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Field Effect Transformers

The document discusses different types of field effect transistors including JFETs and MOSFETs. It covers the construction, operation, characteristics and applications of n-channel and p-channel JFETs as well as depletion and enhancement type MOSFETs.

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Dhanushka Madushan
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23 views26 pages

Field Effect Transformers

The document discusses different types of field effect transistors including JFETs and MOSFETs. It covers the construction, operation, characteristics and applications of n-channel and p-channel JFETs as well as depletion and enhancement type MOSFETs.

Uploaded by

Dhanushka Madushan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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EE 2107 Electronic Circuits and Systems IIA

Field effect Transistors

CONDUCTED BY
Eng. Dhanushka Vijesiri
AMIE(SL), MECSL,MIEEE
BSc. Eng.(Hons) University of Ruhuna
FET
Field Effect Transistors

JFET IGFET

n-channel p-channel MOSFET MESFET

Depletion Enhancement

n-channel P-channel n-channel p-channel


BJT Vs FET
BJT FET
Consist of two semiconductor junctions (PN junctions) and Unipolar devices and are typically made of materials like
are typically made of either silicon (NPN or PNP types). They silicon (MOSFET) or gallium arsenide (GaAs FET). They have
have three layers: emitter, base, and collector. three terminals: source, gate, and drain.

Bipolar devices, meaning they use both electron and hole Unipolar devices, which means they rely on either electrons (N-
charge carriers (NPN and PNP types). channel) or holes (P-channel) as charge carriers.
Current-controlled devices, which means their output current Voltage-controlled devices, meaning their output current is
is controlled by the input current flowing into the base controlled by the voltage applied to the gate terminal.
terminal.
Typically have lower input impedance compared to FETs, High input impedance, making them suitable for applications
which means they draw more current from the input source. where a high-impedance input source is desired.
Generally, have lower output impedance compared to FETs, Typically have higher output impedance, making them better
which means they have a better current-driving capability. suited for voltage-buffering applications.

Typically used for applications where voltage amplification is Often used in applications where current amplification and
required, such as audio amplifiers. switching are needed, such as in digital logic circuits.
Known for their lower noise performance, making them Excellent noise performance, especially in high-impedance
suitable for low-noise applications like audio amplification. applications.
Common applications include amplifiers (both audio and RF), Common applications include voltage amplifiers, digital logic
switching circuits, and analog signal processing. gates, high-frequency circuits, and high-impedance sensors.
Junction-FET Construction
Junction-FET Operation
Characteristic of JFET
VGS = 0V
Characteristic of JFET
VGS < 0V
Voltage-Controlled Resistor
The region to the left of the pinch-off locus of Fig.
6.11 is referred to as the ohmic or voltage-
controlled resistance region. In this region the JFET
can actually be employed as a variable resistor
(possibly for an automatic gain control system)
whose resistance is controlled by the applied gate-
to-source voltage.
P-Channel JFET
Symbol of JFET
Transfer Characteristic of JFET
Transfer Characteristic of JFET
Shockley’s Equation
Operating Region of JFET
Relationship equation in BJT and JFET
MOSFETS
Depletion type
MOSFETS
Depletion type
MOSFETS
Depletion type
MOSFETS
Depletion type (P-channel)
MOSFETS
Depletion type Symbols
MOSFETS
Enhancement type
MOSFETS
Enhancement type
MOSFETS
Enhancement type
MOSFETS
Enhancement type
MOSFETS
Enhancement type (P-channel)
MOSFETS
Enhancement type Symbols

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