PD - 97079A

PDP SWITCH IRFP4229PbF

Features
l Advanced Process Technology
Key Parameters
l Key Parameters Optimized for PDP Sustain, VDS min 250 V
Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V
l Low E PULSE Rating to Reduce Power
RDS(ON) typ. @ 10V 38 m:
Dissipation in PDP Sustain, Energy Recovery
IRP max @ TC= 100°C 87 A
and Pass Switch Applications
l Low Q G for Fast Response
TJ max 175 °C
l High Repetitive Peak Current Capability for
D D
Reliable Operation
l Short Fall & Rise Times for Fast Switching

l175°C Operating Junction Temperature for

S
Improved Ruggedness G D
G
l Repetitive Avalanche Capability for Robustness

and Reliability S TO-247AC

G D S
Gate Drain Source

Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Parameter Max. Units
VGS Gate-to-Source Voltage ±30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 44 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 31
IDM Pulsed Drain Current c 180
IRP @ TC = 100°C Repetitive Peak Current g 87
PD @TC = 25°C Power Dissipation 310 W
PD @TC = 100°C Power Dissipation 150
Linear Derating Factor 2.0 W/°C
TJ Operating Junction and -40 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw x
10lb in (1.1N m) x N
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case f ––– 0.49
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient f ––– 40

Notes  through … are on page 8

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IRFP4229PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 210 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 38 46 mΩ VGS = 10V, ID = 26A e
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 250V, VGS = 0V
––– ––– 1.0 mA VDS = 250V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 83 ––– ––– S VDS = 25V, ID = 26A
Qg Total Gate Charge ––– 72 110 nC VDD = 125V, ID = 26A, VGS = 10V e
Qgd Gate-to-Drain Charge ––– 26 –––
tst Shoot Through Blocking Time 100 ––– ––– ns VDD = 200V, VGS = 15V, RG= 4.7Ω
L = 220nH, C= 0.3µF, VGS = 15V
––– 790 –––
EPULSE Energy per Pulse µJ VDS = 200V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V
––– 1390 –––
VDS = 200V, RG= 4.7Ω, TJ = 100°C
Ciss Input Capacitance ––– 4560 ––– VGS = 0V
Coss Output Capacitance ––– 390 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz,
Coss eff. Effective Output Capacitance ––– 290 ––– VGS = 0V, VDS = 0V to 200V
LD Internal Drain Inductance ––– 5.0 ––– Between lead, D

nH 6mm (0.25in.)
G
LS Internal Source Inductance ––– 13 ––– from package
S
and center of die contact

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 300 mJ
EAR Repetitive Avalanche Energy c ––– 31 mJ
VDS(Avalanche) Repetitive Avalanche Voltagec 300 ––– V
IAS Avalanche Currentd ––– 26 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– 44 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 180 integral reverse
(Body Diode) c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 26A, VGS = 0V e
trr Reverse Recovery Time ––– 190 290 ns TJ = 25°C, IF = 26A, VDD = 50V
Qrr Reverse Recovery Charge ––– 840 1260 nC di/dt = 100A/µs e

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 IRFP4229PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.5V 6.5V
6.0V 6.0V
100 100
BOTTOM 5.5V BOTTOM 5.5V

5.5V

10 10

5.5V
≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH
Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.5
ID = 26A

RDS(on) , Drain-to-Source On Resistance

3.0 VGS = 10V
ID, Drain-to-Source Current(Α)

100

TJ = 175°C 2.5

10
(Normalized)
2.0

1 1.5
TJ = 25°C

1.0
0.1
VDS = 25V
0.5
≤ 60µs PULSE WIDTH
0.01
0.0
4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

1600 1400
L = 220nH L = 220nH
C = 0.3µF 1200 C = Variable
100°C 100°C
1200 25°C 25°C
Energy per pulse (µJ)

Energy per pulse (µJ)

1000

800
800
600

400
400

200

0 0
150 160 170 180 190 200 100 110 120 130 140 150 160 170

VDS, Drain-to -Source Voltage (V) ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Drain Current
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 IRFP4229PbF
2000 1000
L = 220nH

C= 0.3µF

ISD , Reverse Drain Current (A)

1600
C= 0.2µF
100
C= 0.1µF
Energy per pulse (µJ)

TJ = 175°C
1200

10

800

1
400 TJ = 25°C

VGS = 0V
0 0.1
25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
Temperature (°C) VSD, Source-to-Drain Voltage (V)

Fig 7. Typical EPULSE vs.Temperature Fig 8. Typical Source-Drain Diode Forward Voltage

7000 20
VGS = 0V, f = 1 MHZ ID= 26A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 160V

VGS, Gate-to-Source Voltage (V)

6000 Crss = Cgd
16 VDS = 100V
Coss = Cds + Cgd
5000 VDS = 40V
C, Capacitance (pF)

Ciss
12
4000

3000 8

2000 Coss
4
1000
Crss
0
0
0 20 40 60 80 100 120
1 10 100 1000
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

50 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)

40 1µsec
100
ID, Drain Current (A)

100µsec 10µsec

30

10
20

1
10
Tc = 25°C
Tj = 175°C
Single Pulse
0 0.1
25 50 75 100 125 150 175 1 10 100 1000
TJ , Junction Temperature (°C) VDS , Drain-to-Source Voltage (V)

Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area
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1200
0.40
()
RDS (on), Drain-to -Source On Resistance Ω

EAS, Single Pulse Avalanche Energy (mJ)

ID = 26A I D
1000 TOP 5.8A
9.7A
0.30 BOTTOM 26A
800

0.20 600

400
TJ = 125°C
0.10

TJ = 25°C 200

0.00 0
5 6 7 8 9 10 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)

Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0 140
ton= 1µs
Duty cycle = 0.25
VGS(th) Gate threshold Voltage (V)

4.5 120
Half Sine Wave

Repetitive Peak Current (A)

Square Pulse
4.0 100
ID = 250µA

3.5 80

3.0 60

2.5 40

2.0 20

1.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175

TJ , Temperature ( °C ) Case Temperature (°C)

Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs.
Case temperature
1

D = 0.50
Thermal Response ( ZthJC )

0.1 0.20

0.10
R1
R1
R2
R2
R3
R3 Ri (°C/W) τι (sec)
0.05 τJ τC
τJ
τ1
τ 0.104678 0.000148
τ2 τ3
τ1 τ2 τ3
0.222607 0.001836
0.01 0.02 Ci= τi/Ri
0.01 Ci= τi/Ri 0.16298 0.01527

Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP4229PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+
***
VGS=10V
ƒ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD
*
RG • dv/dt controlled by RG V DD Re-Applied
+
• Driver same type as D.U.T. ** Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* Use P-Channel Driver for P-Channel Measurements *** VGS = 5V for Logic Level Devices
** Reverse Polarity for P-Channel

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS

Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms

Id
Vds

Vgs

L
VCC
DUT
0
Vgs(th)
1K

Qgs1 Qgs2 Qgd Qgodr

Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform

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 IRFP4229PbF

A
PULSE A
RG C
DRIVER

PULSE B
VCC

B
Ipulse
RG
DUT tST

Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms

Fig 21c. EPULSE Test Waveforms

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IRFP4229PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

EXAMPLE: T HIS IS AN IRFPE30
WIT H AS SEMBLY PART NUMBER
LOT CODE 5657 INT ERNAT IONAL
ASS EMBLED ON WW 35, 2000 RECT IF IER IRFPE30

IN T HE ASSEMBLY LINE "H" LOGO 035H

56 57
Note: "P" in assembly line DAT E CODE
position indicates "Lead-Free" ASS EMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.85mH, RG = 25Ω, IAS = 26A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Half sine wave with duty cycle = 0.25, ton=1µsec. Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2007
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