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EC4068D-Analog MOS Integrated Circuits Dhanaraj K. J. Associate Professor ECED, NIT Calicut

1) The document discusses MOSFET threshold voltage including the factors that affect it such as work function difference, gate voltage to change surface potential, depletion charge, and fixed charges. It also discusses how substrate bias affects threshold voltage. 2) The threshold voltage equation is presented showing dependence on various factors. Body effect and how substrate bias impacts threshold voltage is then explained. 3) An example calculation is shown to find the voltage Vx for a given circuit using the threshold voltage equation and body effect parameter gamma. References on analog CMOS design are also listed.

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63 views11 pages

EC4068D-Analog MOS Integrated Circuits Dhanaraj K. J. Associate Professor ECED, NIT Calicut

1) The document discusses MOSFET threshold voltage including the factors that affect it such as work function difference, gate voltage to change surface potential, depletion charge, and fixed charges. It also discusses how substrate bias affects threshold voltage. 2) The threshold voltage equation is presented showing dependence on various factors. Body effect and how substrate bias impacts threshold voltage is then explained. 3) An example calculation is shown to find the voltage Vx for a given circuit using the threshold voltage equation and body effect parameter gamma. References on analog CMOS design are also listed.

Uploaded by

M KIRITI SAI KUMAR
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EC4068D- Analog MOS Integrated Circuits

Dhanaraj K. J.
Associate Professor
ECED, NIT Calicut

1
id  g m v gs  g o vds Small Signal
Channel
2I D conductance
gm 
VGS  VT 
g o  I D ro basically relates to the slope of iD-vDS curve in
the saturation region. This is due to channel length
1 modulation.
ro  rds 
I D

2
 Find the small signal req for the given circuit

v  vs If ro=10k, gm=2mS,
i  g m v gs  R=10k, req=?
ro
vs  iR  vgs  iro  g m ro R  R   v
req=220k
v  iR v
 i   g miR   req   ro  g m ro R  R
ro i
3
 Find the small signal req for the given circuit

If ro=10k, gm=2mS,
R=10k, req=?
v  vd
i   g m v gs  iro  R   g m ro v  v
ro
v  v gs v
 req  
ro  R 
req=950

i 1  g m ro 
v  iR
i  g mv 
ro
4
The value of gate-to-source voltage VGS needed to cause surface
inversion (to create the conducting channel) is called the threshold
voltage VT.
Increasing the VGS (gate to source voltage) above and beyond VT will
not affect the surface potential and the depletion region width. They
will remain approximately constant and equal to their values attained
at the onset of surface inversion.

The main four physical components of the threshold voltage are


1) The work function difference between the gate and the channel
2) The gate voltage component to change the surface potential
3) The gate voltage component to offset the depletion charge
4) The gate voltage component to offset the fixed charges in the
gate-oxide and in the silicon-oxide interface.
Voltage drop across oxide
due to depletion charge
Voltage drop across Surface Charge : due to imperfection in
Depletion region the oxide/substrate interface & doping
At inversion Implants: to adjust VT by
introducing a small doped
region at oxide/substrate surface
QB QOX
VT = MS - 2F - -
Cox Cox

Work-function
difference between
Gate-Oxide Capacitance per unit area
gate material and Si
Oxide permittivity
Depletion Layer Charge
OX = 3.5 x 10 -13 F/cm
COX =
tOX Oxide thickness
~ a few nm
 The threshold voltage of a MOSFET is affected by the voltage which
is applied to the back contact, which is called Body Effect (Substrate
bias effect). The voltage difference between the source and the
bulk, VBS changes the width of the depletion layer and therefore also
the voltage across the oxide due to the change of the charge in the
depletion region.
 Substrate can be thought of as a second gate, and is sometimes
referred to as the back gate, and accordingly the body effect is
sometimes called the back-gate effect.

7
QB Qox
VT  MS  2F  
Cox Cox
QB 0 Qox QB  QB 0
 MS  2F   
Cox Cox Cox
QB  QB 0   2F  VSB   2F 
 VT 0   VT 0  2qN A Si 
Cox  Cox 
 

VT  VT 0    2F  VSB   2F 
 ox
2qN A Si Cox 
 , substrate - bias (or body - effect) coefficient. tox
Cox
For nMOS F is negative,  is positive and VSB is positive.
For pMOS F is positive,  is negative and VSB is negative.
8
Q. Find Vx for the following circuit if =0.4, kn=200A/V2. VT0=1V, |-2F|=0.6

 Vx2 
T2 linear; I D 2  k n  5  1Vx  
 2 

T1 saturation; I D1 
kn
5  Vx  VT 1 2
2
Vx2
1
5  Vx  VT 1   4Vx 
2

2 2

VT1 Vx
5  Vx  VT 1 2  8Vx  Vx2 ……..(1)

1 1.17 VT 1  VT 10     2F  VSB   2F 


 
1.064 1.21
1.069 1.21 VT 1  1  0.4 0.6  Vx  0.6 ……..(2)
 Vx  1.21V
9
1. Razavi B. Design of Analog CMOS Integrated Circuits, 2001. New
York, NY: McGraw-Hill. 2017;587(589):83-90
2. P. Allen & D. Holberg, CMOS Analog Circuit Design, 3rd Edition,
Oxford University Press, 2013
3. Streetman, B.G. and Banerjee, S., 2001. Solid state electronic
devices. Prentice-Hall of India.
4. Jan M Rabaey, Digital Integrated Circuits - A Design Perspective,
Prentice Hall, 2nd Edition, 2005

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