East West University

Department of Computer Science and Engineering

Course code: CSE251; Course name: Electronic Circuits
Experiment no.: 1
Title: I-V Characteristics and Modeling of Forward Conduction of a Diode

Objectives:
1. To measure the I-V characteristics of forward conduction of a p-n junction diode.
2. To determine the models of forward conduction of a p-n junction diode.

Introduction:
Diode is one of the most basic non-linear electronic devices. An ideal diode acts like a switch
for electric current, acting as a short circuit for current flow in one direction (forward bias
connection) while behaving as an open circuit for current flow in the opposite direction
(reverse bias connection). The characteristics of practical diodes are however somewhat
different from those of ideal ones. The p-n junction diodes are one of the most popular types
of diodes used in the industry. The forward bias current-voltage (I-V) characteristic of a p-n
junction diode will be measured in this experiment.

Circuit Diagram:
(+) VD (-)

(+)

1K
VR

DC
Source
(-)

Figure 1. Circuit set up to measure forward bias I-V characteristics of a diode.

Equipments and Components Needed:

1. DC power supply
2. Digital multimeter
3. Diode (1 pc)
4. Resistor 1K
5. Breadboard
6. Connecting wires

Lab Procedure:
1. Measure the resistance value of Figure 1 with the multimeter and write it down in K in
Table 1.
2. Connect the circuit as shown in Figure 1. Use the DC power supply unit as DC source.
3. Change the DC source and measure the values of VD and VR and write them in Table 1.
Continue measurement until VD reaches to around 0.68 volts. Take around 25 to 30
readings by increasing the DC power supply with an increment of ≈ 0.5 V after VD
reaches to around 0.68 volts.
4. Divide VR by the measured value of resistance in K. This is diode current ID in mA.

Page 1 of 2
Table 1. Experimental Datasheet.
VD (V) VR (V) ID (mA) = VR/R(K) Measured Value of R (K)
1.

35.

5. Have the datasheet signed by your instructor.

Post-Lab Report Questions:

1. Using MATLAB, plot the I-V characteristics of the p-n junction diode in forward
conduction. Label the axes appropriately and have it printed.
2. Use pencil to identify the points on your graph that are corresponding to ID = 2 mA and ID
= 2.5 mA. Use these data points to calculate the diode parameters I S and n from the
equation I D  I S exp VD / nVT  . Use VT = 0.0259V.
3. Determine the cut-in voltage from the printed graph by drawing extrapolated line with
pencil.
4. If the diode resistance for the piecewise linear model is defined as
1/ rD  I D / VD  I D2  I D1 /VD2  VD1  , calculate the value of rD from the data points
corresponding to ID = 2 mA and ID = 2.5 mA.
5. Simulate the circuit of Figure 1 for a DC bias (VS) range of 0-5 volts using PSpice. Print
the ID vs. VS and VD vs. VS plots generated by PSpice and attach them with your report.
For simulation, use the DC SWEEP option of PSpice and the diode D1N4148. To modify
the diode parameters, select the diode (it will turn red) and go to EditModelEdit
Instance Model (Text). There, replace the values of IS, N, Vj by your values calculated in
steps 2 and 3 and click OK.

Page 2 of 2
 East West University
Department of Computer Science and Engineering
Course: CSE251 Electronic Circuits
Expt No.: 2
Title: Half-Wave Diode Rectifier Circuit

Objectives:
1. To study half-wave diode rectifier circuit.
2. To study the effect of a capacitor filter on the output of the rectifier circuit.

Introduction:
A rectifier circuit converts an AC voltage with zero average into a unidirectional voltage with
a non-zero average. The rectifier circuit can rectify both positive and negative half-cycles
(full-wave rectifier) or only the positive half-cycle (half-wave rectifier) of a sine wave. A
capacitor connected across the load resistor acts as a filter and reduces the ripple of the output
voltage. The time constant of the RC network should be much larger than the period of the
AC source voltage for effective filtering.

Circuit Diagram:

R(+) R(+)
Channel-1

Channel-2

10V (p-p) 1K
1KHz

B(-) B(-)

Figure 1. Set up for a half-wave diode rectifier circuit.

Equipments and Components Needed:

1. Signal Generator
2. Digital multimeter
3. Diode (1 pc)
4. Resistor 1K (1 pc)
5. Capacitor 10F (1 pc)
6. Breadboard
7. Connecting wires

Pre-Lab Report Question:

1. Consider the half-wave rectifier circuit shown in Figure 1. It is fed by a 1.0 KHz sinusoid
having a peak value of 5V. Design the circuit (determine the value of the parallel
capacitor) so that the output will have a peak-to-peak ripple of Vr  0.5V using the
Vp
formula Vr  . Calculate the diode conduction time t and conduction angle t
fCR
 V p  Vr 
using the formula t  cos 1   . Also calculate the average and peak values of
 V 
 p 

Page 1 of 2
 Vr
Vp   
the diode currents using the formulas i Davg  2 1   2V p  and
R  Vr 

Vr
Vp   
i D max  2 1  2 2V p .
R  Vr 


Lab Procedure:
1. Measure the resistance and write it down.
2. Setup the circuit shown in Figure 1.
3. Setup a 10 volts peak-to-peak, 1 KHz sine wave signal from the signal generator and
observe it in channel-1 of the oscilloscope.
4. Give input to the circuit and observe the output in channel-2 of the oscilloscope.
5. Observe both the input (in channel-1) and the output (in channel-2) signals by setting dual
mode in the oscilloscope.
6. Measure the difference in peak values (Vp) between the input and the output, and write
it down.
7. Connect the capacitor from your design in the pre-lab report in parallel with the resistance
and observe the output only.
8. Measure the time (t) during which the diode conducts (time between the lower peak to
the upper peak of the ripple voltage, that is, the time of charging the capacitor) and write
it down.
9. Measure the peak-to-peak ripple voltage (Vr) from oscilloscope and write it down.
10. Measure the average value of output voltage (VO) using the DC mode of the multimeter
and write it down.
11. Have the datasheet signed by your instructor.

Post-Lab Report Questions:

1. Compare the measured value of Vp with the built-in voltage of Expt 1.
2. Compare your measured t with your prelab value and make a comment.
2Vr
3. Calculate the peak-to-peak ripple voltage from the formula t  and compare it
Vp
with your measured data and prelab data and make a comment.
V
4. Calculate the average output voltage from VO  V p  r and compare it with the
2
measurement.
V
5. With I L  O , calculate the average and maximum diode currents using the formulas
R
 2V p   2V p 
i Davg  I L 1    and i 
D max  I L 1  2
 and measured value of Vr and
 V   V 
 r   r 

compare with your pre-lab values and make a comment.

6. Simulate the half-wave rectifier circuit in PSPICE for C = 10 F and submit the input and
output plots (on same graph). Use transient analysis of PSPICE for 4 cycles of input (4
ms). Modify the diode parameters following the same procedure and the same parameters
values used in Expt 1.

Page 2 of 2
 East West University
Department of Computer Science and Engineering
Course: CSE251 Electronic Circuits
Expt No: 03
Title: Study of Zener Diode.

Objectives:
1. To measure the I-V characteristics of Zener diode.
2. To determine the voltage regulation for variable resistance and variable supply voltage.

Introduction:
The diodes we have studied before do not operate in the breakdown region because this may
damage them. A Zener diode is different; it is a silicon diode that the manufacturer has
optimized for operation in the breakdown region. It is used to build voltage regulator circuits
that hold the load voltage almost constant despite large change in line voltage and load
resistance. Figure shows the symbol of the Zener diode.

Anode Cathode

Fig.1: Symbol of Zener diode

The Zener diode may have a breakdown voltage from about 2 to 200 V. These diodes can
operate in any of the three regions: forward, leakage and breakdown. Figure shows the 1-V
graph of Zener diode.

Current
Forward
Breakdown Current
Voltage

Reverse
Voltage Leakage Voltage
Current
Breakdown
Current

Fig. 2: I-V characteristic curve

 In the forward region it works as an ordinary diode.

 In the leakage region (between zero and breakdown) it has only a small reverse saturation
current.
 In the breakdown it has a sharp knee, followed by an almost vertical increase in
current
without changing the voltage.
 The voltage is almost constant, approximately equal to Vz over most of the breakdown
region.
Page 1 of 4
 Approximation:

“On” [V  Vz ] “Off” [Vz >V > 0]

Pre-Lab Report:
1. Draw the I-V characteristic of Fig. 3 (circuit with no load )and
2. calculate VL, VR, IZ for 10 V supply voltage.
3. Consider RL = 220 Ω and write down the condition for conduction.
4. Calculate RLmin, RLmax, ILmin for ILmax for Izmax= 7.2mA and 10 V supply voltage in Fig. 4.
5. Calculate Vi min, and Vi max for Izmax= 7.2mA of Fig. 5.

Equipments:
1. Zener diode (6.2 volt)
2. Resistance (220 Ω, 470 Ω, 1 kΩ)
3. POT 10 kΩ
4. DC Power supply
5. Bread board
6. Multimeter.
7. Ammeter.
Experimental Setup:
+ VR - + VR -

Vi = 10V 470 Ω 6.2 V 470 Ω

Vi = 10V 6.2 V 220 Ω
VL
Rv

Fig. 3: Circuit with No Load Fig. 4: Circuit with variable load

+ VR -

470 Ω 6.2 V
1KΩ VL
Vi

Fig. 5: Circuit with variable supply voltage.

Procedure:
1. Connect the circuit as shown in the Figure 3.
2. Vary the supply voltage from zero to 10 volts and complete Table 1.
3. Now, connect the circuit as shown in figure 4.
4. Keep the POT (variable resistance Rv) at its maximum value which you have
calculated from pre lab.

Page 2 of 4
5. Gradually decrease the POT resistance upto minimum Rv which you have calculated
from pre lab , next calculate IL by ohm’s law.
6. complete the Table 2.
7. Replace load with 1 kΩ resistance, vary the supply voltage Vi and complete table 3.
Vi (Volt) VR (Volt) Vz (Volt) Iz = VR/R (mA)
1
2
3
4
5
6
7
8
9
10

Table 1: Data for I-V characteristics

Vi (Volt) =10V VL(Volt) IL(Amp)

Table 2: Data for regulation due to load variation

Vi (Volt) VL(Volt)

1
2
3
4
5
6
7
8
9
10

Table 3: Data for regulation due to supply voltage variation

Page 3 of 4
Post Lab Report Questions:

1. Plot the I-V characteristics of the Zener diode. Determine the Zener breakdown voltage
from the plot.
2. Plot IL Vs VL for the data of table-2. Find the load regulation and compare it with the pre-
lab data.
3. Plot VL Vs V for the data of table 3. Find the line regulation compare it with the pre-lab
data.

Page 4 of 4
 East West University
Department of Computer Science and Engineering
Course: CSE251 Electronic Circuits
Expt No.: 4
Title: Adder and Amplifier Circuits Using 741 Op Amp

Objectives:
1. To familiarize with the 741 Op Amp Integrated Circuit (IC).
2. To design and construct an adder using 741 Op Amp.
3. To design and construct an amplifier using 741 Op Amp.

Introduction:
Operational Amplifier (Op Amp) is a differential amplifier and can perform mathematical
operations such as addition, subtraction, etc. This is an integrated circuit (IC).

The block diagram of the 741 Op Amp is shown in Figure 1. It has 8 pins. To identify the
pins of the 741 Op Amp in the laboratory, place the Op-Amp on the trainer board in such a
way that the notch is in your left side. Then the pin number should be identified as shown in
Figure 1.
8
7

5
6
4
2
3
1

Figure 1. Block diagram of the 741 Op-Amp

The names of different pins are as follows:

1: Offset null (usually not used)
2: Inverting input terminal
3: Non-inverting input terminal
4: Negative DC power supply (usually 5-15V negative)
5: Offset null (usually not used)
6: Output terminal
7: Positive DC power supply (usually 5-15V positive)
8: Not connected (NC)

The Op Amp acts as an adder when the non-inverting input terminal is grounded and two or
more signals are fed to the inverting input via resistors of appropriate values. The output
becomes negative of the sum of the input signals.

A non inverting amplifier produces the amplified output equal to the input multiplied by the
closed loop gain, which is determined by the appropriate resistances.

Page 1 of 3
Circuit Diagram:
Rf

R2
2
7
6 VO
3 4

R1
V2 V1

Figure 2. An adder circuit using 741 Op Amp.

R2

R1

C VO
VI D
A B
RA
RB
ZI

Figure 3. A non inverting amplifier circuit using 741 Op Amp.

Equipments and Components Needed:

1. Digital trainer board
2. DC power supply
3. Signal generator
4. Oscilloscope
5. Digital multimeter
6. 741 Op Amp (1 pc)
7. Resistor (as required from pre-lab design)
8. Breadboard
9. Connecting wires

Pre-Lab Report Question:

1. DESIGN OF ADDER CIRCUIT: Design the adder circuit shown in Figure 2 (determine
the values of the resistors) so that it implements the function VO  V1  2V2  . The
available set of resistances that you can use is 100, 1K, 2.2K, 3.3K, 5.6K, and
10K. For design safety, take Rf as high as possible. In your design, if exact value of
resistance is not available, choose the nearest one.
2. DESIGN OF AMPLIFIER CIRCUIT: Design the non inverting amplifier circuit as shown
in Figure 3 (determine the values of the resistors) so that the closed loop gain is
VO R2
  5 . The available set of resistance that you can use is 100, 1K, 2.2K,
VI R1
3.3K, 5.6K, and 10K. For design safety, take R2 as high as possible. For proper
operation of the amplifier circuit, assume that R A = R1 and RB = R2. In your design, if
exact value of resistance is not available, choose the nearest one. With your design, set VI

Page 2 of 3
 = 1V and calculate the voltages at nodes A, B, C, and D. Also, calculate the currents
V
through the resistances R1, R2, RA, and RB and the input impedance Z I  I .
II
Lab Procedure:
ADDER CIRCUIT:
1. Collect the resistances of your design from the lab assistant and measure them and write
them down.
2. Connect the circuit as shown in Figure 2 with the resistance values from your prelab
design. Use a +15V DC power supply to terminal 7 and -15V DC power supply to
terminal 4 of the Op Amp from the digital trainer board.
3. Use 5V from digital trainer board as V1 and 2V from DC power supply as V2. Measure
the output using multimeter and write it down.
4. Replace the V1 by a 5V peak to peak 1 KHZ sine wave from the signal generator and
observe the output in channel-2 in DC mode. Invert channel-2 and write the amplitude.

AMPLIFIER CIRCUIT:
5. Collect the resistances of your design from the lab assistant and measure them and write
them down.
6. Set up the circuit as shown in Figure 3 using the resistances from your prelab design. Use
a +15V DC power supply to terminal 7 and -15V DC power supply to terminal 4 of the
Op Amp from the digital trainer board.
7. Set VI = 1V from the DC power supply.
8. Measure the voltages at nodes A, B, C, and D using multimeter and write them down.
9. Measure the voltages across resistances R1, R2, RA, and RB and write them down.

10. Have the datasheet signed by your instructor.

Post-Lab Report Questions:

ADDER CIRCUIT:
1. From the measurement in step 3, verify your design.
2. Does the amplitude measured in step 4 verify your design? Explain.
3. Simulate the circuit shown in Figure 2 in Pspice. Use V1 a 5V peak to peak, 1KHZ, 00
phase sine wave and V2 a 5V peak to peak, 1KHZ, 900 phase sine wave. Perform
simulation for 4 cycles (transient analysis for 4 ms) and attach the printed output with
your report.
4. Write the expressions of V1 and V2 of Question 3 in phasor domain, add them, and write
the result in time domain as a sine function. Compare it with the Pspice output in terms of
amplitude, phase angle, and time period.

AMPLIFIER CIRCUIT:
5. Compare the measured voltages at nodes A, B, C, and D in step 8 with your prelab
results.
6. From your measured voltages at nodes B and C in step 8, comment on the virtual ground
of Op Amp.
7. From your measured voltages at nodes A and D in step 8, calculate the gain and verify
with prelab result.
8. From the measured voltages across the resistances in step 9, calculate the currents through
them and compare them with your prelab results.
9. From your measured voltages at node A in step 8 and across RA in step 9, calculate ZI and
compare it with your prelab result

Page 3 of 3
 East West University
Department of Computer Science and Engineering
Course: CSE251 Electronic Circuits
Expt No.: 5
Title: Signal Integration and Differentiation Using 741 Op-Amp

Objectives:
1. To study the responses of Op-Amp integrator to sinusoid and square waveforms.
2. To study the responses of Op-Amp differentiator to sinusoid and triangular waveforms.

Introduction:
Operational Amplifier (Op-Amp) is a differential amplifier and can perform mathematical
operations such as addition, subtraction, integration, differentiation, etc. In Expt. No. 3, we
use the Op-Amp together with the only resistors to study adder and amplifier circuits. In this
experiment, we will study integrator and differentiator circuits by using a capacitor either in
the feedback path or in the input path.

Circuit Diagram:
0.1F

1K
Channel-1

2
7
6 Channel-2
4
Vin 3

Figure 1. An Op-Amp integrator circuit.

1K

0.1F
Channel-1

2
7
6 Channel-2
4
Vin 3

Figure 2. An Op-Amp differentiator circuit.

Page 1 of 3
Equipments and Components Needed:
1. Digital trainer board
2. Signal generator
3. Oscilloscope
4. Digital multimeter
5. 741 Op Amp (1 pc)
6. Resistor (1K 1 pc)
7. Capacitor (0.1µF, 1 pc)
8. Breadboard
9. Connecting wires

Pre-Lab Report Question:

1. INTEGRATOR: Consider the integrator shown in Figure 1 with vin  V p sin t  . If the
circuit is initially relaxed, find the expression of output and determine the frequency, f, at
which the output amplitude is equal to 2V p . Also, determine the phase relation between
input and output.
2. DIFFERENTIATOR: Consider the differentiator shown in Figure 2 with vin  V p sin t  .
If the circuit is initially relaxed, find the expression of output and determine the
frequency, f, at which the output amplitude is equal to V p / 2 . Also, determine the phase
relation between input and output.

Lab Procedure:
INTEGRATOR:
1. Measure the resistance and write it down. Connect the circuit as shown in Figure 1. Use a
+5V DC power supply to terminal 7 and -5V DC power supply to terminal 4 of the Op-
Amp. Use fixed 5V and -5V DC supply of digital trainer board or 0 to15V and 0 to -15V
DC variable power supply from the digital trainer board.
2. Use a 2V peak to peak sine wave Vin from the signal generator. Set the sine wave
frequency to the one that you have determined in your prelab design.
3. Observe the output in channel-2 and input in channel-1 using dual mode. Write the
amplitudes of the input and output signals and the phase difference between them.
4. Change the input from sine wave to square wave (do not change the frequency and
magnitude) and observe the output in dual mode. Draw both the input and output wave
forms with voltage and time axes labels.

DIFFERENTIATOR:
5. Connect the circuit as shown in Figure 2. Use a +5V DC power supply to terminal 7 and
-5V DC power supply to terminal 4 of the Op-Amp.
6. Use a 2V peak to peak sine wave Vin from the signal generator with frequency from you
prelab.
7. Observe the output in channel-2 and input in channel-1 using dual mode. Write the
amplitudes of the input and output signals and the phase difference between them.
5. Change the input from sine wave to triangular wave (do not change the frequency and
magnitude) and observe the output in dual mode. Draw them with voltage and time axes
labels.

6. Have the datasheet signed by your instructor.

Page 2 of 3
Post-Lab Report Questions:
INTEGRATOR:
1. In the output expression from your prelab, put the measured value of R and the given
values of C and Vp; calculate the amplitude of the output signal and compared it with the
measured data.
2. Compare the phase relation between your prelab result and measured data.
3. Simulate the integrator of Figure 1 for 4 cycles using PSpice with the measured value of
R and the square wave input that you have used in the lab and have the simulation result
printed. Compare the simulation result with your measurement.

DIFFERENTIATOR:
4. In the output expression from your prelab, put the measured value of R and the given
values of C and Vp; calculate the amplitude of output signal and compared it with your
measured data.
5. Compare the phase relation between your prelab result and measured data.
6. Simulate the differentiator of Figure 2 for 4 cycles using PSpice with the measured value
of R and the triangular wave input that you have used in the lab and have the simulation
result printed. Compare the simulation result with your measurement.

Page 3 of 3
 East West University
Department of Computer Science and Engineering
Course: CSE251 Electronic Circuits
Expt No.: 6
Title: Measurement of Parameters and I-V characteristics of an N-channel MOSFET

Objectives:
1. To measure the threshold voltage Vt and the process transconductance Kn of an N-channel
enhancement type MOSFET.
2. To measure the I-V characteristics (ID vs. VDS) of an N-channel enhancement type
MOSFET.

Circuit Diagram:

Figure 1. Pin diagram of CD4007C IC.

VM

8 D VDD
6
G 7 S

Figure 2. Circuit for measurement of Vt and Kn of an NMOSFET.

Page 1 of 3
 RD

8
D

6 G VDS

S VDD
VGS 7
VGG

Figure 3. Circuit for measurement of I-V characteristics of an NMOSFET.

Equipments and Components Needed:

1. Digital trainer board
2. DC power supply
3. Digital multimeter
4. DC Voltmeter
5. CD4007C IC (1 pc)
6. Resistor (1K 1 pc)
7. Breadboard
8. Connecting wires

Lab Procedure:
MEASUREMENT OF Vt AND Kn:
1. Measure the resistance and connect the circuit as shown in Figure 2. Note that a voltmeter
(VM) is in series with the drain and VDD; and G and D are shorted. Use the pin numbers
as shown in Figure 2.
2. Set VDD to 10V from the DC power supply unit and measure the reading of the voltmeter.
The threshold voltage Vt = VDD – VM reading.
3. Now replace the voltmeter by 1K resistance and measure the voltage drop across the
resistance. Divide it by the resistance to get ID. Measure VGS and calculate the process
transconductance from Kn = 2ID/(VGS-Vt)2.

MEASUREMENT OF I-V CHARACTERISTICS:

4. Connect the circuit as shown in Figure 3 and set VGG = Vt+1V from the trainer board
variable power supply.
5. Use the DC power supply unit as VDD. Now change VDD from 0 and measure VDS and
VRD (voltage across RD resistance). Calculate ID from ID=VRD/RD. Take around 15 data up
to VDS = 7V. Be careful so that VDD does not exceed 15V.
6. Set VGG to Vt+2V and Vt+3V and repeat step 5.

7. Have the datasheet signed by your instructor.

Page 2 of 3
Post-Lab Report Questions:
1. You have Vt and Kn. Note that here Kn is equivalent to K’n(W/L) of the text. For three
VGG (VGG = VGS) values of Figure 3, use the linear (triode) and saturation current
expressions to tabulate the ID for each VDS and plot the ID-VDS curves using your
calculated and experimental data on the same graph. Use MATLAB for plotting.
 
I D  K n VGS  Vt VDS  VDS
2
/ 2 ; linear
 
I D  K n / 2VGS  Vt  ; saturation
2

2. Write your observation and comments on the calculated and experimental graphs,
especially in the saturation regions.
3. For VGG = Vt+3V, take two experimental data points in saturation and calculate the slope.
From the slope, obtain output resistance ro.
4. Simulate the circuit shown in Figure 3 using PSPICE. For simulation use MbreakN3
MOSFET and DC sweep analysis with nested loop for the three different values of V GG.
To set the parameters, double click on MbreakN3 and set W and L to 1E-6 (1um). Now
select MbreakN3 (it will turn red) and go to EditModelEdit Instance Model (Text).
Delete everything in the appeared window and write the followings (put your values of Vt
and Kn) and click OK.

.MODEL MbreakN3 NMOS

LEVEL = 3
VTO = 1.8
KP = 100E-6

Page 3 of 3
 East West University
Department of Computer Science and Engineering
Course: CSE251 Electronic Circuits
Expt No.: 7
Title: Biasing of a Common-Source Voltage Amplifier

Objectives:
1. Identify an appropriate DC operation point for a NMOS transistor.

Theory: The common-source amplifier with a NMOS transistor is shown here.

1. The biasing is done by fixing the gate voltage with a voltage divider and also by using a
source resistor RS. The source resistor gives negative feedback and stabilizes the bias
current as a function of temperature variations and transistor characteristics. This is a
popular biasing scheme for discrete transistor circuits.
2. Select source resistor such that voltage Vs at source terminal is about 1/3rd to 1/5th of VDD.
The resistance RD is chosen such that drain voltage VD is about in the middle of VDD and
VS. This is done so that the signal at the drain has a relatively large and symmetrical
output swing.

3. We choose the resistors such that the parallel resistor is relatively large to ensure a large
input resistance of the amplifier and prevent loading of the signal source R =R ||R .
in G1 G2
4. An important characteristics of a transistor is its transconductance gm . It is a measure of
the rate of change of output current with respect to input voltage vgs. The gm can be
written as follows,

Circuit Diagram:

Figure 1. Pin diagram of CD4007C IC.

Page 1 of 2
Equipments and Components Needed:
1. Digital trainer board
2. DC power supply
3. Digital multimeter
4. DC Voltmeter
5. CD4007C IC (1 pc)
6. Resistor (1K 1 pc)
7. Breadboard
8. Connecting wires

Lab Procedure:
Pre-Lab:

a. Read: Section 4.5.2 (example 4.9) Sedra-Smith, 5th ed.

b. You have to bias the transistor with a bias current ID = 0.6mA. Let the source voltage VS
be 4V.
c. Choose drain voltage VD such that it is in the middle of VSn and VDD.
d. The input resistance RG should be larger than 15 kOhm.
e. The NMOS transistor (CD4007CN array) characteristics are: Vt= 1.2V ,
kn’W/L=0.7mA/V2,
a. Following example 4.9 procedure and information above determine the value of VD, RS,
and RD, RG1 and RG2
b. What is the total DC power dissipation in the amplifier? (hint: power dissipation is
VDDItotal).

PROCEDURE:
In this part you will bias the transistor (Figure to the
right) using pre-lab data.

a. Build the circuit to the right. Use the transistor

between the pins 3, 4 and 5. Connect the pin 7
source (pin 5) of the NMOS transistor; drain-to-
source short is done to eliminate the back-gate
(body) effect on the threshold voltage. (If this
transistor does not work try any of the other two
NMOSes). For the biasing resistor RG2, use a 100
kOhm pot. For RG1, RD and RS use the values
from pre-lab.
b. Set the pot RG2 such that the drain voltage VD (pin
4 of MOSFET) is between 9 and 10 V. Note the drain voltage VD=___V. Now measure
the gate and source voltages. VG=___V. VS=___V. Calculate the drain current ID = ___A?

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 East West University
Department of Computer Science and Engineering
Course: CSE251 Electronic Circuits
Expt No.: 8
Title: Introduction to Transistor

Objectives:

1. Identify base, emitter and collector terminals and connections of NPN and PNP transistors.
2. Demonstrate and measure the effects on base current of forward and reverse bias in the emitter-
base circuit.

Theory:

It is convenient to represent the current voltage characteristics of transistor graphically. In a

BJT common-emitter (CE) configuration, the emitter serves as the common terminal between
input and output. The input is applied at the base terminal and the output is taken from the
collector terminal. The typical CE output describes iC as a function of VCE with iB as a
parameter. In the active mode, iC of practical BJTs shows some dependence on VCE due to
early effect. As a result, iC characteristics are not horizontal straight lines. This dependency of
ic on VCE is included in the equivalent circuit via an output resistance rO.

Equipments and Components Needed:

1. Power supply
2. Multimeter
3. Resistor (100KΩ and 1.8KΩ)
4. Transistor (NPN and PNP)
5. Voltmeter
6. DC milli-ammeter and DC micro-ammeter

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PROCEDURE:

1. Measure β (h FE) of the transistor with the ammeter and record the value.
2. Construct the circuit as shown in the figure 1. Use DC power supply for V BB and 0-15 V variable
DC voltage from trainer board for VCC. Connect the micro-ammeter in the base circuit and milli-
ammeter in the collector circuit. Make sure to connect the ammeters with the correct polarity.
3. Adjust VBB so that IB ia about 5uA. Vary VCE in steps of 1 V form 10 V to 1 V by changing VCC.
Keep IB constant during this measurement. VCE may be measured with digital multimeter. Next
vary VCE in steps of 0.1 V from 1 V to 0V. Measure IC and VCE in each step.

IC VCC
1.8 KΩ

100 KΩ

VBB IB IE

Figure 1 Circuit diagram for measuring I-V characteristics of Transistor

Post-Lab Report Questions:

Plot IC-VCE characteristics curves from the measured data using PSPICE and MATLAB

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