SI2308

N-Channel Enhancement Mode Field Effect Transistor

FEATURES
PRODUCT SUMMARY
● Super high dense cell design for low RDS(ON)
VDSS ID RDS(ON) (mΩ) Typ
● Rugged and reliable
65@ VGS=4.5V
● Simple drive requirement 20V 3.6A
90@ VGS=2.5V
● SOT-23 package

D
NOTE：The SI2308 is available
in a lead-free package
S

ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted）

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8 V
Drain Current-Continuousª@Tj=125℃ ID 3.6 A
b
- Pulse d IDM 12 A

Drain-source Diode Forward Currentª IS 1.25 A

Maximum Power Dissipationª PD 1.25 W
Operating Junction and Storage
Temperature Range TJ,TSTG -55 to 150 ℃

THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª Rth JA 100 ℃/W

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SI2308
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250µA 20 V

Zero Gate Voltage Drain Current IDSS VDS=16V,VGS=0V 1 µA

Gate-Body Leakage IGSS VGS=±8V,VDS=0V ±100 nA
ON CHARACTERITICS

Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250µA 0.5 0.8 1.5 V

VGS=4.5V,ID=2.8A 65 80
Drain-Source On-State Resistance RDS(ON) mΩ
VGS=2.5V,ID=2.0A 90 110
FS
Forward Transconductance VGS=5V,ID=5A 5 S

DAYNAMIC CHARACTERISTICS

Input Capacitance CISS 586 pF

COSS VDS=10V,VGS=0V
Output Capacitance 101 pF
f=1.0MHZ
Reverse Transfer Capacitance CRSS 59 pF

SWITCHING CHARACTERISISTICS

Turn-On Delay Time tD(ON) 6.5 ns

VDD=10V
Rise Time tr ID=3.6A, 32.1 ns
VGEN=4.5V
Turn-Off Delay Time tD(OFF) 58.4 ns
RL=10ohm
Fall Time tf RGEN=10ohm 48 ns

Total Gate Charge Q 6 nC

Q s VDS=10V,ID=1A
Gate-Source Charge 1.35 nC
VGS=4.5V
Gate-Drain Charge Q d 1.5 nC

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SI2308
ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage VSD VGS=0V,IS=1.25A 0.84 1.2 V

Notes
a. Surface Mounted on FR4 Board, t≦10sec
b. Pulse Test: Pulse Width≦300Us, Duty≦2%
c. Guaranteed by design, not subject to production testing.
ID, Drain Current (A)

ID,Drain Current(A)

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-source Voltage (V)

Figure 1.Output Characteristics Figure 2.Transfer Characteristics
RDS(ON), On-Resistance(mΩ)

VGS=4V

ID=3A
C,Capacitance(pF)

VGS, Drain-to Source Voltage

Figure3.Capacitance Figure4. On-Resistance Variation with
Temperature

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SI2308

1.3
Gate-Source Threshold Voltage

1.15

Drains-Source Breakdown
1.2 VDS=VGS

BVDSS, Normalized
1.10 ID=250uA
Vth, Normalized

1.1 ID=250uA
1.05
1.0
1.00
0.9
0.95
0.8
0.90
0.7
0.85
0.6
--50 -25 0 25 50 75 100 125 --50 -25 0 25 50 75 100 125

Tj,. Junction Temperature(℃) Tj, .Junction Temperature (℃)

Figure5.Gate Threshold Variation Figure6.Breakdown Voltage Variation
With Temperature With Temperature

21 20
FS,Transconductance(S)

18 10
Is,Source-drian current(A)

15

12

3 1
VGS=5V Tj=25℃
0 0
0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6

VSD, Body Diode Forward Voltage

IDS, Drain-Source Current (A)
Figure8.Body Diode Forward Voltage
Figure7.Transconductance Variation
Variation with Source Current
With Drain Current
50
5
10
VGS,Gate to Source Voltage

VDS=10V
4
ID,Drain Current(A)

ID=3A
1
3

0.1

0.03
0
0 2 4 6 8 10 12 14 0.1 1 10 20 50

Q , Total Gate Charge(nC) VDS, Drain-Source Voltage(V)

Figure9. Gate Charge Figure10.Maximum Safe Operating Area