Semiconductor

Energy Band Gap in a

Band Gap in a Semiconductor by using a Junction Diode.

Object:- To determine the Energy

400Cor P
Required apparatus:- Semiconductor diode kit,
thermometer (0-110°C
D-uOC Por 2ene

Theory
A semi-conductor doped or intrinsic always possesses an energY gap between its
conduction and valence bands. For conduction of electricity, a certain amount of energy is to be

givento the electron, so that it goes from the valence band to the conduction band. This energy so
needed is the measure of the energy gap AE between the top and bottom of valence and conduction
bands respectively. When a P-N junction is reverse biased as shown figure1. the current through the
junction is due to minority carriers i.e. due to electrons in P section and holes in N section. The
concentration of these carriers depends upon the energy gap AE.
For small range of temperature relation we can put as,

log I, = Constant- 5.036 AE [10°/T]

Obviously therefore, if a graph is plotted between log l, and áo?}T, a straight line would be obtained.
Where the slope of this line = 5.036 AE

Here AE is in electron volts.

Procedure

Plug the mains lead to the nearest mains socket carrying 230V 10% at 50 Hz A.C. Insert the
therrnometer and the diode in the holes of the oven (The hole near to the meter is for diode OA-
79).Plug the two leads to the diode in the socket, Red plug in Red socket and Black plug in Black
socket. Make the connection as per fig. Now put the power ON/OFF Switch to 'ON' position and see
that the jewel light is glowing.Put the 'OVEN' switch 'ON' position and allow the oven temperature T
increases up to 90°C.

Note: When the temperature reaches 95°C Switch off the oven enabling the
further and become stable 90°C temperature to rise

When the temperature becomes stable start taking readings of current and
temperature. The
Current reading should be taken in steps of 59 temperature. The readings should be taken during the
fall of temperature from 80°C downwards. Tabulate your
readings
in the form shown beloW:
 Temperature in°C Reverse saturation Temperature T
in °K
10/T
Current in uA l Log1ols
(absolute)

Plot a graph between the readings of 10°/T on x-axis. The graph should come as a straight
9
line cutting both the x-axis and y-axis.

10. Now determine slope of the line.

11 After determining the slope the line calculate the Band Gap as follows:
************....ev.

Determination of Slope through Least Square Fit Method:

X=10 /T y=logos Xiyi

Percentage Error:
(Standard value Observed Value) X100
% ERROR E

Standard Value

Precautions:

The maximum
temperature should not exceed 95°C
Buib of the thermometer should be
inserted well in the oven,
3. Silicon diodes should not be used with the set up as in that
125°C and the case the
oven thermometer provided will not stand to this
temperature needed is
temperature.

THERMOMETER
110C

OA 79
D.C. SuPPLY 2V
+

DPM 200uA

oVEN

Fig. 1
Experimental Setup

DIAGRAM:
 DETERMINATION OFENERGY GAP OF ASEMICONDUCTOR
AIM: To determine energy gap of a semiconductor.
PAGE
APPARATUs: P-N diode, DC regulated power supply, Voltmeter, Mill ammeter, 1 KW
resistor, Beaker,
Thermometer, Heater.

PRINCIPLE: Semiconductor energy gap is determined by passing small forward current

through Sl, Ge, GaAsAlI, GaAsP, SiC junction liodes. The junction voltage varlation is studied with
temperature. From temperature versus junction voltage curve, energy gap is determined.

FORMULA: A pn crystal is called junction diode. Diode can be forward or revérse biased using a
voltage source. During forward blas forward current flows through the diode. The forward current is
given by

IIaeT 1
Where I is called forward current
I is called reverse current or reverse saturation current
qis electronic charge e =1.6x10 Coulomb
nis called ideality factor varies between 1 and 1.5 [2]
kis Boltzman constant= 1.38x10-231/K
Tis temperature in degree Kelvin.
When the diode is reverse biased negligible reverse current flows through the diode. The reverse
current is given by

a8T( r)
The constant B appearing lin equation 2 is a constant connected with the structure or the area ofthe
depletion region.
Substituting equation 2 in equation 1, we get

IUr r {e"a-1
er T-1
Taking natural logarithm on both sides, we get the following expression for junction voltage verses
temperature.

mkT

V-n(
The above Eq represents a straight line, and its slope, Y- intercept are given by
Yintercept
Slope-In
Energy gap Eo is determined from Y-intercept at T 0K Le

E9 Ytercept
Circuit diagram

vOLTMSTRR
IKRSISTOR MILLIAMMETER
THEORY:
distinct energy levels. when atoms join to make a solid,
PACG 2
the allowed
In an atom electron occupy
The bands are separated by regions of enerey levels that the
enerey levels are grouped into bands.
electrons are to be in. These regions
forbidden forbidden Energy gaps
are called band or

and the forbldden enerEy gap is ilustrated in figure 1. The electrons of the
gaps. Energy bands
outermost shell of an atom are the valence electrons. These occupy the valence band. Any electrons
in the conduction band are not attached to any single atom, but are free to move through the

material when driven by an external electric field.

Electron
Energy
conductlon Bend

Forbidden Energy gap

Valence Band

Postion in Material
EE
Figure 1

In a metal such as copper, the valence and conduction bands overlap as illustrated in figure 2a. There
is no forbidden energy gap and electrons in the topmost levels are free to absorb energy and move to
higher energy levels within the conduction band.. Thus the electrons are free to move under the
inffuence of an electric field and conduction is possible. These materials are referred to as
conductors. In an Insulator such as sllicon dioxide (SiO), the conduction band is separated from the
valence band by a large enrgy gap of 9.0 eV. All energy levels in the valance band are occupied and
all the enerey levels in the conduction band are empty. It would take 9.0 eV to move an electron
from the valence band to the conduction band and small electric fields would not be sufficient to
provide the enerey, so Sio, does not conduct electrons and is called an insulator. Notice the large
enerey gap shown in figure 2b. Semiconductors are similar to the insulators insofar as they do have
an energy gap only the energy gap for a semiconductor is much smaller ex, Silicon's enerEY gap is 1.1
eV and Germanium's energy gap Is 0.7 eV at 300 K. These are pure intrinsic semiconductors.
Observe the energy gap in figure 2 c.
Electon Electpn Electon
Energy Energy Eneigy

5,-9e

Posilon in Uaterial Positon in Matenat Posinon in Matenal

Hgure Za. Metal Flgure 2. lnsulator Flgure 2c. Semiconductor
(Bande Oveslap) darge Enargy gapl (small Energy gap)

For finite temperatures, a probability exists that electrons from the top of the valence band in an
intrinsic semiconductor will be thermaly excited across the energy gap into the conduction
band. The vacant spaces left by the electrons which have left the valence band are called holes which
also contribute to the conduction because electrons can easily move into the vacancies. If an electric
field is applied, the electrons flow in one direction and the holes move in the opposite direction. The
holes act as a positive charge (deficlency of negative charge) so the direction of current (effective
positive charge) is in the same direction, For pure silicon at 300 °K, the number of electrons residing
in the conduction band as a result
of thermal
excitement from the valence band is 1.4x 10 /cm
 PAGE 29
semiconductors are pure
insulators. As the temperature is
At absolute zero degree temperature,
which acquire
lattice and few electrons,
increased thermal energy create vibrations.in crystal conduction
free, and move to the
sufficient vibrational energy break their covalent bond, become and terrned as
is deslgnated as energy gap Eg
band. The energy required to rapture the covalent bond
cannot have partially
than Eg is not acceptable or one
energy gap or band gap energy. Energy less at room
as forbidden gap energy. In silicon crystal,
ruptured bond, hence this enerey is alo called atoms. ft is
broken per cubic meter out of 10
temperature (3009K) about 10 covalent bonds are atoms on each
less than one atom per thousand
only one atom in 10 exits with broken bond. This is and the material
in conduction
of the three-crystal axis. The electrons that are freed take part
becomes semiconductor. Such a semiconductor is known as intrinsic semiconductor. The resistivity of

such a semiconductor falls in the range of 04 to 2500 dhmmeter.

As the temperature increases
above room temperature more and more covalent bonds are broken and conduction increase rapidly
and resistivity fall. Intrinsic semiconductors are useless for electronics applications because of their
low conduction at room temperature. Adding impurity atom from the third or fifth group elements
can increase the conduction. This process of adding impure atom is known as doping and the doped
semiconductor becomes extrinsic semiconductor. Addition of impurity from the fifth group element
result in n-type semiconductor and addition of impurity atom from third group results in p-type
semiconductor. EnergY gap is a very important parameter of semiconductor that decides its
applicability. Determination of semiconductor energy gap is an important experiment in physicslab.
Pure semiconductors or intrinsic semiconductors are not available easily for measurements. Extrinsic
semiconductors are easily available for EG measurements.

PROCEDURE:
To determine the energy gap EG a small constant current of the order of 100-200 pAis passed
through the diode at varlous temperatures. The voltages developed at the junction are noted. The
junction voltage versus temperature graph is drawn. From the straight-line graph, Yinterceptgives
the EG directhy in electron volt. From the slope, constant B is calculated using equation. For small
forward curent of the order of hundreds of microampere e op is unity. Which indicatethatthe

graphs for different diodes are all parallel and the constant B is independent of diode material, it
depends only on the forward current, hence it is connected with majority carriers.

TABLE FORM FOR THE MEAsUREMENT OF JUNCTION VOLTAGE

Constant current passing through the semiconductor/diode is

Temp.of the bath

S.No Temp.of the bath (Kelvin) Junction voltage (mV)
(Centigrade)

GRAPH:

A graph is drawn between temperature of the bath on X-axis and corresponding junction voBtage
values on Y-axis we get a straight line as shown in Fig. below

TR)
RESULT: Energy gap of given semiconductor diode Is