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GATE Questions Analog Circuits

The document provides 6 questions from past GATE exams on electronics topics such as MOSFET devices, CMOS, E-MOSFET applications, and the effects of temperature on transistors. Question 1 asks about advantages of N-channel MOSFETs over P-channel, with the answer being that N-channel is faster. Question 3 asks about what CMOS stands for, with the answer being complementary MOS. Question 6 lists possible effects of increased temperature, with the answers being an increase in BJT current and decrease in MOSFET current.

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Ravi
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152 views3 pages

GATE Questions Analog Circuits

The document provides 6 questions from past GATE exams on electronics topics such as MOSFET devices, CMOS, E-MOSFET applications, and the effects of temperature on transistors. Question 1 asks about advantages of N-channel MOSFETs over P-channel, with the answer being that N-channel is faster. Question 3 asks about what CMOS stands for, with the answer being complementary MOS. Question 6 lists possible effects of increased temperature, with the answers being an increase in BJT current and decrease in MOSFET current.

Uploaded by

Ravi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Everyday Gate Questions:

Day 1:

GATE 1988:

1. In MOSFET devices the N-channel type is better the P-channel type in the
following respects

a. it has better noise immunity


b. it is faster
c. it is TTL compatible
d. it has better drive capability

Answer:

b) It is faster

GATE 1998:

2.

Answer: © Upper 3-dB frequency

Youtube link to watch:

http://youtube.com/watch?v=1-COkXWLdJ0
3. CMOS stands for

a. Common MOS
b. Active-load switching
c. p-channel and n-channel devices
d. complementary MOS

4. Most small-signal E-MOSFETs are found in

a. Heavy-current applications
b. Discrete circuits
c. Disk drives
d. Integrated circuit

5. Channel current is reduces on application of a more positive voltage to the


GATE of the depletion mode n-channel MOSFET [GATE-1994]

(true/false)

6. Which of the following effects can be caused by a rise in temperature


[GATE-1990]

a. Increase in MOSFET current (IDS)


b. Increase in BJT current (IC)
c. Decrease in MOSFET current (IDS)
d. Decrease in BJT current (IC)

Answer:

b. Increase in BJT current (IC)


c. Decrease in MOSFET current (IDS)

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