In OVP
C5
addition, when the COMP pin voltage decreases to R4
GND
the COMP Pin Voltage at Oscillation Stop,
VCOMP(OFF) = 0.25 V or less, the IC stops switching
operation, and limits the increase of the output Figure 8-24 OVP pin peripheral circuit
current.
When IFB pin voltage is decreased by the decrease of
LED current, COMP pin voltage increases. When
COMP pin voltage becomes VCOMP(ON) = 0.50 V or
more, the IC restarts switching operation.

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8.7.4 Short Mode between LED_OUT(−) 9. Design Notes

and GND
When the LED_OUT (–) and the GND are shorted,
and the IFB pin voltage decreases to VIFB(AR.VR) in Figure 9.1 Peripheral Components
8-20, then the IC switches to Auto Restart 1.
Take care to use the proper rating and proper type of
components.
8.7.5 Short Mode of LED Current Detection  Input and output electrolytic capacitors, C1, C2, C18
Resistor (RSEN_Short) and C21
▫ Apply proper design margin to accommodate ripple
When the output current detection resistor (R15, R61), current, voltage, and temperature rise.
is shorted, the IFB pin voltage decreases. When the IFB ▫ Use of high ripple current and low impedance types,
pin voltage decreases to VIFB(AR.VR) in Figure 8-20, then designed for switch-mode power supplies, is
the IC switches to Auto Restart 1. recommended, depending on their purposes.
 Inductor, L1, L2
8.7.6 Short Mode of LED Output Both Ends ▫ Apply proper design margin to temperature rise by
core loss and copper loss.
When the LED_OUT (+) and LED_OUT (–) are ▫ Apply proper design margin to core saturation.
shorted, the short current flows through the output
current detection resistor (R15, R61), while the dimming  Current detection resistors, R15, R20, R48 and R61
MOSFET (Q2, Q4) turns on. The IFB pin detects the Choose a type of low internal inductance because a
voltage rise of the detection resistor. When the IFB pin high frequency switching current flows to the current
voltage increases to the IFB Pin Overcurrent Protection detection resistor, and of properly allowable
High Threshold Voltage, VIFB(OCH) = 4.0 V or more, the dissipation.
IC switches to Auto Restart 2.

8.7.7 Open Mode of LED Current Detection 9.2 Inductor Design Parameters
Resistor (RSEN_Open) The CRM* or DCM* mode of boost converter with
PWM dimming can improve the output current rise
When the output current detection resistor (R15, R61), during PWM dimming.
is open, the IFB pin voltage increases. When the IFB pin * CRM is the critical conduction mode,
voltage increases to the IFB Pin Overcurrent Protection DCM is the discontinuous conduction mode.
High Threshold Voltage, VIFB(OCH) = 4.0 V or more, the
IC switches to Auto Restart 2.
(1) On-duty Setting
The output voltage of boost converter is more than
the input voltage. The on-duty, DON can be calculated
8.7.8 Overtemperature of junction of IC using following equation. The equality of the
(TSD) equation means the condition of CRM mode
When the temperature of the IC increases to operation and the inequality means that of DCM
Tj(TSD) = 125 °C (min) or more, the TSD is activated, and mode operation.
the IC stops switching operation. When the junction
temperature decreases by Tj(TSD) − Tj(TSD)HYS after the fault VOUT  VIN
condition is removed, the IC returns to normal operation D ON  (9-1)
VOUT
automatically.

where:
VIN is the minimum input voltage,
VOUT is the maximum forward voltage drop of LED
string.

DON is selected by the above equation applied to

CRM or DCM mode. In case fPWM = 100 kHz, the
range of DON should be 3.1 % to 90 %. In case
fPWM = 200 kHz, the range of DON should be 6 % to
90 %. (The minimum value results from the condition
of tMIN, and fPWM. The maximum value is DMAX).

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BL0200 Series

(2) Inductance value, L In addition, the ground traces affect radiated EMI noise,
The inductance value, L, for DCM or CRM mode can and wide, short traces should be taken into account.
be calculated as follow: Figure 9-2 shows the circuit design example of
BL0200C.

L
VIN  DON 2
2  I OUT  f PWM  VO UT  VIN 
(9-2) (1) Main Circuit Trace Layout
This is the main trace containing switching currents,
and thus it should be as wide trace and small loop as
where: possible.
IOUT is the maximum output current, C1 and C18 should be connected near the inductors,
fPWM is the maximum operation frequency of PWM L1and L2, in order to reduce impedance of the high
frequency current loop.
(3) Peak inductor current, ILP
(2) Control Ground Trace Layout
Since the operation of IC may be affected from the
VIN  D ON
I LP  (9-3) large current of the main trace that flows in control
L  f PWM ground trace, the control ground trace should be
connected at a single point grounding of point A with
(4) Inductor selection a dedicated trace.
The inductor should be applied the value of
inductance, L, from equation (9-2) and the DC (3) Current Detection Resistor Trace Layout
superimposition characteristics being higher than the R15, R20, R48 and R61 are current detection
peak inductor current, ILP, from equation (9-3). resistors.
The trace from the base of current detection resistor
should be connected to the pin of IC with a dedicated
trace.
9.3 PCD Trace Layout and Component
Placement (4) COMP pin Trace Layout for Compensation
Since the PCB circuit trace design and the component Component
layout significantly affects operation, EMI noise, and The components connected to COMP pin are
power dissipation, the high frequency PCB trace as shown compensation components.
in Figure 9-1 should be low impedance with small loop The trace of the compensation component should be
and wide trace. connected as close as possible to COMP pin, to
reduce the influence of noise.

D1
L1 (5) Bypass Capacitor Trace Layout on VCC , REG, and
VREF pins
C8, C12 and C10 of bypass capacitors, connected to
C1 C2 VCC, REG, and VREF pins respectively, should be
Q1
connected as close as possible to the pin of IC, to
reduce the influence of noise.
D1
L2
(6) Power MOSFET Gate Trace Layout
The resistor between gate and source, R19, R24, R47
C21 C18
Q3 and R63, should be connected near each the gate of
the power MOSFETs and the ground line side of the
current detection resistance.
Peripheral components of MOSFET, gate resistors
Figure 9-1 High-frequency current loops and diodes, should be connected as close as possible
(hatched areas) between each the gate of the power MOSFETs and
the pin of IC.

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BL0200 Series

(6) Power MOSFET Gate Trace Layout

(1) Main circuit trace Should be
Gate-Source resistor should be connected near gate of power MOSFET and ground line side of Current detection resistor.
as wide trace and small loop.
Gate resistors and diodes should be connected as close as possible between the gate of power MOSFET and the pin of IC.
LED_OUT2(+)

LED_OUT2(-)
P_IN
D9
F1 L2 D6 LED_OUT1(+)

L1 D1
Q3 D8 LED_OUT1(-)
R45 R50 Q4
C21 C18
C1 R17 R22
Q1 C2 Q2
A D7 D10 R3 R2 R1
R63
R47 R48 D2 D3
R44 R19 R24
R49 R61 R20
R16 R15
R4 R21

(2) Control ground trace layout

should be connected at a single
point grounding of point A with
a dedicated trace C8
(3) Current detection resistance R46 R62
R18
should be connected to the pin
of IC with a dedicated trace. 10 U1 9
VCC GND
11 8
SW2 SW1
12 7
DRV2 DRV1

BL0202
13 6 OC1
OC2 R23
14 5
IFB2 IFB1
15 4
COMP2 COMP1 R27
R38
PWM2_IN 16 3
PWM2 PWM1
ON/OFF 17 2
EN OVP
R39
VCC_IN 18 1
VREF REG
C12 C4
R42
R41 C20 R37
C7
R32 R34 R35

R36 C11 C19 C22 C13 C14 R33 C15 C16 C3 C5 C6 R26
C10
S_GND
R25
PWM1_IN
(4) COMP pin peripheral components should be
(5)Bypass capacitor（C8,C10,C12）should be connected as close as possible to the pin of IC.
connected as close as possible to the pin of IC.

Figure 9-2 Peripheral circuit example around the IC (BL0200C)

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BL0200 Series

10.Reference Design of Power Supply

As an example, the following show a power supply specification of BL0200C and BL0202B, circuit schematic, bill
of materials, and transformer specification.
This reference design is the example of the value of parts, and should be adjusted based on actual operation in the
application.

10.1 BL0202B
 BL0202B Features
- DRV pin oscillation frequency is 100 kHz
- Enable function
 Power Supply Specification
IC BL0202B
Input voltage DC 24 V
Maximum output power 40 W (max.)
Output voltage 50 V
Output current 400 mA × 2

 Circuit

OUT2
F1 D9
P_IN
L2 D6

OUT1
R50 L1 D1
Q4 D8
C21 C18
R22
D10 Q2
R45
Q3 R49 R63 R1
C1 C2
R51 R52 R53 R54 R55 D3
R17
D7 Q1 R2
R21
R44 R47 R48 R5 R6 R7 R8 R9
R61 D2 R3 R24
R56 R57 R58 R59 R60 R15
R16 R19
R20
R4
P_GND R10 R11 R12 R13 R14

C8
R46 R62
R18
10 9
VCC GND
11 8
SW2 SW1
12 7
BL0202B

DRV2 DRV1
13 6 OC1
OC2 R23
14 5
IFB2 IFB1
U1

15 4
COMP2 COMP1
R38 R27
PWM2_IN 16 3
PWM2 PWM1
ON/OFF 17 2
EN OVP
R39
18 1
VREF REG
C12
VCC_IN R37
C19
R41
C22 R42
C7 C11 R36 C16 C3 C4 C5 C6 R26
R34 R35
R32
C13 C14 C20
C10 R33 C15

S_GND
R25
PWM1_IN TC_BL0202_3_R1

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BL0200 Series

 Bill of Materials
Recommended Recommended
Symbol Part type Ratings(1) Symbol Part type Ratings(1)
Sanken Parts Sanken Parts
F1 Fuse 3A R4 General, chip, 2012 11 kΩ
L1 Inductor 50 μH, 3 A R5-R14 General, chip, 2012 Open
L2 Inductor 50 μH, 3 A R15 General 1.35 Ω, 1 W
D1 Fast recovery 200 V, 1.5 A EL 1Z R16 General, chip, 2012 10 Ω
D2 Schottky 30 V, 1 A SJPA-D3 R17 General, chip, 2012 100 Ω
(2)
D3 Schottky 30 V, 1 A SJPA-D3 R18 General, chip, 2012 100 Ω
D6 Fast recovery 200 V, 1.5 A EL 1Z R19 General, chip, 2012 10 kΩ
D7 Schottky 30 V, 1 A SJPA-D3 R20 General 0.22 Ω, 2 W
D8 200 V, 1 A AL01Z R21 General, chip, 2012 470 Ω
D10 Schottky 30 V, 1 A SJPA-D3 R22 General, chip, 2012 1.5 kΩ
200 V,
Q1 Power MOSFET SKP202 R23 General, chip, 2012 1.5 kΩ
45 mΩ (typ.)
100 V,
Q2 Power MOSFET R24 General, chip, 2012 10 kΩ
1 Ω (typ.)
200 V,
Q3 Power MOSFET SKP202 R25 General, chip, 2012 1 kΩ
45 mΩ (typ.)
100 V,
Q4 Power MOSFET R26 General, chip, 2012 33 kΩ
1 Ω (typ.)
C1 Electrolytic 50 V, 22 μF R27 General, chip, 2012 10 kΩ
C2 Electrolytic 100 V, 100 μF R32 General, chip, 2012 10 kΩ
(2)
C3 Ceramic, chip, 2012 100 pF R33 General, chip, 2012 0Ω
(2)
C4 Ceramic, chip, 2012 100 pF R34 General, chip, 2012 82 kΩ
(2)
C5 Ceramic, chip, 2012 10 nF R35 General, chip, 2012 560 Ω
C6 Ceramic, chip, 2012 470 pF R37 General, chip, 2012 10 kΩ
C7 Electrolytic 50 V, 100 μF R38 General, chip, 2012 1 kΩ
5 kΩ
C8 Ceramic, chip, 2012 50 V, 0.1 μF R39 General, chip, 2012
(VEN = 3.5 V)
C9 Ceramic, chip, 2012 50 V, 0.1 μF R40 General, chip, 2012 10 kΩ
(2)
C10 Ceramic, chip, 2012 0.1 μF R41 General, chip, 2012 22 kΩ
(2)
C11 Ceramic, chip, 2012 470 pF R42 General, chip, 2012 22 kΩ
C12 Ceramic, chip, 2012 0.1 μF R44 General, chip, 2012 10 Ω
(2)
C13 Ceramic, chip, 2012 0.047 μF R45 General, chip, 2012 100 Ω
(2) (2)
C14 Ceramic, chip, 2012 2200 pF R46 General, chip, 2012 100 Ω
(2)
C15 Ceramic, chip, 2012 0.047 μF R47 General, chip, 2012 10 kΩ
(2)
C16 Ceramic, chip, 2012 2200 pF R48 General 0.22 Ω, 2 W
C18 Electrolytic 100 V, 100 μF R49 General, chip, 2012 470 Ω
(2)
C19 Ceramic, chip, 2012 100 pF R50 General, chip, 2012 1.5 kΩ
(2)
C20 Ceramic, chip, 2012 100 pF R51-R60 General, chip, 2012 Open
C21 Electrolytic 50 V, 22 μF R61 General 1.35 Ω, 1 W
C22 Ceramic, chip, 2012 0.1 μF R62 General, chip, 2012 1.5 kΩ
(3)
R1 General, chip, 2012 110 kΩ R63 General, chip, 2012 10 kΩ
(3)
R2 General, chip, 2012 110 kΩ U1 IC BL0202B
(3)
R3 General, chip, 2012 0Ω
(1)
Unless otherwise specified, the voltage rating of capacitor is 50V or less, and the power rating of resistor is 1/8W or less.
(2)
It is necessary to be adjusted based on actual operation in the application.
(3)
Resistors applied high DC voltage and of high resistance are recommended to select resistors designed against
electromigration or use combinations of resistors in series for that to reduce each applied voltage, according to the
requirement of the application.

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BL0200 Series

10.2 BL0200C
 BL0200C Features
- DRV pin oscillation frequency is 200 kHz
- Error signal output
 Power Supply Specification
IC BL0200C
Input voltage DC 24 V
Maximum output power 40 W (max.)
Output voltage 50 V
Output current 400 mA × 2

 Circuit Schematic

OUT2
F1 D9
P_IN
L2 D6

OUT1
R50 L1 D1
Q4 D8
C21 C18
R22
D10 Q2
R45
Q3 R49 R63 R1
C1 C2
R51 R52 R53 R54 R55 D3
R17
D7 Q1 R2
R21
R44 R47 R48 R5 R6 R7 R8 R9
R61 D2 R3 R24
R56 R57 R58 R59 R60 R15
R16 R19
R20
R4
P_GND R10 R11 R12 R13 R14

C8
R46 R62
R18
10 9
VCC GND
11 8
SW2 SW1
12 7
BL0200C

DRV2 DRV1
13 6 OC1
OC2 R23
14 5
IFB2 IFB1
U1

15 4
COMP2 COMP1
R38 R27
PWM2_IN 16 3
PWM2 PWM1
ER_OUT 17 2
ER OVP
R39
18 1
VREF REG
Q5 C12
VCC_IN R37
C19 R40
R41
R28 R29 R42
C7 C11 R36 C16 C3 C4 C5 C6 R26
R31 R34 R35
ON/OFF Q6 R32
C13 C14 C20
C9 R30 C10 R33 C15

S_GND
R25
PWM1_IN TC_BL0200C_3_R1

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BL0200 Series

 Bill of Materials
Recommended Recommended
Symbol Part type Ratings(1) Symbol Part type Ratings(1)
Sanken Parts Sanken Parts
F1 Fuse 3A R5-R14 General, chip, 2012 Open
L1 Inductor 25 μH, 3 A R15 General 1.35 Ω, 1 W
L2 Inductor 25 μH, 3 A R16 General, chip, 2012 10 Ω
D1 Fast recovery 200 V, 1.5 A EL 1Z R17 General, chip, 2012 100 Ω
(2)
D2 Schottky 30 V, 1 A SJPA-D3 R18 General, chip, 2012 100 Ω
D3 Schottky 30 V, 1 A SJPA-D3 R19 General, chip, 2012 10 kΩ
D6 Fast recovery 200 V, 1.5 A EL 1Z R20 General 0.22 Ω, 2 W
D7 Schottky 30 V, 1 A SJPA-D3 R21 General, chip, 2012 470 Ω
D8 200 V, 1 A AL01Z R22 General, chip, 2012 1.5 kΩ
D9 200 V, 1 A AL01Z R23 General, chip, 2012 1.5 kΩ
D10 Schottky 30 V, 1 A SJPA-D3 R24 General, chip, 2012 10 kΩ
200 V,
Q1 Power MOSFET SKP202 R25 General, chip, 2012 1 kΩ
45 mΩ (typ.)
100 V,
Q2 Power MOSFET R26 General, chip, 2012 33 kΩ
1 Ω (typ.)
200 V,
Q3 Power MOSFET SKP202 R27 General, chip, 2012 10 kΩ
45 mΩ (typ.)
100 V,
Q4 Power MOSFET R28 General, chip, 2012 10 kΩ
1 Ω (typ.)
Q5 PNP Transistor −50 V, 0.1 A R29 General, chip, 2012 12 kΩ
Q6 NPN Transistor 50 V, 0.1 A R30 General, chip, 2012 10 kΩ
C1 Electrolytic 50 V, 22 μF R31 General, chip, 2012 15 kΩ
C2 Electrolytic 100 V, 47 μF R32 General, chip, 2012 10 kΩ
(2)
C3 Ceramic, chip, 2012 100 pF R33 General, chip, 2012 0Ω
(2)
C4 Ceramic, chip, 2012 100 pF R34 General, chip, 2012 82 kΩ
C5 Ceramic, chip, 2012 10 nF R35 General, chip, 2012 560 Ω
C6 Ceramic, chip, 2012 470 pF R36 General, chip, 2012 33 kΩ
C7 Electrolytic 50 V, 100 μF R37 General, chip, 2012 10 kΩ
C8 Ceramic, chip, 2012 50 V, 0.1 μF R38 General, chip, 2012 1 kΩ
C9 Ceramic, chip, 2012 50 V, 0.1 μF R39 General, chip, 2012 10 kΩ
C10 Ceramic, chip, 2012 0.1 μF R40 General, chip, 2012 10 kΩ
(2)
C11 Ceramic, chip, 2012 470 pF R41 General, chip, 2012 22 kΩ
(2)
C12 Ceramic, chip, 2012 0.1 μF R42 General, chip, 2012 22 kΩ
(2)
C13 Ceramic, chip, 2012 0.047 μF R44 General, chip, 2012 10 Ω
(2)
C14 Ceramic, chip, 2012 2200 pF R45 General, chip, 2012 100 Ω
(2) (2)
C15 Ceramic, chip, 2012 0.047 μF R46 General, chip, 2012 100 Ω
(2)
C16 Ceramic, chip, 2012 2200 pF R47 General, chip, 2012 10 kΩ
C18 Electrolytic 100 V, 47 μF R48 General 0.22 Ω, 2 W
(2)
C19 Ceramic, chip, 2012 100 pF R49 General, chip, 2012 470 Ω
(2)
C20 Ceramic, chip, 2012 100 pF R50 General, chip, 2012 1.5 kΩ
C21 Electrolytic 50 V, 22 μF R51-R60 General, chip, 2012 Open
(3)
R1 General, chip, 2012 110 kΩ R61 General 1.35 Ω, 1 W
(3)
R2 General, chip, 2012 110 kΩ R62 General, chip, 2012 1.5 kΩ
(3)
R3 General, chip, 2012 0Ω R63 General, chip, 2012 10 kΩ
R4 General, chip, 2012 11 kΩ U1 IC BL0200C
(1)
Unless otherwise specified, the voltage rating of capacitor is 50V or less, and the power rating of resistor is 1/8W or less.
(2)
It is necessary to be adjusted based on actual operation in the application.
(3)
Resistors applied high DC voltage and of high resistance are recommended to select resistors designed against
electromigration or use combinations of resistors in series for that to reduce each applied voltage, according to the
requirement of the application.

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BL0200 Series

OPERATING PRECAUTIONS
In the case that you use Sanken products or design your products by using Sanken products, the reliability largely
depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation
range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to
assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric
current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused
due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum
values must be taken into consideration. In addition, it should be noted that since power devices or IC’s including power
devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly.

Because reliability can be affected adversely by improper storage environments and handling methods, please observe
the following cautions.
Cautions for Storage
 Ensure that storage conditions comply with the standard temperature (5 to 35°C) and the standard relative humidity
(around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity.
 Avoid locations where dust or harmful gases are present and avoid direct sunlight.
 Reinspect for rust on leads and solderability of the products that have been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and other standard test periods, protect the products from power
surges from the testing device, shorts between the product pins, and wrong connections. Ensure all test parameters are
within the ratings specified by Sanken for the products.
Soldering
 When soldering the products, please be sure to minimize the working time, within the following limits:
• 260 ± 5 °C 10 ± 1 s (Flow, 2 times)
• 380 ± 10 °C 3.5 ± 0.5 s (Soldering iron, 1 time)
Electrostatic Discharge
 When handling the products, the operator must be grounded. Grounded wrist straps worn should have at least 1MΩ
of resistance from the operator to ground to prevent shock hazard, and it should be placed near the operator.
 Workbenches where the products are handled should be grounded and be provided with conductive table and floor
mats.
 When using measuring equipment such as a curve tracer, the equipment should be grounded.
 When soldering the products, the head of soldering irons or the solder bath must be grounded in order to prevent
leak voltages generated by them from being applied to the products.
 The products should always be stored and transported in Sanken shipping containers or conductive containers, or
be wrapped in aluminum foil.

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BL0200 Series

IMPORTANT NOTES
 The contents in this document are subject to changes, for improvement and other purposes, without notice.
Make sure that this is the latest revision of the document before use.
 Application and operation examples described in this document are quoted for the sole purpose of reference
for the use of the products herein and Sanken can assume no responsibility for any infringement of
industrial property rights, intellectual property rights or any other rights of Sanken or any third party which
may result from its use.
 Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or
implied, as to the products, including product merchantability, and fitness for a particular purpose and
special environment, and the information, including its accuracy, usefulness, and reliability, included in this
document.
 Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure
and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested
to take, at their own risk, preventative measures including safety design of the equipment or systems
against any possible injury, death, fires or damages to the society due to device failure or malfunction.
 Sanken products listed in this document are designed and intended for the use as components in general
purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication
equipment, measuring equipment, etc.).
When considering the use of Sanken products in the applications where higher reliability is required
(transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime
alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general
purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to
discuss, prior to the use of the products herein.
The use of Sanken products without the written consent of Sanken in the applications where extremely high
reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is
strictly prohibited.
 When using the products specified herein by either (i) combining other products or materials therewith or
(ii) physically, chemically or otherwise processing or treating the products, please duly consider all
possible risks that may result from all such uses in advance and proceed therewith at your own
responsibility.
 Anti radioactive ray design is not considered for the products listed herein.
 Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation
out of Sanken’s distribution network.
 The contents in this document must not be transcribed or copied without Sanken’s written consent.

BL0200-DS Rev.2.3 SANKEN ELECTRIC CO.,LTD. 26

May. 15, 2014