Scribd
Upload
147 views2 pages

Vlsi Technology Kec 053 1

This document contains the questions and sections for a B.Tech VLSI Technology exam. It covers topics like oxide charges, wafer polishing, photoresist, diffusion mechanisms and profiles, metallization techniques, crystal growth methods, oxidation, lithography, and CMOS fabrication steps. The exam has 7 sections with questions ranging from brief answers to longer explanations. Students must attempt all brief questions and select questions to answer in detail from the provided sections.

Uploaded by

Anonymous eWMnRr70q
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
147 views2 pages

Vlsi Technology Kec 053 1

This document contains the questions and sections for a B.Tech VLSI Technology exam. It covers topics like oxide charges, wafer polishing, photoresist, diffusion mechanisms and profiles, metallization techniques, crystal growth methods, oxidation, lithography, and CMOS fabrication steps. The exam has 7 sections with questions ranging from brief answers to longer explanations. Students must attempt all brief questions and select questions to answer in detail from the provided sections.

Uploaded by

Anonymous eWMnRr70q
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

Printed Page: 1 of 2 

Subject Code: KEC053


0Roll No: 0 0 0 0 0 0 0 0 0 0 0 0 0
 
B. TECH
(SEM-V) THEORY EXAMINATION 2021-22
VLSI TECHNOLOGY
Time: 3 Hours Total Marks: 100
Note: 1. Attempt all Sections. If require any missing data; then choose suitably.
SECTION A
1. Attempt all questions in brief. 2 x 10 = 20
a. Discuss oxide charges.
b. What is electronic grade silicon.
c. Explain the purpose of oxidation.
d. How is wafer polishing done?
e. What are positive and negative photoresist?
f. What are the disadvantages of Electron Beam Lithography?
g. What are the basic mechanisms of diffusion?
h. State Fick’s second law of diffusion.
i. Why is metallization done?

1
90

13
j. What is the disadvantage of Sputtering?
_2

2.
1P

24
SECTION B
2O

5.
2. Attempt any three of the following: 10 x 3 = 30

.5
P2

a. Explain Czocharlasky method of single crystal generation in detail.


17
Q

b. Explain Plasma Oxidation technique for the growth of oxide layer.


|1

c. Explain Chemical Vapor Deposition process.


00

d. Demonstrate various diffusion profiles of dopant atom with appropriate


2:
:0

equations and curves and compare them.


09

e. What are the disadvantages of using Aluminum for metallization? How are
2

they rectified?
02

SECTION C
-2

3. Attempt any one part of the following: 10 x 1 = 10


n
Ja

(a)Explain Float-Zone method of single crystal generation.


1-
|1

(b)Demonstrate RCA cleaning with analysis of all steps and chemicals.

4. Attempt any one part of the following: 10 x 1 = 10


(a)Explain Molecular Beam Epitaxy process in detail. Also write the advantages
and disadvantages of this method.
(b)Explain Deal-Grove’s model for oxidation kinetics.

QP22O1P_290 | 11-Jan-2022 09:02:00 | 117.55.242.131


Printed Page: 2 of 2 
Subject Code: KEC053
0Roll No: 0 0 0 0 0 0 0 0 0 0 0 0 0
 

5. Attempt any one part of the following: 10 x 1 = 10


(a)Explain the process of Electron Beam Lithography.Write down figures of merit
of Lithographic process.
(b)Explain the process of polysilicon film deposition.

6. Attempt any one part of the following: 10 x 1 = 10


(a)Determine total doping concentration, junction depth and doping profile in
case of infinite source of diffusion.

(b)Explain Ion-Implantation process, its advantages and disadvantages.

7. Attempt any one part of the following: 10 x 1 = 10


(a)Explain CMOS fabrication steps in detail.
(b) Briefly explain Vacuum Deposition and Sputtering for metallization.

1
90

13
_2

2.
1P

24
2O

5.
.5
P2

17
Q

|1
00
2:
:0
09
2
02
n -2
Ja
1-
|1

QP22O1P_290 | 11-Jan-2022 09:02:00 | 117.55.242.131

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy