ECE 

442
Solid‐State Devices & Circuits

7. BJT Amplifiers

Jose E. Schutt-Aine
Electrical & Computer Engineering
University of Illinois
jschutt@emlab.uiuc.edu

Jose E. Schutt‐Aine ‐ ECE 442 1
 Amplifiers
• Definitions
– Used to increase the amplitude of an input signal to a
desired level
– This is a fundamental signal processing function
– Must be linear (free of distortion) – Shape of signal
preserved

AMP
vi(t) vo(t)

vo (t ) = Avi (t ), where A is the voltage gain

vo
Voltage Gain : Av =
vi

Load Power ( PL )
Power Gain : Ap =
Input Power ( PI )
Jose E. Schutt‐Aine ‐ ECE 442 2
 Amplifiers
voio
Ap =
vI iI

io
Current Gain : Ai =
ii

Note : Ap = Av Ai

Expressing gain in dB (decibels)

Voltage gain in dB = 20log AV

Current gain in dB = 20log AI

Power gain in dB = 10log AP

Jose E. Schutt‐Aine ‐ ECE 442 3
 Amplifiers

Since output associated with the signal is larger than the input
signal, power must come from DC supply

PDC = V1I1 + V2 I 2

PDC + PI = PL + Pdissipated

PL
η= × 100 = Power Efficiency
PDC

Jose E. Schutt‐Aine ‐ ECE 442 4
 Problem
An amplifier has ±10 V power supplies and an input current of 0.1
mA (sine wave) input voltage 1 V peak-to-peak and an output
voltage with a peak of 9V. The load impedance is 1 kΩ and the
amp draws 9.5 mA from each power supply. Determine:

- the voltage gain

- the current gain
- the power gain
- the power drawn from supplies
- the power dissipated and η
Vo 9
Av = = =9
Vi 1
Av − dB = 20log Av = 20log 9 = 19.1 dB

ˆI = 9 = 9 mA
1k Ω
o
Iˆo 9
Ai = = = 90
The current gain is ˆI 0.1
i

Jose E. Schutt‐Aine ‐ ECE 442 5
 Problem
Ai − dB = 20log 90 = 39.1 dB
9 9
Power at Load = PL = Vo − rms I o − rms = = 40.5 mW
2 2
1 0.1
Power at input = PI = VI − rms I I − rms = = 0.05 mW
2 2
Av =
Pd 40.5
= = 810 Pdissipated = Pdc + PI − PL
PI 0.05
Av − dB = 10log810 = 29.1 dB Pdissipated = 190 − 0.05 − 4.05 = 149.6 mW

PL
Pdc = 10 × 9.5 + 10 × 9.5 = 190 mW η= × 100 = 21.3%
Pdc

Jose E. Schutt‐Aine ‐ ECE 442 6
 Biasing of Amp
Bias will provide quiescent points for input and output about which
variations will take place. Bias maintain amplifier in active region.

VI (t ) = VQI + vI (t )
Vo (t ) = VQO + vo (t ) Av =
dvo
dvI
vo (t ) = Av vI (t ) at Q

Amplifier characteristics are determined by bias point

Jose E. Schutt‐Aine ‐ ECE 442 7
 Voltage Amplifier

vo Avo RL
Voltage gain is : = Av =
vi RL + Ro
Avo vi RL
Input vi = vs
Ri vo =
Ri + RS RL + Ro
Want Ri large ( so vi≈vs) Want Ro small (as small as
(actually want Ri >> Rs) ideal possible) to achieve maximum
Ri=∞ gain Î ideal Ro=0
vo Ri RL
Overall gain : = Avo ⋅
vs Ri + Rs RL + Ro
Jose E. Schutt‐Aine ‐ ECE 442 8
 Voltage Amplifier

In some cases, connecting load to source leads to

signal attenuation; for this case an amplifier with a high
input resistance (greater than source) is needed and
low output resistance. Such an amplifier is a buffer
amplifier.

Jose E. Schutt‐Aine ‐ ECE 442 9
 Voltage Amplifier

vo
Open Circuit Voltage Gain : Avo =
vi io = 0
ideal : Ri = ∞
Ro = 0
Jose E. Schutt‐Aine ‐ ECE 442 10
 Current Amplifier

io
Short Circuit Current Gain : Ais =
ii io = 0

ideal : Ri = 0
Ro = ∞
Jose E. Schutt‐Aine ‐ ECE 442 11
Transconductance Amplifier

io
Short Circuit Transconductance : Gm =
vi
ideal : Ri = ∞
Ro = ∞

Jose E. Schutt‐Aine ‐ ECE 442 12
Transresistance Amplifier

vo
Open Circuit Transresistance : Rm =
ii
ideal : Ri = 0
Ro = 0
Jose E. Schutt‐Aine ‐ ECE 442 13
 Small-Signal Model
• What is a small-signal incremental model?

– Equivalent circuit that only accounts for signal level

fluctuations about the DC bias operating points

– Fluctuations are assumed to be small enough so as

not to drive the devices out of the proper range of
operation

– Assumed to be linear

– Derives from superposition principle

Jose E. Schutt‐Aine ‐ ECE 442 14
Common Emitter Configuration
The emitter current IE can be approximated as:

IE  ISe VBE / VT

An incremental conductance ge can be

defined as
∂I E I S VBE / VT I E
ge ≡ = e =
∂VBE VT VT
1 VT
From which we get: re = =
ge I E
Emitter resistance

26 mV
Usually, VT = 26 mV ⇒ re =
IE
Jose E. Schutt‐Aine ‐ ECE 442 15
 Hybrid-π Incremental Model for BJTs

rπ: input resistance looking into the base

rx: parasitic series resistance looking into base – ohmic base resistance
gm: BJT transconductance
ro=rce: output collector resistance related to the Early effect

Jose E. Schutt‐Aine ‐ ECE 442 16
 Hybrid-π Parameters
∂iC IC
gm = =
∂vBE I C = cons tan t
VT Can show that

rπ is defined as : rπ =
vπ rπ = ( β + 1) re
ib α
gm =
g m vπ β re
Since ib = then rπ =
β gm β = g m rπ
rce = ro is associated with the Early effect

VA VA 1 1
rce = ro = = gm + =
IC β I B rπ re
Jose E. Schutt‐Aine ‐ ECE 442 17
 Common Emitter (CE) Amplifier

Bias: Choose R1 & R2 to set VBÎVE is then set. Choose RE

to set IE~IC. Quiescent point of Vout will be determined by
RC. Emitter is an AC short.
Jose E. Schutt‐Aine ‐ ECE 442 18
 Incremental Model for CE Amplifier
Hybrid-π model (ignoring rx)
Rsig ii io
B C
+ +
+ vout
vin vi RB vπ rπ gmvπ ro RC RL
-
- -

vi
RB = R1 & R2 Rin = = RB & rπ
ii

Sometimes RB  rπ and Rin  rπ

Jose E. Schutt‐Aine ‐ ECE 442 19
 CE Amplifier
vsig Rin vsig RB & rπ
vi = =
Rin + Rsig ( RB & rπ ) + Rsig
vsig rπ
and if RB  rπ , vi 
rπ + Rsig
RB & rπ ( ro & RC & RL )
vo = − g m vsig
( RB & rπ ) + Rsig
vo = − g m vπ ( ro & RC & RL )
vi = vπ
vo
Av == − g m ( ro & RC & RL )
vi
gain from base to collector
Jose E. Schutt‐Aine ‐ ECE 442 20
 CE Amplifier
Open-circuit voltage gain:

Avo = − g m ( ro & RC )
In most cases ro  RC ⇒ Avo = − g m RC

Gv = −
( RB & rπ )
g m ( ro & RC & RL )
( RB & rπ ) + Rsig
and for the case where RB  rπ
β ( ro & RC & RL )
Gv = −
rπ + Rsig
Jose E. Schutt‐Aine ‐ ECE 442 21
 CE Amplifier
Output Impedance

Rout = RC & ro
If ro  RC , Rout  RC
⎛ RL ⎞
from which Av = Avo ⎜ ⎟
⎝ L
R + Ro ⎠

It can be seen that if Rsig >> rπ, the gain will be highly
dependent on β. This is not good because of β variations

If Rsig  rπ , Gv  − g m ( RC & RL & ro )

Jose E. Schutt‐Aine ‐ ECE 442 22
CE with External Resistors

Jose E. Schutt‐Aine ‐ ECE 442 23
 CE with External Resistors
RB

vout = − g m vπ ( RL & RC ) vout

+
vin vπ rπ gmvπ RC RL
vx vπ -
= g m vπ + vx
RE rπ
RE
vπ
vin = vx + vπ + RB
rπ ⎛ RE RB ⎞
vin = ⎜ g m RE + +1+ ⎟ vπ
⎝ rπ rπ ⎠
g m ( RL & RC ) vin
vout =−
RE RB
g m RE + +1+
rπ rπ
Jose E. Schutt‐Aine ‐ ECE 442 24
 CE with External Resistors

vout g m rπ ( RL & RC ) g m rπ ( RL & RC )

=− =−
vin g m rπ RE + RE + rπ + RB RE ( β + 1) + rπ + RB

1
AMB = − g m ( RL & RC )
RE ( β + 1) RB
+ +1
rπ rπ

β ( RL & RC )
AMB =−
RE ( β + 1) + rπ + RB

RE and RB degrade the gain

Jose E. Schutt‐Aine ‐ ECE 442 25
 CE with External Resistors
The gain can be written as:

⎛ β ⎞
β ( RL & RC ) ⎜ ⎟ ( RL & RC )
⎝ β +1⎠
AMB =− =−
RE ( β + 1) + rπ + RB RE +
rπ
+
RB
( β + 1) ( β + 1)
β RB
and since =α neglecting
( β + 1) ( β + 1)
α ( RL & RC )
AMB = −
RE + re
Jose E. Schutt‐Aine ‐ ECE 442 26
 Example
Given VBEON=0.6V, find the gain for the circuit shown

VBQ = 1.5 V

VEQ = 1.5 V − 0.6 V = 0.9 V

0.9 0.9
IE  = = 0.9 mA
RE1 + RE 2 1 k Ω

Jose E. Schutt‐Aine ‐ ECE 442 27
 Example (Cont’)
I C  0.9 mA ⇒ VoutQ = 12 V − 0.9 × 10 = 3 V
AC analysis: RE2 is shorted and RE=RE1=100Ω. Since
β is not known, use:
α RC
AMB = − with α  1
RE + re
VT 26
re = = = 28.8 Ω
I E 0.9
10,000
AMB =− = −77.5 AMB = −77.5
100 + 28.8

Jose E. Schutt‐Aine ‐ ECE 442 28
 Emitter Follower
circuit Incremental model

⎛ vπ ⎞ ⎛ 1 ⎞
vo = ⎜ g m vπ + ⎟ RE = vπ ⎜ g m + ⎟ RE
⎝ rπ ⎠ ⎝ rπ ⎠
⎛ 1⎞
vin = vπ + vo = vπ + vπ RE ⎜ g m + ⎟
⎝ rπ ⎠
Jose E. Schutt‐Aine ‐ ECE 442 29
 Emitter Follower
⎡ ⎛ 1 ⎞⎤
vin = vπ ⎢1 + RE ⎜ g m + ⎟⎥
⎣ ⎝ rπ ⎠⎦

⎛ 1⎞
⎜ g m + ⎟ RE
vo
= ⎝ rπ ⎠
=
( g m rπ + 1) RE
vin ⎛ 1⎞ ( g m rπ + 1) RE + rπ
⎜ g m + ⎟ RE + 1
⎝ rπ ⎠

vo
=
( β + 1) RE
1
Using g m rπ = β vin ( β + 1) RE + rπ

Emitter follower has unity voltage gain

Jose E. Schutt‐Aine ‐ ECE 442 30
 Emitter Follower – Input Impedance

vin vπ ⎡⎣1 + RE ( g m + 1/ rπ ) ⎤⎦
rin = =
ib vπ / rπ

rin = rπ + RE ( β + 1)

Jose E. Schutt‐Aine ‐ ECE 442 31
 Emitter Follower – Output Impedance

vo = −vπ

vo vπ vo vo
io = − g m vπ − = + g m vo +
RE rπ RE rπ

⎡ 1 1⎤ 1
io = vo ⎢ + g m + ⎥ = vo [ rπ + RE ( β + 1) ]
⎣ RE rπ ⎦ RE rπ

Jose E. Schutt‐Aine ‐ ECE 442 32
 Output Impedance (cont’)
Using g m rπ = β
vo RE rπ RE rπ /( β + 1)
= Rout = =
io rπ + RE ( β + 1) RE + rπ /( β + 1)

Rout = RE & rπ /( β + 1)
If we account for rx

( β + 1) RE rπ + rx
'
A = and '
R = RE &
rx + rπ + ( β + 1) RE β +1
MB out

Jose E. Schutt‐Aine ‐ ECE 442 33
Common Base Configuration

Jose E. Schutt‐Aine ‐ ECE 442 34
 Common Base Configuration

vi = −vπ , vo = − g m vπ RC = g m vi RC

vo α RC
Voltage gain = = g m RC =
vi re

io g m vπ − g mvπ β
Current gain = = = = =α
ii ii ⎛ 1⎞ β +1
⎜ g m + ⎟ ( −vπ )
⎝ rπ ⎠
rπ
Rout = RC rin =
β +1
Jose E. Schutt‐Aine ‐ ECE 442 35
 BJT Topologies - Summary

CE CB EF

Avo − g m RC g m RC 1

rπ rπ + RE ( β + 1)
Rin rπ β +1

Rout RC RC RE & rπ /( β + 1)

Jose E. Schutt‐Aine ‐ ECE 442 36