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477 views2 pages

Microelectronic Circuits, 8e Sedra, Smith, Carusone, Gaudet

Uploaded by

Bob
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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EE 315 Homework 6

Due Thursday, March 24, 2022


Submit your solutions as a pdf file in Canvas.
2
1. A particular MOSFET for which Vtn = 0.4 V and kn0 (W/L) = 2 mA/V is to be operated in the
saturation region. If iD is to be 50 µA, find the required vGS and the minimum required vDS . Repeat
for iD = 200 µA.
2. A particular n-channel MOSFET is measured to have a drain current of 360 µA at vGS = vDS = 1 V
and of 160 µA at vGS = vDS = 0.8 V. What are the values of kn and Vt for this device?

3. Design the circuit below to establish a drain current of 0.1 mA and a drain voltage of +0.2 V. The
MOSFET has:
• Vt = 0.2 V
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• µn Cox = 400 µA/V
• L = 0.5 µm
• W = 4 µm
Specify the required values for RS and RD .

4. It is required to operate the transistor in the circuit below at the edge of saturation with ID = 50 µA.
If Vt = 0.4 V, find the required value of RD .

Microelectronic Circuits, 8e Sedra, Smith, Carusone, Gaudet Copyright © 2020 Oxford University Pres

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5. The PMOS transistor in the circuit below has Vt = −0.5 V, µp Cox = 100 µA/V , and L = 0.18 µm.
Find the values required for W and R in order to establish a drain current of 160 µA and a voltage
VD = 0.8 V.

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6. The NMOS transistors in the circuit below have Vt = 0.5 V, µn Cox = 200 µA/V , and L1 = L2 =
L3 = 0.5 µm. Find the required gate width for each of Q1 , Q2 , and Q3 to obtain the voltage and
current values indicated.

Circuits, 8e Sedra, Smith, Carusone, Gaudet Copyright © 2020 Oxf

oelectronic Circuits, 8e Sedra, Smith, Carusone, Gaudet Copyright © 2020 Oxford University

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