This textbook represents a first course in electronic materials and devices for undergraduate

students. With the additional topics, Principles of Electronic Materials and Devices, Fourth
Edition can also be used in a graduate-level introductory course in electronic materials for
electrical engineers and material scientists. The fourth edition is an extensively revised and
extended version of the third edition based on reviewer comments and the developments in
electronic and optoelectronic materials over the last ten years.
The fourth edition is one of the few books on the market that has a broad coverage of elec-
tronic materials that today’s scientists and engineers need. The revisions have improved the
rigor without sacrificing the original semi-quantitative approach that both the students and
instructors like.

I M P O R TA N T F E AT U R E S
• T he principles are developed with the minimum of mathematics and with the emphasis
on physical ideas. Quantum mechanics is part of the course but without its difficult
mathematical formalism.
• Robust illustration package
• T he end of each chapter includes a section called Additional Topics to further develop
important concepts, to introduce interesting applications, or to prove a theorem.

NE W TO THE FOURTH EDITION

• Over 20 new and expanded topics (see Preface for full list)
• 20% more worked examples
• Over 30% more homework problems
• New end-of-chapter problems with practical applications
This textbook represents a first course in electronic materials and devices for undergraduate
students. With the additional topics, Principles of Electronic Materials and Devices, Fourth
Edition can also be used in a graduate-level introductory course in electronic materials for
electrical engineers and material scientists. The fourth edition is an extensively revised and
extended version of the third edition based on reviewer comments and the developments in
electronic and optoelectronic materials over the last ten years.
The fourth edition is one of the few books on the market that has a broad coverage of elec-
tronic materials that today’s scientists and engineers need. The revisions have improved the
rigor without sacrificing the original semi-quantitative approach that both the students and
instructors like.

I M P O R TA N T F E AT U R E S
• T he principles are developed with the minimum of mathematics and with the emphasis
on physical ideas. Quantum mechanics is part of the course but without its difficult
mathematical formalism.
• Robust illustration package
• T he end of each chapter includes a section called Additional Topics to further develop
important concepts, to introduce interesting applications, or to prove a theorem.

NE W TO THE FOURTH EDITION

• Over 20 new and expanded topics (see Preface for full list)
• 20% more worked examples
• Over 30% more homework problems
• New end-of-chapter problems with practical applications
 PRINCIPLES OF ELECTRONIC
MATERIALS AND DEVICES

kas28183_fm_i-xiv_1.indd 1 2/28/17 9:48 PM

kas28183_fm_i-xiv_1.indd 2 2/28/17 9:48 PM
 PRINCIPLES OF ELECTRONIC
MATERIALS AND DEVICES
FOURTH EDITION

S. O. Kasap
University of Saskatchewan
Canada

kas28183_fm_i-xiv_1.indd 3 2/28/17 9:48 PM

 PRINCIPLES OF ELECTRONIC MATERIALS AND DEVICES, FOURTH EDITION

Published by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121. Copyright © 2018 by McGraw-Hill
Education. All rights reserved. Printed in the United States of America. Previous editions © 2006, 2002, 2000
(revised first edition), and 1997. No part of this publication may be reproduced or distributed in any form or by any
means, or stored in a database or retrieval system, without the prior written consent of McGraw-Hill Education,
including, but not limited to, in any network or other electronic storage or transmission, or broadcast for distance
learning.
Some ancillaries, including electronic and print components, may not be available to customers outside the
United States.
This book is printed on acid-free paper.
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ISBN 978-0-07-802818-2
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Library of Congress Cataloging-in-Publication Data
Names: Kasap, S. O. (Safa O.), author.
Title: Principles of electronic materials and devices / S. O. Kasap,
  University of Saskatchewan Canada.
Description: Fourth edition. | New York, NY : McGraw-Hill, a business unit of
  The McGraw-Hill Companies, Inc., [2018] | Includes bibliographical
  references and index.
Identifiers: LCCN 2016052438| ISBN 9780078028182 (alk. paper) | ISBN
  0078028183 (alk. paper)
Subjects: LCSH: Electrical engineering—Materials. | Electronic apparatus and
  appliances. | Electric apparatus and appliances.
Classification: LCC TK453 .K26 2018 | DDC 621.382—dc23 LC record available at
https://lccn.loc.gov/2016052438

The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website
does not indicate an endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education
does not guarantee the accuracy of the information presented at these sites.

mheducation.com/highered

kas28183_fm_i-xiv_1.indd 4 3/10/17 2:10 PM

 BRIEF CONTENTS

Chapter 1 Chapter 8
Elementary Materials Science Magnetic Properties and
Concepts 3 Superconductivity 767
Chapter 2 Chapter 9

Electrical and Thermal Conduction in Optical Properties of Materials  859

Solids: Mainly Classical Concepts  125
Appendix A
Chapter 3 Bragg’s Diffraction Law and X-ray
Elementary Quantum Physics  213 Diffraction 941
Chapter 4 Appendix B

Modern Theory of Solids  313 Major Symbols and Abbreviations  946

Appendix C
Chapter 5
Semiconductors 411 Elements to Uranium  953
Appendix D
Chapter 6
Semiconductor Devices  527 Constants and Useful Information  956

Chapter 7
Index 961
Dielectric Materials and Insulation  659 Periodic Table  978

kas28183_fm_i-xiv_1.indd 5 2/28/17 9:48 PM

 Paul Dirac (1902–1984) and Werner Heisenberg (1901–1976) walking
outdoors in Cambridge circa 1930. They received the Nobel Prize in
Physics in 1928 and 1932, respectively.
Courtesy of AIP Emilio Segre Visual Archives, Physics Today
Collection

Max Planck (1858–1947), a German theoretical physicist,

was one of the originators of quantum theory, and won
the Nobel Prize in Physics in 1918. His Nobel citation is “in
recognition of the services he rendered to the advance-
ment of Physics by his discovery of energy quanta”..
© Alpha Historica/Alamy Stock Photo

kas28183_fm_i-xiv_1.indd 6 3/10/17 2:12 PM

 CONTENTS

Preface xiii 1.10.2 Line Defects: Edge and Screw

Dislocations 73
Chapter 1 1.10.3 Planar Defects: Grain Boundaries  77
1.10.4 Crystal Surfaces and Surface
Elementary Materials Science
Properties 79
Concepts 3 1.10.5 Stoichiometry, Nonstoichiometry, and
Defect Structures  82
1.1 Atomic Structure and Atomic Number  3
1.11 Single-Crystal Czochralski Growth  82
1.2 Atomic Mass and Mole  8
1.12 Glasses and Amorphous
1.3 Bonding and Types of Solids  9
­Semiconductors  85
1.3.1 Molecules and General Bonding
1.12.1 Glasses and Amorphous Solids  85
Principles 9
1.12.2 Crystalline and Amorphous
1.3.2 Covalently Bonded Solids:
Silicon 88
Diamond 11
1.13 Solid Solutions and Two-Phase Solids  90
1.3.3 Metallic Bonding: Copper  13
1.13.1 Isomorphous Solid Solutions:
1.3.4 Ionically Bonded Solids: Salt  14
Isomorphous Alloys  90
1.3.5 Secondary Bonding  18
1.13.2 Phase Diagrams: Cu–Ni and Other
1.3.6 Mixed Bonding  22
Isomorphous Alloys  91
1.4 Kinetic Molecular Theory  25
1.13.3 Zone Refining and Pure Silicon
1.4.1 Mean Kinetic Energy and
Crystals 95
Temperature 25
1.13.4 Binary Eutectic Phase Diagrams and
1.4.2 Thermal Expansion  32
Pb–Sn Solders  97
1.5 Molecular Velocity and Energy
Additional Topics  102
­Distribution  37
1.14 Bravais Lattices  102
1.6 Molecular Collisions and Vacuum
1.15 Grüneisen’s Rule  105
Deposition 41
Defining Terms  107
1.7 Heat, Thermal Fluctuations, and
Questions and Problems  111
Noise 45
1.8 Thermally Activated Processes  50
Chapter 2
1.8.1 Arrhenius Rate Equation  50
1.8.2 Atomic Diffusion and the Diffusion Electrical and Thermal Conduction
Coefficient 52 in Solids: Mainly Classical
1.9 The Crystalline State  55 Concepts 125
1.9.1 Types of Crystals  55
1.9.2 Crystal Directions and Planes  61 2.1 Classical Theory: The Drude Model  126
1.9.3 Allotropy and Carbon  66 2.2 Temperature Dependence of Resistivity:
1.10 Crystalline Defects and Their Ideal Pure Metals  134
­Significance  69 2.3 Matthiessen’s and Nordheim’s Rules  137
1.10.1 Point Defects: Vacancies and 2.3.1 Matthiessen’s Rule and the Temperature
Impurities 69 Coefficient of Resistivity (α) 137

vii

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 viii Contents

2.3.2 Solid Solutions and Nordheim’s 3.6 Tunneling Phenomenon: Quantum

Rule 145 Leak 248
2.4 Resistivity of Mixtures and Porous 3.7 Potential Box: Three Quantum
Materials 152 Numbers 254
2.4.1 Heterogeneous Mixtures  152 3.8 Hydrogenic Atom  257
2.4.2 Two-Phase Alloy (Ag–Ni) Resistivity 3.8.1 Electron Wavefunctions  257
and Electrical Contacts  156 3.8.2 Quantized Electron Energy  262
2.5 The Hall Effect and Hall Devices  157 3.8.3 Orbital Angular Momentum and
2.6 Thermal Conduction  162 Space Quantization  266
2.6.1 Thermal Conductivity  162 3.8.4 Electron Spin and Intrinsic Angular
2.6.2 Thermal Resistance  166 Momentum S  271
2.7 Electrical Conductivity of 3.8.5 Magnetic Dipole Moment of the
Nonmetals 167 Electron 273
2.7.1 Semiconductors 168 3.8.6 Total Angular Momentum J  277
2.7.2 Ionic Crystals and Glasses  172 3.9 The Helium Atom and the Periodic
Additional Topics  177 Table 278
2.8 Skin Effect: HF Resistance of a 3.9.1 He Atom and Pauli Exclusion
Conductor 177 Principle 278
2.9 AC Conductivity σac 180 3.9.2 Hund’s Rule  281
2.10 Thin Metal Films  184 3.10 Stimulated Emission and Lasers  283
2.10.1 Conduction in Thin Metal Films  184 3.10.1 Stimulated Emission and Photon
2.10.2 Resistivity of Thin Films  184 Amplification 283
2.11 Interconnects in Microelectronics  190 3.10.2 Helium–Neon Laser  287
2.12 Electromigration and Black’s 3.10.3 Laser Output Spectrum  290
­Equation  194 Additional Topics  292
Defining Terms  196 3.11 Optical Fiber Amplifiers  292
Questions and Problems  198 Defining Terms  294
Questions and Problems  298
Chapter 3
Elementary Quantum Physics  213 Chapter 4
Modern Theory of Solids  313
3.1 PHOTONS 213
3.1.1 Light as a Wave  213 4.1 Hydrogen Molecule: Molecular Orbital
3.1.2 The Photoelectric Effect  216 Theory of Bonding  313
3.1.3 Compton Scattering  221 4.2 Band Theory of Solids  319
3.1.4 Black Body Radiation  224 4.2.1 Energy Band Formation  319
3.2 The Electron as a Wave  227 4.2.2 Properties of Electrons in a
3.2.1 De Broglie Relationship  227 Band 325
3.2.2 Time-Independent Schrödinger 4.3 Semiconductors 328
Equation 231 4.4 Electron Effective Mass  334
3.3 Infinite Potential Well: A Confined 4.5 Density of States in an Energy
Electron 235 Band 336
3.4 Heisenberg’s Uncertainty Principle  241 4.6 Statistics: Collections of Particles  343
3.5 Confined Electron in a Finite Potential 4.6.1 Boltzmann Classical Statistics  343
Energy Well  244 4.6.2 Fermi–Dirac Statistics  344

kas28183_fm_i-xiv_1.indd 8 2/28/17 9:48 PM

 Contents ix

4.7 Quantum Theory of Metals  346 5.3.3 Conductivity Temperature

4.7.1 Free Electron Model  346 Dependence 443
4.7.2 Conduction in Metals  349 5.3.4 Degenerate and Nondegenerate
4.8 Fermi Energy Significance  352 Semiconductors 445
4.8.1 Metal–Metal Contacts: Contact 5.4 Direct and Indirect Recombination  447
Potential 352 5.5 Minority Carrier Lifetime  451
4.8.2 The Seebeck Effect and the 5.6 Diffusion and Conduction Equations,
Thermocouple 355 and Random Motion  457
4.9 Thermionic Emission and Vacuum 5.7 Continuity Equation  463
Tube Devices  364 5.7.1 Time-Dependent Continuity
4.9.1 Thermionic Emission: Richardson– Equation 463
Dushman Equation  364 5.7.2 Steady-State Continuity Equation  465
4.9.2 Schottky Effect and Field 5.8 Optical Absorption  469
Emission 368 5.9 Piezoresistivity 473
4.10 Phonons  374 5.10 Schottky Junction  477
4.10.1 Harmonic Oscillator and Lattice 5.10.1 Schottky Diode  477
Waves 374 5.10.2 Schottky Junction Solar Cell and
4.10.2 Debye Heat Capacity  379 Photodiode 482
4.10.3 Thermal Conductivity of 5.11 Ohmic Contacts and Thermoelectric
Nonmetals 384 Coolers 487
4.10.4 Electrical Conductivity  387 Additional Topics  492
Additional topics  388 5.12 Seebeck Effect in Semiconductors
4.11 Band Theory of Metals: Electron and Voltage Drift  492
­Diffraction in Crystals  388 5.13 Direct and Indirect Bandgap
Defining Terms  397 Semiconductors 495
Questions and Problems  399 5.14 Indirect Recombination  505
5.15 Amorphous Semiconductors  505
Chapter 5 Defining Terms  508
Semiconductors 411 Questions and Problems  511

5.1 Intrinsic Semiconductors  412 Chapter 6

5.1.1 Silicon Crystal and Energy Band Semiconductor Devices  527
Diagram 412
5.1.2 Electrons and Holes  413 6.1 Ideal pn Junction  528
5.1.3 Conduction in Semiconductors  416 6.1.1 No Applied Bias: Open Circuit  528
5.1.4 Electron and Hole Concentrations  418 6.1.2 Forward Bias: Diffusion
5.2 Extrinsic Semiconductors  426 Current 533
5.2.1 n-Type Doping  427 6.1.3 Forward Bias: Recombination and
5.2.2 p-Type Doping  429 Total Current  539
5.2.3 Compensation Doping  430 6.1.4 Reverse Bias  541
5.3 Temperature Dependence of 6.2 pn Junction Band Diagram  548
­Conductivity  435 6.2.1 Open Circuit  548
5.3.1 Carrier Concentration Temperature 6.2.2 Forward and Reverse Bias  550
Dependence 435 6.3 Depletion Layer Capacitance of the pn
5.3.2 Drift Mobility: Temperature and Junction 553
Impurity Dependence  440

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 x Contents

6.4 Diffusion (Storage) Capacitance and Chapter 7

Dynamic Resistance  559 Dielectric Materials and
6.5 Reverse Breakdown: Avalanche Insulation 659
and Zener Breakdown  562
6.5.1 Avalanche Breakdown  562 7.1 Matter Polarization and Relative
6.5.2 Zener Breakdown  564 ­Permittivity  660
6.6 Light Emitting Diodes (LED) 566 7.1.1 Relative Permittivity: Definition  660
6.6.1 LED Principles  566 7.1.2 Dipole Moment and Electronic
6.6.2 Heterojunction High-Intensity Polarization 661
LEDs 568 7.1.3 Polarization Vector P  665
6.6.3 Quantum Well High Intensity 7.1.4 Local Field Eloc and Clausius–
LEDs 569 Mossotti Equation  669
6.7 Led Materials and Structures  572 7.2 Electronic Polarization: Covalent
6.8 Led Output Spectrum  576 ­Solids  671
6.9 Brightness and Efficiency of LEDs  582 7.3 Polarization Mechanisms  673
6.10 Solar Cells  586 7.3.1 Ionic Polarization  673
6.10.1 Photovoltaic Device Principles  586 7.3.2 Orientational (Dipolar)
6.10.2 Series and Shunt Resistance  593 Polarization 674
6.10.3 Solar Cell Materials, Devices, and 7.3.3 Interfacial Polarization  676
Efficiencies 595 7.3.4 Total Polarization  678
6.11 Bipolar Transistor (BJT)  598 7.4 Frequency Dependence: Dielectric
6.11.1 Common Base (CB) dc Constant and Dielectric
Characteristics 598 Loss 679
6.11.2 Common Base Amplifier  607 7.4.1 Dielectric Loss  679
6.11.3 Common Emitter (CE) dc 7.4.2 Debye Equations, Cole–Cole
Characteristics 609 Plots, and Equivalent Series
6.11.4 Low-Frequency Small-Signal Circuit 688
Model 611 7.5 Gauss’s Law and Boundary
6.12 Junction Field Effect Transistor ­Conditions  691
(JFET) 614 7.6 Dielectric Strength and Insulation
6.12.1 General Principles  614 Breakdown 696
6.12.2 JFET Amplifier  620 7.6.1 Dielectric Strength: Definition  696
6.13 Metal-Oxide-Semiconductor Field Effect 7.6.2 Dielectric Breakdown and Partial
Transistor (MOSFET) 624 Discharges: Gases  697
6.13.1 Field Effect and Inversion  624 7.6.3 Dielectric Breakdown: Liquids  700
6.13.2 Enhancement MOSFET  626 7.6.4 Dielectric Breakdown: Solids  701
6.13.3 Threshold Voltage  631 7.7 Capacitor Dielectric Materials  710
6.13.4 Ion Implanted MOS Transistors and 7.7.1 Typical Capacitor Constructions  710
Poly-Si Gates  633 7.7.2 Dielectrics: Comparison  715
Additional Topics  635 7.8 Piezoelectricity, Ferroelectricity,
6.14 pin Diodes, Photodiodes, and Solar and Pyroelectricity  719
Cells 635 7.8.1 Piezoelectricity 719
6.15 Semiconductor Optical Amplifiers and 7.8.2 Piezoelectricity: Quartz Oscillators
Lasers 638 and Filters  724
Defining Terms  641 7.8.3 Ferroelectric and Pyroelectric
Questions and Problems  645 Crystals 727

kas28183_fm_i-xiv_1.indd 10 2/28/17 9:48 PM

 Contents xi

Additional Topics  734 8.6.2 Initial and Maximum

7.9 Electric Displacement and Depolarization Permeability 802
Field 734 8.7 Soft Magnetic Materials: Examples
7.10 Local Field and the Lorentz Equation  738 and Uses  803
7.11 Dipolar Polarization  740 8.8 Hard Magnetic Materials: Examples
7.12 Ionic Polarization and Dielectric and Uses  806
Resonance 742 8.9 Energy Band Diagrams and
7.13 Dielectric Mixtures and Heterogeneous Magnetism 812
Media 747 8.9.1 Pauli Spin Paramagnetism  812
Defining Terms  750 8.9.2 Energy Band Model of
Questions and Problems  753 Ferromagnetism 814
8.10 Anisotropic and Giant
Chapter 8 Magnetoresistance 815
Magnetic Properties and 8.11 Magnetic Recording Materials  820
Superconductivity 767 8.11.1 General Principles of Magnetic
Recording 820
8.1 Magnetization of Matter  768 8.11.2 Materials for Magnetic Storage  825
8.1.1 Magnetic Dipole Moment  768 8.12 Superconductivity  829
8.1.2 Atomic Magnetic Moments  769 8.12.1 Zero Resistance and the Meissner
8.1.3 Magnetization Vector M  770 Effect 829
8.1.4 Magnetizing Field or Magnetic Field 8.12.2 Type I and Type II
Intensity H  773 Superconductors 832
8.1.5 Magnetic Permeability and Magnetic 8.12.3 Critical Current Density  834
Susceptibility 774 8.13 Superconductivity Origin  838
8.2 Magnetic Material Classifications  778 Additional Topics  840
8.2.1 Diamagnetism 778 8.14 Josephson Effect  840
8.2.2 Paramagnetism 780 8.15 Flux Quantization  842
8.2.3 Ferromagnetism 781 Defining Terms  843
8.2.4 Antiferromagnetism 781 Questions and Problems  847
8.2.5 Ferrimagnetism 782
Chapter 9
8.3 Ferromagnetism Origin and the Exchange
Interaction 782 Optical Properties of Materials  859
8.4 Saturation Magnetization and Curie
Temperature 785 9.1 Light Waves in a Homogeneous
8.5 Magnetic Domains: Ferromagnetic Medium 860
Materials 787 9.2 Refractive Index  863
8.5.1 Magnetic Domains  787 9.3 Dispersion: Refractive Index–Wavelength
8.5.2 Magnetocrystalline Anisotropy  789 Behavior 865
8.5.3 Domain Walls  790 9.4 Group Velocity and Group Index  870
8.5.4 Magnetostriction 793 9.5 Magnetic Field: Irradiance and Poynting
8.5.5 Domain Wall Motion  794 Vector 873
8.5.6 Polycrystalline Materials and the M 9.6 Snell’s Law and Total Internal Reflection
versus H Behavior  795 (TIR) 875
8.5.7 Demagnetization 799 9.7 Fresnel’s Equations  879
8.6 Soft and Hard Magnetic Materials  801 9.7.1 Amplitude Reflection and Transmission
8.6.1 Definitions 801 Coefficients 879

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 xii Contents

9.7.2 Intensity, Reflectance, and 9.19 Electro-Optic Effects  928

Transmittance 885 Defining Terms  932
9.8 Complex Refractive Index Questions and Problems  935
and Light Absorption  890 Appendix A
9.9 Lattice Absorption  898
9.10 Band-To-Band Absorption  900
Bragg’s Diffraction Law and X-ray
9.11 Light Scattering in Materials  903 Diffraction 941
9.12 Attenuation in Optical Fibers  904 Appendix B
9.13 Luminescence, Phosphors, and White
Leds 907
Major Symbols and Abbreviations  947
9.14 Polarization  912 Appendix C
9.15 Optical Anisotropy  914 Elements to Uranium  955
9.15.1 Uniaxial Crystals and Fresnel’s
Optical Indicatrix  915 Appendix D
9.15.2 Birefringence of Calcite  919 Constants and Useful Information  959
9.15.3 Dichroism 920
9.16 Birefringent Retarding Plates  920 Index 961
9.17 Optical Activity and Circular
Birefringence 922 Periodic Table  978
9.18 Liquid Crystal Displays (LCDs) 924

Left: Circular bright rings make up the diffraction pattern

obtained when an electron beam is passed through a
thin polycrystalline aluminum sheet. The pattern results
from the wave behavior of the electrons; the waves are
diffracted by the Al crystals. Right: A magnet brought to
the screen bends the electron paths and distorts the dif-
fraction pattern. The magnet would have no effect if the
pattern was due to X-rays, which are electromagnetic
waves. Courtesy of Farley Chicilo

kas28183_fm_i-xiv_1.indd 12 3/7/17 7:23 PM

 PREFACE

FOURTH EDITION line defects; planar defects; crystal

surfaces; Grüneisen’s rule.
The textbook represents a first course in elec-
tronic materials and devices for undergraduate Chapter 2 Temperature dependence of resis-
students. With the additional topics, the text can tivity, strain gauges, Hall effect;
also be used in a graduate-level introductory ionic conduction; Einstein relation
course in electronic materials for electrical engi- for drift mobility and diffusion;
neers and material scientists. The fourth edition is ac conductivity; resistivity of thin
an extensively revised and extended version of films; interconnects in microelec-
the third edition based on reviewer comments and tronics; electromigration.
the developments in electronic and optoelectronic Chapter 3 Electron as a wave; infinite poten-
materials over the last ten years. The fourth edi- tial well; confined electron in a
tion has many new and expanded topics, new ­finite potential energy well; stimu-
worked examples, new illustrations, and new lated emission and photon amplifi-
homework problems. The majority of the illustra- cation; He–Ne laser, optical fiber
tions have been greatly improved to make them amplification.
clearer. A very large number of new homework Chapter 4 Work function; electron photo-
problems have been added, and many more solved emission; secondary emission;
problems have been provided that put the con- electron affinity and photomulti-
cepts into applications. More than 50% of the il- plication; Fermi–Dirac statistics;
lustrations have gone through some kind of conduction in metals; thermoelec-
revision to improve the clarity. Furthermore, tricity and Seebeck coefficient;
more terms have been added under Defining thermocouples; phonon concentra-
Terms, which the students have found very useful. tion changes with temperature.
Bragg’s diffraction law that is mentioned in sev-
eral chapters is kept as Appendix A for those Chapter 5 Degenerate semiconductors; direct
readers who are unfamiliar with it. and indirect recombination; E vs.
The fourth edition is one of the few books on k diagrams for direct and indirect
the market that have a broad coverage of elec- bandgap semiconductors; Schottky
tronic materials that today’s scientists and engi- junction and depletion layer;
neers need. I believe that the revisions have Seebeck effect in semiconductors
improved the rigor without sacrificing the origi- and voltage drift.
nal semiquantitative approach that both the stu- Chapter 6 The pn junction; direct bandgap
dents and instructors liked. The major revisions in pn junction; depletion layer capac-
scientific content can be summarized as follows: itance; linearly graded junction;
hyperabrupt junctions; light emit-
Chapter 1 Thermal expansion; kinetic mole­ ting diodes (LEDs); quantum well
cular theory; atomic diffusion; high intensity LEDs; LED materi-
­molecular collisions and vacuum als and structures; LED character-
deposition; particle flux density; istics; LED spectrum; brightness

xiii

kas28183_fm_i-xiv_1.indd 13 2/28/17 9:48 PM

 xiv Preface

and efficiency of LEDs; multi- ∙ Even simple concepts have examples to aid
junction solar cells. learning.
Chapter 7 Atomic polarizability; interfacial ∙ Most students would like to have clear dia-
polarization; impact ionization grams to help them visualize the explanations
in gases and breakdown; and understand concepts. The text includes
­supercapacitors. 565 illustrations that have been profession-
Chapter 8 anisotropic and giant magnetore- ally prepared to reflect the concepts and aid
sistance; magnetic recording the explanations in the text. There are also
­materials; longitudinal and numerous photographs of practical devices
­vertical magnetic recording; and scientists and engineers to enhance the
­materials for magnetic storage; learning experience.
superconductivity. ∙ The end-of-chapter questions and problems
Chapter 9 Refractive and group index of (346 in total) are graded so that they start
Si; dielectric mirrors; free car- with easy concepts and eventually lead to
rier absorption; liquid crystal more sophisticated concepts. Difficult prob-
­displays. lems are identified with an asterisk (*). Many
practical applications with diagrams have
been included.
ORGANIZATION AND FEATURES
∙ There is a glossary, Defining Terms, at the
In preparing the fourth edition, as in previous edi- end of each chapter that defines some of the
tion, I tried to keep the general treatment and concepts and terms used, not only within the
various proofs at a semiquantitative level without text but also in the problems.
going into detailed physics. Many of the problems ∙ The end of each chapter includes a section Ad-
have been set to satisfy engineering accreditation ditional Topics to further develop important
requirements. Some chapters in the text have ad- concepts, to introduce interesting applications,
ditional topics to allow a more detailed treatment, or to prove a theorem. These topics are in-
usually including quantum mechanics or more tended for the keen student and can be used as
mathematics. Cross referencing has been avoided part of the text for a two-semester course.
as much as possible without too much repetition ∙ The text is supported by McGraw-Hill’s text-
and to allow various sections and chapters to be book website that contains resources, such
skipped as desired by the reader. The text has as  solved problems, for both students and
been written so as to be easily usable in one- ­instructors.
semester courses by allowing such flexibility.
∙ The fourth edition is supported by an exten-
Some important features are:
sive PowerPoint presentation for instructors
∙ The principles are developed with the mini- who have adopted the book for their course.
mum of mathematics and with the emphasis The PowerPoint has all the illustrations in
on physical ideas. Quantum mechanics is part color, and includes additional color photos.
of the course but without its difficult mathe- The basic concepts and equations are also
matical formalism. highlighted in additional slides.
∙ There are numerous worked examples or ∙ There is a regularly updated online extended
solved problems, most of which have a prac- Solutions Manual for all instructors; simply
tical significance. Students learn by way of locate the McGraw-Hill website for this
examples, however simple, and to that end a textbook. The Solutions Manual provides
large number (227 in total) of solved prob- not only detailed explanations to the solu-
lems have been provided. tions, but also has color diagrams as well as

kas28183_fm_i-xiv_1.indd 14 2/28/17 9:48 PM

 Preface 1

references and helpful notes for instructors. former Global Brand Manager, at McGraw-Hill
(It also has the answers to those “why?” Education for their continued help throughout the
questions in the text.) writing and production of this edition. They were
always enthusiastic, encouraging, forgiving
(every time I missed a deadline) and always finding
ACKNOWLEDGMENTS solutions. It has been a truly great experience
working with MHE since 1993. I’m grateful to
My gratitude goes to my past and present graduate
Julie De Adder (Photo Affairs) who most dili-
students and postdoctoral research fellows, who
gently obtained the permissions for the third-
have kept me on my toes and read various sections
party photos in the fourth edition without missing
of this book. I have been fortunate to have a col-
any. The copyright fees (exuberant in many cases)
league and friend like Charbel Tannous (Brest
have been duly paid and photos from this book or
University) who, as usual, made many sharply
its PowerPoint should not be copied into other
critical but helpful comments, especially on Chap-
publications without contacting the original
ter 8. My best friend and colleague of many years
copyright holder. If you are an instructor and like
Robert Johanson (University of S ­ askatchewan),
the book, and would like to see a fifth edition,
with whom I share teaching this course, also pro-
perhaps a color version, the best way to make
vided a number of critical comments towards the
your comments and suggestions heard is not to
fourth edition. A number of reviewers, at various
write to me but to write directly to the Electrical
times, read various portions of the manuscript and
Engineering Editor, McGraw-Hill Education, 501
provided extensive comments. A number of in-
Bell St., Dubuque, IA 52001, USA. Both instruc-
structors also wrote to me with their own com-
tors and students are welcome to email me with
ments. I incorporated the majority of the
their comments. While I cannot reply to each
suggestions, which I believe made this a better
email, I do read all my emails and take note; it
book. No textbook is perfect, and I’m sure that
was those comments that led to a major content
there will be more suggestions (and corrections)
revision in this edition.
for the next edition. I’d like to personally thank
them all for their invaluable critiques.
I’d like to thank Tina Bower, my present Safa Kasap
Product Developer, and Raghu Srinivasan, my Saskatoon, March, 2017

“The important thing in science is not so much to obtain new facts as to discover new ways of
thinking about them.”

Sir William Lawrence Bragg

To Nicolette

kas28183_fm_i-xiv_1.indd 1 2/28/17 9:48 PM

 Left: GaAs ingots and wafers. GaAs is a III–V compound semiconductor
because Ga and As are from Groups III and V, respectively.
Right: An InxGa1−xAs (a III–V compound semiconductor)-based
photodetector.
Left: Courtesy of Sumitomo Electric Industries. Right: Courtesy of
Thorlabs.

Left: A detector structure that will be used to detect dark matter particles. Each individual cylindrical detector has a CaWO4 single crystal,
similar to that shown on the bottom right. These crystals are called scintillators, and convert high-energy radiation to light. The Czochralski
technique is used to grow the crystal shown on top right, which is a CaWO4 ingot. The detector crystal is cut from this ingot.
Left: Courtesy of Max Planck Institute for Physics. Right: Reproduced from Andreas Erb and Jean-Come Lanfranchi, CrystEngCom, 15,
2301, 2015, by permission of the Royal Society of Chemistry. All rights reserved.

kas28183_ch01_002-123.indd 2 1/28/17 7:41 AM