Btech Ec 6 Sem Integrated Circuit Technology Jun 2017
Btech Ec 6 Sem Integrated Circuit Technology Jun 2017
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Printed Pages : 1 Roll No. NEC603
B. TECH.
THEORY EXAMINATION (SEM–VI) 2016-17
INTEGRATED CIRCUIT TECHNOLOGY
Time : 3 Hours Max. Marks : 100
Note : Be precise in your answer. In case of numerical problem assume data wherever not provided.
SECTION – A
1. Attempt all of the following questions: 10 x 2 = 20
(a) What are the used of Silicon Dioxide?
(b) Differentiate among Point, Franke and Schottdy Defects.
(c) What is preoxidation cleaning?
(d) What is Epitaxy?
(e) What do you understand by Ion – implantation?
(f) Write the diffusion equation at any given distance and time.
(g) Define the total stopping power of the target.
(h) What are the four important performance of a projection printer?
(i) Write the principle of mass separation.
(j) What does ion source contain?
SECTION – B
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SECTION – C
Attempt any two of the following questions: 2 x 15 = 30
3 (a) Discuss different shaping operations involved in Preparing Wafers with diagram.
(b) Explain the principle of molecular beam epitaxy.
4 (a) Explain the concept of vacuum Deposition.
(b) Describe the various charges present in oxidation layer in detail.
5 (a) How is the silicon nitrite used? Explain its deposition variables.
(b) Explain Monolithic and Itybrid Integrated Circuits.
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