BLF188XR; BLF188XRS

Power LDMOS transistor

Rev. 5 — 12 November 2013 Product data sheet

1. Product profile

1.1 General description

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.

Table 1. Application information

Test signal f VDS PL Gp D
(MHz) (V) (W) (dB) (%)
CW 2 to 30 50 1270 29.0 75
27 50 1400 23.7 73
41 50 1200 22.0 82
60 48 1240 22.0 77
72.5 50 1350 23.1 83
81.4 50 1200 27.1 77.8
88 to 108 50 1320 22.5 85
108 50 1200 26.5 83
200 50 1288 19.3 68.3
pulsed RF 81.4 50 1200 25.8 85
81.4 50 1400 25.4 81
108 50 1400 24.0 73
DVB-T 174 to 230 50 225 23.8 29

1.2 Features and benefits

 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 600 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications
NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF188XR (SOT539A)
1 drain1
  
2 drain2
3 gate1 

4 gate2   

5 source [1]


V\P

BLF188XRS (SOT539B)
1 drain1
  
2 drain2

3 gate1

4 gate2   

5 source [1]


V\P

[1] Connected to flange.

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF188XR - flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
BLF188XRS - earless flanged balanced ceramic package; 4 leads SOT539B

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 135 V
VGS gate-source voltage 6 +11 V
Tstg storage temperature 65 +150 C
Tj junction temperature [1] - 225 C

[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator

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Product data sheet Rev. 5 — 12 November 2013 2 of 15

NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tj = 150 C [1][2] 0.10 K/W
Zth(j-c) transient thermal impedance from junction Tj = 150 C; tp = 100 s; [3] 0.03 K/W
to case  = 20 %

[1] Tj is the junction temperature.

[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.

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=WKMF
.:





 







        
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(1)  = 1 %
(2)  = 2 %
(3)  = 5 %
(4)  = 10 %
(5)  = 20 %
(6)  = 50 %
(7)  = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse
duration

6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown VGS = 0 V; ID = 5.5 mA 135 - - V
voltage
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 550 mA 1.25 1.9 2.25 V
VGSq gate-source quiescent voltage VDS = 50 V; ID = 20 mA 0.68 1.5 1.88 V

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Product data sheet Rev. 5 — 12 November 2013 3 of 15

NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

Table 6. DC characteristics …continued

Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A
IDSX drain cut-off current VGS = VGS(th) + 3.75 V; - 77 - A
VDS = 10 V
IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA
RDS(on) drain-source on-state VGS = VGS(th) + 3.75 V; - 0.08 - 
resistance ID = 19.25 A

Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 6.2 - pF
Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 582 - pF
Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 212 - pF

Table 8. RF characteristics
Test signal: pulsed RF; tp = 100 s;  = 10 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 1400 W 23.2 24.4 - dB
RLin input return loss PL = 1400 W - 21 14 dB
D drain efficiency PL = 1400 W 69 73 - %

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VGS = 0 V; f = 1 MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per
section

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Product data sheet Rev. 5 — 12 November 2013 4 of 15

NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

7. Test information

7.1 Ruggedness in class-AB operation

The BLF188XR and BLF188XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 40 mA; PL = 1400 W pulsed; f = 108 MHz.

7.2 Impedance information

GUDLQ
JDWH

=L =/

JDWH

GUDLQ
DDQ

Fig 3. Definition of transistor impedance

Table 9. Typical push-pull impedance

Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1400 W.
f Zi ZL
(MHz) () ()
108 2.94  j9.64 2.74 + j0.57

7.3 UIS avalanche energy

Table 10. Typical avalanche data per section
Tamb = 25 C; typical test data; test jig without water cooling.
IAS EAS
(A) (J)
35 4.5
40 3.4
45 2.4
50 2.0

For information see application note “AN10273”.

BLF188XR_BLF188XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.

Product data sheet Rev. 5 — 12 November 2013 5 of 15

NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

DDD

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Fig 4. Non-repetitive avalanche energy as a function of single pulse avalanche current,

typical values

7.4 Test circuit

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Printed-Circuit Board (PCB): RF 35; r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 m, gold plated.
See Table 11 for a list of components.
Fig 5. Component layout for class-AB production test circuit

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Product data sheet Rev. 5 — 12 November 2013 6 of 15

NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

Table 11. List of components

For test circuit see Figure 5.
Component Description Value Remarks
C1, C2, C6, multilayer ceramic chip capacitor 1000 pF [1]

C7, C16, C17,

C23, C24
C3 multilayer ceramic chip capacitor 47 pF [2]

C4 multilayer ceramic chip capacitor 39 pF [1]

C5 multilayer ceramic chip capacitor 200 pF [1]

C8, C9, C14, multilayer ceramic chip capacitor 4.7 F, 100 V TDK
C15 C5750X7R2A475KT
C10, C11 electrolytic capacitor 2200 F, 63 V
C12, C13 electrolytic capacitor 470 F, 63 V
C18, C19 multilayer ceramic chip capacitor 120 pF [1]

C20 multilayer ceramic chip capacitor 82 pF [1]

C21 multilayer ceramic chip capacitor 120 pF [1]

C22 multilayer ceramic chip capacitor 56 pF [1]

L1, L2, L3, L4 1.5 turn 0.8 mm copper wire D = 3.2 mm,
length = 1.6 mm
L5, L6 5.0 turn 0.8 mm copper wire D = 3.0 mm,
length = 4 mm
L7, L8 2.5 turn 0.8 mm copper wire D = 3.0 mm,
length = 2.4 mm
R1, R2 resistor 9.1  SMD 1206
T1 semi rigid coax 25 , Micro-Coax UT-090C-25
length = 160 mm
T2 semi rigid coax 25 , Micro-Coax UT-141C-25
length = 160 mm

[1] American Technical Ceramics type 800B or capacitor of same quality.

[2] American Technical Ceramics type 100B or capacitor of same quality.

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Product data sheet Rev. 5 — 12 November 2013 7 of 15

NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

7.5 Graphical data

The following figures are measured in a class-AB production test circuit.

7.5.1 1-Tone CW pulsed

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VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s; VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;
 = 20 %.  = 20 %.
(1) PL(1dB) = 61.58 dBm (1440 W)
(2) PL(3dB) = 61.98 dBm (1580 W)
Fig 6. Power gain and drain efficiency as function of Fig 7. Output power as a function of input power;
output power; typical values typical values

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Product data sheet Rev. 5 — 12 November 2013 8 of 15

NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

DDD DDD
 
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G% 

 

 




  



 

 
                 
3/: 3/:

VDS = 50 V; f = 108 MHz; tp = 100 s;  = 20 %. VDS = 50 V; f = 108 MHz; tp = 100 s;  = 20 %.
(1) IDq = 20 mA (1) IDq = 20 mA
(2) IDq = 40 mA (2) IDq = 40 mA
(3) IDq = 80 mA (3) IDq = 80 mA
(4) IDq = 160 mA (4) IDq = 160 mA
Fig 8. Power gain as a function of output power; Fig 9. Drain efficiency as a function of output power;
typical values typical values

DDD DDD
 
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IDq = 40 mA; f = 108 MHz; tp = 100 s;  = 20 %. IDq = 40 mA; f = 108 MHz; tp = 100 s;  = 20 %.
(1) VDS = 25 V (1) VDS = 25 V
(2) VDS = 30 V (2) VDS = 30 V
(3) VDS = 35 V (3) VDS = 35 V
(4) VDS = 40 V (4) VDS = 40 V
(5) VDS = 45 V (5) VDS = 45 V
(6) VDS = 50 V (6) VDS = 50 V
Fig 10. Power gain as a function of output power; Fig 11. Drain efficiency as a function of output power;
typical values typical values

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Product data sheet Rev. 5 — 12 November 2013 9 of 15

NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

8. Package outline

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Fig 12. Package outline SOT539A

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Product data sheet Rev. 5 — 12 November 2013 10 of 15

NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

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Fig 13. Package outline SOT539B

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Product data sheet Rev. 5 — 12 November 2013 11 of 15

NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

9. Handling information

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.

10. Abbreviations
Table 12. Abbreviations
Acronym Description
CW Continuous Wave
DVB-T Digital Video Broadcast - Terrestrial
ESD ElectroStatic Discharge
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MTF Median Time to Failure
SMD Surface Mounted Device
UIS Unclamped Inductive Switching
VSWR Voltage Standing-Wave Ratio

11. Revision history

Table 13. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF188XR_BLF188XRS v.5 20131112 Product data sheet - BLF188XR_BLF188XRS v.4
Modifications • Section 7.3 on page 5: section added
BLF188XR_BLF188XRS v.4 20131030 Product data sheet - BLF188XR_BLF188XRS v.3
BLF188XR_BLF188XRS v.3 20130801 Objective data sheet - BLF188XR_BLF188XRS v.2
BLF188XR_BLF188XRS v.2 20130712 Objective data sheet - BLF188XR_BLF188XRS v.1
BLF188XR_BLF188XRS v.1 20130506 Objective data sheet - -

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Product data sheet Rev. 5 — 12 November 2013 12 of 15

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Power LDMOS transistor

12. Legal information

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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

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responsibility for the content in this document if provided by an information the Absolute Maximum Ratings System of IEC 60134) will cause permanent
source outside of NXP Semiconductors. damage to the device. Limiting values are stress ratings only and (proper)
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In no event shall NXP Semiconductors be liable for any indirect, incidental,
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Characteristics sections of this document is not warranted. Constant or
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the quality and reliability of the device.
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NXP Semiconductors BLF188XR; BLF188XRS
Power LDMOS transistor

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13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

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Power LDMOS transistor

14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1 Ruggedness in class-AB operation . . . . . . . . . 5
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 5
7.3 UIS avalanche energy . . . . . . . . . . . . . . . . . . . 5
7.4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8
7.5.1 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 8
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Handling information. . . . . . . . . . . . . . . . . . . . 12
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.4 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.5 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13 Contact information. . . . . . . . . . . . . . . . . . . . . 14
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2013. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 November 2013
Document identifier: BLF188XR_BLF188XRS